High-pressure plastic package type surface-mounted PTC (Positive Temperature Coefficient) thermosensitive resistor

Abstract

The utility model relates to the technical field of PTC (Positive Temperature Coefficient) patches, in particular to a high-voltage plastic package type patch PTC thermistor, which comprises a PTC semiconductor block, an insulating part, a first copper foil electrode and a second copper foil electrode. According to the utility model, the first copper foil electrode and the second copper foil electrode are fixedly embedded in the PTC semiconductor block in a manner of slotting on the PTC semiconductor block, so that the PTC semiconductor block, the embedded insulating part, the first copper foil electrode and the second copper foil electrode are integrally thinner, and the high-pressure plastic package surface-mounted PTC thermistor formed by a high-pressure plastic package process is smaller in volume and more compact in structure. And the method is suitable for the design of a small PCB circuit board.

Description

Technical Field

[0001] The utility model relates to the technical field of PTC patches, in particular to a high-voltage plastic-sealed patch-type PTC thermistor. Background Art

[0002] PTC performance refers to the performance of structures whose resistivity increases significantly with increasing temperature within a relatively small temperature range. It acts as an overload and overheating protection component in electrical equipment, thereby greatly improving the safety of electrical components.

[0003] A PTC thermistor, a semiconductor material made from a mixture of platinum, titanium, and carbon, is used in computer power supplies to prevent overheating of the power module. Existing plastic-encapsulated chip PTC thermistors are large and occupy a large area on the circuit board. With the trend towards smaller designs for various electrical appliances, high-voltage plastic-encapsulated chip PTC thermistors are being forced to seek smaller designs. Utility Model Content

[0004] The purpose of the utility model is to solve the shortcomings of the prior art and to propose a high-voltage plastic-sealed chip-type PTC thermistor.

[0005] In order to achieve the above purpose, the present invention adopts the following technical solutions:

[0006] A high-voltage plastic-encapsulated chip-type PTC thermistor includes a PTC semiconductor block. The PTC semiconductor block has a flat surface with a longitudinal groove, a first transverse groove, and a second transverse groove on both sides of the longitudinal groove.

[0007] The insulating member is fixedly embedded in the interior of the longitudinal groove;

[0008] The first copper foil electrode is fixedly embedded in the first transverse groove;

[0009] A second copper foil electrode is fixedly embedded in the second transverse groove;

[0010] The outer sides of the PTC semiconductor block, the embedded insulating member, the first copper foil electrode, and the second copper foil electrode are covered with a plastic outer layer;

[0011] One end of the first copper foil electrode extends out of the plastic outer layer to form a first contact pin, and one end of the second copper foil electrode extends out of the plastic outer layer to form a second contact pin.

[0012] As a further description of the above technical solution:

[0013] The depth of the longitudinal groove is greater than the depth of the first transverse groove, and the depth of the second transverse groove is the same as the depth of the first transverse groove.

[0014] As a further description of the above technical solution:

[0015] The first transverse groove and the second transverse groove are on the same straight line.

[0016] As a further description of the above technical solution:

[0017] The height of the embedded insulating member is greater than the depth of the longitudinal groove.

[0018] As a further description of the above technical solution:

[0019] The embedded insulation is solder-resistant paint.

[0020] As a further description of the above technical solution:

[0021] The PTC semiconductor block is a conductive material made of a polymer with PTC characteristics.

[0022] As a further description of the above technical solution:

[0023] The surfaces of the first contact pin and the second contact pin are provided with a copper plating layer.

[0024] As a further description of the above technical solution:

[0025] The PTC semiconductor block is in the shape of a rectangular block.

[0026] The utility model has the following beneficial effects:

[0027] Compared with the existing technology, this high-voltage plastic-sealed chip PTC thermistor adopts the method of slotting on the PTC semiconductor block to fix and embed the first copper foil electrode and the second copper foil electrode, so that the PTC semiconductor block, the embedded insulating part, the first copper foil electrode, and the second copper foil electrode are thinner as a whole. The high-voltage plastic-sealed chip PTC thermistor formed after the high-voltage plastic-sealing process is small in size and suitable for the design of compact PCB circuit boards. BRIEF DESCRIPTION OF THE DRAWINGS

[0028] Figure 1 This is a three-dimensional schematic diagram of a high-voltage plastic-encapsulated chip PTC thermistor proposed by the utility model;

[0029] Figure 2 The utility model provides a three-dimensional schematic diagram of a core group of a high-voltage plastic-encapsulated chip PTC thermistor.

[0030] Legend:

[0031] 1. PTC semiconductor block; 2. Longitudinal groove; 3. Insulator; 4a. First transverse groove; 4b. Second transverse groove; 5. First copper foil electrode; 5a. First contact pin; 6. Second copper foil electrode; 6a. Second contact pin; 7. Plastic outer layer. DETAILED DESCRIPTION

[0032] Reference Figure 1-Figure 2 The utility model provides a high-voltage plastic-encapsulated chip PTC thermistor, comprising: a PTC semiconductor block 1, an insulating member 3, a first copper foil electrode 5 and a second copper foil electrode 6.

[0033] The PTC semiconductor block 1 has a flat surface. For example, the PTC semiconductor block 1 is a rectangular block with flat sides. A longitudinal groove 2 and a first transverse groove 4a and a second transverse groove 4b are formed on a flat surface of the PTC semiconductor block 1.

[0034] The longitudinal groove 2 separates the first transverse groove 4a and the second transverse groove 4b. The insulating part 3 is fixedly embedded in the interior of the longitudinal groove 2. The first copper foil electrode 5 is fixedly embedded in the interior of the first transverse groove 4a. The second copper foil electrode 6 is fixedly embedded in the interior of the second transverse groove 4b. The insulating part 3 inside the longitudinal groove 2 isolates the first copper foil electrode 5 and the second copper foil electrode 6. The first copper foil electrode 5 and the second copper foil electrode 6 correspond to the two poles of the high-voltage plastic-encapsulated chip PTC thermistor.

[0035] The outer sides of the PTC semiconductor block 1, the embedded insulating part 3, the first copper foil electrode 5, and the second copper foil electrode 6 are covered with a plastic outer layer 7. The plastic outer layer 7 is an insulating material and provides good protection for the PTC semiconductor block 1, the embedded insulating part 3, the first copper foil electrode 5, and the second copper foil electrode 6. One end of the first copper foil electrode 5 extends out of the plastic outer layer 7 to form a first contact pin 5a, and one end of the second copper foil electrode 6 extends out of the plastic outer layer 7 to form a second contact pin 6a.

[0036] The portions of the first contact pin 5a and the second contact pin 6a that are not covered by the plastic outer layer 7 serve as soldering pins and can be soldered in a PCB circuit board.

[0037] A high-voltage plastic-encapsulated chip PTC thermistor is designed. Slots are cut in the PTC semiconductor block to securely embed the first and second copper foil electrodes. This results in a thinner overall structure for the PTC semiconductor block, embedded insulating component, first and second copper foil electrodes. The high-voltage plastic-encapsulated chip PTC thermistor, formed after the high-voltage plastic-encapsulation process, is compact and suitable for compact PCB designs.

[0038] In one embodiment, the depth of the longitudinal groove 2 is greater than the depth of the first transverse groove 4a, and the depth of the second transverse groove 4b is the same as the depth of the first transverse groove 4a, so that the bottom of the insulating member 3 passes over the bottom of the first copper foil electrode 5 and the second copper foil electrode 6, ensuring the insulation between the first copper foil electrode 5 and the second copper foil electrode 6.

[0039] The height of the embedded insulating part 3 is greater than the depth of the longitudinal groove 2. During plastic sealing, the side where the embedded insulating part 3 is located faces the bottom, which has its own insulation properties. The thickness of the plastic sealing outer layer 7 at this location can be thinner without affecting the insulation properties of the high-voltage plastic sealed chip PTC thermistor.

[0040] The embedded insulating member 3 is solder resist paint, the PTC semiconductor block 1 is a conductive material composed of a polymer having PTC characteristics, and the surfaces of the first contact pin 5a and the second contact pin 6a are provided with a copper plating layer.

[0041] A production process for high-voltage plastic-encapsulated chip PTC thermistors. Horizontal grooves are mechanically cut on a block of PTC semiconductor material. Copper foil electrodes are then laser-welded into the horizontal grooves. Longitudinal grooves are then mechanically cut again. The horizontal grooves are now divided into first and second horizontal grooves 4a and 4b, and the copper foil electrodes are divided into first and second copper foil electrodes 5 and 6. Finally, solder mask paint is filled into the longitudinal grooves 2, solidified to form embedded insulating members 3, before being sent to the electroplating and plastic-encapsulation processes.

[0042] Finally, it should be noted that the above are only preferred embodiments of the present invention and are not intended to limit the present invention. Although the present invention has been described in detail with reference to the aforementioned embodiments, those skilled in the art can still modify the technical solutions described in the aforementioned embodiments or make equivalent replacements for some of the technical features therein. Any modifications, equivalent replacements, improvements, etc. made within the spirit and principles of the present invention should be included in the scope of protection of the present invention.

Claims

1. A high-voltage plastic-encapsulated chip-type PTC thermistor, comprising a PTC semiconductor block (1), characterized in that: The surface of the PTC semiconductor block (1) has a plane, and a longitudinal groove (2), a first transverse groove (4a) and a second transverse groove (4b) located on both sides of the longitudinal groove (2) are provided on the plane; The insulating member (3) is fixedly embedded in the interior of the longitudinal groove (2); A first copper foil electrode (5) is fixedly embedded in the interior of the first transverse groove (4a); A second copper foil electrode (6) is fixedly embedded in the interior of the second transverse groove (4b); The outer sides of the PTC semiconductor block (1), the embedded insulating member (3), the first copper foil electrode (5), and the second copper foil electrode (6) are covered with a plastic outer layer (7); One end of the first copper foil electrode (5) extends out of the plastic outer layer (7) to form a first contact pin (5a), and one end of the second copper foil electrode (6) extends out of the plastic outer layer (7) to form a second contact pin (6a).

2. A high-voltage plastic-encapsulated chip PTC thermistor according to claim 1, characterized in that: The depth of the longitudinal groove (2) is greater than the depth of the first transverse groove (4a), and the depth of the second transverse groove (4b) is the same as the depth of the first transverse groove (4a).

3. A high voltage plastic sealed chip PTC thermistor according to claim 1, characterized in that: The first transverse groove (4a) and the second transverse groove (4b) are on the same straight line.

4. A high voltage plastic sealed chip PTC thermistor according to claim 1, characterized in that: The height of the embedded insulating member (3) is greater than the depth of the longitudinal groove (2).

5. A high voltage plastic sealed chip PTC thermistor according to claim 1, characterized in that: The embedded insulating member (3) is a solder resist paint.

6. A high voltage plastic sealed chip PTC thermistor according to claim 1, characterized in that: The PTC semiconductor block (1) is a conductive material composed of a polymer having PTC characteristics.

7. A high voltage plastic sealed chip PTC thermistor according to claim 1, characterized in that: The surfaces of the first contact pin (5a) and the second contact pin (6a) are provided with a copper plating layer.

8. A high voltage plastic sealed chip PTC thermistor according to claim 1, characterized in that: The PTC semiconductor block (1) is in the shape of a rectangular block.

Images