Fuse with adjustable thick film patch
By introducing an alloy structure into the thick film patch resistor, adjusting the size and position of the alloy layer, the problem of fixing the alloy layer size is solved, and the adjustability of the fuse melting point and optimization of the production process are achieved, cost is reduced, and mechanical properties and thermal conductivity are improved.
Patent Information
- Application Number
- CN202421667234.7
- Authority / Receiving Office
- CN · China
- Patent Type
- Utility models(China)
- Current Assignee / Owner
- Filing Date
- 2024-07-15
- Publication Date
- 2025-08-05
- Estimated Expiration
- 2034-07-15
AI Technical Summary
The existing thick film chip resistor alloy layer has a fixed size, so it is impossible to print different alloy sizes according to product requirements, which cannot meet the needs of high-end industrial circuit design, and is costly.
The alloy structure is adopted, including a ceramic substrate, melt portion, electrode block, alloy layer and melting point. By adjusting the size of the alloy layer, the fuse melting point is changed, the production process is optimized, and the contact area with the melt is increased.
The adjustability of the alloy layer is realized, suitable for the production of more patch resistors, reduce costs, improve the efficiency of the production process and product applicability, and enhance the mechanical properties and thermal conductivity of the ceramic substrate.
Smart Images

Figure CN223193743U_ABST
Abstract
Description
Technical Field
[0001] The utility model relates to the technical field of resistors, in particular to an adjustable thick film patch fuse. Background Art
[0002] With the advancement of science and technology, the development of the times and people's requirements for various electronic products are constantly increasing, and diversified demands are emerging, which also brings new development opportunities for thick-film chip resistors. In particular, customer applications have higher requirements for the resistance value, temperature coefficient, and power indicators of thick-film chip resistors.
[0003] Thick film resistors mainly refer to resistors printed using a thick film process. This type of resistor can be rectangular, strip-shaped, curved, or in other shapes. It is commonly used in the manufacture of precision resistors and power resistors. Existing thick film chip resistors use a ceramic substrate as a carrier. They form a circuit by screen-printing silver paste with a specific pattern, and print resistor ink on the surface of the ceramic substrate as the resistor body, with the two ends connected to the silver paste circuit. The thick film resistors produced by this method are expensive and have a high characteristic temperature coefficient of resistance. In addition, the size of the alloy layer of the existing thick film resistor is fixed, and it is impossible to print different alloy sizes according to product requirements. The existing structure for reducing the melting point of the fuse uses the melting point to change the melting point of the fuse, which cannot meet the needs of current high-end industrial circuit design.
[0004] Therefore, it is necessary to provide a fuse with an adjustable thick film patch to solve the above technical problems. Utility Model Content
[0005] The purpose of this section is to summarize some aspects of the embodiments of the present invention and briefly introduce some preferred embodiments. Some simplifications or omissions may be made in this section and in the abstract and title of the utility model to avoid obscuring the purpose of this section, the abstract and the title of the utility model, and such simplifications or omissions shall not be used to limit the scope of the present invention.
[0006] To solve the above technical problems, the present invention provides the following technical solutions: an adjustable thick-film patch fuse, comprising an alloy structure, characterized in that the alloy structure comprises a ceramic substrate, a melt portion, an electrode block, an alloy layer, and a melting point; two electrode blocks are mounted on the upper surface of the ceramic substrate, the electrode blocks are connected to the melt portion, the alloy layer is connected to the melt portion, and side electrodes are provided on the side walls of the ceramic substrate, the side electrodes are connected to the melt portion and the electrode blocks.
[0007] As a preferred embodiment of the adjustable thick film patch fuse of the present invention, the electrode blocks are respectively mounted on both ends of the left and right upper surfaces of the ceramic substrate.
[0008] As a preferred embodiment of the adjustable thick film patch fuse of the present invention, the alloy layer is arranged between two electrode blocks, and the thickness of the alloy layer is lower than the thickness of the electrode blocks.
[0009] As a preferred embodiment of the adjustable thick film patch fuse of the present invention, the width of the alloy layer is greater than the width of the melt portion.
[0010] As a preferred embodiment of the adjustable thick film patch fuse of the present invention, the fuse part is rectangular in shape and is mounted on two electrode blocks and electrically connected to the electrode blocks.
[0011] As a preferred embodiment of the adjustable thick film patch fuse of the present invention, the side electrode is a concave structure with two openings facing each other.
[0012] As a preferred embodiment of the adjustable thick film patch fuse of the present invention, the inner surface of the opening of the side electrode covers the surface of the melt part and the electrode block, and side electrodes are provided at both ends of the ceramic substrate.
[0013] As a preferred embodiment of the adjustable thick film patch fuse of the present invention, the width of the alloy layer is greater than the width of the melt portion.
[0014] As a preferred embodiment of the adjustable thick film patch fuse of the present invention, the two electrode blocks are of the same size, and the two side electrodes are of the same size.
[0015] As a preferred embodiment of the adjustable thick film patch fuse of the present invention, the height of the melting point is higher than the upper surface of the melt portion.
[0016] The beneficial effects of this utility model include: by adjusting the alloy size, the invention can print different alloy sizes; the fuse melting point can be adjusted, and a layer of alloy is printed below the fuse, making it applicable to a wider range of chip resistor production, achieving a change in the fuse melting point, and also optimizing the production process: ceramic substrate → surface electrode screen printing → drying → sintering → alloy layer screen printing → drying → sintering → fuse screen printing → drying → sintering → flux forming. The alloy layer is placed on the side, allowing the flux to be printed after the melt is formed, facilitating temperature control and increasing the contact area with the melt, resulting in a more effective fluxing effect. Simultaneously, a glass protective layer can be printed on the upper surface of the melt. BRIEF DESCRIPTION OF THE DRAWINGS
[0017] In order to more clearly illustrate the technical solutions of the embodiments of the present invention, the following briefly introduces the drawings required for describing the embodiments. Obviously, the drawings described below are only some embodiments of the present invention. For those skilled in the art, other drawings can be obtained based on these drawings without inventive work. Among them:
[0018] Figure 1 This is a schematic diagram of the overall structure of an adjustable thick film patch fuse according to an embodiment of the present invention;
[0019] Figure 2 An exploded diagram of the structure of an adjustable thick film patch fuse according to an embodiment of the present invention;
[0020] Figure 3 This is a schematic diagram of the side electrode structure of an adjustable thick film patch fuse according to an embodiment of the present invention. DETAILED DESCRIPTION
[0021] In order to make the above-mentioned objects, features and advantages of the present invention more obvious and easy to understand, the specific implementation methods of the present invention are described in detail below with reference to the accompanying drawings.
[0022] In the following description, many specific details are set forth to facilitate a full understanding of the present invention. However, the present invention may also be implemented in other ways different from those described herein. Those skilled in the art may make similar generalizations without violating the connotation of the present invention. Therefore, the present invention is not limited to the specific embodiments disclosed below.
[0023] Next, the present invention is described in detail with reference to schematic diagrams. For ease of illustration, cross-sectional views of device structures may be partially enlarged and not to scale when describing embodiments of the present invention. Furthermore, the schematic diagrams are merely illustrative and should not limit the scope of protection of the present invention. Furthermore, in actual production, three-dimensional dimensions, including length, width, and depth, should be included.
[0024] Furthermore, the term "one embodiment" or "embodiment" herein refers to a specific feature, structure, or characteristic that may be included in at least one implementation of the present invention. The phrase "in one embodiment" appearing in various places throughout this specification does not necessarily refer to the same embodiment, nor does it refer to a separate or selective embodiment that is mutually exclusive with other embodiments.
[0025] Example 1
[0026] Reference Figure 1-3The first embodiment of the present invention is an adjustable thick-film patch fuse comprising an alloy structure 100, comprising a ceramic substrate 101, a melt portion 102, an electrode block 103, an alloy layer 104, and a flux point 105. Two electrode blocks 103 are mounted on the upper surface of the ceramic substrate 101, connected to the melt portion 102. The alloy layer 100 is also connected to the melt portion 102. The flux point 105 is located in the middle of the melt portion 102. Specifically, the ceramic substrate 101 is made of silicon nitride (Si3N4). Si3N4 ceramic has high flexural strength (greater than 800 MPa) and excellent wear resistance, making it one of the ceramic materials with the best overall mechanical properties. It also has the lowest coefficient of thermal expansion. However, due to its complex preparation process, high cost, and low thermal conductivity, it is primarily suitable for applications requiring high strength but low heat dissipation. The electrode blocks 103 are mounted on the left and right ends of the ceramic substrate 101. Common electrode materials include metals and conductive polymers. Metals offer the advantages of good conductivity and strong adhesion, while conductive polymers offer lower cost, better plasticity, and a good match in thermal expansion coefficient with the ceramic substrate 101. Silver electrodes: Through a silver plating process, metallic silver powder is mixed with a small amount of lead borosilicate glass frit to form a paste, which is then applied to the ceramic surface. The paste is then heated to 500-800°C to decompose the organic matter, melt the glass frit, and tightly adhere the silver particles to the ceramic surface. The silver electrode film is typically 8μm thick, with an adhesion strength of 20N / mm². Nickel electrodes: Using an electroless nickel plating process, a metallic nickel layer is formed on the ceramic surface through a series of chemical reactions. The nickel electrode film is typically 3μm thick, with an adhesion strength of 10N / mm². Two electrode blocks 103 are provided, each printed on the upper surface of the ceramic substrate 101. The two electrode blocks 103 are arranged opposite each other, and the width of the electrode blocks 103 is smaller than that of the ceramic substrate 101. The pair of electrode blocks 103 are respectively mounted on the left and right ends of the upper surface of the ceramic substrate 101. An alloy layer 104 is printed or attached between the two electrode blocks 103. The alloy layer 104 passes through the melt portion 102, and the thickness of the alloy layer 104 is smaller than that of the electrode blocks 103. The melt portion 102 is rectangular in shape and is mounted on the electrode blocks 103, with each end of the melt portion 102 placed on an electrode block 103. In order to enable contact between the melt portion 102 and the alloy layer 104, the melting point 105 on the melt portion 102 is first placed through a reserved hole. At the same time, the melting point can also be set on the side. The advantage of setting it on the side is that the melting point can be printed after the melt is formed, which facilitates temperature control and increases the contact area with the melt. The fluxing effect is better, and the glass protective layer can be printed on the upper surface of the melt. Most of the existing technologies use a structure that reduces the melting point of the fuse, and use the fluxing point 105 to change the melting point of the fuse.When the current in the circuit exceeds the rated current that the fuse can withstand, the temperature of the fuse gradually rises as the resistor continues to heat. When the temperature of the fuse reaches the melting point of its material, it quickly melts. Once the fuse melts, the current path in the circuit is severed, preventing overcurrent from damaging the circuit and equipment. This utility model utilizes an alloy structure to adjust the melting point. Alloy layer screen printing involves screen printing an alloy material to form a uniform alloy coating on a specific substrate. This printing method is typically used to create alloy layer surfaces with specific performance requirements. Alloy layer screen printing is commonly used to manufacture high-precision, high-performance parts and products, such as electronic components and mechanical parts. Alloy layer screen printing prints an alloy layer beneath the fuse, and the size of the alloy layer 104 can be adjusted. Adding the alloy layer screen printing, drying, and sintering process steps to the resistor's ceramic substrate 101 can improve the material's strength and toughness. The addition of the alloy creates metallic compounds in the ceramic material, which significantly enhance the material's strength and toughness. For example, adding WC to cermets can improve wettability and sintering properties, increasing the material's fracture toughness. Adding Mo or Mo2C can significantly improve Ni's wettability on TiC, refine the grain size, and improve the material's fracture toughness. Enhanced wear resistance: Alloying elements increase the density and uniformity of ceramic materials during sintering, making the surface smoother and harder, thereby improving wear resistance. Especially when alloying with nano-ceramic powders, the alloy layer can reach thicknesses ranging from tens of microns to 3 mm, creating a dense substrate surface with high bonding strength, effectively improving the substrate's surface wear resistance.
[0027] Improve thermal conductivity: Metal has good thermal conductivity. Its addition can increase the thermal conductivity of ceramic materials, making them more thermally conductive and thus suitable for applications in high temperature environments.
[0028] Electromagnetic Shielding Performance: Coating a layer of alloy 104, such as Co-P or Co-Ni-P alloy, on the surface of a ceramic sheet can be used as a magnetic coating with strong anti-interference capabilities, making it suitable for use as a shielding material for high-power and highly sensitive instruments. Strong and Uniform Bonding: Laser-activated metallization technology enables the alloy layer to bond to the ceramic substrate to reach 45 MPa, ensuring a uniform coating regardless of the complexity of the object being plated. Cost Reduction: Improving the performance of the ceramic material reduces the consumption of precious metals, thereby lowering costs. The structure for lowering the melting point of the fuse utilizes a flux 105 to adjust the melting point of the fuse. The process steps are: ceramic substrate → surface electrode screen printing → drying → sintering → fuse screen printing → drying → sintering → flux forming. The present invention utilizes an alloy structure to adjust the melting point. The process flow is: ceramic substrate → surface electrode screen printing → drying → sintering → alloy layer screen printing → drying → sintering → fuse screen printing → drying → sintering → flux forming. Advantages of screen printing on an alloy layer: High wear resistance: The alloy layer screen printing has high wear resistance and can withstand long periods of use without noticeable wear. Good corrosion resistance: The screen printing alloy has good corrosion resistance and can withstand long-term use in humid or high-temperature environments without rusting or corroding. Good dimensional stability: The screen printing alloy has good dimensional stability, which can ensure that the product's performance will not be affected by dimensional changes during use. Strong applicability: Screen printing can be performed not only on flat surfaces, but also on curved surfaces of special shapes, and is suitable for a variety of materials such as paper, plastic, glass, and metal. Strong adhesion: The screen-printed alloy layer has strong adhesion, and screen printing has a high printing speed, making it suitable for mass production. Strong light resistance: The patterns or text screen-printed on the alloy layer are highly light-resistant and are not affected by temperature or sunlight. Drying to remove moisture: The drying process can remove moisture from the ceramic substrate and alloy layer, preventing internal stress caused by water evaporation during high-temperature sintering, which can lead to cracking or breaking. Improve mechanical strength: After removing moisture, the ceramic substrate 101 and the alloy layer 104 can form a more complete skeleton structure, improving mechanical strength. Reduce sintering shrinkage and cracking risk: Drying can effectively reduce shrinkage and cracking risk during sintering, ensuring the quality of the finished product.
[0029] Sintering improves bonding strength: The sintering process creates a tighter bond between alloy layer 104 and ceramic substrate 101, enhancing the stability and reliability of the overall structure. Improved performance: The sintered alloy layer 104 exhibits improved electrical, thermal, and mechanical properties, further enhancing the overall performance of ceramic substrate 101. Miniaturization and lightweighting: The sintered ceramic substrate 101 achieves miniaturization and lightweighting, meeting the demands of modern electronic devices for miniaturization and lightweighting.
[0030] In summary, by providing an alloy layer and side electrodes within the fuse, the side electrodes offer the advantage of allowing for printing of the flux after the melt has been formed, facilitating temperature control and increasing the contact area with the melt. This enhances the fluxing effect, and a protective glass layer can be printed on the upper surface of the melt. The dimensions of the alloy layer 104 and side electrodes 106 are not limited and can be selected as needed.
[0031] It is important to note that the construction and arrangement of the present application as shown in a number of different exemplary embodiments are illustrative only. Although only a few embodiments are described in detail in this disclosure, those reading this disclosure will readily appreciate that many modifications are possible (e.g., size, dimensions, structure, shape and proportions of the various elements, and parameter values, etc.) without materially departing from the novel teachings and advantages of the subject matter described in this application.
[0032] Additionally, in order to provide a concise description of example embodiments, all features of an actual embodiment (ie, those features that are not relevant to the best mode presently contemplated for carrying out the invention or those that are not relevant to implementing the invention) may not be described.
[0033] It will be appreciated that in the development of any actual embodiment, as in any engineering or design project, numerous implementation-specific decisions may be made. Such a development effort may be complex and time-consuming, but will, for those of ordinary skill having the benefit of this disclosure, be a routine undertaking of design, fabrication, and production without undue experimentation.
[0034] It should be noted that the above embodiments are only used to illustrate the technical solutions of the present invention and are not intended to limit the present invention. Although the present invention has been described in detail with reference to the preferred embodiments, those skilled in the art should understand that the technical solutions of the present invention may be modified or replaced by equivalents without departing from the spirit and scope of the technical solutions of the present invention, and all of these should be included in the scope of the claims of the present invention.
Claims
1. An adjustable thick film patch fuse, comprising an alloy structure (100), characterized in that: The alloy structure comprises a ceramic substrate (101), a melt portion (102), an electrode block (103) and an alloy layer (104); two electrode blocks (103) are mounted on the upper surface of the ceramic substrate (101); the electrode blocks (103) are connected to the melt portion (102); the alloy layer (104) is connected to the melt portion (102); a side electrode (106) is provided on the side wall of the ceramic substrate (101); the side electrode (106) is connected to the melt portion (102) and the electrode block (103).
2. The adjustable thick film chip fuse according to claim 1, characterized in that: The electrode blocks (103) are respectively mounted on both ends of the left and right upper surfaces of the ceramic substrate (101).
3. The adjustable thick film chip fuse according to claim 1, characterized in that: The alloy layer (104) is arranged between two electrode blocks (103), and the thickness of the alloy layer (104) is lower than the thickness of the electrode block (103).
4. The adjustable thick film chip fuse according to claim 3, characterized in that: The width of the alloy layer (104) is greater than the width of the melt portion (102).
5. The adjustable thick film chip fuse according to claim 1, characterized in that: The melt portion (102) is rectangular in shape and is arranged on two electrode blocks (103) and electrically connected to the electrode blocks (103).
6. The adjustable thick film chip fuse according to claim 1, characterized in that: Two symmetrical side electrodes (106) are formed on both sides of the ceramic substrate (101).
7. The adjustable thick film chip fuse according to claim 6, characterized in that: The side electrodes (106) cover the surfaces of the melt portion (102) and the electrode block (103).
8. The adjustable thick film chip fuse according to claim 7, characterized in that: The two electrode blocks (103) have the same size, and the two side electrodes (106) have the same size.
9. The adjustable thick film chip fuse according to claim 1, characterized in that: The width of the alloy layer (104) is greater than the width of the melt portion (102).
10. The adjustable thick film chip fuse according to claim 2, characterized in that: The height of the melting point (105) is higher than the upper surface of the melt portion (102).