Vacuum coating equipment, conductive film and pole piece

Abstract

The utility model discloses a vacuum coating equipment, conducting film and pole piece, the vacuum coating equipment includes equipment body, vapor plating subassembly and magnetron sputtering subassembly, the equipment body is equipped with the vacuum cabin, the vacuum cabin includes the first cabin and the second cabin that are arranged separately, and the first cabin and the second cabin are equipped with the magnetron sputtering subassembly. A membrane penetrating gap is formed in the side wall between the first cabin and the second cabin and is communicated with the first cabin and the second cabin; the evaporation component is mounted in the first cabin and is at least used for plating metal main body layers on the two opposite surfaces of the conductive film; and the magnetron sputtering assembly is mounted in the second cabin and is used for plating an isolating layer on the surface of the metal main body layer on one surface of the conductive film. According to the utility model, the problems that the plating efficiency is low and the film forming quality of a copper film on the conductive film is influenced when the conductive film with an anti-sticking function is plated by adopting the existing film plating equipment are solved.

Description

Technical Field

[0001] The present application relates to the field of thin film technology, and in particular to a vacuum coating device, a conductive film and an electrode. Background Art

[0002] Conductive film, a thin film structure with a metal film layer plated on the surface of a polymer substrate, is widely used in lithium-ion batteries, primarily as a current collector. When the conductive film, obtained by copper plating on both opposing sides of the polymer substrate, is wound and unwound, the copper films on the opposing sides can easily stick to each other, or "sticking to the film," causing adhesion failure during the unwinding process. This can lead to delamination defects, where the copper layer on the substrate surface partially or sporadically falls off, severely impacting the film's quality.

[0003] In order to prevent the copper films on the two opposite sides of the conductive film from sticking to each other, it is desired to provide a functional layer on at least one side of the conductive film to prevent the copper films from sticking to each other. However, if the conductive film with anti-sticking function is plated using existing coating equipment, not only is the coating efficiency low, but it also affects the film quality of the copper film on the conductive film. Utility Model Content

[0004] The main purpose of the present application is to provide a vacuum coating equipment, a conductive film and an electrode to solve the problem mentioned in the background technology that the use of existing coating equipment to coat a conductive film with an anti-sticking function not only has low coating efficiency but also affects the film formation quality of the copper film on the conductive film.

[0005] According to a first aspect of the present application, a vacuum coating device is provided, comprising:

[0006] An apparatus body, wherein a vacuum chamber is disposed within the apparatus body, the vacuum chamber comprising a first chamber and a second chamber that are separated from each other, a transmembrane slit being disposed on a side wall between the first chamber and the second chamber, the transmembrane slit communicating with the first chamber and the second chamber;

[0007] an evaporation assembly installed in the first chamber, the evaporation assembly being used to deposit a metal main layer on two opposite sides of the conductive film;

[0008] A magnetron sputtering assembly is installed in the second chamber, and is used to plate an isolation layer on the surface of the metal main layer on one side of the conductive film.

[0009] Furthermore, the evaporation assembly includes:

[0010] a first evaporation component, the first evaporation component comprising a first cold roller and a first evaporator, the first evaporator being located on one side of the first cold roller along its radial direction;

[0011] The second evaporation component includes a second cold roller and a second evaporator, and the second evaporator is located on one side of the second cold roller along its own radial direction.

[0012] Furthermore, the magnetron sputtering assembly includes:

[0013] a third cold roller, the third cold roller being installed in the second cabin;

[0014] A magnetron sputtering device is provided on one side of the third cold roller along its own radial direction.

[0015] Furthermore, the transmembrane slit includes a first transmembrane slit and a second transmembrane slit, and the vacuum chamber further includes:

[0016] The third cabin is arranged between the first cabin and the second cabin, the first transmembrane slit is arranged on the side wall of the third cabin close to the second cabin and is connected to the second cabin, and the second transmembrane slit is arranged on the side wall of the third cabin away from the second cabin and is connected to the first cabin.

[0017] Furthermore, the volume of the second compartment is smaller than that of the third compartment, and the second compartment is located in the third compartment.

[0018] Furthermore, the volume of the second compartment is greater than that of the third compartment, and the third compartment is arranged on the outer side wall of the second compartment.

[0019] Furthermore, the volume of the second chamber and the volume of the third chamber are both smaller than the volume of the first chamber, and the second chamber and the third chamber are both located in the first chamber and spaced apart from the evaporation assembly.

[0020] Furthermore, the transmembrane slit further includes a third transmembrane slit, and the vacuum chamber further includes:

[0021] The fourth cabin is arranged adjacent to the first cabin, the third transmembrane slit is arranged on the side wall of the fourth cabin close to the first cabin and is connected to the first cabin, the volume of the second cabin and the volume of the third cabin are both smaller than the volume of the fourth cabin, the second cabin and the third cabin are both located in the fourth cabin, and the second transmembrane slit is connected to the fourth cabin.

[0022] Furthermore, it also includes:

[0023] an unwinding assembly, the unwinding assembly being installed in the first compartment or the second compartment; and / or,

[0024] A winding assembly is installed in the second chamber, or the winding assembly is installed in the vacuum chamber but is misplaced in the second chamber.

[0025] According to a second aspect of the present application, a conductive film is provided. The conductive film is prepared by the vacuum coating apparatus described above, or the conductive film is prepared by the conductive film preparation method described above, and the conductive film comprises:

[0026] A substrate layer, along a first direction, the substrate layer comprising a first surface and a second surface;

[0027] a first metal layer, the first metal layer being disposed on the first surface;

[0028] a second metal layer, the second metal layer being disposed on the second surface;

[0029] An isolation layer is provided on surfaces of the first metal layer and the second metal layer away from the substrate layer, and the isolation layer comprises a metal oxide layer.

[0030] Furthermore, the metal oxide layer includes at least one of a titanium oxide layer, a copper oxide layer, and an aluminum oxide layer; and / or, along the first direction, the thickness of the metal oxide layer is between 0.5 nm and 10 nm.

[0031] According to a third aspect of the present application, a pole piece is provided, the pole piece comprising a current collector, and the current collector comprises the conductive film provided in the second aspect of the present application.

[0032] The vacuum coating equipment in the present application includes an equipment body, an evaporation component and a magnetron sputtering component. A vacuum chamber is provided in the equipment body. The vacuum chamber includes a first chamber and a second chamber that are separated. A film-penetrating gap is provided on the side wall between the first chamber and the second chamber. The film-penetrating gap connects the first chamber and the second chamber so that the substrate layer of the conductive film can pass through the first chamber and the second chamber. The evaporation component is installed in the first chamber to evaporate a metal main layer on the substrate layer through the evaporation component in the first chamber. The magnetron sputtering component is installed in the second chamber to plate an isolation layer on the surface of the metal main layer away from the substrate layer through the magnetron sputtering component in the second chamber. The isolation layer can isolate the metal main layers on the opposite sides of the conductive film. When the wound conductive film is unwound, the metal main layers on the opposite sides of the conductive film will not separate from the substrate layer, that is, no delamination defects will appear on the surface of the conductive film, thereby improving the quality of the finished product of the conductive film.

[0033] That is to say, the present application can utilize the vacuum coating equipment to first evaporate the metal main layer using the evaporation component in the first chamber, and then transfer the conductive film to the second chamber to coat the isolation layer on the surface of the metal main layer through the magnetron sputtering component. Since the thermal evaporation process performed by the evaporation component is more efficient when processing the metal main layer that focuses on conductivity, and the magnetron sputtering process performed by the magnetron sputtering component has more precise control over the composition, thickness and uniformity of functional layers such as the isolation layer, the evaporation component and the magnetron sputtering component are combined to obtain a conductive film with an anti-sticking effect. While ensuring the high quality of the conductive film, it can also achieve the best balance between cost and efficiency. At the same time, since the evaporation component and the magnetron sputtering component are located in different chambers, the two chambers are connected only by a film-penetrating gap. The gas released by the magnetron sputtering component during the working process is not easy to run into the first chamber to affect the coating efficiency and quality of the evaporation component, so as to improve the film quality and efficiency of the metal main layer obtained by the thermal evaporation process in the process of coating the conductive film by combining the thermal evaporation process and the magnetron sputtering process. BRIEF DESCRIPTION OF THE DRAWINGS

[0034] The drawings described herein are used to provide a further understanding of the present application and constitute a part of the present application. The illustrative embodiments of the present application and their descriptions are used to explain the present application and do not constitute an improper limitation on the present application. In the drawings:

[0035] Figure 1 A schematic structural diagram of a vacuum coating device provided in one embodiment of the present invention;

[0036] Figure 2 This is a schematic diagram of the structure of the vacuum coating equipment including the third chamber;

[0037] Figure 3 Schematic diagram of the structure of the vacuum coating equipment when the second chamber and the third chamber are both located in the first chamber;

[0038] Figure 4 This is a schematic diagram of the structure of the vacuum coating equipment including the fourth chamber;

[0039] Figure 5 A schematic flow chart of a method for preparing a conductive film according to an embodiment of the present invention;

[0040] Figure 6 This is a schematic structural diagram of a conductive film provided in one embodiment of the present utility model.

[0041] The above drawings include the following reference numerals:

[0042] 10. Equipment body; 11. First cabin; 12. Second cabin; 121. Transmembrane gap; 13. Third cabin; 14. Fourth cabin; 20. Evaporation assembly; 21. First evaporation component; 211. First cold roller; 212. First evaporator; 22. Second evaporation component; 221. Second cold roller; 222. Second evaporator; 30. Magnetron sputtering assembly; 31. Third cold roller; 32. Magnetron sputtering; 40. Unwinding assembly; 50. Rewinding assembly; 60. Conveyor roller; 70. Conductive film; 71. Base material layer; 711. First surface; 712. Second surface; 72. First metal layer; 73. Second metal layer; 74. Isolation layer; 75. Adhesion enhancing layer. DETAILED DESCRIPTION

[0043] It should be noted that, in the absence of conflict, the embodiments and features of the embodiments in this application can be combined with each other. The present application will be described in detail below with reference to the accompanying drawings and in combination with the embodiments.

[0044] It should be noted that the terms used herein are only for describing specific embodiments and are not intended to limit the exemplary embodiments according to the present application. As used herein, unless the context clearly indicates otherwise, the singular form is also intended to include the plural form. In addition, it should be understood that when the terms "comprise" and / or "include" are used in this specification, they indicate the presence of features, steps, operations, devices, components and / or combinations thereof.

[0045] Unless otherwise specifically stated, the relative arrangement of the parts and steps, numerical expressions and numerical values set forth in these embodiments do not limit the scope of the present application. At the same time, it should be understood that, for ease of description, the sizes of the various parts shown in the drawings are not drawn according to actual proportional relationships. The techniques, methods and equipment known to those of ordinary skill in the relevant art may not be discussed in detail, but where appropriate, the techniques, methods and equipment should be considered as part of the authorization specification. In all examples shown and discussed here, any specific values should be interpreted as being merely exemplary, not as limitations. Therefore, other examples of the exemplary embodiments may have different values. It should be noted that similar numbers and letters represent similar items in the following figures, and therefore, once an item is defined in one figure, it does not need to be further discussed in subsequent figures.

[0046] To solve the problem that using existing coating equipment to coat a conductive film 70 with an anti-sticking function not only results in low coating efficiency but also affects the film quality of the copper film on the conductive film 70, a first embodiment of the present invention provides a vacuum coating equipment, which includes an equipment body 10, an evaporation assembly 20, and a magnetron sputtering assembly 30.

[0047] See Figures 1 to 4 A vacuum chamber is provided in the device body 10, and the vacuum chamber includes a first chamber 11 and a second chamber 12 that are separated. A transmembrane slit 121 is provided on the side wall between the first chamber 11 and the second chamber 12, and the transmembrane slit 121 connects the first chamber 11 and the second chamber 12. The evaporation assembly 20 is installed in the first chamber 11, and the evaporation assembly 20 is at least used to plate a metal main layer on two opposite sides of the conductive film 70. The magnetron sputtering assembly 30 is installed in the second chamber 12, and the magnetron sputtering assembly 30 is used to plate an isolation layer 74 on the surface of the metal main layer on one side of the conductive film. In this embodiment, after the metal main layer is plated on the surface of the substrate layer 71 of the conductive film 70 by the evaporation assembly 20 in the first chamber 11, the substrate layer 71 is transferred to the second chamber 12, so that the isolation layer 74 is plated on the surface of the metal main layer by the magnetron sputtering assembly 30. In this embodiment, the isolation layer 74 deposited by the magnetron sputtering assembly 30 may include at least one of a zinc layer, a tin layer, a nickel-chromium alloy layer (NiCr), a boron trioxide layer, and a copper oxide layer.

[0048] Since the higher the vacuum level in the first chamber 11, the better the evaporation effect of the evaporation assembly 20, if oxygen enters the first chamber 11, this will not only reduce the vacuum level of the first chamber 11, but also, in the presence of oxygen, during the process of the evaporation assembly 20 evaporating a metal main layer (such as a copper film layer) on the surface of the substrate layer 71, metal oxides (such as copper oxide) will be produced at the evaporation liquid surface on the evaporator of the evaporation assembly 20. These metal oxides are equivalent to impurities added to the metal main layer, causing unstable evaporation of the evaporation source, thereby reducing the film quality of the metal main layer deposited by the evaporation assembly 20. If argon gas enters the first chamber 11, the vacuum level of the first chamber 11 will be reduced, and if the magnetron sputtering section contains an oxygen atmosphere that enters the first chamber 11, the metal main layer will be oxidized during the deposition process. At this time, the metal atoms evaporated from the evaporation component 20 will collide with the argon gas during the Brownian motion before being deposited on the surface of the substrate layer 71. The kinetic energy of the metal atoms after the collision will be reduced, which will not only make it difficult for the metal atoms to deposit a metal main layer on the substrate layer 71, thereby reducing the evaporation efficiency of the evaporation component 20 and the film forming efficiency of the metal main layer, but also the metal dust formed by the metal atoms with reduced kinetic energy will fall onto the evaporation component 20 and the devices around the evaporation component 20, causing pollution to the vacuum coating equipment.

[0049] In this embodiment, the first chamber 11 and the second chamber 12 are connected through a transmembrane gap 121, which is only for the conductive film 70 to pass through. This can prevent argon, oxygen and other gases in the magnetron sputtering component 30 in the second chamber 12 from entering the first chamber 11 and affecting the evaporation effect and efficiency of the evaporation component 20.

[0050] As can be seen, the vacuum coating apparatus in this embodiment includes an apparatus body 10, an evaporation assembly 20, and a magnetron sputtering assembly 30. A vacuum chamber is disposed within the apparatus body 10. The vacuum chamber includes a first chamber 11 and a second chamber 12, which are separated. A transmembrane slit 121 is disposed on the sidewall between the first chamber 11 and the second chamber 12. The transmembrane slit 121 connects the first chamber 11 and the second chamber 12, allowing the substrate layer 71 of the conductive film 70 to pass between the first chamber 11 and the second chamber 12. The evaporation assembly 20 is installed within the first chamber 11 to evaporate a metal main layer onto the substrate layer 71 in the first chamber 11 through the evaporation assembly 20. The magnetron sputtering assembly 30 is installed in the second chamber 12, so that an isolation layer 74 is plated on the surface of the metal main layer away from the substrate layer 71 in the second chamber 12 through the magnetron sputtering assembly 30. The isolation layer 74 can isolate the metal main layers on the two opposite sides of the conductive film 70. When the wound conductive film 70 is unwound, the metal main layers on the two opposite sides of the conductive film 70 will not separate from the substrate layer 71, that is, there will be no delamination defects on the surface of the conductive film 70, thereby improving the quality of the finished product of the conductive film 70.

[0051] That is, in this embodiment, the vacuum coating equipment can be used to first evaporate the metal main layer in the first chamber 11 using the evaporation assembly 20, and then transfer the conductive film 70 to the second chamber 12 to coat the isolation layer 74 on the surface of the metal main layer using the magnetron sputtering assembly 30. Since the thermal evaporation process performed by the evaporation assembly 20 is more efficient when processing the metal main layer that focuses on conductivity, and the magnetron sputtering process performed by the magnetron sputtering assembly 30 has more precise control over the composition, thickness, and uniformity of functional layers such as the isolation layer 74, the combination of the evaporation assembly 20 and the magnetron sputtering assembly 30 is used to coat the conductive film 70 with an anti-sticking effect, which can ensure the high quality of the conductive film 70 while achieving the best balance between cost and efficiency. At the same time, since the evaporation component 20 and the magnetron sputtering component 30 are located in different chambers, the two chambers are connected only by the transmembrane gap 121. The gas released by the magnetron sputtering component 30 during operation is not easy to run into the first chamber 11 to affect the coating efficiency of the evaporation component 20 and the film forming quality of the metal main layer. In the process of combining the thermal evaporation process and the magnetron sputtering process to coat the conductive film 70, the film forming quality and efficiency of the metal main layer obtained by coating under the thermal evaporation process are improved.

[0052] The evaporation assembly 20 in this embodiment includes a first evaporation component 21 and a second evaporation component 22. The first evaporation component 21 includes a first cold roller 211 and a first evaporator 212. The first evaporator 212 is located on one side of the first cold roller 211 along its own radial direction. In the process of the substrate layer 71 of the conductive film 70 passing around the first cold roller 211, a metal main layer that meets the conductive properties is evaporated onto one surface of the substrate layer 71 along its own thickness direction by the first evaporator 212. The second evaporation component 22 includes a second cold roller 221 and a second evaporator 222, and the second evaporator 222 is located on one side of the second cold roller 221 along its own radial direction. In the process of the substrate layer 71 passing around the second cold roller 221, a metal main layer that meets the conductive properties is evaporated onto the other surface of the substrate layer 71 along its own thickness direction by the second evaporator 222. In other words, in this embodiment, the substrate layer 71 can be sequentially unwound to the first evaporator 212 and the second evaporator 222 in the first chamber 11, so that the metal bulk layer can be efficiently deposited on two opposite sides of the substrate layer 71 along its thickness direction by the first evaporator 212 and the second evaporator 222, respectively. Furthermore, because the gas in the second chamber 12 is unlikely to enter the first chamber 11 and adversely affect the evaporated film in the first evaporator 212 and the second evaporator 222, the film quality of the metal bulk layer is guaranteed.

[0053] At the same time, in order to further prevent the argon gas in the magnetron sputtering assembly 30 in the second chamber 12 from affecting the evaporation efficiency and coating effect of the evaporation assembly, the present embodiment requires that the transmembrane slit 121 be located at a position relatively far from the first evaporation component 21 and the second evaporation component 22. For example, at least one of the first evaporator 212 and the second evaporator 222 is located at the position farthest from the transmembrane slit 121 in the first chamber 11. In particular, once the size and space of the first chamber 11 are determined, considering the gravity of the side wall between the first chamber 11 and the second chamber 12, in principle, the transmembrane slit 121 opened on the side wall between the first chamber 11 and the second chamber 12 is located at an upper position of the side wall away from the ground, thereby reducing the influence of the argon gas in the second chamber 12 on the evaporation assembly 20.

[0054] Of course, to transfer the substrate layer 71 from the first evaporator 212 to the second evaporator 222, and then transfer the substrate layer 71 from the second evaporator 222 to the magnetron sputtering assembly 30 in the second chamber 12, the vacuum coating apparatus provided in this embodiment further includes a transport assembly. The transport assembly may include multiple transport rollers 60, each of which may include a conveyor roller and / or a pressure roller. To this end, in this embodiment, multiple conveyor rollers and / or pressure rollers may be installed between the first evaporation component 21 and the second evaporation component 22 to transfer the substrate layer 71 from the first evaporation component 21 to the second evaporation component 22 via the multiple conveyor rollers and / or pressure rollers. In this embodiment, one or more conveyor rollers 60 are further provided between the second evaporation component 22 and the second chamber 12, and between the transmembrane slit 121 and the magnetron sputtering assembly 30, respectively. The one or more conveyor rollers 60 are used to transfer the substrate layer 71, after being coated with the metal main layer, along the transmembrane slit 121 to the magnetron sputtering assembly 30 in the second chamber 12.

[0055] like Figures 1 to 4 As shown, the magnetron sputtering assembly 30 in this embodiment includes a third cold roller 31 and a magnetron sputtering device 32, and the third cold roller 31 is installed in the second chamber 12. The magnetron sputtering device 32 is arranged on one side of the third cold roller 31 along its own radial direction, so that the metal particles sputtered by the metal target material are deposited on the surface of the metal main layer by the magnetron sputtering device 32 to form an isolation layer 74. Therefore, in this embodiment, after the metal main layer is plated on the opposite sides of the substrate layer 71 by the first evaporation component 21 and the second evaporation component 22 in the first chamber 11, the substrate layer 71 is transferred along the film-penetrating gap 121 to the third cold roller 31 in the second chamber 12, and the isolation layer 74 is plated on the metal main layer on one surface of the substrate layer 71 by the magnetron sputtering device 32 at the third cold roller 31, thereby obtaining a conductive film 70 with an anti-sticking function, with high production efficiency and good film quality.

[0056] During operation, the gas generated by the magnetron sputtering device 32 in the second chamber 12 is not easy to enter the first chamber 11 through the transmembrane gap 121, especially when the air pressure in the second chamber 12 at least near the transmembrane gap 121 is lower than the air pressure in the first chamber 11. This can prevent the gas from entering the first chamber 11 along the transmembrane gap 121 and affecting the evaporation of the evaporation component 20, thereby ensuring the film formation quality of the metal main layer.

[0057] See Figures 2 to 4, the transmembrane gap 121 in this embodiment includes a first transmembrane gap and a second transmembrane gap, and the vacuum chamber also includes a third chamber 13. The third chamber 13 is arranged between the first chamber 11 and the second chamber 12, the first transmembrane gap is arranged on the side wall of the third chamber 13 close to the second chamber 12 and is connected to the second chamber 12, and the second transmembrane gap is arranged on the side wall of the third chamber 13 away from the second chamber 12 and is connected to the first chamber 11. It can be seen that in this embodiment, a third chamber 13 is also arranged between the first chamber 11 and the second chamber 12, and the third chamber 13 is connected to the second chamber 12 and the first chamber 11 respectively through the first transmembrane gap and the second transmembrane gap. Therefore, during the operation of the magnetron sputtering assembly 30 in the second chamber 12, the third chamber 13 can further ensure that gases such as oxygen and argon generated in the second chamber 12 are not easy to enter the first chamber 11. Since the first chamber 11 and the second chamber 12 are separated by the third chamber 13, even if the gas in the second chamber 12 leaks along the first transmembrane gap, the third chamber 13 can store the leaked gas for a certain period of time, greatly reducing the risk of gas entering the first chamber 11 along the second transmembrane gap.

[0058] Among them, this embodiment can make the air pressure of the third cabin 13 at least located at the second transmembrane gap lower than the air pressure of the first cabin 11. Therefore, when the gas in the second cabin 12 leaks into the third cabin 13, the gas can be prevented from entering the first cabin 11 along the second transmembrane gap, thereby ensuring the evaporation efficiency and evaporation effect of the evaporation assembly 20 in the first cabin 11. The air pressure of the first cabin 11 at least located at the first transmembrane gap is lower than the air pressure of the third cabin 13. Therefore, the gas in the first cabin 11 can be prevented from entering the third cabin 13 along the first transmembrane gap, further improving the sealing of the gas in the second cabin 12. In this embodiment, different vacuum pumps (such as vacuum pumps) can be used to perform vacuum operations on the first cabin 11 and the third cabin 13 to ensure that the air pressure of the third cabin 13 is greater than the air pressure of the second cabin 12 and less than the air pressure of the first cabin 11, thereby preventing the gas in the second cabin 12 from entering the first cabin 11.

[0059] In one embodiment of the present invention, the volume of the second compartment 12 is smaller than the volume of the third compartment 13, and the second compartment 12 is located inside the third compartment 13 (e.g. Figure 2 At this time, the outer peripheral wall of the second chamber 12 is surrounded by the space in the third chamber 13, thereby reducing the risk of gas in the second chamber 12 leaking into the first chamber 11 along the transmembrane slit 121.

[0060] like Figure 3 and Figure 4As shown, in another embodiment of the present invention, the volume of the second chamber 12 is larger than that of the third chamber 13, and the third chamber 13 is disposed on the outer sidewall of the second chamber 12. In other words, the third chamber 13 is disposed on the outer sidewall of the second chamber 12, and the third chamber 13 and the second chamber 12 are connected via a first transmembrane slit. Thus, the third chamber 13 isolates the first chamber 11 from the second chamber 12, reducing the risk of gas in the second chamber 12 leaking into the first chamber 11.

[0061] like Figure 3 As shown, in another embodiment of the present invention, the volume of the second chamber 12 and the volume of the third chamber 13 are both smaller than the volume of the first chamber 11, and the second chamber 12 and the third chamber 13 are both located in the first chamber 11 and spaced apart from the evaporation assembly 20. In other words, the second chamber 12 and the third chamber 13 are both located in the first chamber 11, and the second chamber 12 is separated from the first chamber 11 by the third chamber 13. This structure not only reduces the risk of gas leakage from the second chamber 12 into the first chamber 11, but also increases the volume of the first chamber 11 when the volume of the vacuum coating equipment is constant, so that the first chamber 11 can have enough space to install auxiliary devices required for the coating process (such as the transmission roller, the unwinding assembly 40 and / or the winding assembly 50).

[0062] See Figure 4 , the transmembrane gap 121 also includes a third transmembrane gap, and the vacuum chamber in the vacuum coating equipment also includes a fourth chamber 14. The fourth chamber 14 is arranged adjacent to the first chamber 11, and the third transmembrane gap is arranged on the side wall of the fourth chamber 14 close to the first chamber 11 and is connected to the first chamber 11. When the volume of the second chamber 12 and the volume of the third chamber 13 are both smaller than the volume of the fourth chamber 14, the second chamber 12 and the third chamber 13 are both located in the fourth chamber 14, and the second transmembrane gap is connected to the fourth chamber 14. That is to say, in this embodiment, while isolating the first chamber 11 and the second chamber 12 by the third chamber 13, the second chamber 12 and the third chamber 13 are also isolated from the first chamber 11 by the fourth chamber 14, so as to further reduce the risk of the gas in the second chamber 12 entering the first chamber 11 through the fourth chamber 14.

[0063] In this embodiment, the air pressure in the fourth chamber 14 at least near the third transmembrane gap can be made lower than the air pressure in the first chamber 11. Thus, even if the gas in the second chamber 12 enters the fourth chamber 14 along the third chamber 13, the fourth chamber 14 can not only temporarily store the leaked gas, but also ensure that the gas does not enter the first chamber 11 along the third transmembrane gap. And / or, the air pressure in the third chamber 13 at least near the second transmembrane gap is lower than the air pressure in the fourth chamber 14. Thus, even if the gas in the second chamber 12 enters the third chamber 13, the third chamber 13 can not only temporarily store the leaked gas for a certain period of time, but also prevent the gas from entering the fourth chamber 14 along the second transmembrane gap, further improving the working stability and reliability of the evaporation assembly 20 in the first chamber 11.

[0064] The vacuum coating equipment in this embodiment also includes an unwinding assembly 40 and / or a rewinding assembly 50. The unwinding assembly 40 is installed in the first chamber 11 or in the second chamber 12. When the unwinding assembly 40 is installed in the first chamber 11, the unwinding assembly 40 can be specifically installed in a position close to the first evaporation component 21, so that the substrate layer 71 of the conductive film 70 is efficiently transferred to the first evaporation component 21 through the unwinding assembly 40 to start the coating of the metal main layer. In this embodiment, when the unwinding assembly 40 is installed in the second chamber 12, in order to avoid opening more transmembrane slits 121 and increasing the risk of gas in the second chamber 12 entering the first chamber 11. In this embodiment, the unwinding assembly 40 can pass the unwound substrate layer 71 from the second chamber 12 to the first chamber 11 along the transmembrane slits 121, and then transfer the substrate layer 71 to the evaporation assembly 20 through the transfer roller 60 to coat the metal main layer on both sides of the substrate layer 71. After the main metal layer is plated, the substrate layer 71 is passed through the same through-film slit 121 into the magnetron sputtering assembly 30 in the second chamber 12 to plate the isolation layer 74. This not only improves the production efficiency of the conductive film 70, but also the substrate layer 71 is passed through the same through-film slit 121 between the second chamber 12 and the first chamber 11 before and after the main metal layer is plated. This avoids the increased risk of gas leakage caused by the additional through-film slit 121 between the second chamber 12 and the first chamber 11, thereby ensuring the evaporation efficiency and evaporation effect of the evaporation assembly 20 in the first chamber 11. Moreover, in this embodiment, when the unwinding assembly 40 is preferably installed in the second chamber 12, the spatial volume of the first chamber 11 can be reduced, thereby improving the vacuuming efficiency of the vacuum pump when the vacuum pump performs a vacuum operation on the first chamber 11, ensuring that the evaporation assembly 20 efficiently performs the evaporation plating of the main metal layer in the first chamber 11 with a high vacuum degree.

[0065] The winding assembly 50 in this embodiment is installed in the second cabin 12. In this embodiment, when the winding assembly 50 is installed in the second cabin 12, the conductive film 70 coated with the isolation layer 74 can be wound by the winding assembly 50. Or the winding assembly 50 is installed in the vacuum chamber but misplaced in the second cabin 12, that is, the winding assembly 50 is installed outside the second cabin 12. In this regard, it can be specifically installed in the first cabin 11 or the third cabin 13 or the fourth cabin 14. At this time, this embodiment can allow the conductive film 70 to pass through the film-penetrating slit 121 entering the second cabin 12 to the winding assembly 50 outside the second cabin 12. That is to say, before and after the isolation layer 74 is plated, the substrate layer 71 enters the second chamber 12 through the same transmembrane gap 121 or passes through the winding assembly 50 outside the second chamber 12, so as to avoid the risk of gas leakage into the first chamber 11 due to the opening of an additional transmembrane gap 121 between the second chamber 12 and the first chamber 11, thereby ensuring the evaporation efficiency and evaporation effect of the evaporation assembly 20 in the first chamber 11.

[0066] The second embodiment of the present invention provides a method for preparing a conductive film. The method is performed by a vacuum coating device. The structure of the vacuum coating device is detailed in the first embodiment of the present invention. Figure 5 The conductive film preparation method in this embodiment includes the following steps:

[0067] Step S11 : unwinding the substrate layer 71 to the evaporation assembly 20 in the first chamber 11 , so as to deposit a metal main layer on two opposite sides of the substrate layer 71 along its thickness direction by the evaporation assembly 20 using a thermal evaporation process.

[0068] Step S12: The substrate layer 71 is transferred along the transmembrane slit 121 to the magnetron sputtering assembly 30 in the second chamber 12. Using a magnetron sputtering process, the magnetron sputtering assembly 30 deposits an isolation layer 74 on the surface of the metal main layer on one side of the substrate layer 71 to form an anti-sticking conductive film 70. Because the second chamber 12 and the first chamber 11 are connected only by the transmembrane slit 121, gas in the second chamber 12 is unlikely to leak into the first chamber 11, thereby improving the evaporation efficiency and effectiveness of the evaporation assembly 20 and ensuring the film quality of the metal main layer.

[0069] As can be seen, in this embodiment, after the metal main layer is evaporated in the first chamber 11 using the evaporation assembly 20, the conductive film 70 is transferred to the second chamber 12 and the isolation layer 74 is deposited on the surface of the metal main layer by the magnetron sputtering assembly 30. Since the thermal evaporation process performed by the evaporation assembly 20 is more efficient when processing the metal main layer that focuses on conductivity, and the magnetron sputtering process performed by the magnetron sputtering assembly 30 controls the composition, thickness and uniformity of functional layers such as the isolation layer 74 more accurately, the present embodiment combines the evaporation assembly 20 and the magnetron sputtering assembly 30 to deposit the conductive film 70 with an anti-sticking effect, which not only ensures the high quality of the conductive film 70, but also achieves the best balance between cost and efficiency. At the same time, since the evaporation assembly 20 and the magnetron sputtering assembly 30 are located in different chambers and are connected only by the film-penetrating gap 121, the gas released by the magnetron sputtering assembly 30 during operation is not easy to escape to the first chamber 11 and affect the coating efficiency of the evaporation assembly 20 and the film quality of the metal main layer.

[0070] Before forming the anti-sticking conductive film 70 by coating the isolation layer 74 on the surface of the metal main layer away from the substrate layer 71 using a magnetron sputtering process, the method provided in this embodiment further includes:

[0071] The air pressure in the second chamber 12, at least at the transmembrane slit, is adjusted to be lower than the air pressure in the first chamber 11. Since the air pressure in the second chamber 12, at least at the transmembrane slit 121, is adjusted to be lower than the air pressure in the first chamber 11, the gas in the second chamber 12 will not leak into the first chamber 11, thereby improving the evaporation efficiency and effect of the evaporation assembly 20 and ensuring the film formation quality of the metal main layer.

[0072] That is to say, this embodiment ensures that the working process of the evaporation component 20 in the first chamber 11 will not be affected by the atmosphere in other chambers by making the pressure near the evaporation component 20 in the first chamber 11 higher than the pressure at the membrane gap, or the pressure in the first chamber 11 is in a positive pressure state relative to the second chamber 12.

[0073] The metal main layer in this embodiment includes a first metal layer 72 and a second metal layer 73. In step S12, the steps of depositing the metal main layer on two opposite sides of the substrate layer 71 along its thickness direction by using a thermal evaporation process by the evaporation assembly 20 include:

[0074] Step S121 : transferring the substrate layer 71 to the first cold roller 211 , and performing vapor deposition on one side of the substrate layer 71 along its thickness direction by the first vapor deposition device 212 to obtain a first metal layer 72 .

[0075] Step S122 : transferring the substrate layer 71 from the first cold roller 211 to the second cold roller 221 , so as to obtain a second metal layer 73 by vapor deposition on the other side of the substrate layer 71 along its thickness direction through the second vapor deposition device 222 .

[0076] In the first chamber 11 of the vacuum coating equipment, this embodiment can sequentially unwind the substrate layer 71 to the first evaporator 212 and the second evaporator 222 through the above-mentioned steps S121 to S122, so that the first metal layer 72 is evaporated on one surface of the substrate layer 71 by the first evaporator 212, and the second metal layer 73 is evaporated on the other side of the substrate layer 71 by the second evaporator 222, thereby efficiently achieving double-sided coating of the substrate layer 71. Moreover, since the gas in the second chamber 12 is not easy to enter the first chamber 11 and adversely affect the evaporated coating of the first evaporator 212 and the second evaporator 222, the film formation quality of the first metal layer 72 and the second metal layer 73 is guaranteed. It should be noted that in this embodiment, whether there are roller systems with other positions or other functions (such as cooling roller systems) or existing roller systems can be increased or decreased according to actual conditions, and this solution does not make a sole limitation on this.

[0077] In step S12, the step of depositing an isolation layer 74 on the surface of the metal main layer away from the substrate layer 71 using a magnetron sputtering process by the magnetron sputtering assembly 30 includes: transferring the substrate layer 71 from the second cold roller 221 along the transmembrane slit 121 to the third cold roller 31 in the second chamber 12, thereby depositing the isolation layer 74 on the surface of one of the first metal layer 72 and the second metal layer 73 away from the substrate layer 71 by the magnetron sputtering device 32. Thus, in this embodiment, the isolation layer 74 is deposited on a single surface of the substrate layer 71 by transferring the substrate layer 71 from the first or second cold rollers in the first chamber 11 to the third cold roller 31 in the second chamber 12 along the transmembrane slit 121. This isolation layer 74 can isolate the first metal layer 72 and the second metal layer 73, thereby preventing the first metal layer 72 and the second metal layer 73 from adhering to each other after the conductive film 70 is wound and unwound, thereby improving the quality of the finished conductive film 70.

[0078] In a preferred embodiment of the present invention, the isolation layer 74 comprises a metal oxide layer. In some embodiments of the present invention, to ensure that the isolation layer 74 does not affect the conductivity of downstream products (such as battery electrodes) prepared based on the conductive film 70, the isolation layer 74 can be removed before the conductive film 70 is electroplated and thickened. Although the isolation layer 74 in this embodiment can also include a metal isolation layer or an alloy metal isolation layer whose material is different from the first metal layer 72 and the second metal, the metal oxide layer is more easily dissolved and removed by an acidic solution than the metal isolation layer or the alloy metal isolation layer. Therefore, the material of the isolation layer 74 can be prevented from remaining on the conductive film 70, thereby improving the production quality of the subsequent processes of the conductive film 70. Therefore, the most preferred deposited film layer of the isolation layer 74 is a copper oxide film layer, which will not contaminate the electroplating solution even after dissolution.

[0079] In step S12, the step of depositing the isolation layer 74 on the surface of the metal main layer away from the substrate layer 71 using the magnetron sputtering process by the magnetron sputtering assembly 30 further includes: sputtering metal oxide particles from a metal oxide target by the magnetron sputtering assembly 30, so that the metal oxide particles are deposited on the surface of the metal main layer to form a metal oxide layer. Because this embodiment forms a metal oxide layer on the surface of the metal main layer (such as the first metal layer 72 or the second metal layer 73) based on the metal oxide particles sputtered from the metal oxide target, during this process, there is no need to supply oxygen to the magnetron sputtering assembly 30, and the metal oxide layer can be deposited in an argon environment (an oxygen-free environment). In this embodiment, the metal oxide layer is plated in an oxygen-free environment, which can avoid the situation in which the oxygen present when the metal oxide layer is plated leaks from the second chamber 12 to the first chamber 11 in the conventional metal target + (argon Ar + oxygen O2) mode of the magnetron sputtering assembly 30, affecting the operation of the evaporation assembly 20, thereby avoiding the entry of oxygen into the first chamber 11, causing difficulty in thermal evaporation when the evaporation assembly 20 in the first chamber 11 evaporates the metal main layer (such as a copper layer), thereby reducing the film forming quality of the metal main layer. This is because the higher the vacuum degree in the first chamber 11, the better the thermal evaporation efficiency and effect of the evaporation assembly 20. In this embodiment, the metal oxide target is used to plate the metal oxide layer, which can avoid the presence of oxygen in the first chamber 11, thereby avoiding the obvious copper sputtering problem caused by the presence of oxygen in the evaporation process of the copper layer. The occurrence of the copper sputtering phenomenon is equivalent to the addition of copper oxide impurities into the original copper layer, causing unstable evaporation of the evaporation source and reducing the film forming quality of the copper layer.

[0080] Of course, this embodiment can also deposit a metal film layer on the surface of the metal main layer by magnetron sputtering deposition, and can also deposit a metal oxide film layer, wherein the metal oxide film layer can be directly deposited by a metal oxide target in an Ar atmosphere environment, or can be oxidized and deposited by a metal target in an Ar+O2 atmosphere environment. In order to absolutely eliminate the influence of the O2 atmosphere environment in the magnetron sputtering section, it is preferred to deposit metals that are not the main metal layer material or to deposit metal oxides in an oxygen-free atmosphere environment.

[0081] The metal oxide layer in this embodiment may specifically include at least one of a titanium oxide layer, a copper oxide layer, and an aluminum oxide layer. When the corresponding oxide layer is plated in the second chamber 12, a metal oxide ceramic target material of the corresponding oxide layer is specifically used to achieve the plating of the corresponding oxide layer in an oxygen-free environment, thereby avoiding the difficulty of thermal evaporation of the evaporation component 20 in the first chamber 11 due to the presence of oxygen in the second chamber 12.

[0082] In a preferred embodiment of the present invention, the metal oxide layer includes a copper oxide layer. In step S12, the step of plating the isolation layer 74 on the surface of the metal main layer away from the substrate layer 71 by the magnetron sputtering assembly 30 using a magnetron sputtering process further includes: sputtering copper oxide particles from the copper oxide target by the magnetron sputtering assembly 30 using a magnetron sputtering process, so that the copper oxide particles are deposited on the surface of the metal main layer to form a copper oxide layer. Therefore, before the conductive film 70 in this embodiment enters the electroplating thickening process, if the isolation layer 74 needs to be removed, the copper oxide layer is easily dissolved and removed by the acidic solution, thereby preventing the copper oxide layer from remaining on the conductive film 70. When the copper oxide layer is not completely removed or does not need to be removed from the conductive film 70, during the electroplating thickening stage (specifically, when a thick copper layer is electroplated on the conductive film 70), the copper oxide is dissolved by the electroplating solution and does not introduce impurities into the electroplating solution, thereby not affecting the film quality of the electroplated thickening layer (copper layer).

[0083] In step S12, after the isolation layer 74 is plated on the surface of the metal main layer away from the substrate layer 71, the method provided in this embodiment further includes removing the isolation layer 74 before the wound conductive film 70 is subjected to an electroplating process for thickening. In other words, in this embodiment, the isolation layer 74 can be cleaned and removed before the metal thickening layer is plated on the surface of the conductive film 70, thereby preventing the isolation layer 74 from reducing the conductivity of the finished conductive film 70.

[0084] During the step of removing the isolation layer 74, the conductive film 70 can be unwound into a removal device, which includes an etching solution tank. The etching solution tank can contain an etching solution for etching and removing the isolation layer 74. In actual operation, the isolation layer 74 is brought into contact with the etching solution to etch away the isolation layer 74. The etching solution includes an acidic solution or an alkaline solution. The acidic etching solution can be, for example, nitric acid or sulfuric acid, and the alkaline etching solution can be, for example, a sodium hydroxide solution. For example, when the isolation layer 74 in this embodiment includes an aluminum layer having a different material from the main metal layer, the isolation layer 74 can be removed using an alkaline solution. When the isolation layer 74 is a boron trioxide layer, a zinc layer, or a tin layer, the boron trioxide layer, the zinc layer, or the tin layer can be removed using an acidic solution. The type of etching solution can be selected based on the chemical properties of the isolation layer 74.

[0085] When the isolation layer 74 in this embodiment is preferably a metal oxide layer, the metal oxide layer can react with acid to produce salt and water. In other words, the metal oxide layer can be removed by etching with an acidic solution. Therefore, in this embodiment, an acidic solution for etching and removing the isolation layer 74 can be placed in the etching tank. In actual operation, the metal oxide layer can be etched away by contacting the acidic solution in the etching tank.

[0086] In order to improve the vacuuming efficiency of the first chamber 11 and ensure that the evaporation assembly 20 in the first chamber 11 always performs efficient and high-quality plating of the metal main layer under high vacuum, when the unwinding assembly 40 is installed in the second chamber 12, the method provided in this embodiment further includes the following steps:

[0087] The substrate layer 71 is passed through the unwinding assembly 40 located in the second chamber 12 into the first chamber 11 along the transmembrane gap 121 , and after the metal main layer is plated on the substrate layer 71 , it is passed through the transmembrane gap 121 again into the magnetron sputtering assembly 30 in the second chamber 12 .

[0088] That is, the transmembrane slit 121 through which the substrate layer 71 unwound by the unwinding assembly 40 passes when entering the first chamber 11 from the second chamber 12 is the same transmembrane slit 121 through which the substrate layer 71 passes when passing back to the second chamber 12 after being plated with the metal main layer in the first chamber 11. Therefore, there is no need to open an additional transmembrane slit 121 between the second chamber 12 and the first chamber 11 to increase the risk of gas leakage into the first chamber 11, thereby ensuring the evaporation efficiency and evaporation effect of the evaporation assembly 20 in the first chamber 11. Moreover, in this embodiment, when the unwinding assembly 40 is preferably installed in the second chamber 12, the spatial volume of the first chamber 11 can also be reduced, thereby improving the vacuuming efficiency of the vacuum pump when performing a vacuuming operation on the first chamber 11, thereby ensuring a high vacuum degree in the first chamber 11.

[0089] In addition, the method provided in this embodiment further includes the following steps:

[0090] When the winding assembly 50 for winding the substrate layer 71 is located outside the second chamber 12, the conductive film 70 coated with the isolation layer 74 is passed along the transmembrane slit 121 to the winding assembly 50 located outside the second chamber 12. That is to say, after the substrate layer 71 in this embodiment is passed from the first chamber 11 along the transmembrane slit 121 into the second chamber 12 and coated with the isolation layer 74, it will be passed along the transmembrane slit 121 again to the winding assembly 50 outside the second chamber 12 (such as one of the first chamber 11, the third chamber 13, and the fourth chamber 14) to be wound up by the winding assembly 50. Therefore, there is no need to open other slits on the side wall of the first chamber 11 to transfer the conductive film 70 to the outside of the second chamber 12, which can reduce the risk of gas in the second chamber 12 leaking into the first chamber 11.

[0091] See Figure 6 The third embodiment of the present invention provides a conductive film 70, which is prepared by the vacuum coating equipment provided by the first embodiment of the present invention, or the conductive film 70 is prepared by the conductive film preparation method provided by the second embodiment of the present invention. The conductive film 70 in this embodiment includes a substrate layer 71, a first metal layer 72, a second metal layer 73 and an isolation layer 74. Along the first direction (such as Figure 6 The substrate layer 71 includes a first surface 711 and a second surface 712 (the direction indicated by the arrow X shown, i.e., the thickness direction of the substrate layer 71). The first metal layer 72 is disposed on the first surface 711. The second metal layer 73 is disposed on the second surface 712. The isolation layer 74 is disposed on the surface of the first and second metal layers 72, 73 away from the substrate layer 71. The isolation layer 74 includes a metal oxide layer. If it is necessary to remove the isolation layer 74 before the conductive film 70 enters the electroplating thickening process, the metal oxide layer can be easily removed by the acidic solution, so it will not affect the conductive properties of the finished conductive film 70.

[0092] The metal oxide layer in this embodiment includes at least one of a titanium oxide layer, a copper oxide layer, and an aluminum oxide layer. The metal oxide layer in this embodiment is preferably a copper oxide layer. This is because the copper ions dissolved from the copper oxide layer during acid washing in the electroplating tank do not affect the electroplating solution in the electroplating tank, thereby preventing the electroplated copper layer from being doped with impurities and affecting the film quality of the copper layer, thereby improving electroplating efficiency and quality.

[0093] Along the first direction, the thickness of the metal oxide layer in this embodiment is between 0.5 nm and 10 nm. The thickness of the metal oxide layer may specifically include one of 0.5nm, 0.6nm, 0.7nm, 0.8nm, 0.9nm, 1nm, 1.2nm, 1.5nm, 1.7nm, 1.8nm, 2nm, 2.1nm, 2.3nm, 2.5nm, 2.7nm, 2.9nm, 3nm, 3.2nm, 3.5nm, 3.8nm, 4nm, 4.2nm, 4.3nm, 4.7nm, 5nm, 5.1nm, 5.4nm, 5.6nm, 5.8nm, 6nm, 6.1nm, 6.3nm, 6.5nm, 6.8nm, 7nm, 7.2nm, 7.4nm, 7.6nm, 7.7nm, 8nm, 8.2nm, 8.4nm, 8.6nm, 8.7nm, 9nm, 9.2nm, 9.4nm, 9.6nm, 9.8nm, 10nm, etc. When the thickness of the metal oxide layer in this embodiment is within the aforementioned range, it not only ensures that the metal main layers on opposite sides of the conductive film 70 do not adhere to each other, but also ensures that the metal oxide layer, if it remains in the finished conductive film 70, does not affect the conductive properties of the finished conductive film 70. When the metal oxide layer needs to be removed by etching with an etching solution, it will not be difficult to remove it completely due to the excessive thickness of the metal oxide layer.

[0094] The conductive film 70 in this embodiment may also include an adhesion-enhancing layer 75, which is disposed between the metal main layer and the substrate layer 71. Specifically, an adhesion-enhancing layer 75 is disposed between the first metal layer 72 and the substrate layer 71, and between the second metal layer 73 and the substrate layer 71. The adhesion-enhancing layer 75 can improve the adhesion of the first metal layer 72 and the second metal layer 73 to the substrate layer 71, that is, it enhances the interfacial bonding force F1 between the metal layer and the substrate layer 71, making the interfacial bonding force F1 between the metal layer and the substrate layer 71 greater than the bonding force F2 between the first metal layer 72 and the second metal layer 73, thereby preventing the film layer on one side of the conductive film 70 from being pulled off by the other side. In addition, the first metal layer 72 and the second metal layer 73 are separated by the isolation layer 74, which greatly weakens the bonding force F2, making the adhesion between the first metal layer 72 and the second metal layer 73 smaller during the winding process of the conductive film 70, thereby preventing the first metal layer 72 and the second metal layer 73 from sticking to each other.

[0095] The adhesion enhancing layer 75 in this embodiment may include any one of a copper alloy layer, a nickel alloy layer, a titanium alloy layer, an aluminum alloy layer, an aluminum oxide layer, a silicon nitride layer, a silicon carbide layer, a polyethylene glycol layer, and the like.

[0096] In addition, when the isolation layer 74 in this embodiment is preferably a metal oxide layer, a metal isolation layer or a metal alloy isolation layer whose relative material is different from the metal main layer has a better anti-sticking effect between the metal main layers on the opposite sides of the conductive film 70.

[0097] In this embodiment, any isolation material of the isolation layer 74 different from the metal main layer can play an isolation effect. For example, compared with no isolation layer 74, that is, no magnetron sputtering coating layer in this technical solution, on the conductive film 70 without the isolation layer 74, 100 cm 2 The number of light-transmitting points within the area may reach 500. After a certain thickness of isolation layer 74 is applied on the conductive film 70, the number of light-transmitting points within the area (e.g. 100 cm 2 The number of translucent points within the area may be in the single digit or close to zero.

[0098] In this embodiment, metal oxides are preferred because they are easily removed by pickling during acid plating. Therefore, from a compositional perspective, metal oxides do not affect the thickness of the electroplating agent (a separate pickling tank can be used before formal plating). Furthermore, when copper oxide is preferred for the isolation layer 74, the conductive film 70 coated with copper oxide can be directly transferred into the acid plating agent. The acid in the acid plating agent can directly corrode the copper oxide, and even if the copper ions formed enter the electroplating agent, they will not negatively affect the electroplating effect.

[0099] The fourth embodiment of the present invention provides a pole piece, which includes a current collector, which includes the conductive film 70 provided in the third embodiment of the present invention. The structure of the conductive film 70 is described in detail in the third embodiment of the present invention, and will not be further described in this embodiment.

[0100] The fifth embodiment of the present invention provides an energy storage device, which includes a battery, a battery pack, etc. The energy storage device includes the pole piece provided by the fourth embodiment of the present invention.

[0101] For ease of description, spatially relative terms such as "above", "above", "on the upper surface of", "above", etc. may be used herein to describe the spatial positional relationship of a device or feature to other devices or features as shown in the figures. It should be understood that spatially relative terms are intended to include different orientations of the device in use or operation in addition to the orientation described in the figures. For example, if the device in the drawings is inverted, the device described as "above other devices or structures" or "above other devices or structures" will be positioned as "below other devices or structures" or "below other devices or structures". Thus, the exemplary term "above" can include both "above" and "below". The device can also be positioned in other different ways (rotated 90 degrees or in other orientations), and the spatially relative descriptions used here are interpreted accordingly.

[0102] In addition, it should be noted that the use of terms such as "first" and "second" to limit components is only for the convenience of distinguishing the corresponding components. Unless otherwise stated, the above terms have no special meaning and therefore cannot be understood as limiting the scope of protection of this application.

[0103] The above are merely preferred embodiments of the present application and are not intended to limit the present application. Those skilled in the art will readily appreciate that various modifications and variations are possible. Any modifications, equivalent substitutions, or improvements made within the spirit and principles of the present application shall be included within the scope of protection of the present application.

Claims

1. A vacuum coating device, characterized in that: include: A device body (10) is provided with a vacuum chamber in the device body (10), the vacuum chamber comprising a first chamber (11) and a second chamber (12) which are separated from each other, a transmembrane slit (121) being provided on a side wall between the first chamber (11) and the second chamber (12), the transmembrane slit (121) communicating with the first chamber (11) and the second chamber (12); an evaporation assembly (20), the evaporation assembly (20) being installed in the first chamber (11), the evaporation assembly (20) being used for at least coating a metal main layer on two opposite sides of the conductive film (70); A magnetron sputtering assembly (30) is installed in the second chamber (12), and the magnetron sputtering assembly (30) is used to plate an isolation layer (74) on the surface of the metal main layer on one side of the conductive film (70).

2. The vacuum coating equipment according to claim 1, characterized in that: The evaporation assembly (20) comprises: A first evaporation component (21), the first evaporation component (21) comprising a first cold roller (211) and a first evaporator (212), the first evaporator (212) being located on one side of the first cold roller (211) along its own radial direction; The second evaporation component (22) includes a second cold roller (221) and a second evaporator (222), and the second evaporator (222) is located on one side of the second cold roller (221) along its own radial direction.

3. The vacuum coating equipment according to claim 1 or 2, characterized in that: The magnetron sputtering assembly (30) comprises: a third cold roller (31), the third cold roller (31) being installed in the second compartment (12); A magnetron sputtering device (32) is provided on one side of the third cold roller (31) along its own radial direction.

4. The vacuum coating equipment according to claim 1, characterized in that: The transmembrane slit (121) includes a first transmembrane slit and a second transmembrane slit, and the vacuum chamber further includes: A third chamber (13), wherein the third chamber (13) is arranged between the first chamber (11) and the second chamber (12), the first transmembrane slit is arranged on the side wall of the third chamber (13) close to the second chamber (12) and is communicated with the second chamber (12), and the second transmembrane slit is arranged on the side wall of the third chamber (13) away from the second chamber (12) and is communicated with the first chamber (11).

5. The vacuum coating equipment according to claim 4, characterized in that: The volume of the second chamber (12) is smaller than that of the third chamber (13), and the second chamber (12) is located inside the third chamber (13).

6. The vacuum coating equipment according to claim 4, characterized in that: The volume of the second chamber (12) is greater than that of the third chamber (13), and the third chamber (13) is arranged on the outer side wall of the second chamber (12).

7. The vacuum coating equipment according to claim 6, characterized in that: The volume of the second chamber (12) and the volume of the third chamber (13) are both smaller than the volume of the first chamber (11), and the second chamber (12) and the third chamber (13) are both located in the first chamber (11) and spaced apart from the evaporation assembly (20).

8. The vacuum coating equipment according to claim 7, characterized in that: The transmembrane slit (121) further includes a third transmembrane slit, and the vacuum chamber further includes: A fourth chamber (14), the fourth chamber (14) is arranged adjacent to the first chamber (11), the third transmembrane slit is arranged on the side wall of the fourth chamber (14) close to the first chamber (11) and is connected to the first chamber (11), the volume of the second chamber (12) and the volume of the third chamber (13) are both smaller than the volume of the fourth chamber (14), the second chamber (12) and the third chamber (13) are both located in the fourth chamber (14), and the second transmembrane slit is connected to the fourth chamber (14).

9. The vacuum coating equipment according to any one of claims 1 to 2 or 4 to 8, characterized in that: Also includes: an unwinding assembly (40), the unwinding assembly (40) being installed in the first compartment (11) or the second compartment (12); and / or, A winding assembly (50), wherein the winding assembly (50) is installed in the second chamber (12), or the winding assembly (50) is installed in the vacuum chamber but is misplaced in the second chamber (12).

10. A conductive film, characterized in that: The conductive film (70) is prepared by the vacuum coating equipment according to any one of claims 1 to 9, and the conductive film (70) comprises: A substrate layer (71), along a first direction, the substrate layer (71) includes a first surface (711) and a second surface (712); a first metal layer (72), the first metal layer (72) being disposed on the first surface (711); a second metal layer (73), the second metal layer (73) being disposed on the second surface (712); An isolation layer (74) is provided on surfaces of the first metal layer (72) and the second metal layer (73) away from the substrate layer (71), and the isolation layer (74) comprises a metal oxide layer.

11. A pole piece, characterized in that: The pole piece includes a current collector, and the current collector includes the conductive film (70) according to claim 10.

Images