Electrostatic chuck, lower electrode assembly and plasma processing device

Abstract

The utility model discloses an electrostatic chuck, a lower electrode assembly and a plasma processing device. The electrostatic chuck comprises a base layer, a middle bonding layer and a ceramic layer which are sequentially arranged from bottom to top, a protection ring is arranged on the side wall of the middle bonding layer in a surrounding mode and used for protecting the middle bonding layer, and a corrosion-resistant layer is arranged between the protection ring and the side wall of the middle bonding layer and used for protecting the middle bonding layer. And the corrosion-resistant layer completely covers the side wall of the middle bonding layer. According to the electrostatic chuck, the corrosion-resistant layer and the protection ring are arranged outside the side wall of the middle bonding layer, at least double protection is formed, and after long-term service, even if the corrosion resistance of the protection ring is reduced or fails, the corrosion-resistant layer can fully protect the middle bonding layer, so that the service life of the electrostatic chuck is prolonged. Corrosive gas, especially plasma, is prevented from being in direct contact with the middle bonding layer, so that corrosion is avoided, the service life of the electrostatic chuck is effectively prolonged, and the overall efficiency and the product quality of semiconductor manufacturing are improved.

Description

Technical Field

[0001] The utility model belongs to the field of semiconductor workpiece processing, and in particular relates to an electrostatic chuck, a lower electrode assembly and a plasma processing device. Background Art

[0002] In semiconductor manufacturing, etching is a critical step in achieving micron- and even nanometer-scale fine patterns. As a core component of etching equipment, the electrostatic chuck (ESC) uses electrostatic principles to secure the substrate, ensuring stability and precision during the etching process.

[0003] During the etching process, the sidewalls of the electrostatic chuck are exposed to the plasma environment and may be subject to plasma erosion. Therefore, the sidewalls of the electrostatic chuck need to be protected to prevent erosion in the plasma environment, thereby ensuring the chuck's functionality and extending its service life. Currently, sidewall protection for electrostatic chucks mainly relies on polymer glue filling and sealing, as well as protective plates (bands).

[0004] However, with the development of etching processes, etching process parameters are moving towards longer times, higher energies, and higher gas flows to achieve the target etched morphology. This results in a gradual shortening of the service life of the electrostatic chuck, and a subsequent increase in maintenance costs. Analysis of failed electrostatic chucks revealed that even with the aforementioned protection, the sidewalls of the electrostatic chucks can still erode with long-term use. This erosion not only affects the electrostatic chuck's ability to secure the substrate, but can also affect the uniformity of the substrate's temperature, leading to etch offset and particle problems during the etching process.

[0005] With the continuous advancement of semiconductor technology, further improving the performance of electrostatic chucks, enhancing the corrosion resistance of their sidewalls in plasma environments, and extending their service life have become urgent technical issues that need to be addressed. This not only affects production efficiency but also directly impacts the quality and reliability of semiconductor products. Utility Model Content

[0006] The purpose of the utility model is to provide a new electrostatic chuck side wall protection technology, improve the corrosion resistance of the electrostatic chuck side wall in a corrosive environment, especially a plasma environment, improve the performance of the electrostatic chuck, extend its service life, reduce production costs, meet the increasingly stringent etching process requirements, and improve the overall efficiency and product quality of semiconductor manufacturing.

[0007] In order to achieve the above-mentioned purpose, the utility model provides an electrostatic suction cup, comprising: a base layer, an intermediate adhesive layer and a ceramic layer arranged in sequence from bottom to top, a protective ring is arranged around the side wall of the intermediate adhesive layer to protect the intermediate adhesive layer, and a corrosion-resistant layer is arranged between the protective ring and the side wall of the intermediate adhesive layer, and the corrosion-resistant layer completely covers the side wall of the intermediate adhesive layer.

[0008] Optionally, the corrosion-resistant layer includes at least one of a SiC (silicon carbide) layer, a YO (yttrium oxide) layer, and a YOF (yttrium oxyfluoride) layer.

[0009] Optionally, the corrosion-resistant layer is a SiC / C composite layer with an amorphous structure.

[0010] Optionally, the SiC / C composite layer is formed by high-temperature sintering of a SiC precursor.

[0011] Optionally, the roughness of the corrosion-resistant layer is Ra≤1 μm.

[0012] Optionally, the corrosion-resistant layer has a thickness of 10 nm to 10 μm.

[0013] Optionally, it further comprises: a transition layer, wherein the transition layer is arranged between the side wall of the intermediate adhesive layer and the corrosion-resistant layer.

[0014] Optionally, the transition layer comprises at least one of an Al layer, a silicon layer or a ceramic glue.

[0015] Optionally, the thickness of the transition layer is smaller than the thickness of the corrosion-resistant layer.

[0016] Optionally, the protective ring includes: a first protective ring, which is an annular engineering plastic layer.

[0017] Optionally, the protective ring further includes: a second protective ring, which is arranged between the first protective ring and the corrosion-resistant layer, and the expansion coefficient of the second protective ring is greater than or equal to the expansion coefficient of the first protective ring.

[0018] Optionally, the second protective ring is an annular elastic rubber layer.

[0019] Optionally, the intermediate bonding layer further comprises at least one heater for heating the ceramic layer.

[0020] The present invention also provides a lower electrode assembly, comprising:

[0021] base;

[0022] The electrostatic chuck is arranged on the base and is used to fix the substrate.

[0023] The utility model also provides a plasma processing device, comprising a vacuum reaction chamber, wherein an upper electrode assembly is arranged in the vacuum reaction chamber, and the above-mentioned lower electrode assembly is also arranged in the vacuum reaction chamber, wherein the lower electrode assembly is arranged opposite to the upper electrode assembly and can generate a radio frequency electric field under the action of a radio frequency power supply.

[0024] Optionally, the upper electrode assembly includes a gas shower head for delivering process gas into the vacuum reaction chamber.

[0025] Optionally, the plasma processing device includes: a capacitively coupled plasma etching device or an inductively coupled plasma etching device.

[0026] Compared with the prior art, the technical solution of the utility model has at least the following beneficial effects:

[0027] 1) By sequentially placing a corrosion-resistant layer and a protective ring on the outer edge of the electrostatic chuck's intermediate adhesive layer, the intermediate adhesive layer is protected from at least two layers of corrosion, preventing direct contact with corrosive gases, particularly plasma, and thus preventing corrosion. Even if the corrosion resistance of the outermost protective ring on the sidewall degrades or fails after extended service, the inner corrosion-resistant layer can still effectively isolate the corrosive gas. Furthermore, the corrosion-resistant layer itself is highly corrosion-resistant, effectively extending the life of the electrostatic chuck.

[0028] 2) The corrosion-resistant layer prepared using the SiC precursor has an inorganic amorphous structure and has excellent heat resistance, wear resistance and chemical corrosion resistance. It can play a role in strengthening protection, effectively preventing the intermediate adhesive layer from contacting corrosive gases, improving the corrosion resistance of the electrostatic chuck, and extending the service life of the electrostatic chuck.

[0029] 3) Furthermore, a transition layer is formed between the corrosion-resistant layer and the side wall of the intermediate bonding layer, which can improve the bonding strength between the corrosion-resistant layer and the intermediate bonding layer, smooth the expansion coefficient and stress difference between the two, and avoid cracking or falling off of the corrosion-resistant layer that may be caused by long-term use at high temperature.

[0030] 4) Furthermore, the protective ring comprises a first protective ring made of engineering plastic and a second protective ring made of elastic rubber, forming a triple layer of sidewall protection: corrosion-resistant layer, second protective ring, and first protective ring. Optionally, the expansion coefficient of the second protective ring is greater than or equal to that of the first protective ring. Therefore, the second protective ring not only fills the gap created by the first protective ring's high-temperature expansion, preventing the intrusion of corrosive gases, but also exerts outward pressure on the first protective ring, generating sufficient friction to prevent the first protective ring from falling off. BRIEF DESCRIPTION OF THE DRAWINGS

[0031] Figure 1The present invention is a structural schematic diagram of an electrostatic chuck, a lower electrode assembly using the same, and a plasma processing device.

[0032] Figure 2 A partial cross-sectional diagram of an electrostatic chuck.

[0033] Figure 3 This is a partial cross-sectional schematic diagram of an electrostatic chuck side wall protection according to the present invention.

[0034] Figure 4 This is a partial cross-sectional schematic diagram of the electrostatic chuck during the preparation process of the electrostatic chuck in the embodiment, where a represents before sidewall protection is formed, b represents after pre-treatment by grinding and polishing, c represents when a corrosion-resistant layer is formed on the sidewall, d represents after the second protection ring is installed on the sidewall, and e represents after the first protection ring is installed on the sidewall.

[0035] Figure ID:

[0036] Vacuum reaction chamber 100

[0037] Reaction chamber sidewall 101

[0038] Opening 102

[0039] Gas shower head 103

[0040] Gas supply device 104

[0041] Exhaust pump 105

[0042] RF power supply 106

[0043] Matching Network 107

[0044] DC power supply 108

[0045] Electrostatic chuck 210

[0046] Base 211

[0047] Grassroots 21

[0048] Intermediate adhesive layer 22

[0049] Polymer glue layers 221 and 222

[0050] Heater 223

[0051] Recessed structure 224

[0052] Side wall surface 225

[0053] Ceramic layer 23

[0054] Protective ring 31

[0055] First guard ring 311

[0056] Second guard ring 312

[0057] Corrosion-resistant layer 32. DETAILED DESCRIPTION

[0058] The following is a clear and complete description of the technical solution of the present invention in conjunction with the accompanying drawings. Obviously, the embodiments described are only some of the embodiments of the present invention, not all of them. Based on the embodiments of the present invention, all other embodiments obtained by ordinary technicians in this field without making any creative efforts are within the scope of protection of the present invention.

[0059] In the description of this utility model, it should be noted that the terms "upper," "lower," "left," "right," "vertical," "horizontal," "inner," and "outer," etc., indicating orientations or positional relationships, are based on the orientations or positional relationships shown in the accompanying drawings and are intended solely to facilitate the description of this utility model and simplify the description. They do not indicate or imply that the devices or components referred to must have a specific orientation, be constructed, or operate in a specific orientation. Therefore, they should not be construed as limitations on this utility model. Furthermore, the terms "first" and "second" are used for descriptive purposes only and should not be construed as indicating or implying relative importance.

[0060] In the description of this utility model, it should be noted that, unless otherwise expressly specified or limited, the terms "mounted," "connected," and "connected" should be understood in a broad sense. For example, they may refer to fixed connections, detachable connections, or integral connections; they may refer to mechanical connections; they may refer to direct connections, indirect connections through an intermediate medium, or internal communication between two components. Those skilled in the art will understand the specific meanings of these terms in this utility model based on the specific circumstances.

[0061] Figure 1 This is a schematic diagram of the structure of an electrostatic chuck and a lower electrode assembly and a plasma processing device using the electrostatic chuck proposed by the present invention. Figure 1 The plasma processing device shown is a capacitively coupled plasma (CCP) reaction device. The electrostatic chuck proposed in the present invention is also applicable to plasma processing devices such as an inductively coupled plasma reaction device (ICP), an electron cyclotron resonance plasma reaction device (ECR), a remote plasma reaction device (Remote Plasma) and a plasma edge etching device (Bevel Etch).

[0062] Figure 1The capacitively coupled plasma reactor shown is a device that generates plasma within a reaction chamber through capacitive coupling using an RF power source applied to a base for etching. It includes a vacuum reaction chamber 100, which includes a roughly cylindrical reaction chamber sidewall 101 made of metal. An opening 102 is provided in the reaction chamber sidewall 101 for accommodating the entry and exit of substrates. A gas showerhead 103 and a base 211 positioned opposite the gas showerhead 103 are disposed within the reaction chamber. The gas showerhead 103 is connected to a gas supply device 104 for supplying reactant gas to the vacuum reaction chamber. The gas showerhead 103 also serves as the upper electrode of the vacuum reaction chamber. An electrostatic chuck 210 is disposed above the base 211. The base 211 and the electrostatic chuck 210 serve as the lower electrode assembly of the vacuum reaction chamber. A reaction region is formed between the upper and lower electrode assemblies. The electrostatic suction cup 210 is electrically connected to the DC power supply 108 to generate an electrostatic suction force to support and fix the substrate W to be processed during the process. At least one radio frequency power supply 106 is applied to the upper electrode or the lower electrode through the matching network 107 to generate a radio frequency electric field between the upper electrode and the lower electrode to dissociate the reaction gas into plasma. The plasma contains a large number of active particles such as electrons, ions, excited atoms, molecules and free radicals. The above-mentioned active particles can undergo various physical and chemical reactions with the surface of the substrate W to be processed, so that the morphology of the substrate surface changes, that is, the etching process is completed. An exhaust pump 105 is also provided below the vacuum reaction chamber 100 to discharge the reaction by-products from the reaction chamber and maintain the vacuum environment of the reaction chamber. A cooling liquid channel is also provided inside the base 211 to control the temperature of the base 211.

[0063] like Figure 2The figure shows a partial cross-sectional schematic diagram of a side wall of an electrostatic chuck. The electrostatic chuck comprises: a base layer 21, an intermediate adhesive layer 22 and a ceramic layer 23 arranged in sequence from bottom to top, wherein the intermediate adhesive layer 22 comprises at least a polymer glue layer 221 bonded to the bottom surface of the ceramic layer 23, and a polymer glue layer 222 bonded to the top surface of the base layer 21. In some embodiments, the intermediate adhesive layer 22 further comprises a heater 223 for heating the ceramic layer 23. In the working state, the side wall of the electrostatic chuck is exposed to a corrosive gas environment, especially a plasma environment. The corrosive gas described herein refers to a chemical substance that can cause corrosion to the electrostatic chuck, especially the intermediate adhesive layer 22, including gas molecules that are corrosive in themselves and active particles such as plasma formed by radio frequency dissociation. Compared with the base layer 21 and the ceramic layer 23, the polymer glue layer (221, 222) is easily corroded by corrosive gases, especially plasma. In order to prevent the corrosive gas from corroding the side wall of the intermediate adhesive layer 22, a recessed structure 224 is provided at the edge of the intermediate adhesive layer 22. The recessed structure 224 can be filled with sealant and then protected by an annular protective plate. After the annular protective plate is installed, the sealant will not be exposed to the plasma environment and will be separated from the corrosive gas, thereby preventing the ESC side wall sealant from being corroded. However, under long-term service, the protective plate may be corroded and fail, or under high-temperature use, the protective plate may swell and fall off, and the electrostatic chuck side wall sealant may be corroded by corrosive gases or free radicals, causing the filler in the sealant to fall off, thereby causing problems such as wafer particles and metal contamination. At the same time, the erosion of the sealant causes the electrostatic chuck side wall to be directly exposed to the plasma environment, which will cause direct arc discharge to the electrostatic chuck side wall, causing ESC damage and metal contamination problems.

[0064] To this end, the present invention employs a corrosion-resistant layer to fill the recessed structure 224 of the intermediate adhesive layer 22. The corrosion-resistant layer further resists corrosion, preventing corrosive gases from contacting and corroding the intermediate adhesive layer, thereby effectively extending the service life of the electrostatic chuck. This is described below with reference to the accompanying drawings.

[0065] like Figure 3 As shown, the present invention provides an electrostatic chuck comprising: a base layer 21, an intermediate adhesive layer 22, and a ceramic layer 23, arranged in order from bottom to top. A protective ring 31 surrounds the sidewalls of the intermediate adhesive layer 22 to protect it. A corrosion-resistant layer 32 is disposed between the protective ring 31 and the sidewalls of the intermediate adhesive layer 22, completely covering the sidewalls of the intermediate adhesive layer 22. When the electrostatic chuck is in service for a long time and the protective effect of the protective ring is reduced or even fails, corrosive gases that invade the protective ring 31 are further blocked by the corrosion-resistant layer 32, thereby preventing the corrosive gases from eroding the intermediate adhesive layer 22 and effectively extending the service life of the electrostatic chuck.

[0066] The corrosion-resistant layer 32 includes at least one of a SiC (silicon carbide) layer, a YO (yttrium oxide) layer, and a YOF (yttrium oxyfluoride) layer.

[0067] In some embodiments, the corrosion-resistant layer 32 is a SiC / C composite layer having an amorphous structure. The SiC / C composite layer can be formed by high-temperature sintering of a SiC precursor. The SiC precursor can be a low-temperature liquid carbosilane.

[0068] When the roughness of the corrosion-resistant layer 32 is small, there are fewer surface defects and the corrosion resistance is stronger. As an example, the roughness of the corrosion-resistant layer 32 is Ra≤1 μm.

[0069] The corrosion-resistant layer 32 and the protective ring 31 together fill the recessed structure 224 of the intermediate adhesive layer 22, so that the outer wall of the protective ring 31 is flush with the outer walls of the base layer 21 and the ceramic layer 23. The thickness of the corrosion-resistant layer 32 is determined by its formation process and / or the thickness of the protective ring 31. Optionally, the thickness of the corrosion-resistant layer 32 is 10 nm to 10 μm.

[0070] In some embodiments, a transition layer may be disposed between the sidewalls of the intermediate adhesive layer 22 and the corrosion-resistant layer 32 to reduce stress at the interface between the sidewalls of the intermediate adhesive layer 22 and the corrosion-resistant layer 32, smooth out the difference in expansion coefficients between the two, and thereby prevent the corrosion-resistant layer 32 from falling off and enhance corrosion resistance. The transition layer may comprise at least one of an aluminum layer, a silicon layer, or a ceramic adhesive. Optionally, the thickness of the transition layer is less than that of the corrosion-resistant layer.

[0071] In some embodiments, the protective ring 31 includes a first protective ring 311, which is an annular engineering plastic layer. The material used for the annular engineering plastic layer includes at least one of Teflon (TEFLON), polyetheretherketone (PEEK), and thermosetting polyimide.

[0072] In some embodiments, a second protective ring 312 is further disposed between the first protective ring 311 and the corrosion-resistant layer 32 to form a triple protection structure consisting of the corrosion-resistant layer, the second protective ring, and the first protective ring. The second protective ring 312 can have a certain degree of elasticity to provide a better seal. As an example, the second protective ring 312 can be an annular elastic rubber layer.

[0073] Engineering plastics usually have poor elasticity or almost no elasticity, low elongation, and a coefficient of expansion significantly greater than that of the material of the ESC body, which results in a gap between the annular engineering plastic layer and the ESC during high temperature, making it easy for corrosive gases to penetrate, and the gap between the annular engineering plastic layer and the ESC may also cause the first protective ring 311 to fall off. To solve this problem, in some embodiments, the coefficient of expansion of the second protective ring 312 is greater than or equal to the coefficient of expansion of the first protective ring 311. Preferably, the thermal expansion coefficient of the second protective ring 312 is 1.5 to 5 times that of the first protective ring 311. As an example, the expansion coefficient of the ESC is 21.6×10 -6 μm / (m*℃), the thermal expansion coefficient of the annular engineering plastic layer (the first protective ring 311) is 50×10 -6 μm / (m*℃)~100×10 -6 μm / (m*℃), the thermal expansion coefficient of the second guard ring 312 is 150×10 -6 μm / (m*℃)~250×10 -6 μm / (m*℃). The second protective ring 312 and the first protective ring 311 are arranged in sequence along the horizontal direction on the side walls of the middle adhesive layer 22 of the electrostatic chuck. The first protective ring 311 has a greater coefficient of expansion than the electrostatic chuck. Under high temperatures, it expands outward relative to the edge of the electrostatic chuck sidewall, forming a gap. The second protective ring 312 located in the middle has the largest coefficient of expansion. During thermal expansion, it not only completely fills the gap to prevent corrosive gases from infiltrating, but also applies outward pressure to the inner wall of the first protective ring 311 outside it. The friction generated by this pressure prevents the first protective ring 311 from loosening and falling.

[0074] The following describes a method for manufacturing an electrostatic chuck provided by the present invention in conjunction with embodiments.

[0075] Example

[0076] like Figure 4As shown in a, an electrostatic suction cup body is provided, which includes: a base layer 21, an intermediate adhesive layer 22 and a ceramic layer 23 arranged in sequence from bottom to top. The intermediate adhesive layer 22 also includes a heater 223, and a polymer glue layer 221 is arranged between the top surface of the heater 223 and the bottom surface of the ceramic layer 23 to play a bonding and adhesive role; a polymer glue layer 222 is arranged between the bottom surface of the heater 223 and the top surface of the base layer 21 to play a bonding and adhesive role. The side wall of the intermediate adhesive layer 22 has a recessed structure 224. Optionally, the side wall surface 225 of the intermediate adhesive layer 22 can be pre-treated first to remove surface impurity particles and reduce surface roughness. A jig can be used to polish the side wall of the heater 223 until the metal layer is mirror-smooth, as shown in FIG. Figure 4 As shown in b, the foreign particles on the sidewall surface 225 are removed.

[0077] The electrostatic chuck body is immersed in a SiC precursor solution to cover and fill the surface of the recessed structure 224 of the intermediate adhesive layer 22 to form a corrosion-resistant layer 32, such as Figure 4 The SiC precursor is a liquid carbosilane with a simple chemical formula of [(CH2RSiH) x (CH2R'SiH) y (CH2R”SiH) z ] n , where R, R' and R" are functional groups, x, y and z represent the ratio of the groups, n is the degree of polymerization, and x, y, z and n are all greater than 0; density 0.94 g / cm 3 The SiC precursor has a complex viscosity of less than 0.1 Pa·s and a number-average molecular weight of 1000 ± 300 g / mol. At low temperatures and even at room temperature, the SiC precursor can maintain a viscosity and fluidity similar to that of water. Upon curing the liquid carbosilane by heating, a corrosion-resistant layer comprising silicon carbide and / or carbon (SiC / C) is formed.

[0078] The second protective ring 312 is mounted on the outside of the corrosion-resistant layer 32. Figure 4 As shown in FIG. d , the second protective ring 312 is an elastic rubber ring. The electrostatic chuck is then placed in an oven for baking, where the SiC precursor is cured to form an inorganic amorphous SiC / C composite film. This SiC / C composite film exhibits greater corrosion resistance than traditional polymer adhesives, effectively preventing direct contact between the electrostatic chuck substrate and the plasma.

[0079] An engineering plastic ring is sleeved and installed on the outer side of the second protection ring 312 as the first protection ring 311 to obtain an electrostatic chuck with side wall protection, such as Figure 4 As shown in FIG. 5 , the outer edge of the first guard ring 311 is flush with the outer edges of the base layer 21 and the ceramic layer 23 of the electrostatic chuck.

[0080] In summary, the utility model provides an electrostatic chuck, in which a corrosion-resistant layer and a protective ring are arranged outside the side wall of the intermediate adhesive layer to form at least double protection. After long-term service, even if the corrosion resistance of the protective ring is reduced or fails, the corrosion-resistant layer can still fully protect the intermediate adhesive layer, avoiding direct contact between corrosive gases, especially plasma, and the intermediate adhesive layer, thereby effectively extending the service life of the electrostatic chuck.

[0081] Although the present invention has been described in detail through the above preferred embodiments, it should be understood that the above description should not be considered as limiting the present invention. After reading the above description, various modifications and alternatives to the present invention will be readily apparent to those skilled in the art. Therefore, the scope of protection of the present invention shall be defined by the appended claims.

Claims

1. An electrostatic chuck comprising: a base layer, an intermediate adhesive layer, and a ceramic layer arranged in sequence from bottom to top, wherein a protective ring is provided around the side wall of the intermediate adhesive layer to protect the intermediate adhesive layer, characterized in that: A corrosion-resistant layer is provided between the protective ring and the side wall of the intermediate adhesive layer, and the corrosion-resistant layer completely covers the side wall of the intermediate adhesive layer.

2. The electrostatic chuck according to claim 1, wherein The corrosion-resistant layer includes at least one of a SiC layer, a YO layer, and a YOF layer.

3. The electrostatic chuck according to claim 2, wherein: The corrosion-resistant layer is a SiC / C composite layer with an amorphous structure.

4. The electrostatic chuck according to claim 3, wherein The SiC / C composite layer is formed by high-temperature sintering of a SiC precursor.

5. The electrostatic chuck according to claim 1, wherein The roughness of the corrosion-resistant layer is Ra≤1 μm.

6. The electrostatic chuck according to claim 1, wherein The thickness of the corrosion-resistant layer is 10 nm to 10 μm.

7. The electrostatic chuck according to claim 1, wherein It also includes a transition layer, which is arranged between the side wall of the intermediate bonding layer and the corrosion-resistant layer.

8. The electrostatic chuck according to claim 7, wherein The transition layer includes at least one of an aluminum layer, a silicon layer or a ceramic glue.

9. The electrostatic chuck according to claim 7, wherein The thickness of the transition layer is smaller than that of the corrosion-resistant layer.

10. The electrostatic chuck according to any one of claims 1 to 9, wherein: The protective ring includes: a first protective ring, which is an annular engineering plastic layer.

11. The electrostatic chuck according to claim 10, wherein The protection ring further includes: a second protection ring, which is arranged between the first protection ring and the corrosion-resistant layer, and the expansion coefficient of the second protection ring is greater than or equal to the expansion coefficient of the first protection ring.

12. The electrostatic chuck according to claim 11, wherein The second protection ring is an annular elastic rubber layer.

13. The electrostatic chuck according to claim 1, wherein The intermediate bonding layer further comprises at least one heater for heating the ceramic layer.

14. A lower electrode assembly, characterized in that: Include: base; The electrostatic chuck according to any one of claims 1 to 13, which is arranged on the base and is used to fix the substrate.

15. A plasma processing device comprising a vacuum reaction chamber, wherein an upper electrode assembly is provided in the vacuum reaction chamber, wherein: The vacuum reaction chamber is further provided with a lower electrode assembly as claimed in claim 14, which is arranged opposite to the upper electrode assembly and can generate a radio frequency electric field under the action of a radio frequency power supply.

16. The plasma processing apparatus according to claim 15, wherein: The upper electrode assembly includes a gas shower head for delivering process gas into the vacuum reaction chamber.

17. The plasma processing apparatus according to claim 15, wherein: The plasma processing device includes: capacitively coupled plasma etching equipment or inductively coupled plasma etching equipment.

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