Double-cavity treatment system

Abstract

The utility model discloses a double-cavity processing system, which comprises two processing cavities used for respectively carrying out process processing on substrates arranged in the processing cavities; the main gas inlet channel is connected with a process gas source, and the gas flow divider assembly is arranged on the main gas inlet channel and used for dividing one path of process gas into four paths of process gas flows and supplying the four paths of process gas flows into the two processing cavities respectively; and the flow adjusting control unit is used for controlling the gas flow divider assembly according to the substrate processing results of the two processing cavities so as to adjust the process gas flow entering the two processing cavities. According to the utility model, the process gas flow in the two processing cavities is adjusted, so that the difference of the etching rate between the two processing cavities is reduced.

Description

Technical Field

[0001] The utility model relates to the technical field of semiconductor processing equipment, in particular to a dual-chamber processing system. Background Art

[0002] Semiconductor manufacturing places extremely high demands on gas flow and pressure control within the processing chamber. Traditional single-chamber processing systems, due to their low production efficiency and limited flexibility, struggle to meet the demands of modern manufacturing. To address these demands, a dual-chamber processing system can be used to perform the process.

[0003] like Figure 1 As shown, it is a typical dual-chamber processing system. Compared with the processing device with a single processing chamber, the two processing chambers (11, 12) can share the gas box (gas supply source) 20, vacuum pump 30 and barometer ( Figure 1 Two wafers W can be processed at the same time, which will greatly increase the processing efficiency; and other aspects, such as the radio frequency system, endpoint detection system, etc., are the same as those of a single processing chamber.

[0004] In practice, it has been found that while dual-chamber processing systems can increase production capacity, the processing results within the two chambers can be inconsistent, a difficult proposition in the integrated circuit industry, which places stringent demands on consistency and repeatability. Existing technologies lack a controllable means to address this problem when the processes within the two chambers exhibit poor consistency. Utility Model Content

[0005] The purpose of the present invention is to provide a dual-chamber processing system to solve the problem of different gas pressures in the two reaction chambers due to inherent problems of the gas outlet of the dual-chamber processing system, which in turn leads to inconsistent etching rates in the two reaction chambers.

[0006] In order to solve the above problems, the present invention is implemented through the following technical solutions:

[0007] A dual-chamber processing system includes: two processing chambers, each for performing process processing on a substrate placed therein; a main air inlet channel connected to a process gas source; a gas splitter assembly, which is arranged on the main air inlet channel and is used to split one process gas into four process gas flows, and supply them to the two processing chambers respectively; a flow adjustment control unit, which is used to control the gas splitter assembly according to the substrate processing results of the two processing chambers to adjust the process gas flows entering the two processing chambers.

[0008] Optionally, the main air inlet channel includes: a main air inlet branch, two central air inlet branches, and two edge air inlet branches. The inlet of the gas splitter assembly is connected to the outlet of the main air inlet branch; and the inlet of the main air inlet branch is connected to the process gas source.

[0009] The two outlets of the gas splitter assembly are respectively connected to the inlets of the two central air inlet branches; the outlets of the two central air inlet branches are used to supply process gases with the same or different gas flow ratios to the central reaction areas of the two processing chambers respectively.

[0010] The other two outlets of the gas diverter assembly are respectively connected to the inlets of the two edge gas inlet branches, and the outlets of the two edge gas inlet branches are used to supply process gases with the same or different gas flow ratios to the edge reaction areas of the two processing chambers respectively.

[0011] Optionally, the gas splitter assembly includes a gas splitter divided into four.

[0012] Optionally, the gas splitter assembly includes three gas splitters divided into two halves, wherein the first gas splitter is disposed at the outlet of the main gas inlet branch, and the inlets of the second and third gas splitters are respectively connected to the two outlets of the first gas splitter; the two outlets of the second gas splitter are respectively connected to the inlets of the two central gas inlet branches; the outlets of the two central gas inlet branches are used to supply process gases having the same or different gas flow ratios to the central reaction regions of the two processing chambers. The two outlets of the third gas splitter are respectively connected to the inlets of the two edge gas inlet branches; the outlets of the two edge gas inlet branches are used to supply process gases having the same or different gas flow ratios to the edge reaction regions of the two processing chambers.

[0013] Optionally, the gas flow rate supplied to the central reaction region is greater than the gas flow rate supplied to the edge reaction region.

[0014] Optionally, the first gas splitter is used to split the flow of the process gas output from the main gas inlet branch according to a first branch flow ratio a and a second branch flow ratio 1-a, to obtain a first process gas flow and a second process gas flow; the second gas splitter is used to split the first process gas flow according to a third branch flow ratio l3 and a fourth branch flow ratio l4, to obtain a first central gas flow and a second central gas flow;

[0015] Where, a=l3+l4;

[0016] The third gas splitter is used to split the second process gas flow according to the fifth branch flow ratio l5 and the sixth branch flow ratio l6 to obtain a first edge gas flow and a second edge gas flow;

[0017] Among them, 1-a=l5+l6.

[0018] Optionally, the difference between the third branch flow ratio l3 and the fourth branch flow ratio l4 is less than 5%; the difference between the fifth branch flow ratio l5 and the sixth branch flow ratio l6 is less than 5%.

[0019] Optionally, the third branch flow rate ratio l3 and the fourth branch flow rate ratio l4 are determined according to an intermediate fine adjustment ratio determined by an etching rate difference between the two processing chambers;

[0020] The fifth branch flow rate ratio l5 and the sixth branch flow rate ratio l6 are determined according to the edge fine adjustment ratio determined by the etching rate difference between the two processing chambers.

[0021] Optionally, the two processing chambers share one gas outlet.

[0022] The utility model has the following technical effects:

[0023] The utility model provides a dual-chamber processing system, which, through the cooperation between the gas flow regulation component and the flow regulation control unit, realizes adjustment / fine-tuning of the process gas flow in the two processing chambers according to the substrate processing results of the two processing chambers, thereby adjusting the matching degree between the two processing chambers, reducing the difference in etching rate between the two processing chambers, and ensuring the consistency of substrate processing in the two processing chambers.

[0024] The utility model can not only divide one process gas into four process gas flows and supply them to the central reaction area or the edge reaction area of the two processing chambers through a one-to-four gas splitter, but also can feedback adjust the flow ratio between the four process gas flows, flexibly adjust the amount of process gas in the two processing chambers, reduce the difference in etching rate between the two processing chambers, and ensure the consistency of substrate processing in the two processing chambers.

[0025] The utility model uses three cascaded one-to-two gas splitters to not only divide one process gas into four process gas flows and supply them to the central reaction area or the edge reaction area of the two processing chambers respectively, but also can feedback adjust the flow ratio between the four process gas flows, flexibly adjust the amount of process gas in the two processing chambers, reduce the difference in etching rate between the two processing chambers, and ensure the consistency of substrate processing in the two processing chambers.

[0026] As is well known, there are many ways to adjust the etching rate of the substrate, such as using parameters such as power and gas pressure in the etching formula to reduce the difference in etching rates between the two processing chambers. The adjustment process for the above parameters is complicated and not easy to implement. The utility model can reduce the difference in etching rates between the two processing chambers by keeping the total flow rate of the process gas unchanged and only changing the flow rate of the process gas distributed to the two processing chambers. This indirectly solves the problem of different gas pressures in the two processing chambers due to the inherent problem of the gas outlet of the dual-chamber processing system, which in turn leads to inconsistent etching rates in the two processing chambers. The adjustment method of the utility model is simple and easy to implement, the adjustment method is flexible, and the adjustment cost is low. BRIEF DESCRIPTION OF THE DRAWINGS

[0027] Figure 1 A schematic diagram of the structure of a dual-chamber processing system provided by the prior art;

[0028] Figure 2 For the Figure 1 Schematic diagram of the structure of the air outlet along the AA direction;

[0029] Figure 3 A schematic structural diagram of a dual-chamber processing system provided in one embodiment of the present invention;

[0030] Figure 4 A schematic structural diagram of a dual-chamber processing system provided by another embodiment of the present invention;

[0031] Figure 5 A schematic diagram of the effect of the adjusted etching rates in two processing chambers provided in one embodiment of the present invention. DETAILED DESCRIPTION

[0032] The following is a further detailed description of a dual-chamber processing system proposed by the present invention in conjunction with the accompanying drawings and specific implementation methods. According to the following description, the advantages and features of the present invention will be clearer. It should be noted that the drawings are in a very simplified form and use non-precise proportions, which are only used to conveniently and clearly assist in explaining the purpose of the implementation method of the present invention. In order to make the purpose, features and advantages of the present invention more obvious and easy to understand, please refer to the accompanying drawings. It should be noted that the structure, proportion, size, etc. illustrated in the drawings of this specification are only used to match the content disclosed in the specification for people familiar with this technology to understand and read, and are not used to limit the implementation conditions of the present invention, so they have no technical substantive significance. Any structural modification, change in proportional relationship or adjustment of size, without affecting the efficacy and purpose that can be achieved by the present invention, should still fall within the scope of the technical content disclosed by the present invention.

[0033] Faced with the inconsistency problem of the dual-chamber processing system, the inventor of this patent analyzed that it might be caused by the two processing chambers sharing a vacuum pump. Since the two processing chambers share a gas outlet, the gas outlet includes a gas pump (the cross section of the gas pump is circular and is located at Figure 2 The left air outlet 31 on the left side of the dotted line and the Figure 2 The ideal opening of the right air outlet 32 on the right side of the middle dotted line is to keep the area or size of the opening the same in real time) and the pendulum valve 33. Since the pendulum valve 33 rotates clockwise or counterclockwise, the two openings of the air outlets (31, 32) of the two cavities are not the same. Therefore, the air outlets (31, 32) are not symmetrical relative to the two processing chambers.

[0034] Because the dual-chamber processing system's gas outlets are asymmetrical, the reaction chamber with the larger pumping port opening will pump out faster under the same intake flow conditions. The pressure ratio between the two chambers in a dual-chamber design can be measured for the same intake rate and the same swing valve opening. Ideally, this ratio is 1, indicating equal pressures in both chambers. However, the maximum measured pressure difference has been as high as 7% (1-0.93=0.07), a significant pressure difference that is unacceptable for cutting-edge chip processing tools. Furthermore, under different recipe conditions, the measured pressure difference between the two chambers in a dual-chamber processing system can vary, leading to different etch rates in the two chambers. Process results show that the etch rate mismatch caused by this asymmetry is less than 5%, typically between 2% and 3%. However, such a degree of etch rate mismatch between the two processing chambers is unacceptable in the integrated circuit industry, which demands stringent consistency and repeatability, and can also affect substrate or wafer yield. To solve the above problem, the prior art attempts to make the gas extraction ports symmetrical, but this problem is still not solved. Therefore, a fine adjustment method is needed to achieve the purpose of finely adjusting the etching rate by finely adjusting the process gas.

[0035] In addition to the above reasons, there may be other reasons that lead to inconsistent processing results in the two reaction chambers.

[0036] A dual-chamber processing system includes: two processing chambers, each for performing process processing on a substrate placed therein; a main air inlet channel connected to a process gas source; a gas splitter assembly, which is arranged on the main air inlet channel and is used to split one process gas into four process gas flows, and supply them to the two processing chambers respectively; a flow adjustment control unit, which is used to control the gas splitter assembly according to the substrate processing results of the two processing chambers to adjust the process gas flows entering the two processing chambers.

[0037] The utility model provides a dual-chamber processing system, which, through the cooperation between the gas flow regulating component and the flow regulating control unit, realizes adjustment / fine-tuning of the process gas flow in the two processing chambers according to the substrate processing results of the two processing chambers, thereby achieving the matching degree between the two processing chambers, reducing the difference in etching rate between the two processing chambers, and ensuring the consistency of substrate processing in the two processing chambers.

[0038] It is understandable that the flow adjustment control unit is, for example, a computer controller, which will have a graphical user interface (GUI) that can set the parameter settings of the gas flow adjustment component according to the differences in substrate processing in the two processing chambers, so that the process processing in the two reaction chambers is consistent after gas flow compensation.

[0039] It is understood that the two processing chambers can be any type of process chambers used for substrate processing, such as an etching chamber, a deposition chamber, etc. In some embodiments, the two processing chambers are configured to perform the same function. For example, the two processing chambers are etching chambers, and each process chamber can include a plasma source, such as an inductively or capacitively coupled plasma source, a remote plasma source, etc.

[0040] Example 1

[0041] In this embodiment, if Figure 3 As shown, when the gas flow regulating assembly includes a one-to-four gas splitter 400, the dual-chamber processing system provided in this embodiment includes: two processing chambers (a first processing chamber 101 and a second processing chamber 102), each of which is provided with a susceptor (201, 202) for supporting a substrate W, and the two processing chambers are respectively used to process the substrates W placed therein. The main gas inlet channel 31 is connected to a process gas source 103 and is used to transport the process gas from the process gas source 103 to the two processing chambers.

[0042] The main air inlet channel 31 includes: a main air inlet branch 301, two central air inlet branches (311, 312) and two edge air inlet branches (321, 322). The inlet of the gas splitter 400 is connected to the outlet of the main air inlet branch 301; the inlet of the main air inlet branch 301 is connected to the process gas source 103. The two outlets of the gas splitter 400 are respectively connected to the inlets of the two central air inlet branches (311, 312); the outlets of the two central air inlet branches (311, 312) are used to supply process gases with the same or different gas flow ratios to the corresponding central reaction areas of the processing chambers (101, 102).

[0043] The other two outlets of the gas diverter 400 are respectively connected to the inlets of the two edge gas inlet branches (321, 322), and the outlets of the two edge gas inlet branches (321, 322) are used to supply process gases with the same or different gas flow ratios to the corresponding edge reaction areas of the processing chambers (101, 102).

[0044] This embodiment uses a one-to-four gas splitter to not only split one process gas into four process gas flows and supply them to the central reaction area or edge reaction area of the two processing chambers respectively, but also can adjust the flow ratio between the four process gas flows based on the processing results of the two processing chambers, flexibly adjust the amount of process gas in the two processing chambers, reduce the difference in etching rate between the two processing chambers, and ensure the consistency of substrate processing in the two processing chambers.

[0045] Example 2

[0046] In this embodiment, if Figure 4 As shown, when the gas flow regulating assembly includes three gas flow dividers (a first gas flow divider 401, a second gas flow divider 402, and a third gas flow divider 403) that divide into two, a dual-chamber processing system in this embodiment includes: two processing chambers (a first processing chamber 101 and a second processing chamber 102), each of the two processing chambers being provided with a susceptor (201, 202) for supporting a substrate W, and the two processing chambers being used to process the substrates W placed therein. A main gas inlet channel 31 is connected to a process gas source 103 and is used to transport process gas from the process gas source 103 to the two processing chambers.

[0047] The main air intake channel 31 includes: a main air intake branch 301, two central air intake branches (311, 312) and two edge air intake branches (321, 322).

[0048] Wherein, the first gas diverter 401 is arranged at the outlet of the main gas inlet branch 301. The inlets of the second gas diverter 402 and the third gas diverter 403 are respectively connected to the two outlets of the first gas diverter 401. The two outlets of the second gas diverter 402 are respectively connected to the inlets of the two central gas inlet branches (311, 312). The outlets of the two central gas inlet branches (311, 312) are used to supply process gases with the same or different gas flow ratios to the central reaction areas of the corresponding processing chambers (101, 102). The two outlets of the third gas diverter 403 are respectively connected to the inlets of the two edge gas inlet branches (321, 322). The outlets of the two edge gas inlet branches (321, 322) are used to supply process gases with the same or different gas flow ratios to the edge reaction areas of the corresponding processing chambers (101, 102).

[0049] In this embodiment, the first gas splitter 401 is used to split the flow of the process gas output from the main air inlet branch 301 according to a first branch flow ratio a and a second branch flow ratio 1-a to obtain a first process gas flow and a second process gas flow.

[0050] The second gas splitter 402 is used to split the first process gas flow according to the third branch flow ratio l3 and the fourth branch flow ratio l4 to obtain a first central gas flow and a second central gas flow.

[0051] Among them, a=l3+l4.

[0052] The first central gas flow passes through the first central gas inlet branch 311 and enters the central reaction area of the first processing chamber 101 ; the second central gas flow passes through the second central gas inlet branch 312 and enters the central reaction area of the second processing chamber 102 .

[0053] The third gas splitter 403 is used to split the second process gas flow according to the fifth branch flow ratio l5 and the sixth branch flow ratio l6 to obtain a first edge gas flow and a second edge gas flow;

[0054] Among them, 1-a=l5+l6.

[0055] The first edge gas flow passes through the first edge gas inlet branch 321 and enters the edge reaction area of the first processing chamber 101 ; the second edge gas flow passes through the second edge gas inlet branch 322 and enters the edge reaction area of the second processing chamber 102 .

[0056] In this embodiment, the difference between the third branch flow ratio l3 and the fourth branch flow ratio l4 is less than 5%. Preferably, the difference between the third branch flow ratio l3 and the fourth branch flow ratio l4 is less than 2%. The difference between the fifth branch flow ratio l5 and the sixth branch flow ratio l6 is less than 5%. Preferably, the difference between the third branch flow ratio l3 and the fourth branch flow ratio l4 is less than 2%.

[0057] In this embodiment, the third branch flow rate ratio l3 and the fourth branch flow rate ratio l4 are determined by an intermediate fine adjustment ratio determined according to the etching rate difference between the two processing chambers.

[0058] For example, the third branch flow ratio l3 is calculated using the following formula:

[0059]

[0060] The fourth branch flow ratio l4 is calculated using the following formula:

[0061]

[0062] Wherein, Δ1 represents the intermediate fine adjustment ratio determined according to the etching rate difference between the two reaction chambers.

[0063] Alternatively, for example, the third branch flow ratio l3 is calculated using the following formula:

[0064]

[0065] The fourth branch flow ratio l4 is calculated using the following formula:

[0066]

[0067] Wherein, Δ1 represents the intermediate fine adjustment ratio determined according to the etching rate difference between the two reaction chambers.

[0068] In this embodiment, the fifth branch flow rate ratio l5 and the sixth branch flow rate ratio l6 are determined according to the edge fine adjustment ratio determined by the etching rate difference between the two processing chambers.

[0069] For example, the fifth branch flow ratio l5 is calculated using the following formula:

[0070]

[0071] The sixth branch flow ratio l6 is calculated using the following formula:

[0072]

[0073] Wherein, Δ2 represents the edge fine adjustment ratio determined according to the etching rate difference between the two reaction chambers.

[0074] Alternatively, for example, the fifth branch flow ratio l5 is calculated using the following formula:

[0075]

[0076] The sixth branch flow ratio l6 is calculated using the following formula:

[0077]

[0078] Wherein, Δ2 represents the edge fine adjustment ratio determined according to the etching rate difference between the two reaction chambers.

[0079] It can be seen from this that this embodiment uses three cascaded one-to-two gas splitters to not only split one process gas into four process gas flows and supply them to the central reaction area or edge reaction area of the two processing chambers respectively, but also can feedback adjust the flow ratio between the four process gas flows, flexibly adjust the amount of process gas in the two processing chambers, reduce the difference in etching rate between the two processing chambers, and ensure the consistency of substrate processing in the two processing chambers.

[0080] In order to understand the above embodiments, the working principle of the present invention is as follows:

[0081] The etching rates of the two processing chambers are detected and compared; based on the comparison results, the gas flow rates flowing into the four areas in the two processing chambers are set by the flow adjustment control unit to adjust the etching rates of the two processing chambers.

[0082] For Example 1, the total flow rate Q0 of the process gas flowing into the two processing chambers can be set by the flow adjustment control unit; the two processing chambers are respectively called the first processing chamber and the second processing chamber. When the etching rate of the first processing chamber is lower than the etching rate of the second processing chamber, the first gas flow rate Q1 in the first processing chamber is higher than the second gas flow rate Q2 in the second processing chamber; the sum of the first gas flow rate Q1 in the first processing chamber and the second gas flow rate Q2 in the second processing chamber is equal to the total process gas flow rate Q0.

[0083] For Example 2, the total process gas flow Q0 is split according to the first branch flow ratio a and the second branch flow ratio 1-a by the first gas splitter to obtain a first process gas flow and a second process gas flow. The first process gas flow is split according to the third branch flow ratio l3 and the fourth branch flow ratio l4 by the second gas splitter to obtain a first center gas flow and a second center gas flow. The first center gas flow is introduced into the center reaction area of the first processing chamber. The second center gas flow is introduced into the center reaction area of the second processing chamber. The second process gas flow is split according to the fifth branch flow ratio l5 and the sixth branch flow ratio l6 by the third gas splitter to obtain a first edge gas flow and a second edge gas flow. The first edge gas flow is introduced into the edge reaction area of the first processing chamber. The second edge gas flow is introduced into the edge reaction area of the second processing chamber.

[0084] The first gas flow rate Q1 is calculated using the following formula:

[0085] Q1=(l3+l5)Q0

[0086] The second gas flow rate Q2 is calculated using the following formula:

[0087] Q2=(l4+l6)Q0.

[0088] As is well known, there are various adjustment methods for changing the etching rate of the substrate. For example, parameters such as power and gas pressure in the etching recipe can be used to reduce the difference in etching rates between the two processing chambers. The adjustment process for the above parameters is complex and not easy to implement. However, the present embodiment reduces the difference in etching rates between the two processing chambers by keeping the total flow rate of the process gas unchanged and only changing the flow rate of the process gas distributed to the two processing chambers. This indirectly solves the problem of different gas pressures in the two processing chambers due to inherent problems of the gas outlet of the dual-chamber processing system, which in turn leads to inconsistent etching rates in the two processing chambers. The adjustment method of the present embodiment is simple and easy to implement, and the adjustment method is flexible.

[0089] like Figure 5 As shown, when the process gases in the two processing chambers are not regulated, the etching gas is subsequently referred to as the main etching gas. The process gas flow rate of the main etching gas flowing into the central reaction areas of the two processing chambers is equal, and the process gas flow rate of the main etching gas flowing into the edge reaction areas of the two processing chambers is also equal. For example, if the flow rate ratio of the main etching gas is 100%, then the flow rate ratio of the process gas flowing into the central reaction areas of the two processing chambers is a total of 70%. If evenly divided between the central reaction areas of the two processing chambers, the flow rate ratio of the process gas flowing into the central reaction area of one processing chamber is 35%.

[0090] The total process gas flow rate ratio flowing into the edge reaction areas of the two processing chambers is 30%, which is evenly distributed between the edge reaction areas of the two processing chambers. The process gas flow rate ratio flowing into the edge reaction area of one processing chamber is 15%. Measurements and calculations show that the difference in etching rates between the two processing chambers can reach 3%.

[0091] Please continue to refer to Figure 5 As shown, when the process gases in the two processing chambers are adjusted using the first or second embodiment described above, the process gas flows of the main etching gas flowing into the central reaction areas of the two processing chambers are not equal, and the process gas flows of the main etching gas flowing into the edge reaction areas of the two processing chambers may also be unequal. For example, if the flow ratio of the main etching gas is 100%, then the flow ratio of the process gas flowing into the central reaction areas of the two processing chambers is a total of 70%. By adjusting the gas flow meter, the flow ratio of the process gas flowing into the central reaction area of one processing chamber is 35.7%, and the flow ratio of the process gas flowing into the central reaction area of the other processing chamber is 34.3%.

[0092] The total process gas flow rate ratio flowing into the edge reaction areas of the two processing chambers is 30%. By adjusting the gas flow meter, the process gas flow rate ratio flowing into the edge reaction area of one processing chamber is 15.3%, and the process gas flow rate ratio flowing into the edge reaction area of the other processing chamber is 14.7%. Measurement and calculation show that the difference in etching rates between the two processing chambers can be reduced to 0.0%.

[0093] It can be seen that by fine-tuning the flow rate or flow ratio of the process gas entering the processing chamber, the difference in etching rates in the two processing chambers can be significantly reduced.

[0094] Furthermore, the dual-chamber processing system provided by the present invention can maintain minimal etch rate differences when etching substrates or wafers made of different materials using a single recipe, achieving consistent etch rates within the two processing chambers. In other words, the gas fine-tuning function of the dual-chamber processing system provided by the present invention enables nearly identical etch rates for substrates or wafers made of different materials.

[0095] It should be noted that, in this document, relational terms such as first and second, etc., are used only to distinguish one entity or operation from another entity or operation, and do not necessarily require or imply the existence of any such actual relationship or order between these entities or operations. Moreover, the terms "comprises," "comprising," or any other variants thereof are intended to cover non-exclusive inclusion, so that a process, method, article, or device comprising a series of elements includes not only those elements, but also other elements not explicitly listed, or elements inherent to such process, method, article, or device. In the absence of further limitations, an element defined by the phrase "comprising a ..." does not exclude the presence of other identical elements in the process, method, article, or device comprising the element.

[0096] In the description of the present invention, it should be understood that the terms "center," "height," "thickness," "up," "down," "vertical," "horizontal," "top," "bottom," "inside," "outside," "axial," "radial," "circumferential," and the like, indicating positions or location relationships, are based on the positions or location relationships shown in the accompanying drawings and are intended solely to facilitate the description of the present invention and simplify the description. They do not indicate or imply that the devices or components referred to must have a specific orientation, be constructed, or operate in a specific orientation. Therefore, they should not be construed as limitations on the present invention. In the description of the present invention, unless otherwise specified, "plurality" means two or more.

[0097] In the description of this utility model, unless otherwise expressly specified or limited, the terms "installed," "connected," "connected," and "fixed" should be understood in a broad sense. For example, they can refer to fixed connection, detachable connection, or integration; mechanical connection or electrical connection; direct connection or indirect connection through an intermediate medium; internal communication between two components or interaction between two components. Those skilled in the art will understand the specific meanings of the above terms in this utility model based on the specific circumstances.

[0098] In the present invention, unless otherwise expressly specified or limited, a first feature being "above" or "below" a second feature may include the first and second features being in direct contact, or may include the first and second features being in contact not directly but through another feature between them. Moreover, a first feature being "above," "above," and "above" a second feature may include the first feature being directly above or obliquely above the second feature, or may simply mean that the first feature is higher in level than the second feature. A first feature being "below," "below," and "below" a second feature may include the first feature being directly below or obliquely below the second feature, or may simply mean that the first feature is lower in level than the second feature.

[0099] Although the present invention has been described in detail through the above preferred embodiments, it should be understood that the above description should not be considered as limiting the present invention. After reading the above description, various modifications and alternatives to the present invention will be readily apparent to those skilled in the art. Therefore, the scope of protection of the present invention shall be defined by the appended claims.

Claims

1. A dual-chamber processing system, characterized in that: include: Two processing chambers, used to perform process processing on substrates placed therein respectively; The main gas inlet channel is connected to a process gas source, a gas splitter assembly, disposed on the main gas inlet channel, for splitting one process gas into four process gas flows, and supplying the four flows to the two processing chambers respectively; The flow adjustment control unit is used to control the gas splitter assembly according to the substrate processing results of the two processing chambers to adjust the flow of process gases entering the two processing chambers.

2. The dual-chamber processing system according to claim 1, wherein: The main air intake channel includes: a main air intake branch, two central air intake branches and two edge air intake branches; The inlet of the gas splitter assembly is connected to the outlet of the main air inlet branch; the inlet of the main air inlet branch is connected to the process gas source; The two outlets of the gas splitter assembly are respectively connected to the inlets of the two central gas inlet branches; the outlets of the two central gas inlet branches are used to supply process gases with the same or different gas flow ratios to the central reaction areas of the two processing chambers respectively; The other two outlets of the gas diverter assembly are respectively connected to the inlets of the two edge gas inlet branches, and the outlets of the two edge gas inlet branches are used to supply process gases with the same or different gas flow ratios to the edge reaction areas of the two processing chambers respectively.

3. The dual-chamber processing system according to claim 1 or 2, characterized in that: The gas splitter assembly includes a gas splitter divided into four.

4. The dual-chamber processing system according to claim 2, wherein: The gas splitter assembly includes three gas splitters divided into two, wherein the first gas splitter is arranged at the outlet of the main air intake branch, The inlets of the second gas splitter and the third gas splitter are respectively connected to the two outlets of the first gas splitter; The two outlets of the second gas flow divider are respectively connected to the inlets of the two central gas inlet branches; the outlets of the two central gas inlet branches are used to supply process gases with the same or different gas flow ratios to the central reaction areas of the two processing chambers respectively; The two outlets of the third gas diverter are respectively connected to the inlets of the two edge gas inlet branches; the outlets of the two edge gas inlet branches are used to supply process gases with the same or different gas flow ratios to the edge reaction areas of the two processing chambers respectively.

5. The dual-chamber processing system according to claim 2, wherein: The flow rate of gas supplied to the central reaction region is greater than the flow rate of gas supplied to the edge reaction region.

6. The dual-chamber processing system according to claim 4, wherein: The first gas splitter is used to split the flow of the process gas output from the main gas inlet branch according to a first branch flow ratio a and a second branch flow ratio 1-a to obtain a first process gas flow and a second process gas flow; The second gas splitter is used to split the first process gas flow according to the third branch flow ratio l3 and the fourth branch flow ratio l4 to obtain a first central gas flow and a second central gas flow; Where, a=l3+l4; The third gas splitter is used to split the second process gas flow according to the fifth branch flow ratio l5 and the sixth branch flow ratio l6 to obtain a first edge gas flow and a second edge gas flow; Among them, 1-a=l5+l6.

7. The dual-chamber processing system according to claim 6, wherein: The difference between the third branch flow rate ratio l3 and the fourth branch flow rate ratio l4 is less than 5%; The difference between the fifth branch flow rate ratio 15 and the sixth branch flow rate ratio 16 is less than 5%.

8. The dual-chamber processing system according to claim 6, wherein: The third branch flow rate ratio l3 and the fourth branch flow rate ratio l4 are determined according to an intermediate fine adjustment ratio determined by the etching rate difference between the two processing chambers; The fifth branch flow rate ratio l5 and the sixth branch flow rate ratio l6 are determined according to the edge fine adjustment ratio determined by the etching rate difference between the two processing chambers.

9. The dual-chamber processing system according to claim 1, wherein: The two processing chambers share one gas outlet.

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