Atomic layer deposition and physical vapor deposition compatible equipment

Abstract

The utility model discloses equipment compatible with atomic layer deposition and physical vapor deposition, which comprises a deposition chamber, a first environment adjusting unit, a first precursor supply unit, a second precursor supply unit, an atomic layer deposition excitation unit, a physical vapor deposition excitation unit, a first conveying device, a second conveying device, a second conveying device, a third conveying device and a fourth conveying device, the first environment adjusting unit is used for adjusting the temperature and the vacuum degree in the deposition chamber; the first precursor supply unit is used for providing a first precursor, and the second precursor supply unit is used for providing a second precursor; the atomic layer deposition excitation unit is used for converting the first precursor into an atomic layer deposition layer, and the physical vapor deposition excitation unit is used for converting the second precursor into a physical vapor deposition layer. According to the utility model, ALD equipment and PVD equipment are integrated, so that an ALD deposition process and a PVD deposition process can be simultaneously completed in the same chamber, the equipment cost can be saved, and the process flow is simplified.

Description

Technical Field

[0001] The utility model particularly relates to a device compatible with atomic layer deposition and physical vapor deposition, belonging to the technical field of semiconductor manufacturing equipment. Background Art

[0002] Atomic layer deposition (ALD) is a method of depositing a substance layer by layer on the surface of a substrate in the form of single atoms. During the ALD process, the chemical reaction of a new layer of atomic film is directly related to the previous layer, so that only one layer of atoms is deposited each time. The main reactants of ALD are two chemical substances, usually called precursors. The precursors react continuously and self-limitingly with the surface of the material, thereby achieving the deposition of thin films. Physical vapor deposition (PVD) is a technology that deposits thin films through physical mechanisms, such as evaporation and sputtering. The PVD process does not involve chemical reactions, so the deposited materials are of high purity and stable quality. Sputtering technology has the advantages of fast deposition rate, accurate deposition thickness control, precise composition control and low manufacturing cost, and is widely used in the semiconductor industry.

[0003] As semiconductor device performance requirements continue to rise, the aspect ratios and structural complexity of device structures continue to increase. Thin films used in semiconductor materials require control down to the atomic level. This necessitates films with superior coverage to act as buffer or barrier layers. These functional layers effectively protect device interfaces from diffusion and oxidation, and can also modify poor interfaces to enhance device performance. However, the slow deposition rates and high equipment costs of ALD equipment hinder production efficiency. While PVD equipment can achieve high deposition rates, typically 0.1nm / s to 20nm / s, the resulting films lack density and coverage, failing to meet application requirements. Current technology requires purchasing two separate tools—PVD and ALD—significantly increasing production costs and significantly compromising efficiency and device performance. However, integrating atomic layer deposition (ALD) and physical vapor deposition (PVD) into an integrated system allows for the deposition of diverse thin film types on a single device. This system allows for precise control of film thickness, composition, and structure during the fabrication process, meeting diverse application scenarios. For example, in semiconductor device manufacturing, ALD can be used to prepare high-purity ultra-thin film layers, while in the metallization process, PVD technology can be used to achieve fast and accurate thin film deposition.

[0004] In summary, the method of combining atomic layer deposition with physical vapor deposition has a wide range of applications and superior performance, providing strong technical support for the field of thin film preparation.

[0005] In the existing technology, PVD equipment and ALD equipment are independent equipment, and the cost of using the equipment is very high for production companies; the process flow is also independent, such as Figure 1 As shown, two separate process flows would complicate the overall process, causing inconvenience and reducing production efficiency. In the prior art, the by-products generated during the process require the configuration of multiple sets of additional by-product treatment devices, further increasing equipment costs. The present invention, however, rationally integrates the by-product treatment system into the equipment itself. Adding the required by-product treatment devices at specific locations not only reduces equipment construction costs but also effectively protects the equipment and extends its maintenance cycle. Summary of the Invention

[0006] The main purpose of the utility model is to provide a device that is compatible with atomic layer deposition and physical vapor deposition, thereby overcoming the deficiencies in the prior art.

[0007] In order to achieve the above-mentioned invention objectives, the technical solutions adopted by the present invention include:

[0008] The utility model provides a device compatible with atomic layer deposition and physical vapor deposition, comprising:

[0009] A deposition chamber, used to provide a closed environment for atomic layer deposition and physical vapor deposition, wherein the deposition chamber is provided with a plurality of process windows and a plurality of baffles, each of the baffles being matched with at least one process window, and the baffles being used to open and close the corresponding process window;

[0010] a first environment adjustment unit, configured to adjust the temperature and vacuum level in the deposition chamber to form an environment required for atomic layer deposition and physical vapor deposition in the deposition chamber;

[0011] at least one first precursor supply unit and at least one second precursor supply unit, the first precursor supply unit and the second precursor supply unit being independently connected to one of the process windows, the first precursor supply unit being used to supply a first precursor required for atomic layer deposition from the corresponding process window into the deposition chamber, and the second precursor supply unit being used to supply a second precursor required for physical vapor deposition from the corresponding process window into the deposition chamber;

[0012] At least one atomic layer deposition excitation unit and at least one physical vapor deposition excitation unit, the atomic layer deposition excitation unit is used to convert the first precursor in the deposition chamber into an atomic layer deposition layer, and the physical vapor deposition excitation unit is used to convert the second precursor in the deposition chamber into a physical vapor deposition layer;

[0013] The first conveying device is disposed in the deposition chamber and is used to transfer samples within the deposition chamber and drive the samples to move back and forth.

[0014] Furthermore, the first conveying device includes a transmission structure and a motion execution structure, the transmission structure and the motion execution structure are in transmission cooperation, the motion execution structure is used to carry the sample, and an isolation mechanism is also provided in the deposition chamber, the motion execution structure is provided on the side of the isolation mechanism close to the process window, and the transmission structure is provided on the side of the isolation mechanism facing away from the process window.

[0015] Furthermore, the motion execution structure may include a plurality of rolling bodies that are arranged in sequence along a selected direction and can rotate around their own axes. By driving the plurality of rolling bodies to rotate synchronously in the same direction, the samples located on the plurality of rolling bodies can be moved along the selected direction. The transmission structure includes a plurality of meshing gears or other structures that can realize motion transmission. No specific limitation is made here. The rolling body can be a ball or a roller, etc.

[0016] In a more specific embodiment, the device compatible with atomic layer deposition and physical vapor deposition further includes: a monitoring unit, the monitoring unit is used to monitor the deposition rate of the physical vapor deposition layer / the atomic layer deposition layer, the thickness of the physical vapor deposition layer / the atomic layer deposition layer, at least one of the temperature and pressure in the deposition chamber. More specifically, the monitoring unit may include a temperature sensor, an air pressure sensor, a visual monitor, and processing software that cooperates with the visual monitor, etc. The temperature sensor and the air pressure sensor are arranged inside the deposition chamber, and the visual monitor can be arranged inside or outside the deposition chamber. The structure and composition of the monitoring unit itself and the way it realizes the above functions are all known to those skilled in the art and are not specifically limited here. More specifically, the monitoring unit also includes a safety monitoring mechanism, which is used to monitor and alarm information such as gas leakage, temperature exceeding the standard, and vacuum leakage in the deposition chamber.

[0017] In a more specific embodiment, the apparatus compatible with atomic layer deposition and physical vapor deposition further includes: a control unit, the control unit being connected to the monitoring unit, the first environmental adjustment unit, the first precursor supply unit, the second precursor supply unit, the atomic layer deposition excitation unit, the physical vapor deposition excitation unit, and the first conveying device, and being used to adjust at least one of the deposition rate of the physical vapor deposition layer / the atomic layer deposition layer, the temperature and pressure within the deposition chamber, and the supply flow rate of the first precursor and the second precursor. Specifically, the control unit may include a PLC controller and a corresponding control program. It should be noted that the PLC controller and the corresponding control program are both commercially available, and their specific structure and working principle are not described in detail herein.

[0018] In a more specific embodiment, the equipment compatible with atomic layer deposition and physical vapor deposition also includes: a preheating chamber and a second environmental adjustment unit. The preheating chamber and the deposition chamber have two working states: interconnected and isolated from each other. The second environmental adjustment unit is used to adjust the temperature and vacuum degree in the deposition chamber.

[0019] In a more specific embodiment, the apparatus compatible with atomic layer deposition and physical vapor deposition further includes: a second conveying device, which is disposed in the preheating chamber and is used to transfer samples from the preheating chamber and to transfer the samples to the first conveying device.

[0020] In a more specific embodiment, the first environmental conditioning unit includes a first heating mechanism and a first vacuum mechanism, the first heating mechanism is integrated in the deposition chamber, and the first vacuum mechanism is connected to the deposition chamber via a connecting pipe, and the second environmental conditioning unit includes a second heating mechanism and a second vacuum mechanism, the second heating mechanism is integrated in the preheating chamber, and the second vacuum mechanism is connected to the preheating chamber via a connecting pipe, wherein the first vacuum mechanism and the second vacuum mechanism are integrated into one.

[0021] In a more specific embodiment, the equipment compatible with atomic layer deposition and physical vapor deposition also includes: an unloading chamber and a third environmental adjustment unit. The unloading chamber and the deposition chamber have two working states: interconnected and isolated from each other. The third environmental adjustment unit is used to adjust the temperature and vacuum degree in the unloading chamber.

[0022] In a more specific embodiment, the apparatus compatible with atomic layer deposition and physical vapor deposition further includes: a third conveying device, which is disposed in the unloading chamber and is used to receive samples conveyed by the first conveying device and transfer samples in the unloading chamber.

[0023] In a more specific embodiment, the third environmental conditioning unit includes a third heating mechanism and a third vacuum pumping mechanism. The third heating mechanism is integrated in the unloading chamber, and the third vacuum pumping mechanism is connected to the unloading chamber via a connecting pipe, wherein the first vacuum pumping mechanism, the second vacuum pumping mechanism and the third vacuum pumping mechanism are integrated into one.

[0024] In a more specific embodiment, the apparatus compatible with atomic layer deposition and physical vapor deposition further includes: a by-product processing unit, which is connected to the deposition chamber and is used to collect and / or purify the by-products generated in the deposition chamber and the remaining first precursor and second precursor.

[0025] Furthermore, the first vacuum pumping mechanism, the second vacuum pumping mechanism and the third vacuum pumping mechanism can be integrated, that is, the same vacuum pumping mechanism is connected to and cooperates with the deposition chamber, preheating chamber and unloading chamber at the same time. The first vacuum pumping mechanism, the second vacuum pumping mechanism and the third vacuum pumping mechanism can be vacuum pumps, etc., and the first heating mechanism, the second heating mechanism and the third heating mechanism can be electric heating plates or heating wires, etc.

[0026] Compared with the prior art, the advantages of the present invention include:

[0027] An embodiment of the present invention provides a device that is compatible with atomic layer deposition and physical vapor deposition processes, integrating an ALD device and a PVD device into one, and can simultaneously complete the ALD deposition process and the PVD deposition process in the same chamber, which can save equipment costs and simplify the process flow.

[0028] The embodiment of the present invention provides a device that is compatible with atomic layer deposition and physical vapor deposition processes. The reasonable use of sub-nanometer layers deposited by ALD in combination with film layers deposited by PVD can not only achieve corresponding functions but also effectively further improve the performance of the device.

[0029] The embodiment of the present utility model provides a device that is compatible with atomic layer deposition and physical vapor deposition processes, has a reasonable by-product treatment system layout, can effectively extend the equipment maintenance cycle and protect environmental safety, while reducing the equipment construction cost. BRIEF DESCRIPTION OF THE DRAWINGS

[0030] Figure 1 It is a process flow chart of atomic layer deposition and physical vapor deposition in the prior art;

[0031] Figure 2 This is a schematic diagram of a portion of the structure of an apparatus compatible with atomic layer deposition and physical vapor deposition processes provided in a typical embodiment of the present invention;

[0032] Figure 3 This is a schematic diagram of a process flow of an apparatus compatible with atomic layer deposition and physical vapor deposition processes provided in a typical embodiment of the present invention;

[0033] Figure 4 This is a schematic structural diagram of an inverted pin perovskite solar cell. DETAILED DESCRIPTION

[0034] In view of the shortcomings of the prior art, the inventors of this case have proposed the technical solution of the present utility model after long-term research and extensive practice. The following will further explain this technical solution, its implementation process and principles, etc. with reference to the accompanying drawings. Unless otherwise specified, the functional mechanisms in the embodiments of the present utility model are known to those skilled in the art.

[0035] The utility model is particularly important for the PSCs industry. If the product PVSK is exposed to water and oxygen in the air for a long time during the process flow, it will cause degradation; in addition, during the process flow, the device will inevitably be contaminated by the external environment, and these problems will affect the performance of the device.

[0036] To address the aforementioned issues, the present invention integrates ALD and PVD equipment into a single device. In this device, atomic layer deposition (ALD) and physical vapor deposition (PVD) technologies are combined to achieve more complex thin film deposition and multilayer film stacking. ALD technology can produce very uniform, dense films, while PVD technology offers fast deposition rates and excellent adhesion. Therefore, combining the two not only overcomes their respective limitations, achieving more optimized thin film deposition results, but also resolves complex process flows, reduces equipment costs, and optimizes device performance. This device has broad application prospects in fields such as microelectronics, optoelectronics, and nanotechnology.

[0037] The present invention provides a device compatible with both atomic layer deposition (ALD) and physical vapor deposition (PVD) processes, which has a variety of applications, such as semiconductor manufacturing, nanomaterial synthesis, and optical thin film preparation. The device combines the advantages of atomic layer deposition and physical vapor deposition to achieve uniform and controllable deposition of thin films.

[0038] In a typical implementation case, an apparatus compatible with atomic layer deposition and physical vapor deposition processes provided by an embodiment of the present invention mainly includes the following functional units and meets the following requirements:

[0039] Equipment structure: For both PVD evaporation source and ALD source, the bottom-out deposition method can be adopted. The equipment should have a shared deposition area for atomic layer deposition and physical vapor deposition; the plasma ionization device is installed upstream of the dust filter device, so that the solid particles generated by the reaction of excess chemical precursors after ionization can be collected by the dust filter device, and the dust filter device is installed at the front end / upstream of the vacuum mechanism and the butterfly valve, so as to maximize the protection of the vacuum mechanism and the butterfly valve; optionally, a preheating chamber and a unloading chamber with independently controlled vacuuming are installed upstream and downstream of the deposition chamber, and are equipped with corresponding functions (hardware) to realize heating, sample transmission and other functions, so as to further improve production efficiency.

[0040] Deposition chamber: The deposition chamber should have high vacuum, high temperature, and constant temperature control to meet the requirements of different deposition processes. It should also be equipped with a gas introduction system, temperature control system, and pressure control system.

[0041] Isolation unit: Different processes should have good isolation (unit) hardware. For example, the isolation device in the deposition chamber can effectively protect the transmission part below the deposition chamber and reduce maintenance steps. Multiple baffles are used for atomic layer deposition and physical vapor deposition. The precursor supply lines have good isolation performance when using different process methods to prevent cross-contamination of precursors.

[0042] Precursor supply unit: To meet the needs of atomic layer deposition and physical vapor deposition, the equipment should be equipped with two or more precursor supply units. The precursors used in atomic layer deposition are usually metal organic compounds; the precursors used in physical vapor deposition can be metals, alloys, carbides, nitrides, oxides, mixtures, etc.

[0043] Monitoring unit: The equipment should be equipped with a real-time monitoring unit to monitor key parameters in the deposition process, such as deposition rate, film thickness, deposition temperature, chamber pressure, etc. The monitoring unit will feed these key parameters back to the control unit, which can adjust the working parameters of the corresponding functional units in real time based on these parameters to achieve excellent film performance and save and record relevant data.

[0044] Control unit: The equipment should have a comprehensive control unit to achieve precise control of the atomic layer deposition and physical vapor deposition processes. The control unit should include control over deposition rate, temperature, pressure, gas flow, and pumping speed to ensure stability and repeatability of the ALD and PVD film deposition processes.

[0045] Transfer unit: The equipment should be equipped with a transfer unit to facilitate the switching between atomic layer deposition and physical vapor deposition. The transfer unit should have high precision and high reliability to ensure the continuity and consistency of the deposition process.

[0046] Safety measures: Given the harmful gases and high-temperature environments that may be generated during atomic layer deposition and physical vapor deposition, the equipment should have comprehensive safety measures, such as gas leak detection, temperature over-limit alarm, vacuum leak detection, etc. These functions can be achieved by the monitoring unit.

[0047] In a typical implementation case, an embodiment of the present invention provides an apparatus compatible with atomic layer deposition and physical vapor deposition processes, including:

[0048] The preheating chamber 101, the deposition chamber 102, and the unloading chamber 103 are connected in sequence. The entrance of the preheating chamber 101 is provided with a first chamber door 1303 that can be opened and closed. The communication port between the preheating chamber 101 and the deposition chamber 102 is provided with a second chamber door 1301 that can be opened and closed. The communication port between the deposition chamber 102 and the unloading chamber 103 is provided with a third chamber door 1302 that can be opened and closed. The exit of the unloading chamber 103 is provided with a fourth chamber door 1304 that can be opened and closed. A plurality of process windows and a plurality of baffles are provided on the top, each baffle being matched with at least one process window, and the baffles being used to open and close the process windows. The plurality of process windows include a first process window, a second process window, a third process window, a fourth process window, a fifth process window, a sixth process window, and a seventh process window. The plurality of baffles include a first baffle 601, a second baffle 602, a third baffle 603, a fourth baffle 604, a fifth baffle 605, a sixth baffle 606, and a seventh baffle 607. The seven baffles correspond to the seven windows one by one.

[0049] A second conveyor 401 is provided in the preheating chamber 101, a first conveyor 402 is provided in the deposition chamber 102, and a third conveyor 403 is provided in the unloading chamber 103. The second conveyor 401, the first conveyor 402, and the third conveyor 403 are coordinated end to end to realize the conveyance / transfer of samples in the preheating chamber 101, the deposition chamber 102, and the unloading chamber 103;

[0050] The preheating chamber 101, the deposition chamber 102, and the unloading chamber 103 are all provided with heating mechanisms. The preheating chamber 101, the deposition chamber 102, and the unloading chamber 103 are also respectively connected to the vacuum pump 1101 via connecting pipelines. The connecting pipelines include three branch pipelines and one main pipeline. The three branch pipelines are respectively connected to the preheating chamber 101, the deposition chamber 102, and the unloading chamber 103. The three branch pipelines are connected to the main pipeline, and the main pipeline is connected to the vacuum pump 1101. A first ball valve 1001 is provided on the branch pipeline between the preheating chamber 101 and the vacuum pump 1101, a second ball valve 1002 is provided on the branch pipeline between the deposition chamber 102 and the vacuum pump 1101, and a third ball valve 1003 is provided on the branch pipeline between the unloading chamber 103 and the vacuum pump 1101.

[0051] a plurality of first precursor supply units and a plurality of second precursor supply units, wherein the plurality of first precursor supply units correspond to and are connected to the first process window, the third process window, and the fifth process window, respectively; the first precursor supply units are used to provide the first precursor required for atomic layer deposition from the process window corresponding thereto into the deposition chamber; the plurality of second precursor supply units correspond to and are connected to the second process window, the fourth process window, the seventh process window, and the sixth process window, respectively; the second precursor supply units are used to provide the second precursor required for physical vapor deposition from the process window corresponding thereto into the deposition chamber;

[0052] A first chemical source control device 201, a second chemical source control device 202, a third chemical source control device 203, and a plurality of atomic layer deposition excitation mechanisms. The first chemical source control device 201, the second chemical source control device 202, and the third chemical source control device 203 respectively cooperate with the plurality of first precursor supply units and control the working states and working parameters of the first precursor supply units. The plurality of atomic layer deposition excitation mechanisms are disposed in the deposition chamber 102 and are used to convert the first precursor in the deposition chamber into an atomic layer deposition layer.

[0053] The first sputtering power supply 301, the second sputtering power supply 302, the third sputtering power supply 303, and the fourth sputtering power supply 304 correspond to the second process window, the fourth process window, the seventh process window, and the sixth process window respectively. The first sputtering power supply 301, the second sputtering power supply 302, the third sputtering power supply 303, and the fourth sputtering power supply 304 cooperate with the target material to transform the second precursor in the deposition chamber into a physical vapor deposition layer.

[0054] It should be noted that Figure 2The device shown in the figure is compatible with atomic layer deposition and physical vapor deposition processes. The monitoring unit and the control unit are not shown. The specific structure of the monitoring unit and the control unit, as well as the structure and method of cooperating with other functional units are all known to those skilled in the art and are not specifically described here. Specifically, the monitoring unit is used to monitor at least one of the deposition rate of the physical vapor deposition layer / atomic layer deposition layer, the thickness of the physical vapor deposition layer / atomic layer deposition layer, the temperature in the deposition chamber, and the pressure. More specifically, the monitoring unit may include a temperature sensor, an air pressure sensor, a visual monitor, and processing software that cooperates with the visual monitor. The temperature sensor and the air pressure sensor are arranged inside the deposition chamber, and the visual monitor can be arranged inside or outside the deposition chamber. The structure and composition of the monitoring unit itself and the way in which it realizes the above functions are all known to those skilled in the art and are not specifically limited here. More specifically, the monitoring unit also includes a safety monitoring mechanism, which is used to monitor and alarm information such as gas leakage, temperature exceeding the standard, and vacuum leakage in the deposition chamber.

[0055] Of course, the device provided by the embodiment of the present invention, which is compatible with atomic layer deposition and physical vapor deposition processes, also includes other functional mechanisms that enable it to achieve atomic layer deposition and physical vapor deposition. These are all known to those skilled in the art and will not be elaborated here.

[0056] Specifically, the vacuum pump (i.e., vacuum pumping mechanism) 1101 in the present invention can realize vacuum pumping of the preheating chamber 101, the deposition chamber 102, and the unloading chamber 103 to adjust the vacuum degree in the preheating chamber 101, the deposition chamber 102, and the unloading chamber 103.

[0057] Specifically, the structures of the second conveying device 401, the first conveying device 402, and the third conveying device 403 in the present invention can be the same. The second conveying device 401, the first conveying device 402, and the third conveying device 403 can be a conveyor belt structure, a chain conveying structure, a roller conveying structure, etc. Exemplarily, the first conveying device 402 includes a transmission structure and a motion execution structure. The transmission structure and the motion execution structure are coordinated in transmission. The motion execution structure is directly coordinated with the sample. In addition, an isolation mechanism 501 is also provided in the deposition chamber. The motion execution structure is arranged on the side of the isolation mechanism 501 close to the process window, and the motion execution structure is arranged on the side of the isolation mechanism 501 facing away from the process window. The isolation mechanism 501 can prevent the first precursor and the second precursor from causing corrosion and other damage to the transmission structure, thereby protecting the transmission structure. It should be noted that the isolation mechanism 501 can be a partition with holes, etc., and the balls or rollers contained in the motion execution structure are correspondingly exposed in the openings of the partition.

[0058] For details, please refer to Figure 2, an embodiment of the present invention provides an apparatus compatible with atomic layer deposition and physical vapor deposition processes, further comprising a by-product treatment unit, which is connected to the preheating chamber 101, the deposition chamber 102, and the unloading chamber 103, and is used to collect and / or purify the by-products generated in the deposition chamber 102 and the remaining first precursor and second precursor. Specifically, the by-product treatment unit includes a plasma ionization device 701, a dust filter 801, and an acid-base treatment device 1201. The plasma ionization device 701 and the dust filter 801 are sequentially arranged on the main line between the vacuum pump 1101 and the deposition chamber 102. A butterfly valve 901 is also provided on the main line between the dust filter 801 and the vacuum pump 1101, and the acid-base treatment device 1201 is arranged at the end of the main line.

[0059] Please also refer to Figure 3 and Figure 4 The process of preparing an inverted structure PIN perovskite solar cell using a compatible atomic layer deposition and physical vapor deposition device includes the following steps:

[0060] 1) A transparent conductive substrate 1 and a hole transport layer (HTL) are prepared on a substrate. The material of the transparent conductive substrate can be selected from indium tin oxide (ITO), aluminum zinc oxide (AZO) or other mixed materials. In this example, the material of the transparent conductive substrate is TCO; the material of the hole transport layer can be selected from copper oxide, nickel oxide, and at least one material selected from 2,2",7,7"-tetrakis[N,N-di(4-methoxyphenyl)amino]-9,9'-spirobifluorene (Spiro-OMeTAD).

[0061] This example uses the device of the present invention to deposit a layer of nickel oxide NiO as a hole transport layer, specifically including:

[0062] First, the sample enters the preheating chamber 101 through the second conveyor 401. The second ball valve 1002 and the third ball valve 1003 are closed, and the first chamber door 1303 is closed. The first ball valve 1001 is opened, and the preheating chamber 101 is evacuated and the substrate is preheated. The temperature of the preheating chamber 101 and the deposition chamber 102 is 70°C to 150°C. After the preheating is completed, the second chamber door 1301 is opened and closed after the sample enters the deposition chamber 102.

[0063] After the first baffle 601, the third baffle 603, the fifth baffle 605, the sixth baffle 606, and the seventh baffle 607 are closed, the plasma ionization device 701 and the acid-base treatment device 1201 are turned on;

[0064] Then, the vacuum pressure in the deposition chamber 102 is maintained at 3.0E-3 Pa to 3.0E-5 Pa by controlling the butterfly valve 901, the second baffle 602 is opened, and after waiting for a few seconds, the first sputtering power source 301 is turned on to perform a PVD deposition process on the transparent conductive substrate (TCO) 1, with the thickness of the transparent conductive substrate 1 being controlled to be 200 nm to 300 nm.

[0065] After the transparent conductive substrate 1 is deposited, wait for a few seconds, turn off the first sputtering power supply 301, close the second baffle 602; open the fourth baffle (target material baffle 604), turn on the second sputtering power supply 302, and start the PVD deposition process of the nickel oxide layer, using the nickel oxide layer as the hole transport layer (HTL) 2. After the deposition is completed, turn off the second sputtering power supply 302, close the fourth baffle 604, wait for a certain period of time, turn off the plasma ionization device 701, turn off the acid-base treatment system 1201, close the second ball valve 1002, open the third ball valve 1003 to evacuate the chamber, wait until the vacuum degree of the deposition chamber 102 and the unloading chamber 103 is close, open the third chamber door 1302, and transfer the sample after the deposition of the transparent conductive substrate 1 and the hole transport layer (HTL) 2 to the unloading chamber 103 via the first conveying device 402 and the third conveying device 403. Close the third ball valve 1003, close the third chamber door 1302, open the fourth chamber door 1304, and cool the sample before being removed.

[0066] 2) A perovskite light absorbing layer (PVSK) 3 is prepared on the hole transport layer (HTL) 2 by using at least one of a spin coating process, a coating process, and a screen printing process. The thickness of the perovskite light absorbing layer (PVSK) 3 is 500 nm.

[0067] 3) depositing an electron transport layer (ETL) 4-1 on the perovskite light absorbing layer (PVSK) 3. The material of the electron transport layer (ETL) 4-1 may be at least one of carbon 60 (C60), lithium fluoride, magnesium fluoride, and fullerene derivative (PCBM).

[0068] The present invention takes magnesium fluoride (MgF) as an example, and uses the compatible atomic layer deposition and physical vapor deposition equipment of the present invention to deposit magnesium fluoride (MgF) on the perovskite light absorption layer (PVSK) 3 to form an electron transport layer (ETL) 4-1.

[0069] First, open the first chamber door 1303, and send the sample into the preheating chamber 101 through the second conveying device 401. Close the second ball valve 1002 and the third ball valve 1003, open the first ball valve 1001, and evacuate and preheat the preheating chamber 101. The temperature of the preheating chamber 101 and the deposition chamber 102 is 70℃~150℃. After the preheating is completed, open the second chamber door 1301. After the sample enters the deposition chamber 102, close the second chamber door 1301, close the first ball valve 1001, open the second ball valve 1002, and confirm that the first baffle 601, the third baffle 603, the fifth baffle 605, and the third baffle 606 are in a state of equilibrium. After the sixth baffle 606 and the seventh baffle 607 are closed, the plasma ionization device 701 and the acid-base treatment device 1201 are opened; then the vacuum pressure in the deposition chamber 102 is maintained at 3.0E-3 Pa to 3.0E-5 Pa by controlling the butterfly valve 901, the seventh baffle 607 is opened, and after waiting for a few seconds, the third sputtering power supply 303 is turned on to perform the PVD deposition process of MgF, controlling the thickness of MgF to 20 nm to 30 nm, and forming the electron transport layer 4-1; after the electron transport layer 4-1 is deposited, wait for a few seconds, turn off the third sputtering power supply 303, and close the seventh baffle 607.

[0070] 4) Next, a buffer layer 4-2 is prepared by depositing the buffer layer 4-2 on the electron transport layer 4-1 using the utility model's compatible atomic layer deposition and physical vapor deposition equipment. The material of the buffer layer 4-2 can be at least one of tin oxide, zinc oxide, titanium oxide, and aluminum oxide.

[0071] The present invention takes tin oxide (SnO2) as an example; first, the vacuum value in the deposition chamber 102 is adjusted by the butterfly valve 901, and after the vacuum reaches 100 Pa to 300 Pa and the pressure is stabilized, the first baffle 601, the third baffle 603, and the fifth baffle 605 are opened, and the valves on the pipeline of the precursor supply unit are opened through the first chemical source control device 201, the second chemical source control device 202, and the second chemical source control device 203, and the chemical source is introduced into the deposition chamber to perform the ALD deposition SnO2 process. During the process, the sample is swung back and forth by the first conveying device 402 during the ALD deposition process to obtain a more uniform film layer, thereby improving the film layer quality. The thickness of SnO2 is 5nm to 30nm, and the deposition rate is controlled at / loop~ / between cycles; after the ALD process deposition is completed, the valve on the pipeline of the precursor supply unit is opened through the first chemical source control device 201, the second chemical source control device 202, and the second chemical source control device 203, the chemical source supply is stopped, and the first baffle 601, the third baffle 603, and the fifth baffle 605 are closed.

[0072] 5) Next, a metal electrode 5 is prepared on the buffer layer 4 - 2 using a PVD process. The material of the metal electrode 5 can be at least one of gold, silver, aluminum, and copper.

[0073] The present invention selects silver (Ag) material as an example; the sample is adjusted to a suitable position by the first conveying device 402, and the vacuum pressure in the deposition chamber 102 is stabilized at 1.0E-4 Pa to 3.0E-5 Pa by controlling the butterfly valve 901, and then the sixth baffle 606 is opened. After waiting for a few seconds, the fourth sputtering power supply 304 is turned on, and Ag with a thickness of 5nm to 30nm is deposited as an electrode layer through a PVD process. After the deposition of the electrode layer is completed, wait for a few seconds, turn off the fourth sputtering power supply 304, close the sixth baffle 606, wait for a certain period of time, turn off the plasma ionization device 701, and turn off the acid-base treatment device 1201; open the third chamber door 1302, and convey the sample to the unloading chamber 103 by the first conveying device 402, close the third chamber door 1302, and after the sample is cooled, open the fourth chamber door 1304 to vent and take it out, and finally make a complete perovskite solar cell (PSCs) device.

[0074] In all of the above process, whether it is ALD or PVD process, as long as the film layer is deposited, by-products will be generated. The by-product treatment unit in the utility model can achieve a better treatment effect on the by-products, which can not only extend the maintenance cycle of the equipment, especially the protection of the pump group and the environment, but also, for example, the plasma treatment device 701 can ionize the by-products in the form of gas that are difficult to treat by conventional methods and then enter the acid-base treatment device 1201 for further inactivation treatment; and the dust filter 801 can collect the solid dust particles generated in the process, reduce the impact of dust particles on the pump group and extend the service life; the acid-base treatment device can effectively treat the waste gas that may be generated in the process, such as hydrogen chloride gas, ammonia, etc., and neutralize them in the acid-base treatment device.

[0075] Through the above design, this equipment, which is compatible with atomic layer deposition and physical vapor deposition processes, can not only achieve uniform and controllable deposition of multiple materials in the same chamber, but also simplify the film preparation process, providing strong support for research and application in fields such as semiconductors, nanomaterials and optics.

[0076] The embodiment of the present invention provides a device that is compatible with atomic layer deposition and physical vapor deposition processes, which can reduce the cost of equipment use, simplify the process flow and improve production efficiency. The combination of ALD's ultra-thin film layer and ideal coverage with PVD's faster deposition speed and process diversification can overcome their respective limitations and improve device performance.

[0077] It should be understood that the above embodiments are merely illustrative of the technical concepts and features of the present invention. Their purpose is to enable those familiar with the art to understand the contents of the present invention and implement them accordingly. They are not intended to limit the scope of protection of the present invention. Any equivalent changes or modifications based on the spirit of the present invention are intended to fall within the scope of protection of the present invention.

Claims

1. A device compatible with atomic layer deposition and physical vapor deposition, characterized in that: include: A deposition chamber, used to provide a closed environment for atomic layer deposition and physical vapor deposition, wherein the deposition chamber is provided with a plurality of process windows and a plurality of baffles, each of the baffles being matched with at least one process window, and the baffles being used to open and close the corresponding process window; a first environment adjustment unit, configured to adjust the temperature and vacuum level in the deposition chamber to form an environment required for atomic layer deposition and physical vapor deposition in the deposition chamber; at least one first precursor supply unit and at least one second precursor supply unit, the first precursor supply unit and the second precursor supply unit being independently connected to one of the process windows, the first precursor supply unit being used to supply a first precursor required for atomic layer deposition from the corresponding process window into the deposition chamber, and the second precursor supply unit being used to supply a second precursor required for physical vapor deposition from the corresponding process window into the deposition chamber; At least one atomic layer deposition excitation unit and at least one physical vapor deposition excitation unit, the atomic layer deposition excitation unit is used to convert the first precursor in the deposition chamber into an atomic layer deposition layer, and the physical vapor deposition excitation unit is used to convert the second precursor in the deposition chamber into a physical vapor deposition layer; The first conveying device is disposed in the deposition chamber and is used to transfer samples within the deposition chamber and drive the samples to move back and forth.

2. The device compatible with atomic layer deposition and physical vapor deposition according to claim 1, characterized in that: The first conveying device includes a transmission structure and a motion execution structure, the transmission structure and the motion execution structure are in transmission cooperation, the motion execution structure is used to carry the sample, and an isolation mechanism is also provided in the deposition chamber, the motion execution structure is provided on the side of the isolation mechanism close to the process window, and the transmission structure is provided on the side of the isolation mechanism facing away from the process window.

3. The device compatible with atomic layer deposition and physical vapor deposition according to claim 1, characterized in that: Also includes: A monitoring unit is used to monitor at least one of the deposition rate of the physical vapor deposition layer / the atomic layer deposition layer, the thickness of the physical vapor deposition layer / the atomic layer deposition layer, the temperature in the deposition chamber, and the pressure.

4. The device compatible with atomic layer deposition and physical vapor deposition according to claim 3, characterized in that: Also includes: A control unit, which is connected to the monitoring unit, the first environmental adjustment unit, the first precursor supply unit, the second precursor supply unit, the atomic layer deposition excitation unit, the physical vapor deposition excitation unit, and the first conveying device, and is used to adjust the deposition rate of the physical vapor deposition layer / the atomic layer deposition layer, the temperature and pressure in the deposition chamber, and at least one of the supply flow rates of the first precursor and the second precursor.

5. The device compatible with atomic layer deposition and physical vapor deposition according to claim 1, characterized in that: Also includes: A preheating chamber and a second environmental adjustment unit, wherein the preheating chamber and the deposition chamber have two working states: interconnected and isolated from each other; the second environmental adjustment unit is used to adjust the temperature and vacuum degree in the deposition chamber.

6. The device compatible with atomic layer deposition and physical vapor deposition according to claim 5, characterized in that: Also includes: A second conveying device is disposed in the preheating chamber and is used to transfer samples from the preheating chamber and to transfer the samples to the first conveying device.

7. The device compatible with atomic layer deposition and physical vapor deposition according to claim 5, characterized in that: The first environmental conditioning unit includes a first heating mechanism and a first vacuum mechanism, the first heating mechanism is integrated in the deposition chamber, and the first vacuum mechanism is connected to the deposition chamber via a connecting pipe. The second environmental conditioning unit includes a second heating mechanism and a second vacuum mechanism, the second heating mechanism is integrated in the preheating chamber, and the second vacuum mechanism is connected to the preheating chamber via a connecting pipe, wherein the first vacuum mechanism and the second vacuum mechanism are integrated into one.

8. The device compatible with atomic layer deposition and physical vapor deposition according to claim 7, characterized in that: Also includes: The unloading chamber and the third environmental adjustment unit are configured such that the unloading chamber and the deposition chamber have two working states: interconnected and isolated from each other. The third environmental adjustment unit is configured to adjust the temperature and vacuum degree in the unloading chamber.

9. The device compatible with atomic layer deposition and physical vapor deposition according to claim 8, characterized in that: Also includes: A third conveying device is provided in the unloading chamber and is used for receiving the sample conveyed by the first conveying device and transferring the sample into the unloading chamber.

10. The device compatible with atomic layer deposition and physical vapor deposition according to claim 8, characterized in that: The third environmental conditioning unit includes a third heating mechanism and a third vacuum pumping mechanism. The third heating mechanism is integrated in the unloading chamber. The third vacuum pumping mechanism is connected to the unloading chamber via a connecting pipe. The first vacuum pumping mechanism, the second vacuum pumping mechanism and the third vacuum pumping mechanism are integrated into one.

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