Driving circuit of electromagnetic heating device and cooking utensil

Abstract

The utility model relates to the field of kitchen ware, in particular to a driving circuit of an electromagnetic heating device and a cooking utensil, the electromagnetic heating device comprises a half-bridge circuit, and the half-bridge circuit comprises a first IGBT tube and a second IGBT tube. The driving circuit comprises an MCU, a driving chip and a driving module, wherein the driving module comprises a first resistor, a second resistor, a third resistor, a fourth resistor, a first semiconductor switching device, a second semiconductor switching device and a third semiconductor switching device; the MCU is connected with the driving chip, and during PCB layout, the driving chip and the driving module can be close to the corresponding IGBT tubes, so that PCB wiring of driving signals can be shortened, the stability of signal transmission is improved, the PCB wiring can have more selectivity, the product structure layout is facilitated, and the production efficiency is improved. The problems that an existing driving scheme occupies more space positions of a PCB, and product structure layout is not facilitated are solved.

Description

Technical Field

[0001] The utility model relates to the field of kitchenware, in particular to a driving circuit of an electromagnetic heating device and a cooking utensil. Background Art

[0002] An electromagnetic heating device is a device that converts electrical energy into thermal energy using the principle of electromagnetic induction. It is often made into various types of kitchen utensils, such as induction cookers. In an electromagnetic heating device, high-frequency alternating current is provided to the electromagnetic coil by driving a bridge circuit. However, the existing driving method is to use a driver chip to drive the IGBT tubes of each bridge arm of the bridge circuit at the same time, or to use a driver chip to drive each IGBT tube. For the first driving solution, it is difficult to ensure that the driver chip can be close to the IGBT tubes of each bridge arm at the same time during PCB layout, resulting in a long PCB trace for the drive signal, occupying more space on the PCB board, which is not conducive to the product structure layout. For the second driving solution, a large number of driver chips are used, which also requires more space on the PCB board, which is not conducive to the product structure layout, and will result in higher product costs, weakening the product's market competitiveness. Therefore, it is necessary to propose a new driving circuit. Utility Model Content

[0003] The embodiment of the utility model discloses a driving circuit of an electromagnetic heating device and a cooking utensil, which are used to solve the problem that the existing driving solution occupies a large amount of space on a PCB board, which is not conducive to the structural layout of the product.

[0004] The embodiment of the utility model provides a driving circuit of an electromagnetic heating device, wherein the electromagnetic heating device includes a half-bridge circuit, the half-bridge circuit includes a first IGBT tube and a second IGBT tube, and the driving circuit includes: an MCU, a driving chip, and a driving module;

[0005] The MCU is connected to the driver chip, and the driver chip is connected to the first IGBT tube;

[0006] The driving module includes: a first resistor, a second resistor, a third resistor, a fourth resistor, a first semiconductor switch device, a second semiconductor switch device, and a third semiconductor switch device;

[0007] One end of the first resistor is connected to the MCU and one end of the second resistor respectively, and the other end of the first resistor is connected to the first end of the first semiconductor switch device;

[0008] The other end of the second resistor is connected to the first power supply;

[0009] The second end of the first semiconductor switch device is connected to one end of the third resistor, the first end of the second semiconductor switch device, and the first end of the third semiconductor switch device respectively;

[0010] The other end of the third resistor is connected to the second end of the second semiconductor switch device and is also connected to the first power supply;

[0011] The third terminal of the second semiconductor switch device is connected to one end of the fourth resistor and the third terminal of the third semiconductor switch device respectively;

[0012] The other end of the fourth resistor is connected to the second IGBT tube;

[0013] The third terminal of the first semiconductor switch device, the second terminal of the third semiconductor switch device, and the second IGBT tube are grounded.

[0014] Optionally, the first semiconductor switch device is a triode;

[0015] The first end of the first semiconductor switch device is a base, the second end of the first semiconductor switch device is a collector, and the third end of the first semiconductor switch device is an emitter.

[0016] Optionally, the first semiconductor switch device is a MOS tube;

[0017] The first terminal of the first semiconductor switch device is a gate, the second terminal of the first semiconductor switch device is a drain, and the third terminal of the first semiconductor switch device is a source.

[0018] Optionally, the second semiconductor switch device is a triode;

[0019] The first end of the second semiconductor switch device is a base, the second end of the second semiconductor switch device is a collector, and the third end of the second semiconductor switch device is an emitter.

[0020] Optionally, the second semiconductor switch device is a MOS tube;

[0021] The first terminal of the second semiconductor switch device is a gate, the second terminal of the second semiconductor switch device is a drain, and the third terminal of the second semiconductor switch device is a source.

[0022] Optionally, the three semiconductor switch devices are triodes;

[0023] The first end of the third semiconductor switch device is a base, the second end of the third semiconductor switch device is a collector, and the third end of the third semiconductor switch device is an emitter.

[0024] Optionally, the third semiconductor switch device is a MOS tube;

[0025] The first terminal of the third semiconductor switch device is a gate, the second terminal of the third semiconductor switch device is a drain, and the third terminal of the third semiconductor switch device is a source.

[0026] Optionally, the third terminal of the driver chip is connected to a fifth resistor, and is connected to the MCU through the fifth resistor;

[0027] The second end of the driving chip is connected to a second power supply;

[0028] The sixth terminal and the seventh terminal of the driver chip are connected, and are connected to a sixth resistor, and are connected to the first IGBT tube through the sixth resistor;

[0029] The eighth terminal of the driver chip is connected to the first diode, and is connected to the first power supply through the first diode;

[0030] The fifth end of the driving chip is connected to the first IGBT tube and the fourth capacitor respectively, and is connected to the first diode through the fourth capacitor.

[0031] Optionally, the half-bridge circuit further includes a first capacitor and a second capacitor; the electromagnetic heating device further includes a coil and a third capacitor;

[0032] The first IGBT tube and the second IGBT tube are connected in series;

[0033] The first capacitor is connected in series with the second capacitor;

[0034] The first IGBT tube and the second IGBT tube connected in series are connected in parallel with the first capacitor and the second capacitor connected in series;

[0035] One end of the coil is connected to the connection between the first IGBT tube and the second IGBT tube;

[0036] The other end of the coil is connected to the connection point between the first capacitor and the second capacitor;

[0037] The third capacitor is connected in parallel with the first capacitor and the second capacitor connected in series, and is connected to a third power supply.

[0038] The utility model further provides a cooking utensil, comprising a driving circuit of the electromagnetic heating device as described in any one of the above items and the electromagnetic heating device.

[0039] It can be seen from the above technical solutions that the embodiments of the present invention have the following advantages:

[0040] The embodiment of the utility model provides a driving circuit of an electromagnetic heating device, wherein the electromagnetic heating device includes a half-bridge circuit, the half-bridge circuit includes a first IGBT tube and a second IGBT tube, and the driving circuit includes: an MCU, a driving chip, and a driving module;

[0041] The MCU is connected to the driver chip, and the driver chip is connected to the first IGBT tube;

[0042] The driving module includes: a first resistor, a second resistor, a third resistor, a fourth resistor, a first semiconductor switch device, a second semiconductor switch device, and a third semiconductor switch device; one end of the first resistor is respectively connected to the MCU and one end of the second resistor, and the other end of the first resistor is connected to the first end of the first semiconductor switch device; the other end of the second resistor is connected to a first power supply; the second end of the first semiconductor switch device is respectively connected to one end of the third resistor and the first end of the second semiconductor switch device, and the first end of the third semiconductor switch device; the other end of the third resistor is connected to the second end of the second semiconductor switch device and to the first power supply; the third end of the second semiconductor switch device is respectively connected to one end of the fourth resistor and the third end of the third semiconductor switch device; the other end of the fourth resistor is connected to the second IGBT tube; the third end of the first semiconductor switch device, the second end of the third semiconductor switch device, and the second IGBT tube are grounded.

[0043] In the present invention, a driver chip is connected to a first IGBT tube for driving the first IGBT tube, and a driver module including a first resistor, a second resistor, a third resistor, a fourth resistor, a first semiconductor switch device, a second semiconductor switch device, and a third semiconductor switch device is connected to a second IGBT tube for driving the second IGBT tube. During PCB layout, the driver chip and the driver module can be placed close to the corresponding IGBT tube, thereby shortening the PCB routing of the drive signal and improving the stability of signal transmission. Furthermore, the first resistor, the second resistor, the third resistor, the fourth resistor, the first semiconductor switch device, the second semiconductor switch device, and the third semiconductor switch device are relatively small in size, so the driver module they comprise requires very little PCB board space, effectively saving space on the PCB board and allowing for more selective PCB routing, which is beneficial for product layout. Therefore, the driver circuit of an electromagnetic heating device provided by the present invention generally solves the problem that existing driver solutions occupy a large amount of space on the PCB board, which is not conducive to product layout. BRIEF DESCRIPTION OF THE DRAWINGS

[0044] In order to more clearly illustrate the embodiments of the present invention or the technical solutions in the prior art, the following briefly introduces the drawings required for use in the embodiments or the description of the prior art. Obviously, the drawings described below are only some embodiments of the present invention. For ordinary technicians in this field, other drawings can be obtained based on these drawings without paying any creative labor.

[0045] Figure 1 This is one of the structural diagrams of the driving circuit in the prior art;

[0046] Figure 2 This is the second structural diagram of the driving circuit of the prior art;

[0047] Figure 3 This is a schematic structural diagram of a driving circuit of an electromagnetic heating device provided in an embodiment of the present utility model. DETAILED DESCRIPTION

[0048] In the electromagnetic heating device driven by a half-bridge circuit, the existing driving structure diagrams are as follows: Figure 1 、 Figure 2 shown. Figure 1 In this design, a single driver chip with dual drive outputs drives both the upper and lower IGBTs of the half-bridge circuit. However, with this circuit structure, it's difficult for a single chip to be close to both the upper and lower IGBTs. This results in long PCB traces for the drive signals, and the lack of separation between high- and low-voltage drive, which can easily lead to signal crosstalk. This solution also takes up considerable space on the PCB, hindering product layout. Figure 2 In the process, two driver chips with only single-channel drive output are used to drive the upper-arm IGBT and lower-arm IGBT of the half-bridge circuit respectively. However, this solution is expensive and weakens the product competitiveness. At the same time, this solution occupies more space on the PCB board, which is not conducive to the product structure layout.

[0049] In view of this, the present invention provides a driving circuit for an electromagnetic heating device and a cooking utensil, which are used to solve the problem that the existing driving solution occupies a large amount of space on the PCB board, which is not conducive to the product structure layout.

[0050] The following is a clear and complete description of the technical solution of the present invention in conjunction with the accompanying drawings. Obviously, the embodiments described are only some of the embodiments of the present invention, not all of them. Based on the embodiments of the present invention, all other embodiments obtained by ordinary technicians in this field without making any creative efforts are within the scope of protection of the present invention.

[0051] In the description of the present invention, it should be noted that the terms "front," "back," "upper," "lower," "both ends," "center," "horizontal," "inner," and "outer" and the like, indicating orientations or positional relationships, are based on the orientations or positional relationships shown in the accompanying drawings and are intended solely to facilitate the description of the present invention and simplify the description. They are not intended to indicate or imply that the devices or components referred to must have, be constructed, or operate in a specific orientation, and therefore should not be construed as limitations on the present invention. Relational terms such as "first" and "second" are used solely to distinguish one entity from another entity or operation, and do not necessarily require or imply any actual relationship or order between these entities.

[0052] Unless otherwise expressly specified or limited, the terms "installed," "connected," "connect," "fixed," and "disposed" should be understood broadly. For example, they may refer to fixed, detachable, or integral connections; they may refer to mechanical connections, direct connections, indirect connections through an intermediary, or internal communication between two components. Those skilled in the art will understand the specific meanings of these terms in this utility model based on the specific circumstances.

[0053] See also Figure 3 An embodiment of a driving circuit of an electromagnetic heating device provided in an embodiment of the present invention, wherein the electromagnetic heating device includes a half-bridge circuit, the half-bridge circuit includes a first IGBT tube and a second IGBT tube, and the driving circuit includes: an MCU, a driving chip IC1, and a driving module;

[0054] The MCU is connected to the driver chip IC1, and the driver chip IC1 is connected to the first IGBT tube;

[0055] The driving module includes: a first resistor R1, a second resistor R2, a third resistor R3, a fourth resistor R4, a first semiconductor switch device Q1, a second semiconductor switch device Q2, and a third semiconductor switch device Q3;

[0056] One end of the first resistor R1 is connected to the MCU and one end of the second resistor R2 respectively, and the other end of the first resistor R1 is connected to the first end of the first semiconductor switch device Q1;

[0057] The other end of the second resistor R2 is connected to the first power supply VDD;

[0058] The second end of the first semiconductor switch device Q1 is connected to one end of the third resistor R3, the first end of the second semiconductor switch device Q2, and the first end of the third semiconductor switch device Q3 respectively;

[0059] The other end of the third resistor R3 is connected to the second end of the second semiconductor switch device Q2 and is also connected to the first power supply VDD;

[0060] The third end of the second semiconductor switch device Q2 is connected to one end of the fourth resistor R4 and the third end of the third semiconductor switch device Q3 respectively;

[0061] The other end of the fourth resistor R4 is connected to the second IGBT tube;

[0062] The third terminal of the first semiconductor switch device Q1 , the second terminal of the third semiconductor switch device Q3 , and the second IGBT are grounded.

[0063] It should be noted that the MCU is a microprocessor that provides control signals for driving the IGBT tube on and off. The control signal can be a level signal. For example, in existing half-bridge drive control, the MCU often uses a PWM modulation signal with a corresponding frequency according to different target powers to periodically turn the IGBT tube on and off, thereby generating an alternating magnetic field in the electromagnetic coil, thereby heating the pot placed above the coil based on the principle of electromagnetic induction. The drive module is used to amplify and logically convert the received control signal and output it to meet the gate drive current and voltage requirements of the second IGBT tube, allowing the second IGBT tube to be turned on or off. The gate of the second IGBT tube is connected to the fourth resistor. The first power supply VDD is used to provide the power supply voltage for driving the IGBT tube.

[0064] Among them, the first resistor R1, the second resistor R2, the third resistor R3, and the fourth resistor R4 are all current-limiting resistors used for current limiting. In addition, in this embodiment, one end of the second resistor R2 is connected to the first resistor R1 and the MCU, respectively, and the other end of the second resistor R2 is connected to the first power supply VDD. Therefore, when the MCU outputs a low level, the voltage at the first end of the first semiconductor switch device Q1 will not rise due to the voltage divider effect of the first resistor R1, causing erroneous turn-on. Therefore, based on the connection structure of the first resistor R1, the second resistor R2, and the MCU provided in this embodiment, erroneous turn-on of the first semiconductor switch device Q1 can be effectively avoided.

[0065] The first semiconductor switch device Q1 functions as: 1) a logic switch, implementing logic inversion; 2) the base of the first semiconductor switch device Q1 is connected to the first power supply VDD via the first resistor R1 and the second resistor R2. This ensures that the first semiconductor switch device Q1 is turned on during the initial power-up phase, effectively preventing the second semiconductor switch device Q2 and the second IGBT from being turned on accidentally, thus providing protection. The second semiconductor switch device Q2, acting as a logic switch, implements logic following and amplifies the signal. The third semiconductor power switch device Q3 acts as a discharge protection switch. When the second IGBT is turned off, the residual voltage on the G terminal of the second IGBT causes the third semiconductor power switch device Q3 to turn on, prompting a rapid discharge of the G terminal of the second IGBT to ground, thereby accelerating the turn-off of the second IGBT and promoting circuit stability. It can be understood that logic inversion refers to the inversion of a logic value (high-level signal or low-level signal), for example, converting a received high-level signal into a low-level signal for output.

[0066] The working principle of this embodiment is:

[0067] The MCU outputs control signals to the driver chip IC1 and the driver module respectively. Based on the control signals, the driver chip IC1 and the driver module respectively drive the first IGBT tube and the second IGBT tube to turn on and off, so that the heating coil L1 in the electromagnetic heating device generates an alternating magnetic field.

[0068] This embodiment uses a driver chip IC1 connected to the first IGBT tube to drive the first IGBT tube, and a driver module composed of a first resistor R1, a second resistor R2, a third resistor R3, a fourth resistor R4, a first semiconductor switch device Q1, a second semiconductor switch device Q2, and a third semiconductor switch device Q3 connected to the second IGBT tube to drive the second IGBT tube. Therefore, during the PCB routing stage, the drive signal transmission lines of the first IGBT tube and the second IGBT tube can be routed separately, thereby separating the strong current drive from the weak current drive and improving the safety of the circuit. It can be understood that the drive signal V GE The voltage is below 30V, but since the E pole of the first IGBT tube is not grounded, its voltage to ground can be as high as several hundred volts. Therefore, the driving signal of the first IGBT is a superposition of the driving signal V on the basis of several hundred volts. GE , which belongs to strong electric drive; and the driving signal of the second IGBT tube V GEThe voltage is below 30V, and the E pole of the second IGBT tube is grounded, so the driving signal of the second IGBT is also below 30V, which belongs to weak current drive. Therefore, based on the circuit structure provided in this embodiment, the driving signal transmission line of the first IGBT and the driving signal transmission line of the second IGBT can be routed separately to achieve the effect of separating strong current drive and weak current drive.

[0069] Furthermore, based on the circuit structure provided in this embodiment, during PCB layout, the driver chip IC1 and the driver module can be placed close to the corresponding IGBT tube, thereby shortening the PCB routing of the drive signal and improving the stability of signal transmission. Furthermore, the first resistor R1, the second resistor R2, the third resistor R3, the fourth resistor R4, the first semiconductor switch device Q1, the second semiconductor switch device Q2, and the third semiconductor switch device Q3 are relatively small in size, so the PCB board space required for the driver module they comprise is very small, effectively saving space on the PCB board and allowing for more selective PCB routing, which is beneficial for product layout. Therefore, the driver circuit for an electromagnetic heating device provided by the present utility model comprehensively solves the problem that existing driver solutions occupy a large amount of space on the PCB board, which is not conducive to product layout.

[0070] In a specific embodiment, the first semiconductor switch device Q1 is a triode;

[0071] A first terminal of the first semiconductor switch device Q1 is a base, a second terminal of the first semiconductor switch device Q1 is a collector, and a third terminal of the first semiconductor switch device Q1 is an emitter.

[0072] In a specific embodiment, the first semiconductor switch device Q1 is a MOS tube;

[0073] A first terminal of the first semiconductor switch device Q1 is a gate, a second terminal of the first semiconductor switch device Q1 is a drain, and a third terminal of the first semiconductor switch device Q1 is a source.

[0074] In a specific embodiment, the second semiconductor switch device Q2 is a triode;

[0075] A first terminal of the second semiconductor switch device Q2 is a base, a second terminal of the second semiconductor switch device Q2 is a collector, and a third terminal of the second semiconductor switch device Q2 is an emitter.

[0076] In a specific embodiment, the second semiconductor switch device Q2 is a MOS tube;

[0077] A first terminal of the second semiconductor switch device Q2 is a gate, a second terminal of the second semiconductor switch device Q2 is a drain, and a third terminal of the second semiconductor switch device Q2 is a source.

[0078] In a specific embodiment, the three semiconductor switch devices are triodes;

[0079] A first terminal of the third semiconductor switch device Q3 is a base, a second terminal of the third semiconductor switch device Q3 is a collector, and a third terminal of the third semiconductor switch device Q3 is an emitter.

[0080] In a specific embodiment, the third semiconductor switch device Q3 is a MOS tube;

[0081] A first terminal of the third semiconductor switch device Q3 is a gate, a second terminal of the third semiconductor switch device Q3 is a drain, and a third terminal of the third semiconductor switch device Q3 is a source.

[0082] In another preferred embodiment, the first semiconductor switch device, the second semiconductor switch device, and the third semiconductor switch device may be other switch devices except triodes and MOS transistors.

[0083] In a specific embodiment, the third terminal of the driver chip IC1 is connected to the fifth resistor R5, and is connected to the MCU through the fifth resistor R5;

[0084] The second terminal of the driver chip IC1 is connected to the second power supply VCC;

[0085] The sixth terminal and the seventh terminal of the driver chip IC1 are connected, and are connected to the sixth resistor R6, and are connected to the first IGBT tube through the sixth resistor R6;

[0086] The eighth terminal of the driver chip IC1 is connected to the first diode D1 and is connected to the first power supply VDD through the first diode D1;

[0087] The fifth terminal of the driver chip IC1 is connected to the first IGBT tube and the fourth capacitor respectively, and is connected to the first diode D1 through the fourth capacitor.

[0088] It should be noted that the first diode D1 is a unidirectional conducting diode, wherein the cathode of the first diode is connected to the eighth terminal of the driver chip IC1, and the anode of the first diode is connected to the first power supply VDD. The fourth capacitor C4 is a bootstrap capacitor. The sixth resistor R6 is connected to the gate of the first IGBT. The second power supply VCC is the power supply for the MCU.

[0089] In a specific embodiment, the driver chip IC1 may have only a single drive output, which may be an optocoupler isolation chip or a non-isolated integrated chip for driving an IGBT.

[0090] It should be noted that the optocoupler isolation chip used can be an optocoupler isolation IGBT driver chip such as LTV-3150, LTV-3150-L, etc.

[0091] In a specific embodiment, the half-bridge circuit further includes a first capacitor C1 and a second capacitor C2; the electromagnetic heating device further includes a coil L1 and a third capacitor C3;

[0092] The first IGBT tube is connected in series with the second IGBT tube;

[0093] The first capacitor C1 is connected in series with the second capacitor C2;

[0094] The first IGBT tube and the second IGBT tube connected in series are connected in parallel with the first capacitor C1 and the second capacitor C2 connected in series;

[0095] One end of the coil L1 is connected to the connection point of the first IGBT tube and the second IGBT tube;

[0096] The other end of the coil L1 is connected to the connection point of the first capacitor C1 and the second capacitor C2;

[0097] The third capacitor C3 is connected in parallel with the first capacitor C1 and the second capacitor C2 connected in series, and is connected to a third power supply DC.

[0098] It should be noted that the emitter of the first IGBT tube is connected to the collector of the second IGBT tube, and the collector of the first IGBT tube is connected to the third power supply DC. The first capacitor C1 and the second capacitor C2 are resonant capacitors, and the third capacitor C3 is a filter capacitor used to filter the rectified mains power. The third power supply DC is the power supply after rectification and filtering of the mains power. Coil L1 is an electromagnetic coil in an electromagnetic heating device, used to generate an alternating magnetic field. Among them, the first IGBT tube can be an upper bridge arm IGBT tube in a half-bridge circuit, and the second IGBT tube can be a lower bridge arm IGBT tube in a half-bridge circuit.

[0099] It should be noted that in the present invention, the ground to which the second IGBT, the third semiconductor switch device Q3, the first semiconductor switch device Q1, the second capacitor C2, and the third capacitor C3 are connected refers to the circuit reference ground and can also serve as the negative electrode of the first power supply VDD, the second power supply VCC, and the third power supply DC, respectively. Specifically, the components connected to the first power supply VDD, the second power supply VCC, and the third power supply DC are connected to the positive electrodes of the first power supply VDD, the second power supply VCC, and the third power supply DC. For example, the second resistor R2 and the third resistor R3 are connected to the positive electrode of the first power supply VDD.

[0100] The utility model also provides a cooking utensil, comprising a driving circuit of the electromagnetic heating device as described above and an electromagnetic heating device.

[0101] It should be noted that the cooking appliance in this embodiment is preferably a half-bridge electromagnetic cooker, wherein the half-bridge electromagnetic cooker refers to an electromagnetic cooker driven by a half-bridge circuit for heating.

[0102] The above is a detailed introduction to the driving circuit of an electromagnetic heating device and a cooking appliance provided by the present invention. For those skilled in the art, based on the ideas of the embodiments of the present invention, there may be changes in the specific implementation methods and application scopes. In summary, the contents of this specification should not be understood as limiting the present invention.

Claims

1. A driving circuit for an electromagnetic heating device, wherein the electromagnetic heating device comprises a half-bridge circuit, wherein the half-bridge circuit comprises a first IGBT tube and a second IGBT tube, wherein: The driving circuit includes: MCU, driving chip, and driving module; The MCU is connected to the driver chip, and the driver chip is connected to the first IGBT tube; The driving module includes: a first resistor, a second resistor, a third resistor, a fourth resistor, a first semiconductor switch device, a second semiconductor switch device, and a third semiconductor switch device; One end of the first resistor is connected to the MCU and one end of the second resistor respectively, and the other end of the first resistor is connected to the first end of the first semiconductor switch device; The other end of the second resistor is connected to the first power supply; The second end of the first semiconductor switch device is connected to one end of the third resistor, the first end of the second semiconductor switch device, and the first end of the third semiconductor switch device respectively; The other end of the third resistor is connected to the second end of the second semiconductor switch device and is also connected to the first power supply; The third terminal of the second semiconductor switch device is connected to one end of the fourth resistor and the third terminal of the third semiconductor switch device respectively; The other end of the fourth resistor is connected to the second IGBT tube; The third terminal of the first semiconductor switch device, the second terminal of the third semiconductor switch device, and the second IGBT tube are grounded.

2. The driving circuit according to claim 1, wherein: The first semiconductor switch device is a triode; The first end of the first semiconductor switch device is a base, the second end of the first semiconductor switch device is a collector, and the third end of the first semiconductor switch device is an emitter.

3. The driving circuit according to claim 1, wherein: The first semiconductor switch device is a MOS tube; The first terminal of the first semiconductor switch device is a gate, the second terminal of the first semiconductor switch device is a drain, and the third terminal of the first semiconductor switch device is a source.

4. The driving circuit according to claim 1, wherein: The second semiconductor switch device is a triode; The first end of the second semiconductor switch device is a base, the second end of the second semiconductor switch device is a collector, and the third end of the second semiconductor switch device is an emitter.

5. The driving circuit according to claim 1, wherein: The second semiconductor switch device is a MOS tube; The first terminal of the second semiconductor switch device is a gate, the second terminal of the second semiconductor switch device is a drain, and the third terminal of the second semiconductor switch device is a source.

6. The driving circuit according to claim 1, wherein: The third semiconductor switch device is a triode; The first end of the third semiconductor switch device is a base, the second end of the third semiconductor switch device is a collector, and the third end of the third semiconductor switch device is an emitter.

7. The driving circuit according to claim 6, wherein: The third semiconductor switch device is a MOS tube; The first terminal of the third semiconductor switch device is a gate, the second terminal of the third semiconductor switch device is a drain, and the third terminal of the third semiconductor switch device is a source.

8. The driving circuit according to claim 1, wherein: The third terminal of the driver chip is connected to the fifth resistor, and is connected to the MCU through the fifth resistor; The second end of the driving chip is connected to a second power supply; The sixth terminal and the seventh terminal of the driver chip are connected, and are connected to a sixth resistor, and are connected to the first IGBT tube through the sixth resistor; The eighth terminal of the driver chip is connected to the first diode, and is connected to the first power supply through the first diode; The fifth end of the driving chip is connected to the first IGBT tube and the fourth capacitor respectively, and is connected to the first diode through the fourth capacitor.

9. The driving circuit according to claim 1, wherein: The half-bridge circuit further includes a first capacitor and a second capacitor; the electromagnetic heating device further includes a coil and a third capacitor; The first IGBT tube and the second IGBT tube are connected in series; The first capacitor is connected in series with the second capacitor; The first IGBT tube and the second IGBT tube connected in series are connected in parallel with the first capacitor and the second capacitor connected in series; One end of the coil is connected to the connection between the first IGBT tube and the second IGBT tube; The other end of the coil is connected to the connection point between the first capacitor and the second capacitor; The third capacitor is connected in parallel with the first capacitor and the second capacitor connected in series, and is connected to a third power supply.

10. A cooking utensil, characterized in that: The invention comprises a driving circuit of the electromagnetic heating device according to any one of claims 1 to 9 and the electromagnetic heating device.

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