CVD apparatus and semiconductor apparatus

Abstract

The utility model provides CVD (Chemical Vapor Deposition) equipment and semiconductor equipment. According to the heating device in the CVD equipment, a temperature sensing structure is arranged on the outer surface of a heating belt, and the temperature sensing structure comprises thermosensitive pigment. As the temperature-sensitive pigment changes in color along with the change of temperature, the temperature sensing structure can present different colors and has an obvious visual distinguishing effect when the heating tape is at different temperatures, so that the temperature of the heating tape can be visually monitored, the temperature loss condition of the heating tape can be found in time, and the heating tape is convenient to use. The normal process effect of the CVD equipment or other semiconductor equipment is effectively prevented from being affected due to the fact that the temperature loss of the heating tape is not found in time. Therefore, the temperature sensing structure not only can improve the monitoring efficiency of the temperature of the heating tape, but also is low in preparation cost of the thermosensitive pigment and high in feasibility.

Description

Technical Field

[0001] The utility model relates to the technical field of semiconductor manufacturing, in particular to a CVD device and a semiconductor device. Background Art

[0002] Chemical Vapor Deposition (CVD) is a technology that uses gaseous or vaporous substances to react in the gas phase or at a gas-solid interface to generate solid deposits, and is widely used in semiconductors, optoelectronics, materials and other fields. Among them, temperature is one of the key parameters in the CVD process, which directly affects the decomposition rate of the precursor gas, the reaction rate and the quality of thin film deposition. If the temperature of the precursor gas is too high, it may cause deformation of the substrate or sintering of the reaction products, affecting the deposition quality; if the temperature of the precursor gas is too low, it will affect the activation of the precursor gas, resulting in a low reaction rate and poor film uniformity. Therefore, the prior art wraps the outer walls of the foreline and the carrier gas line of the CVD equipment with a heating belt, so as to use the heating belt to adjust the temperature of the precursor gas and ensure temperature stability.

[0003] However, the heating belts on each pipeline inevitably lose temperature. For example, the set temperature on the Fore line was 90°C, but the actual temperature was only 60°C; the set temperature on the Gas line was 110°C, but the actual temperature was only 70°C. Therefore, temperature monitoring of the heating belts on each pipeline is necessary to ensure timely detection of any loss of temperature before it affects the reaction process. However, the heating belts are an additional component of the CVD equipment, and their temperature cannot be directly monitored through the tool control module within the equipment. Installing a temperature alarm on the heating belts would be prohibitively expensive. Therefore, existing technology only allows for manual readings and recording using temperature probes during routine inspections. However, this manual monitoring method is not only inefficient but also prone to oversights.

[0004] Therefore, a new temperature monitoring structure is urgently needed to solve the above technical problems. Utility Model Content

[0005] The purpose of the utility model is to provide a CVD device and a semiconductor device to solve the technical problem of how to achieve efficient monitoring of the temperature of a heating belt at a low cost.

[0006] In order to solve the above technical problems, the utility model provides a CVD device, including a reaction chamber, a gas pipeline and a heating device;

[0007] The reaction chamber is connected to the gas pipeline, and the heating device is sleeved on the outer surface of the gas pipeline; wherein, the heating device includes: a heating belt and a temperature-sensing structure; and the temperature-sensing structure is arranged on the outer surface of the heating belt, and the temperature-sensing structure includes a thermosensitive pigment, so that the temperature-sensing structure presents different colors when the heating belt is at different temperatures.

[0008] Optionally, in the CVD device, the heating device has at least a first state and a second state; wherein,

[0009] In the first state, the temperature of the heating belt is within a threshold range, and the temperature-sensing structure is in a first color;

[0010] In the second state, the temperature of the heating belt exceeds the threshold range, and the temperature sensing structure is in a second color.

[0011] Optionally, in the CVD equipment, the threshold range includes: 50°C to 200°C or 90°C to 160°C.

[0012] Optionally, in the CVD equipment, the temperature sensing structure covers part or all of the outer surface of the heating belt.

[0013] Optionally, in the CVD device, the outer surface of the heating belt is an insulating layer, and part or all of the temperature sensing structure is integrated with the insulating layer.

[0014] Optionally, in the CVD equipment, the heating device includes a plurality of the temperature sensing structures; the plurality of temperature sensing structures are arranged at intervals on the outer surface of the heating belt.

[0015] Optionally, in the CVD equipment, the gas supply pipeline includes a front-stage pipeline and a carrier gas pipeline; the front-stage pipeline and the carrier gas pipeline are respectively connected to the reaction chamber, and the heating device is provided at the position where the front-stage pipeline and the carrier gas pipeline are connected to the reaction chamber.

[0016] Optionally, in the CVD equipment, the CVD equipment includes a plurality of the heating devices, and the plurality of the heating devices are distributed at intervals on the outer surfaces of the front-stage pipeline and the carrier gas pipeline.

[0017] Based on the same concept, the present invention also provides a semiconductor device, comprising a transport pipeline and a heating device; the heating device is sleeved on the outer surface of the transport pipeline; wherein,

[0018] The heating device includes a heating belt and a temperature-sensing structure; the temperature-sensing structure is arranged on the outer surface of the heating belt, and the temperature-sensing structure includes a thermosensitive pigment, so that the temperature-sensing structure presents different colors when the heating belt is at different temperatures.

[0019] Optionally, in the semiconductor device, the temperature sensing structure covers part or all of the outer surface of the heating belt; and / or, the outer surface of the heating belt is an insulating layer, and part or all of the temperature sensing structure is integrated with the insulating layer.

[0020] In summary, the present invention provides a CVD device and a semiconductor device. Compared with the prior art, the CVD device provided by the present invention includes a heating device, and the heating device is provided with a temperature-sensing structure on the outer surface of the heating belt. The temperature-sensing structure includes a thermosensitive pigment. Since the thermosensitive pigment will change color as the temperature changes, the thermosensitive structure will show different colors at different temperatures of the heating belt, which has an obvious visual resolution effect, thereby enabling visual monitoring of the temperature of the heating belt, facilitating timely detection of the heating belt losing temperature, and effectively avoiding the normal process effects of the CVD device or other semiconductor devices being affected by the failure to timely detect the heating belt losing temperature. Therefore, the temperature-sensing structure can not only improve the efficiency of monitoring the temperature of the heating belt, but also the preparation cost of the thermosensitive pigment is low and the feasibility is strong. BRIEF DESCRIPTION OF THE DRAWINGS

[0021] Those skilled in the art will appreciate that the accompanying drawings are provided for a better understanding of the present invention and do not constitute any limitation on the scope of the present invention.

[0022] Figure 1 This is a schematic diagram of a heating device provided in the gas pipeline of a CVD device in an embodiment of the present invention.

[0023] Figure 2 It is a structural diagram of the heating device in the embodiment of the present utility model.

[0024] Figure 3 It is a schematic structural diagram of the temperature sensing structure distributed along the circumferential direction of the heating belt in an embodiment of the present utility model.

[0025] Figure 4 It is a structural schematic diagram of the temperature-sensing structure fully covering the heating belt in the embodiment of the present utility model.

[0026] Figure 5 It is a schematic diagram of the spaced distribution of multiple temperature sensing structures in an embodiment of the present utility model.

[0027] Figure 6 It is a distribution diagram of the front-stage pipeline and the carrier gas pipeline in the embodiment of the utility model.

[0028] And, in the accompanying drawings:

[0029] 10-reaction chamber; 20-gas pipeline; 201-foreline pipeline; 202-carrier gas pipeline; 30-heating device; 301-heating belt; 302-temperature sensing structure. DETAILED DESCRIPTION

[0030] In order to make the purpose, advantages and features of the present invention clearer, the present invention is further described in detail below with reference to the accompanying drawings and specific embodiments. It should be noted that the drawings are all in a very simplified form and are not drawn to scale, and are only used to conveniently and clearly assist in explaining the purpose of the embodiments of the present invention. In addition, the structure shown in the drawings is often a part of the actual structure. In particular, the emphasis required to be shown in each drawing is different, and sometimes different proportions are used. It should also be understood that, unless otherwise specified or indicated, the terms "first", "second", "third" and the like in the specification are only used to distinguish the various components, elements, steps, etc. in the specification, and are not used to represent the logical relationship or sequential relationship between the various components, elements, steps, etc. In addition, the X-axis direction, Y-axis direction and Z-axis direction referred to in the specification of this application are three directions perpendicular to each other in three-dimensional space.

[0031] See also Figure 1 This embodiment provides a CVD device, including a reaction chamber 10, a gas pipeline 20 and a heating device 30; the reaction chamber 10 is connected to the gas pipeline 20, and the heating device 30 is sleeved on the outer surface of the gas pipeline 20; wherein, the heating device 30 includes: a heating belt 301 and a temperature sensing structure 302; wherein, the temperature sensing structure 302 is arranged on the outer surface of the heating belt 301, and the temperature sensing structure 302 includes a thermosensitive pigment, so that the temperature sensing structure 302 exhibits different colors when the heating belt 301 is at different temperatures.

[0032] It can be seen that the heating device 30 in the CVD equipment provided in this embodiment utilizes the characteristic that the color of the thermosensitive pigment in the temperature-sensing structure 302 changes with temperature, thereby realizing visual monitoring of the temperature of the heating belt 301. This not only improves the efficiency of monitoring the temperature of the heating belt 301, but also reduces the preparation cost of the thermosensitive pigment and makes it highly feasible.

[0033] The following is combined with Figures 1 to 6 The CVD equipment provided in this embodiment is described in detail.

[0034] See also Figure 2The heating device 30 in the CVD equipment includes a heating belt 301 and a temperature-sensing structure 302. The heating belt 301 is a product used for heating and heat preservation of industrial equipment and is mainly composed of electric heating material and insulating material. The electric heating material can be multiple parallel metal wire cores, between which a semi-conductive polymer composite PTC material can be uniformly extruded and injection-molded to form a conductive belt, which is used to achieve temperature regulation in the industrial equipment pipeline. The insulating material can be non-woven fabric or alkali-free glass fiber, which has good temperature resistance and insulation properties.

[0035] The temperature-sensing structure 302 is provided on the outer surface of the heating belt 301, and is used to realize visual monitoring of the temperature of the heating belt 301. Specifically, the temperature-sensing structure 302 includes a thermosensitive pigment. The thermosensitive pigment is a thermochromic pigment. That is, as the temperature changes, the thermosensitive pigment will show a color change. Based on this, when the temperature of the heating belt 301 changes to a certain range, the color of the temperature-sensing structure 302 on its surface will change color as the temperature changes, so that the temperature abnormality of the heating belt 301 can be intuitively judged, and efficient monitoring of the temperature of the heating belt 301 can be realized.

[0036] Furthermore, to meet the process requirements of semiconductor manufacturing, the temperature-sensing structure 302 must not only be sensitive to temperature changes but also be reversible, non-volatile, and heat-resistant and durable. It should be understood that reversibility means that the heat-sensitive pigment used in the temperature-sensing structure 302 is not a disposable material but can return to its original color with temperature changes, thus meeting the requirement for recyclability. Non-volatility ensures that the temperature-sensing structure 302 does not affect the dust-free environment of the semiconductor process, avoiding problems such as wafer contamination caused by volatilization or oxidation of the heat-sensitive pigment. Temperature resistance is required to meet the temperature range of the semiconductor process. For example, when the heating device 30 is used in CVD equipment, the temperature-sensing material 20 must be able to withstand temperatures of 200°C. Furthermore, durability is required to ensure the stability of temperature monitoring. Therefore, conventional inorganic materials are difficult to use in semiconductor equipment due to their irreversibility and limited temperature range. Conventional organic materials are also difficult to use in semiconductor equipment due to their low temperature range, material instability, and environmental pollution caused by volatility. In this regard, the applicant has found through research that the thermosensitive material obtained by co-doping metal salt / rare earth salt materials in a controlled ratio can meet the above requirements.

[0037] Preferably, the heat-sensitive material includes but is not limited to: metal salt Al2-xFexO3, vanadate Pure BiVO4, rare earth salt Ln6MoO 12 And with rare earth salt Ln6MoO 12 For example, when setting Ln6MoO 12When Ln:Mo=6:1, the color change of Er / Mo components is the main one. When the temperature is within the range of 160℃~180℃, it appears sunset yellow; when the temperature is outside this range, it appears yellow. 12 When a certain proportion of Nd is introduced into the heat exchanger, the color can change from pistachio green below 90°C to asparagus green above 90°C. It should be noted that this embodiment does not limit the specific type and composition of the heat-sensitive material, but it must exhibit different colors within and outside the temperature threshold range to enable visual temperature monitoring of the heating belt 301.

[0038] Based on this, the heating device 30 has at least a first state and a second state. In the first state, when the temperature of the heating belt 301 is within a threshold range, the temperature-sensing structure 302 displays a first color. In the second state, when the temperature of the heating belt 301 exceeds the threshold range, the temperature-sensing structure 302 displays a second color. Optionally, when the heating device 30 is used in a CVD device, the threshold range includes: 50°C to 200°C or 90°C to 160°C. For example, the threshold range is 90°C to 160°C. When the temperature of the heating belt 301 is within the threshold, the temperature-sensing structure 302 displays a first color of orange. When the temperature of the heating belt 301 exceeds the threshold, the temperature-sensing structure 302 displays a second color of yellow. Furthermore, the second color can be defined as a color different from the first color. Thus, when the temperature of the heating belt 301 is above the threshold, the temperature-sensing structure 302 displays a second color of red. When the temperature of the heating belt 301 is below the threshold, the temperature-sensing structure 302 displays a second color of yellow. Based on this, the temperature state of the heating belt 301 can be accurately determined. Optionally, the heating device 30 can also have multiple other states. For example, the temperature sensing structure 302 exhibits obvious color changes within multiple different temperature thresholds, which is helpful for further determining the temperature range of the heating belt 301.

[0039] See also Figures 2 to 5, this embodiment does not limit the arrangement of the temperature-sensing structure 302 relative to the heating belt 301. Preferably, the temperature-sensing structure 302 covers part or all of the outer surface of the heating belt 301. And / or, part or all of the temperature-sensing structure 302 is blended with the insulating layer on the outer surface of the heating belt 301. In other words, the temperature-sensing structure 302 can be directly attached to the outer surface of the heating belt 301, or its heat-sensitive pigment can be doped into the insulating layer on the outer surface of the heating belt 301 to achieve the mixing of the heat-sensitive pigment and the material of the insulating layer, or it can be interwoven with the insulating layer to form a whole. Furthermore, this embodiment does not limit the specific distribution of the temperature-sensing structure 302 relative to the heating belt 301. For example, Figure 2 and Figure 3 As shown, the temperature sensing structure 302 covers part of the surface of the heating belt 301. And because the heating belt 301 is generally installed on the pipeline of the equipment, the heating belt 301 can be cylindrical, and the temperature sensing structure 302 can be distributed along the axial direction or the lateral direction of the heating belt 301, or can be distributed along the axial direction and the lateral direction at the same time. Figure 4 As shown, the temperature sensing structure 302 covers the entire outer surface of the heating belt 301. Further, this embodiment does not limit the specific shape of the temperature sensing structure 302, and can be as follows: Figure 2 and Figure 3 The rectangle shown can also be Figure 5 The circular shape shown in FIG. 1 or other shapes. Preferably, the heating device 30 may include a plurality of the temperature sensing structures 302, such as Figure 5 As shown, the temperature sensing structures 302 are distributed at intervals on the outer surface of the heating belt 301 .

[0040] See also Figure 1 and Figure 6 , the CVD equipment includes: a reaction chamber 10, a gas pipeline 20 and the above-mentioned heating device 30; the reaction chamber 10 is connected to the gas pipeline 20, and the heating device 30 is sleeved on the outer surface of the gas pipeline 20. The gas pipeline 20 includes a front-stage pipe 201 and a carrier gas pipe 202. The front-stage pipe 201 serves as a total exhaust pipe for reaction gas, by-products and cleaning gas, and is directly connected to the reaction chamber 10. The carrier gas pipe 202 is also connected to the reaction chamber 10, and is used to transport the carrier gas to the reaction chamber 10. The carrier gas is usually an inert gas to play a protective role during the reaction process. Since the temperature of the reaction gas and the carrier gas when they enter the reaction chamber 10 has a direct impact on the reaction process, as shown in FIG. Figure 1As shown, the CVD equipment provided in this embodiment is respectively provided with the heating device 30 at the position where the front-stage pipeline 201 and the carrier gas pipeline 202 are connected to the reaction chamber 10, so as to realize visual monitoring of the temperature of the heating belt 301 at this position, and further realize monitoring of the temperature of the reaction gas and the carrier gas entering the reaction chamber 10, ensuring that the loss of temperature of the heating belt 301 can be discovered in time, and effectively avoiding affecting the normal process effect of the CVD equipment due to failure to discover the loss of temperature of the heating belt 301 in time.

[0041] Preferably, the CVD apparatus may be provided with a plurality of heating devices 30, which are spaced apart and distributed on the outer surfaces of the foreline 201 and the carrier gas line 202. This embodiment does not limit the specific distribution of the heating devices 30. Alternatively, if cost is not a factor, the heating devices 30 may completely surround the foreline 201 and the carrier gas line 202.

[0042] Furthermore, because the temperature ranges of the gases in the foreline 201 and the carrier gas line 202 may vary at different locations, the temperature thresholds of the various heating devices 30 located in the foreline 201 and the carrier gas line 202 may differ. For example, in a CVD apparatus, the total temperature range of the gases in the foreline 201 and the carrier gas line 202 is 50°C to 200°C. The gas temperature in the pipes farther from the reaction chamber 10 is lower, while the gas temperature in the pipes closer to the reaction chamber 10 is higher. Therefore, the first threshold range of the temperature sensing structure 302 in the heating device 30 located at the junction of the foreline 201 and the carrier gas line 202 with the reaction chamber 10 may be 90°C to 160°C. The second threshold range of the temperature sensing structure 302 in the heating device 30 located farther from the reaction chamber 10 may be 50°C to 200°C. Based on this, when the temperature of the heating belt 301 located far away from the reaction chamber 10 is 100°C, the corresponding temperature-sensing structure 302 is in the first color, indicating that the temperature of the heating belt 301 is normal; and when the temperature of the heating belt 301 located close to the reaction chamber 10 is 100°C, the corresponding temperature-sensing structure 302 is in the second color, indicating that the temperature of the heating belt 301 is abnormal.

[0043] Preferably, the heating device 30 provided in this embodiment is not limited to use in CVD equipment, but can also be applied to other semiconductor equipment. Therefore, based on the same concept, this embodiment also provides a semiconductor device, including a transport pipeline and the above-mentioned heating device 30. Preferably, the heating device 30 is mounted on the outer surface of the transport pipeline; wherein the heating device 30 includes a heating belt 301 and a temperature-sensing structure 302; and the temperature-sensing structure 302 is disposed on the outer surface of the heating belt 301, and the temperature-sensing structure 302 includes a heat-sensitive pigment so that the temperature-sensing structure 302 exhibits different colors at different temperatures of the heating belt 301. Furthermore, the temperature-sensing structure 302 covers part or all of the outer surface of the heating belt 301; and / or the outer surface of the heating belt 301 is an insulating layer, and part or all of the temperature-sensing structure 302 is intertwined with the insulating layer. The heating device 30 in the semiconductor device can refer to the relevant description of the heating device 30 in the CVD device above, and this embodiment will not be repeated here.

[0044] In summary, this embodiment provides a CVD device and a semiconductor device. The CVD device includes a heating device 30, and the heating device 30 is provided with a temperature-sensing structure 302 on the outer surface of the heating belt 301, and the temperature-sensing structure 302 includes a thermosensitive pigment. Since the thermosensitive pigment changes color as the temperature changes, the thermosensitive structure 302 will show different colors when the heating belt 301 is at different temperatures, which has a significant visual discrimination effect, thereby enabling visual monitoring of the temperature of the heating belt 301, facilitating timely detection of the loss of temperature of the heating belt 301, and effectively avoiding the normal process effects of the CVD device or other semiconductor devices being affected by the failure to timely detect the loss of temperature of the heating belt 301. Therefore, the temperature-sensing structure 302 can not only improve the efficiency of monitoring the temperature of the heating belt 301, but also the preparation cost of the thermosensitive pigment is low and the feasibility is strong.

[0045] Furthermore, it should be recognized that although the present invention has been disclosed above with reference to preferred embodiments, the above embodiments are not intended to limit the present invention. Any person skilled in the art will be able to utilize the above-disclosed technical content to make numerous possible variations and modifications to the present invention, or to modify the present invention into equivalent embodiments with equivalent variations, without departing from the scope of the present invention. Therefore, any simple modifications, equivalent variations, and modifications to the above embodiments that do not depart from the present invention and are based on the technical essence of the present invention remain within the scope of protection of the present invention.

Claims

1. A CVD device, characterized in that: It includes a reaction chamber, a gas pipeline and a heating device; The reaction chamber is connected to the gas pipeline, and the heating device is sleeved on the outer surface of the gas pipeline; wherein, the heating device includes: a heating belt and a temperature-sensing structure; and the temperature-sensing structure is arranged on the outer surface of the heating belt, and the temperature-sensing structure includes a thermosensitive pigment, so that the temperature-sensing structure presents different colors when the heating belt is at different temperatures.

2. The CVD apparatus according to claim 1, wherein The heating device has at least a first state and a second state; wherein, In the first state, the temperature of the heating belt is within a threshold range, and the temperature-sensing structure is in a first color; In the second state, the temperature of the heating belt exceeds the threshold range, and the temperature sensing structure is in a second color.

3. The CVD apparatus according to claim 2, wherein: The threshold range includes: 50°C to 200°C or 90°C to 160°C.

4. The CVD apparatus according to claim 1, wherein The temperature sensing structure covers part or all of the outer surface of the heating belt.

5. The CVD apparatus according to claim 1, wherein The outer surface of the heating belt is an insulating layer, and part or all of the temperature sensing structure is blended and connected with the insulating layer.

6. The CVD apparatus according to claim 1, wherein The heating device includes a plurality of temperature sensing structures; the plurality of temperature sensing structures are arranged at intervals on the outer surface of the heating belt.

7. The CVD apparatus according to claim 1, wherein The gas delivery pipeline includes a front-stage pipeline and a carrier gas pipeline; the front-stage pipeline and the carrier gas pipeline are respectively connected to the reaction chamber, and the heating device is sleeved at the positions where the front-stage pipeline and the carrier gas pipeline are connected to the reaction chamber.

8. The CVD apparatus according to claim 7, wherein The CVD equipment includes a plurality of the heating devices, which are distributed at intervals on the outer surfaces of the front-stage pipeline and the carrier gas pipeline.

9. A semiconductor device, characterized in that: It includes a transport pipeline and a heating device; the heating device is sleeved on the outer surface of the transport pipeline; wherein, The heating device includes a heating belt and a temperature-sensing structure; the temperature-sensing structure is arranged on the outer surface of the heating belt, and the temperature-sensing structure includes a thermosensitive pigment, so that the temperature-sensing structure presents different colors when the heating belt is at different temperatures.

10. The semiconductor device according to claim 9, wherein The temperature sensing structure covers part or all of the outer surface of the heating belt; and / or the outer surface of the heating belt is an insulating layer, and part or all of the temperature sensing structure is blended with the insulating layer.

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