Integrated semiconductor flexible dust-free drag chain cable

By covering the thread body and the pipe body with a high-temperature resistant film, an integrated sheath layer is formed, which solves the wear resistance, dust resistance, temperature resistance and flexibility of the existing drag chain in the semiconductor field, and realizes the protection and separation of the thread body and the pipe body, adapting to a variety of installation needs.

CN223260377UActive Publication Date: 2025-08-22DONGGUAN TEAN CABLE TECH CO LTD
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Patent Information

Application Number
CN202422456962.X
Authority / Receiving Office
CN · China
Patent Type
Utility models(China)
Current Assignee / Owner
Filing Date
2024-10-11
Publication Date
2025-08-22
Estimated Expiration
2034-10-11

AI Technical Summary

Technical Problem

The existing drag chain structure cannot meet the requirements of wear resistance, air release, dust accumulation, high and low temperature resistance and corrosion resistance in the semiconductor field, and is complicated to assemble, and is prone to shifting the position of the line or pipe body.

Method used

The wire and pipe body are coated with a high-temperature resistant film, and the integrated sheath layer is formed by integrated crimping, which has flexible and continuous bending properties, separates the adjacent wire and pipe body, and prevents frictional damage.

Benefits of technology

It realizes effective protection of the line body and the pipe body, has dustproof effect, has good flexibility and bending characteristics, and is suitable for various installation occasions to avoid surface damage caused by friction and collision of the line body or pipe body.

✦ Generated by Eureka AI based on patent content.

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Abstract

The utility model discloses an integrated semiconductor flexible dust-free drag chain cable, which comprises a sheath layer and a functional part, the sheath layer is coated outside the functional part to form an integrated drag chain structure, and the functional part comprises at least two wire bodies and / or pipe bodies which are arranged in parallel at intervals and are used for realizing signal or medium transmission; the sheath layer is coated outside at least two wire bodies and / or pipe bodies to form a protective layer body, and a separation part is formed between two adjacent wire bodies and / or pipe bodies and is used for separating the adjacent wire bodies and / or pipe bodies; and the sheath layer comprises at least two high-temperature-resistant film layers, and the at least two high-temperature-resistant film layers are overlapped with each other and then coat the outside of the functional part, and form an integral outer coating layer structure through thermal compression bonding. According to the utility model, the wire body and the pipe body are wrapped by the high-temperature-resistant film and then are integrally crimped and formed, so that the internal wire body and the internal pipe body can be effectively protected, and good flexibility and continuous bending performance are achieved.
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Description

Technical Field

[0001] The utility model relates to the field of cables, in particular to an integrated semiconductor flexible dust-free drag chain cable. Background Art

[0002] A drag chain, also known as a cable and wire protection drag chain, is a device that restrains cables, wires, or air and hydraulic pipes to facilitate their rotation and movement. In practice, a drag chain can be used to securely bind multiple wires together for overall movement and transport. Drag chains are used in applications involving reciprocating motion, providing traction and protection for internal wires and pipes. Current drag chains are mostly modular, assembling multiple wires or pipes within the drag chain's mounting space and securing them with the chain. This method requires significant assembly and disassembly work, and over extended periods of use, the wires or pipes can shift position, rendering the assembly inoperable. This is particularly true in the semiconductor field, where use in cleanrooms requires drag chains to not only maintain electrical connections and loads, but also possess properties such as wear resistance, no outgassing, no dust accumulation, high and low temperature resistance, and corrosion resistance. Existing drag chains cannot meet these requirements. Given this background, it is necessary to design an integrated, flexible drag chain. Utility Model Content

[0003] The technical problem to be solved by the utility model is to address the deficiencies of the above-mentioned existing technologies and provide an integrated semiconductor flexible dust-free drag chain cable that is formed by wrapping the wire body and the tube body with a high-temperature resistant film and then crimping them into an integrated form, which can effectively protect the internal wire body and the tube body and has good flexibility and continuous bending performance.

[0004] The technical solution adopted by the present invention is as follows: an integrated semiconductor flexible dust-free drag chain cable, comprising a sheath layer and a functional part, wherein the sheath layer is coated on the outside of the functional part to form an overall drag chain structure, wherein the functional part comprises at least two wire bodies and / or tube bodies arranged in parallel and spaced apart, for realizing signal or medium transmission; the sheath layer is coated on the outside of at least two wire bodies and / or tube bodies to form a protective layer body, and a partition is formed between two adjacent wire bodies and / or tube bodies to separate adjacent wire bodies and / or tube bodies; the sheath layer comprises at least two layers of high-temperature resistant film layers, and the at least two layers of high-temperature resistant film layers are overlapped with each other and coated on the outside of the functional part, and formed into an overall outer coating layer structure by hot pressing.

[0005] Preferably, the functional part includes a first wire body, a second wire body, a third wire body, a tube body and a fourth wire body arranged in sequence and at intervals, wherein the first wire body, the second wire body, the third wire body and the fourth wire body are used to transmit signals; the tube body is used to transmit media.

[0006] Preferably, the first wire body and the fourth wire body are a three-core cable structure, which includes three twisted wire cores inside, and the three twisted wire cores are coated with an ePTFE winding layer on the outside, and the twisted wire cores are covered and fixed as a whole by the ePTFE winding layer; the outside of the ePTFE is coated with a sheath layer.

[0007] Preferably, the wire core comprises a tinned copper core wire and an ETFE insulation layer from the inside out; the tinned copper core wire is used to transmit signals; and the ETFE insulation layer is coated on the outside of the tinned copper core wire for protection and insulation.

[0008] Preferably, the second wire body and the third wire body are a four-core cable structure, which internally protects four twisted wire cores, and the four twisted wire cores are externally coated with an ePTFE winding layer, and the twisted wire cores are integrally coated and fixed by the ePTFE winding layer; the outside of the ePTFE is coated with a sheath layer.

[0009] Preferably, a polyester material body is filled between the four twisted cores; the polyester material body is filled between the cores and twisted with the four cores to separate the cores and improve the strength.

[0010] Preferably, the wire core comprises a tinned copper core wire and an ETFE insulation layer from the inside out; the tinned copper core wire is used to transmit signals; and the ETFE insulation layer is coated on the outside of the tinned copper core wire for protection and insulation.

[0011] Preferably, the tube body includes an ePTFE winding layer and a polyurethane tube body from the inside out, wherein the middle part of the polyurethane tube body is a tube hole for transmitting the medium; the ePTFE winding layer is wrapped around the outside of the polyurethane tube body for protection and isolation.

[0012] The beneficial effects of the present invention are:

[0013] In response to the defects and shortcomings of the existing technology, the utility model independently developed and designed an integrated semiconductor flexible dust-free drag chain cable that uses a high-temperature resistant film to cover the wire body and tube body and then press-fit into an integrated form. It can effectively protect the internal wire body and tube body and has good flexibility and continuous bending performance.

[0014] The present invention is applied to the semiconductor field and aims to design an integrated drag chain line for the semiconductor field. The present invention adopts a multi-layered, superimposed, high-temperature resistant film as a coating material. The multi-layered high-temperature resistant film is superimposed and coated on the outside of the spaced wires or tubes, and the gaps between adjacent wires or tubes are bonded up and down, and then formed by hot pressing to finally form an integrated drag chain line structure. This manufacturing method can achieve closed full coating of the wires or tubes through the sheath layer formed by the heat-resistant and high-temperature film, effectively play a role of protection and isolation, and have a dust-proof effect. At the same time, the partition formed by the sheath layer between adjacent wires and tubes effectively realizes the separation of adjacent wires or tubes, avoiding the use of Surface damage caused by mutual friction and collision between adjacent wires or tubes during transportation; in addition, based on the material properties of the high-temperature resistant film, the sheath layer formed by its hot pressing has flexibility while being resistant to high temperatures, so that the overall drag chain wire has good bending properties and can adapt to various usage scenarios that require bending and installation; further, the number of wires and tubes of the present invention can be set according to actual use requirements. On the surface of an independent wire or tube close to the sheath layer, the present invention adopts an ePTFE wrapping layer as a covering wrapping layer. The material properties of the ePTFE wrapping layer are utilized to protect the internal core of the wire or tube while effectively protecting and isolating the internal core during the hot pressing process of the sheath layer. BRIEF DESCRIPTION OF THE DRAWINGS

[0015] Figure 1 It is a cross-sectional view of the present invention.

[0016] Figure 2 This is one of the partial cross-sectional views of the present invention.

[0017] Figure 3 This is the second partial cross-sectional view of the present invention.

[0018] Figure 4 This is the third partial sectional view of the present invention. DETAILED DESCRIPTION

[0019] The following will be combined with the drawings in the embodiments of the present invention to clearly and completely describe the technical solutions in the embodiments of the present invention. Obviously, the embodiments described are only part of the embodiments of the present invention, not all of the embodiments. Based on the embodiments of the present invention, all other embodiments obtained by ordinary technicians in this field without making creative efforts are within the scope of protection of the present invention.

[0020] It should be noted that all directional indications such as up, down, left, right, front, back, etc. in the embodiments of the present invention are only used to explain the relative position relationship and movement status of the various components in a certain specific posture. If the specific posture changes, the directional indication will also change accordingly.

[0021] In this utility model, unless otherwise specified or limited, the terms "connection" and "fixation" should be understood in a broad sense. For example, "connection" can mean fixed connection, detachable connection, or integration; it can mean mechanical connection or electrical connection; it can mean direct connection or indirect connection through an intermediate medium; it can mean internal communication between two elements or interaction between two elements, unless otherwise specified. For those skilled in the art, the specific meanings of the above terms in this utility model can be understood according to specific circumstances.

[0022] like Figure 1 As shown, the utility model proposes an integrated semiconductor flexible dust-free drag chain cable, comprising a sheath layer 1 and a functional part, wherein the sheath layer 1 is coated on the outside of the functional part to form an overall drag chain structure, wherein the functional part comprises at least two wire bodies and / or tube bodies arranged in parallel and spaced apart, for realizing signal or medium transmission; the sheath layer 1 is coated on the outside of at least two wire bodies and / or tube bodies to form a protective layer body, and a partition G is formed between two adjacent wire bodies and / or tube bodies to separate adjacent wire bodies and / or tube bodies; the sheath layer 1 comprises at least two layers of high-temperature resistant film layers, and the at least two layers of high-temperature resistant film layers are overlapped with each other and coated on the outside of the functional part, and are formed into an overall outer coating layer structure by hot pressing. Example 1

[0023] like Figure 1 As shown, as an embodiment of the present invention, the functional part of this embodiment includes a first wire body B, a second wire body C, a third wire body D, a tube body E and a fourth wire body F arranged in sequence, wherein the first wire body B, the second wire body C, the third wire body D and the fourth wire body F are used to transmit signals; the tube body E is used to transmit media. Example 2

[0024] like Figures 1 to 2 As shown, as an embodiment of the present invention, the first wire body B and the fourth wire body F of this embodiment are a three-core cable structure, which includes three twisted wire cores inside, and the three twisted wire cores are coated with an ePTFE winding layer 2 on the outside, and the twisted wire cores are integrally coated and fixed by the ePTFE winding layer; the outside of the ePTFE is coated with a sheath layer 1.

[0025] The ePTFE wrapping layer 2 is made of a polytetrafluoroethylene microporous membrane laminated with ordinary fabrics through a special process, and has good toughness and waterproof properties.

[0026] The wire core includes a tinned copper core wire 4 and an ETFE insulation layer 3 from the inside to the outside; the tinned copper core wire 4 is used to transmit signals; the ETFE insulation layer 3 is coated on the outside of the tinned copper core wire 4 for protection and insulation.

[0027] The specification of the above-mentioned tinned copper core wire 4 is 26AWG (19 / 0.1mm), and its temperature resistance is 180 degrees Celsius; the ETFE is an ethylene-tetrafluoroethylene copolymer, a high-performance fluoroplastic material, including good heat resistance, chemical resistance, electrical insulation performance, as well as high radiation resistance and mechanical properties, and its tensile strength can reach 50MPa.

[0028] The cores of the first wire body B and the fourth wire body F are composed of a tinned copper core wire 4 and an ETFE insulation layer 3, and have a diameter of 1 mm. In addition, the overall diameter of the first wire body B and the fourth wire body F after being covered by the sheath layer 1 is 3.4 mm. Example 3

[0029] like Figure 1 、 Figure 3 As shown, as an embodiment of the present invention, the second wire body C and the third wire body D of this embodiment are a four-core cable structure, which internally protects four twisted wire cores, and the four twisted wire cores are externally coated with an ePTFE winding layer 2, and the twisted wire cores are integrally coated and fixed by the ePTFE winding layer; the outside of the ePTFE is coated with a sheath layer 1.

[0030] A polyester material body 7 is filled between the four twisted cores. The polyester material body 7 is filled between the cores and twisted with the four cores to separate the cores and increase the strength.

[0031] The wire core includes a tinned copper core wire 4 and an ETFE insulation layer 3 from the inside to the outside; the tinned copper core wire 4 is used to transmit signals; the ETFE insulation layer 3 is coated on the outside of the tinned copper core wire 4 for protection and insulation.

[0032] The specification of the above-mentioned tinned copper core wire 4 is 22AWG (19 / 0.61mm), and its temperature resistance is 180 degrees Celsius; the ETFE is an ethylene-tetrafluoroethylene copolymer, a high-performance fluoroplastic material, including good heat resistance, chemical resistance, electrical insulation performance, as well as high radiation resistance and mechanical properties, and its tensile strength can reach 50MPa.

[0033] The core of the second wire body C is composed of a tinned copper core wire 4 and an ETFE insulation layer 3, and has a diameter of 1 mm. In addition, the overall diameter of the second wire body C after being covered by the sheath layer 1 is 3.6 mm.

[0034] The core of the third wire body D is composed of a tinned copper core wire 4 and an ETFE insulation layer 3, and has a diameter of 1.6 mm. In addition, the overall diameter of the third wire body D after being covered by the sheath layer 1 is 4.7 mm. Example 4

[0035] like Figure 1 、 Figure 4 As shown, as an embodiment of the present invention, the tube body E of this embodiment includes an ePTFE winding layer 2 and a polyurethane tube body 8 from the inside to the outside, wherein the middle part of the polyurethane tube body 8 is a tube hole 0 for transmitting the medium; the ePTFE winding layer 2 is wrapped around the outside of the polyurethane tube body 8 for protection and isolation.

[0036] The polyurethane tube body 8 is made of PU polyurethane material, and the inner diameter of the tube hole 0 is 1.8 mm; the diameter of the line formed by the tube body E covered by the sheath layer 1 is 4.2 mm.

[0037] Furthermore, the utility model designs an integrated semiconductor flexible dust-free drag chain cable that uses a high-temperature resistant film to cover the wire body and the tube body and then press-fits them together to effectively protect the internal wire body and the tube body, and has good flexibility and continuous bending performance. The utility model is applied to the semiconductor field and aims to design an integrated drag chain line for the semiconductor field. The utility model uses a multi-layered, superimposed, high-temperature resistant film as a covering material. The multi-layer high-temperature resistant film is superimposed and covered on the outside of the spaced wire bodies or tube bodies, and at the same time, the gaps between adjacent wire bodies or tube bodies are bonded up and down, and then formed by hot pressing to finally form an integrated drag chain line structure. This manufacturing method can achieve closed full covering of the wire body or tube body through the sheath layer formed by the heat-resistant high-temperature film, effectively play a role of protection and isolation, and have a dust-proof effect; at the same time, the partition formed by the sheath layer between adjacent wire bodies and tube bodies effectively realizes the separation of adjacent wire bodies or tube bodies, avoiding the use of Surface damage caused by mutual friction and collision between adjacent wires or tubes during transportation; in addition, based on the material properties of the high-temperature resistant film, the sheath layer formed by its hot pressing has flexibility while being resistant to high temperatures, so that the overall drag chain wire has good bending properties and can adapt to various usage scenarios that require bending and installation; further, the number of wires and tubes of the present invention can be set according to actual use requirements. On the surface of an independent wire or tube close to the sheath layer, the present invention adopts an ePTFE wrapping layer as a covering wrapping layer. The material properties of the ePTFE wrapping layer are utilized to protect the internal core of the wire or tube while effectively protecting and isolating the internal core during the hot pressing process of the sheath layer.

[0038] Furthermore, the specific parameters of the present invention are:

[0039] Application fields: semiconductor field;

[0040] Working voltage 300v;

[0041] Minimum test voltage: conductor / conductor is 3000VDC, conductor / shield is 3000VDC;

[0042] Working temperature: -20℃-180℃;

[0043] Minimum bending radius: 7.5 times the cable diameter for continuous bending.

[0044] The embodiments of the present invention are only to introduce its specific implementation methods and are not intended to limit its scope of protection. Those skilled in the art may make certain modifications inspired by the present embodiments. Therefore, any equivalent changes or modifications made in accordance with the scope of the present invention are within the scope of the claims of the present invention.

Claims

1. An integrated semiconductor flexible dust-free drag chain cable, characterized by: It comprises a sheath layer (1) and a functional part, wherein the sheath layer (1) is coated on the outside of the functional part to form an integral drag chain structure, wherein: The functional part includes at least two wire bodies and / or tube bodies arranged in parallel and at intervals, and is used to realize signal or medium transmission; The sheath layer (1) is coated on the outside of at least two wire bodies and / or tube bodies to form a protective layer body, and a partition (G) is formed between two adjacent wire bodies and / or tube bodies to separate the adjacent wire bodies and / or tube bodies; The sheath layer (1) comprises at least two high-temperature resistant film layers, which are overlapped with each other and coated on the outside of the functional part, and are formed into an integral outer coating layer structure by heat pressing.

2. The integrated semiconductor flexible dust-free drag chain cable according to claim 1, characterized in that: The functional part includes a first wire body (B), a second wire body (C), a third wire body (D), a tube body (E) and a fourth wire body (F) arranged in sequence and at intervals, wherein the first wire body (B), the second wire body (C), the third wire body (D) and the fourth wire body (F) are used to transmit signals; and the tube body (E) is used to transmit a medium.

3. The integrated semiconductor flexible dust-free drag chain cable according to claim 2, characterized in that: The first wire body (B) and the fourth wire body (F) are three-core cable structures, each of which includes three mutually twisted wire cores, and the three mutually twisted wire cores are externally coated with an ePTFE winding layer (2), and the twisted wire cores are entirely coated and fixed by the ePTFE winding layer; the ePTFE is externally coated with a sheath layer (1).

4. The integrated semiconductor flexible dust-free drag chain cable according to claim 3, characterized in that: The wire core comprises a tinned copper core wire (4) and an ETFE insulation layer (3) from the inside out; the tinned copper core wire (4) is used for transmitting signals; and the ETFE insulation layer (3) is coated on the outside of the tinned copper core wire (4) for protection and insulation.

5. The integrated semiconductor flexible dust-free drag chain cable according to claim 2, characterized in that: The second wire body (C) and the third wire body (D) are four-core cable structures, wherein the four twisted wire cores are protected internally, and the four twisted wire cores are externally coated with an ePTFE winding layer (2), and the twisted wire cores are integrally coated and fixed by the ePTFE winding layer; the ePTFE is externally coated with a sheath layer (1).

6. The integrated semiconductor flexible dust-free drag chain cable according to claim 5, characterized in that: A polyester material body (7) is filled between the four mutually twisted wire cores; the polyester material body (7) is filled between the wire cores and is twisted with the four wire cores to separate the wire cores and increase strength.

7. The integrated semiconductor flexible dust-free drag chain cable according to claim 5, characterized in that: The wire core comprises a tinned copper core wire (4) and an ETFE insulation layer (3) from the inside out; the tinned copper core wire (4) is used for transmitting signals; and the ETFE insulation layer (3) is coated on the outside of the tinned copper core wire (4) for protection and insulation.

8. The integrated semiconductor flexible dust-free drag chain cable according to claim 2, characterized in that: The tube body (E) comprises an ePTFE winding layer (2) and a polyurethane tube body (8) from the inside out, wherein the middle portion of the polyurethane tube body (8) is a tube hole (0) for transmitting a medium; and the ePTFE winding layer (2) is wrapped around the outside of the polyurethane tube body (8) for protection and isolation.