DFN packaging high-power radio frequency device

Abstract

The utility model discloses a DFN packaging high-power radio frequency device, which comprises a plastic packaging material layer, and a base island, a chip, a lead and a pin which are arranged in the plastic packaging material layer, the chip is arranged on the base island, and the chip and the base island are bonded through a first bonding material layer; the pins are located on the two sides of the base island, gaps are formed between the pins on the two sides and the base island, and the chip is electrically connected with the pins through leads; the upper portions of the two sides of the base island horizontally extend outwards to form protrusions, and the pins horizontally extend inwards to form protrusions, so that gaps between the pins on the two sides and the base island are narrow in the upper portion and wide in the lower portion. According to the technical scheme, the DFN packaging high-power radio frequency device structure is realized, the problem of a radio frequency device in the prior art is solved by using DFN packaging, and the DFN packaging high-power radio frequency device structure is free of pin surface mounting packaging, small in size, small in occupied space, low in product cost and good in heat dissipation performance.

Description

Technical Field

[0001] The utility model relates to the technical field of semiconductors, in particular to a DFN packaged high-power radio frequency device. Background Art

[0002] The structure of the current TO270 packaged high-power RF device is as follows: Figure 1 As shown, it includes a base island 1, an adhesive material layer 2, a chip 3, a lead 4, a pin 5, and a plastic material layer 6. The plastic body formed by the plastic material layer 6 is relatively thick, and the plastic material of the ordinary plastic material layer has low thermal conductivity and poor heat dissipation performance. In order to obtain good heat dissipation, the pin 11 is arranged to extend out of the plastic material layer 6. Figure 2 , usually when assembled with PCB board 7, an external heat sink 8 is added, so the PCB board needs to be designed with a through hole to bond the external heat sink 8 to the PCB board 7 through the adhesive material layer 9. Figure 3 As shown, the entire product is mounted on a PCB board, and the base island 1 of the product is connected to the external heat sink 8 through an adhesive material layer 10.

[0003] From the above, we can see that because the base island of the product in the existing technology has a concave design, the development investment cost is high, the equipment is complex, the plastic packaging material above the chip is thick, the heat dissipation is poor, and the extension of the metal pins will produce higher impedance and self-inductance, which will take up more space on the PCB board. In addition, during the packaging production, due to the low arrangement density of the frame, the copper material utilization rate is low, the product thickness is thick, the amount of plastic packaging material used is high, and the product cost is high. Utility Model Content

[0004] The following is a brief overview of embodiments of the present invention to provide a basic understanding of certain aspects of the invention. It should be understood that the following summary is not an exhaustive overview of the invention. It is not intended to identify key or important aspects of the invention, nor is it intended to limit the scope of the invention. Its purpose is simply to present certain concepts in a simplified form as a prelude to the more detailed description discussed later.

[0005] In order to solve the above problems, the utility model proposes a DFN-packaged high-power RF device, improves the structure of the existing TO270-packaged high-power RF device, and uses a DFN-packaged RF device to improve the above problems. The DFN-packaged RF device product is a pinless surface mount package with a small size and small footprint. The frame arrangement density is high during packaging production, the copper material utilization rate is high, the product thickness is thin, the amount of plastic packaging material used is reduced, the product cost is low, the thickness of the plastic packaging material above the chip is thin, which is conducive to heat diffusion. The pinless design has very low impedance and self-inductance, which can meet the applications of microwave or communication. The packaging process of the DFN product is simple and the development cost is low. There are two methods for implementing the DFN-packaged RF device product.

[0006] Specifically, the present invention provides a DFN-packaged high-power RF device, comprising a plastic encapsulation material layer and a base island, a chip, leads, and pins within the plastic encapsulation material layer. The chip is located on the base island, and the pins are located on both sides of the base island, with a gap between the pins on both sides and the base island. The chip and the pins are electrically connected via the leads. The chip and the base island are bonded together via a first adhesive material layer. The upper portions of both sides of the base island extend horizontally outwardly to form protrusions, and the pins extend horizontally inwardly to form protrusions, such that the gaps between the pins on both sides and the base island are narrow at the top and wide at the bottom. The gap structure between the pins and the base island enhances the sealing performance of the plastic encapsulation material layer, ensuring the stability and performance of the overall structure.

[0007] As a feasible solution, the lower portion of the molding material layer is filled in the gap between the pins and the base island.

[0008] Furthermore, the DFN packaged high-power radio frequency device further includes a pad, which is bonded to the bottom of the base island via a second adhesive material layer.

[0009] Furthermore, the DFN packaged high-power RF device also includes PCB boards arranged on both sides of the pad, and the PCB boards are bonded to the bottoms of the pins on both sides through a third adhesive material layer; and there is a gap between the PCB boards on both sides and the pad.

[0010] Furthermore, the DFN-packaged high-power RF device also includes an external heat sink, the length of the external heat sink is greater than the length of the pad, the middle part of the external heat sink is bonded to the bottom of the pad through a fourth adhesive material layer, and the two side parts of the external heat sink are respectively bonded to the bottom of the PCB boards on both sides through a fifth adhesive material layer.

[0011] As another feasible solution, the DFN packaged high-power RF device further includes a pad, which is bonded to the bottom of the base island via an adhesive layer. Meanwhile, the lower portion of the plastic encapsulation material layer extends downward to wrap around the left and right sides of the pad.

[0012] Furthermore, the DFN-packaged high-power RF device also includes an external heat sink and a PCB board. The external heat sink is a bilaterally symmetrical structure and has a rectangular upper part and a rectangular lower part. The width of the rectangular lower part is greater than the width of the rectangular upper part. The top surface of the rectangular upper part is bonded to the bottom of the base island through an adhesive material layer; the PCB board is arranged between the rectangular lower part and the pin, the top of the PCB board is bonded to the bottom of the pin through an adhesive material layer, and the bottom of the PCB board is bonded to the left and right top surfaces of the rectangular lower part through an adhesive material layer.

[0013] The utility model realizes a DFN packaged high-power RF device structure through the above scheme, and uses DFN packaging to improve the RF device problems of the prior art. The DFN packaged RF device is generally a pinless surface mount package with a small size and a small footprint. In addition, the arrangement density of the frame is high during packaging production, the copper material utilization rate is high, the product thickness is thin, the amount of plastic packaging material used is reduced, and the product cost is low. The thickness of the plastic packaging material above the chip is thin, which is conducive to heat diffusion. The pinless design has very low impedance and self-inductance, which can meet the applications of microwaves or communications. The packaging process of DFN products is simple and the development cost is low. BRIEF DESCRIPTION OF THE DRAWINGS

[0014] The present invention can be better understood by referring to the following description in conjunction with the accompanying drawings, wherein the same or similar reference numerals are used throughout the drawings to represent the same or similar components. The accompanying drawings, together with the following detailed description, are incorporated into and form a part of this specification and are used to further illustrate the preferred embodiments of the present invention and to explain the principles and advantages of the present invention. In the drawings:

[0015] Figure 1 This is a schematic diagram of the structure of a high-power radio frequency device packaged in TO270 in the prior art;

[0016] Figure 2 for Figure 1 Schematic diagram of the assembly of high-power RF devices and PCB boards;

[0017] Figure 3 This is a schematic diagram of the assembly of high-power RF components and external heat sinks on a PCB board.

[0018] Figure 4 This is a schematic diagram of the structure of the DFN packaged high-power radio frequency device in Example 1;

[0019] Figure 5 This is a schematic diagram of the PCB board and external heat sink assembled in Example 1;

[0020] Figure 6Schematic diagram of bonding a chip to a lead frame base island in the production method of Example 1;

[0021] Figure 7 This is a schematic diagram of connecting a chip to a pin using a lead wire in the production method of Example 1;

[0022] Figure 8 This is a schematic diagram of using a plastic encapsulation compound to protect a chip, leads, and lead frame in the production method of Example 1;

[0023] Figure 9 Schematic diagram of bonding the spacer to the base island in the production method of Example 1;

[0024] Figure 10 Schematic diagram of bonding the spacer to the base island in the production method of Example 2;

[0025] Figure 11 Schematic diagram of bonding the chip to the base island in the production method of Example 2;

[0026] Figure 12 This is a schematic diagram of connecting a chip to a pin using a lead wire in the production method of Example 2;

[0027] Figure 13 This is a schematic diagram of using a plastic encapsulation compound to protect a chip, leads, and lead frame in the production method of Example 2;

[0028] Figure 14 This is a schematic diagram of assembling the plastic-sealed DFN package on a PCB board in the production method of Example 2;

[0029] Figure 15 This is a schematic diagram of the structure of the DFN packaged high-power radio frequency device in Example 3;

[0030] Figure 16 This is a schematic diagram of assembling the plastic-sealed DFN package on a PCB board in the production method of Example 3;

[0031] Figure 17 Schematic diagram of bonding the chip to the base island in the production method of Example 3;

[0032] Figure 18 This is a schematic diagram of connecting a chip to a pin using a lead wire in the production method of Example 3;

[0033] Figure 19 This is a schematic diagram of using a plastic encapsulation compound to protect a chip, leads, and lead frame in the production method of Example 3;

[0034] In the figure, the corresponding numbers of the components are as follows: base island 1, adhesive material layer 2, chip 3, lead 4, pin 5, plastic material layer 6, PCB board 7, external heat sink 8, adhesive material layer 9, adhesive material layer 10, base island 101, first adhesive material layer 102, chip 103, lead 104, pin 105, plastic material layer 106, third adhesive material layer 107, pad 108, second adhesive material layer 109, fourth adhesive material layer 110, fifth adhesive material layer 111, PCB board 112, external heat sink 113. DETAILED DESCRIPTION

[0035] The following describes embodiments of the present invention with reference to the accompanying drawings. Elements and features described in one drawing or one embodiment of the present invention may be combined with elements and features shown in one or more other drawings or embodiments. It should be noted that for the sake of clarity, the drawings and descriptions omit the representation and description of components and processes that are not relevant to the present invention and are known to those of ordinary skill in the art.

[0036] In the description of the present invention, it should be understood that the terms "center," "longitudinal," "lateral," "upper," "lower," "front," "back," "left," "right," "vertical," "horizontal," "top," "bottom," "inner," and "outer," etc., indicating positions or relationships, are based on the positions or relationships shown in the accompanying drawings and are intended solely to facilitate the description of the present invention and simplify the description. They do not indicate or imply that the devices or components referred to must have a specific orientation, be constructed, or operate in a specific orientation. Therefore, they should not be construed as limitations on the present invention. Furthermore, the terms "first," "second," and "third" are used for descriptive purposes only and should not be construed as indicating or implying relative importance.

[0037] In the description of this utility model, it should be noted that, unless otherwise expressly specified or limited, the terms "mounted," "connected," and "connected" should be understood in a broad sense. For example, they can refer to fixed connections, detachable connections, or integral connections; mechanical connections, electrical connections; direct connections, indirect connections through an intermediate medium, and internal communication between two components. Those skilled in the art will understand the specific meanings of the above terms in this utility model based on the specific circumstances.

[0038] The utility model uses DFN packaging to replace TO270 to improve the problems of RF devices. The RF device product of DFN packaging is a pinless surface mount package with a small size and small space occupation. In addition, the arrangement density of the frame is high during packaging production, the copper material utilization rate is high, the product thickness is thin, the amount of plastic packaging material used is reduced, the product cost is low, and the thickness of the plastic packaging material above the chip is thin, which is conducive to heat diffusion. The pinless design has very low impedance and self-inductance, which can meet the applications of microwave or communication. The packaging process of DFN products is simple and the development cost is low.

[0039] Example 1

[0040] See also Figure 4-Figure 9 The DFN packaged high-power RF device of this embodiment includes a molding material layer 106 and a base island 101, a chip 103, leads 104, and pins 105 within the molding material layer 106. The chip 103 is located on the base island 101, and the chip 103 and the pins 105 are electrically connected via the leads 104. The chip 103 and the base island 101 are bonded together via a first adhesive material layer 102. The pins 105 are located on both sides of the base island 101, with gaps between the pins 105 and the base island 101. Protrusions (square protrusions in this embodiment) extend horizontally outward from the upper portions of both sides of the base island 101, and the pins 105 extend horizontally inward, such that the gaps between the pins 105 and the base island 101 are narrow at the top and wide at the bottom. The gap structure between the pins 105 and the base island 101 enhances the sealing performance of the molding material layer 106, ensuring the stability and performance of the overall structure.

[0041] The lower portion of the molding material layer 106 is filled in the gap between the pins 105 and the base island 101 .

[0042] The DFN packaged high-power radio frequency device further includes a pad 108 , which is bonded to the bottom of the base island 101 via a second adhesive material layer 109 .

[0043] The DFN packaged high-power RF device further includes PCB boards 112 disposed on both sides of the pad 108 . The PCB boards 112 are bonded to the bottoms of the pins 105 on both sides via a third adhesive material layer 107 . There is a gap between the PCB boards 112 and the pad 108 on both sides.

[0044] The DFN-packaged high-power RF device also includes an external heat sink 113, the length of which is greater than the length of the pad 108. The middle portion of the external heat sink 113 is bonded to the bottom of the pad 108 through a fourth adhesive material layer 110, and the two side portions of the external heat sink 113 are respectively bonded to the bottom of the two side PCB boards 112 through a fifth adhesive material layer 111.

[0045] In specific implementation, the pad 108 is bonded on the base island 101 of the DFN package, such as Figure 5 As shown, the DFN package with the pad 108 bonded thereto is mounted on the PCB board 112. Figure 6 As shown, the production method of the DFN packaged high-power RF device is as follows:

[0046] 1: Bond the chip 103 to the lead frame base island 101 through adhesive material, as shown in FIG. Figure 6 As shown;

[0047] 2: Connect the chip 103 to the lead frame pin 105 with the lead 104, and lead out the electrical connection through the lead 104, such as Figure 7 As shown;

[0048] 3: Use plastic packaging material to protect the chip 103, lead 104, and lead frame. The bottom surface of the frame base island 101 and the pin 105 needs to be exposed. Figure 8 As shown;

[0049] 4: Bond the pad 108 to the lead frame base island 101 by bonding material, as shown in FIG. Figure 9 As shown;

[0050] 5: Finally, assemble the DFN package with the spacer 108 on the PCB board 112 by bonding material, as shown in FIG. Figure 5 shown.

[0051] Example 2

[0052] See also Figure 10-14 , which is different from Example 1, in this embodiment, the lower portion of the plastic packaging material layer 106 extends downward to wrap the left and right sides of the pad 108.

[0053] In specific implementation, the production method of the DFN packaged high-power RF device is as follows:

[0054] 1: Bond the pad 108 to the lead frame base island 101 by bonding material, as shown in FIG. Figure 10 As shown;

[0055] 2: Bond the chip 103 to the lead frame base island 101 with adhesive material, as shown in FIG. Figure 11 As shown;

[0056] 3: Connect the chip 103 to the lead frame pin 105 with the lead 104, and lead out the electrical connection through the lead 104, such as Figure 12 As shown;

[0057] 4: Use plastic packaging material to protect the chip 103, lead 104, lead frame, and pad 108. The lower surface of the pad 108 and the frame pin 105 needs to be exposed, such as Figure 13 As shown;

[0058] 5: Finally, assemble the plastic-sealed DFN package on the PCB board 112 through the adhesive material, as shown in the following figure: Figure 14 shown.

[0059] Example 3

[0060] See also Figures 15-18 Unlike Example 1, this embodiment does not provide a pad, but only provides an external heat sink 113 (or external heat sink). The external heat sink is a bilaterally symmetrical boss structure, and has a rectangular upper part and a rectangular lower part. The width of the rectangular lower part is greater than the width of the rectangular upper part, and the top surface of the rectangular upper part is bonded to the bottom of the base island 101 through an adhesive material layer; the PCB board 112 is arranged between the rectangular lower part and the pin 105, the top of the PCB board 112 is bonded to the bottom of the pin 105 through an adhesive material layer, and the bottom of the PCB board 112 is bonded to the left and right top surfaces of the rectangular lower part through an adhesive material layer.

[0061] In specific implementation, the production method of the DFN packaged high-power RF device is as follows:

[0062] An external heat sink with a boss is bonded to the PCB board 112, such as Figure 15 As shown, the DFN package is mounted on the PCB board 112 through adhesive material, as shown in FIG. Figure 16 As shown, the production method is as follows:

[0063] 1: Bond the chip 103 to the lead frame base island 101 through adhesive material, as shown in FIG. Figure 17 As shown;

[0064] 2: Connect the chip 103 to the lead frame pin 105 with the lead 104, and lead out the electrical connection through the lead 104, such as Figure 18 As shown;

[0065] 3: Use plastic packaging material to protect the chip 103, lead 104, and lead frame. The bottom surface of the frame base island 101 and the pin 105 needs to be exposed. Figure 19 As shown;

[0066] 4: Finally, assemble the DFN package on the PCB board 112 through the adhesive material, as shown in Figure 16 shown.

[0067] In the above description of specific embodiments of the present invention, the features described and / or shown for one embodiment can be used in the same or similar manner in one or more other embodiments, combined with the features in other embodiments, or replace the features in other embodiments.

[0068] Although the present invention has been disclosed above through the description of specific embodiments of the present invention, it should be understood that all the above embodiments and examples are illustrative rather than restrictive. Those skilled in the art may design various modifications, improvements, or equivalents of the present invention within the spirit and scope of the appended claims. Such modifications, improvements, or equivalents should also be considered to be included within the scope of protection of the present invention.

Claims

1. A DFN packaged high-power radio frequency device, characterized by: It includes a plastic encapsulation material layer and a base island, a chip, leads and pins inside the plastic encapsulation material layer, the chip is located on the base island, and the chip and the base island are bonded by a first adhesive material layer; the pins are located on both sides of the base island, and there is a gap between the pins on both sides and the base island, and the chip and the pins are electrically connected through leads; the upper parts of both sides of the base island extend horizontally outward to form protrusions, and the pins extend horizontally inward to form protrusions, so that the gap between the pins on both sides and the base island is narrow at the top and wide at the bottom.

2. The DFN packaged high-power radio frequency device according to claim 1, characterized in that: The lower portion of the plastic packaging material layer is filled in the gap between the pins and the base island.

3. The DFN packaged high-power radio frequency device according to claim 2, characterized in that: The DFN packaged high-power radio frequency device further includes a pad, which is bonded to the bottom of the base island via a second bonding material layer.

4. The DFN packaged high-power radio frequency device according to claim 3, characterized in that: The DFN packaged high-power radio frequency device also includes PCB boards arranged on both sides of the pad, and the PCB boards are bonded to the bottoms of the pins on both sides through a third adhesive material layer; and there is a gap between the PCB boards on both sides and the pad.

5. The DFN packaged high-power radio frequency device according to claim 4, characterized in that: The DFN-packaged high-power RF device also includes an external heat sink, the length of which is greater than the length of the pad, the middle part of the external heat sink is bonded to the bottom of the pad through a fourth adhesive material layer, and the two side parts of the external heat sink are respectively bonded to the bottom of the two side PCB boards through a fifth adhesive material layer.

6. The DFN packaged high-power radio frequency device according to claim 1, characterized in that: The protrusions extending from the base island are square protrusions, and the protrusions extending from the pins are square protrusions.

7. The DFN packaged high-power radio frequency device according to claim 1, characterized in that: The DFN packaged high-power radio frequency device further includes a pad, which is bonded to the bottom of the base island via an adhesive material layer.

8. The DFN packaged high-power radio frequency device according to claim 7, characterized in that: The lower portion of the plastic packaging material layer extends downward to wrap the left and right sides of the cushion block.

9. The DFN packaged high-power radio frequency device according to claim 1, characterized in that: The DFN-packaged high-power RF device also includes an external heat sink and a PCB board. The external heat sink has a bilaterally symmetrical structure and has a rectangular upper part and a rectangular lower part. The width of the rectangular lower part is greater than the width of the rectangular upper part. The top surface of the rectangular upper part is bonded to the bottom of the base island through an adhesive material layer; the PCB board is arranged between the rectangular lower part and the pin, the top of the PCB board is bonded to the bottom of the pin through an adhesive material layer, and the bottom of the PCB board is bonded to the left and right top surfaces of the rectangular lower part through an adhesive material layer.

Images