Silicon MEMS strain gauge corrosion thinning device

Abstract

The utility model relates to the technical field of silicon strain gauge production, and discloses a silicon MEMS strain gauge corrosion thinning device which comprises a workbench, a reaction box is fixedly connected to the inner bottom end of the workbench, a silicon block is arranged in the reaction box, a sliding rail is arranged at the top end of the workbench, a moving mechanism is slidably connected to the inner portion of the sliding rail, and the moving mechanism is connected to the bottom end of the workbench. The device comprises a workbench, a moving mechanism is arranged in the workbench and used for moving a silicon block subjected to corrosion reaction, a cutting mechanism is arranged in the workbench and used for cutting the corroded silicon block to the required thickness, and a collecting mechanism is arranged in the workbench and used for collecting the cut silicon block. According to the utility model, after the top of the silicon block is adhered to the bottom of the UV adhesive film, the silicon block is put into the reaction box, and the corrosive medium is injected into the reaction box to carry out silicon corrosion, so that the defect of using one of chemical thinning and mechanical thinning methods is avoided by fusing the chemical thinning and mechanical thinning methods.

Description

Technical Field

[0001] The utility model relates to the technical field of silicon strain gauge production, in particular to a silicon MEMS strain gauge corrosion and thinning device. Background Art

[0002] Silicon strain gauge etching and thinning equipment is used to remove surface material from silicon strain gauges, achieving thinning. This equipment has a wide range of applications in semiconductor manufacturing, silicon wafer processing, optical material processing, and thin film material preparation. Silicon strain gauge etching and thinning can be achieved through mechanical thinning and chemical thinning.

[0003] Mechanical thinning refers to the removal of a certain thickness of material from the surface of the silicon wafer through physical methods such as grinding and polishing. Chemical thinning refers to the use of the principle of chemical reaction to achieve the purpose of thinning by corroding the surface material of the silicon wafer.

[0004] The disadvantage of mechanical thinning using silicon strain gauge corrosion thinning devices in the existing technology is that it will cause certain damage to the silicon wafer surface, requiring subsequent treatment to restore the surface quality. The disadvantage of chemical thinning is that it requires controlling the reaction conditions and selecting a suitable etching solution to ensure thinning accuracy and surface quality. Utility Model Content

[0005] In order to make up for the above shortcomings, the utility model provides a silicon MEMS strain gauge corrosion thinning device, which aims to improve the problem that the silicon strain gauge corrosion thinning device in the prior art has certain defects when operating in a single way.

[0006] In order to achieve the above-mentioned purpose, the present invention adopts the following technical solutions: a silicon MEMS strain gauge corrosion and thinning device, comprising a workbench, a reaction box fixedly connected to the inner bottom end of the workbench, a silicon block arranged inside the reaction box, a slide rail provided at the top end of the workbench, a moving mechanism slidably connected inside the slide rail, the moving mechanism being used to move the silicon block on which the corrosion reaction has been completed, a cutting mechanism provided inside the workbench, the cutting mechanism being used to cut the corroded silicon block to a required thickness, a collecting mechanism provided inside the workbench, the collecting mechanism being used to collect the cut silicon block, and an irradiation mechanism provided at the inner top end of the workbench, the irradiation mechanism being used to cause the cut silicon block to fall off by irradiation.

[0007] As a further description of the above technical solution:

[0008] The moving mechanism includes an electric push rod, the top of which is slidably connected to the inside of the slide rail, the output end of the electric push rod is fixedly connected to a UV adhesive film, and the bottom end of the UV adhesive film is adhered to the top of the silicon block.

[0009] As a further description of the above technical solution:

[0010] The cutting mechanism comprises a bracket, the bottom of the bracket is fixedly connected to the inner bottom end of the workbench, and the top of the bracket is fixedly connected to a blade.

[0011] As a further description of the above technical solution:

[0012] The collecting mechanism comprises a collecting box, the bottom end of which is fixedly connected to the inner bottom end of the workbench.

[0013] As a further description of the above technical solution:

[0014] The irradiation mechanism includes two UV lamp tubes, and the top ends of the two UV lamp tubes are fixedly connected to the inner top end of the workbench.

[0015] As a further description of the above technical solution:

[0016] The height of the reaction box is set to 15um.

[0017] As a further description of the above technical solution:

[0018] The initial thickness of the silicon block is set to 40 μm.

[0019] As a further description of the above technical solution:

[0020] The height of the blade is set to 20 μm.

[0021] The utility model has the following beneficial effects:

[0022] 1. In the present invention, the initial thickness of the silicon block is set to 40 μm, the top of the silicon block is bonded to the bottom of the UV film, and then the block is placed in a reaction box. A corrosive medium is injected into the reaction box to corrode the silicon. After all the silicon in the reaction box is corroded, the remaining 25 μm thick silicon block is moved to the blade for cutting by an electric push rod. This method achieves the goal of circumventing the defects of using one method by combining chemical thinning and mechanical thinning, thereby ensuring the accuracy and reliability of the strain gauge.

[0023] 2. In the present invention, after the silicon block is cut, the required thickness of 20um is left. The electric push rod is used to move it to the top of the collection box through the UV film. The UV lamp is turned on to irradiate the UV film to make it lose its stickiness and allow the silicon block to fall into the collection box. This achieves the effect of faster collection of the silicon block by the simultaneous operation of the collection mechanism and the irradiation mechanism, thereby improving the practicality of the device. BRIEF DESCRIPTION OF THE DRAWINGS

[0024] Figure 1This is a three-dimensional diagram of a silicon MEMS strain gauge corrosion and thinning device proposed in the utility model;

[0025] Figure 2 This is a cross-sectional view of a reaction box of a silicon MEMS strain gauge corrosion and thinning device proposed in the utility model;

[0026] Figure 3 This is a schematic diagram of the cutting mechanism of a silicon MEMS strain gauge corrosion thinning device proposed in the present invention;

[0027] Figure 4 This is a schematic diagram of the collection mechanism of the silicon MEMS strain gauge corrosion and thinning device proposed in the utility model.

[0028] Legend:

[0029] 1. Workbench; 2. Reaction box; 3. Silicon block; 4. Slide rail; 5. Electric push rod; 6. UV film; 7. Bracket; 8. Blade; 9. Collection box; 10. UV lamp. DETAILED DESCRIPTION

[0030] The following will be combined with the drawings in the embodiments of the present invention to clearly and completely describe the technical solutions in the embodiments of the present invention. Obviously, the embodiments described are only part of the embodiments of the present invention, not all of the embodiments. Based on the embodiments of the present invention, all other embodiments obtained by ordinary technicians in this field without making creative efforts are within the scope of protection of the present invention.

[0031] Reference Figure 1 - Figure 2The utility model provides an embodiment: a silicon MEMS strain gauge corrosion thinning device, including a workbench 1, the workbench 1 plays the role of supporting the internal structure, the bottom end of the workbench 1 is fixedly connected to a reaction box 2, the reaction box 2 plays the role of corrosion reaction, a silicon block 3 is arranged inside the reaction box 2, the top of the workbench 1 is provided with a slide rail 4, the slide rail 4 plays the role of connecting an electric push rod 5, the slide rail 4 is slidably connected to a moving mechanism, the moving mechanism is used to move the silicon block 3 after the corrosion reaction is completed, the workbench 1 is provided with a cutting mechanism, the cutting mechanism is used to cut the corroded silicon block 3 to a required thickness, the workbench 1 is provided with a collecting mechanism, the collecting mechanism is used to collect the cut silicon block 3, the top end of the workbench 1 is provided with an irradiation mechanism, the irradiation mechanism is used to make the cut silicon block 3 fall off by irradiation. The moving mechanism includes an electric push rod 5, which moves UV adhesive film 6. The top of the electric push rod 5 is slidably connected to the inside of the slide rail 4. The output end of the electric push rod 5 is fixedly connected to the UV adhesive film 6, which serves to adhere to the silicon block 3. The bottom end of the UV adhesive film 6 adheres to the top of the silicon block 3. The cutting mechanism includes a bracket 7, which supports a blade 8. The bottom of the bracket 7 is fixedly connected to the bottom end of the workbench 1. The top of the bracket 7 is fixedly connected to the blade 8, which serves to cut the silicon block 3. The height of the reaction box 2 is set to 15μm, the initial thickness of the silicon block 3 is set to 40μm, and the height of the blade 8 is set to 20μm.

[0032] Reference Figure 3-Figure 4 The collecting mechanism includes a collecting box 9, which is used to collect the formed silicon blocks 3. The bottom end of the collecting box 9 is fixedly connected to the inner bottom end of the workbench 1. The irradiation mechanism includes two UV lamps 10, which are used to irradiate the UV film 6. The top ends of the two UV lamps 10 are fixedly connected to the inner top end of the workbench 1.

[0033] Working principle: By setting the initial thickness of the silicon block 3 to 40um, the top of the silicon block 3 is bonded to the bottom of the UV film 6 and then placed in the reaction box 2, and the corrosive medium is injected into the reaction box 2 to corrode the silicon. After all the silicon in the reaction box 2 is corroded, the electric push rod 5 is used to move the remaining 25um thick silicon block 3 to the blade 8 for cutting.

[0034] After the silicon block 3 is cut, the required thickness of 20 μm remains. The electric push rod 5 is used to move it to the top of the collection box 9 through the UV film 6. The UV lamp 10 is turned on to irradiate the UV film 6 to make it lose its stickiness and allow the silicon block 3 to fall into the collection box 9.

[0035] Finally, it should be noted that the above is only a preferred embodiment of the present invention and is not intended to limit the present invention. Although the present invention has been described in detail with reference to the aforementioned embodiments, those skilled in the art can still modify the technical solutions described in the aforementioned embodiments or make equivalent replacements for some of the technical features therein. Any modifications, equivalent replacements, improvements, etc. made within the spirit and principles of the present invention should be included in the scope of protection of the present invention.

Claims

1. A silicon MEMS strain gauge corrosion thinning device, comprising a workbench (1), characterized in that: The bottom end of the workbench (1) is fixedly connected to a reaction box (2), a silicon block (3) is arranged inside the reaction box (2), a slide rail (4) is provided at the top end of the workbench (1), a moving mechanism is slidably connected inside the slide rail (4), the moving mechanism is used to move the silicon block (3) after the corrosion reaction is completed, a cutting mechanism is provided inside the workbench (1), the cutting mechanism is used to cut the silicon block (3) after the corrosion reaction is completed to a required thickness, a collecting mechanism is provided inside the workbench (1), the collecting mechanism is used to collect the cut silicon block (3), and an irradiation mechanism is provided at the top end of the workbench (1), the irradiation mechanism is used to make the cut silicon block (3) fall off by irradiation.

2. The silicon MEMS strain gauge corrosion and thinning device according to claim 1, characterized in that: The moving mechanism comprises an electric push rod (5), the top of the electric push rod (5) is slidably connected to the inside of the slide rail (4), the output end of the electric push rod (5) is fixedly connected to a UV adhesive film (6), and the bottom end of the UV adhesive film (6) is adhered to the top of the silicon block (3).

3. The silicon MEMS strain gauge corrosion thinning device according to claim 1, characterized in that: The cutting mechanism comprises a bracket (7), the bottom of the bracket (7) is fixedly connected to the inner bottom end of the workbench (1), and the top of the bracket (7) is fixedly connected to a blade (8).

4. The silicon MEMS strain gauge corrosion and thinning device according to claim 1, characterized in that: The collecting mechanism comprises a collecting box (9), the bottom end of the collecting box (9) being fixedly connected to the inner bottom end of the workbench (1).

5. The silicon MEMS strain gauge corrosion and thinning device according to claim 1, characterized in that: The irradiation mechanism comprises two UV lamp tubes (10), and the top ends of the two UV lamp tubes (10) are fixedly connected to the inner top end of the workbench (1).

6. The silicon MEMS strain gauge corrosion thinning device according to claim 1, characterized in that: The height of the reaction box (2) is set to 15 μm.

7. The silicon MEMS strain gauge corrosion thinning device according to claim 1, characterized in that: The initial thickness of the silicon block (3) is set to 40 μm.

8. The silicon MEMS strain gauge corrosion thinning device according to claim 3, characterized in that: The height of the blade (8) is set to 20 μm.

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