Reaction furnace silane gas inlet device based on LPCVD (Low Pressure Chemical Vapor Deposition) technology

Abstract

The utility model discloses a reaction furnace silane gas inlet device based on LPCVD (low pressure chemical vapor deposition) technology, which belongs to the technical field of semiconductors and comprises a reaction furnace tube and a plurality of gas inlet pipes arranged close to the inner wall of the reaction furnace tube, one end of each gas inlet pipe is a closed end, and the other end of each gas inlet pipe is fixedly connected with a connecting piece. A plurality of exhaust holes are formed in the two sides, adjacent to the inner wall of the reaction furnace tube, of the gas inlet pipe, spraying pipes are installed on the exhaust holes, a plurality of gas outlet holes used for dispersing silane gas are formed in the spraying pipes, and the hole diameters of the gas outlet holes are gradually increased in the direction from the open end to the closed end of the gas inlet pipe. The flow rate of silane gas entering the gas inlet pipe is increased through the arrangement of the variable-diameter connecting rod, and the silane gas can quickly reach the closed end of the gas inlet pipe through the connection of the variable-diameter connecting rod, so that the silane gas dispersed in the reaction furnace pipe can be more uniform.

Description

Technical Field

[0001] The utility model belongs to the technical field of semiconductors, and in particular relates to a silane gas inlet device for a reactor based on LPCVD technology. Background Art

[0002] In traditional crystalline silicon solar cells, serious recombination occurs in the metal-semiconductor contact area, which has become a major factor restricting the efficiency development of crystalline silicon solar cells. Passivation contact technology, as a feasible solution to reduce contact recombination, has significantly improved the efficiency of crystalline silicon cells. One of the core technologies of passivation contact technology is intrinsic amorphous silicon deposition. Currently, the most widely used methods are atmospheric pressure chemical vapor deposition (APCVD), plasma-enhanced chemical vapor deposition (PECVD), and low-pressure chemical vapor deposition (LPCVD). Among them, LPCVD is widely used due to its better deposition uniformity, higher deposition rate, good stability, and lower particle contamination sources.

[0003] At present, the silane air inlet pipe in the LPCVD process equipment is mainly a straight-through spray pipe. The silane air inlet pipe is often set to a closed type, with an air outlet at the non-interface end or a diffusion pipe installed on the air inlet pipe. The gas pressure inside the air inlet pipe is controlled by the valve at the inlet. The single straight-through air inlet method can easily cause uneven silane in the pipe, thereby causing uneven deposited polysilicon layer. At the same time, it is easy to cause silane to decompose and deposit polysilicon in the air inlet pipe, which consumes a large amount of gas, and multiple accumulations can easily cause blockage of the air inlet pipe. The blockage of the air inlet pipe can easily cause uneven gas diffusion in the furnace tube, and uneven deposition of amorphous silicon on adjacent silicon wafers. When the air inlet pipe is seriously blocked, the silane is not fully discharged, and the entire air inlet pipe must be replaced with a new one, increasing costs.

[0004] Prior art patents have been published for silane inlet pipes for furnace tubes. Among them, patent CN210349787U discloses a semiconductor fabrication apparatus comprising a housing including a cavity for accommodating a target object, the cavity having an opening; a support device for supporting the target object; the support device carrying the target object, which enters the cavity through the opening; a first-type gas conduit located within the cavity, the conduit wall of the first-type gas conduit having a plurality of first air holes disposed therein; the arrangement of the plurality of first air holes aligns with the flow direction of a first-type reactive gas within the first-type gas conduit along the first-type gas conduit; and the apertures of the plurality of first air holes gradually increase in the direction of flow of the first-type reactive gas within the first-type gas conduit. While this solves the problem of uneven film thickness formed on the surfaces of multiple wafers in the same batch entering the cavity, resulting in low yield, it still presents issues such as the inlet conduit being easily clogged, a short replacement cycle, and high SiH4 gas consumption in the LPCVD process. Utility Model Content

[0005] In order to overcome the problems in the prior art that the air intake pipe is easily blocked, the replacement cycle is short, and the SiH4 gas consumption in the LPCVD process is large, the utility model provides a silane air intake device for a reactor based on LPCVD technology, the specific contents of which are as follows:

[0006] A silane air intake device for a reactor based on LPCVD technology is characterized in that it includes a reactor tube and several air intake pipes arranged near the inner wall of the reactor tube, one end of the air intake pipe is set as a closed end and the other end is fixedly connected to a connecting piece, the end of the air intake pipe close to the connecting piece is provided with a reducing rod, the inner diameter of the reducing rod away from the connecting piece is larger than the inner diameter of the air intake pipe, several exhaust holes are provided on both sides of the air intake pipe adjacent to the inner wall of the reactor tube, a spray pipe is installed on the exhaust hole, and the spray pipe is provided with several outlet holes for dispersing silane gas, and the aperture of the outlet holes increases gradually from the open end to the closed end of the air intake pipe.

[0007] A reducing rod is provided at the end of the air inlet pipe in the air inlet direction. The reducing rod increases the flow rate of the silane gas when it enters the air inlet pipe, so that the silane gas can quickly fill the air inlet pipe and then diffuse out through the spray pipe. The connection of the reducing rod enables the silane gas to quickly reach the closed end of the air inlet pipe, thereby making the silane gas diffused out of the reaction furnace tube more uniform, thereby avoiding uneven film deposition on the silicon wafer in the reaction furnace tube.

[0008] Furthermore, several of the spray pipes are arranged at equal distances from the inner wall of the reaction furnace tube, the spray pipes on the same cross section of the reaction furnace tube form an arc-shaped diffusion circle, the air outlet is opened on the side away from the inner wall of the reaction furnace tube, and the aperture of the air outlet decreases successively along the direction from the free end of the spray pipe to the air inlet pipe.

[0009] Through the above technical solution, the spray pipe is set equidistant from the inner wall of the reactor tube, and the combined arc-shaped diffusion ring is formed, allowing the spray pipe to surround the silicon wafers in the reactor tube, which can achieve more uniform silane diffusion within the reactor tube. In addition, to avoid uneven silane diffusion from the spray pipe, the aperture of the exhaust port is set to decrease from the free end of the spray pipe to the connection between the spray pipe and the air inlet pipe. This prevents the amount of silane gas diffused by the spray pipe length from being affected, making the diffused gas more uniform, maintaining a uniform silane gas concentration throughout the reactor tube, and maintaining a uniform deposition thickness throughout the silicon wafer. This can reduce the occurrence of uneven silicon diffusion during silicon wafer production, improve the thickness uniformity within the silicon wafer, and significantly increase the silicon wafer production yield.

[0010] Furthermore, the two ends of the reaction furnace tube are respectively a furnace tail and a furnace mouth, the furnace tail is provided with a furnace tail cover, and the furnace mouth is provided with a furnace door, the open end of the air inlet pipe passes through the furnace tail cover and is connected to a connecting pipe, the connecting piece is detachably connected to the connecting pipe, and the connecting piece is placed on the outside of the reaction furnace tube.

[0011] Through the above technical solution, the connecting piece is placed on the outside of the furnace tail cover, and the connecting piece and the connecting pipe are set to be detachable, which is convenient for connecting the pipeline and also convenient for disassembly and replacement of the air inlet pipe.

[0012] Furthermore, a gas source bottle VMB cabinet is provided near the furnace tail cover plate, the output end of the gas source bottle VMB cabinet is connected to the free end of the connecting pipe, and the connecting pipe 12 near the output end of the gas source bottle VMB cabinet 13 is connected in sequence with a pneumatic diaphragm valve 14 and a flow meter 15.

[0013] The above technical solution, by installing an air pipe outside the reactor tube, stabilizes the air pressure entering the intake pipe and prevents air intake from being affected by an excessively long pipe. Furthermore, installing a pneumatic diaphragm valve and flow meter on the pipe connecting to the reactor tube allows for more accurate control of the amount of gas entering the reactor tube, ensuring a more complete reaction and avoiding waste of silane gas. By controlling the gas flow rate within the intake pipe, the diameter of the intake pipe can be increased, thereby slowing down the rate of intake pipe blockage and extending the life of the flow guide pipe.

[0014] Furthermore, the connecting pipe includes a straight connecting pipe and a branch connecting pipe, the straight connecting pipe is connected to the gas source bottle VMB cabinet, the branch connecting pipe is connected to the air inlet pipe, and the pneumatic diaphragm valve and the flow meter are installed on the straight connecting pipe.

[0015] Furthermore, a vacuum pump is provided near the furnace tail cover plate, the reaction furnace tube is connected to the vacuum pump through a connecting pipe, the end of the connecting pipe facing away from the vacuum pump passes through the furnace tail cover plate and is connected to the inside of the reaction furnace tube, and a butterfly valve is provided on the connecting pipe near the vacuum pump.

[0016] Through the above technical solution, a vacuum pump is arranged on the furnace tail cover plate, and an air inlet pipe is directly connected to the vacuum pump to extend into the furnace tube from the tail end of the furnace tube. A vacuum pump is connected to the tail end of the furnace tube for exhaust, so that the silane gas entering the furnace tube flows to the tail end of the furnace tube with the air flow, and a reactant-loaded product surface is generated during the flow process.

[0017] Furthermore, the connecting part includes an internally threaded connecting nut and a gland fixedly connected to the connecting nut, the gland fixedly connected to the reducing connecting rod through an auxiliary rod, and an external thread matching the connecting nut is provided on the outer wall of one end of the connecting pipe away from the gas source bottle VMB cabinet, and the connecting nut is threadedly connected to the connected pipe.

[0018] Furthermore, a support plate for supporting the end of the air inlet pipe is provided on the inner wall of the reaction furnace tube close to the furnace port, and the support plate corresponds to the air inlet pipe.

[0019] Furthermore, a silicon wafer carrier is provided at the center of the reaction furnace tube, and the silicon wafer carrier is used to place silicon wafers.

[0020] Furthermore, the air inlet pipe is made of stainless steel.

[0021] The beneficial effects produced by adopting the technical solution of this utility model are as follows:

[0022] (1) A reducing rod is provided at the end of the air inlet pipe in the air inlet direction. The reducing rod increases the flow rate of the silane gas when it enters the air inlet pipe, so that the silane gas can quickly fill the air inlet pipe and diffuse out through the spray pipe. The connection of the reducing rod enables the silane gas to quickly reach the closed end of the air inlet pipe, thereby making the silane gas diffused out of the reaction furnace tube more uniform, thereby avoiding uneven film deposition on the silicon wafer in the reaction furnace tube.

[0023] (2) The spray pipe is set to be equidistant from the inner wall of the reactor tube, and the arc-shaped diffusion ring formed by the combination is formed so that the spray pipe can surround the silicon wafer in the reactor tube, which can make the diffusion of silane in the reactor tube more uniform. In addition, in order to avoid the uneven silane diffused from the spray pipe, the aperture of the exhaust port is set to be reduced from the free end of the spray pipe to the connection between the spray pipe and the air inlet pipe, so as to avoid the amount of gas silane gas affected by the spray pipe length. The diffused gas is made more uniform, the silane gas concentration at various places in the reactor tube remains uniform, and the deposition thickness at various places in the silicon wafer also remains uniform. This can reduce the occurrence of silicon diffusion unevenness in the silicon wafer production process, improve the thickness uniformity in the silicon wafer, and significantly improve the silicon wafer production yield.

[0024] (3) The air pipe is arranged outside the reactor tube, which can stabilize the air pressure entering the air inlet pipe and prevent the air intake from being affected by the long pipe. In addition, the pneumatic valve and flow meter are arranged on the pipe connected to the reactor tube to more accurately control the amount of gas entering the reactor tube, making the reaction more complete and avoiding the waste of silane gas. The gas flow rate in the air inlet pipe is controlled by the flow meter, thereby achieving the purpose of increasing the diameter of the air inlet pipe, thereby delaying the blockage rate of the air inlet pipe and extending the life of the guide pipe. BRIEF DESCRIPTION OF THE DRAWINGS

[0025] In order to more clearly illustrate the technical solutions of the embodiments of the present invention, the following is a brief introduction to the drawings required for use in the embodiments. It should be understood that the following drawings only show certain embodiments of the present invention and therefore should not be regarded as limiting the scope. For ordinary technicians in this field, other relevant drawings can be obtained based on these drawings without creative work.

[0026] Figure 1 This is a structural diagram of a silane gas inlet device for a reactor based on LPCVD technology in the utility model;

[0027] Figure 2 This is a schematic diagram of the structure of a reactor tube of a silane gas inlet device of a reactor based on LPCVD technology in the utility model;

[0028] In the figure, 1. furnace pipe; 2. air inlet pipe; 3. connecting piece; 4. reducing rod; 5. exhaust hole; 6. spray pipe; 7. air outlet; 8. furnace tail; 9. furnace mouth; 10. furnace tail cover; 11. furnace door; 12. connecting pipe; 13. gas source bottle VMB cabinet; 14. pneumatic diaphragm valve; 15. flow meter; 16. vacuum pump; 17. connecting pipe; 18. butterfly valve; 19. support plate; 20. straight connecting pipe; 21. branch connecting pipe. DETAILED DESCRIPTION

[0029] In order to make the purpose, technical solutions and advantages of the embodiments of the present invention clearer, the technical solutions in the embodiments of the present invention will be clearly and completely described below in conjunction with the drawings in the embodiments of the present invention. Obviously, the described embodiments are part of the embodiments of the present invention, not all of the embodiments. Therefore, the following detailed description of the embodiments of the present invention provided in the drawings is not intended to limit the scope of the utility model for protection, but merely represents the selected embodiments of the present invention. Based on the embodiments of the present invention, all other embodiments obtained by ordinary technicians in this field without making creative work are within the scope of protection of the present invention.

[0030] This embodiment uses a reducing rod installed at the end of the intake pipe in the air inlet direction. The reducing rod increases the flow rate of the silane gas when it enters the intake pipe, allowing the silane gas to quickly fill the intake pipe and then diffuse out through the spray pipe. The connection of the reducing rod allows the silane gas to quickly reach the closed end of the intake pipe, thereby making the silane gas diffused out of the reactor tube more uniform. The specific embodiment is as follows:

[0031] like Figure 1-2As shown, a silane air intake device for a reactor based on LPCVD technology is characterized in that it includes a reactor tube 1 and a plurality of air intake pipes 2 arranged near the inner wall of the reactor tube 1, one end of the air intake pipe 2 is set as a closed end and the other end is fixedly connected to a connector 3, a reducing connecting rod 4 is provided at the end of the air intake pipe 2 close to the connector 3, the inner diameter of the reducing connecting rod 4 away from the connector 3 is larger than the inner diameter of the air intake pipe 2, a plurality of exhaust holes 5 are provided on both sides of the air intake pipe 2 adjacent to the inner wall of the reactor tube 1, a spray pipe 6 is installed on the exhaust hole 5, and a plurality of air outlet holes 7 for dispersing silane gas are provided on the spray pipe 6, and the aperture of the air outlet hole 7 increases gradually along the direction from the open end to the closed end of the air intake pipe 2.

[0032] Here, a reducing rod 4 is provided at the end of the air inlet pipe 2 in the air inlet direction. The setting of the reducing rod 4 increases the flow rate of the silane gas when it enters the air inlet pipe 2, so that the silane gas can quickly fill the air inlet pipe 2 and then diffuse out through the spray pipe 6. The connection of the reducing rod 4 enables the silane gas to quickly reach the closed end of the air inlet pipe 2, thereby making the silane gas diffused out of the reaction furnace tube 1 more uniform, thereby avoiding uneven film deposition on the silicon wafer in the reaction furnace tube 1.

[0033] As a preferred embodiment, several spray pipes 6 are arranged at equal distances from the inner wall of the reaction furnace tube 1, and the spray pipes 6 on the same cross section of the reaction furnace tube 1 form an arc-shaped diffusion circle. The air outlet 7 is opened on the side away from the inner wall of the reaction furnace tube 1, and the aperture of the air outlet 7 decreases successively along the direction from the free end of the spray pipe 6 to the air inlet pipe 2.

[0034] Here, the spray pipe 6 is set to be equidistant from the inner wall of the reactor tube 1, and the arc-shaped diffusion circle formed by the combination allows the spray pipe 6 to surround the silicon wafers in the reactor tube 1, which can make the diffusion of silane in the reactor tube 1 more uniform. In addition, to avoid uneven silane diffusion from the spray pipe 6, the aperture of the exhaust port is set to decrease from the free end of the spray pipe 6 to the connection between the spray pipe 6 and the air inlet pipe 2. This prevents the amount of silane gas diffused by the length of the spray pipe 6 from being affected by the amount of gas diffusion, making the diffused gas more uniform, maintaining a uniform silane gas concentration throughout the reactor tube 1, and maintaining a uniform deposition thickness throughout the silicon wafers. This can reduce the occurrence of uneven silicon diffusion during the silicon wafer production process, improve the thickness uniformity within the silicon wafers, and significantly increase the silicon wafer production yield.

[0035] As a preferred embodiment, the two ends of the reaction furnace tube 1 are respectively a furnace tail 8 and a furnace mouth 9, the furnace tail 8 is provided with a furnace tail cover 10, and the furnace mouth 9 is provided with a furnace door 11, the open end of the air inlet pipe 2 passes through the furnace tail cover 10 and is connected to a connecting pipe 12, the connecting piece 3 is detachably connected to the connecting pipe 12, and the connecting piece 3 is placed on the outside of the reaction furnace tube 1.

[0036] Here, the connecting piece 3 is placed on the outside of the furnace tail cover 10, and the connecting piece 3 and the connecting pipe 12 are set to be detachable, which is convenient for connecting the pipelines and also convenient for disassembly and replacement of the air inlet pipe 2.

[0037] As a preferred embodiment, the output end 13 of the gas source bottle VMB cabinet is provided near the furnace tail cover plate 10, and the output end 13 of the gas source bottle VMB cabinet is connected to the free end of the connecting pipe 12. The connecting pipe 12 near the gas source bottle VMB cabinet 13 is connected in sequence with a pneumatic diaphragm valve 14 and a flow meter 15.

[0038] Here, the air pipe is provided outside the reactor tube 1 to stabilize the air pressure entering the air inlet pipe 2, preventing the air intake from being affected by an excessively long pipe. Furthermore, a pneumatic valve and flow meter 15 are provided on the pipe connecting the reactor tube 1 to more accurately control the amount of gas entering the reactor tube 1, ensuring a more complete reaction and avoiding waste of silane gas. The flow meter controls the gas flow in the air inlet pipe 2, thereby increasing the diameter of the air inlet pipe 2, slowing down the blockage of the air inlet pipe 2 and extending the life of the flow guide pipe.

[0039] As a preferred embodiment, the connecting pipe 12 includes a straight connecting pipe 20 and a branch connecting pipe 21. The straight connecting pipe is connected to the gas source bottle VMB cabinet 13, the branch connecting pipe 21 is connected to the air inlet pipe 2, and the pneumatic diaphragm valve 14 and the flow meter 15 are installed on the straight connecting pipe 20.

[0040] As a preferred embodiment, a vacuum pump 16 is provided near the furnace tail cover plate 10, and the reaction furnace tube 1 is connected to the vacuum pump 16 through a connecting pipe 17. The end of the connecting pipe 17 facing away from the vacuum pump 16 passes through the furnace tail cover plate 10 and is connected to the interior of the reaction furnace tube 1. A butterfly valve 18 is provided on the connecting pipe 17 near the vacuum pump 16.

[0041] Here, a vacuum pump 16 is arranged on the furnace tail cover plate 10, and the air inlet pipe 2 is directly connected to the vacuum pump 16 and extends into the furnace tube 1 from the tail end of the furnace tube 1. The vacuum pump 16 is connected to the tail end of the furnace tube 1 for exhaust, so that the silane gas entering the furnace tube 1 flows to the tail end of the furnace tube 1 along with the air flow, and a reactant-loaded product surface will be generated during the flow process.

[0042] As a preferred embodiment, the connecting member 3 includes an internal threaded connecting nut and a gland fixedly connected to the connecting nut. The gland is fixedly connected to the reducing connecting rod 4 through an auxiliary rod. An external thread matching the connecting nut is provided on the outer wall of the end of the connecting pipe 12 facing away from the gas source bottle VMB cabinet 13. The connecting nut is threadedly connected to the connected pipe 12.

[0043] As a preferred embodiment, a support plate 19 for supporting the end of the air inlet pipe 2 is provided on the inner wall of the reaction furnace tube 1 near the furnace port 9 , and the support plate 19 corresponds to the air inlet pipe 2 .

[0044] As a preferred embodiment, a silicon wafer carrier is provided at the center of the reaction furnace tube 1 , and the silicon wafer carrier is used to place silicon wafers.

[0045] As a preferred embodiment, the air inlet pipe 2 is made of stainless steel.

[0046] The above is only a preferred embodiment of the present invention and is not intended to limit the present invention. For those skilled in the art, various modifications and variations of the present invention are possible. Any modifications, equivalent substitutions, improvements, etc. made within the spirit and principles of the present invention shall be included in the scope of protection of the present invention.

Claims

1. A silane gas inlet device for a reactor based on LPCVD technology, characterized in that: The invention comprises a reaction furnace tube (1) and a plurality of air inlet pipes (2) arranged near the inner wall of the reaction furnace tube (1), wherein one end of the air inlet pipe (2) is set as a closed end and the other end is fixedly connected to a connecting piece (3), a reducing connecting rod (4) is provided at one end of the air inlet pipe (2) near the connecting piece (3), the inner diameter of the reducing connecting rod (4) at the end away from the connecting piece (3) is larger than the inner diameter of the air inlet pipe (2), a plurality of exhaust holes (5) are provided on both sides of the air inlet pipe (2) adjacent to the inner wall of the reaction furnace tube (1), a spray pipe (6) is installed on the exhaust hole (5), and a plurality of air outlet holes (7) for dispersing silane gas are provided on the spray pipe (6), and the aperture of the air outlet holes (7) increases gradually along the direction from the open end to the closed end of the air inlet pipe (2).

2. The silane gas inlet device for a reactor based on LPCVD technology according to claim 1, characterized in that: The plurality of spray pipes (6) are arranged at equal distances from the inner wall of the reaction furnace tube (1); the spray pipes (6) on the same cross section of the reaction furnace tube (1) form an arc-shaped diffusion circle; the air outlet holes (7) are opened on a side away from the inner wall of the reaction furnace tube (1); and the apertures of the air outlet holes (7) decrease in sequence along the direction from the free end of the spray pipe (6) to the air inlet pipe (2).

3. The silane gas inlet device for a reactor based on LPCVD technology according to claim 1, characterized in that: The two ends of the reaction furnace tube (1) are a furnace tail (8) and a furnace mouth (9), respectively; the furnace tail (8) is provided with a furnace tail cover plate (10), and the furnace mouth (9) is provided with a furnace door (11); the open end of the air inlet pipe (2) passes through the furnace tail cover plate (10) and is connected to a connecting pipe (12); the connecting piece (3) is detachably connected to the connecting pipe (12), and the connecting piece (3) is placed outside the reaction furnace tube (1).

4. The silane gas inlet device for a reactor based on LPCVD technology according to claim 2, characterized in that: A gas source bottle VMB cabinet (13) is provided near the furnace tail cover plate (10), the output end of the gas source bottle VMB cabinet (13) is connected to the free end of the connecting pipe (12), and a pneumatic diaphragm valve (14) and a flow meter (15) are sequentially connected to the connecting pipe (12) near the output end of the gas source bottle VMB cabinet (13).

5. The silane gas inlet device for a reactor based on LPCVD technology according to claim 4, characterized in that: The connecting pipe (12) includes a straight connecting pipe (20) and a branch connecting pipe (21), wherein the straight connecting pipe is connected to the output end of the gas source bottle VMB cabinet (13), and the branch connecting pipe (21) is connected to the air inlet pipe (2). The pneumatic diaphragm valve (14) and the flow meter (15) are installed on the straight connecting pipe (20).

6. The silane gas inlet device for a reactor based on LPCVD technology according to claim 2, characterized in that: A vacuum pump (16) is provided near the furnace tail cover plate (10), and the reaction furnace tube (1) is connected to the vacuum pump (16) via a connecting pipe (17). An end of the connecting pipe (17) facing away from the vacuum pump (16) passes through the furnace tail cover plate (10) and is connected to the interior of the reaction furnace tube (1). A butterfly valve (18) is provided on the connecting pipe (17) near the vacuum pump (16).

7. The silane gas inlet device for a reactor based on LPCVD technology according to claim 4, characterized in that: The connecting piece (3) comprises an internal threaded connecting nut and a gland fixedly connected to the connecting nut, the gland fixedly connected to the reducing connecting rod (4) via an auxiliary rod, an external thread matching the connecting nut is provided on the outer wall of one end of the connecting pipe (12) facing away from the gas source bottle VMB cabinet (13), and the connecting nut is threadedly connected to the connected pipe (12).

8. The silane gas inlet device for a reactor based on LPCVD technology according to claim 2, characterized in that: A support plate (19) for supporting the end of the air inlet pipe (2) is provided on the inner wall of the reaction furnace tube (1) near the furnace port (9), and the support plate (19) corresponds to the air inlet pipe (2).

9. The silane gas inlet device for a reactor based on LPCVD technology according to claim 1, characterized in that: A silicon wafer carrier is provided at the center of the reaction furnace tube (1), and the silicon wafer carrier is used for placing silicon wafers.

10. The silane gas inlet device for a reactor based on LPCVD technology according to claim 1, characterized in that: The air inlet pipe (2) is made of stainless steel.

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