Semiconductor laser aging base

Abstract

The utility model discloses a semiconductor laser aging base, which is used for supporting a laser and comprises a top wall, a bottom wall, two side walls connected with the top wall and the bottom wall and a water flow channel enclosed by the top wall, the bottom wall and the two side walls, and the water flow channel penetrates through the semiconductor laser aging base front and back. The semiconductor laser aging base comprises a top wall and a bottom wall, the laser is placed on the bottom wall, the semiconductor laser aging base further comprises a plurality of middle partition walls arranged in the water flow channel at intervals left and right, the middle partition walls are connected with the top wall and the bottom wall, the middle partition walls are provided with a plurality of through holes penetrating through the middle partition walls left and right, and water flow passing through the semiconductor laser aging base is guided to form an efficient'turbulent flow 'state. The turbulence effect significantly improves the heat exchange process, and greatly enhances the heat dissipation performance of the laser.

Description

Technical Field

[0001] The utility model relates to a supporting base device, in particular to a semiconductor laser aging base. Background Art

[0002] When a semiconductor laser is operating, current is injected into the active region of the laser diode (LD), stimulating the recombination of electrons and holes, which in turn generates photons. However, not all electrical energy is converted into light in this process; only a portion of the energy is output as photons. When electrons and holes recombine, energy is not always released as photons. Sometimes, energy is transferred to another electron or hole, exciting it to a higher energy state. This process is called Auger recombination (typo?). Electrons excited to a high energy state may transfer energy to the crystal lattice, generating heat, or they may escape the active region by crossing a potential barrier. This non-radiative recombination process generates a large amount of heat. Improving heat dissipation efficiency is crucial during laser aging. While traditional heat dissipation methods such as heat sinks, fans, and water cooling are widely used, their effectiveness is insufficient. More efficient heat dissipation solutions are needed to address the heat accumulation caused by laser aging.

[0003] Therefore, it is necessary to design a new semiconductor laser aging base to solve the above technical problems. Utility Model Content

[0004] The purpose of the utility model is to provide a body laser aging base with high-efficiency heat dissipation effect.

[0005] To achieve the aforementioned objectives, the present invention adopts the following technical solution: a semiconductor laser aging base for supporting a laser, comprising a top wall, a bottom wall, two side walls connecting the top wall and the bottom wall, and a water flow channel enclosed by the top wall, the bottom wall and the two side walls, the water flow channel passing through the semiconductor laser aging base from front to back, the laser being placed on the bottom wall, and further comprising a plurality of middle partition walls arranged in the water flow channel at intervals on the left and right, the middle partition walls connecting the top wall and the bottom wall, and the middle partition walls being provided with a plurality of through holes passing through the middle partition walls on the left and right.

[0006] As a further improvement, the through holes are arranged in a matrix on the middle partition wall.

[0007] As a further improvement, the through holes on the two adjacent middle partition walls are aligned left to right.

[0008] As a further improvement, the water flow channel includes a water flow inlet section at the front end, a water flow outlet section at the rear end, and a middle section connected to the water flow inlet section and the water flow outlet section, and the middle partition wall is located in the middle section.

[0009] As a further improvement, the top wall is provided with a plurality of grooves spaced apart from each other for accommodating the laser, and the grooves are close to one of the side walls.

[0010] As a further improvement, the semiconductor laser aging base is in the shape of a long strip extending forward and backward.

[0011] As a further improvement, the semiconductor laser aging base is made of metal material through 3D printing or metal brazing technology.

[0012] As a further improvement, the through hole is configured to be circular or square.

[0013] As a further improvement, the middle partition wall is perpendicular to the top wall or the bottom wall.

[0014] As a further improvement, the partition walls are arranged at equal or unequal intervals.

[0015] The semiconductor laser aging base of the present invention also includes a plurality of middle partitions arranged at intervals on the left and right in the water flow channel, the middle partitions connecting the top wall and the bottom wall, and the middle partitions are provided with a plurality of through holes penetrating the middle partitions on the left and right. With such an ingenious design, the water flow through the semiconductor laser aging base is guided to form an efficient "turbulent" state. This turbulent effect significantly improves the heat exchange process and greatly enhances the heat dissipation performance of the laser. BRIEF DESCRIPTION OF THE DRAWINGS

[0016] Figure 1 This is a three-dimensional diagram of the semiconductor laser aging base of the utility model.

[0017] Figure 2 This is a longitudinal cross-sectional view of the semiconductor laser aging base of the utility model.

[0018] Figure 3 This is a transverse cross-sectional view of the semiconductor laser aging base of the utility model. DETAILED DESCRIPTION

[0019] See also Figures 1 to 3As shown, the present invention discloses a semiconductor laser aging base 100 for supporting a laser. The semiconductor laser aging base 100 is in the shape of an elongated strip and is made of a highly thermally conductive metal material, such as copper or a copper alloy, through 3D printing or metal brazing technology. The semiconductor laser aging base 100 includes a top wall 11, a bottom wall 12 opposite the top wall 11, and two opposing side walls 13 connecting the top wall 11 and the bottom wall 12. The top wall 11, the bottom wall 12, and the two side walls 13 are connected to form a water flow channel 15 that runs through the semiconductor laser aging base 100 from front to back. The water flow channel includes a water flow inlet section 151 at the front, a water flow outlet section 152 at the rear, and an intermediate section 153 connecting the water flow inlet section 151 and the water flow outlet section 152. The top wall 11 is provided with grooves 112 arranged in a front-to-back relationship for accommodating the laser. The groove 112 is adjacent to one of the side walls 13.

[0020] The semiconductor laser aging base 100 also includes a plurality of intermediate walls 16 arranged at equal or unequal intervals. The intermediate walls 16 are parallel to each other and located in the middle section 153. The intermediate walls 16 perpendicularly connect the top wall 11 and the bottom wall 12. Each intermediate wall 16 is provided with a plurality of circular through holes 162 extending therethrough. The through holes 162 are arranged in a matrix on the intermediate walls 16, and are arranged uniformly and regularly for ease of processing. The through holes 162 on each pair of adjacent intermediate walls 16 are aligned one by one. In other embodiments, the through holes are square or have other shapes.

[0021] When the semiconductor laser aging base 100 is in operation, the laser is positioned in the groove 112. Water enters through the water inlet section 151, passes through the middle section 153, and then flows out of the semiconductor laser aging base 100 through the water outlet section 152. The semiconductor laser aging base 100 effectively dissipates heat and cools the laser. The semiconductor laser aging base 100 has through-holes 162 provided in the middle partition wall 16. This ingenious design guides the water flow through the semiconductor laser aging base 100 into a highly efficient "turbulent" state. This turbulent effect significantly improves the heat exchange process and greatly enhances the heat dissipation performance of the laser. Specifically, there is a close connection between turbulent flow characteristics and heat exchange: turbulence promotes turbulence and mixing of the water flow, effectively increasing the heat exchange area and efficiency, thereby achieving rapid heat removal from the laser and significantly improving the heat dissipation effect.

[0022] Although the preferred embodiments of the present invention have been disclosed for illustrative purposes, those skilled in the art will appreciate that various modifications, additions and substitutions are possible, without departing from the scope and spirit of the invention as disclosed in the accompanying claims.

Claims

1. A semiconductor laser aging base for supporting a laser, comprising a top wall, a bottom wall, two side walls connecting the top wall and the bottom wall, and a water flow channel enclosed by the top wall, the bottom wall, and the two side walls, wherein the water flow channel passes through the semiconductor laser aging base from front to back, and the laser is placed on the bottom wall, characterized in that: It also includes a plurality of middle partition walls arranged in the water flow channel at intervals on the left and right, the middle partition walls connecting the top wall and the bottom wall, and the middle partition walls are provided with a plurality of through holes penetrating the middle partition walls on the left and right.

2. The semiconductor laser aging base according to claim 1, characterized in that: The through holes are arranged in a matrix on the middle partition wall.

3. The semiconductor laser aging base according to claim 1, characterized in that: The through holes on the two adjacent middle partition walls are aligned one by one.

4. The semiconductor laser aging base according to claim 1, characterized in that: The water flow channel includes a water flow inlet section at the front end, a water flow outlet section at the rear end, and a middle section connected to the water flow inlet section and the water flow outlet section, and the middle partition wall is located in the middle section.

5. The semiconductor laser aging base according to claim 1, characterized in that: The top wall is provided with a plurality of grooves spaced apart from each other for placing the laser, and the grooves are close to one of the side walls.

6. The semiconductor laser aging base according to claim 1, characterized in that: The semiconductor laser aging base is in the shape of a long strip extending forward and backward.

7. The semiconductor laser aging mount according to claim 1, characterized in that: The semiconductor laser aging base is made of metal material through 3D printing or metal brazing technology.

8. The semiconductor laser aging mount according to claim 1, characterized in that: The through hole is configured to be circular or square.

9. The semiconductor laser aging mount according to claim 1, characterized in that: The middle partition wall is perpendicular to the top wall or the bottom wall.

10. The semiconductor laser aging mount according to claim 1, wherein: The middle partition walls are arranged at equal or unequal intervals.

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