SiC epitaxial conveying system

Abstract

The utility model relates to the technical field of semiconductors, in particular to a SiC epitaxial conveying system, which comprises a manipulator for grabbing or placing a wafer, a graphite ring or a graphite disc, a merging and splitting module for realizing merging or splitting of the graphite ring and the wafer or the graphite disc, an artificial platform and a reaction chamber, the artificial platform is used for bearing the wafer, the graphite ring and the graphite disc which are combined. According to the utility model, wafer processing can be smoothly realized when the merging and splitting module fails, wafer production is not delayed, wafer transportation stagnation is prevented, continuous production and processing are facilitated, and processing efficiency is improved.

Description

Technical Field

[0001] The utility model relates to the technical field of semiconductors, in particular to a SiC epitaxial transmission system. Background Art

[0002] Typically, a semiconductor device manufacturing process is performed by repeatedly performing multiple unit processes on a wafer, such as an exposure process, an etching process, a diffusion process, a deposition process, and a metal process. Wafers loaded on a carrier within the facility are introduced or taken out by a wafer transfer device.

[0003] The wafer transfer device is equipped with a robot arm that supports the wafer at the front end of the arm. However, if the wafer transfer device malfunctions or stops, the wafer transportation is stalled, making it difficult to continue production and processing, affecting processing efficiency. Utility Model Content

[0004] In response to the deficiencies in the prior art, the utility model provides a SiC epitaxial transport system that can smoothly implement wafer processing when a merging and splitting module fails, without delaying wafer production, preventing wafer transportation stagnation, facilitating continued production and processing, and improving processing efficiency.

[0005] In order to solve the above technical problems, the present invention adopts the following technical solutions:

[0006] The utility model provides a SiC epitaxial transmission system, comprising a manipulator for grabbing or placing a wafer, a graphite ring or a graphite disk, a merging and splitting module for merging or splitting the graphite ring and the wafer or the graphite disk, an artificial platform and a reaction chamber;

[0007] The artificial platform is used to carry the combined wafer, graphite ring and graphite disk;

[0008] When the wafer, graphite ring and graphite disk are combined, the robot grabs or places the graphite disk to realize the overall transfer of the wafer, graphite ring and graphite disk;

[0009] When the graphite ring and the graphite disk are combined, the manipulator grabs or places the graphite disk to realize the overall transfer of the graphite ring and the graphite disk;

[0010] When it is necessary to merge the wafer, graphite ring and graphite disk, the manipulator grabs the merged graphite ring and graphite disk and places them in the merging and splitting module, the merging and splitting module splits the graphite ring and graphite disk, the manipulator grabs the graphite disk and separates it from the merging and splitting module, so that the merging and splitting module supports the graphite ring, the manipulator grabs the wafer and places it in the merging and splitting module, the merging and splitting module merges the wafer and the graphite ring, the manipulator grabs the aforementioned detached graphite disk to the merging and splitting module, the merging and splitting module merges the graphite disk and the graphite ring, thereby achieving the merging of the wafer, graphite ring and graphite disk;

[0011] When the merging and splitting module is in normal use, the robot takes out the merged wafer, graphite ring and graphite disk and places them into the reaction chamber. After epitaxial growth in the reaction chamber, the robot takes out the merged wafer, graphite ring and graphite disk from the reaction chamber.

[0012] When the merging and splitting module fails, the merged wafers, graphite rings and graphite disks are manually placed on the manual platform, and the robot takes the merged wafers, graphite rings and graphite disks at the manual platform and places them into the reaction chamber. After epitaxial growth in the reaction chamber, the robot takes out the merged wafers, graphite rings and graphite disks from the reaction chamber and places them on the manual platform. The merged wafers, graphite rings and graphite disks that have undergone epitaxial reaction at the manual platform are manually taken away, and the merged wafers, graphite rings and graphite disks that have not undergone epitaxial reaction are placed on the manual platform.

[0013] The merging and splitting module includes a base frame, a plurality of ring brackets connected to the top of the base frame, a tray and a lifting mechanism. The ring brackets are distributed around the base frame. The lifting mechanism is connected to the tray in a driving manner. The base frame is penetrated by movable openings at the top and bottom. The output end of the lifting mechanism is passed through the movable opening. The lifting mechanism drives the tray to move up and down, so that the tray moves up and down inside the ring brackets.

[0014] When the graphite ring and the graphite disk are separated, the lifting mechanism drives the tray to move upward to the required height, and the manipulator places the merged graphite disk and the graphite ring into the merging and splitting module. The ring bracket and the tray support the graphite ring and the graphite disk respectively. The lifting mechanism drives the tray to move downward, so that the graphite disk moves downward synchronously with the tray to be separated from the graphite ring;

[0015] When the wafer is combined with the graphite ring, the lifting mechanism drives the tray to move upward to a desired height, the robot places the wafer into the tray, and the lifting mechanism descends to drive the wafer to descend synchronously, so that the wafer is supported by the graphite ring.

[0016] The merging and splitting module further includes a merging and splitting driving mechanism, a merging and splitting ring light source, a surface light source, and a collection device. The merging and splitting driving mechanism is used to drive the base frame to move along the X-axis and the Y-axis and to rotate the base frame. The merging and splitting ring light source is located between the base frame and the surface light source. The front end of the collection device passes through the surface light source and corresponds to the merging and splitting ring light source.

[0017] When the graphite ring is searching for an edge, the ring bracket supports the graphite ring, the surface light source and the detachable ring light source provide supplementary light for the graphite ring and the acquisition device, the acquisition device takes visual photos to determine the position and angle of the graphite ring, and the detachable driving mechanism drives the base frame to move along the X-axis and / or Y-axis according to the data obtained by the acquisition device, and causes the base frame to rotate, thereby adjusting the position and angle of the ring bracket and the graphite ring to achieve precise positioning of the graphite ring.

[0018] Among them, the disassembly and assembly driving mechanism includes a disassembly and assembly X-axis module, a disassembly and assembly Y-axis module drivingly connected to the disassembly and assembly Y-axis module, and a disassembly and assembly rotation unit drivingly connected to the disassembly and assembly Y-axis module. The disassembly and assembly X-axis module drives the disassembly and assembly Y-axis module to move along the X-axis, and the disassembly and assembly Y-axis module drives the disassembly and assembly rotation unit to move along the Y-axis. The disassembly and assembly rotation unit is drivingly connected to the base frame, and the disassembly and assembly rotation unit is used to drive the base frame to rotate. The disassembly and assembly rotation unit is installed with a protective cover, and the protective cover is penetrated by mounting openings at the top and bottom, and the lifting mechanism is passed through the mounting opening.

[0019] The SiC epitaxial transmission system further includes a loading box for storing wafers, a disk ring placement box for storing merged graphite rings and graphite disks, an edge finder for edge finding of wafers, and a correction platform for edge finding of graphite disks.

[0020] When the wafer is edge-finding, the manipulator grabs the merged graphite disc and graphite ring from the disc-ring placing box and loads them into the merging and splitting module. The merging and splitting module separates the graphite disc from the graphite ring. The manipulator places the graphite disc on the correction platform for edge-finding. The graphite ring is edge-finding through the merging and splitting module. Then, the manipulator grabs the wafer and graphite disc after edge-finding respectively and loads them into the merging and splitting module, so that the wafer and graphite disc are merged with the graphite ring in turn. The manipulator transfers the merged wafer, graphite ring and graphite disc as a whole to the reaction chamber.

[0021] After the wafer has undergone epitaxial growth, the robot puts the merged wafer, graphite ring and graphite disk from the reaction chamber into the merging and splitting module, the merging and splitting module separates the graphite disk from the graphite ring, the robot puts the graphite disk into the correction platform for edge finding, the merging and splitting module separates the wafer from the graphite ring, the robot takes the wafer away and puts it into the loading box, the robot puts the graphite disk into the merging and splitting module, the merging and splitting module merges the graphite disk and the graphite ring, and the robot puts the merged graphite ring and graphite disk as a whole into the disk-ring placement box.

[0022] The correction platform includes a correction platform, a correction drive mechanism connected to the correction platform, a correction ring light source, and a correction collector. The correction drive mechanism is used to drive the correction platform to move along the X-axis and the Y-axis and to make the correction platform rotate. The correction ring light source is located between the correction platform and the correction collector, and the correction collector corresponds to the correction ring light source.

[0023] When the graphite disk is finding its edge, the correction table supports the graphite disk, the correction ring light source provides fill light for the graphite disk, the correction collector takes visual photos to determine the position and angle of the graphite disk, and the correction drive mechanism drives the correction table to move along the X-axis and / or Y-axis according to the data obtained by the correction collector, and causes the correction table to rotate, thereby adjusting the position and angle of the graphite disk to achieve precise positioning of the graphite disk.

[0024] Among them, the correction drive mechanism includes a correction X-axis module, a correction Y-axis module drivingly connected to the correction X-axis module, and a correction rotation unit drivingly connected to the correction Y-axis module. The correction X-axis module drives the correction Y-axis module to move along the X-axis, and the correction Y-axis module drives the correction rotation unit to move along the Y-axis. The correction rotation unit is drivingly connected to the correction table, and the correction rotation unit is used to drive the correction table to rotate.

[0025] Wherein, the ring bracket is provided with a ring supporting opening, and when the ring bracket supports the graphite ring, the bottom outer edge of the graphite ring extends into the ring supporting opening.

[0026] Among them, the bottom end of the graphite ring is provided with an annular disk accommodating groove, and when the graphite disk and the graphite ring are combined, the top outer edge of the graphite disk extends into the disk accommodating groove, and the top end of the graphite ring is provided with an annular sheet accommodating groove, and when the wafer and the graphite ring are combined, the bottom outer edge of the wafer extends into the sheet accommodating groove.

[0027] Beneficial effects of the utility model:

[0028] When the merging and splitting module is in normal use, the robot takes out the merged wafers, graphite rings and graphite disks, and places them into the reaction chamber. After the epitaxial growth in the reaction chamber, the robot takes out the merged wafers, graphite rings and graphite disks from the reaction chamber to meet the normal processing needs of the wafers; when the merging and splitting module fails, the merged wafers, graphite rings and graphite disks are manually placed on the manual platform, and the robot takes out the merged wafers, graphite rings and graphite disks at the manual platform and places them into the reaction chamber. After the epitaxial growth in the reaction chamber, the robot takes out the merged wafers, graphite rings and graphite disks from the reaction chamber and places them on the manual platform. The robot takes away the merged wafers, graphite rings and graphite disks that have undergone epitaxial reaction at the manual platform, and places the merged wafers, graphite rings and graphite disks that have not undergone epitaxial reaction on the manual platform. This can smoothly realize wafer processing when the merging and splitting module fails, without delaying wafer production, preventing wafer transportation stagnation, facilitating continued production and processing, and improving processing efficiency. BRIEF DESCRIPTION OF THE DRAWINGS

[0029] Figure 1 Schematic diagram of the three-dimensional structure of the SiC epitaxial transmission system.

[0030] Figure 2 Schematic diagram of the structure when the graphite ring and graphite disk are combined.

[0031] Figure 3 Schematic diagram of the exploded structure with wafer, graphite ring and graphite disk.

[0032] Figure 4 It is a three-dimensional diagram of the graphite ring, graphite disk and merged and split modules separated.

[0033] Figure 5 This is a schematic diagram of the positional relationship between the tray, graphite ring and ring bracket before the wafer and graphite ring are combined.

[0034] Figure 6 It is a schematic diagram of the three-dimensional structure of the merged and split modules.

[0035] Figure 7 Schematic diagram of the explosion structure of the disassembly and assembly drive mechanism.

[0036] Figure 8 Another three-dimensional structural schematic diagram of the SiC epitaxial transmission system.

[0037] Figure 9 Schematic diagram of the three-dimensional structure of the correction platform Figure 1 .

[0038] Figure 10 Schematic diagram of the three-dimensional structure of the correction platform Figure 2 .

[0039] Figure 11 Schematic diagram of the structure of the graphite ring and the ring bracket being separated.

[0040] Figure 12 Schematic diagram of the local structure when the graphite ring and graphite disk are separated.

[0041] Figure 13 This is a three-dimensional diagram of the wafer and graphite ring when separated.

[0042] 01. Wafer; 02. Graphite ring;

[0043] 021, disc receiving groove; 022, sheet receiving groove; 03, graphite disc;

[0044] 1. Robotic arm;

[0045] 2. Merge and split modules;

[0046] 21. Base frame; 211. Movable opening; 22. Ring bracket; 221. Support ring opening;

[0047] 23. Pallet; 24. Lifting mechanism; 25. Disassembly and assembly drive mechanism;

[0048] 251. Disassemble the X-axis module; 252. Disassemble the Y-axis module; 253. Disassemble the rotation unit;

[0049] 2531, protective cover; 2532, installation port;

[0050] 26. Disassembled ring light source; 27. Surface light source; 28. Collection equipment;

[0051] 3. Artificial platform;

[0052] 4. Reaction chamber;

[0053] 5. Loading box; 6. Coil ring storage box;

[0054] 7. Edge finder; 8. Correction platform;

[0055] 81. Deviation correction platform; 82. Deviation correction drive mechanism;

[0056] 821. Deviation correction X-axis module; 822. Deviation correction Y-axis module; 823. Deviation correction rotation unit; 83. Deviation correction ring light source; 84. Deviation correction collector. DETAILED DESCRIPTION

[0057] To facilitate understanding by those skilled in the art, the present invention is further described below with reference to examples and drawings. Specific implementation methods of the present invention will be described below. It should be noted that in the specific description of these implementation methods, for the sake of clarity and clarity, it is impossible for this specification to provide a detailed description of all features of the actual implementation methods.

[0058] refer to Figures 1 to 13 As shown, the utility model provides a SiC epitaxial transmission system, including a robot 1 for grabbing or placing a wafer 01, a graphite ring 02 or a graphite disk 03, a merging and splitting module 2 for realizing the merging or splitting of the graphite ring 02 with the wafer 01 or the graphite disk 03, an artificial platform 3 and a reaction chamber 4; the artificial platform 3 is used to carry the merged wafer 01, graphite ring 02 and graphite disk 03; when the wafer 01, the graphite ring 02 and the graphite disk 03 are merged, the robot 1 grabs or places the graphite disk 03 to realize the overall transfer of the wafer 01, the graphite ring 02 and the graphite disk 03; when the graphite ring 02 and the graphite disk 03 are merged, the robot 1 grabs or places the graphite disk 03 to realize the overall transfer of the graphite ring 02 and the graphite disk 03.

[0059] refer to Figures 1 to 3As shown, in actual application, the manipulator 1 is a dual-arm four-axis robot, and the manipulator 1 is provided with an adsorption arm to facilitate smooth grasping or placement of the wafer 01, the graphite ring 02 or the graphite disk 03. When the wafer 01, the graphite ring 02 and the graphite disk 03 need to be merged, the manipulator 1 grasps the merged graphite ring 02 and the graphite disk 03 and places them in the merging and splitting module 2. The merging and splitting module 2 splits the graphite ring 02 and the graphite disk 03, and the manipulator 1 grasps the graphite disk 03 to separate it from the merging and splitting module. 2. Make the merging and splitting module 2 support the graphite ring 02. The robot 1 grabs the wafer 01 and places it on the merging and splitting module 2. The merging and splitting module 2 merges the wafer 01 and the graphite ring 02. The robot 1 grabs the aforementioned detached graphite disk 03 to the merging and splitting module 2. The merging and splitting module 2 merges the graphite disk 03 with the graphite ring 02, thereby realizing the merging of the wafer 01, the graphite ring 02 and the graphite disk 03, which facilitates the robot 1 to quickly transfer the merged wafer 01, the graphite ring 02 and the graphite disk 03.

[0060] refer to Figure 1 As shown, when the merging and splitting module 2 is in normal use, the robot 1 takes out the merged wafer 01, graphite ring 02 and graphite disk 03, and puts them into the reaction chamber 4. Specifically, taking and placing the wafer 01, graphite ring 02 and graphite disk 03 in the reaction chamber 4 is a prior art, so it is not described in detail. After the epitaxial growth in the reaction chamber 4, the robot 1 takes out the merged wafer 01, graphite ring 02 and graphite disk 03 from the reaction chamber 4 to meet the normal processing requirements of the wafer 01; when the merging and splitting module 2 fails, the merged wafer 01, graphite ring 02 and graphite disk 03 are manually placed on the artificial platform 3, and the robot 1 takes the merged wafer 01, graphite ring 02 and graphite disk 03 at the artificial platform 3. The ink ring 02 and the graphite disk 03 are placed in the reaction chamber 4. After the epitaxial growth in the reaction chamber 4, the robot 1 takes out the merged wafer 01, graphite ring 02 and graphite disk 03 from the reaction chamber 4 and places them on the artificial platform 3. The merged wafer 01, graphite ring 02 and graphite disk 03 that have undergone epitaxial reaction on the artificial platform 3 are manually taken away, and the merged wafer 01, graphite ring 02 and graphite disk 03 that have not undergone epitaxial reaction are placed on the artificial platform 3. This can smoothly realize the processing of wafer 01 when a failure occurs in the merging and splitting module 2, without delaying the production of wafer 01, preventing the transportation of wafer 01 from stagnation, facilitating continued production and processing, and improving processing efficiency.

[0061] refer to Figure 4As shown, in this embodiment, the merging and splitting module 2 includes a base frame 21, a plurality of ring brackets 22 connected to the top of the base frame 21, a tray 23 and a lifting mechanism 24. The ring brackets 22 are distributed around the base frame 21, and the lifting mechanism 24 is driven and connected to the tray 23. The base frame 21 is penetrated by a movable opening 211 at the top and bottom. The output end of the lifting mechanism 24 is passed through the movable opening 211. The lifting mechanism 24 drives the tray 23 to move up and down, so that the tray 23 moves up and down on the inner side of the ring bracket 22. The structure is compact and space-saving.

[0062] In actual application, the lifting mechanism 24 is a pneumatic cylinder, an oil cylinder or an electric cylinder. The lifting mechanism 24 drives the tray 23 to move upward to the required height. The robot 1 places the merged graphite disk 03 and the graphite ring 02 into the merging and splitting module 2. The ring bracket 22 and the tray 23 support the graphite ring 02 and the graphite disk 03 respectively. The lifting mechanism 24 drives the tray 23 to move downward, so that the graphite disk 03 moves downward synchronously with the tray 23 to separate from the graphite ring 02, and the graphite ring 02 is placed on the ring bracket 22 to facilitate the merging of the graphite ring 02 and the wafer 01.

[0063] When the wafer 01 and the graphite ring 02 are combined, the lifting mechanism 24 drives the tray 23 to move upward to the required height. Figure 5 As shown, the robot 1 places the wafer 01 into the tray 23, and the lifting mechanism 24 descends to drive the wafer 01 to descend synchronously, so that the wafer 01 is supported by the graphite ring 02, and the wafer 01 and the graphite ring 02 are merged; similarly, after the graphite ring 02 and the wafer 01 are merged, the graphite disk 03 is loaded into the merging and splitting module 2 and the lifting mechanism 24 drives the graphite disk 03 to lift the graphite ring 02 and the wafer 01 upward, thus completing the merging of the wafer 01, the graphite ring 02 and the graphite disk 03. The structure is ingenious, which facilitates the rapid merging and splitting, and ensures the processing quality of the wafer 01.

[0064] refer to Figure 6As shown, in this embodiment, the merging and splitting module 2 also includes a merging and splitting driving mechanism 25, a merging and splitting ring light source 26, a surface light source 27 and a collection device 28. The merging and splitting driving mechanism 25 is used to drive the base frame 21 to move along the X-axis and Y-axis and make the base frame 21 rotate. The merging and splitting ring light source 26 is located between the base frame 21 and the surface light source 27. The front end of the collection device 28 passes through the surface light source 27 and corresponds to the merging and splitting ring light source 26. In actual application, the graphite ring 02 is supported by the ring bracket 22, and the surface light source 27 and the merging and splitting ring light source 26 are used to fill in the light for the graphite ring 02 and the collection device 28. The collection device 28 visually takes pictures to determine the position and angle of the graphite ring 02. The merging and splitting driving mechanism 25 drives the base frame 21 to move along the X-axis and / or Y-axis according to the data obtained by the collection device 28, and makes the base frame 21 rotate, thereby adjusting the position and angle of the ring bracket 22 and the graphite ring 02, realizing accurate positioning of the graphite ring 02, and smoothly finding the edge of the graphite ring 02.

[0065] refer to Figure 7 As shown, in this embodiment, the disassembly and assembly driving mechanism 25 includes a disassembly and assembly X-axis module 251, a disassembly and assembly Y-axis module 252 drivingly connected to the disassembly and assembly Y-axis module 252, and a disassembly and assembly rotation unit 253 drivingly connected to the disassembly and assembly Y-axis module 252. The disassembly and assembly X-axis module 251 and the disassembly and assembly Y-axis module 252 are linear motors, cylinders or electric cylinders. The disassembly and assembly X-axis module 251 drives the disassembly and assembly Y-axis module 252 to move along the X-axis, and the disassembly and assembly Y-axis module 252 drives the disassembly and assembly rotation unit 253. Moving along the Y-axis, the disassembling and rotating unit 253 is a servo motor or a driving motor, and the disassembling and rotating unit 253 is driven and connected to the base frame 21. The disassembling and rotating unit 253 is used to drive the base frame 21 to rotate. The disassembling and rotating unit 253 is installed with a shield 2531, and the shield 2531 is penetrated by mounting openings 2532 at the top and bottom. The lifting mechanism 24 is passed through the mounting opening 2532, and the front end of the lifting mechanism 24 is hidden in the shield 2531. The structure is compact and space-saving.

[0066] refer to Figure 8 As shown, in this embodiment, the SiC epitaxial transport system also includes a loading box 5 for storing wafers 01, a disk ring placement box 6 for storing merged graphite rings 02 and graphite disks 03, an edge finder 7 for edge finding of the wafer 01, and a correction platform 8 for edge finding of the graphite disk 03.

[0067] In actual application, the robot 1 grabs the merged graphite disk 03 and graphite ring 02 from the disk and ring placement box 6 and loads them into the merging and splitting module 2. The merging and splitting module 2 separates the graphite disk 03 from the graphite ring 02. The robot 1 places the graphite disk 03 on the correction platform 8 for edge finding. The graphite ring 02 is edge found through the merging and splitting module 2. Then, the robot 1 grabs the wafer 01 and graphite disk 03 after edge finding and loads them into the merging and splitting module 2, so that the wafer 01 and the graphite disk 03 are merged with the graphite ring 02 in turn. The robot 1 transfers the merged wafer 01, graphite ring 02 and graphite disk 03 as a whole to the reaction chamber 4 for epitaxial growth, thereby realizing automatic grabbing of the wafer 01, graphite ring 02 and graphite disk 03, and accurately merging the wafer 01, graphite ring 02 and graphite disk 03 after edge finding, thereby realizing precise positioning of the wafer 01 and ensuring the processing quality of the wafer 01.

[0068] After the wafer 01 undergoes epitaxial growth, the robot 1 places the merged wafer 01, graphite ring 02 and graphite disk 03 from the reaction chamber 4 into the merging and splitting module 2. The merging and splitting module 2 separates the graphite disk 03 from the graphite ring 02. The robot 1 places the graphite disk 03 on the correction platform 8 for edge finding. The merging and splitting module 2 effectively supports the graphite ring 02, thereby achieving independent edge finding of the graphite disk 03 and improving edge finding accuracy. The merging and splitting module 2 separates the wafer 01 and the graphite ring 02. Separation, the robot 1 takes away the wafer 01 and puts it into the loading box 5, the robot 1 puts the graphite disk 03 into the merging and splitting module 2, the merging and splitting module 2 merges the graphite disk 03 and the graphite ring 02, the robot 1 puts the merged graphite ring 02 and graphite disk 03 as a whole into the disk-ring placement box 6, and smoothly places the merged graphite ring 02 and graphite disk 03 back into the disk-ring placement box 6, which is convenient for recycling the merged graphite ring 02 and graphite disk 03 and convenient for the robot 1 to pick up and place.

[0069] refer to Figure 9 As shown, in this embodiment, the correction platform 8 includes a correction table 81, a correction drive mechanism 82 driven and connected to the correction table 81, a correction ring light source 83 and a correction collector 84, the correction drive mechanism 82 is used to drive the correction table 81 to move along the X-axis and Y-axis, and make the correction table 81 rotate, the correction ring light source 83 is located between the correction table 81 and the correction collector 84, and the correction collector 84 corresponds to the correction ring light source 83; in actual application, the graphite disk 03 is supported by the correction table 81, the correction ring light source 83 is used to fill light for the graphite disk 03, and the correction collector 84 visually takes pictures to determine the position and angle of the graphite disk 03, the correction drive mechanism 82 drives the correction table 81 to move along the X-axis and / or Y-axis according to the data obtained by the correction collector 84, and makes the correction table 81 rotate, thereby adjusting the position and angle of the graphite disk 03, realizing the precise positioning of the graphite disk 03, and completing the edge finding of the graphite disk 03.

[0070] refer to Figure 10 As shown, in this embodiment, the correction drive mechanism 82 includes a correction X-axis module 821, a correction Y-axis module 822 driven and connected to the correction X-axis module 821, and a correction rotation unit 823 driven and connected to the correction Y-axis module 822. The correction X-axis module 821 and the correction Y-axis module 822 are linear motors, oil cylinders or electric cylinders. The correction X-axis module 821 drives the correction Y-axis module 822 to move along the X-axis, and the correction Y-axis module 822 drives the correction rotation unit 823 to move along the Y-axis. The correction rotation unit 823 is a servo motor or a drive motor. The correction rotation unit 823 is driven and connected to the correction table 81. The correction rotation unit 823 is used to drive the correction table 81 to rotate.

[0071] refer to Figure 11 As shown, in this embodiment, the ring bracket 22 is provided with a ring supporting opening 221. When the ring bracket 22 supports the graphite ring 02, the bottom outer edge of the graphite ring 02 extends into the ring supporting opening 221. The graphite ring 02 is supported by the ring supporting opening 221, which facilitates the positioning of the graphite ring 02.

[0072] refer to Figure 12 As shown, in this embodiment, the bottom end of the graphite ring 02 is provided with an annular disk accommodating groove 021. When the graphite disk 03 is combined with the graphite ring 02, the top outer edge of the graphite disk 03 extends into the disk accommodating groove 021, and part of the graphite disk 03 is hidden in the graphite ring 02. The structure is compact, space is saved, and it is conducive to the accurate positioning of the graphite disk 03 on the graphite ring 02; Figure 13 As shown, the top of the graphite ring 02 is provided with an annular sheet accommodating groove 022. When the wafer 01 and the graphite ring 02 are combined, the outer edge of the bottom end of the wafer 01 extends into the sheet accommodating groove 022, hiding part of the wafer 01 in the graphite ring 02. The structure is compact, space is saved, and it is conducive to the accurate positioning of the wafer 01 in the graphite ring 02.

[0073] The above description is only a preferred embodiment of the present invention and does not constitute any form of limitation to the present invention. Although the present invention is disclosed as a preferred embodiment as above, it is not intended to limit the present invention. Any technician familiar with the profession can make some changes or modifications to equivalent embodiments of the above-disclosed technical contents without departing from the scope of the technical solution of the present invention. However, any simple modifications, equivalent changes and modifications made to the above embodiments according to the technology of the present invention, which do not depart from the content of the technical solution of the present invention, are within the scope of the technical solution of the present invention.

Claims

1. A SiC epitaxial transmission system, characterized in that: It comprises a robot (1) for grabbing or placing a wafer (01), a graphite ring (02) or a graphite disk (03), a merging and splitting module (2) for realizing merging or splitting of the graphite ring (02) and the wafer (01) or the graphite disk (03), an artificial platform (3) and a reaction chamber (4); The artificial platform (3) is used to carry the combined wafer (01), graphite ring (02) and graphite disk (03); When the wafer (01), the graphite ring (02) and the graphite disk (03) are combined, the robot (1) grabs or places the graphite disk (03) to achieve the overall transfer of the wafer (01), the graphite ring (02) and the graphite disk (03); When the graphite ring (02) and the graphite disk (03) are combined, the manipulator (1) grabs or places the graphite disk (03) to achieve the overall transfer of the graphite ring (02) and the graphite disk (03); When it is necessary to merge the wafer (01), the graphite ring (02) and the graphite disk (03), the manipulator (1) grabs the merged graphite ring (02) and the graphite disk (03) and places them in the merging and splitting module (2). The merging and splitting module (2) splits the graphite ring (02) and the graphite disk (03). The manipulator (1) grabs the graphite disk (03) and separates it from the merging and splitting module (2), so that the merging and splitting module (2) supports the graphite ring (02). 2), the manipulator (1) grabs the wafer (01) and places it on the merging and splitting module (2), the merging and splitting module (2) merges the wafer (01) and the graphite ring (02), the manipulator (1) grabs the aforementioned detached graphite disk (03) to the merging and splitting module (2), the merging and splitting module (2) merges the graphite disk (03) and the graphite ring (02), thereby achieving the merging of the wafer (01), the graphite ring (02) and the graphite disk (03); When the merging and splitting module (2) is in normal use, the robot (1) takes out the merged wafer (01), the graphite ring (02), and the graphite disk (03), and places them into the reaction chamber (4). After epitaxial growth in the reaction chamber (4), the robot (1) takes out the merged wafer (01), the graphite ring (02), and the graphite disk (03) from the reaction chamber (4); When the merging and splitting module (2) fails, the merged wafer (01), graphite ring (02) and graphite disk (03) are manually placed on the artificial platform (3), the robot (1) takes the merged wafer (01), graphite ring (02) and graphite disk (03) at the artificial platform (3) and places them in the reaction chamber (4), after epitaxial growth in the reaction chamber (4), the robot (1) takes out the merged wafer (01), graphite ring (02) and graphite disk (03) from the reaction chamber (4) and places them on the artificial platform (3), manually takes away the merged wafer (01), graphite ring (02) and graphite disk (03) that have undergone epitaxial reaction at the artificial platform (3), and places the merged wafer (01), graphite ring (02) and graphite disk (03) that have not undergone epitaxial reaction at the artificial platform (3).

2. The SiC epitaxial transfer system according to claim 1, characterized in that: The merging and splitting module (2) comprises a base frame (21), a plurality of ring brackets (22) connected to the top of the base frame (21), a tray (23) and a lifting mechanism (24), wherein the ring brackets (22) are distributed around the base frame (21), the lifting mechanism (24) is drivingly connected to the tray (23), the base frame (21) is penetrated by a movable opening (211) at the top and bottom, the output end of the lifting mechanism (24) is penetrated by the movable opening (211), and the lifting mechanism (24) drives the tray (23) to move up and down, so that the tray (23) moves up and down inside the ring bracket (22); When the graphite ring (02) and the graphite disk (03) are separated, the lifting mechanism (24) drives the tray (23) to move upward to a desired height, the manipulator (1) places the merged graphite disk (03) and the graphite ring (02) into the merging and splitting module (2), and the ring bracket (22) and the tray (23) respectively support the graphite ring (02) and the graphite disk (03), and the lifting mechanism (24) drives the tray (23) to move downward, so that the graphite disk (03) moves downward synchronously with the tray (23) and is separated from the graphite ring (02); When the wafer (01) and the graphite ring (02) are combined, the lifting mechanism (24) drives the tray (23) to move upward to a required height, the robot (1) places the wafer (01) into the tray (23), and the lifting mechanism (24) descends to drive the wafer (01) to descend synchronously, so that the wafer (01) is supported by the graphite ring (02).

3. The SiC epitaxial transfer system according to claim 2, characterized in that: The merging and splitting module (2) further comprises a merging and splitting driving mechanism (25), a merging and splitting annular light source (26), a surface light source (27) and a collection device (28); the merging and splitting driving mechanism (25) is used to drive the base frame (21) to move along the X-axis and the Y-axis and to make the base frame (21) rotate; the merging and splitting annular light source (26) is located between the base frame (21) and the surface light source (27); and the front end of the collection device (28) passes through the surface light source (27) and corresponds to the merging and splitting annular light source (26); When the graphite ring (02) is edge-finding, the ring bracket (22) supports the graphite ring (02), the surface light source (27) and the detachable ring light source (26) provide supplementary light to the graphite ring (02) and the acquisition device (28), the acquisition device (28) visually photographs to determine the position and angle of the graphite ring (02), and the detachable driving mechanism (25) drives the base frame (21) to move along the X-axis and / or the Y-axis according to the data obtained by the acquisition device (28), and causes the base frame (21) to rotate, thereby adjusting the position and angle of the ring bracket (22) and the graphite ring (02), and realizing accurate positioning of the graphite ring (02).

4. The SiC epitaxial transfer system according to claim 3, characterized in that: The disassembly and assembly driving mechanism (25) comprises a disassembly and assembly X-axis module (251), a disassembly and assembly Y-axis module (252) drivingly connected to the disassembly and assembly X-axis module (251), and a disassembly and assembly rotation unit (253) drivingly connected to the disassembly and assembly Y-axis module (252). The disassembly and assembly X-axis module (251) drives the disassembly and assembly Y-axis module (252) to move along the X-axis, and the disassembly and assembly Y-axis module (252) drives the disassembly and assembly rotation unit (253) to move along the Y-axis. The disassembly and assembly rotation unit (253) is drivingly connected to the base frame (21). The disassembly and assembly rotation unit (253) is used to drive the base frame (21) to rotate. The disassembly and assembly rotation unit (253) is installed with a protective cover (2531). The protective cover (2531) is penetrated by an installation opening (2532) at the top and bottom. The lifting mechanism (24) is arranged through the installation opening (2532).

5. The SiC epitaxial transfer system according to claim 1, wherein: The SiC epitaxial transmission system further includes a loading box (5) for storing wafers (01), a disk-ring placement box (6) for storing the merged graphite rings (02) and graphite disks (03), an edge finder (7) for edge finding of the wafers (01), and a deviation correction platform (8) for edge finding of the graphite disks (03); When the wafer (01) is edge-finding, the manipulator (1) grabs the merged graphite disk (03) and graphite ring (02) from the disk-ring placement box (6) and loads them into the merging and splitting module (2); the merging and splitting module (2) separates the graphite disk (03) from the graphite ring (02); the manipulator (1) places the graphite disk (03) on the correction platform (8) for edge-finding, and performs edge-finding on the graphite ring (02) through the merging and splitting module (2); then, the manipulator (1) successively grabs the wafer (01) and the graphite disk (03) after edge-finding and loads them into the merging and splitting module (2), so that the wafer (01) and the graphite disk (03) are merged with the graphite ring (02) in sequence; the manipulator (1) transfers the merged wafer (01), the graphite ring (02) and the graphite disk (03) as a whole to the reaction chamber (4); After the wafer (01) undergoes epitaxial growth, the manipulator (1) places the merged wafer (01), graphite ring (02) and graphite disk (03) from the reaction chamber (4) into the merging and splitting module (2), the merging and splitting module (2) separates the graphite disk (03) from the graphite ring (02), the manipulator (1) places the graphite disk (03) on the deviation correction platform (8) for edge finding, the merging and splitting module (2) separates the wafer (01) from the graphite ring (02), the manipulator (1) takes the wafer (01) away and places it into a loading box (5), the manipulator (1) places the graphite disk (03) into the merging and splitting module (2), the merging and splitting module (2) merges the graphite disk (03) and the graphite ring (02), and the manipulator (1) places the merged graphite ring (02) and the graphite disk (03) as a whole into a disk and ring placement box (6).

6. The SiC epitaxial transfer system according to claim 5, characterized in that: The deflection correction platform (8) comprises a deflection correction platform (81), a deflection correction driving mechanism (82) connected to the deflection correction platform (81), a deflection correction annular light source (83) and a deflection correction collector (84), wherein the deflection correction driving mechanism (82) is used to drive the deflection correction platform (81) to move along the X-axis and the Y-axis and to make the deflection correction platform (81) rotate, and the deflection correction annular light source (83) is located between the deflection correction platform (81) and the deflection correction collector (84), and the deflection correction collector (84) corresponds to the deflection correction annular light source (83); When the graphite disk (03) is edge-finding, the deflection correction platform (81) supports the graphite disk (03), the deflection correction ring light source (83) provides supplementary light to the graphite disk (03), the deflection correction collector (84) visually photographs to determine the position and angle of the graphite disk (03), and the deflection correction driving mechanism (82) drives the deflection correction platform (81) to move along the X-axis and / or the Y-axis according to the data obtained by the deflection correction collector (84), and causes the deflection correction platform (81) to rotate, thereby adjusting the position and angle of the graphite disk (03) and realizing accurate positioning of the graphite disk (03).

7. The SiC epitaxial transfer system according to claim 6, characterized in that: The deflection correction driving mechanism (82) comprises a deflection correction X-axis module (821), a deflection correction Y-axis module (822) drivingly connected to the deflection correction X-axis module (821), and a deflection correction rotation unit (823) drivingly connected to the deflection correction Y-axis module (822); the deflection correction X-axis module (821) drives the deflection correction Y-axis module (822) to move along the X-axis; the deflection correction Y-axis module (822) drives the deflection correction rotation unit (823) to move along the Y-axis; the deflection correction rotation unit (823) is drivingly connected to the deflection correction platform (81); and the deflection correction rotation unit (823) is used to drive the deflection correction platform (81) to rotate.

8. The SiC epitaxial transfer system according to claim 2, wherein: The ring bracket (22) is provided with a ring supporting opening (221), and when the ring bracket (22) supports the graphite ring (02), the bottom outer edge of the graphite ring (02) extends into the ring supporting opening (221).

9. The SiC epitaxial transfer system according to claim 2, wherein: The bottom end of the graphite ring (02) is provided with an annular disk accommodating groove (021); when the graphite disk (03) and the graphite ring (02) are combined, the top outer edge of the graphite disk (03) extends into the disk accommodating groove (021); the top end of the graphite ring (02) is provided with an annular sheet accommodating groove (022); when the wafer (01) and the graphite ring (02) are combined, the bottom outer edge of the wafer (01) extends into the sheet accommodating groove (022).

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