Single crystal furnace doping device and single crystal furnace
Patent Information
- Application Number
- CN202422763255.5
- Authority / Receiving Office
- CN · China
- Patent Type
- Utility models(China)
- Current Assignee / Owner
- Filing Date
- 2024-11-12
- Publication Date
- 2025-09-12
- Estimated Expiration
- 2034-11-12
Smart Images
Figure CN223329424U_ABST
Abstract
Description
Technical Field
[0001] The utility model relates to the technical field of doping in a single crystal furnace crystal pulling process, in particular to a single crystal furnace doping device and a single crystal furnace. Background Art
[0002] In existing technologies, doping is a key process for precisely controlling a semiconductor's conductivity type (e.g., converting an intrinsic semiconductor into an n-type or p-type semiconductor), carrier concentration, mobility, and other electrical properties to meet the manufacturing requirements of various semiconductor devices (e.g., transistors and diodes). Commonly used impurity elements for n-type doping include phosphorus (P), arsenic (As), and antimony (SB). These elements have five valence electrons. When incorporated into tetravalent semiconductor materials such as silicon or germanium, they create an additional electron that becomes a freely mobile carrier, thereby increasing the material's conductivity.
[0003] In the prior art, the doping process usually needs to be carried out under specific conditions to ensure that the impurity elements can be evenly distributed throughout the semiconductor material. For example, the melting point of antimony (SB) is 630.5°C and the vaporization temperature is 1635°C. Under high temperature conditions, antimony will change from solid to liquid, and when the temperature reaches 1635°C, it will further change to gas. Other commonly used impurity elements, such as phosphorus (P) and arsenic (As), also have similar physical properties. They are easily vaporized during the doping process, resulting in volatilization, making it difficult to accurately control the doping dose.
[0004] In the existing doping process, impurities are directly introduced into the silicon liquid via an external dosing device. However, these impurities easily vaporize at high temperatures and evaporate into the air, causing doping losses. They are difficult to mix with the silicon liquid, making it difficult to accurately determine doping dosage, which in turn affects the performance of the final semiconductor device. Therefore, effectively controlling the introduction of these impurities has become a critical issue in semiconductor manufacturing. Utility Model Content
[0005] The purpose of the utility model is to provide a single crystal furnace doping device, which can reduce the vaporization speed of the doping material and make it less likely to volatilize into the air, can be mixed more fully with the silicon liquid, can more accurately determine the doping dosage, and control the electrical properties of the product.
[0006] Another object of the present invention is to provide a single crystal furnace, which can reduce the vaporization rate of the doping material through a doping device and make it less likely to evaporate into the air, can be mixed more fully with the silicon liquid, can more accurately determine the doping dosage, and control the electrical properties of the product.
[0007] The technical solution of the present utility model is achieved as follows:
[0008] A single crystal furnace doping device, comprising:
[0009] A doping container is used to place doping substances, and a mounting opening is provided at the bottom of the doping container;
[0010] a feeding pipe, the feeding pipe being installed at the installation port, the two ends of the feeding pipe being respectively a first end and a second end, the first end leading to the inside of the doping container, and the second end leading to the outside of the doping container;
[0011] A connecting portion, wherein the doping container is provided with a connecting portion;
[0012] A splash protection cover is provided at the bottom of the doping container and is provided outside the second end;
[0013] Wherein, a liquid leakage port is provided at the bottom of the doping container and / or the side of the first end.
[0014] Furthermore, the leakage opening is in the shape of a slit or a hole.
[0015] Furthermore, the doping container is cylindrical, and the bottom of the doping container is an opening, and the opening is the installation port.
[0016] Furthermore, the feeding pipe is trumpet-shaped, and the diameter of the feeding pipe gradually decreases from bottom to top.
[0017] Furthermore, the lower edge of the feeding tube is sealed and connected correspondingly to the lower edge of the doping container.
[0018] Furthermore, a plurality of leakage openings are provided on the feeding pipe, and the leakage openings are in the shape of slits to form leakage gaps.
[0019] Furthermore, a plurality of the leakage gaps are evenly arranged around the central axis of the feeding pipe.
[0020] Furthermore, the doping material is antimony.
[0021] Furthermore, the connecting portion is provided with a through hole.
[0022] A single crystal furnace comprises the single crystal furnace doping device.
[0023] Compared with the prior art, the beneficial effects of the present invention are:
[0024] Before doping, the present application can feed a certain amount of doping material or doping substance (such as solid antimony) into the doping container through the second end of the feeding tube, and then hoist the doping device as a whole onto the single crystal furnace hammer through the connection part, and then lift it into the sub-chamber to purify the sub-chamber, and then drive the single crystal furnace hammer down, so that the lower edge of the splash protection cover stops descending at a position 10 mm away from the silicon liquid surface, and the doping particles are liquefied by the liquid temperature. The liquefied doping substance flows into the crucible through the leakage port and is fully mixed and fused with the silicon liquid, so that the doping substance and the silicon liquid can fully react. Therefore, the solid doping substance passing through the device will not directly contact the high-temperature silicon liquid, but will flow into the silicon liquid after liquefaction. There will be no direct gas volatilization during the doping process, and it can be mixed more fully with the silicon liquid, and the doping dosage can be determined more accurately or even very accurately to control the electrical properties of the product.
[0025] In addition, in the doping process of the prior art, impurities are directly added to the silicon liquid through an external doping device, which can easily cause the "silicon splashing" phenomenon. However, the present application places the doping material in the doping container in advance, and the splash-proof protective cover is designed to avoid the splashing of silicon liquid and solve the "silicon splashing" problem. BRIEF DESCRIPTION OF THE DRAWINGS
[0026] In order to more clearly illustrate the technical solutions of the embodiments of the present invention, the following is a brief introduction to the drawings required for use in the embodiments. It should be understood that the following drawings only illustrate certain embodiments of the present invention and therefore should not be regarded as limiting the scope. For ordinary technicians in this field, other relevant drawings can be obtained based on these drawings without paying any creative work.
[0027] Figure 1 This is a structural schematic diagram of the single crystal furnace doping device of the utility model.
[0028] In the picture:
[0029] 1-connecting part; 101-perforation; 2-doping container; 3-feeding pipe;
[0030] 4- Leakage gap; 5- Splash protection cover. DETAILED DESCRIPTION
[0031] To make the purpose, technical solutions, and advantages of the embodiments of the present invention more clear, the technical solutions in the embodiments of the present invention will be clearly and completely described below in conjunction with the accompanying drawings of the embodiments of the present invention. Obviously, the described embodiments are only some embodiments of the present invention, not all embodiments. Generally, the components of the embodiments of the present invention described and shown in the drawings herein can be arranged and designed in various different configurations.
[0032] Therefore, the following detailed description of the embodiments of the present invention provided in the accompanying drawings is not intended to limit the scope of the claimed invention, but rather merely represents selected embodiments of the present invention. All other embodiments derived by persons of ordinary skill in the art based on the embodiments of the present invention without creative effort are also within the scope of protection of the present invention.
[0033] It should be noted that similar reference numerals and letters denote similar items in the following drawings, and therefore, once an item is defined in one drawing, it does not need to be further defined or explained in subsequent drawings.
[0034] In the description of this utility model, it should be noted that the terms "center," "upper," "lower," "left," "right," "vertical," "horizontal," "inner," and "outer" and the like, indicating orientations or positional relationships, are based on the orientations or positional relationships shown in the accompanying drawings, or are the orientations or positional relationships in which the utility model product is typically placed when in use. These terms are intended solely to facilitate the description of this utility model and to simplify the description, and are not intended to indicate or imply that the device or component referred to must have a specific orientation, be constructed, or operate in a specific orientation. Therefore, they should not be construed as limitations on this utility model. Furthermore, the terms "first," "second," and "third," etc., are used solely to distinguish descriptions and should not be construed as indicating or implying relative importance.
[0035] Furthermore, terms such as "horizontal," "vertical," and "overhanging" do not necessarily imply that a component must be absolutely horizontal or overhanging, but rather that it can be slightly tilted. For example, "horizontal" simply means that its direction is more horizontal than "vertical," and does not mean that the structure must be completely horizontal, but rather that it can be slightly tilted.
[0036] It should also be noted that, in the description of this utility model, unless otherwise expressly specified or limited, the terms "disposed," "installed," "connected," and "connected" should be understood in a broad sense. For example, they can refer to fixed connections, detachable connections, or integral connections; mechanical connections, electrical connections; direct connections, indirect connections through an intermediate medium, and internal connections between two components. Those skilled in the art will understand the specific meanings of the above terms in this utility model based on the specific circumstances.
[0037] The following embodiments of the present invention are described in detail with reference to the accompanying drawings. In the absence of conflict, the following embodiments and features in the embodiments may be combined with each other.
[0038] Example 1
[0039] Reference Figure 1 This embodiment provides a single crystal furnace doping device, comprising:
[0040] The doping container 2 is used to place doping materials inside. For example, in the case of n-type doping, the doping materials are phosphorus, arsenic or antimony. Preferably, the doping material is solid antimony.
[0041] a feeding pipe 3, wherein the two ends of the feeding pipe 3 are respectively a first end and a second end, the first end leads to the inside of the doping container 2, and the second end leads to the outside of the doping container 2;
[0042] Connecting part 1, the doping container 2 is provided with a connecting part 1, the connecting part 1 is used to install the doping device as a whole on the single crystal furnace weight and establish a connection with the single crystal furnace weight;
[0043] The splash protection cover 5 is provided at the bottom of the doping container 2, and the splash protection cover 5 is provided outside the second end;
[0044] The bottom of the doping container 2 and / or the side of the first end are provided with a liquid leakage opening in the form of a slit or hole (a small pore structure). Since the doped substance, after being liquefied by heat, flows out of the second end into the silicon liquid through the liquid leakage opening, the splash shield 5 serves to prevent splashing.
[0045] It should be noted that the "weight" in the single crystal furnace does not refer to a "hammer" in the actual sense, but a mechanical component, which is mainly used to suspend and fix certain devices. Therefore, in this embodiment, the "weight" of the single crystal furnace is used to suspend and lift the doping device. Specifically, in this embodiment, the weight is used to ensure the positioning and stability of the doping device in the sub-chamber, as well as to perform lifting and lowering operations between different processes. In actual operation, the weight can be connected to the doping tooling through a rope, hook, chain or other mechanical transmission device. It is only necessary to hang the doping device as a whole, so that the tooling can be lifted to the appropriate position when the sub-chamber is purified, and then lowered into the silicon liquid during doping, so as to ensure the safety and accuracy of the doping process.
[0046] Simply put, the weight plays the role of suspension and lifting in the single crystal furnace to ensure that the doping device can be accurately moved to the required position, thereby ensuring the effective implementation of the doping process.
[0047] In this embodiment, the feeding tube 3 is installed in the mounting hole, and the feeding tube 3 and the through-hole 101 are sealed or sealed. The port of the first end of the feeding tube 3 is located in the upper middle part of the doping container 2 (i.e., the middle part or above the middle part), so that the doping material can be limited to prevent it from leaking; the feeding tube 3 is a straight tube and has a central axis.
[0048] Preferably, the doping container 2 is cylindrical, and the bottom of the doping container 2 is an opening, which is the installation port. Correspondingly, the feeding tube 3 is trumpet-shaped, and the diameter of the feeding tube 3 gradually decreases from bottom to top, and the lower edge of the feeding tube 3 is sealed and connected correspondingly to the lower edge of the doping container 2 (that is, the inner wall of the installation port).
[0049] In this embodiment, the connecting part 1 is arranged on the top of the doping container 2, and a through-hole 101 is opened on the connecting part 1 for hanging on the heavy hammer of the single crystal furnace. For example, a tip of a hook, a rope, etc. can be placed in the through-hole 101 to suspend or hang the doping device as a whole on the heavy hammer of the single crystal furnace.
[0050] In this embodiment, since the feeding tube 3 is trumpet-shaped, the second end is a flared structure, which facilitates feeding the doping material into the doping container 2 through the second end. The doping material can be granular phosphorus, arsenic or antimony.
[0051] Preferably, the doping device is entirely made of quartz material.
[0052] In this embodiment, a plurality of leakage openings are provided on the feeding pipe 3, and the leakage openings are slit-shaped to form leakage gaps 4. The plurality of leakage gaps 4 are evenly arranged around the central axis of the feeding pipe 3. Figure 1 shown.
[0053] A method of using the doping device is as follows:
[0054] 1. Turn the entire doping device upside down so that the second end of the feeding tube 3 faces upward, and add the solid doping material antimony from the second end of the feeding tube 3 and into the doping container 2 through the feeding tube 3;
[0055] 2. After the doping particles are placed into the doping container 2, the doping device is flipped horizontally 180 degrees to be in an upright position;
[0056] 3. Hang the doping device as a whole on a weight through the connection part 1 (the weight can be connected by a hook, chain, rope, etc. passing through the through hole 101 of the connection part 1), and then lift it into the auxiliary chamber together for purification;
[0057] 4. Lower the weight and the doping device as a whole, so that the lower edge of the splash shield 5 stops descending at a position 10 mm away from the silicon liquid surface. The doping particles are liquefied by the liquid temperature. The liquefied doping material flows into the crucible through the multiple leakage gaps 4 on the feeding pipe 3 and is fully mixed and fused with the silicon liquid.
[0058] 5. Observe the solid doping material in the doping container 2. After it is completely liquefied and flows into the silicon liquid, lift the doping device into the sub-chamber to complete the doping.
[0059] Through this device, the solid doping material will not come into direct contact with the high-temperature silicon liquid, but will flow into the silicon liquid after being liquefied. There will be no direct gas volatilization during the doping process, and it can be mixed with the silicon liquid more fully, and the doping dosage can be determined more accurately or even very accurately, so as to control the electrical properties of the product and improve the product quality. In addition, in the doping process of the prior art, impurities (doping materials) are directly thrown into the silicon liquid through an external feeding device. Under the action of the impact force, it is easy to cause the "silicon splashing" phenomenon. However, in the present application, the doping material is placed in the doping container 2 in advance, and the doping material is slowly liquefied by the liquid temperature of the silicon liquid and then flows into the silicon liquid, so there will be no "silicon splashing". In addition, due to the design of the splash-proof protective cover 5, when the liquefied doping material escapes, the splash-proof protective cover 5 can further prevent the silicon liquid from splashing, thereby solving the "silicon splashing" problem.
[0060] Example 2
[0061] A single crystal furnace comprises the single crystal furnace doping device.
[0062] After a set amount of doping material is added to the doping container 2, the doping device is hung on the weight of the single crystal furnace through the connection part 1, and then lifted into the auxiliary chamber for purification of the auxiliary chamber;
[0063] Lower the weight and the doping device as a whole, so that the lower edge of the splash protection cover 5 stops descending at a position 10 mm away from the silicon liquid surface, and the doping material is liquefied by the liquid temperature. The liquefied doping material flows into the crucible through the multiple leakage gaps 4 on the feeding pipe 3 and is fully mixed and fused with the silicon liquid;
[0064] Observe the solid doping material in the doping container 2. After it is completely liquefied, lift the doping device into the auxiliary chamber to complete the doping.
[0065] Through this doping device, different doping methods can be selected according to the physical properties of different impurities during the crystal pulling process in the single crystal furnace, so that impurities can be introduced into the reaction system to achieve the final target electrical performance, thereby improving product quality. It can not only reduce the vaporization rate of the doping substance and make it less likely to evaporate into the air, but also fully mix and react with the silicon liquid, accurately determine the doping dosage, control the electrical performance of the product, and avoid the "silicon splashing" phenomenon.
[0066] The beneficial effects of the technical solution of the utility model are:
[0067] Existing doping technology uses an external device to directly inject impurities into the silicon liquid. This process is prone to high-temperature direct gas volatilization (silicon melting point is 1410°C), and the liquid temperature during the doping process is usually much higher than 1410°C. This makes it impossible to accurately calculate the doping effect and control the product's electrical performance. It is also prone to risks such as silicon splashing. Doping particles are directly injected into the silicon liquid through an isolation valve, which is prone to silicon splashing and causing disconnection during the crystal pulling process.
[0068] The technical solution of this application can effectively avoid the above problems, accurately calculate the doping dosage, and control the electrical performance of the product.
[0069] Finally, it should be noted that the above embodiments are only used to illustrate the technical solutions of the present invention, rather than to limit it. Although the present invention has been described in detail with reference to the above embodiments, those skilled in the art should understand that they can still modify the technical solutions described in the above embodiments, or replace some or all of the technical features therein with equivalents. However, these modifications or replacements do not deviate the essence of the corresponding technical solutions from the scope of the technical solutions of the embodiments of the present invention.
[0070] The above description is merely a preferred embodiment of the present invention and is not intended to limit the present invention. Those skilled in the art will readily appreciate that the present invention is susceptible to various modifications and variations. Any modifications, equivalent substitutions, or improvements made within the spirit and principles of the present invention shall be included within the scope of protection of the present invention.
Claims
1. A single crystal furnace doping device, characterized in that: include: A doping container (2) is used to place a doping substance therein, and a mounting opening is provided at the bottom of the doping container (2); a feeding pipe (3), the feeding pipe (3) being installed at the installation port, the two ends of the feeding pipe (3) being respectively a first end and a second end, the first end leading to the inside of the doping container (2), and the second end leading to the outside of the doping container (2); A connecting portion (1), wherein the doping container (2) is provided with the connecting portion (1); A splash protection cover (5), the splash protection cover (5) is provided at the bottom of the doping container (2), and the splash protection cover (5) is provided outside the second end; Wherein, a liquid leakage port is provided at the bottom of the doping container (2) and / or the side of the first end.
2. The single crystal furnace doping device according to claim 1, characterized in that: The liquid leakage port is in the shape of a slit or a hole.
3. The single crystal furnace doping device according to claim 1, characterized in that: The doping container (2) is cylindrical, and the bottom of the doping container (2) is an opening, and the opening is the installation port.
4. The single crystal furnace doping device according to claim 1, characterized in that: The feeding pipe (3) is trumpet-shaped, and the diameter of the feeding pipe (3) gradually decreases from bottom to top.
5. The single crystal furnace doping device according to claim 2, characterized in that: The lower edge of the feeding pipe (3) is correspondingly sealed and connected to the lower edge of the doping container (2).
6. The single crystal furnace doping device according to claim 5, characterized in that: The feeding pipe (3) is provided with a plurality of leakage openings, and the leakage openings are in the shape of slits to form leakage gaps (4).
7. The single crystal furnace doping device according to claim 6, characterized in that: A plurality of liquid leakage gaps (4) are evenly arranged around the central axis of the feeding pipe (3).
8. The single crystal furnace doping device according to claim 1, characterized in that: The doping material is antimony.
9. The single crystal furnace doping device according to claim 1, characterized in that: The connecting portion (1) is provided with a through hole (101).
10. A single crystal furnace, characterized in that: The single crystal furnace doping device comprises the single crystal furnace doping device according to any one of claims 1 to 9.