Semiconductor transmission device

Abstract

The utility model provides a semiconductor transmission device. The semiconductor transmission device comprises a cavity structure, a front-end transmission module and a mechanical arm, the chamber structure is provided with a buffer chamber, a transmission chamber and a main chamber which are communicated with one another, and the buffer chamber is used for receiving wafers transmitted from the front-end transmission module. The mechanical arm is arranged in the transmission chamber and is used for transmitting wafers between the buffer chamber and the main chamber. Since each of the buffer chamber, the transmission chamber and the main chamber is not an independent chamber, but is three mutually communicated functional chambers integrated on the same chamber structure, the integrated design of integrating the buffer chamber, the transmission chamber and the main chamber on the chamber structure enables the semiconductor transmission device to be high in integration level and high in reliability. On the premise of ensuring that the buffer chamber, the transmission chamber and the main chamber have the functions of the existing chamber, the space occupancy rate of the semiconductor transmission device can be improved, and the material cost and the manufacturing cost can be reduced.

Description

Technical Field

[0001] The utility model relates to the technical field of semiconductor manufacturing, in particular to a semiconductor transmission device. Background Art

[0002] Semiconductor equipment is complex, bulky, and highly integrated, consisting of a wide variety of components. Advances in semiconductor manufacturing processes have placed increasingly stringent specifications on semiconductor equipment. Consequently, semiconductor components face higher standards in terms of materials, structure, process, quality, precision, reliability, and stability, differing from traditional mechanical components. For example, electron beam inspection equipment consists of a vacuum module (including various pumps and valves) installed in the vacuum chamber to create the vacuum environment in the reaction chamber, as well as various instruments and meters for monitoring reaction conditions such as pressure and vacuum level. Together, these form a highly integrated electron beam inspection system.

[0003] Electron beam inspection equipment typically consists of an EFEM (front-end transfer equipment), a buffer chamber, and a main vacuum chamber. Both the buffer and main vacuum chambers are precision machined components, typically designed by engineers at individual semiconductor companies. The existing buffer chamber design is a separate chamber connected to the independently designed main vacuum chamber via a transfer valve. This split chamber structure occupies a large space and has high material and manufacturing costs. Furthermore, because the buffer chamber is typically located directly in front of the robot transfer chamber of the main vacuum chamber, it increases the overall length of the equipment, impacting its footprint.

[0004] In view of this, the present utility model is proposed. Utility Model Content

[0005] The utility model provides a semiconductor transmission device to solve the technical problems of existing semiconductor transmission devices that occupy a large space and have a high cost.

[0006] A first aspect of the present invention provides a semiconductor transfer device comprising a chamber structure, a front-end transfer module, and a robotic arm. The chamber structure comprises a buffer chamber, a transfer chamber, and a main chamber, which are interconnected. The buffer chamber is configured to receive wafers transferred from the front-end transfer module. The robotic arm is disposed within the transfer chamber and is configured to transfer wafers between the buffer chamber and the main chamber, enabling the wafers to be inspected while being moved into the main chamber and removed from the main chamber after inspection.

[0007] In a further embodiment of the present invention, the buffer chamber and the transfer chamber are located on one side of the main chamber in a first horizontal direction of the chamber structure, and the buffer chamber and the transfer chamber are arranged side by side in a second horizontal direction of the chamber structure.

[0008] In a further solution of the present invention, the chamber structure is integrally formed into a buffer chamber, a transmission chamber and a main chamber that are interconnected through an injection molding process.

[0009] In a further embodiment of the present invention, the buffer chamber includes a first chamber and a second chamber arranged in sequence along the height direction of the chamber structure, wherein the first chamber is configured to receive wafers transferred from the front-end transfer module. The semiconductor transfer apparatus further includes a first vacuum pump disposed in the second chamber and configured to evacuate the first chamber.

[0010] In a further embodiment of the present invention, the depth of the first chamber in the height direction is smaller than the depth of the transmission chamber in the height direction, and the depth of the second chamber in the height direction is larger than the depth of the transmission chamber in the height direction.

[0011] In a further embodiment of the present invention, a transfer port is provided on the cavity wall between the first chamber and the transfer chamber, and the semiconductor transfer device further comprises a transfer valve, which is used to seal or release the seal of the transfer port.

[0012] In a further embodiment of the present invention, the inner wall of the transmission chamber has a planar segment and an arc segment connected to each other, and at least a portion of the transmission port is arranged on the arc segment, which is used to provide guidance for the movement of the robotic arm in the transmission chamber, so that the robotic arm moves along the arc segment toward or away from the transmission port.

[0013] In a further embodiment of the present invention, the chamber structure further defines a mounting cavity communicating with the transfer port. The transfer valve comprises a sealing plate, a connecting portion, and a driving portion, which are sequentially connected. The driving portion is located in the mounting cavity and is configured to drive the connecting portion to move vertically, thereby enabling the sealing plate to extend into or out of the transfer port, thereby sealing or releasing the seal of the transfer port.

[0014] In a further embodiment of the present invention, the semiconductor transfer device also includes: a second vacuum pump, which is arranged outside the chamber structure and is used to vacuum the main chamber; a support frame, which is located outside the chamber structure and supports the chamber structure in the height direction, and the second vacuum pump is arranged on the support frame.

[0015] In a further solution of the present invention, a through hole is provided on the bottom wall of the transmission chamber, and the semiconductor transmission device further includes a support platform, which is provided on the support frame and passes through the through hole and the robotic arm.

[0016] In summary, the semiconductor transmission device provided by the present invention has at least the following beneficial effects:

[0017] In the present application, each of the buffer chamber, transfer chamber and main chamber is not an independent chamber, but three interconnected functional chambers integrated on the same chamber structure. This integrated design of integrating the buffer chamber, transfer chamber and main chamber on the chamber structure makes the semiconductor transmission device of the present application highly integrated. While ensuring that the buffer chamber, transfer chamber and main chamber have the existing chamber functions, it can improve the space occupancy rate of the semiconductor transmission device and reduce material costs and manufacturing costs. BRIEF DESCRIPTION OF THE DRAWINGS

[0018] In order to more clearly illustrate the specific embodiments of the present invention or the technical solutions in the prior art, the following briefly introduces the drawings required for the specific embodiments or the description of the prior art. Obviously, the drawings described below are some embodiments of the present invention. For those skilled in the art, other drawings can be derived from these drawings without inventive effort.

[0019] Figure 1 A schematic diagram showing the positional relationship of components of a semiconductor transmission device provided by one embodiment of the present invention;

[0020] Figure 2 A schematic diagram of the three-dimensional structure of a chamber structure provided in one embodiment of the present utility model;

[0021] Figure 3 A schematic diagram of the internal structure of a semiconductor transmission device provided by an embodiment of the present utility model;

[0022] Figure 4 A schematic structural diagram of a transfer valve provided in one embodiment of the present utility model;

[0023] Figure 5 A schematic diagram of the three-dimensional structure of a semiconductor transmission device provided in one embodiment of the present utility model;

[0024] Figure 6 A schematic diagram of the bottom structure of a chamber structure provided in one embodiment of the present utility model.

[0025] The accompanying drawings are numerals as follows:

[0026] 100. Chamber structure;

[0027] 10. Buffer chamber; 11. First chamber; 12. Second chamber; 20. Transmission chamber; 21. Plane section; 22. Arc section; 30. Main chamber; A. Transmission port; B. Mounting chamber; C. Through hole;

[0028] 200, front-end transmission module;

[0029] 300, robotic arm;

[0030] 400, first vacuum pump;

[0031] 500, transfer valve; 510, sealing plate; 520, connecting part; 530, driving part;

[0032] 600, second vacuum pump;

[0033] 700, support frame; 710, support body; 720, support column;

[0034] 800, support platform;

[0035] 900, vibration isolator;

[0036] 1000. Control cabinet;

[0037] L, first horizontal direction; W, second horizontal direction; H, height direction. DETAILED DESCRIPTION

[0038] In the description of the present invention, it should be understood that if terms such as "center", "longitudinal", "lateral", "length", "width", "thickness", "up", "down", "front", "back", "left", "right", "vertical", "horizontal", "top", "bottom", "inside", "outside", "clockwise", "counterclockwise", "axial", "radial", "circumferential" and the like appear to indicate the orientation or position relationship, unless otherwise specified, they are understood to be based on the orientation or position relationship shown in the accompanying drawings, which is only for the convenience of describing the present invention and simplifying the description, and does not indicate or imply that the device or element referred to must have a specific orientation, be constructed and operated in a specific orientation, and therefore cannot be understood as limiting the present invention.

[0039] Furthermore, the use of "first" or "second" in describing features is for descriptive purposes only and should not be construed as indicating or implying relative importance or implicitly specifying the number of technical features identified. Features identified as "first" or "second" may explicitly or implicitly include at least one of the identified features. The use of the word "plurality" generally implies at least two, such as two or three, unless otherwise specifically defined.

[0040] In this utility model, unless otherwise specified or limited, terms such as "installed," "connected," "connected," and "fixed" should be interpreted broadly. For example, they can refer to fixed connections, removable connections, or integration; mechanical connections, electrical connections, direct connections, or indirect connections through an intermediary; and internal communication between two components or interaction between two components. Those skilled in the art will understand the specific meanings of these terms in this utility model based on the specific circumstances.

[0041] In the description of this specification, if the terms "one embodiment", "some embodiments", "example", "specific example", or "some examples" appear, it means that the specific features, structures, materials or characteristics described in conjunction with the embodiment or example are included in at least one embodiment or example of the present invention. In this specification, the schematic expressions of the above terms do not necessarily refer to the same embodiment or example. Moreover, the specific features, structures, materials or characteristics described can be combined in any one or more embodiments or examples in a suitable manner. In addition, those skilled in the art can combine and combine different embodiments or examples described in this specification and the features of different embodiments or examples without contradiction.

[0042] Figure 1 This is a schematic diagram of the positional relationship of components of a semiconductor transmission device provided by an embodiment of the present invention. Figure 2 This is a schematic diagram of the three-dimensional structure of the chamber structure provided in one embodiment of the present utility model.

[0043] Please refer to Figure 1 and Figure 2 The semiconductor transmission device provided by the embodiment of the present invention includes a chamber structure 100, a front-end transmission module 200 and a robotic arm 300.

[0044] The chamber structure 100 is formed with a buffer chamber 10 , a transfer chamber 20 and a main chamber 30 that are interconnected, that is, the three chambers are interconnected in pairs.

[0045] The buffer chamber 10 is disposed adjacent to the front-end transfer module 200 and is configured to receive wafers transferred from the front-end transfer module 200. For example, a robot (which may be referred to as an atmospheric robot) in the front-end transfer module 200 may be used to transfer wafers from the front-end transfer module 200 to the buffer chamber 10. Furthermore, at least a portion of the buffer chamber 10 is configured to be switchable from an atmospheric state to a vacuum state, or vice versa, to provide a vacuum environment for the wafers before they are transferred to the main chamber 30.

[0046] The transfer chamber 20 is connected to the buffer chamber 10 and the main chamber 30 and is used to set up a robot arm 300 (which can be called a vacuum robot). The robot arm 300 can extend into and out of the buffer chamber 10 and the main chamber 30 to transfer wafers between the buffer chamber 10 and the main chamber 30 under a vacuum state.

[0047] The main chamber 30 is connected to the transfer chamber 20 and the buffer chamber 10 and is designed to meet the process requirements of electron beam inspection. When a wafer is transferred to the main chamber 30, the wafer inspection process can be carried out. After the wafer inspection is completed, the robot arm 300 can be moved out of the main chamber 30 to receive the next wafer to be inspected. In addition, the vacuum level of the first chamber 11, the transfer chamber 20, and the main chamber 30 can be determined according to the specific wafer inspection process requirements.

[0048] In the present application, each of the buffer chamber 10, the transfer chamber 20 and the main chamber 30 is not an independent chamber, but three interconnected functional chambers integrated on the same chamber structure 100. This integrated design of integrating the buffer chamber 10, the transfer chamber 20 and the main chamber 30 on the chamber structure 100 makes the semiconductor transmission device of the present application highly integrated. While ensuring that the buffer chamber 10, the transfer chamber 20 and the main chamber 30 have the existing chamber functions, it can improve the space occupancy rate of the semiconductor transmission device and reduce material costs and manufacturing costs.

[0049] Please refer to Figure 2 The buffer chamber 10 and the transfer chamber 20 are located on one side of the main chamber 30 in the first horizontal direction L of the chamber structure 100 , and the buffer chamber 10 and the transfer chamber 20 are arranged side by side in the second horizontal direction W of the chamber structure 100 .

[0050] It can be understood that the first horizontal direction L can be the length direction of the chamber structure 100, and the second horizontal direction W can be the width direction of the chamber structure 100; or, the first horizontal direction L can be the width direction of the chamber structure 100, and the second horizontal direction W can be the length direction of the chamber structure 100. In addition, both the first horizontal direction L and the second horizontal direction W are perpendicular to the height direction H of the chamber structure 100.

[0051] In the existing wafer transmission device, since the transmission chamber is usually located directly in front of the main chamber and the buffer chamber is located directly in front of the transmission chamber, that is, the buffer chamber, the transmission chamber, and the main chamber are arranged in sequence in the length direction of the wafer transmission device, the overall length space of the transmission device is increased, thereby affecting the floor area of ​​the transmission device.

[0052] In the present application, the buffer chamber 10, the transfer chamber 20 and the main chamber 30 are integrated on the chamber structure 100, and the buffer chamber 10 and the transfer chamber 20 are arranged side by side in the second horizontal direction W of the chamber structure 100, and the buffer chamber 10 and the transfer chamber 20 are arranged on one side of the main chamber 30 in the first horizontal direction L of the chamber structure 100. This optimizes the spatial layout between the buffer chamber 10, the transfer chamber 20 and the main chamber 30. Compared with the existing arrangement, the overall length space occupied by the chamber structure 100 is greatly reduced, thereby improving the space occupancy rate of the semiconductor transfer device of the present application and reducing material costs and manufacturing costs.

[0053] Specifically, the chamber structure 100 may be integrally formed into the buffer chamber 10 , the transmission chamber 20 , and the main chamber 30 that are interconnected through an injection molding process.

[0054] The injection molding process refers to the process of making semi-finished products of a certain shape by pressurizing, injecting, cooling, and separating molten raw materials. The process is relatively mature and the process flow is simple, and it can quickly form a high-quality multi-chamber structure. Therefore, the chamber structure 100 with a buffer chamber 10, a transmission chamber 20 and a main chamber 30 formed in one piece by the injection molding process in this application has high chamber quality, high manufacturing efficiency, and low material consumption, which can improve the manufacturing efficiency of semiconductor transmission devices and reduce manufacturing costs.

[0055] Continue to refer to Figure 2 The inner wall of the transmission chamber 20 has a planar segment 21 and an arc segment 22 connected to each other, and at least a portion of the transmission port A is arranged on the arc segment 22, which is used to provide guidance for the movement of the robot arm 300 in the transmission chamber 20, so that the robot arm 300 moves toward or away from the transmission port A along the arc segment 22.

[0056] When transferring wafers, based on the arc surface setting of the inner wall of the transfer chamber 20, the robotic arm 300 in the transfer chamber 20 can move along the bending direction of the arc surface segment 22 to extend into or out of the transfer port A, thereby realizing wafer transfer between the first chamber 11 and the transfer chamber 20.

[0057] Figure 3 This is a schematic diagram of the internal structure of a semiconductor transmission device provided by an embodiment of the present invention. Figure 4 This is a schematic structural diagram of a transmission valve provided in one embodiment of the present utility model.

[0058] Please refer to Figure 3The buffer chamber 10 includes a first chamber 11 and a second chamber 12 arranged sequentially in the height direction H of the chamber structure 100. The first chamber 11 is used to receive wafers transferred from the front-end transfer module 200. The first chamber 11 is configured to be able to switch from an atmospheric state to a vacuum state, or vice versa, to provide a vacuum environment for the wafers before they are transferred to the main chamber 30. The second chamber 12 is used to accommodate a device or equipment for vacuuming the first chamber 11.

[0059] Furthermore, the semiconductor transfer device further includes a first vacuum pump 400 , which is disposed in the second chamber 12 and is used to perform a vacuum process on the first chamber 11 .

[0060] It should be noted that when the first vacuum pump 400 is installed in the second chamber 12, the first chamber 11 is not actually connected to the second chamber 12, but is connected to the first vacuum pump 400 in the second chamber 12. As a result, the first chamber 11 can be switched from an atmospheric state to a vacuum state under the pumping action of the first vacuum pump 400. Furthermore, the first chamber 11 can be controlled to communicate with the external atmosphere. When the first vacuum pump 400 is stopped, the first chamber 11 can be switched to communicate with the external atmosphere, thereby enabling the first chamber 11 to switch from a vacuum state to an atmospheric state.

[0061] Continue to refer Figure 3 The depth of the first chamber 11 in the height direction H is smaller than the depth of the transfer chamber 20 in the height direction H, and the depth of the second chamber 12 in the height direction H is greater than the depth of the transfer chamber 20 in the height direction H.

[0062] Since the transfer chamber 20 requires both the robotic arm 300 and wafers, while the first chamber 11 only needs to receive wafers transferred from the front-end transfer module 200, the first chamber 11 itself does not need to be overly spacious. Therefore, the depth of the first chamber 11 in the height direction H can be smaller than the depth of the transfer chamber 20 in the height direction H. The second chamber 12 primarily houses vacuum equipment such as the first vacuum pump 400. Vacuum equipment is typically large, so the depth of the second chamber 12 in the height direction H can be greater than the depth of the transfer chamber 20 in the height direction H.

[0063] Therefore, in this embodiment, based on the different chamber functions of the first chamber 11 and the second chamber 12 of the buffer chamber 10 and the transmission chamber 20, the spatial distribution of the first chamber 11 and the second chamber 12 and the transmission chamber 20 is optimized, so that the space occupancy of each chamber is more reasonable, thereby improving the space utilization rate of the chamber structure 100 of the present application.

[0064] Continue to refer to Figure 3A transfer port A is provided on the cavity wall between the first chamber 11 and the transfer chamber 20. The semiconductor transfer apparatus further includes a transfer valve 500, which is used to seal or release the seal of the transfer port A. When the transfer valve 500 seals the transfer port A, the first chamber 11 can be switched to communicate with the outside atmosphere, so that the first chamber 11 is in an atmospheric state. Conversely, when the transfer valve 500 releases the seal of the transfer port A, the first chamber 11 is in communication with the transfer chamber 20. At this time, the first vacuum pump 400 can be used to maintain a vacuum state between the first chamber 11 and the transfer chamber 20.

[0065] It can be understood that the cavity wall between the transfer chamber 20 and the main chamber 30 can also be provided with a transfer port A and sealed or unsealed by a corresponding transfer valve 500, which will not be described in detail in this application.

[0066] Reference Figure 3 and Figure 4 The chamber structure 100 further defines a mounting chamber B communicating with the transfer port A. The transfer valve 500 includes a sealing plate 510, a connecting portion 520, and a driving portion 530, which are sequentially connected. The driving portion 530 is located in the mounting chamber B and is configured to drive the connecting portion 520 to move up and down along the height direction H, allowing the sealing plate 510 to extend into or out of the transfer port A, thereby sealing or releasing the seal of the transfer port A.

[0067] Continue to refer to Figure 3 The semiconductor transfer apparatus further includes a second vacuum pump 600, which is disposed outside the bottom of the chamber structure 100 and is used to evacuate the main chamber 30. The second vacuum pump 600, in conjunction with the first vacuum pump 400, allows the first chamber 11, the transfer chamber 20, and the main chamber 30 to quickly reach a target vacuum state, thereby improving wafer inspection efficiency.

[0068] Figure 5 This is a schematic diagram of the three-dimensional structure of a semiconductor transmission device provided by an embodiment of the present invention. Figure 6 A schematic diagram of the bottom structure of a chamber structure provided in one embodiment of the present utility model.

[0069] Please refer to Figure 5 The semiconductor transfer device further includes a support frame 700 , which is located outside the chamber structure 100 and supports the chamber structure 100 and the second vacuum pump 600 in the height direction H.

[0070] Specifically, the support frame 700 may include a support body 710 and multiple support columns 720 , wherein the multiple support columns 720 provide support force for the support body 710 at the outer edges of the support body 710 , and the chamber structure 100 and the second vacuum pump 600 are both supported on the multiple support columns 720 .

[0071] Please refer to Figure 5 and Figure 6 A first through hole C is provided on the bottom wall of the transfer chamber 20. The semiconductor transfer device also includes a support platform 800. The support platform 800 is provided on the support body 710 of the support frame 700 so that the support body 710 provides support force for it, and the support platform 800 passes through the first through hole C on the bottom wall of the transfer chamber 20 to extend into the transfer chamber 20, thereby being able to support the robotic arm 300.

[0072] A second through hole D is provided on the bottom wall of the main chamber 30, and the second vacuum pump 600 is sealedly connected to the bottom wall of the main chamber 30 at the second through hole D so that the second vacuum pump 600 is connected to the main chamber 30, thereby vacuuming the main chamber 30 through the second vacuum pump 600.

[0073] The semiconductor transmission device also includes a vibration isolator 900 and a control cabinet 1000. The vibration isolator 900 is arranged at the bottom of the chamber structure 100 outside the chamber structure 100 to absorb and isolate the vibration source and prevent the vibration energy of the chamber structure 100 from being transmitted to other parts.

[0074] The control electrical cabinet 1000 communicates or is electrically connected to the front-end transmission module 200 and the robotic arm 300 , and is used to control the working states of the front-end transmission module 200 and the robotic arm 300 to achieve wafer transmission and detection.

[0075] Although the embodiments of the present invention have been shown and described above, it can be understood that the above embodiments are illustrative and cannot be understood as limitations on the present invention. Those skilled in the art can change, modify, replace and modify the above embodiments within the scope of the present invention.

Claims

1. A semiconductor transmission device, characterized in that: It comprises a chamber structure (100), a front-end transmission module (200), and a robotic arm (300); The chamber structure (100) is formed with a buffer chamber (10), a transfer chamber (20), and a main chamber (30) that are interconnected, and the buffer chamber (10) is used to receive wafers transferred from the front-end transfer module (200); The robot arm (300) is arranged in the transfer chamber (20) and is used to transfer wafers between the buffer chamber (10) and the main chamber (30), so that the wafers can be inspected when they are moved into the main chamber (30) and can be moved out of the main chamber (30) after the inspection is completed.

2. The semiconductor transmission device according to claim 1, wherein The buffer chamber (10) and the transmission chamber (20) are located on one side of the main chamber (30) in a first horizontal direction (L) of the chamber structure (100), and the buffer chamber (10) and the transmission chamber (20) are arranged side by side in a second horizontal direction (W) of the chamber structure (100).

3. The semiconductor transmission device according to claim 1, wherein The chamber structure (100) is integrally formed by an injection molding process to form the buffer chamber (10), the transmission chamber (20), and the main chamber (30) that are interconnected.

4. The semiconductor transmission device according to claim 1, wherein The buffer chamber (10) comprises a first chamber (11) and a second chamber (12) arranged in sequence in a height direction (H) of the chamber structure (100), wherein the first chamber (11) is used to receive wafers transferred from the front-end transfer module (200); The semiconductor transmission device further comprises a first vacuum pump (400), wherein the first vacuum pump (400) is arranged in the second chamber (12) and is used to perform a vacuum process on the first chamber (11).

5. The semiconductor transmission device according to claim 4, wherein: The depth of the first chamber (11) in the height direction (H) is smaller than the depth of the transmission chamber (20) in the height direction (H), and the depth of the second chamber (12) in the height direction (H) is larger than the depth of the transmission chamber (20) in the height direction (H).

6. The semiconductor transmission device according to claim 4, wherein: A transmission port (A) is provided on the cavity wall between the first cavity (11) and the transmission cavity (20); The semiconductor transmission device further comprises a transmission valve (500), wherein the transmission valve (500) is used to seal the transmission port (A) or release the seal of the transmission port (A).

7. The semiconductor transmission device according to claim 6, wherein: The inner wall of the transmission chamber (20) has a plane segment (21) and an arc segment (22) connected to each other, and at least a portion of the transmission port (A) is arranged on the arc segment (22) to provide guidance for the movement of the robot arm (300) in the transmission chamber (20), so that the robot arm (300) moves along the arc segment (22) toward or away from the transmission port (A).

8. The semiconductor transmission device according to claim 6, wherein: The chamber structure (100) is further formed with a mounting cavity (B) communicating with the transmission port (A); The transmission valve (500) comprises a sealing plate (510), a connecting portion (520) and a driving portion (530) connected in sequence, wherein the driving portion (530) is located in the installation cavity (B) and is used to drive the connecting portion (520) to move up and down along the height direction (H), so that the sealing plate (510) can extend into or out of the transmission port (A) to seal the transmission port (A) or release the seal of the transmission port (A).

9. The semiconductor transmission device according to claim 4, wherein: The semiconductor transmission device further includes: a second vacuum pump (600), arranged outside the chamber structure (100) and used to perform a vacuum process on the main chamber (30); A support frame (700) is located outside the chamber structure (100) and supports the chamber structure (100) in the height direction (H), and the second vacuum pump (600) is arranged on the support frame (700).

10. The semiconductor transmission device according to claim 9, wherein: The bottom wall of the transmission chamber (20) is provided with a through hole (C); The semiconductor transmission device further comprises a supporting platform (800), wherein the supporting platform (800) is arranged on the supporting frame (700) and penetrates the through hole (C) and supports the mechanical arm (300).

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