Bipolar high-voltage pulse generator for preventing switch direct connection
By adopting the design of cascaded positive and negative polarity Marx main circuit and anti-shoot-through diode in the high-voltage pulse power supply system, the switch shoot-through problem caused by electromagnetic interference in the traditional system is solved, the high stability and reliability of the system are achieved, and bipolar high-voltage pulses can be output.
Patent Information
- Application Number
- CN202422096548.2
- Authority / Receiving Office
- CN · China
- Patent Type
- Utility models(China)
- Current Assignee / Owner
- Filing Date
- 2024-08-28
- Publication Date
- 2025-09-16
- Estimated Expiration
- 2034-08-28
AI Technical Summary
During the discharge phase, traditional high-voltage pulse power supply systems are prone to electromagnetic interference, which can cause MOS tubes to mis-conduct, forming a through loop, resulting in abnormally high short-circuit currents that damage the switches and poor system stability and reliability.
The cascaded positive and negative polarity Marx main circuit structure is adopted, combined with an anti-straight-through diode, and the control unit monitors and controls the conduction state of the switch tube to prevent the generation of short-circuit current.
It effectively prevents short-circuit faults caused by the direct conduction of the switch tube, greatly improves the operating stability and reliability of the system, and can output bipolar high-voltage pulses.
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Figure CN223348645U_ABST
Abstract
Description
Technical Field
[0001] The utility model relates to the field of pulses, in particular to a bipolar high-voltage pulse generator for preventing a switch from being directly connected. Background Art
[0002] Compared with unipolar pulses, bipolar pulses have better sterilization effects on bacteria, and bipolar pulse generators can effectively avoid the chemical corrosion of electrodes that occurs when unipolar pulse power is used.
[0003] One of the most common faults in traditional Marx circuits is that during the discharge phase, strong electromagnetic interference causes the MOS tube to mis-conduct, forming a direct loop between the MOS tubes and short-circuiting the energy storage capacitor. This short-circuit fault generates an abnormally high short-circuit current, which will damage the switch once it flows through. Therefore, the stability of traditional high-voltage pulse power supply systems is poor and needs to be improved. Utility Model Content
[0004] The purpose of the present utility model is to provide a bipolar high-voltage pulse generator that prevents switch shoot-through, so as to solve the problems raised in the above background technology.
[0005] To achieve the above purpose, the present invention provides the following technical solutions:
[0006] A bipolar high-voltage pulse generator for preventing switch shoot-through, comprising:
[0007] Constant current source, used to supply output constant current DC to the cascaded positive and negative polarity Marx main circuit;
[0008] The cascaded positive and negative polarity Marx main circuit is used to complete the charging and discharging of the internal capacitor through the different conduction states of the switch tube, thereby converting the input DC power into bipolar high-voltage pulses and outputting them to the application load; and an anti-shoot-through diode is introduced to cut off the short-circuit current generated during a fault.
[0009] The control unit is used to monitor the output bipolar high-voltage pulses of the cascaded positive and negative polarity Marx main circuits, receive the voltage and current feedback of the cascaded positive and negative polarity Marx main circuits, and control the half-bridge circuit to output PWM signals;
[0010] The half-bridge circuit is used to receive control from the control unit and output PWM signals to control the conduction state of the switch tubes of the cascaded positive and negative polarity Marx main circuits;
[0011] The output end of the constant current source is connected to the first input end of the cascaded positive and negative polarity Marx main circuit, the first output end of the cascaded positive and negative polarity Marx main circuit is connected to the applied load and the first input end of the control unit, the second output end of the cascaded positive and negative polarity Marx main circuit is connected to the second input end of the control unit, the output end of the control unit is connected to the input end of the half-bridge circuit, and the output end of the half-bridge circuit is connected to the second input end of the cascaded positive and negative polarity Marx main circuit.
[0012] As a further solution of the present invention: the cascaded positive and negative polarity Marx main circuit includes cascaded positive polarity Marx units and cascaded negative polarity Marx units, and the cascaded positive polarity Marx units are connected to the cascaded negative polarity Marx units.
[0013] As a further solution of the present invention: the cascaded positive polarity Marx unit includes multiple positive polarity Marx modules, which include a diode DP1, a MOS transistor SPb1, a capacitor CP1, a diode DPt1, and a MOS transistor SPa1. The positive electrode of the diode DP1 is connected to the D electrode of the MOS transistor SPb1, the negative electrode of the diode DP1 is connected to one end of the capacitor CP1, the other end of the capacitor CP1 is connected to the S electrode of the MOS transistor SPb1 and the positive electrode of the diode DPt1, the negative electrode of the diode DPt1 is connected to the D electrode of the MOS transistor SPa1, the G electrode of the MOS transistor SPa1 is connected to the output end of the half-bridge circuit, and the G electrode of the MOS transistor SPb1 is connected to the output end of the half-bridge circuit;
[0014] When the positive polarity Marx module is the first one, the positive electrode of the diode DP1 is connected to the negative electrode of the diode DP0, the positive electrode of the diode DP0 is connected to the output end of the constant current source, and the negative electrode of the diode DP1 is connected to the positive electrode of the diode DP1 of the next positive polarity Marx module; the S electrode of the MOS tube SPa1 is grounded, and the D electrode of the MOS tube SPa1 is connected to the S electrode of the MOS tube SPa1 of the next positive polarity Marx module;
[0015] When the positive polarity Marx module is in the middle position, the positive electrode of the diode DP1 is connected to the negative electrode of the diode DP1 of the previous positive polarity Marx module, and the negative electrode of the diode DP1 is connected to the positive electrode of the diode DP1 of the next positive polarity Marx module; the S electrode of the MOS tube SPa1 is connected to the D electrode of the MOS tube SPa1 of the previous positive polarity Marx module; the D electrode of the MOS tube SPa1 is connected to the S electrode of the MOS tube SPa1 of the next positive polarity Marx module;
[0016] When the positive polarity Marx module is the last one, the positive electrode of the diode DP1 is connected to the negative electrode of the diode DP1 of the previous positive polarity Marx module, and the negative electrode of the diode DP1 is connected to the cascaded negative polarity Marx unit; the S electrode of the MOS tube SPa1 is connected to the D electrode of the MOS tube SPa1 of the previous positive polarity Marx module; and the D electrode of the MOS tube SPa1 is connected to the cascaded negative polarity Marx unit.
[0017] As a further solution of the present invention: the cascaded negative polarity Marx unit includes multiple negative polarity Marx modules, the negative polarity Marx module includes a diode DN1, a MOS transistor SNb1, a capacitor CN1, a diode DNt1, and a MOS transistor SNa1, the S pole of the MOS transistor SNa1 is connected to the positive pole of the diode DNt1, the negative pole of the diode DNt1 is connected to the D pole of the MOS transistor SNb1 and one end of the capacitor CN1, the S pole of the MOS transistor SNb1 is connected to the negative pole of the diode DN1, the other end of the capacitor CN1 is connected to the positive pole of the diode DN1, the G pole of the MOS transistor SNb1 is connected to the output end of the half-bridge circuit, and the G pole of the MOS transistor SNa1 is connected to the output end of the half-bridge circuit;
[0018] When the negative polarity Marx module is the first one, the D pole of the MOS tube SNa1 is connected to the cascaded positive polarity Marx unit, the S pole of the MOS tube SNa1 is connected to the D pole of the MOS tube SNa1 of the next negative polarity Marx module, the cathode of the diode DNt1 is connected to the cascaded positive polarity Marx unit, and the anode of the diode DNt1 is connected to the cathode of the diode DNt1 of the next negative polarity Marx module;
[0019] When the negative polarity Marx module is in the middle position, the D pole of the MOS tube SNa1 is connected to the S pole of the MOS tube SNa1 of the previous negative polarity Marx module, the S pole of the MOS tube SNa1 is connected to the D pole of the MOS tube SNa1 of the next negative polarity Marx module, the cathode of the diode DNt1 is connected to the anode of the diode DNt1 of the previous negative polarity Marx module, and the anode of the diode DNt1 is connected to the cathode of the diode DNt1 of the next negative polarity Marx module;
[0020] When the negative polarity Marx module is the last one, the D pole of the MOS tube SNa1 is connected to the S pole of the MOS tube SNa1 of the previous negative polarity Marx module, the cathode of the diode DNt1 is connected to the anode of the diode DNt1 of the previous negative polarity Marx module, and the anode of the diode DNt1 is connected to the applied load.
[0021] Compared with the prior art, the beneficial effects of the present invention are as follows: the anti-straight-through diodes (DNt1, DPt1) introduced in the present invention can completely cut off the short-circuit current generated when the switch tubes are turned on at the same time, prevent the occurrence of short-circuit faults, and greatly improve the stability and reliability of the system operation; due to the use of a modular structure, the components are all the same. Without changing the circuit structure at all, the circuit can be optimized to output a single positive polarity or a single negative polarity high-voltage pulse voltage by optimizing the timing, thereby increasing functionality; only two sets of control signals are needed to control the four switches in the circuit separately. BRIEF DESCRIPTION OF THE DRAWINGS
[0022] Figure 1 The schematic diagram of a bipolar high-voltage pulse generator that prevents switch shoot-through.
[0023] Figure 2 The circuit diagram of a bipolar high-voltage pulse generator for preventing switch shoot-through is shown in FIG. DETAILED DESCRIPTION
[0024] The following will clearly and completely describe the technical solutions in the embodiments of the present invention in conjunction with the drawings in the embodiments of the present invention. Obviously, the described embodiments are only part of the embodiments of the present invention, rather than all the embodiments. Based on the embodiments of the present invention, all other embodiments obtained by ordinary technicians in this field without making creative work are within the scope of protection of the present invention.
[0025] See also Figure 1 and Figure 2 , a bipolar high-voltage pulse generator for preventing switch shoot-through, comprising:
[0026] Constant current source, used to output constant current DC to supply the cascaded positive and negative polarity Marx main circuit;
[0027] The cascaded positive and negative polarity Marx main circuit is used to complete the charging and discharging of the internal capacitor through the different conduction states of the switch tube, so as to convert the input DC power into bipolar high-voltage pulses and output them to the application load;
[0028] The control unit is used to monitor the output bipolar high-voltage pulses of the cascaded positive and negative polarity Marx main circuits, receive the voltage and current feedback of the cascaded positive and negative polarity Marx main circuits, and control the half-bridge circuit to output PWM signals;
[0029] The half-bridge circuit is used to receive control from the control unit and output PWM signals to control the conduction state of the switch tubes of the cascaded positive and negative polarity Marx main circuits;
[0030] The output end of the constant current source is connected to the first input end of the cascaded positive and negative polarity Marx main circuit, the first output end of the cascaded positive and negative polarity Marx main circuit is connected to the applied load and the first input end of the control unit, the second output end of the cascaded positive and negative polarity Marx main circuit is connected to the second input end of the control unit, the output end of the control unit is connected to the input end of the half-bridge circuit, and the output end of the half-bridge circuit is connected to the second input end of the cascaded positive and negative polarity Marx main circuit.
[0031] In the specific embodiment, the mains power supply, constant current source, control unit, and half-bridge circuit are all common technologies of traditional Marx circuits, and will not be described in detail here.
[0032] The existing technology has the following disadvantages:
[0033] (1) When semiconductor switches are connected in series to form a high-voltage switch, and then connected to a high-voltage power supply and a load to generate bipolar high-voltage pulses, high synchronization of the switches is required, and a voltage-sharing circuit is also required. If individual switches are turned on with a delay, they may be broken down by overvoltage, resulting in a short circuit.
[0034] (2) All-solid-state Marx avoids series connection of switches and prevents switch overvoltage. However, most of the current all-solid-state Marx circuits use a half-bridge or full-bridge cascade structure. High-voltage pulses will generate strong electromagnetic interference, causing direct damage to the switches of the half-bridge or full-bridge, reducing the reliability of the all-solid-state Marx circuit.
[0035] To address the aforementioned shortcomings of the prior art, the present invention provides a bipolar high-voltage pulse generator that prevents switch shoot-through. The main circuit utilizes a cascaded structure of positive and negative Marx circuits, capable of outputting bipolar high-voltage pulses without requiring any auxiliary circuitry. The anti-shoot-through diodes incorporated into the main circuit topology completely block the short-circuit current generated when the charging and MOS transistors are simultaneously conducting, preventing short-circuit failures and significantly improving system stability and reliability.
[0036] In this example: See Figure 2 The cascaded positive and negative polarity Marx main circuit includes a cascaded positive polarity Marx unit and a cascaded negative polarity Marx unit, and the cascaded positive polarity Marx unit is connected to the cascaded negative polarity Marx unit.
[0037] In this example: See Figure 2The cascaded positive-polarity Marx unit includes multiple positive-polarity Marx modules, each of which includes a diode DP1, a MOS transistor SPb1, a capacitor CP1, a diode DPt1, and a MOS transistor SPa1. The anode of the diode DP1 is connected to the D-pole of the MOS transistor SPb1, the cathode of the diode DP1 is connected to one end of the capacitor CP1, the other end of the capacitor CP1 is connected to the S-pole of the MOS transistor SPb1 and the anode of the diode DPt1, the cathode of the diode DPt1 is connected to the D-pole of the MOS transistor SPa1, the G-pole of the MOS transistor SPa1 is connected to the output end of the half-bridge circuit, and the G-pole of the MOS transistor SPb1 is connected to the output end of the half-bridge circuit.
[0038] When the positive polarity Marx module is the first one, the positive electrode of the diode DP1 is connected to the negative electrode of the diode DP0, the positive electrode of the diode DP0 is connected to the output end of the constant current source, and the negative electrode of the diode DP1 is connected to the positive electrode of the diode DP1 of the next positive polarity Marx module; the S electrode of the MOS tube SPa1 is grounded, and the D electrode of the MOS tube SPa1 is connected to the S electrode of the MOS tube SPa1 of the next positive polarity Marx module;
[0039] When the positive polarity Marx module is in the middle position, the positive electrode of the diode DP1 is connected to the negative electrode of the diode DP1 of the previous positive polarity Marx module, and the negative electrode of the diode DP1 is connected to the positive electrode of the diode DP1 of the next positive polarity Marx module; the S electrode of the MOS tube SPa1 is connected to the D electrode of the MOS tube SPa1 of the previous positive polarity Marx module; the D electrode of the MOS tube SPa1 is connected to the S electrode of the MOS tube SPa1 of the next positive polarity Marx module;
[0040] When the positive polarity Marx module is the last one, the positive electrode of the diode DP1 is connected to the negative electrode of the diode DP1 of the previous positive polarity Marx module, and the negative electrode of the diode DP1 is connected to the cascaded negative polarity Marx unit; the S electrode of the MOS tube SPa1 is connected to the D electrode of the MOS tube SPa1 of the previous positive polarity Marx module; and the D electrode of the MOS tube SPa1 is connected to the cascaded negative polarity Marx unit.
[0041] In this example: See Figure 2The cascaded negative polarity Marx unit includes multiple negative polarity Marx modules, which include a diode DN1, a MOS transistor SNb1, a capacitor CN1, a diode DNt1, and a MOS transistor SNa1. The S pole of the MOS transistor SNa1 is connected to the positive pole of the diode DNt1, the negative pole of the diode DNt1 is connected to the D pole of the MOS transistor SNb1 and one end of the capacitor CN1, the S pole of the MOS transistor SNb1 is connected to the negative pole of the diode DN1, the other end of the capacitor CN1 is connected to the positive pole of the diode DN1, the G pole of the MOS transistor SNb1 is connected to the output end of the half-bridge circuit, and the G pole of the MOS transistor SNa1 is connected to the output end of the half-bridge circuit.
[0042] When the negative polarity Marx module is the first one, the D pole of the MOS tube SNa1 is connected to the cascaded positive polarity Marx unit, the S pole of the MOS tube SNa1 is connected to the D pole of the MOS tube SNa1 of the next negative polarity Marx module, the cathode of the diode DNt1 is connected to the cascaded positive polarity Marx unit, and the anode of the diode DNt1 is connected to the cathode of the diode DNt1 of the next negative polarity Marx module;
[0043] When the negative polarity Marx module is in the middle position, the D pole of the MOS tube SNa1 is connected to the S pole of the MOS tube SNa1 of the previous negative polarity Marx module, the S pole of the MOS tube SNa1 is connected to the D pole of the MOS tube SNa1 of the next negative polarity Marx module, the cathode of the diode DNt1 is connected to the anode of the diode DNt1 of the previous negative polarity Marx module, and the anode of the diode DNt1 is connected to the cathode of the diode DNt1 of the next negative polarity Marx module;
[0044] When the negative polarity Marx module is the last one, the D pole of the MOS tube SNa1 is connected to the S pole of the MOS tube SNa1 of the previous negative polarity Marx module, the cathode of the diode DNt1 is connected to the anode of the diode DNt1 of the previous negative polarity Marx module, and the anode of the diode DNt1 is connected to the applied load.
[0045] For a complete description of the circuit's working process, please refer to Figure 2 In order to distinguish the components of different positive polarity Marx modules in the complete circuit, they are marked differently. The MOS tube SPa1 is adjusted to SPa1~SPan based on different positive polarity Marx modules, the diode DP1 is adjusted to DP1~DPn, the capacitor CP1 is adjusted to CP1~CPn, the diode DPt1 is adjusted to the diode DPt1~DPtn, and the MOS tube SPb1 is adjusted to the MOS tube SPb1~SPan. Similarly, the negative polarity Marx module is adjusted similarly.
[0046] When multiple MOS transistors (as charging switches) SPa1~SPan and MOS transistors (as charging switches) SNa1~SNan are turned on, the DC source Vin charges the energy storage capacitor in each stage of the circuit in parallel through the diode, the anti-through diode and the MOS transistor. This process is called parallel charging.
[0047] For example, using the last positive-polarity Marx module and the last negative-polarity Marx module, voltage VIN passes through diodes DP0 to DPn, capacitor CPn, diode DPtn, and MOS transistors SPan to SPa1 to reach the common ground GND, forming a loop to charge capacitor CPn. Voltage passes through diodes DP0 to DPn, MOS transistors SNa1 to SNan, diode DNtn, capacitor CNn, diodes DNn to DN1, and MOS transistors SPan to SPa1 to reach the common ground GND, forming a loop to charge capacitor CNn. Therefore, capacitors CP1 to CPn and CN1 to CNn are both charged.
[0048] When charging in parallel, all diodes in the circuit (DP0 to DPn, DPt1 to DPtn, DNt1 to DNtn, DN1 to DNn) are turned on as a low-impedance charging path.
[0049] After the charging stage is over, the MOS tubes (as discharge switches) SPb1~SPbn are turned on, and the MOS tubes SNa1~SNan remain turned on; at this time, the capacitors CP1~CPn release the voltage stored in the previous stage in series, which will generate a positive polarity high-voltage pulse at the intersection of the diode DPn and the capacitor CPn. Since the MOS tubes SNa1~SNan of the cascaded negative polarity Marx unit are all in the on state at this time, the positive polarity high-voltage pulse passes through SNa1~SNan and CNn and is then output to the application load on the far right for discharge. The voltage amplitude is n times Vin (n is the number of capacitors CP1~CPn, and Vin is the voltage input from the constant current source to the cascaded positive and negative polarity Marx main circuit).
[0050] After capacitors CP1-CPn have finished discharging, when MOS transistors SNb1-SNbn turn on and MOS transistors SPa1-SPan remain on, energy storage capacitors CN1-CNn, similarly connected in series, release the voltage stored during the charging phase. This generates a negative high-voltage pulse at the intersection of diode DNn and capacitor CNn. Because MOS transistors SPa1-SPan are on, the negative high-voltage pulse passes through SPan-SPan and is grounded, forming a loop and ultimately outputting a negative high-voltage pulse on the right. At this point, the main circuit output voltage amplitude is n times -Vin (n is the number of capacitors CN1-CNn).
[0051] By repeatedly charging and discharging the capacitor, a bipolar high voltage pulse is output for the applied load.
[0052] Let's take an example to illustrate the role of the anti-shoot-through diode. During the discharge period, MOS transistor SPb2 is turned on. Assume that due to strong electromagnetic interference, MOS transistor SPa2 is turned on. If there are no anti-shoot-through diodes DPt1 and DPt2, switches SPb2 and SPa2 will short-circuit capacitor CP1. The huge short-circuit current may damage switches SPb2 and SPa2. Figure 2 In the circuit shown, even if the switches SPb2 and SPa2 are turned on at the same time, the capacitor CP1 will not be short-circuited due to the reverse blocking effect of the diode DPt1, thereby preventing the switches SPb2 and SPa2 from being damaged.
[0053] This utility model Figure 1 The constant current source can be powered by AC power or by batteries, and there is no restriction on the supply voltage of the constant current source.
[0054] This utility model Figure 2 The semiconductor switches (MOS tubes) used are silicon carbide metal oxide semiconductor field effect transistors (SIC MOSFETs). In addition, thyristors (SCRs), gate turn-off thyristors (GTOs), insulated gate bipolar transistors (IGBTs), and integrated gate commutated turn-off thyristors (IGCTs) can also be used.
[0055] In addition to generating bipolar pulses, the utility model can also generate positive and negative polarity pulses separately. When generating positive or negative polarity pulses, you can use Figure 2 The main circuit structure shown in the figure can also be used to generate positive polarity pulses as long as Figure 2 The first half, namely the main circuit of the positive part (cascaded positive polarity Marx unit), the output of this part is HV pulse, which is directly connected to the load. Figure 2 The circuit of the latter half, namely the Negative part, is not needed; when generating a negative polarity pulse, only Figure 2 The latter half, namely the main circuit of the Negative part (cascaded negative polarity Marx unit), is directly connected to the DC charging power supply Vin. Figure 2 The first half, that is, the positive part of the circuit is not needed.
[0056] It is obvious to those skilled in the art that the present invention is not limited to the details of the exemplary embodiments described above, and that the present invention can be implemented in other specific forms without departing from the spirit or essential features of the present invention. Therefore, the embodiments should be considered in all respects as exemplary and non-restrictive.
[0057] In addition, it should be understood that although this specification is described in terms of implementation methods, not every implementation method contains only one independent technical solution. This narrative method of the specification is only for the sake of clarity. Those skilled in the art should regard the specification as a whole. The technical solutions in each embodiment can also be appropriately combined to form other implementation methods that can be understood by those skilled in the art.
Claims
1. A bipolar high-voltage pulse generator for preventing switch shoot-through, characterized in that: The bipolar high-voltage pulse generator for preventing switch shoot-through includes: The cascaded positive and negative polarity Marx main circuit is used to complete the charging and discharging of the internal capacitor through the different conduction states of the switch tube, thereby converting the input DC power into bipolar high-voltage pulses and outputting them to the application load; and an anti-shoot-through diode is introduced to cut off the short-circuit current generated during a fault. The control unit is used to monitor the output bipolar high-voltage pulses of the cascaded positive and negative polarity Marx main circuits, receive the voltage and current feedback of the cascaded positive and negative polarity Marx main circuits, and control the half-bridge circuit to output PWM signals; The half-bridge circuit is used to receive control from the control unit and output PWM signals to control the conduction state of the switch tubes of the cascaded positive and negative polarity Marx main circuits; A first output end of the cascaded positive and negative polarity Marx main circuit is connected to an applied load and a first input end of a control unit, a second output end of the cascaded positive and negative polarity Marx main circuit is connected to a second input end of the control unit, an output end of the control unit is connected to an input end of a half-bridge circuit, and an output end of the half-bridge circuit is connected to a second input end of the cascaded positive and negative polarity Marx main circuit; The cascaded positive and negative polarity Marx main circuit includes a cascaded positive polarity Marx unit and a cascaded negative polarity Marx unit, and the cascaded positive polarity Marx unit is connected to the cascaded negative polarity Marx unit.
2. The bipolar high-voltage pulse generator for preventing switch shoot-through according to claim 1, characterized in that: The bipolar high-voltage pulse generator for preventing the switch from being turned on further comprises a constant current source for supplying output constant current direct current to the cascaded positive and negative polarity Marx main circuits; The output end of the constant current source is connected to the first input end of the cascaded positive and negative polarity Marx main circuit.
3. The bipolar high-voltage pulse generator for preventing switch shoot-through according to claim 1, characterized in that: The cascaded positive polarity Marx unit includes multiple positive polarity Marx modules, which include a diode DP1, a MOS transistor SPb1, a capacitor CP1, a diode DPt1, and a MOS transistor SPa1. The positive electrode of the diode DP1 is connected to the D electrode of the MOS transistor SPb1, the negative electrode of the diode DP1 is connected to one end of the capacitor CP1, the other end of the capacitor CP1 is connected to the S electrode of the MOS transistor SPb1 and the positive electrode of the diode DPt1, the negative electrode of the diode DPt1 is connected to the D electrode of the MOS transistor SPa1, the G electrode of the MOS transistor SPa1 is connected to the output end of the half-bridge circuit, and the G electrode of the MOS transistor SPb1 is connected to the output end of the half-bridge circuit. When the positive polarity Marx module is the first one, the positive electrode of the diode DP1 is connected to the negative electrode of the diode DP0, the positive electrode of the diode DP0 is connected to the output end of the constant current source, and the negative electrode of the diode DP1 is connected to the positive electrode of the diode DP1 of the next positive polarity Marx module; the S electrode of the MOS tube SPa1 is grounded, and the D electrode of the MOS tube SPa1 is connected to the S electrode of the MOS tube SPa1 of the next positive polarity Marx module; When the positive polarity Marx module is in the middle position, the positive electrode of the diode DP1 is connected to the negative electrode of the diode DP1 of the previous positive polarity Marx module, and the negative electrode of the diode DP1 is connected to the positive electrode of the diode DP1 of the next positive polarity Marx module; the S electrode of the MOS tube SPa1 is connected to the D electrode of the MOS tube SPa1 of the previous positive polarity Marx module; the D electrode of the MOS tube SPa1 is connected to the S electrode of the MOS tube SPa1 of the next positive polarity Marx module; When the positive polarity Marx module is the last one, the positive electrode of the diode DP1 is connected to the negative electrode of the diode DP1 of the previous positive polarity Marx module, and the negative electrode of the diode DP1 is connected to the cascaded negative polarity Marx unit; the S electrode of the MOS tube SPa1 is connected to the D electrode of the MOS tube SPa1 of the previous positive polarity Marx module; and the D electrode of the MOS tube SPa1 is connected to the cascaded negative polarity Marx unit.
4. The bipolar high-voltage pulse generator for preventing switch shoot-through according to claim 1 or 3, characterized in that: The cascaded negative polarity Marx unit includes multiple negative polarity Marx modules, which include a diode DN1, a MOS transistor SNb1, a capacitor CN1, a diode DNt1, and a MOS transistor SNa1. The S pole of the MOS transistor SNa1 is connected to the positive pole of the diode DNt1, the negative pole of the diode DNt1 is connected to the D pole of the MOS transistor SNb1 and one end of the capacitor CN1, the S pole of the MOS transistor SNb1 is connected to the negative pole of the diode DN1, the other end of the capacitor CN1 is connected to the positive pole of the diode DN1, the G pole of the MOS transistor SNb1 is connected to the output end of the half-bridge circuit, and the G pole of the MOS transistor SNa1 is connected to the output end of the half-bridge circuit; When the negative polarity Marx module is the first one, the D pole of the MOS tube SNa1 is connected to the cascaded positive polarity Marx unit, the S pole of the MOS tube SNa1 is connected to the D pole of the MOS tube SNa1 of the next negative polarity Marx module, the cathode of the diode DNt1 is connected to the cascaded positive polarity Marx unit, and the anode of the diode DNt1 is connected to the cathode of the diode DNt1 of the next negative polarity Marx module; When the negative polarity Marx module is in the middle position, the D pole of the MOS tube SNa1 is connected to the S pole of the MOS tube SNa1 of the previous negative polarity Marx module, the S pole of the MOS tube SNa1 is connected to the D pole of the MOS tube SNa1 of the next negative polarity Marx module, the cathode of the diode DNt1 is connected to the anode of the diode DNt1 of the previous negative polarity Marx module, and the anode of the diode DNt1 is connected to the cathode of the diode DNt1 of the next negative polarity Marx module; When the negative polarity Marx module is the last one, the D pole of the MOS tube SNa1 is connected to the S pole of the MOS tube SNa1 of the previous negative polarity Marx module, the cathode of the diode DNt1 is connected to the anode of the diode DNt1 of the previous negative polarity Marx module, and the anode of the diode DNt1 is connected to the applied load.