Ultrapure water high-recovery-rate preparation system for semiconductor industry

Abstract

The utility model relates to the technical field of ultrapure water preparation, and provides an ultrapure water high recovery rate preparation system for semiconductor industry, which comprises a raw water tank, the raw water tank leads to a primary TOC (Total Organic Carbon) removal system, the primary TOC removal system leads to a primary degassing system, the primary degassing system leads to a primary EDI (Electrodeionization) device for preliminary desalination, an alkali adding system leads to the primary EDI device, and the primary EDI device leads to a secondary EDI device for secondary desalination. The primary EDI device is communicated to the secondary EDI device, the secondary EDI device is communicated to the ultrapure water tank, the ultrapure water tank is communicated to the secondary TOC removal system, the secondary TOC removal system is communicated to the tertiary polishing system, the tertiary polishing system is communicated to the secondary degassing system, and the secondary degassing system is communicated to the terminal UF. By means of the technical scheme, the problem that in the prior art, the preparation effect of ultrapure water for the semiconductor industry is poor is solved.

Description

Technical Field

[0001] The utility model relates to the technical field of ultrapure water preparation, and in particular to a high-recovery ultrapure water preparation system for the semiconductor industry. Background Art

[0002] In recent years, my country's semiconductor industry has developed rapidly, essentially taking the lead globally. Ultrapure water is indispensable to semiconductor production. To reduce scrap rates and mitigate business losses, ensuring ultrapure water quality is crucial for production. Currently, the semiconductor industry primarily produces ultrapure water using a membrane desalination process combined with a polishing resin. However, achieving water quality requirements exceeding the American Standard E-1.3 requires rigorous process design and equipment selection, and each step in the production process requires significant amounts of water. Therefore, adopting a water resource-efficient approach to achieve high-quality ultrapure water is imperative. Utility Model Content

[0003] The utility model provides a high-recovery preparation system for ultrapure water for the semiconductor industry, which solves the problem of poor preparation effect of ultrapure water for the semiconductor industry in the related art.

[0004] The technical solution of the utility model is as follows:

[0005] A high-recovery ultrapure water preparation system for the semiconductor industry, comprising:

[0006] Raw water tank,

[0007] A primary TOC removal system, the raw water tank leads to the primary TOC removal system,

[0008] a primary degassing system, said primary degassing system leading to said primary degassing system,

[0009] a primary EDI device, the primary degassing system leading to the primary EDI device for preliminary desalination,

[0010] an alkali adding system, the alkali adding system leading to the primary EDI device,

[0011] a secondary EDI device, said primary EDI device leading to said secondary EDI device,

[0012] an ultrapure water tank, the secondary EDI device leads to the ultrapure water tank,

[0013] Secondary TOC removal system, the ultrapure water tank leads to the secondary TOC removal system,

[0014] A three-stage polishing system, the two-stage TOC removal system leads to the three-stage polishing system,

[0015] a secondary degassing system, the tertiary polishing system leading to the secondary degassing system,

[0016] Terminal UF, to which the secondary degassing system leads.

[0017] As a further technical solution, it also includes:

[0018] Raw water pump, which is used to pump the raw water in the raw water tank into the primary TOC removal system,

[0019] EDI booster pump, the first-level EDI device leads to the EDI booster pump, the EDI booster pump leads to the second-level EDI device,

[0020] The terminal delivery pump is connected to the ultrapure water tank, and the terminal delivery pump is used to deliver the water in the ultrapure water tank to the secondary TOC removal system.

[0021] A terminal booster pump, to which the secondary degassing system leads, is used for boosting pressure to ensure stable water pressure at the point of use.

[0022] As a further technical solution, the raw water tank is a secondary reverse osmosis water production tank.

[0023] As a further technical solution, the raw water pump is a two-stage reverse osmosis water production boost pump.

[0024] As a further technical solution, the secondary degassing system is a degassing membrane system.

[0025] As a further technical solution, the primary TOC removal system and the secondary TOC removal system are both TOC-UV removers.

[0026] As a further technical solution, the alkali dosing system is a NaOH dosing system.

[0027] As a further technical solution, the primary EDI device and the secondary EDI device are two-stage series-connected environmentally friendly desalination devices that do not require acid or alkali regeneration.

[0028] As a further technical solution, it also includes

[0029] The terminal heat exchanger, the terminal delivery pump leads to the terminal heat exchanger, the terminal heat exchanger leads to the secondary TOC removal system, and the terminal heat exchanger is a plate heat exchanger.

[0030] As a further technical solution, it also includes

[0031] Concentrated water tank, the terminal UF, the first-level EDI device and the second-level EDI device lead to the concentrated water tank,

[0032] Concentrated water lift pump, the concentrated water tank leads to the concentrated water lift pump,

[0033] High-pressure pump, the concentrated water lift pump leads to the high-pressure pump,

[0034] A reverse osmosis system, wherein the high-pressure pump leads to the reverse osmosis system, and the reverse osmosis system leads to the raw water tank.

[0035] The working principle and beneficial effects of the utility model are as follows:

[0036] In the present invention, the raw water tank is used to store raw water to be treated. The raw water in the raw water tank is first conveyed to a primary TOC removal system, which removes total organic carbon (TOC) from the water to reduce the impact of organic matter on subsequent treatment units. It then enters a primary degassing system to remove dissolved gases, such as oxygen and carbon dioxide, from the water to reduce oxidation reactions during subsequent treatment. The degassed water then enters a primary EDI (Electrodeionization) device for preliminary desalination. The EDI device utilizes ion exchange resins under the action of an electric field to remove dissolved salts from the water. An alkali addition system is used to add an appropriate amount of alkaline substances to the water to adjust its pH value, facilitating subsequent EDI treatment and improving desalination efficiency. The water, which has undergone preliminary desalination, then enters a secondary EDI device for more in-depth desalination treatment to further remove ions. The water treated by the secondary EDI device is then stored in an ultrapure water tank. The water from the ultrapure water tank then enters a secondary TOC removal system to further remove residual organic matter, ensuring that the ultrapure water's TOC content meets the semiconductor industry's requirements. The water after secondary TOC removal enters a tertiary polishing system to further remove trace ions and organic matter, improving water purity. The polished water then enters a secondary degassing system to further remove dissolved gases, further improving the quality of the ultrapure water. Finally, the water passes through a terminal UF (ultrafiltration) system to remove any residual particles and microorganisms, ensuring that the final ultrapure water meets the stringent requirements of the semiconductor industry.

[0037] The raw water enters the raw water tank, passes through the raw water tank and enters the first-level TOC removal system to reduce TOC from 50ppb to 10ppb, then enters the first-level degassing system to reduce DO from 8ppm to 3ppb, then enters the first-level EDI device to increase the water resistivity from 0.2MΩ·cm to 15MΩ·cm, and then passes through the second-level EDI device to increase the water resistivity to 17MΩ·cm. The second-level EDI product water enters the ultrapure water tank. After passing through the ultrapure water tank, the ultrapure water enters the second-level TOC removal system to reduce TOC from 10ppb to 1ppb. The TOC effluent enters the third-level polishing system to increase the product water resistivity to 18.2MΩ·cm and reduce the boron concentration to below 5ppt. The product water of the third-level polishing system enters the second-level degassing system to reduce DO from 3ppb to 1ppb. Finally, it passes through the terminal UF to reduce the particle index ≥0.05μm to 0.2 / ml.

[0038] The raw water enters the primary TOC removal system, where TOC is reduced from 50ppb to 10ppb under 185nm ultraviolet irradiation. The water then enters the primary degassing system, where DO is reduced from 8ppm to 3ppb through the action of the degassing membrane. A security filter with a filtration accuracy of 1um is installed in front of the primary EDI device to protect the two EDI systems. The recovery rate of the primary EDI device is designed to be 90%, which increases the resistivity of the water from 0.2MΩ·cm to 15MΩ·cm. The recovery rate of the secondary EDI system is designed to be 90%-95%, which increases the resistivity of the water to 17MΩ·cm. The EDI-produced water enters the ultrapure water tank.

[0039] UPVC pipes are used before the ultrapure water tank, Clean-PVC pipes are used from the outlet of the ultrapure water tank to the inlet of the three-stage polishing system, PVDF-HP pipes are used from the water produced by the three-stage polishing system to the terminal UF outlet and the water use point, PVDF-HP pipes are also used between the three-stage polishing systems, and Clean-PVC pipes are used for the return pipe from the water use point to the ultrapure water tank, which meets the system usage requirements while reducing investment costs.

[0040] The use of a two-stage EDI device for desalination can avoid the generation of wastewater by acid-base regeneration, which is friendly to the ecological environment. At the same time, the water quality of the EDI effluent is stable, and the two-stage EDI has a significant effect on the removal of boron ions and TOC, reducing the processing pressure of the back-end system. The two-stage degassing system can be used to degas in sections according to actual needs, ensuring that the terminal effluent DO is less than 1ppb under stable conditions. The two-stage TOC removal device can be used to remove TOC in sections according to actual needs, ensuring that the terminal effluent TOC is less than 1ppb under stable conditions; the use of an alkali addition system before the secondary EDI device can increase the pH of the EDI inlet water, prompting boron ions to be adsorbed by the resin under alkaline conditions. The boron removal resin is used in conjunction with the NaOH dosing system to reduce the boron ion content in the produced water. BRIEF DESCRIPTION OF THE DRAWINGS

[0041] The preferred embodiments will be described below in a clear and understandable manner with reference to the accompanying drawings to further illustrate the above-mentioned characteristics, technical features, advantages and implementation methods of the present invention.

[0042] Figure 1 This is a schematic structural diagram of Example 1 of the present utility model;

[0043] Figure 2 This is a schematic structural diagram of Example 2 of the present utility model.

[0044] In the figure: raw water tank-1, raw water pump-2, primary TOC removal system-3, primary degassing system-4, primary EDI device-5, alkali addition system-501, EDI booster pump-6, secondary EDI device-7, ultrapure water tank-8, terminal transfer pump-9, terminal heat exchanger-10, secondary TOC removal system-11, tertiary polishing system-12, secondary degassing system-15, terminal UF-17, terminal booster pump-16, concentrate tank-18, concentrate lift pump-19, high-pressure pump-20, reverse osmosis system-21. DETAILED DESCRIPTION

[0045] In order to more clearly illustrate the embodiments of the present invention or the technical solutions in the prior art, the specific implementation methods of the present invention will be described below with reference to the accompanying drawings. Obviously, the drawings described below are only some embodiments of the present invention. For those skilled in the art, other drawings and other implementation methods can be obtained based on these drawings without inventive work.

[0046] To simplify the drawings, only the parts relevant to the utility model are schematically shown in each figure; they do not represent the actual structure of the product. Furthermore, to simplify the drawings and facilitate understanding, in some figures, only one of the components with the same structure or function is schematically shown or labeled. In this document, "one" not only means "only one" but also "more than one," and "several" includes "two" and "more than two."

[0047] It should be noted that, unless otherwise specified or limited, the terms "mounted," "connected," and "connected" should be understood broadly. For example, they can refer to fixed, detachable, or integral connections; mechanical or electrical connections; direct or indirect connections through an intermediary; and internal communication between two components. Those skilled in the art will understand the specific meanings of these terms in this utility model based on the specific circumstances.

[0048] In addition, in the description of the present application, the terms "first", "second", etc. are only used to distinguish the description and cannot be understood as indicating or implying relative importance.

[0049] Example 1

[0050] Reference Figure 1 , which is the first embodiment of the utility model, proposes a high-recovery ultrapure water preparation system for the semiconductor industry, including: a raw water tank 1, the raw water tank 1 leads to a primary TOC removal system 3, the primary TOC removal system 3 leads to a primary degassing system 4, the primary degassing system 4 leads to a primary EDI device 5 for preliminary desalination, an alkali addition system 501 leads to the primary EDI device 5, the primary EDI device 5 leads to a secondary EDI device 7, the secondary EDI device 7 leads to an ultrapure water tank 8, the ultrapure water tank 8 leads to a secondary TOC removal system 11, the secondary TOC removal system 11 leads to a tertiary polishing system 12, the tertiary polishing system 12 leads to a secondary degassing system 15, and the secondary degassing system 15 leads to a terminal UF17.

[0051] In this embodiment, raw water tank 1 is used to store raw water to be treated. The raw water in raw water tank 1 is first transported to a primary TOC removal system 3, which removes total organic carbon (TOC) from the water to reduce the impact of organic matter on subsequent treatment units. The water, after TOC removal, then enters a primary degassing system 4, which removes dissolved gases such as oxygen and carbon dioxide to reduce oxidation reactions during subsequent treatment. The degassed water then enters a primary EDI (Electrodeionization) device 5, which performs preliminary desalination. The EDI device uses ion exchange resin under the action of an electric field to remove dissolved salts from the water. An alkali addition system 501 is used to add an appropriate amount of alkaline material to the water to adjust its pH, facilitating subsequent EDI treatment and improving desalination efficiency. The water, after preliminary desalination, then enters a secondary EDI device 7 for further desalination to further remove ions. The water treated by the secondary EDI device 7 is then stored in an ultrapure water tank 8. The water in the ultrapure water tank 8 then enters a secondary TOC removal system 11 to further remove residual organic matter, ensuring that the ultrapure water's TOC content meets the semiconductor industry's requirements. The water, after secondary TOC removal, enters a tertiary polishing system 12 to further remove trace ions and organic matter, improving water purity. The polished water then enters a secondary degassing system 15 to further remove dissolved gases, further improving the quality of the ultrapure water. Finally, the water passes through UF (ultrafiltration) terminal 17 to remove any residual particles and microorganisms, ensuring that the resulting ultrapure water meets the stringent requirements of the semiconductor industry.

[0052] The raw water enters the raw water tank 1, and then enters the primary TOC removal system 3 to reduce TOC from 50ppb to 10ppb, and then enters the primary degassing system 4 to reduce DO from 8ppm to 3ppb, and then enters the primary EDI device 5 to increase the resistivity of the water from 0.2MΩ·cm to 15MΩ·cm, and then passes through the secondary EDI device 7 to increase the resistivity of the water to 17MΩ·cm. The secondary EDI product water enters the ultrapure water tank 8, and the ultrapure water passes through the ultrapure water tank 8. After entering the pure water tank 8, it enters the secondary TOC removal system 11, reducing TOC from 10ppb to 1ppb. The TOC effluent enters the tertiary polishing system 12, increasing the resistivity of the produced water to 18.2MΩ·cm and reducing the boron concentration to below 5ppt. The produced water from the tertiary polishing system 12 enters the secondary degassing system 15, reducing DO from 3ppb to 1ppb. Finally, it passes through the terminal UF17, reducing the particle index of ≥0.05μm to 0.2 / ml.

[0053] The raw water enters the primary TOC removal system 3, where TOC is reduced from 50 ppb to 10 ppb under 185 nm ultraviolet irradiation. The raw water then enters the primary degassing system 4, where DO is reduced from 8 ppm to 3 ppb through the action of the degassing membrane. A security filter with a filtration accuracy of 1 μm is installed in front of the primary EDI device 5 to protect the two EDI systems. The recovery rate of the primary EDI device 5 is designed to be 90%, which increases the resistivity of the water from 0.2 MΩ·cm to 15 MΩ·cm. The recovery rate of the secondary EDI system is designed to be 90%-95%, which increases the resistivity of the water to 17 MΩ·cm. The EDI-produced water enters the ultrapure water tank 8.

[0054] UPVC pipes are used before the ultrapure water tank 8, Clean-PVC pipes are used from the outlet of the ultrapure water tank to the inlet of the three-stage polishing system 12, PVDF-HP pipes are used from the water produced by the three-stage polishing system 12 to the outlet of the terminal UF17 and to the water use point, PVDF-HP pipes are also used between the three-stage polishing systems 12, and Clean-PVC pipes are used for the return pipe from the water use point to the ultrapure water tank 8, which meets the system usage requirements while reducing investment costs.

[0055] The use of a two-stage EDI device for desalination can avoid the generation of wastewater by acid-base regeneration, which is friendly to the ecological environment. At the same time, the water quality of the EDI effluent is stable, and the two-stage EDI has a significant effect on the removal of boron ions and TOC, reducing the processing pressure of the back-end system. The two-stage degassing system can be used to degas in sections according to actual needs, ensuring that the terminal effluent DO is less than 1ppb under stable conditions. The two-stage TOC removal device can be used to remove TOC in sections according to actual needs, ensuring that the terminal effluent TOC is less than 1ppb under stable conditions; the use of an alkali addition system 501 before the secondary EDI device 7 can increase the pH of the EDI inlet water, prompting boron ions to be adsorbed by the resin under alkaline conditions. The boron removal resin is used in conjunction with the NaOH dosing system to reduce the boron ion content in the produced water.

[0056] Furthermore, it also includes: a raw water pump 2, which is used to pump the raw water in the raw water tank 1 into the first-level TOC removal system 3, the first-level EDI device 5 leads to the EDI booster pump 6, the EDI booster pump 6 leads to the second-level EDI device 7, the ultrapure water tank 8 leads to the terminal delivery pump 9, the terminal delivery pump 9 is used to deliver the water in the ultrapure water tank 8 into the second-level TOC removal system 11, the second-level degassing system 15 leads to the terminal booster pump 16, and the terminal booster pump 16 is used to increase the pressure to ensure stable water pressure at the point of use.

[0057] In this embodiment, the raw water pump 2: the raw water pump 2 is used to pump the raw water 2 in the raw water tank 1 into the primary TOC removal system 3 to ensure that the raw water can smoothly enter the subsequent treatment process. The primary EDI device 5 leads to the EDI booster pump 6, and the EDI booster pump 6 leads to the secondary EDI device 7. The EDI booster pump 6 is used to increase the water pressure to ensure that the water can smoothly pass through the secondary EDI device 7 for deeper desalination treatment. The ultrapure water tank 8 leads to the terminal delivery pump 9, and the terminal delivery pump 9 is used to deliver the water in the ultrapure water tank 8 to the secondary TOC removal system 11 to ensure that the water can smoothly enter the next treatment process. The secondary degassing system 15 leads to the terminal booster pump 16, and the terminal booster pump 16 is used to increase the pressure to ensure the stability of the water pressure at the point of use, and to ensure the stability of the pressure of the ultrapure water during the delivery process to meet the needs of the semiconductor production line.

[0058] Furthermore, the raw water tank 1 is a secondary reverse osmosis water production tank.

[0059] In this embodiment, the raw water tank 1 is a secondary reverse osmosis nitrogen seal water tank, and the raw water is secondary reverse osmosis water with a conductivity of ≤5μs / cm. The water in the raw water tank 1 has undergone secondary reverse osmosis treatment. This step helps to improve the purity of the raw water and provide a high-quality water source for subsequent treatment.

[0060] Furthermore, the raw water pump 2 is a two-stage reverse osmosis water production boost pump.

[0061] In this embodiment, raw water pump 2 not only pumps water from raw water tank 1 for subsequent treatment, but also acts as a pump for boosting the secondary reverse osmosis water output. This means the water in raw water tank 1 has already undergone secondary reverse osmosis treatment, and raw water pump 2 serves to further boost the pressure of this water so it can smoothly enter the subsequent treatment process.

[0062] Furthermore, the secondary degassing system 15 is a degassing membrane system.

[0063] In this embodiment, the secondary degassing system 15 is a degassing membrane system. The degassing membrane system is an efficient degassing method that removes dissolved gases in water, such as oxygen and carbon dioxide, through membrane technology to improve the quality of ultrapure water.

[0064] Furthermore, both the primary TOC removal system 3 and the secondary TOC removal system 11 are TOC-UV removers.

[0065] In this embodiment, both the primary TOC removal system 3 and the secondary TOC removal system 11 use a TOC-UV remover. The TOC-UV remover is a technology that uses ultraviolet radiation to degrade organic matter in water and can effectively remove total organic carbon (TOC) in water.

[0066] Furthermore, the alkali adding system 501 is a NaOH dosing system.

[0067] In this embodiment, the alkali dosing system 501 uses sodium hydroxide (NaOH) as the alkaline substance to adjust the pH of the water, thereby facilitating subsequent EDI treatment and improving desalination efficiency. Using the NaOH dosing system to adjust the pH of the water can improve the efficiency of subsequent EDI treatment and further enhance the quality of ultrapure water.

[0068] Furthermore, the primary EDI device 5 and the secondary EDI device 7 are two-stage series-connected environmentally friendly desalination devices that do not require acid or alkali regeneration.

[0069] In this embodiment, both the primary EDI unit 5 and the secondary EDI unit 7 are environmentally friendly desalination units that do not require acid-base regeneration. These two units are connected in series. This design reduces the need for acid-base regeneration, reduces chemical consumption and wastewater discharge, and improves the environmental performance of the system.

[0070] Furthermore, it also includes: a terminal heat exchanger 10, a terminal delivery pump 9 leads to the terminal heat exchanger 10, the terminal heat exchanger 10 leads to the secondary TOC removal system 11, and the terminal heat exchanger 10 is a plate heat exchanger.

[0071] In this embodiment, the terminal heat exchanger 10 is installed after the terminal delivery pump 9 and before the secondary TOC removal system 11. This plate-type heat exchanger is used to regulate the temperature of the ultrapure water to ensure it meets the requirements of semiconductor production processes. By using a plate-type heat exchanger as the terminal heat exchanger 10, the ultrapure water temperature can be more precisely controlled, further improving the quality of the ultrapure water.

[0072] Example 2

[0073] Reference Figure 2 , which is the second embodiment of the present utility model. Different from the first embodiment, this embodiment further includes: a concentrate tank 18, a terminal UF 17, a first-level EDI device 5 and a second-level EDI device 7 leading to the concentrate tank 18, the concentrate tank 18 leads to a concentrate lift pump 19, the concentrate lift pump 19 leads to a high-pressure pump 20, the high-pressure pump 20 leads to a reverse osmosis system 21, and the reverse osmosis system 21 leads to the raw water tank 1.

[0074] In this embodiment, the brine from the terminal UF17 and the two-stage EDI unit is recovered to a brine tank 18. Brine is then fed to a safety filter by a brine lift pump 19. After passing through the safety filter, it is pumped by a high-pressure pump 20 into a reverse osmosis system 21. Reverse osmosis system 21 utilizes a brackish water membrane with a high desalination rate, achieving a recovery rate of 70% and a product conductivity of ≤5 μs / cm. This brine is then recovered to a raw water tank 1 and discharged to a wastewater station. The brine recovery system allows the already high-quality brine from the terminal UF17 and the two-stage EDI unit to be processed through a reverse osmosis membrane and then recycled to the raw water tank 1, reducing the system's water intake and saving raw water costs.

[0075] It should be noted that the above embodiments are only used to illustrate the technical solutions of the present invention and are not intended to limit the present invention. Although the present invention has been described in detail with reference to the preferred embodiments, those skilled in the art should understand that the technical solutions of the present invention may be modified or replaced by equivalents without departing from the spirit and scope of the technical solutions of the present invention, and all of these should be included in the scope of the claims of the present invention.

Claims

1. A high recovery rate preparation system for ultrapure water for the semiconductor industry, characterized in that: include: Raw water tank (1), A primary TOC removal system (3), wherein the raw water tank (1) leads to the primary TOC removal system (3). a primary degassing system (4), the primary TOC removal system (3) leads to the primary degassing system (4), a primary EDI device (5), the primary degassing system (4) leading to the primary EDI device (5) for preliminary desalination, an alkali adding system (501), the alkali adding system (501) leading to the primary EDI device (5), a secondary EDI device (7), the primary EDI device (5) leading to the secondary EDI device (7), an ultrapure water tank (8), the secondary EDI device (7) leads to the ultrapure water tank (8), A secondary TOC removal system (11), wherein the ultrapure water tank (8) leads to the secondary TOC removal system (11). a tertiary polishing system (12), the secondary TOC removal system (11) leading to the tertiary polishing system (12), a secondary degassing system (15), the tertiary polishing system (12) leading to the secondary degassing system (15), Terminal UF (17), to which the secondary degassing system (15) leads.

2. The high recovery rate preparation system for ultrapure water for the semiconductor industry according to claim 1, characterized in that: Also includes: A raw water pump (2), wherein the raw water pump (2) is used to pump the raw water (2) in the raw water tank (1) into the primary TOC removal system (3), EDI booster pump (6), the first-level EDI device (5) leads to the EDI booster pump (6), the EDI booster pump (6) leads to the second-level EDI device (7), A terminal delivery pump (9), the ultrapure water tank (8) leads to the terminal delivery pump (9), and the terminal delivery pump (9) is used to deliver the water in the ultrapure water tank (8) to the secondary TOC removal system (11). A terminal booster pump (16), the secondary degassing system (15) leads to the terminal booster pump (16), and the terminal booster pump (16) is used for boosting pressure to ensure stable water pressure at the point of use.

3. The high recovery rate preparation system for ultrapure water for the semiconductor industry according to claim 1, characterized in that: The raw water tank (1) is a secondary reverse osmosis water production tank.

4. A high recovery rate preparation system for ultrapure water for the semiconductor industry according to claim 2, characterized in that, The raw water pump (2) is a two-stage reverse osmosis water production boost pump.

5. The high recovery rate preparation system for ultrapure water for the semiconductor industry according to claim 1, characterized in that: The secondary degassing system (15) is a degassing membrane system.

6. The high recovery rate preparation system for ultrapure water for the semiconductor industry according to claim 1, characterized in that: The primary TOC removal system (3) and the secondary TOC removal system (11) are both TOC-UV removers.

7. The high recovery rate preparation system for ultrapure water for the semiconductor industry according to claim 1, characterized in that: The alkali dosing system (501) is a NaOH dosing system.

8. The high recovery rate preparation system for ultrapure water for the semiconductor industry according to claim 1, characterized in that: The primary EDI device (5) and the secondary EDI device (7) are two-stage series-connected environmentally friendly desalination devices that do not require acid or alkali regeneration.

9. The high recovery rate preparation system for ultrapure water for the semiconductor industry according to claim 2, characterized in that: Also includes The terminal heat exchanger (10) is connected to the terminal delivery pump (9), and the terminal heat exchanger (10) is connected to the secondary TOC removal system (11). The terminal heat exchanger (10) is a plate heat exchanger.

10. The high recovery rate preparation system for ultrapure water for the semiconductor industry according to claim 1, characterized in that: Also includes Concentrated water tank (18), the terminal UF (17), the primary EDI device (5) and the secondary EDI device (7) are connected to the concentrated water tank (18), Concentrated water lift pump (19), the concentrated water tank (18) leads to the concentrated water lift pump (19), A high-pressure pump (20), the concentrated water lift pump (19) leads to the high-pressure pump (20), A reverse osmosis system (21), wherein the high-pressure pump (20) leads to the reverse osmosis system (21), and the reverse osmosis system (21) leads to the raw water tank (1).

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