Temperature sampling circuit, control system and scooter

Abstract

The utility model provides a temperature sampling circuit, a control system and a scooter, and belongs to the technical field of electronic circuits. The temperature sampling circuit comprises a power supply; one end of the voltage dividing device is electrically connected to the power supply; the semiconductor temperature control device is connected in series between the other end of the voltage division device and the grounding end, and comprises a first type semiconductor layer and a second type semiconductor layer; the leakage current between the first type semiconductor layer and the second type semiconductor layer changes along with the temperature; wherein the voltage sampling port is electrically connected to a common end of the semiconductor temperature control device and the voltage dividing device. According to the temperature sampling circuit, the control system and the scooter provided by the utility model, the sensitivity and the accuracy of temperature sampling can be improved.

Description

Technical Field

[0001] The utility model belongs to the technical field of electronic circuits, and in particular relates to a temperature sampling circuit, a control system and a scooter. Background Art

[0002] Temperature sampling circuits are typically formed using thermistors. Thermistors are made from materials such as single crystal, polycrystalline, glass, and plastic. Their resistance changes with temperature. When a thermistor is placed in a temperature sampling circuit, the change in resistance with temperature causes a shift in current and voltage within the circuit. Consequently, temperature can be sampled by sampling current or voltage.

[0003] However, temperature sampling circuits using thermistors have a long response time and low accuracy. Specifically, the response time can be as long as tens of milliseconds, and the accuracy can only reach ±1°C, which cannot meet the requirements of some devices. Utility Model Content

[0004] The purpose of the utility model is to provide a temperature sampling circuit, a control system and a scooter, which can improve the problems of long response time and low accuracy of the temperature sampling circuit.

[0005] To achieve the above object, the present invention provides a temperature sampling circuit, which at least includes:

[0006] power supply;

[0007] A voltage divider device, one end of which is electrically connected to a power source; and

[0008] a semiconductor temperature control device, the semiconductor temperature control device being connected in series between the other end of the voltage divider and a ground terminal, the semiconductor temperature control device comprising a first type semiconductor layer and a second type semiconductor layer, and a leakage current between the first type semiconductor layer and the second type semiconductor layer varying with temperature;

[0009] Wherein, the voltage sampling port is electrically connected to the common end of the semiconductor temperature control device and the voltage divider device.

[0010] In one embodiment of the present invention, the voltage divider device includes a voltage divider resistor, one end of the voltage divider resistor is electrically connected to the power supply, and the other end of the voltage divider resistor is electrically connected to the semiconductor temperature control device.

[0011] In an embodiment of the present invention, at least one of the first-type semiconductor layers is electrically connected to the other end of the voltage divider device, and at least one of the second-type semiconductor layers is electrically connected to the ground end.

[0012] In one embodiment of the present invention, the semiconductor temperature control device includes a diode or a transistor.

[0013] In an embodiment of the present invention, the diode is a Schottky diode.

[0014] In one embodiment of the present invention, the semiconductor temperature control device includes a first diode, an anode of the first diode is electrically connected to the voltage divider device, and a cathode of the first diode is electrically connected to the ground terminal.

[0015] In one embodiment of the present invention, the semiconductor temperature control device includes:

[0016] a first diode, wherein an anode of the first diode is electrically connected to the voltage divider; and

[0017] A second diode, wherein an anode of the second diode is electrically connected to the anode of the first diode, and a cathode of the second diode is electrically connected to the ground end.

[0018] In one embodiment of the present invention, the semiconductor temperature control device includes a first transistor, which is an NPN transistor, and the emitter and base of the first transistor are electrically connected to the voltage divider device, and the collector of the first transistor is electrically connected to the ground terminal.

[0019] In one embodiment of the present invention, the semiconductor temperature control device includes:

[0020] a first transistor, wherein the emitter and the base of the first transistor are electrically connected to the voltage divider; and

[0021] a second triode, wherein the emitter and the base of the second triode are electrically connected to the collector of the first triode, and the collector of the second triode is electrically connected to the ground terminal;

[0022] Wherein, the first transistor and the second transistor are NPN transistors.

[0023] In one embodiment of the present invention, the semiconductor temperature control device includes a third transistor, which is a PNP transistor, and the collector and base of the third transistor are electrically connected to the voltage divider device, and the emitter of the third transistor is electrically connected to the ground terminal.

[0024] In one embodiment of the present invention, the semiconductor temperature control device includes:

[0025] a third triode, wherein the collector and the base of the third triode are electrically connected to the voltage divider; and

[0026] a fourth triode, wherein the collector and the base of the fourth triode are electrically connected to the emitter of the third triode, and the emitter of the fourth triode is electrically connected to the ground terminal;

[0027] Wherein, the third transistor and the fourth transistor are PNP transistors.

[0028] In an embodiment of the present invention, the temperature sampling circuit further includes a current limiting device, and the current limiting device is connected in series between the voltage divider device and the voltage sampling port.

[0029] In an embodiment of the present invention, the current limiting device includes a current limiting resistor, and the current limiting resistor is connected in series between the voltage divider device and the voltage sampling port.

[0030] In an embodiment of the present invention, the temperature sampling circuit further includes a filter device, and the filter device is connected in series between the voltage sampling port and the ground terminal.

[0031] In an embodiment of the present invention, the filter device includes a filter capacitor, and the filter capacitor is connected in series between the voltage sampling port and the ground terminal.

[0032] The present application also provides a control system, comprising:

[0033] Controller; and

[0034] The temperature sampling circuit as described in any one of the above items collects the temperature of the controller and inputs the collected voltage signal into the controller.

[0035] The present application also provides a scooter, comprising the control system as described above.

[0036] In summary, the present invention provides a temperature sampling circuit, a control system, and a scooter. The scooter is provided with a control system, and the control system is provided with a temperature sampling circuit. In the provided temperature sampling circuit, a semiconductor temperature control device is provided, and the semiconductor temperature control device includes a first type semiconductor layer and a second type semiconductor layer. The leakage current between the first type semiconductor layer and the second type semiconductor layer is sensitive to temperature, so that the temperature sampling circuit has a high accuracy, which can reach below 0.1°C. At the same time, the response time of the temperature sampling circuit is very short, and it can respond to temperature changes within 100uS. At the same time, the cost of the semiconductor temperature control device is low and has high economic benefits. BRIEF DESCRIPTION OF THE DRAWINGS

[0037] In order to more clearly illustrate the technical solutions of the embodiments of the present invention, the following briefly introduces the drawings required for describing the embodiments. Obviously, the drawings described below are only some embodiments of the present invention. For ordinary technicians in this field, other drawings can be obtained based on these drawings without creative work.

[0038] Figure 1 This is a structural block diagram of temperature sampling in an embodiment of the present application.

[0039] Figure 2 This is a structural diagram of a semiconductor temperature control device in one embodiment of the present application.

[0040] Figure 3 This is a structural diagram of another semiconductor temperature control device in one embodiment of the present application.

[0041] Figure 4 This is a structural diagram of another semiconductor temperature control device in an embodiment of the present application.

[0042] Figure 5 This is a circuit diagram of a semiconductor temperature control device in an embodiment of the present application, which is a diode.

[0043] Figure 6 This is a circuit diagram of a semiconductor temperature control device comprising two diodes in one embodiment of the present application.

[0044] Figure 7 This is a circuit diagram of an NPN transistor in which the semiconductor temperature control device in one embodiment of the present application is a transistor.

[0045] Figure 8 This is a circuit diagram of a semiconductor temperature control device in one embodiment of the present application, which is two NPN transistors.

[0046] Figure 9 This is a circuit diagram of a semiconductor temperature control device in an embodiment of the present application, which is a PNP transistor.

[0047] Figure 10 This is a circuit diagram of a semiconductor temperature control device in one embodiment of the present application, which is two PNP transistors.

[0048] Figure 11 This is a structural block diagram of temperature sampling in another embodiment of the present application.

[0049] Figure 12 This is a circuit diagram of another embodiment of the present application in which the semiconductor temperature control device is a diode.

[0050] Figure 13 This is a circuit diagram of another embodiment of the present application in which the semiconductor temperature control device is two diodes.

[0051] Figure 14 This is a circuit diagram of another embodiment of the present application in which the semiconductor temperature control device is an NPN transistor.

[0052] Figure 15 This is a circuit diagram of another embodiment of the present application in which the semiconductor temperature control device is two NPN transistors.

[0053] Figure 16 This is a circuit diagram of another embodiment of the present application in which the semiconductor temperature control device is a PNP transistor.

[0054] Figure 17 This is a circuit diagram of another embodiment of the present application in which the semiconductor temperature control device is two PNP transistors.

[0055] Figure 18 Schematic diagram of the structure of an electric scooter in one embodiment of the present application.

[0056] Description of labels:

[0057] 101. Voltage divider device; 102. Semiconductor temperature control device; 103. Current limiting device; 104. Filter device; 201. First type semiconductor layer; 202. Second type semiconductor layer. DETAILED DESCRIPTION

[0058] To facilitate understanding of the present application, a more comprehensive description of the present application will be provided below with reference to the accompanying drawings. The accompanying drawings illustrate preferred embodiments of the present application. However, the present application can be implemented in many different forms and is not limited to the embodiments described herein. Rather, these embodiments are provided to provide a more thorough and comprehensive understanding of the disclosure of the present application.

[0059] Unless otherwise defined, all technical and scientific terms used herein have the same meaning as those commonly understood by those skilled in the art to which this application pertains. The terms used herein in the specification of this application are only for the purpose of describing specific embodiments and are not intended to limit this application.

[0060] In the description of this utility model, it should be understood that the terms "center," "upper," "lower," "front," "back," "left," and "right" and the like, indicating positions or relationships, are based on the positions or relationships shown in the accompanying drawings and are intended solely to facilitate the description of this utility model and simplify the description. They are not intended to indicate or imply that the devices or components referred to must have a specific orientation, be constructed, or operate in a specific orientation. Therefore, they should not be construed as limitations on this utility model. Furthermore, the terms "first" and "second" are used for descriptive purposes only and should not be construed as indicating or implying relative importance.

[0061] The present application provides a temperature sampling circuit for sampling temperature. The temperature sampling circuit can be installed in any device requiring temperature sampling. In some embodiments, the temperature sampling circuit can be installed in a vehicle. In other embodiments, the temperature sampling circuit can be installed in any other device requiring temperature display or temperature warning.

[0062] See also Figure 1 As shown, in one embodiment of the present application, the temperature sampling circuit includes a power supply Vcc, a voltage divider 101 and a semiconductor temperature control device 102. One end of the voltage divider 101 is electrically connected to the power supply Vcc, and the semiconductor temperature control device 102 is connected in series between the other end of the voltage divider 101 and the ground terminal GND, and the common end of the voltage divider 101 and the semiconductor temperature control device 102 is the voltage sampling port Tc. Figures 2 to 4 As shown, the semiconductor temperature control device 102 in the present application includes a first-type semiconductor layer 201 and a second-type semiconductor layer 202. When the semiconductor temperature control device 102 and the voltage divider device 101 are connected in series between the power supply Vcc and the ground terminal GND, there is a leakage current between the first-type semiconductor layer 201 and the second-type semiconductor layer 202. And when other conditions remain unchanged and only the temperature of the semiconductor temperature control device 102 is changed, the leakage current between the first-type semiconductor layer 201 and the second-type semiconductor layer 202 changes with the temperature. At this time, the voltage at the common end of the voltage divider device 101 and the semiconductor temperature control device 102 will also change with the temperature. And because the leakage current between the first-type semiconductor layer 201 and the second-type semiconductor layer 202 responds very sensitively to temperature, the temperature sampling circuit has more accurate accuracy and faster response time.

[0063] See also Figure 1 As shown, in one embodiment of the present application, the power source Vcc is a voltage source, and the range of the voltage source can be set according to requirements. In this embodiment, the power source Vcc is, for example, a +5V voltage source.

[0064] See also Figures 1 to 4As shown, in one embodiment of the present application, one end of the voltage divider device 101 is electrically connected to the power supply Vcc, and the other end is electrically connected to the semiconductor temperature control device 102. The voltage divider device 101 can adjust the voltage of the voltage sampling port Tc. Specifically, since the semiconductor temperature control device 102 includes a first-type semiconductor layer 201 and a second-type semiconductor layer 202, the voltage of the semiconductor temperature control device 102 depends on the voltage applied to its two ends. In this embodiment, the voltage value of the semiconductor temperature control device 102 is equal to the difference between the voltage value of the power supply Vcc and the voltage value across the voltage divider device 101. Since the voltage divider device 101 is connected in series with the semiconductor temperature control device 102, the current of the voltage divider device 101 is equal to the leakage current of the semiconductor temperature control device 102. Therefore, when the leakage current of the semiconductor temperature control device 102 changes with temperature, the current of the voltage divider device 101 also changes with temperature. At the same time, the voltage across the voltage divider device 101 changes with temperature, which in turn causes the voltage of the voltage sampling port Tc to change.

[0065] See also Figure 1 ,as well as Figures 5 to 10 As shown, in one embodiment of the present application, the voltage divider device 101 includes a voltage divider resistor R101, which is connected in series between the power supply Vcc and the semiconductor temperature control device 102. The voltage divider resistor R101 can be a single resistor, or it can be implemented by connecting two or more resistors in series and / or in parallel. In particular, since the leakage current value of the semiconductor temperature control device 102 is small, in order to ensure that the voltage of the voltage sampling port Tc changes significantly with temperature, the voltage divider resistor R101 is set to a resistance in the kilo-ohm range. In this embodiment, the resistance value of the voltage divider resistor R101 is, for example, 2KΩ. In other embodiments, the resistance value of the voltage divider resistor R101 can also be 3KΩ, 3.5KΩ or 4KΩ, etc.

[0066] See also Figure 1 As shown, in one embodiment of the present application, one end of the semiconductor temperature control device 102 is electrically connected to the other end of the voltage divider device 101, and the other end of the semiconductor temperature control device 102 is electrically connected to the ground terminal GND, that is, the semiconductor temperature control device 102 is connected in series between the voltage divider device 101 and the ground terminal GND. Figures 2 to 4 As shown, in this embodiment, the semiconductor temperature control device 102 includes a first-type semiconductor layer 201 and a second-type semiconductor layer 202. At least one first-type semiconductor layer 201 is electrically connected to the other end of the voltage divider device 101, and at least one second-type semiconductor layer 202 is electrically connected to the ground terminal GND. When a forward voltage is applied across the first-type semiconductor layer 201 and the second-type semiconductor layer 202, a leakage current is generated between the first-type semiconductor layer 201 and the second-type semiconductor layer 202.

[0067] See also Figures 1 to 4 As shown, in one embodiment of the present application, the first type semiconductor layer 201 is a P-type semiconductor layer, the second type semiconductor layer 202 is an N-type semiconductor layer, and a PN junction is formed between the first type semiconductor layer 201 and the second type semiconductor layer 202. The first type semiconductor layer 201 is electrically connected to the other end of the voltage divider device 101, and the second type semiconductor layer 202 is electrically connected to the ground terminal GND. The PN junction between the first type semiconductor layer 201 and the second type semiconductor layer 202 is forward biased, and the leakage current between the first type semiconductor layer 201 and the second type semiconductor layer 202 varies with temperature. In some embodiments, the first type semiconductor layer 201 can be implemented by doping silicon crystals with trivalent elements, such as boron. The second type semiconductor layer 202 can be implemented by doping silicon crystals with pentavalent elements, such as phosphorus. In other embodiments, the first type semiconductor layer 201 can also be implemented by using a metal layer.

[0068] See also Figures 1 to 10 As shown, in one embodiment of the present application, the semiconductor temperature control device 102 is, for example, a transistor or a diode. The present application does not limit the number of transistors or diodes in each semiconductor temperature control device 102, and the number of transistors or diodes can be one or two. However, too many diodes or transistors are not provided to avoid excessive voltage drops across the diodes or transistors, which would result in unclear changes in the sampled voltage. In the present application, the diode is a Schottky diode, which is resistant to high temperatures and has high efficiency.

[0069] See also Figure 1 and Figure 2 As shown, in one embodiment of the present application, when the semiconductor temperature control device 102 is a diode, the diode includes a first-type semiconductor layer 201 and a second-type semiconductor layer 202. The anode of the diode is electrically connected to the other end of the voltage divider device 101, and the cathode of the diode is electrically connected to the ground terminal GND.

[0070] See also Figure 1 and Figure 3 As shown, in one embodiment of the present application, when the semiconductor temperature control device 102 is an NPN transistor, the NPN transistor includes two first-type semiconductor layers 201 and one second-type semiconductor layer 202. The emitter and base of the NPN transistor are electrically connected to the other end of the voltage divider device 101, and the collector of the NPN transistor is electrically connected to the ground terminal GND.

[0071] See also Figure 1 and Figure 4As shown, in one embodiment of the present application, when the semiconductor temperature control device 102 is a PNP transistor, the NPN transistor includes a first-type semiconductor layer 201 and two second-type semiconductor layers 202. The collector and base of the PNP transistor are electrically connected to the other end of the voltage divider device 101, and the emitter of the NPN transistor is electrically connected to the ground terminal GND.

[0072] See also Figure 1 and Figure 5 As shown, in one embodiment of the application, the voltage divider device 101 is a voltage divider resistor R101, and the semiconductor temperature control device 102 includes a first diode D101. The temperature sampling circuit then includes a power supply Vcc, a voltage divider resistor R101, and the first diode D101. One end of the voltage divider resistor R101 is electrically connected to the power supply Vcc. The anode of the first diode D101 is electrically connected to the other end of the voltage divider resistor R101, and the cathode of the first diode D101 is electrically connected to the ground terminal GND, that is, the first diode D101 is connected in series between the voltage divider resistor R101 and the ground terminal GND. The voltage sampling port Tc is provided at the common end of the voltage divider resistor R101 and the first diode D101. If the temperature of the first diode D101 increases, the electron activity between the anode and cathode of the first diode D101 increases, and the leakage current between the anode and cathode of the first diode D101 increases, which in turn increases the current in the voltage divider resistor R101, increases the voltage across the voltage divider resistor R101, decreases the voltage across the first diode D101, and also decreases the voltage at the voltage sampling port Tc. If the temperature of the first diode D101 decreases, the electron activity between the anode and cathode of the first diode D101 decreases, and the leakage current between the anode and cathode of the first diode D101 decreases, which in turn decreases the current in the voltage divider resistor R101, decreases the voltage across the voltage divider resistor R101, increases the voltage across the first diode D101, and also increases the voltage at the voltage sampling port Tc.

[0073] See also Figure 1 and Figure 6As shown, in one embodiment of the application, the voltage divider device 101 is a voltage divider resistor R101, and the semiconductor temperature control device 102 includes a first diode D101 and a second diode D102. The temperature sampling circuit then includes a power supply Vcc, a voltage divider resistor R101, a first diode D101, and a second diode D102. One end of the voltage divider resistor R101 is electrically connected to the power supply Vcc. The anode of the first diode D101 is electrically connected to the other end of the voltage divider resistor R101, the cathode of the first diode D101 is electrically connected to the anode of the second diode D102, and the cathode of the second diode D102 is electrically connected to the ground terminal GND, that is, the first diode D101 and the second diode D102 are connected in series between the voltage divider resistor R101 and the ground terminal GND. The voltage sampling port Tc is set at the common end of the voltage divider resistor R101 and the first diode D101. If the temperature of the first diode D101 and the second diode D102 increases, the electron activity between the anode and cathode of the first diode D101 and the second diode D102 increases, increasing the leakage current between the anode and cathode of the first diode D101 and the anode and cathode of the second diode D102. This in turn increases the current in the voltage divider resistor R101, increasing the voltage across the voltage divider resistor R101, decreasing the voltage across the first diode D101 and the second diode D102, and also decreasing the voltage at the voltage sampling port Tc. If the temperature of the first diode D101 and the second diode D102 decreases, the electron activity between the anode and cathode of the first diode D101 and the second diode D102 decreases, decreasing the leakage current between the anode and cathode of the first diode D101 and the anode and cathode of the second diode D102. This in turn decreases the current in the voltage divider resistor R101, decreasing the voltage across the voltage divider resistor R101, increasing the voltage across the first diode D101 and the second diode D102, and also increasing the voltage at the voltage sampling port Tc.

[0074] See also Figure 1 and Figure 7 As shown, in one embodiment of the application, the voltage divider device 101 is a voltage divider resistor R101, and the semiconductor temperature control device 102 includes a first transistor Q101, and the first transistor Q101 is an NPN transistor. The temperature sampling circuit then includes a power supply Vcc, a voltage divider resistor R101, and the first transistor Q101. One end of the voltage divider resistor R101 is electrically connected to the power supply Vcc. The emitter and base of the first transistor Q101 are electrically connected to the other end of the voltage divider device 101, and the collector of the first transistor Q101 is electrically connected to the ground terminal GND. The voltage sampling port Tc is provided at the common end of the voltage divider resistor R101 and the first transistor Q101. In this case, the emitter and base of the first transistor Q101 are connected, and the first transistor Q101 is used as a diode.

[0075] See also Figure 1 and Figure 8 As shown, in one embodiment of the application, the voltage divider device 101 is a voltage divider resistor R101, and the semiconductor temperature control device 102 includes a first transistor Q101 and a second transistor Q102, and the first transistor Q101 and the second transistor Q102 are NPN transistors. The temperature sampling circuit then includes a power supply Vcc, a voltage divider resistor R101, the first transistor Q101, and the second transistor Q102. One end of the voltage divider resistor R101 is electrically connected to the power supply Vcc. The emitter and base of the first transistor Q101 are electrically connected to the other end of the voltage divider device 101, and the emitter and base of the second transistor Q102 are electrically connected to the collector of the first transistor Q101, and the collector of the second transistor Q102 is electrically connected to the ground terminal GND. The voltage sampling port Tc is provided at the common end of the voltage divider resistor R101 and the first transistor Q101. At this time, the emitter and base of the first transistor Q101 are connected, and the emitter and base of the second transistor Q102 are connected, so that the first transistor Q101 and the second transistor Q102 are used as diodes.

[0076] See also Figure 1 and Figure 9 As shown, in one embodiment of the application, the voltage divider device 101 is a voltage divider resistor R101, and the semiconductor temperature control device 102 includes a third transistor Q103, and the third transistor Q103 is a PNP transistor. The temperature sampling circuit then includes a power supply Vcc, a voltage divider resistor R101, and the third transistor Q103. One end of the voltage divider resistor R101 is electrically connected to the power supply Vcc. The collector and base of the third transistor Q103 are electrically connected to the other end of the voltage divider device 101, and the emitter of the third transistor Q103 is electrically connected to the ground terminal GND. The voltage sampling port Tc is provided at the common end of the voltage divider resistor R101 and the third transistor Q103. In this case, the collector and base of the third transistor Q103 are connected, and the third transistor Q103 is used as a diode.

[0077] See also Figure 1 and Figure 10As shown, in one embodiment of the application, the voltage divider device 101 is a voltage divider resistor R101, and the semiconductor temperature control device 102 includes a third transistor Q103 and a fourth transistor Q104, and the third transistor Q103 and the fourth transistor Q104 are PNP transistors. The temperature sampling circuit then includes a power supply Vcc, a voltage divider resistor R101, a third transistor Q103, and a fourth transistor Q104. One end of the voltage divider resistor R101 is electrically connected to the power supply Vcc. The collector and base of the third transistor Q103 are electrically connected to the other end of the voltage divider device 101, and the collector and base of the fourth transistor Q104 are electrically connected to the emitter of the third transistor Q103. The emitter of the fourth transistor Q104 is electrically connected to the ground terminal GND. The voltage sampling port Tc is provided at the common end of the voltage divider resistor R101 and the third transistor Q103. At this time, the collector and base of the third transistor Q103 are connected, and the collector and base of the fourth transistor Q104 are connected, so that the third transistor Q103 and the fourth transistor Q104 are used as diodes.

[0078] See also Figure 11 As shown, in another embodiment of the present application, the temperature sampling circuit includes a power supply Vcc, a voltage divider 101, a semiconductor temperature control device 102, a current limiting device 103 and a filter device 104. One end of the voltage divider 101 is electrically connected to the power supply Vcc, the semiconductor temperature control device 102 is connected in series between the other end of the voltage divider 101 and the ground terminal GND, and the common end of the voltage divider 101 and the semiconductor temperature control device 102 is electrically connected to the voltage sampling port Tc. In this embodiment, a current limiting device 103 and a filter device 104 are provided between the common end of the voltage divider 101 and the semiconductor temperature control device 102 and the voltage sampling port Tc. One end of the current limiting device 103 is electrically connected to the common end of the voltage divider 101 and the semiconductor temperature control device 102, and the other end is electrically connected to the voltage sampling port Tc, that is, the current limiting device 103 is connected in series between the common end of the voltage divider 101 and the semiconductor temperature control device 102 and the voltage sampling port Tc. One end of the filter device 104 is electrically connected to the voltage sampling port Tc, and the other end is electrically connected to the ground terminal GND. That is, the filter device 104 is connected in series between the voltage sampling port Tc and the ground terminal GND.

[0079] See also Figure 11As shown, in another embodiment of the present application, the semiconductor temperature control device 102 in the present application includes a first-type semiconductor layer 201 and a second-type semiconductor layer 202. When the semiconductor temperature control device 102 and the voltage divider device 101 are connected in series between the power supply Vcc and the ground terminal GND, there is a leakage current between the first-type semiconductor layer 201 and the second-type semiconductor layer 202. And when other conditions remain unchanged and only the temperature of the semiconductor temperature control device 102 is changed, the leakage current between the first-type semiconductor layer 201 and the second-type semiconductor layer 202 changes with the temperature. At this time, the voltage at the common end of the voltage divider device 101 and the semiconductor temperature control device 102 will also change with the temperature. And because the leakage current between the first-type semiconductor layer 201 and the second-type semiconductor layer 202 responds very sensitively to temperature, the temperature sampling circuit has more accurate accuracy and faster response time.

[0080] See also Figure 11 As shown, in another embodiment of the present application, the power source Vcc is a voltage source, and the range of the voltage source can be set according to requirements. In this embodiment, the power source Vcc is, for example, a +5V voltage source.

[0081] See also Figure 11 as well as Figures 2 to 4 As shown, in another embodiment of the present application, one end of the voltage divider device 101 is electrically connected to the power supply Vcc, and the other end is electrically connected to the semiconductor temperature control device 102. The voltage divider device 101 can adjust the voltage of the voltage sampling port Tc. Specifically, because the semiconductor temperature control device 102 includes a first-type semiconductor layer 201 and a second-type semiconductor layer 202, the voltage of the semiconductor temperature control device 102 depends on the voltage applied to its two terminals. In this embodiment, the voltage value of the semiconductor temperature control device 102 is equal to the difference between the voltage value of the power supply Vcc and the voltage value across the voltage divider device 101. Since the voltage divider device 101 is connected in series with the semiconductor temperature control device 102, the current of the voltage divider device 101 is equal to the leakage current of the semiconductor temperature control device 102. Therefore, when the leakage current of the semiconductor temperature control device 102 changes with temperature, the current of the voltage divider device 101 also changes with temperature. At the same time, the voltage across the voltage divider device 101 changes with temperature, and then the voltage at the common end of the voltage divider device 101 and the semiconductor temperature control device 102 changes, which causes the voltage of the voltage sampling port Tc to change.

[0082] See also Figures 11 to 17As shown, in another embodiment of the present application, the voltage divider device 101 includes a voltage divider resistor R101, which is connected in series between the power supply Vcc and the semiconductor temperature control device 102. The voltage divider resistor R101 can be a single resistor, or it can be implemented by connecting two or more resistors in series and / or in parallel. In particular, since the leakage current value of the semiconductor temperature control device 102 is small, in order to ensure that the voltage of the voltage sampling port Tc changes significantly with temperature, the voltage divider resistor R101 is set to a resistance in the kilo-ohm range. In this embodiment, the resistance value of the voltage divider resistor R101 is, for example, 2KΩ. In other embodiments, the resistance value of the voltage divider resistor R101 can also be 3KΩ, 3.5KΩ or 4KΩ, etc.

[0083] See also Figure 11 As shown, in another embodiment of the present application, one end of the semiconductor temperature control device 102 is electrically connected to the other end of the voltage divider device 101, and the other end of the semiconductor temperature control device 102 is electrically connected to the ground terminal GND, that is, the semiconductor temperature control device 102 is connected in series between the voltage divider device 101 and the ground terminal GND. Figures 2 to 4 As shown, in this embodiment, the semiconductor temperature control device 102 includes a first-type semiconductor layer 201 and a second-type semiconductor layer 202. At least one first-type semiconductor layer 201 is electrically connected to the other end of the voltage divider device 101, and at least one second-type semiconductor layer 202 is electrically connected to the ground terminal GND. When a forward voltage is applied across the first-type semiconductor layer 201 and the second-type semiconductor layer 202, a leakage current is generated between the first-type semiconductor layer 201 and the second-type semiconductor layer 202.

[0084] See also Figure 11 、 Figures 2 to 4 As shown, in another embodiment of the present application, the first type semiconductor layer 201 is a P-type semiconductor layer, the second type semiconductor layer 202 is an N-type semiconductor layer, and a PN junction is formed between the first type semiconductor layer 201 and the second type semiconductor layer 202. When the first type semiconductor layer 201 is electrically connected to the other end of the voltage divider device 101 and the second type semiconductor layer 202 is electrically connected to the ground terminal GND, the PN junction between the first type semiconductor layer 201 and the second type semiconductor layer 202 is forward biased, and the leakage current between the first type semiconductor layer 201 and the second type semiconductor layer 202 varies with temperature. In some embodiments, the first type semiconductor layer 201 can be implemented by doping silicon crystals with trivalent elements, such as boron. The second type semiconductor layer 202 can be implemented by doping silicon crystals with pentavalent elements, such as phosphorus. In other embodiments, the first type semiconductor layer 201 can also be implemented by using a metal layer.

[0085] See also Figures 11 to 17As shown, in another embodiment of the present application, the semiconductor temperature control device 102 is, for example, a transistor or a diode. The present application does not limit the number of transistors or diodes in each semiconductor temperature control device 102. The number of transistors or diodes can be one or two. However, too many diodes or transistors are not provided to avoid excessive voltage drops across the diodes or transistors, which would result in unclear changes in the sampled voltage. In the present application, the diode is a Schottky diode, which is resistant to high temperatures and has high efficiency.

[0086] See also Figure 11 and Figure 2 As shown, in another embodiment of the present application, when the semiconductor temperature control device 102 is a diode, the diode includes a first-type semiconductor layer 201 and a second-type semiconductor layer 202. The anode of the diode is electrically connected to the other end of the voltage divider device 101, and the cathode of the diode is electrically connected to the ground terminal GND.

[0087] See also Figure 11 and Figure 3 As shown, in another embodiment of the present application, when the semiconductor temperature control device 102 is an NPN transistor, the NPN transistor includes two first-type semiconductor layers 201 and one second-type semiconductor layer 202. The emitter and base of the NPN transistor are electrically connected to the other end of the voltage divider device 101, and the collector of the NPN transistor is electrically connected to the ground terminal GND.

[0088] See also Figure 11 and Figure 4 As shown, in another embodiment of the present application, when the semiconductor temperature control device 102 is a PNP transistor, the NPN transistor includes a first-type semiconductor layer 201 and two second-type semiconductor layers 202. The collector and base of the PNP transistor are electrically connected to the other end of the voltage divider device 101, and the emitter of the NPN transistor is electrically connected to the ground terminal GND.

[0089] See also Figure 11 As shown, in another embodiment of the present application, one end of the current limiting device 103 is electrically connected to the common end of the voltage divider device 101 and the semiconductor temperature control device 102, and the other end of the current limiting device 103 is electrically connected to the voltage sampling port Tc. The sampled voltage output by the voltage sampling port Tc is input to the controller, which performs logical processing to obtain the temperature corresponding to the sampled voltage as the sampled temperature of the voltage sampling circuit. To ensure that the signal input to the controller does not damage the controller, a current limiting device 103 is set between the common end of the voltage divider device 101 and the semiconductor temperature control device 102 and the voltage sampling port Tc to control the current of the signal input to the controller.

[0090] See also Figures 11 to 17As shown, in another embodiment of the present application, the current limiting device 103 includes a current limiting resistor R102, which is connected in series between the common terminal of the voltage divider device 101 and the semiconductor temperature control device 102 and the voltage sampling port Tc. The current limiting resistor R102 can be a single resistor, or it can be implemented by two or more resistors connected in series and / or in parallel. In this embodiment, the resistance of the current limiting resistor R102 is, for example, 10KΩ.

[0091] See also Figure 11 As shown, in another embodiment of the present application, one end of the filter device 104 is electrically connected to the voltage sampling port Tc, and the other end of the filter device 104 is electrically connected to the ground terminal GND to filter the signal input to the controller.

[0092] See also Figures 11 to 17 As shown, in another embodiment of the present application, the filter device 104 includes a filter capacitor C101, which is connected in series between the voltage sampling port Tc and the ground terminal GND. The filter capacitor C101 can be a single capacitor, or two or more capacitors can be connected in series and / or in parallel. In this embodiment, the capacitance of the filter capacitor C101 is, for example, 100nF.

[0093] See also Figure 11 and Figure 12As shown, in one embodiment of the application, the voltage divider device 101 is a voltage divider resistor R101, the semiconductor temperature control device 102 includes a first diode D101, the current limiting device 103 includes a current limiting resistor R102, and the filter device 104 includes a filter capacitor C101. The temperature sampling circuit then includes a power supply Vcc, a voltage divider resistor R101, a first diode D101, a current limiting resistor R102, and a filter capacitor C101. One end of the voltage divider resistor R101 is electrically connected to the power supply Vcc. The anode of the first diode D101 is electrically connected to the other end of the voltage divider resistor R101, and the cathode of the first diode D101 is electrically connected to the ground terminal GND, that is, the first diode D101 is connected in series between the voltage divider resistor R101 and the ground terminal GND. One end of the current limiting resistor R102 is electrically connected to the common end of the voltage divider resistor R101 and the first diode D101, and the other end of the current limiting resistor R102 is electrically connected to the voltage sampling port Tc. One end of the filter capacitor C101 is electrically connected to the voltage sampling port Tc, and the other end of the filter capacitor C101 is electrically connected to the ground port GND. If the temperature of the first diode D101 increases, the electron activity between the anode and cathode of the first diode D101 increases, and the leakage current between the anode and cathode of the first diode D101 increases, thereby increasing the current in the voltage divider resistor R101, increasing the voltage across the voltage divider resistor R101, decreasing the voltage across the first diode D101, and also decreasing the voltage at the voltage sampling port Tc. If the temperature of the first diode D101 decreases, the electron activity between the anode and cathode of the first diode D101 decreases, decreasing the leakage current between the anode and cathode of the first diode D101, thereby decreasing the current in the voltage divider resistor R101, decreasing the voltage across the voltage divider resistor R101, increasing the voltage across the first diode D101, and also increasing the voltage at the voltage sampling port Tc.

[0094] See also Figure 11 and Figure 13As shown, in one embodiment of the application, the voltage divider device 101 is a voltage divider resistor R101, the semiconductor temperature control device 102 includes a first diode D101 and a second diode D102, the current limiting device 103 includes a current limiting resistor R102, and the filter device 104 includes a filter capacitor C101. The temperature sampling circuit then includes a power supply Vcc, a voltage divider resistor R101, a first diode D101, a second diode D102, a current limiting resistor R102, and a filter capacitor C101. One end of the voltage divider resistor R101 is electrically connected to the power supply Vcc. The anode of the first diode D101 is electrically connected to the other end of the voltage divider resistor R101, the cathode of the first diode D101 is electrically connected to the anode of the second diode D102, and the cathode of the second diode D102 is electrically connected to the ground terminal GND, that is, the first diode D101 and the second diode D102 are connected in series between the voltage divider resistor R101 and the ground terminal GND. One end of the current-limiting resistor R102 is electrically connected to the common end of the voltage-dividing resistor R101 and the first diode D101, and the other end of the current-limiting resistor R102 is electrically connected to the voltage sampling port Tc. One end of the filter capacitor C101 is electrically connected to the voltage sampling port Tc, and the other end of the filter capacitor C101 is electrically connected to the ground terminal GND. If the temperature of the first diode D101 and the second diode D102 increases, the electron activity between the anode and cathode of the first diode D101 and the second diode D102 increases, and the leakage current between the anode and cathode of the first diode D101 and the anode and cathode of the second diode D102 increase. This in turn increases the current in the voltage-dividing resistor R101, increases the voltage across the voltage-dividing resistor R101, decreases the voltage across the first diode D101 and the second diode D102, and also decreases the voltage at the voltage sampling port Tc. If the temperature of the first diode D101 and the second diode D102 decreases, the electron activity between the anode and the cathode of the first diode D101 and the second diode D102 decreases, and the leakage current between the anode and the cathode of the first diode D101 and the leakage current between the anode and the cathode of the second diode D102 decreases, thereby reducing the current of the voltage divider resistor R101 and the voltage across the voltage divider resistor R101. The voltage across the first diode D101 and the second diode D102 increases, and the voltage at the voltage sampling port Tc also increases.

[0095] See also Figure 11 and Figure 14As shown, in one embodiment of the application, the voltage divider device 101 is a voltage divider resistor R101, the semiconductor temperature control device 102 includes a first transistor Q101, and the first transistor Q101 is an NPN transistor. The current limiting device 103 includes a current limiting resistor R102, and the filter device 104 includes a filter capacitor C101. The temperature sampling circuit then includes a power supply Vcc, a voltage divider resistor R101, the first transistor Q101, the current limiting resistor R102, and the filter capacitor C101. One end of the voltage divider resistor R101 is electrically connected to the power supply Vcc. The emitter and base of the first transistor Q101 are electrically connected to the other end of the voltage divider device 101, and the collector of the first transistor Q101 is electrically connected to the ground terminal GND. One end of the current limiting resistor R102 is electrically connected to the common terminal of the voltage divider resistor R101 and the first transistor Q101, and the other end of the current limiting resistor R102 is electrically connected to the voltage sampling port Tc. One end of the filter capacitor C101 is electrically connected to the voltage sampling port Tc, and the other end of the filter capacitor C101 is electrically connected to the ground terminal GND. At this time, the emitter and base of the first transistor Q101 are connected, and the first transistor Q101 is used as a diode.

[0096] See also Figure 11 and Figure 15 As shown, in one embodiment of the application, the voltage divider device 101 is a voltage divider resistor R101, the semiconductor temperature control device 102 includes a first transistor Q101 and a second transistor Q102, and the first transistor Q101 and the second transistor Q102 are NPN transistors. The current limiting device 103 includes a current limiting resistor R102, and the filter device 104 includes a filter capacitor C101. The temperature sampling circuit then includes a power supply Vcc, a voltage divider resistor R101, a first transistor Q101, a second transistor Q102, a current limiting resistor R102, and a filter capacitor C101. One end of the voltage divider resistor R101 is electrically connected to the power supply Vcc. The emitter and base of the first transistor Q101 are electrically connected to the other end of the voltage divider device 101, the emitter and base of the second transistor Q102 are electrically connected to the collector of the first transistor Q101, and the collector of the second transistor Q102 is electrically connected to the ground terminal GND. One end of the current-limiting resistor R102 is electrically connected to the common terminal of the voltage-dividing resistor R101 and the first transistor Q101, and the other end of the current-limiting resistor R102 is electrically connected to the voltage sampling port Tc. One end of the filter capacitor C101 is electrically connected to the voltage sampling port Tc, and the other end of the filter capacitor C101 is electrically connected to the ground terminal GND. At this time, the emitter and base of the first transistor Q101 are connected, and the emitter and base of the second transistor Q102 are connected, so that the first transistor Q101 and the second transistor Q102 function as diodes.

[0097] See also Figure 11 and Figure 16As shown, in one embodiment of the application, the voltage divider device 101 is a voltage divider resistor R101, the semiconductor temperature control device 102 includes a third transistor Q103, and the third transistor Q103 is a PNP transistor. The current limiting device 103 includes a current limiting resistor R102, and the filter device 104 includes a filter capacitor C101. The temperature sampling circuit then includes a power supply Vcc, a voltage divider resistor R101, the third transistor Q103, a current limiting resistor R102, and a filter capacitor C101. One end of the voltage divider resistor R101 is electrically connected to the power supply Vcc. The collector and base of the third transistor Q103 are electrically connected to the other end of the voltage divider device 101, and the emitter of the third transistor Q103 is electrically connected to the ground terminal GND. One end of the current limiting resistor R102 is electrically connected to the common terminal of the voltage divider resistor R101 and the third transistor Q103, and the other end of the current limiting resistor R102 is electrically connected to the voltage sampling port Tc. One end of the filter capacitor C101 is electrically connected to the voltage sampling port Tc, and the other end of the filter capacitor C101 is electrically connected to the ground terminal GND. At this time, the collector and base of the third transistor Q103 are connected, and the third transistor Q103 is used as a diode.

[0098] See also Figure 11 and Figure 17 As shown, in one embodiment of the application, the voltage divider device 101 is a voltage divider resistor R101, the semiconductor temperature control device 102 includes a third transistor Q103 and a fourth transistor Q104, and the third transistor Q103 and the fourth transistor Q104 are PNP transistors, the current limiting device 103 includes a current limiting resistor R102, and the filter device 104 includes a filter capacitor C101. The temperature sampling circuit then includes a power supply Vcc, a voltage divider resistor R101, a third transistor Q103, a fourth transistor Q104, a current limiting resistor R102, and a filter capacitor C101. One end of the voltage divider resistor R101 is electrically connected to the power supply Vcc. The collector and base of the third transistor Q103 are electrically connected to the other end of the voltage divider device 101. The collector and base of the fourth transistor Q104 are electrically connected to the emitter of the third transistor Q103, and the emitter of the fourth transistor Q104 is electrically connected to the ground terminal GND. One end of the current-limiting resistor R102 is electrically connected to the common terminal of the voltage divider resistor R101 and the third transistor Q103, and the other end of the current-limiting resistor R102 is electrically connected to the voltage sampling port Tc. One end of the filter capacitor C101 is electrically connected to the voltage sampling port Tc, and the other end of the filter capacitor C101 is electrically connected to the ground terminal GND. At this time, the collector and base of the third transistor Q103 are connected, and the collector and base of the fourth transistor Q104 are connected, so that the third transistor Q103 and the fourth transistor Q104 function as diodes.

[0099] See also Figures 1 to 17As shown, in the present application, when the semiconductor temperature control device 102 includes a first-type semiconductor layer 201 and a second-type semiconductor layer 202, if the temperature of the semiconductor temperature control device 102 increases, the electron activity between the first-type semiconductor layer 201 and the second-type semiconductor layer 202 increases, and the leakage current between the first-type semiconductor layer 201 and the second-type semiconductor layer 202 increases, thereby increasing the current of the voltage divider device 101, increasing the voltage across the voltage divider device 101, decreasing the voltage across the semiconductor temperature control device 102, and also decreasing the voltage at the voltage sampling port Tc. If the temperature of the semiconductor temperature control device 102 decreases, the electron activity between the first-type semiconductor layer 201 and the second-type semiconductor layer 202 decreases, and the leakage current between the first-type semiconductor layer 201 and the second-type semiconductor layer 202 decreases, thereby decreasing the current of the voltage divider device 101, decreasing the voltage across the voltage divider device 101, increasing the voltage across the semiconductor temperature control device 102, and also increasing the voltage at the voltage sampling port Tc.

[0100] Specifically, in one embodiment of the present application, the following is used: Figure 15 The temperature sampling circuit shown is used for sampling. The temperature sampling circuit is placed in the temperature box. The temperature of the transistor body, the voltage at the temperature measuring point (the voltage at the voltage sampling port Tc), and the read temperature obtained based on the voltage at the temperature measuring point are shown in Table 1.

[0101] Table 1 Transistor temperature measurement related data table

[0102]

[0103] As shown in Table 1, when the semiconductor temperature control device 102 is used for temperature sampling, since the leakage current between the first type semiconductor layer 201 and the second type semiconductor layer 202 in the semiconductor temperature control device 102 is highly sensitive to temperature, the response time of the temperature sampling can reach 100uS, and the temperature sampling accuracy can reach ±0.1°C.

[0104] See also Figure 18 As shown, the present application also provides a scooter, which is provided with a control system. The control system controls the scooter according to external instructions and internal logic. The control system includes a controller and a temperature sampling circuit provided in the present application. The temperature sampling circuit samples the temperature of the controller and inputs the sampled voltage signal into the controller. The controller performs logical processing on the voltage signal sampled by the temperature sampling circuit to obtain the temperature of the controller.

[0105] In summary, the present invention provides a temperature sampling circuit, a control system, and a scooter. The scooter is provided with a control system, and the control system is provided with a temperature sampling circuit. In the provided temperature sampling circuit, a semiconductor temperature control device is provided, and the semiconductor temperature control device includes a first type semiconductor layer and a second type semiconductor layer. The leakage current between the first type semiconductor layer and the second type semiconductor layer is sensitive to temperature, so that the temperature sampling circuit has a high accuracy, which can reach below 0.1°C. At the same time, the response time of the temperature sampling circuit is very short, and it can respond to temperature changes within 100uS. At the same time, the cost of the semiconductor temperature control device is low and has high economic benefits.

[0106] The embodiments of the present invention disclosed above are intended only to help illustrate the present invention. These embodiments do not exhaustively describe all details, nor do they limit the present invention to the specific embodiments described. Obviously, many modifications and variations are possible based on the contents of this specification. These embodiments are selected and described in detail in this specification to better explain the principles and practical applications of the present invention, thereby enabling those skilled in the art to better understand and utilize the present invention. The present invention is limited only by the claims and their full scope and equivalents.

Claims

1. A temperature sampling circuit, characterized in that: At least: power supply; A voltage divider device, one end of which is electrically connected to a power supply; as well as a semiconductor temperature control device, the semiconductor temperature control device being connected in series between the other end of the voltage divider and a ground terminal, the semiconductor temperature control device comprising a first type semiconductor layer and a second type semiconductor layer, and a leakage current between the first type semiconductor layer and the second type semiconductor layer varying with temperature; Wherein, the voltage sampling port is electrically connected to the common end of the semiconductor temperature control device and the voltage divider device.

2. A temperature sampling circuit according to claim 1, characterized in that: The voltage divider device includes a voltage divider resistor, one end of the voltage divider resistor is electrically connected to the power supply, and the other end of the voltage divider resistor is electrically connected to the semiconductor temperature control device.

3. A temperature sampling circuit according to claim 1, characterized in that: At least one of the first-type semiconductor layers is electrically connected to the other end of the voltage divider device, and at least one of the second-type semiconductor layers is electrically connected to the ground end.

4. The temperature sampling circuit according to claim 1, wherein: The semiconductor temperature control device includes a diode or a transistor.

5. A temperature sampling circuit according to claim 4, characterized in that: The diode is a Schottky diode.

6. The temperature sampling circuit according to claim 1, characterized in that: The semiconductor temperature control device includes a first diode, an anode of the first diode is electrically connected to the voltage divider device, and a cathode of the first diode is electrically connected to the ground terminal.

7. The temperature sampling circuit according to claim 1, characterized in that: The semiconductor temperature control device comprises: a first diode, wherein an anode of the first diode is electrically connected to the voltage divider; and A second diode, wherein an anode of the second diode is electrically connected to the anode of the first diode, and a cathode of the second diode is electrically connected to the ground end.

8. The temperature sampling circuit according to claim 1, characterized in that: The semiconductor temperature control device includes a first transistor, which is an NPN transistor. The emitter and base of the first transistor are electrically connected to the voltage divider device, and the collector of the first transistor is electrically connected to the ground terminal.

9. The temperature sampling circuit according to claim 1, characterized in that: The semiconductor temperature control device comprises: a first transistor, wherein the emitter and the base of the first transistor are electrically connected to the voltage divider; and a second triode, wherein the emitter and the base of the second triode are electrically connected to the collector of the first triode, and the collector of the second triode is electrically connected to the ground terminal; Wherein, the first transistor and the second transistor are NPN transistors.

10. The temperature sampling circuit according to claim 1, characterized in that: The semiconductor temperature control device includes a third transistor, which is a PNP transistor. The collector and base of the third transistor are electrically connected to the voltage divider device, and the emitter of the third transistor is electrically connected to the ground terminal.

11. The temperature sampling circuit according to claim 1, characterized in that: The semiconductor temperature control device comprises: a third triode, wherein the collector and the base of the third triode are electrically connected to the voltage divider; and a fourth triode, wherein the collector and the base of the fourth triode are electrically connected to the emitter of the third triode, and the emitter of the fourth triode is electrically connected to the ground terminal; Wherein, the third transistor and the fourth transistor are PNP transistors.

12. The temperature sampling circuit according to claim 1, characterized in that: The temperature sampling circuit further includes a current limiting device, which is connected in series between the voltage divider and the voltage sampling port.

13. A temperature sampling circuit according to claim 12, characterized in that: The current limiting device includes a current limiting resistor, and the current limiting resistor is connected in series between the voltage divider device and the voltage sampling port.

14. The temperature sampling circuit according to claim 1, characterized in that: The temperature sampling circuit further includes a filter device, which is connected in series between the voltage sampling port and the ground terminal.

15. The temperature sampling circuit according to claim 14, characterized in that: The filter device includes a filter capacitor, and the filter capacitor is connected in series between the voltage sampling port and the ground terminal.

16. A control system, characterized in that: include: Controller; as well as The temperature sampling circuit according to any one of claims 1 to 15, wherein the temperature sampling circuit collects the temperature of the controller and inputs the collected voltage signal into the controller.

17. A scooter, characterized in that: Comprising a control system as claimed in claim 16.

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