Package structure

Abstract

A package structure includes a first insulating layer, a second insulating layer, a magnetic element, a molding material, and a third insulating layer. A first insulating layer is formed on the substrate, and a first conductive feature is formed in the first insulating layer. The second insulating layer is formed on the first insulating layer. The magnetic element is arranged on the second insulating layer and comprises a plurality of dielectric layers and a plurality of magnetic conductive layers which are alternately stacked. A molding material covers the magnetic element and the conductive feature, and a conductive via penetrates the second insulating layer and the molding material. A third insulating layer is formed on the molding material, and a second conductive feature is formed in the third insulating layer. The first conductive feature, the conductive via, and the second conductive feature are electrically connected to form a coil surrounding the magnetic element.

Description

Technical Field

[0001] An embodiment of the utility model relates to a packaging structure, and more particularly to a packaging structure for forming an inductor using a semiconductor process. Background Art

[0002] The semiconductor industry continues to increase the integration density of various electronic components (such as transistors, diodes, resistors, capacitors, etc.) by continuously shrinking the minimum feature size, allowing more components to be packed into a given area. Individual dies are often packaged separately. The packaging not only protects the semiconductor device from environmental contaminants but also provides a connection interface for the encapsulated semiconductor device.

[0003] Three-dimensional integrated circuits (3DICs) are the latest development in semiconductor packaging, in which multiple semiconductor dies are stacked on top of each other, as exemplified by package-on-package (PoP) and system-in-package (SiP) packaging technologies. Some 3DICs are fabricated at the semiconductor wafer level by stacking dies on top of each other. 3DICs offer improved integration density and other advantages, such as faster speeds and higher bandwidth, due to, for example, reduced interconnect lengths between stacked dies. However, many challenges remain associated with 3DICs. Utility Model Content

[0004] An embodiment of the present invention provides a packaging structure, comprising a first insulating layer, a second insulating layer, a magnetic element, a molding material, and a third insulating layer. The first insulating layer is formed on a substrate, and a first conductive feature is formed in the first insulating layer. The second insulating layer is formed on the first insulating layer. The magnetic element is disposed on the second insulating layer and comprises a plurality of dielectric layers and a plurality of magnetic conductive layers stacked alternately. The molding material covers the magnetic element and the conductive feature, and a conductive via passes through the second insulating layer and the molding material. The third insulating layer is formed on the molding material, and the second conductive feature is formed in the third insulating layer. The first conductive feature, the conductive via, and the second conductive feature are electrically connected to form a coil surrounding the magnetic element.

[0005] According to some embodiments, the packaging structure also includes a packaging element disposed on the second insulating layer, wherein the packaging element is electrically isolated from the magnetic element, a top surface of the second conductive feature is higher than a top surface of the packaging element, and a bottom surface of the first conductive feature is lower than a bottom surface of the packaging element.

[0006] According to some embodiments, a thickness of the plurality of magnetic conductive layers is greater than a thickness of the plurality of dielectric layers.

[0007] According to some embodiments, the number of the plurality of magnetic permeable layers is greater than or equal to 2 and less than or equal to 40.

[0008] According to some embodiments, a height of the plurality of conductive vias is greater than a height of the magnetic element.

[0009] An embodiment of the present invention provides a method for manufacturing a packaging structure, comprising forming a first conductive feature in a first insulating layer. The method comprises forming a second insulating layer on the first insulating layer. The second insulating layer covers the first conductive feature. The method comprises disposing a magnetic element on the second insulating layer. The magnetic element comprises a plurality of dielectric layers and a plurality of magnetic conductive layers, and the dielectric layers and the magnetic conductive layers are stacked alternately. The method comprises forming a molding material covering the magnetic element. A plurality of conductive vias penetrates the second insulating layer and the molding material. The method also comprises forming a second conductive feature in a third insulating layer on the molding material. The first conductive feature, the conductive via, and the second conductive feature are electrically connected to form a coil surrounding the magnetic element.

[0010] An embodiment of the present invention provides a packaging structure, including a first conductive feature, an insulating layer, a first magnetic element, a plurality of first conductive vias, a second conductive feature, and a molding material. The first conductive feature is formed above a substrate. The insulating layer covers the first conductive feature. The first magnetic element is disposed on the insulating layer. The first conductive via is formed above the first conductive feature and electrically connected to the first conductive feature. The second conductive feature is located above the first conductive via and electrically connected to the first conductive via. The molding material is formed around the first magnetic element. The first magnetic element is laterally separated from the first conductive via by the molding material.

[0011] According to some embodiments, the package structure further includes: a second magnetic element disposed on the insulating layer, wherein the second magnetic element is vertically separated from the second conductive feature by the insulating layer.

[0012] According to some embodiments, in a direction parallel to a top surface of the substrate, a width of the first magnetic element is different from a width of the second magnetic element.

[0013] According to some embodiments, the packaging structure also includes: a first adhesion film, bonding the first magnetic element to the insulating layer; and a second adhesion film, bonding the second magnetic element to the insulating layer, wherein the sum of the heights of the first adhesion film and the first magnetic element is equal to the sum of the heights of the second adhesion film and the second magnetic element.

[0014] According to some embodiments, the first magnetic element includes a plurality of parts separated from each other, and the first magnetic element has a first width and a second width in a direction parallel to a top surface of the substrate, and the first width is different from the second width.

[0015] At least one embodiment of the present invention has the following advantages or technical effects: the packaging structure of the present invention includes at least one inductor, which is formed by a magnetic element surrounded by a coil. The inductor works together with the packaging element (such as a device) in the packaging structure to reduce signal interference or stabilize the voltage of the device. In addition, the inductor formed by the magnetic element and the coil is embedded in the molding material together with the packaging element, which is compatible with the existing packaging process, thereby reducing the time and cost of the overall process. In addition, the magnetic element includes a plurality of magnetically conductive layers separated from each other by a dielectric layer. Therefore, the eddy current induced by the inductor can be reduced, thereby improving the performance of the inductor. BRIEF DESCRIPTION OF THE DRAWINGS

[0016] The following detailed description, taken in conjunction with the accompanying drawings, will provide a better understanding of the concepts of the disclosed embodiments. It should be noted that, in accordance with standard industry practice, the various features in the drawings are not necessarily drawn to scale. In fact, the dimensions of various features may be arbitrarily enlarged or reduced for clarity of illustration. Similar reference numerals are used throughout the specification and drawings to indicate similar features.

[0017] Figures 1A to 1T 2 is a cross-sectional view illustrating various stages of forming a package structure according to some embodiments of the present disclosure.

[0018] Figure 2 is a cross-sectional view illustrating a package structure according to some embodiments of the present disclosure.

[0019] Figure 3 FIG. 4 is a schematic top view of a packaging structure according to some embodiments of the present disclosure.

[0020] Figure 4 FIG. 4 is a schematic top view of a packaging structure according to some embodiments of the present disclosure.

[0021] Figure 5 FIG. 4 is a schematic top view of a packaging structure according to some embodiments of the present disclosure.

[0022] Figure 6 FIG. 4 is a schematic top view of a packaging structure according to some embodiments of the present disclosure.

[0023] Figure 7 is a cross-sectional view illustrating a magnetic element according to some embodiments of the present disclosure.

[0024] Figure 8 FIG2 is a schematic plan view illustrating a magnetic element and a coil according to some embodiments of the present disclosure.

[0025] Figure 9 FIG2 is a schematic plan view illustrating a magnetic element and a coil according to some embodiments of the present disclosure.

[0026] FIG. 10A to FIG. 10B is a plan view schematically illustrating a packaging structure according to some embodiments of the present disclosure.

[0027] Figure 11 is a schematic diagram illustrating an apparatus for forming a magnetic permeable layer according to some embodiments of the present disclosure.

[0028] The accompanying drawings are described as follows:

[0029] 10,20,30,40,50,55: packaging structure

[0030] 100: Base

[0031] 100A: Top surface

[0032] 100B: bottom

[0033] 101: Release layer

[0034] 102: carrier substrate

[0035] 110: first insulating layer

[0036] 112: Conductive characteristics

[0037] 115: Patterned photoresist layer

[0038] 116: Groove

[0039] 117: conductive through hole

[0040] 118:Seed layer

[0041] 119: Conductive material

[0042] 120: Second insulation layer

[0043] 121:Through hole

[0044] 125: Adhesion film

[0045] 125-1: First attachment film

[0046] 125-2: Second adhesion film

[0047] 130: Magnetic components

[0048] 130-1: First magnetic element

[0049] 130-2: Second magnetic element

[0050] 131: first magnetic element

[0051] 131-1: Part 1

[0052] 131-2: Part 2

[0053] 131-3: Part 3

[0054] 132: Second magnetic element

[0055] 132-1: Part 1

[0056] 132-2: Part 2

[0057] 132-3: Part 3

[0058] 133: First magnetic element

[0059] 133-1: Part 1

[0060] 133-2: Part 2

[0061] 133-3: Part 3

[0062] 134: Second magnetic element

[0063] 134-1: Part 1

[0064] 134-2: Part 2

[0065] 134-3: Part 3

[0066] 135:Packaging components

[0067] 136-1,136-2,136-3,136-4,136-5,136-6,136-7,136-8,136-9: Dielectric layer

[0068] 137: Bonding pad

[0069] 138-1,138-2,138-3,138-4,138-5,138-6,138-7,138-8: Magnetic layer

[0070] 140: Molding material

[0071] 142: Upper surface

[0072] 144:Seed layer

[0073] 145: Conductive material

[0074] 146: Patterned photoresist layer

[0075] 147: Wire

[0076] 148: Conductive characteristics

[0077] 149: Coil

[0078] 150: The third insulating layer

[0079] 151:Through hole

[0080] 152: Conductive characteristics

[0081] 160: fourth insulating layer

[0082] 162: Redistribution layer

[0083] 164: Conductive characteristics

[0084] 170: Fifth insulation layer

[0085] 172: Redistribution Layer

[0086] 180: Under-bump metal structure (UBM structure)

[0087] 190: Bump structure

[0088] 200: Integrated Circuits

[0089] 300: device chip

[0090] 500: Equipment

[0091] 502: Storage tank

[0092] 504:Container

[0093] 506: Coil

[0094] 508: Casting wheel

[0095] 509: blocking piece

[0096] 510: Raw materials

[0097] 520: Magnetic permeability layer

[0098] H1,H2,H3,H4:Height

[0099] L1: first length

[0100] L2: Second length

[0101] T1: First thickness

[0102] T2: Second thickness

[0103] W1: first width

[0104] W2: Second width

[0105] θ: angle. DETAILED DESCRIPTION

[0106] The following disclosure provides many different embodiments or examples for implementing different features of the embodiments of the present invention. Reference numerals and / or letters may be repeated in the various examples described in the embodiments of the present invention. These repetitions are for the purpose of brevity and clarity and do not in themselves indicate any relationship between the various disclosed embodiments and / or configurations. In addition, specific examples of components and configurations are described below to simplify the description of the embodiments of the present invention. Of course, these specific examples are merely illustrative and are not intended to limit the embodiments of the present invention. For example, in the following description, it is mentioned that a first feature is formed on or above a second feature, which means that it may include an embodiment in which the first feature and the second feature are in direct contact, and may also include an embodiment in which an additional feature is formed between the first feature and the second feature, so that the first feature and the second feature may not be in direct contact.

[0107] Additionally, spatially relative terms may be used herein. For example, "below," "beneath," "lower," "above," "upper," and similar terms may be used to describe the relationship of one element or feature to another element or feature depicted in the drawings. These spatially relative terms are intended to encompass different orientations of the device in use or operation in addition to the orientation depicted in the drawings. The device may be rotated 90 degrees or at other orientations, and the spatially relative terms used herein should be interpreted accordingly.

[0108] Embodiments of a packaging structure and a method for manufacturing the same are provided. This packaging structure includes an inductor formed by magnetic elements, each surrounded by a coil. The inductor, formed by the magnetic element and the coil, is embedded in a molding material along with the packaging element, which is compatible with existing packaging processes and thus reduces overall process time and cost. Furthermore, the magnetic element includes a plurality of magnetically conductive layers separated from each other by dielectric layers. This reduces eddy currents induced by the inductor, thereby improving the inductor's performance.

[0109] Figures 1A to 1T1 is a cross-sectional view illustrating various stages of forming a package structure 10 according to some embodiments of the present disclosure. For example, substrate 100 includes an organic substrate. In some embodiments, substrate 100 is made of a polymer such as polybenzoxazoles (PBO), polyimide (PI), or benzocyclobutene (BCB). However, the present disclosure is not limited thereto. In some embodiments, substrate 100 includes a semiconductor substrate, such as doped or undoped silicon, or an active layer of a semiconductor-on-insulator (SOI) substrate. In some embodiments, first package element 100 includes other semiconductor materials, such as germanium, compound semiconductors (including silicon carbide, gallium arsenide, gallium phosphide, indium phosphide, indium arsenide, and indium antimonide), alloy semiconductors (including SiGe, GaAsP, AlInAs, AlGaAs, GaInAs, GaInP, and GaInAsP), or combinations thereof. Other substrates, such as multilayer substrates or gradient substrates, may also be used.

[0110] In addition, a carrier substrate 102 is bonded to the bottom surface 100B of the substrate 100 via a release layer 101. The carrier substrate 102 can be a glass carrier substrate, a ceramic carrier substrate, a wafer (e.g., a silicon wafer), etc. The carrier substrate 102 can provide structural support during subsequent processing steps and in the completed structure. For example, the release layer 101 can be a light-to-heat-conversion (LTHC) coating. However, the present disclosure is not limited to this.

[0111] Next, if Figure 1BAs shown, a first insulating layer 110 is formed over the top surface 100A of the substrate 100. In some embodiments, the first insulating layer 110 includes a polymer such as polybenzoxazole (PBO), polyimide (PI), benzocyclobutene (BCB), or the like. The first insulating layer 110 can be formed, for example, by spin coating, chemical vapor deposition (CVD), physical vapor deposition (PVD), or other suitable deposition techniques. However, the present disclosure is not limited thereto. In some other embodiments, the first insulating layer 110 includes a dielectric material such as phospho-silicate glass (PSG), boro-silicate glass (BSG), boron-doped phospho-silicate glass (BPSG), undoped silicate glass (USG), or other similar materials. Other insulating materials formed by any acceptable process may be used. In some embodiments, a plurality of conductive features 112 are formed in the first insulating layer 110. The conductive features 112 may include a conductive material, such as a metal such as copper, aluminum, nickel, titanium, combinations thereof, or other suitable metals.

[0112] Then, if Figure 1C As shown, a patterned photoresist layer 115 is formed over the first insulating layer 110. The patterned photoresist layer 115 can be formed by a deposition process and a patterning process. The deposition process for forming the patterned photoresist layer 115 may include a chemical vapor deposition (CVD) process, a high-density plasma chemical vapor deposition (HDPCVD) process, a spin coating process, a sputtering process, or other applicable processes. The patterning process for forming the patterned photoresist layer may include a photolithography process and an etching process. The photolithography process may include photoresist coating (e.g., spin coating), soft baking, mask alignment, exposure, post-exposure baking, photoresist development, rinsing, and drying (e.g., hard baking). The etching process may include a dry etching process or a wet etching process.

[0113] In some embodiments, a plurality of grooves 116 are formed in the patterned photoresist layer 115. That is, the grooves 116 are separated from each other by portions of the patterned photoresist layer 115. At this stage, the portions of the patterned photoresist layer 115 are sandwiched between adjacent grooves 116 in the horizontal direction (e.g., parallel to the X-axis). At least one of the grooves 116 partially exposes one of the conductive features 112 below, which means that the groove 116 passes through the patterned photoresist layer 115 and exposes the first package component 100 below. In some embodiments, the grooves 116 have a height of less than about 300 μm. However, the present disclosure is not limited thereto. In some embodiments, the first grooves 115 are formed to have the same width in a direction parallel to the XY plane. However, the present disclosure is not limited thereto.

[0114] Then, if Figure 1D As shown, a seed layer 118 is formed on the patterned photoresist layer 115 and in the trench 116. In some embodiments, the seed layer 118 is conformally deposited on the patterned photoresist layer 115 and in the trench 116. For example, the thickness of the seed layer 118 in the direction perpendicular to the XY plane (e.g., the Z direction) is between about 100 nm and about 200 nm. to about However, the present disclosure is not limited thereto. In some embodiments, the seed layer 118 may include copper, nickel, tin, or an alloy thereof. However, the present disclosure is not limited thereto.

[0115] Next, if Figure 1E As shown, a conductive material 119 is deposited over the seed layer 118. In some embodiments, the conductive material 119 is formed on the patterned photoresist layer 115 and in the trench 116. In some embodiments, the trench 116 is overfilled by the seed layer 118. For example, the conductive material 119 can be formed by performing an electroplating process on the seed layer 118. The electroplating process can include, for example, an electrochemical plating (ECP) process or an electroless metal plating process. Other suitable processes are also within the scope of the present disclosure. The conductive material 119 can include, for example, copper, aluminum, nickel, titanium, a combination thereof, or other suitable metals.

[0116] like Figure 1FAs shown, a planarization process (e.g., chemical mechanical polishing (CMP) or any other suitable planarization process) is performed on the seed layer 118 and the conductive material 119. More specifically, portions of the seed layer 118 and the conductive material 119 above the top surface of the patterned photoresist layer 115 are removed, thereby forming a plurality of conductive vias 117 in the trenches 116 of the patterned photoresist layer 115. After the planarization process is completed, the top surfaces of the conductive vias 117 can be substantially coplanar with the top surface of the patterned photoresist layer 115.

[0117] like Figure 1G As shown, the patterned photoresist layer 115 is removed. In some embodiments, the patterned photoresist layer 115 can be subsequently removed by ashing, dissolving the photoresist mask, or by consuming the photoresist mask during an etching process. For example, the etching process can be a dry etching process or a wet etching process. In some embodiments, the dry etching process includes using a fluorine-based etchant gas, such as SF6, CxFy, NF3, or a combination thereof. The etching process can be a time-controlled process. In this way, the first conductive feature 112 is exposed.

[0118] Next, if Figure 1H As shown, a second insulating layer 120 is formed over the first insulating layer 110. In some embodiments, the second insulating layer 120 includes a polymer such as polybenzoxazole (PBO), polyimide (PI), benzocyclobutene (BCB), etc. The second insulating layer 120 can be formed, for example, by spin coating, chemical vapor deposition (CVD), physical vapor deposition (PVD), or other appropriate deposition techniques. However, the present disclosure is not limited thereto. In some other embodiments, the second insulating layer 120 includes a dielectric material such as phosphosilicate glass (PSG), borosilicate glass (BSG), boron-doped phosphosilicate glass (BPSG), undoped silicate glass (USG), or other similar materials. Other insulating materials formed by any acceptable process can be used. In some embodiments, the second insulating layer 120 can be formed by the same material and the same method as the first insulating layer 110. However, the present disclosure is not limited thereto. In some embodiments, the second insulating layer 120 is formed by using a material or method different from that of the first insulating layer 110.

[0119] Next, if Figure 1IAs shown, a plurality of magnetic elements 130 are disposed on the second insulating layer 120. In some embodiments, each magnetic element 130 is bonded to the second insulating layer 120 via an adhesive film 125. For example, the adhesive film 125 is formed on the second insulating layer 120 for subsequent bonding processes. For example, the material of the adhesive film 125 includes SiON, SiO2, any other suitable material, or a combination thereof. However, the present disclosure is not limited thereto. In some embodiments, the magnetic element 130 includes a plurality of dielectric layers and a plurality of magnetic conductive layers (not separately shown in this embodiment), and the dielectric layers and the magnetic conductive layers are alternately stacked. The following will be combined with Figure 7 The detailed structure of the magnetic element 130 is further described.

[0120] Meanwhile, a packaging component 135 is disposed on the second insulating layer 120. In some embodiments, the packaging component 135 is bonded to the second insulating layer 120 via an adhesive film 125. In some embodiments, the magnetic element 130 and the packaging component 135 are disposed on the second insulating layer 120 in the same step (e.g., during the same bonding process). For example, the packaging component 135 may be a device die, a package encapsulating a device die, a system-on-chip (SoC) die including a plurality of device dies packaged as a system, etc. The packaging component 135 may be or include a logic die, a memory die, an input / output die, an integrated passive device (IPD), etc., or a combination thereof. For example, the logic device die in the packaging component 135 may be a central processing unit (CPU) die, a graphics processing unit (GPU) die, a mobile application die, a micro control unit (MCU) die, a baseband (BB) die, an application processor (AP) die, etc. The memory die in package component 135 may include static random access memory (SRAM) die, dynamic random access memory (DRAM) die, etc. Package component 135 may include a semiconductor substrate and interconnect structures, which are not separately illustrated in this embodiment. In some embodiments, a plurality of bonding pads 137 are formed on package component 135. For example, bonding pads 137 may include a conductive material such as tungsten (W), cobalt (Co), nickel (Ni), copper (Cu), silver (Ag), gold (Au), aluminum (Al), any other suitable conductive material, or a combination of the foregoing.

[0121] Then, if Figure 1J As shown, a molding material 140 is formed over the conductive vias 117, the magnetic elements 130, and the packaging element 135. That is, the molding material 140 can encapsulate (i.e., cover) the semiconductor die, the conductive vias 117, the magnetic elements 130, and the packaging element 135. The packaging element 135 is vertically (e.g., in the Z direction) and horizontally (e.g., in the X / Y direction). For example, the molding material 140 can include an epoxy polymer material (e.g., epoxy molding compound (EMC)). The molding material 140 can be formed, for example, by CVD, PECVD, PVD, spin coating, lamination, or other suitable deposition techniques. In some embodiments, the molding material 140 is deposited to have a thickness greater than 50 μm, however, the present disclosure is not limited thereto.

[0122] like Figure 1K As shown, a planarization process can be performed on the upper surface of the molding material 140 until the upper surface of the conductive via 117 (or the upper surface of the bonding pad 137 of the package component 135) is exposed. In some embodiments, the upper surface 142 of the molding material 140 is substantially coplanar with the upper surface of the conductive via 117 (or the upper surface of the bonding pad 137 of the package component 135). The planarization process can include, for example, a mechanical grinding process and / or a CMP process. In some embodiments, after the planarization process is completed, the upper surface of the magnetic element 130 is still covered by the molding material 140, which ensures that the magnetic element 130 is electrically isolated from other components.

[0123] Then, if Figure 1L As shown, the seed layer 144 is formed on the upper surface 142 of the molding material 140 and contacts the upper surface of the conductive via 117 (and / or the upper surface of the bonding pad 137 of the package component 135). In some embodiments, the seed layer 144 is conformally deposited on the molding material 140, the conductive via 117, and the package component 135. For example, the thickness of the seed layer 144 in the direction perpendicular to the XY plane (e.g., the Z direction) is between about 100 and 100 nm. to about In some embodiments, the thickness of the seed layer 144 is different from the thickness of the seed layer 118. For example, the seed layer 144 can be thinner than the seed layer 118. However, the present disclosure is not limited thereto. In some embodiments, the seed layer 144 can include copper, nickel, tin, or alloys thereof. However, the present disclosure is not limited thereto.

[0124] Next, if Figure 1MAs shown, a patterned photoresist layer 146 is formed above the seed layer 144. The patterned photoresist layer 146 can be formed by a deposition process and a patterning process. The deposition process for forming the patterned photoresist layer 146 can include a chemical vapor deposition (CVD) process, a high-density plasma chemical vapor deposition (HDPCVD) process, a spin coating process, a sputtering process or other applicable processes. The patterning process for forming the patterned photoresist layer can include a photolithography process and an etching process. The photolithography process can include photoresist coating (e.g., spin coating), soft baking, mask alignment, exposure, post-exposure baking, photoresist development, rinsing and drying (e.g., hard baking). The etching process can include a dry etching process or a wet etching process. In some embodiments, patterned photoresist layer 146 partially covers seed layer 144 , and thus, patterned photoresist layer 146 overlaps package component 135 and does not overlap conductive via 117 in a vertical direction (eg, Z direction) perpendicular to the XY plane.

[0125] Then, if Figure 1N As shown, conductive material 145 is deposited over the portion of seed layer 144 exposed to patterned photoresist layer 146. In some embodiments, conductive material 145 is formed in the grooves of patterned photoresist layer 146. For example, conductive material 145 can be formed by performing an electroplating process on seed layer 144. The electroplating process can include, for example, an electrochemical plating (ECP) process or an electroless metal plating process. Other suitable processes are also within the scope of the present disclosure. Conductive material 145 can include, for example, copper, aluminum, nickel, titanium, a combination of the foregoing metals, or other suitable metals.

[0126] like Figure 1O As shown, the patterned photoresist layer 146 is removed. In some embodiments, the patterned photoresist layer 146 is removed by a wet etching process. More specifically, the wet process includes applying a solution to remove the patterned photoresist layer 146. For example, this solution may include dimethylsufoxide (DMSO), water (H2O), tetramethylammonium hydroxide (TMAH), etc. However, the present disclosure is not limited thereto. In some embodiments, the patterned photoresist layer 146 may then be removed by ashing, dissolving the photoresist mask, or by consuming the photoresist mask during the etching process. For example, the etching process may be a dry etching process or a wet etching process. In some embodiments, the dry etching process includes using a fluorine-based etchant gas, such as SF6, CxFy, NF3, or a combination of the foregoing. The etching process may be a time-controlled process.

[0127] Next, if Figure 1P As shown, an etching process (e.g., a dry etching process or a wet etching process) is performed on the portion of the seed layer 144 that is not covered by the conductive material 145. More specifically, a portion of the seed layer 144 is removed to expose the top surface of the bonding pad 137 of the package component 135. For example, the etching process includes using an etching solution, such as hydrogen fluoride (HF), a copper / NH3 mixture, a solution containing TMAH, or a combination of the foregoing. In this way, the conductive material 145 and the seed layer 144 below remain above the molding material 140. It should be noted that for the sake of simplicity, the conductive material 145 and the seed layer 144 below are referred to as conductive features 148 in the following paragraphs, and the conductive features 148 are shown as representing the conductive material 145 and the seed layer 144 below in the following figures.

[0128] It should be noted that conductive feature 148 is electrically connected to conductive via 117 and conductive feature 112 to form a coil surrounding the corresponding magnetic element 130. Thus, a plurality of inductors can be formed to enhance the performance of the device in the final package structure. In some embodiments, the top surface of conductive feature 148 is higher than the top surface of package component 135, and the bottom surface of conductive feature 112 is lower than the bottom surface of package component 135. The resulting inductor operates in conjunction with package component 135 in the package structure to reduce signal interference or stabilize the voltage of package component 135. Furthermore, the inductor formed by magnetic element 130 and the coil is embedded in molding material 140 together with package component 135. Therefore, the configuration of magnetic element 130 is compatible with existing packaging processes, thereby reducing the time and cost of the overall process.

[0129] Next, if Figure 1Q As shown, a third insulating layer 150 is formed over the conductive features 148 and the package element 135. In some embodiments, the third insulating layer 150 includes a polymer such as polybenzoxazole (PBO), polyimide (PI), benzocyclobutene (BCB), etc. The third insulating layer 150 can be formed, for example, by spin coating, chemical vapor deposition (CVD), physical vapor deposition (PVD), or other suitable deposition techniques. However, the present disclosure is not limited in this regard. In some other embodiments, the third insulating layer 150 includes a dielectric material such as phosphosilicate glass (PSG), borosilicate glass (BSG), boron-doped phosphosilicate glass (BPSG), undoped silicate glass (USG), or other similar materials. Other insulating materials formed by any acceptable process can be used. In some embodiments, the third insulating layer 150 can be formed from the same material and by the same method as the first insulating layer 110 or the second insulating layer 120. However, the present disclosure is not limited in this regard. In some embodiments, the third insulating layer 150 is formed using a different material or method than the first insulating layer 110 or the second insulating layer 120.

[0130] Additionally, in some embodiments, a plurality of conductive features 152 are formed in third insulating layer 150. Conductive features 152 may comprise a conductive material. The conductive material may comprise a metal such as copper, aluminum, nickel, titanium, combinations thereof, or other suitable metals. In some embodiments, bond pads 137 are each aligned with a conductive feature 152 above package component 135 to form an electrical connection between package component 135 and the external environment. In some embodiments, conductive features 152 are electrically connected to conductive features 148.

[0131] Furthermore, a redistribution layer 162 is formed over third insulating layer 150. Redistribution layer 162 may include a conductive material. The conductive material may include a metal such as copper, aluminum, nickel, titanium, combinations thereof, or other suitable metals. In some embodiments, redistribution layer 162 is electrically connected to conductive features 152 to form an electrical connection between package component 135 and the external environment.

[0132] like Figure 1R As shown, a fourth insulating layer 160 is formed over the redistribution layer 162 and the third insulating layer 150. In some embodiments, the fourth insulating layer 160 includes a polymer such as polybenzoxazole (PBO), polyimide (PI), benzocyclobutene (BCB), etc. The fourth insulating layer 160 can be formed, for example, by spin coating, chemical vapor deposition (CVD), physical vapor deposition (PVD), or other suitable deposition techniques. However, the present disclosure is not limited thereto. In some other embodiments, the fourth insulating layer 160 includes a dielectric material such as phosphosilicate glass (PSG), borosilicate glass (BSG), boron-doped phosphosilicate glass (BPSG), undoped silicate glass (USG), or other similar materials. Other insulating materials formed by any acceptable process can be used. In some embodiments, the fourth insulating layer 160 can be formed from the same material and by the same method as the first insulating layer 110, the second insulating layer 120, or the third insulating layer 150. However, the present disclosure is not limited thereto. In some embodiments, the fourth insulating layer 160 is formed by using a different material or method than the first insulating layer 110 , the second insulating layer 120 , or the third insulating layer 150 .

[0133] Additionally, in some embodiments, a plurality of conductive features 164 are formed in fourth insulating layer 160. Conductive features 164 may comprise a conductive material. The conductive material may comprise a metal such as copper, aluminum, nickel, titanium, combinations thereof, or other suitable metals. In some embodiments, conductive features 164 are electrically connected to redistribution layer 162 to form an electrical connection between package component 135 and the external environment.

[0134] Furthermore, a redistribution layer 172 is formed over fourth insulating layer 160. Redistribution layer 172 may include a conductive material. The conductive material may include a metal such as copper, aluminum, nickel, titanium, combinations thereof, or other suitable metals. In some embodiments, redistribution layer 172 is electrically connected to conductive features 164 to form an electrical connection between package component 135 and the external environment.

[0135] In addition, a fifth insulating layer 170 is formed over the redistribution layer 172 and the fourth insulating layer 160. In some embodiments, the fifth insulating layer 170 includes a polymer such as polybenzoxazole (PBO), polyimide (PI), benzocyclobutene (BCB), etc. The fifth insulating layer 170 can be formed, for example, by spin coating, chemical vapor deposition (CVD), physical vapor deposition (PVD), or other suitable deposition techniques. However, the present disclosure is not limited thereto. In some other embodiments, the fourth insulating layer 160 includes a dielectric material such as phosphosilicate glass (PSG), borosilicate glass (BSG), boron-doped phosphosilicate glass (BPSG), undoped silicate glass (USG), or other similar materials. Other insulating materials formed by any acceptable process can be used. In some embodiments, the fifth insulating layer 170 can be formed from the same material and by the same method as the first insulating layer 110, the second insulating layer 120, the third insulating layer 150, or the fourth insulating layer 160. However, the present disclosure is not limited thereto. In some embodiments, the fifth insulating layer 170 is formed by using a material or method different from that of the first insulating layer 110 , the second insulating layer 120 , the third insulating layer 150 , or the fourth insulating layer 160 .

[0136] Next, if Figure 1SAs shown, a plurality of under-bump metallization (UBM) structures 180 are formed through the fifth insulating layer 170 to the redistribution layer 172, and a plurality of bump structures 190 are formed above the UBM structures 180. The UBM structure 180 may include one or more layers of metals such as copper, nickel, and gold, which are formed by an electroplating process or the like. In some embodiments, the formation of the bump structure 190 may include placing a solder ball on the exposed portion of the UBM structure 180 and reflowing the solder ball. In some embodiments, the formation of the bump structure 190 includes performing an electroplating step to form a solder area above the UBM structure 180, followed by reflowing the solder area. However, the present disclosure is not limited thereto. In some embodiments, the bump structure 190 may include a controlled collapse chip connection (C4) bump, a solder bump, a copper bump, a micro bump, a bump formed by electroless nickel-electroless palladium immersion gold (ENEPIG) technology, a ball grid array (BGA) bump, a copper pillar, etc.

[0137] The UBM structure 180 and the bump structure 190 can be used to provide input / output connections to other electronic components, such as other device dies, redistribution structures, printed circuit boards (PCBs), motherboards, etc. The UBM structure 180 and the bump structure 190 can also be referred to as backside I / O pads, which can provide signal, supply voltage, and / or ground connections to the package component 135.

[0138] Next, if Figure 1T As shown, carrier substrate 102 is separated from substrate 100. In some embodiments where release layer 101 is a light-to-heat conversion (LTHC) coating, release layer 101 can be exposed to light to release it from substrate 100, thereby forming package structure 10. It should be noted that package structure 10 may also include other electronic components not shown in this embodiment to achieve other functions. All possible electronic components are considered within the scope of this disclosure.

[0139] Figure 2 FIG is a cross-sectional view of a package structure 20 according to some embodiments of the present disclosure. It should be noted that the package structure 20 of this embodiment may include Figure 1T The same or similar elements as those in the package structure 10 shown in FIG. These elements will be represented by the same or similar reference numerals and will not be described in detail in the following paragraphs. Figure 2As shown, the package structure 20 includes a first magnetic element 130-1 bonded to the second insulating layer 120 via a first adhesive film 125-1. The package structure 20 also includes a second magnetic element 130-2 bonded to the second insulating layer 120 via a second adhesive film 125-2.

[0140] In some embodiments, the first adhesive film 125-1 has a height H1 and the second adhesive film 125-2 has a height H2. The first magnetic element 130-1 has a height H3 and the second magnetic element 130-2 has a height H4. For example, the height H3 of the first magnetic element 130-1 is different from the height H4 of the second magnetic element 130-2. This is because the number of magnetically conductive layers in the first magnetic element 130-1 is different from the number of magnetically conductive layers in the second magnetic element 130-2. In some embodiments, the sum of the heights H1 and H3 of the first adhesive film 125-1 and the first magnetic element 130-1 is substantially equal to the sum of the heights H2 and H4 of the second adhesive film 125-2 and the second magnetic element 130-2. In some embodiments, these heights H1, H2, H3, and H4 can be measured in a vertical direction (e.g., the Z direction) that is substantially perpendicular to the XY plane.

[0141] Figure 3 FIG. 1 is a top view schematic diagram illustrating a package structure 10 according to some embodiments of the present disclosure. Figure 3 As shown, the package structure 10 includes a magnetic element 130 located on opposite sides of the package element 135. Conductive vias 117 are disposed around and spaced apart from the magnetic element 130. In some other embodiments, the conductive vias 117 may each have a circular profile in a top view. However, the present disclosure is not limited thereto. In some embodiments, the conductive vias 117 may have a radius between about 10 μm and about 20 μm, for example, about 15 μm. The magnetic element 130 is laterally separated from the conductive vias 117 by the molding material 140. In some embodiments, the distance between the conductive via 117 and an adjacent magnetic element 130 may be in a range from about 5 μm to about 15 μm, for example, about 10 μm. For example, the distance between the conductive via 117 and an adjacent magnetic element 130 may be the minimum distance from the outer edge of the conductive via 117 to the outer edge of the magnetic element 130.

[0142] Figure 4 FIG. 1 is a top view schematic diagram illustrating a package structure 20 according to some embodiments of the present disclosure. Figure 4As shown, the package structure 20 includes a first magnetic element 130-1 and a second magnetic element 130-2 located on opposite sides of the package element 135. Conductive vias 117 are disposed around and spaced apart from the first and second magnetic elements 130-1, 130-2. In some other embodiments, the conductive vias 117 may each have a circular outline when viewed from above. However, the present disclosure is not limited in this regard. In some embodiments, the first magnetic element 130-1 may have a first length L1 and a first width W1, and the second magnetic element 130-2 may have a second length L2 and a second width W2. For example, the first length L1 may be greater than the second length L2, and the first width W1 may be less than the second width W2. In some embodiments, the first length L1 and the second length L2 may be measured in the Y direction, and the first width W1 and the second width W2 may be measured in the X direction. However, the present disclosure is not limited in this regard. In some embodiments, the number of magnetically permeable layers in the first magnetic element 130-1 is different from the number of magnetically permeable layers in the second magnetic element 130-2. For example, the number of magnetically permeable layers in the second magnetic element 130 - 2 (eg, 28) may be four times the number of magnetically permeable layers in the first magnetic element 130 - 1 (eg, 7). However, the present disclosure is not limited thereto.

[0143] Figure 5 FIG is a top view of a package structure 30 according to some embodiments of the present disclosure. It should be noted that the package structure 30 of this embodiment may include Figure 1T The same or similar elements as those in the package structure 10 shown in FIG. These elements will be represented by the same or similar reference numerals and will not be described in detail in the following paragraphs. Figure 5 As shown, package structure 30 includes a first magnetic element 131 and a second magnetic element 132 located on opposite sides of package element 135. In some embodiments, first magnetic element 131 includes a first portion 131-1, a second portion 131-2, and a third portion 131-3 connected to each other. The interfaces between first portion 131-1, second portion 131-2, and third portion 131-3 are shown as dashed lines. The widths of first portion 131-1, second portion 131-2, and third portion 131-3 differ from each other. For example, the width of first portion 131-1 may be in a range of approximately 5 μm to approximately 15 μm, for example, approximately 10 μm. The width of second portion 131-2 may be in a range of approximately 10 μm to approximately 20 μm, for example, approximately 15 μm. The width of third portion 131-3 may be in a range of approximately 15 μm to approximately 25 μm, for example, approximately 20 μm. However, the present disclosure is not limited in this regard. It should be noted that, for example, the widths of the first portion 131 - 1 , the second portion 131 - 2 , and the third portion 131 - 3 may be measured in the X direction.

[0144] In addition, the second magnetic element 132 includes a first portion 132-1, a second portion 132-2, and a third portion 132-3 that are interconnected. The interfaces between the first portion 132-1, the second portion 132-2, and the third portion 132-3 can be shown as dashed lines. The shapes of the first portion 132-1, the second portion 132-2, and the third portion 132-3 are different from each other. In this way, the second magnetic element 132 can form a regular or irregular outline. For example, the outline of the second magnetic element 132 can be polygonal. However, the present disclosure is not limited to this.

[0145] Figure 6 FIG is a top view of a package structure 40 according to some embodiments of the present disclosure. It should be noted that the package structure 40 of this embodiment may include Figure 5 The same or similar elements as those in the package structure 30 shown in FIG. These elements will be represented by the same or similar reference numerals and will not be described in detail in the following paragraphs. Figure 6 As shown, package structure 40 includes a first magnetic element 133 and a second magnetic element 134 located on opposite sides of package element 135. In some embodiments, first magnetic element 133 includes a first portion 133-1, a second portion 133-2, and a third portion 133-3 that are separated from each other. Similarly, the widths of first portion 133-1, second portion 133-2, and third portion 133-3 differ from each other. For example, the width of first portion 133-1 can be in a range of approximately 5 μm to approximately 15 μm, such as approximately 10 μm. The width of second portion 133-2 can be in a range of approximately 10 μm to approximately 20 μm, such as approximately 15 μm. The width of third portion 133-3 can be in a range of approximately 15 μm to approximately 25 μm, such as approximately 20 μm. However, the present disclosure is not limited in this regard. It should be noted that, for example, the widths of first portion 131-3, second portion 133-2, and third portion 133-3 can be measured in the X-direction.

[0146] In addition, the second magnetic element 134 includes a first portion 134-1, a second portion 134-2, and a third portion 134-3 that are separated from each other. The shapes of the first portion 134-1, the second portion 134-2, and the third portion 134-3 are different from each other. In this way, the second magnetic element 134 can form a regular or irregular contour. However, the present disclosure is not limited to this.

[0147] Figure 7 FIG is a cross-sectional view of a magnetic element 130 according to some embodiments of the present disclosure. Figure 7As shown, the magnetic element 130 includes a plurality of alternating stacked dielectric layers 136-1 to 136-9 and a plurality of magnetically conductive layers 138-1 to 138-8. In some embodiments, the magnetic element 130 is attached to the second insulating layer 120 via an adhesive film 125. The dielectric layer 136-1 is disposed on the adhesive film 125, and the magnetically conductive layer 138-1 is disposed on the dielectric layer 136-1. Similarly, the dielectric layer 136-2 is disposed on the magnetically conductive layer 138-1, and the magnetically conductive layer 138-2 is disposed on the dielectric layer 136-2. For example, the dielectric layers 136-1 to 136-9 may include epoxy or any other suitable adhesive material to bond the stacked magnetically conductive layers 138-1 to 138-8. However, the present disclosure is not limited thereto.

[0148] In some embodiments, the magnetic permeable layers 138-1 to 138-8 may have a first thickness T1, and the dielectric layers 136-1 to 136-9 may have a second thickness T2. The first thickness T1 may be different from the second thickness T2. In some embodiments, the second thickness T2 is greater than the first thickness T1. For example, the first thickness T1 may be between approximately 20 μm and approximately 0.01 μm, such as approximately 5 μm. The second thickness T2 may be between approximately 50 μm and approximately 0.1 μm, such as approximately 21 μm. However, the present disclosure is not limited thereto.

[0149] In some embodiments, the number of magnetically permeable layers in the magnetic element 130 is greater than or equal to 2 and less than or equal to 40. For example, the number of magnetically permeable layers in the magnetic element 130 is greater than or equal to 7 and less than or equal to 40. However, the present disclosure is not limited thereto. Because the magnetic element 130 includes a plurality of magnetically permeable layers (e.g., 138-1 to 138-8) separated from each other by dielectric layers (e.g., 136-1 to 136-9), eddy currents induced by the inductor can be reduced, thereby improving the performance of the inductor.

[0150] In some embodiments, conductive feature 112 is electrically connected to conductive via 117 via via 121 in second insulating layer 120. Similarly, conductive feature 148 is electrically connected to conductive via 117 via via 151 in third insulating layer 150. In this manner, coil 149 can be formed around magnetic element 130, thereby forming an inductor in the resulting package structure to enhance device performance. In some embodiments, molding material 140 is sandwiched between magnetic element 130 (e.g., dielectric layer 136-9) and third insulating layer 150 in a direction perpendicular to the top surface of substrate 100 (e.g., the Z direction). Thus, magnetic element 130 is electrically isolated from coil 149.

[0151] Figure 8 FIG is a schematic plan view showing the magnetic element 130 and the coil 149 according to some embodiments of the present disclosure. Figure 8As shown, magnetic element 130 is surrounded by coil 149. More specifically, coil 149 includes a wire 147, a conductive feature 148, a conductive via 117, and a conductive feature 112 that are electrically connected to each other, so that coil 149 has four turns around magnetic element 130. In some embodiments, an angle θ is formed between adjacent conductive features 112 and 148, and angle θ can range from, for example, about 2° to about 88°.

[0152] Figure 9 1 is a schematic plan view showing the magnetic element 130 and the coil 149 according to some embodiments of the present disclosure. It should be noted that the magnetic element 130 and the coil 149 of this embodiment may include Figure 8 The magnetic element 130 and the coil 149 are the same or similar elements. These elements will be represented by the same or similar reference numerals and will not be described in detail in the following paragraphs. Figure 9 As shown, the number of turns of coil 149 around magnetic element 130 is eight. It should be understood that the number of turns of coil 149 around magnetic element 130 is positively correlated with the inductance of the resulting inductor. For example, the number of turns of coil 149 around magnetic element 130 is proportional to the inductance of the resulting inductor.

[0153] FIG. 10A to FIG. 10B 1 is a schematic plan view showing package structures 50 and 55 according to some embodiments of the present disclosure. FIG. 10A to FIG. 10B As shown, package structures 50 and 55 each include an integrated circuit 200 and a device die 300. For example, integrated circuit 200 may be a power management integrated circuit (PMIC), and device die 300 may be a system-on-chip (SoC) die, including a plurality of device dies packaged as a system. For example, device die 300 may be or may include a logic die, a memory die, an input / output die, an integrated passive device (IPD), or the like, or a combination thereof. For example, a logic device die may be a central processing unit (CPU) die, a graphics processing unit (GPU) die, a mobile application die, a microcontroller unit (MCU) die, a baseband (BB) die, an application processor (AP) die, or the like. Memory die may include a static random access memory (SRAM) die, a dynamic random access memory (DRAM) die, or the like.

[0154] In some embodiments, the integrated circuit 200 and the device die 300 are electrically connected to an inductor formed by the magnetic element 130 and the coil 149. For example, the inductor can be placed in any space around the integrated circuit 200 and the device die 300. This increases the freedom and diversity of the overall design layout. More specifically, the magnetic element 130 can be curved but not form a closed loop. In some embodiments, the magnetic element 130 (and the coil 149) in an inductor can be divided into multiple, separate segments. This approach reduces the chances that the inductance generated by the various segments of the inductor will interfere with each other and reduce the efficiency of the inductor. This increases the inductance of the inductor formed by the magnetic element 130 and the coil 149, thereby improving the efficiency of the resulting inductor. Furthermore, the curved or split configuration of the inductor allows for more efficient use of the space within the package structures 50 and 55, thereby reducing unused space within the package structures 50 and 55.

[0155] Figure 11 is a schematic diagram showing an apparatus 500 for forming a magnetically conductive layer 520 according to some embodiments of the present disclosure. Figure 11 As shown, apparatus 500 includes a storage tank 502 for storing raw material 510 for a magnetically permeable layer 520. In some embodiments, raw material 510 includes liquid metal, such as Fe, Co, Ni, Nb, Si, B, or alloys thereof. In some embodiments, raw material 510 may be stored at a temperature of approximately 1300° C. However, the present disclosure is not limited thereto.

[0156] Next, the raw material 510 is transferred to a container 504 surrounded by a coil 506. In some embodiments, the coil 506 is turned on to heat the raw material 510 within the container 504, thereby maintaining the raw material 510 in a liquid state. In some embodiments, the raw material 510 can flow out of the container 504 and onto a casting wheel 508. The casting wheel 508 rotates to spin the raw material 510 and operates at a temperature of approximately 10°C. However, the present disclosure is not limited in this manner. In this manner, the raw material 510 can be rapidly cooled and form a magnetically permeable layer 520. The apparatus 500 includes a stopper 509 for removing the magnetically permeable layer 520 from the casting wheel 508. It should be noted that the resulting magnetically permeable layer 520 is suitable for use in any magnetic component described herein. In some embodiments, the magnetic permeability of the magnetically permeable layer 520 ranges from approximately 1,000 nH to approximately 1,000,000 nH. The magnetic permeability of the resulting magnetically permeable layer 520 varies depending on the elemental composition of the raw material 510.

[0157] As described above, the present disclosure relates to a packaging structure and a method for forming the same. The packaging structure includes at least one inductor, which is formed by a magnetic element surrounded by a coil. The inductor works together with the packaging element (e.g., a device) in the packaging structure to reduce signal interference or stabilize the voltage of the device. In addition, the inductor formed by the magnetic element and the coil is embedded in a molding material together with the packaging element, which is compatible with existing packaging processes, thereby reducing the time and cost of the overall process. In addition, the magnetic element includes a plurality of magnetically conductive layers separated from each other by dielectric layers. Therefore, the eddy current induced by the inductor can be reduced, thereby improving the performance of the inductor.

[0158] According to some embodiments, a packaging structure is provided, comprising a first insulating layer, a second insulating layer, a magnetic element, a molding material, and a third insulating layer. The first insulating layer is formed on a substrate, and a first conductive feature is formed in the first insulating layer. The second insulating layer is formed on the first insulating layer. The magnetic element is disposed on the second insulating layer and comprises a plurality of dielectric layers and a plurality of magnetic conductive layers stacked alternately. The molding material covers the magnetic element and the conductive feature, and a conductive via extends through the second insulating layer and the molding material. The third insulating layer is formed on the molding material, and the second conductive feature is formed in the third insulating layer. The first conductive feature, the conductive via, and the second conductive feature are electrically connected to form a coil surrounding the magnetic element.

[0159] In some embodiments, the package structure further includes a package element disposed on the second insulating layer, wherein the package element is electrically isolated from the magnetic element.

[0160] In some embodiments, a top surface of the second conductive feature is higher than a top surface of the package component, and a bottom surface of the first conductive feature is lower than a bottom surface of the package component.

[0161] In some embodiments, the thickness of the magnetic permeable layer is greater than the thickness of the dielectric layer.

[0162] In some embodiments, the material of the magnetic conductive layer includes Fe, Co, Ni, Nb, Si, B, or an alloy of Fe, Co, Ni, Nb, Si, and B.

[0163] In some embodiments, the number of the magnetically permeable layers is greater than or equal to 2 and less than or equal to 40.

[0164] In some embodiments, a height of the conductive via is greater than a height of the magnetic element.

[0165] According to some embodiments, a method for forming a packaging structure is provided, comprising forming a first conductive feature in a first insulating layer. The method comprises forming a second insulating layer on the first insulating layer. The second insulating layer covers the first conductive feature. The method comprises disposing a magnetic element on the second insulating layer. The magnetic element comprises a plurality of dielectric layers and a plurality of magnetically conductive layers, wherein the dielectric layers and the magnetically conductive layers are stacked alternately. The method comprises forming a molding material covering the magnetic element. A plurality of conductive vias extend through the second insulating layer and the molding material. The method also comprises forming a second conductive feature in a third insulating layer on the molding material. The first conductive feature, the conductive via, and the second conductive feature are electrically connected to form a coil surrounding the magnetic element.

[0166] In some embodiments, the method further includes disposing a packaging element on the second insulating layer, wherein the packaging element is disposed when the magnetic element is disposed.

[0167] In some embodiments, the conductive via is formed before forming the second insulating layer on the first insulating layer.

[0168] In some embodiments, the method further includes forming a magnetic element before disposing the magnetic element on the second insulating layer.

[0169] In some embodiments, forming the magnetic element further comprises forming the magnetically permeable layer by cooling a liquid metal material and rotating the liquid metal material around a casting wheel.

[0170] According to some embodiments, a package structure is provided, comprising a first conductive feature, an insulating layer, a first magnetic element, a plurality of first conductive vias, a second conductive feature, and a molding material. The first conductive feature is formed above a substrate. The insulating layer covers the first conductive feature. The first magnetic element is disposed on the insulating layer. The first conductive via is formed above the first conductive feature and electrically connected to the first conductive feature. The second conductive feature is located above the first conductive via and electrically connected to the first conductive via. The molding material is formed around the first magnetic element. The first magnetic element is laterally separated from the first conductive via by the molding material.

[0171] In some embodiments, the first magnetic element includes a plurality of first dielectric layers and a plurality of first magnetic conductive layers, and the first dielectric layers and the first magnetic conductive layers are alternately stacked.

[0172] In some embodiments, the package structure further includes a second magnetic element disposed on the insulating layer, wherein the second magnetic element is vertically separated from the second conductive feature by the insulating layer.

[0173] In some embodiments, a width of the first magnetic element is different from a width of the second magnetic element in a direction parallel to the top surface of the substrate.

[0174] In some embodiments, the second magnetic element includes a plurality of second dielectric layers and a plurality of second magnetic conductive layers, the second dielectric layers and the second magnetic conductive layers are alternately stacked, and the number of the first magnetic conductive layers is different from the number of the second magnetic conductive layers.

[0175] In some embodiments, the packaging structure further includes a first adhesion film that bonds the first magnetic element to the insulating layer; and a second adhesion film that bonds the second magnetic element to the insulating layer, wherein the sum of the heights of the first adhesion film and the first magnetic element is equal to the sum of the heights of the second adhesion film and the second magnetic element.

[0176] In some embodiments, the first magnetic element has a first width and a second width in a direction parallel to the top surface of the substrate, and the first width is different from the second width.

[0177] In some embodiments, the first magnetic element includes a plurality of parts separated from each other.

[0178] The features of many embodiments are summarized above so that those with ordinary knowledge in the technical field to which the present disclosure belongs can better understand the various embodiments of the present disclosure. Those with ordinary knowledge in the technical field to which the present disclosure belongs should understand that other processes and structures can be easily designed or changed based on the embodiments of the present disclosure to achieve the same purposes and / or achieve the same advantages as the embodiments introduced herein. Those with ordinary knowledge in the technical field to which the present disclosure belongs should also understand that these equivalent structures do not depart from the spirit and scope of the present disclosure. Various changes, substitutions and modifications can be made to the embodiments of the present disclosure without departing from the spirit and scope of the appended patent claims.

Claims

1. A packaging structure, characterized in that: include: a first insulating layer formed on a substrate; a first conductive feature formed in the first insulating layer; a second insulating layer formed on the first insulating layer; a magnetic element disposed on the second insulating layer, wherein the magnetic element comprises a plurality of dielectric layers and a plurality of magnetic conductive layers, and the dielectric layers and the magnetic conductive layers are alternately stacked; a molding material covering the magnetic element and the first conductive feature; a plurality of conductive vias extending through the second insulating layer and the molding material; a third insulating layer formed on the molding material; and a second conductive feature formed in the third insulating layer, The first conductive feature, the plurality of conductive vias, and the second conductive feature are electrically connected to form a coil surrounding the magnetic element.

2. The packaging structure according to claim 1, wherein: It also includes a packaging element disposed on the second insulating layer, wherein the packaging element is electrically isolated from the magnetic element, a top surface of the second conductive feature is higher than a top surface of the packaging element, and a bottom surface of the first conductive feature is lower than a bottom surface of the packaging element.

3. The packaging structure according to claim 1, wherein: A thickness of the plurality of magnetic conductive layers is greater than a thickness of the plurality of dielectric layers.

4. The packaging structure according to claim 1, wherein: The number of the plurality of magnetic conductive layers is greater than or equal to 2 and less than or equal to 40.

5. The packaging structure according to claim 1, wherein: A height of the plurality of conductive through holes is greater than a height of the magnetic element.

6. A packaging structure, characterized in that: include: a first conductive feature formed above a substrate; an insulating layer covering the first conductive feature; a first magnetic element disposed on the insulating layer; a plurality of first conductive vias formed above the first conductive feature and electrically connected to the first conductive feature; a second conductive feature located above and electrically connected to the plurality of first conductive vias; as well as a molded material formed around the first magnetic element, The first magnetic element is laterally separated from the plurality of first conductive vias by the molding material.

7. The packaging structure according to claim 6, wherein: Also includes: A second magnetic element is disposed on the insulating layer, wherein the second magnetic element is vertically separated from the second conductive feature by the insulating layer.

8. The packaging structure according to claim 7, wherein: In a direction parallel to a top surface of the substrate, a width of the first magnetic element is different from a width of the second magnetic element.

9. The packaging structure according to claim 7, wherein: Also includes: a first adhesive film bonding the first magnetic element to the insulating layer; as well as A second adhesive film is used to bond the second magnetic element to the insulating layer, wherein the sum of the heights of the first adhesive film and the first magnetic element is equal to the sum of the heights of the second adhesive film and the second magnetic element.

10. The packaging structure according to claim 6, wherein: The first magnetic element includes a plurality of parts separated from each other, and has a first width and a second width in a direction parallel to a top surface of the substrate, and the first width is different from the second width.

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