Temperature compensation device of wafer processing equipment

Abstract

The utility model discloses a temperature compensation device of wafer processing equipment, the wafer processing equipment comprises a chamber, the side wall of the chamber is provided with a feed inlet; the temperature compensation device comprises a ventilation pipeline which is fixedly arranged on the side wall of the cavity, one end of the ventilation pipeline is used for being connected with a gas source, and the other end of the ventilation pipeline is used for guiding gas to the feeding port; and the heating piece is fixedly arranged on the side wall of the ventilation pipeline and is used for heating gas in the ventilation pipeline. According to the utility model, the heat loss caused by gas convection when the feeding hole is opened or closed can be reduced, so that the overall temperature of the reaction cavity is more stable.

Description

Technical Field

[0001] The utility model relates to the technical field of semiconductor equipment, in particular to a temperature compensation device for wafer processing equipment. Background Art

[0002] Tetraethoxysilane is commonly used as a silicon source in PECVD reaction deposition of SiO2 thin films. While this process can be performed at relatively low temperatures, the deposition rate is significantly affected by temperature, increasing exponentially with wafer temperature. In actual production, the opening and closing of wafer gates during wafer transfer can cause localized heat convection at the inlet and outlet, lowering the temperature within the reaction chamber and significantly impacting the chamber temperature.

[0003] In the prior art, there are two solutions:

[0004] (1) The system uses thickness and the number of deposited films to fit a relationship, and then uses the compensation deposition time to increase the film thickness. However, the application scenario of this method is too limited to be put into production;

[0005] (2) In terms of equipment modification, the use of temperature-controlled sprinkler heads can achieve more precise temperature control. However, sprinkler heads are consumable equipment with relatively high overall costs, and the problem of heat loss caused by opening and closing doors has not been fundamentally improved.

[0006] Therefore, it is necessary to provide a new temperature compensation device for wafer processing equipment to solve the above problems existing in the prior art. Utility Model Content

[0007] The purpose of the utility model is to provide a temperature compensation device for wafer processing equipment, which is used to blow gas to the feed port of the chamber of the wafer processing equipment, thereby reducing the heat loss caused by gas convection when the feed port is opened or closed, and making the overall temperature of the reaction chamber more stable.

[0008] To achieve the above purpose, the technical solution of the utility model is as follows:

[0009] A temperature compensation device for wafer processing equipment, the wafer processing equipment comprising a chamber, the side wall of the chamber having a feed port for wafers to enter and exit; the temperature compensation device comprising:

[0010] A ventilation pipeline is fixedly arranged on the side wall of the chamber, one end of the ventilation pipeline is used to connect to the gas source, and the other end is used to guide the gas to the feed port;

[0011] The heating element is used to adjust the gas in the ventilation pipeline to a predetermined temperature.

[0012] By adopting the above technical solution, the ventilation pipe guides the gas to the feed port, and at the same time the heating element can heat the gas in the ventilation pipe so that the gas in the ventilation pipe has a certain temperature, reducing the heat loss caused by gas convection when the feed port is opened or closed, making the overall temperature of the reaction chamber more stable, and facilitating the wafer processing process.

[0013] Optionally, it further comprises a plurality of ventilation branches connected to the ventilation pipeline, and the number of the plurality of ventilation branches is the same as the number of the feed ports;

[0014] The ventilation branch has an air inlet end and an air outlet end. The air inlet end is fixedly arranged on the ventilation pipeline, and each of the air outlet ends faces the corresponding feed port and is used to guide the gas to the feed port.

[0015] By adopting the above technical solution, each air outlet end faces the corresponding feed port, and the gas in the ventilation pipe is guided to the corresponding feed port through the ventilation branch, so that each feed port can be heated, thereby compensating for the heat loss when the feed port is opened or closed.

[0016] Optionally, the gas outlet end has a gas outlet, and the gas outlet has a first side wall and a second side wall;

[0017] The length direction of the first side wall is perpendicular to the movement direction of the wafer entering and exiting the feed port, and the length direction of the second side wall is parallel to the movement direction of the wafer entering and exiting the feed port;

[0018] The length of the first sidewall is greater than the diameter of the wafer; the length of the second sidewall is in the range of 1-30 mm.

[0019] By adopting the above technical solution, the length of the first side wall is greater than the diameter of the wafer, so that the gas in the ventilation branch can more fully contact the wafer. In addition to temperature compensation, the wafer can also be preheated.

[0020] Optionally, the gas outlet is provided on the top wall of the feed inlet in the vertical direction, so that the gas outlet is connected to the feed inlet;

[0021] In the working state, the gas in the ventilation branch passes through the gas outlet and enters the feed port in a vertical direction.

[0022] By adopting the above technical solution, the gas enters the feed port in a vertical direction. During the wafer transfer process, the flow direction of the gas is perpendicular to the movement direction of the wafer, so that the gas can reach the wafer surface more quickly.

[0023] Optionally, a gas filtering device is fixedly provided on the ventilation pipeline, and the gas filtering device is provided between the gas source and the heating element for buffering and filtering the gas.

[0024] By adopting the above technical solution, the filter device is used for gas buffering and gas filtering, making the gas purer.

[0025] Optionally, a first control valve and a second control valve are fixedly provided on the ventilation pipeline, the first control valve is fixedly provided between the gas source and the gas filtering device, and the second control valve is fixedly provided between the heating element and the gas filtering device;

[0026] In a working state, the first control valve and the second control valve cooperate to control the opening and closing of the ventilation line to control the circulation of gas.

[0027] By adopting the above technical solution, the first control valve and the second control valve cooperate to control the opening and closing of the ventilation pipeline, thereby controlling the gas flow in the ventilation pipeline, making it easier to guide the gas to the feed port.

[0028] Optionally, also include:

[0029] a temperature sensor, fixedly arranged on the ventilation pipeline, for detecting the temperature of the gas in the ventilation pipeline;

[0030] a control system, electrically connected to the temperature sensor and the heating element, respectively;

[0031] In a working state, the temperature sensor feeds back a detection signal to the control system, and the control system adjusts the temperature of the heating element according to the feedback from the temperature sensor.

[0032] By adopting the above technical solution, the control system adjusts the temperature of the heating element according to the feedback of the temperature sensor, so that the gas in the ventilation pipeline is at a suitable temperature, which facilitates the guidance of the gas to the feed inlet for temperature compensation.

[0033] A wafer processing device includes a chamber, a gas source, a first gas supply pipeline and a temperature compensation device;

[0034] The side wall of the chamber is provided with at least one feed port for passing wafers;

[0035] One end of the first gas supply pipeline is connected to the gas source, and the other end is connected to the chamber, for introducing gas into the chamber;

[0036] The ventilation pipeline is fixedly arranged on the side wall of the first air supply pipeline and is communicated with the first air supply pipeline;

[0037] The ventilation pipeline is provided with a first control valve and a second control valve, and the ventilation pipeline is connected to a ventilation branch;

[0038] In the working state, the gas source provides gas, and the gas enters the interior of the chamber through the first gas supply pipe to participate in the processing of the wafer; the first control valve and the second control valve on the ventilation pipe are opened, and in the process of the gas in the first gas supply pipe entering the chamber, part of the gas enters the ventilation pipe connected to the first gas supply pipe, is heated in the ventilation pipe, and is guided to the feed port through the ventilation branch.

[0039] By adopting the above technical solution, when the first control valve and the second control valve are opened, the gas provided by the gas source enters the ventilation pipeline through the first gas supply pipeline, that is, the gas entering the chamber is the same as the gas guided to the feed port, which will not affect the wafer processing process.

[0040] Optionally, a second gas supply pipeline is further included, one end of which is connected to the gas source, and the other end of which is connected to the interior of the chamber, for introducing gas into the chamber.

[0041] By adopting the above technical solution, the first gas supply pipeline and the second gas supply pipeline are respectively used to provide different gases, which is suitable for providing gases that cannot be premixed, thereby facilitating the wafer processing process.

[0042] Optionally, the first air supply pipeline and the second air supply pipeline are both provided with a mass flow controller and a third control valve, the mass flow controller controls the air flow of the first air supply pipeline and the second air supply pipeline, and the third control valve is used to control the on and off of the first air supply pipeline and the second air supply pipeline.

[0043] By adopting the above technical solution and using the third control valve and the mass flow controller, the gas flow rate and pipeline connection and disconnection in the first gas supply pipeline and the second gas supply pipeline can be controlled, so that the appropriate gas flow rate can be selected according to demand.

[0044] The beneficial effects of the temperature compensation device for wafer processing equipment provided by the utility model include at least:

[0045] 1. Set up ventilation pipes and heaters to blow hot air to the feed inlet to reduce the heat loss caused by gas convection when opening or closing the feed inlet, making the overall temperature of the reaction chamber more stable;

[0046] 2. By regulating the gas flow rate during wafer transfer, particles on the wafer surface can be effectively cleaned, combining the functions of surface preheating and pre-cleaning. BRIEF DESCRIPTION OF THE DRAWINGS

[0047] Figure 1 This is a schematic diagram of a connection method of a temperature compensation device for wafer processing equipment according to an embodiment of the present utility model;

[0048] Figure 2 This is a schematic diagram of the connection method of the ventilation pipe and ventilation branch of a temperature compensation device of a wafer processing equipment according to an embodiment of the present utility model;

[0049] Figure 3 This is a bottom view schematic diagram of an air outlet structure of a temperature compensation device for wafer processing equipment according to an embodiment of the present utility model;

[0050] Figure 4 for Figure 1 Enlarged view of part A.

[0051] Reference numerals:

[0052] 100. Chamber; 110. Feed port; 200. Ventilation line; 300. Gas source; 210. Heating element; 220. Ventilation branch; 221. Gas inlet end; 222. Gas outlet end; 223. Gas outlet; 2231. First side wall; 2232. Second side wall; 230. First control valve; 240. Second control valve; 250. Temperature sensor; 260. Control system; 270. Gas filtering device; 400. First gas supply line; 500. Second gas supply line; 600. Mass flow controller; 700. Third control valve; 800. Connector. DETAILED DESCRIPTION

[0053] In order to make the purpose, technical solutions and advantages of the embodiments of the present invention clearer, the technical solutions in the embodiments of the present invention will be clearly and completely described below. Obviously, the described embodiments are part of the embodiments of the present invention, not all of the embodiments. Based on the embodiments in the present invention, all other embodiments obtained by ordinary technicians in this field without making creative work are within the scope of protection of the present invention. Unless otherwise defined, the technical terms or scientific terms used herein should be the common meanings understood by people with ordinary skills in the field to which the present invention belongs. The words "including" and similar words used in this article mean that the elements or objects appearing before the word include the elements or objects listed after the word and their equivalents, without excluding other elements or objects.

[0054] The specific implementation of the present invention will be further described in detail below with reference to the accompanying drawings.

[0055] Reference Figure 1-4The embodiment of the present invention provides a temperature compensation device for wafer processing equipment, wherein the wafer processing equipment includes a chamber 100, and a feed port 110 is provided on the side wall of the chamber 100, and the feed port 110 can be used for wafers to enter and exit. Specifically, the wafer is transferred to the inside of the chamber 100 or transferred from the inside of the chamber 100 to the outside of the chamber 100 through the feed port 110, wherein the temperature compensation device includes a ventilation pipe 200 and a heating element 210, wherein the ventilation pipe 200 is fixedly arranged on the side wall of the chamber 100, and its fixing method is as follows: The fixing method can be bonding, welding or bolting. In this embodiment, the ventilation pipe 200 is fixed to the outer wall of the chamber 100 by bolting. At the same time, one end of the ventilation pipe 200 is fixed to the gas source 300 and communicated with the gas source 300, and the other end is used to guide the gas to the feed port 110. During operation, the gas source 300 provides gas, the gas is transported to the ventilation pipe 200, and is guided to the feed port 110 through the ventilation pipe 200. At the same time, the heating element 210 is fixed to the ventilation pipe 200. The air pipe 200 can be fixedly arranged at the end of the ventilation pipe 200 or fixedly arranged at the side wall of the ventilation pipe 200. Specifically in this embodiment, the heating element 210 is fixedly arranged on the side wall of the ventilation pipe 200. The fixing method can be bonding, welding or clamping. In this embodiment, the heating element 210 is fixedly arranged on the side wall of the ventilation pipe 200 by clamping. At the same time, the heating element 210 can be a heating belt or a resistance wire. In this embodiment, the heating element 210 is preferably a A heating belt is provided, and the heating belt includes a ventilation line 200. During the gas delivery process, the heating element 210 adjusts the temperature of the ventilation line 200, thereby adjusting the temperature of the gas in the ventilation line 200, so that the temperature of the gas in the ventilation line 200 is within a predetermined temperature range, and the gas guided to the feed port 110 has a certain temperature, thereby performing temperature compensation at the feed port 110, reducing the possibility of temperature changes inside the chamber 100 caused by the opening of the feed port 110 during the wafer transfer process.

[0056] Reference Figure 1-4The temperature compensation device also includes a plurality of ventilation branches 220, and the plurality of ventilation branches 220 are all arranged in the ventilation pipeline 200. At the same time, the ventilation branches 220 are connected to the ventilation pipeline 200. The number of the plurality of ventilation branches 220 is the same as the number of the feed ports 110, and each ventilation branch 220 corresponds to a feed port 110, wherein the ventilation branch 220 can be fixedly arranged in the chamber 100, or can be arranged inside the side wall of the chamber 100. In this embodiment, part of the ventilation branch 220 is selected to be arranged inside the side wall of the chamber 100, and the height direction of the chamber 100 is defined as the vertical direction. The air outlet end 222 is arranged on the top wall of the feed port 110 along the vertical direction, and the air outlet 223 is connected to the feed port 110. The material port 110 is connected, so that the gas can enter the material port 110 through the gas outlet 223. In addition, the ventilation branch 220 is vertically arranged, so that the gas in the ventilation branch 220 enters the material port 110 in a vertical direction through the gas outlet 223. During the wafer transfer process, the flow direction of the gas is perpendicular to the movement direction of the wafer, so that the gas can reach the wafer surface more quickly; at the same time, it is possible to choose to set only one ventilation pipe 200, or to choose to set a ventilation pipe 200 and multiple ventilation branches 220. When only one ventilation pipe 200 is set, the ventilation pipe 200 covers all the material port 110; in this embodiment, it is selected to set a ventilation pipe 200 and multiple ventilation branches 220. Specifically, in the present embodiment, there are two ventilation branches 220, and the two ventilation branches 220 correspond one to one with the two feed ports 110; wherein the ventilation branch 220 has an air inlet end 221 and an air outlet end 222, and the air inlet end 221 is fixedly arranged on the ventilation pipe 200, and its fixing method can be selected from one-piece molding or clamping through a clamping member 800. In the present embodiment, the two are clamped through a clamping member 800. Specifically, in the present embodiment, the clamping member 800 is selected as a three-way valve, that is, the end of the ventilation pipe 200 is fixedly provided with a three-way valve by clamping, and the air inlet ends 221 of the two ventilation branches 220 are clamped to the three-way valve by clamping, so that the gas in the ventilation pipe 200 can enter the ventilation branch 220, and the air outlet end 222 of the ventilation branch 220 faces the corresponding feed port 110, so that the gas can be guided to the feed port 110, which is convenient for the temperature compensation process.

[0057] Reference Figure 1-4, the gas outlet end 222 has a gas outlet 223, and the gas is discharged from the gas outlet 223. The gas outlet 223 has a first side wall 2231 and a second side wall 2232, that is, the gas outlet 223 can be rectangular, triangular or other shapes, such as an ellipse; in this embodiment, the gas outlet 223 is selected to be rectangular, and the gas outlet 223 has two symmetrically arranged first side walls 2231 and two symmetrically arranged second side walls 2232; wherein the length direction of the first side wall 2231 is perpendicular to the movement direction of the wafer in and out of the feed port 110, and the length direction of the second side wall 2232 is parallel to the movement direction of the wafer in and out of the feed port 110, and the length of the first side wall 2231 is greater than the diameter of the wafer, so that the first side wall 2231 can cover the wafer in its own length direction. Wafer, during the wafer transfer process, the gas can fully contact the wafer, the length range of the first side wall 2231 is 300mm-330mm, specifically in this embodiment, the length of the first side wall 2231 is 310mm; the length range of the second side wall 2232 is 1-30mm, specifically in this embodiment, the length range of the second side wall 2232 is 1-5mm, such a setting enables the gas outlet 223 to completely cover the wafer in its own length direction and is relatively narrow in its own width direction. In addition to being able to perform temperature compensation, it can also increase the gas flow rate and wind pressure in a shorter wafer transfer channel, greatly enhancing the cleaning ability and strength. While cleaning and preheating the wafer, the hot air wall formed effectively reduces the heat loss caused by thermal convection.

[0058] Reference Figure 1-4 A gas filter device 270 is fixedly provided on the ventilation line 200. The gas filter device 270 is used to buffer and filter the gas to make the gas cleaner. The gas filter device 270 is provided between the gas source 300 and the heating element 210. In this embodiment, the gas filter device 270 is selected as a gas filter tank. The ventilation line 200 is connected to the gas filter tank. The gas filter tank can be filled with activated carbon or other substances that can achieve filtering effects, thereby filtering the gas. In addition, a first control valve 230 and a second control valve 240 are also provided on the ventilation line 200, wherein the first control valve 230 is fixedly provided. Between the gas source 300 and the gas filtering device 270, the ventilation line 200 is connected to the first control valve 230, and the first control valve 230 is used to control the on-off of the ventilation line 200. The second control valve 240 is fixedly arranged between the heating element 210 and the gas filtering device 270. The ventilation line 200 is connected to the second control valve 240, and the second control valve 240 is used to control the on-off of the ventilation line 200. During specific use, the first control valve 230 and the second control valve 240 work together to control the opening and closing of the ventilation line 200, thereby controlling the circulation of the gas and facilitating the gas flow process.

[0059] Reference Figure 1-4The temperature compensation device also includes a temperature sensor 250 and a control system 260. The temperature sensor 250 is fixedly arranged on the outer wall of the ventilation pipe 200, and its fixing method can be bonding, clamping or bolting. In this embodiment, the temperature sensor 250 is fixed to the outer wall of the ventilation pipe 200 by bolting. The temperature sensor 250 is used to detect the temperature of the ventilation pipe 200, thereby detecting the temperature of the gas in the ventilation pipe 200; the control system 260 is electrically connected to the temperature sensor 250 and the heating element 210 respectively. In the working state, the temperature sensor 250 feeds back the detection signal to the control system 260. The control system 260 adjusts the heating temperature of the heating element 210 according to the feedback of the temperature sensor 250, so that the temperature of the gas in the ventilation pipe 200 is stable, thereby facilitating the temperature compensation process.

[0060] The embodiment of the present application also discloses a wafer processing device, wherein the wafer processing device includes a chamber 100, a gas source 300, a first gas supply pipeline 400 and a temperature compensation device. A feed port 110 is provided on the side wall of the chamber 100. The feed port 110 is provided with at least one. In this embodiment, two feed ports 110 are selected. Both feed ports 110 are used to pass wafers. At the same time, a gate valve is provided at the feed port 110 for opening or closing the feed port 110. In addition, the first gas supply pipeline 400 is provided with a gate valve for opening or closing the feed port 110. One end of the gas supply line 400 is connected to the gas source 300, and the other end is connected to the chamber 100, which is used to introduce gas into the chamber 100 so that the gas from the gas source 300 can enter the chamber 100 through the first gas supply line 400. At the same time, the ventilation line 200 is fixedly arranged on the side wall of the first gas supply line 400 and is connected to the first gas supply line 400. When the gas source 300 supplies gas, part of the gas in the first gas supply line 400 enters the ventilation line 200 and enters the feed gas chamber through the ventilation branch 220. Inlet 110, since the gas entering the feed inlet 110 is the same as the gas entering the chamber 100, it will not affect the wafer processing process; during the operation, the gas source 300 provides gas, the gas enters the first gas supply pipeline 400, and enters the chamber 100 through the first gas supply pipeline 400 to participate in the reaction of the wafer. When the first control valve 230 and the second control valve 240 on the ventilation pipeline 200 are closed, the gas in the first gas supply pipeline 400 enters the chamber 100, When the first control valve 230 and the second control valve 240 are opened, a portion of the gas in the first gas supply line 400 enters the chamber 100, and the other portion enters the ventilation line 200 connected to the first gas supply line 400, and is heated in the ventilation line 200. The heated gas enters the feed port 110 through the ventilation branch 220. Specifically, the heated gas enters the feed port in a vertical direction through the gas outlet 223 to achieve temperature compensation and preheating and pre-cleaning of the wafer and other functions.

[0061] Reference Figure 1-4 The wafer processing equipment also includes a second gas supply pipeline 500, one end of which is connected to the gas source 300, and the other end is connected to the interior of the chamber 100, for introducing gas into the chamber 100, and the first gas supply pipeline 400 and the second gas supply pipeline 500 are respectively used to introduce different gases, thereby facilitating the wafer processing process; at the same time, the first gas supply pipeline 400 and the second gas supply pipeline 500 are both provided with a mass flow controller 600 and a third control valve 700. Specifically, in this embodiment, the mass flow controller 600 and the third control valve 700 are both fixed to the side walls of the first gas supply pipeline 400 and the second gas supply pipeline 500 by bolts; the mass flow controller 600 is used to control the gas flow in the first gas supply pipeline 400 and the second gas supply pipeline 500, and the third control valve 700 is used to control the on and off of the first ventilation pipeline 200 and the second gas supply pipeline 500, so as to facilitate the control of the gas flow at an appropriate flow rate according to demand.

[0062] The first gas supply line 400 and the second gas supply line 500 are used to introduce different gases according to demand. The gas in the first gas supply line 400 enters the ventilation line 200. The gases introduced include but are not limited to helium, oxygen, or nitrogen, etc., which are reaction source gases used in wafer processing. At the same time, the ventilation method refers to the following steps:

[0063] Step 1: Before transferring the wafer into the chamber 100, the gas from the ventilation line 200 enters the feed port 110 for preheating;

[0064] Step 2: When transferring the wafer into the reaction chamber, the gate valve at the feed port 110 is opened, and the external robotic arm transfers the wafer. The gas flow in the ventilation pipe 200 is increased, and the heating power of the heating element 210 is increased to start pre-cleaning and preheating the wafer.

[0065] Step 3: After the film feeding process into the reaction chamber is completed, the gate valve at the feed port 110 is closed, and the gas flow in the ventilation pipeline 200 is reduced.

[0066] Step 4: Deposition of an amorphous silicon oxide film begins, and the first control valve 230 and the second control valve 240 are closed.

[0067] Step 5: After the deposition is completed, the first control valve 230 and the second control valve 240 are opened, and a small flow of gas is introduced for temperature compensation.

[0068] Step 6: When transferring the wafer out of the chamber 100, the gate valve at the feed port 110 is opened, the robotic arm transfers the wafer, the gas flow in the ventilation line 200 is increased, and post-cleaning begins;

[0069] Step 7: After the film is transported out of the reaction chamber, the gate valve at the feed inlet 110 is closed, and the gas flow in the ventilation pipeline 200 is reduced.

[0070] The gas flow rate range of step 1, step 3, step 5 and step 7 is 3000-6000 sccm, and the gas flow rate range of step 2 and step 6 is 6000-12000 sccm.

[0071] The implementation principle of the temperature compensation device of the wafer processing equipment of the embodiment of the present application is as follows: the gas source 300 supplies gas, the first control valve 230 and the second control valve 240 are closed, the gas provided by the gas source 300 enters the interior of the chamber 100 through the first gas supply pipeline 400 and the second gas supply pipeline 500, the first control valve 230 and the second control valve 240 are opened, a part of the gas in the first gas supply pipeline 400 enters the chamber 100, and the other part enters the ventilation pipeline 200, and is filtered in the ventilation pipeline 200. After the filtered gas, the ventilation pipe 200 is wrapped with a resistance heating tape to make the gas in the ventilation pipe 200 reach a preset temperature, and the temperature is fed back and adjusted through the temperature sensor 250. When the pipeline is ready to enter the reaction chamber, the three-way valve is used to divide the gas into two beams, which enter the two ventilation branches 220 respectively and are guided to the feed port 110 through the ventilation branch 220. It can effectively clean the particles on the surface of the wafer, and combines the functions of surface preheating and pre-cleaning. At the same time, temperature compensation can be performed at the feed port 110.

[0072] While the embodiments of the present invention have been described in detail above, it will be apparent to those skilled in the art that various modifications and variations may be made to these embodiments. However, it should be understood that such modifications and variations are within the scope and spirit of the present invention as set forth in the claims. Furthermore, the present invention described herein may have other embodiments and may be implemented or carried out in a variety of ways.

Claims

1. A temperature compensation device for a wafer processing device, wherein the wafer processing device comprises a chamber (100), wherein a side wall of the chamber (100) has a feed port (110) for wafers to enter and exit; wherein: The temperature compensation device comprises: a ventilation pipe (200) fixedly disposed on a side wall of the chamber (100), one end of the ventilation pipe (200) being used to connect to a gas source (300), and the other end being used to guide the gas to the feed port (110); The heating element (210) is used to adjust the gas in the ventilation pipeline (200) to a predetermined temperature.

2. The temperature compensation device according to claim 1, characterized in that It also includes a plurality of ventilation branches (220) in communication with the ventilation pipeline (200), and the number of the plurality of ventilation branches (220) is the same as the number of the feed ports (110); The ventilation branch (220) has an air inlet end (221) and an air outlet end (222), wherein the air inlet end (221) is fixedly arranged on the ventilation pipeline (200), and each of the air outlet ends (222) faces the corresponding feed port (110) and is used to guide the gas to the feed port (110).

3. The temperature compensation device according to claim 2, characterized in that: The gas outlet end (222) has a gas outlet (223), and the gas outlet (223) has a first side wall (2231) and a second side wall (2232); The length direction of the first side wall (2231) is perpendicular to the movement direction of the wafer entering and exiting the feed port (110), and the length direction of the second side wall (2232) is parallel to the movement direction of the wafer entering and exiting the feed port (110); The length of the first side wall (2231) is greater than the diameter of the wafer; the length of the second side wall (2232) is in the range of 1-30 mm.

4. The temperature compensation device according to claim 3, characterized in that: The gas outlet (222) is arranged on the top wall of the feed port (110) in the vertical direction, so that the gas outlet (223) is in communication with the feed port (110); In the working state, the gas in the ventilation branch (220) passes through the gas outlet (223) and enters the feed port (110) in a vertical direction.

5. The temperature compensation device according to claim 1, characterized in that: A gas filter device (270) is fixedly provided on the ventilation pipeline (200). The gas filter device (270) is provided between the gas source (300) and the heating element (210) and is used for buffering and filtering gas.

6. The temperature compensation device according to claim 5, characterized in that: A first control valve (230) and a second control valve (240) are fixedly provided on the ventilation pipeline (200), wherein the first control valve (230) is fixedly provided between the gas source (300) and the gas filter device (270), and the second control valve (240) is fixedly provided between the heating element (210) and the gas filter device (270); In a working state, the first control valve (230) and the second control valve (240) cooperate to control the opening and closing of the ventilation pipeline (200) to control the circulation of gas.

7. The temperature compensation device according to claim 1, characterized in that: Also includes: a temperature sensor (250) fixedly disposed on the ventilation pipeline (200) and used to detect the temperature of the gas in the ventilation pipeline (200); a control system (260), electrically connected to the temperature sensor (250) and the heating element (210); In a working state, the temperature sensor (250) feeds back a detection signal to the control system (260), and the control system (260) adjusts the temperature of the heating element (210) according to the feedback from the temperature sensor (250).

8. A wafer processing equipment, characterized in that: It comprises a chamber (100), an air source (300), a first air supply pipeline (400), and the temperature compensation device according to any one of claims 1 to 7; The side wall of the chamber (100) is provided with at least one feed port (110) for passing wafers; One end of the first gas supply pipeline (400) is connected to the gas source (300), and the other end is connected to the chamber (100), and is used to introduce gas into the chamber (100); The ventilation pipeline (200) is fixedly arranged on the first air supply pipeline (400) and is in communication with the first air supply pipeline (400); The ventilation pipeline (200) is provided with a first control valve (230) and a second control valve (240), and the ventilation pipeline (200) is connected to a ventilation branch (220); In the working state, the gas source (300) provides gas, and the gas enters the interior of the chamber (100) through the first gas supply line (400) to participate in the processing of the wafer; the first control valve (230) and the second control valve (240) on the ventilation line (200) are opened, and in the process of the gas in the first gas supply line (400) entering the chamber (100), part of the gas enters the ventilation line (200) connected to the first gas supply line (400), is heated in the ventilation line (200), and is guided to the feed port (110) through the ventilation branch line (220).

9. The wafer processing equipment according to claim 8, characterized in that: The invention also includes a second gas supply pipeline (500), one end of which is connected to the gas source (300) and the other end of which is connected to the interior of the chamber (100), and is used to introduce gas into the chamber (100).

10. The wafer processing equipment according to claim 9, characterized in that: The first air supply pipeline (400) and the second air supply pipeline (500) are both provided with a mass flow controller (600) and a third control valve (700). The mass flow controller (600) controls the air flow of the first air supply pipeline (400) and the second air supply pipeline (500). The third control valve (700) is used to control the on / off of the first air supply pipeline (400) and the second air supply pipeline (500).

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