Double-source ion beam micro-nano polishing machine

Abstract

The utility model provides a double-source ion beam micro-nano polishing machine which comprises a vacuum bin, ion sources, a sample table and an ion beam current detection mechanism are arranged in the vacuum bin, the number of the ion sources is two, the two ion sources both face the sample table, and the ion beam current detection mechanism comprises a detection assembly and an ampere meter. The detection assembly comprises a detection electrode corresponding to the ion source, and one side, facing the ion source, of the detection electrode is a cup-shaped concave surface and is used for receiving a positive ion beam emitted by the ion source; the ampere meters are connected with the detection electrodes in a one-to-one correspondence mode and used for measuring ion beam current. According to the utility model, the detection electrode is matched with the corresponding ampere meter to timely and rapidly detect the distribution condition of the ion beam current, thereby reducing the influence caused by the condition change of the vacuum chamber.

Description

TECHNICAL FIELD

[0001] The utility model relates to ion beam equipment technical field especially points to a kind of double-source ion beam micro-nano polishing machine. BACKGROUND

[0002] When traditional ion beam equipment carries out sample polishing, it is mostly focused ion beam polishing, and is single ion source, the beam spot diameter of focused ion beam is small, processing time is long, and efficiency is low.In addition, after long-term work of ion beam equipment, the micro-particles generated by sample polishing adhere to ion source and vacuum chamber, which changes the conditions in the vacuum chamber, and then changes the energy distribution and form of ion beam, affecting the processing effect. SUMMARY

[0003] The utility model provides a kind of double-source ion beam micro-nano polishing machine, the distribution situation of ion beam current is detected in time and fast by detection electrode cooperation corresponding ammeter, reduce the influence caused by the change of vacuum chamber condition.

[0004] The technical scheme of the utility model is realized as follows: a kind of double-source ion beam micro-nano polishing machine, including vacuum chamber, ion source, sample table and ion beam current detection mechanism are provided in vacuum chamber, ion source includes two, two ion sources are all towards sample table, ion beam current detection mechanism includes detection component and ammeter, detection component includes the detection electrode corresponding to ion source, the side of detection electrode towards ion source is cup-shaped concave, for receiving positive ion beam shot by ion source;Ammeter is connected with detection electrode one by one, for measuring ion beam current.

[0005] Further, two ion sources are symmetrically arranged on the left and right sides of the sample table, the central axes of the ion beams emitted by the two ion sources overlap or are parallel, the detection component is located on the rear side of the sample table, and the detection component further includes an insulating ion layer, the left and right sides of the insulating ion layer are provided with detection electrodes.

[0006] Further, the included angle of the two ion sources is 120°, the detection component includes one detection electrode, and is located on the opposite side of the corresponding ion source, and the sample table is located between the ion beam current detection mechanism and the ion source.

[0007] Further, the detection component is connected with the support member, and the position of the detection component is adjusted through the support member.

[0008] Further, the support member is an XYZ three-axis linear module.

[0009] The utility model has the advantages of:

[0010] The double-source ion beam micro-nano polishing machine comprises an ion beam current detection mechanism, the ion beam current detection mechanism comprises two detection electrodes, and corresponding ammeters are matched, so that the distribution of the ion beam current can be detected in time and quickly, the distribution of the ion beam is quickly optimized, and the influence caused by the change of the vacuum chamber condition is reduced. BRIEF DESCRIPTION OF DRAWINGS

[0011] In order to more clearly illustrate the technical schemes in the embodiments of the present application or the prior art, the drawings needed to be used in the embodiments or the prior art description will be briefly introduced as follows. Obviously, the drawings in the following description are only some embodiments of the present application, and other drawings can be obtained by those skilled in the art without creative labor on the basis of these drawings.

[0012] Figure 1 It is a structural schematic view of the embodiment 1 of the present application.

[0013] Figure 2 It is a structural schematic view of the ion source.

[0014] Figure 3 It is a structural schematic view of the ion beam current detection mechanism of the embodiment 1.

[0015] Figure 4 It is a structural schematic view of the embodiment 2 of the present application.

[0016] Vacuum chamber 1, ion source 2, sample table 3, ion beam current detection mechanism 4, protective shell 5, protective shell 5 gas introduction channel 6, Penning ion gun 7, acceleration electrode 8, electrostatic lens 9, support member 10, insulating isolation layer 11, detection electrode 12, ammeter 13. DETAILED DESCRIPTION

[0017] The technical schemes in the embodiments of the present application will be described clearly and completely in combination with the drawings in the embodiments of the present application. Obviously, the described embodiments are only some embodiments of the present application, rather than all the embodiments. Based on the embodiments in the present application, all other embodiments obtained by those skilled in the art without creative labor fall within the protection scope of the present application.

[0018] Embodiment 1

[0019] As Figure 1 And 2As shown, a dual-source ion beam micro-nano polishing machine includes a vacuum chamber 1, which is equipped with an ion source 2, a sample stage 3, and an ion beam current detection mechanism 4. The ion source 2 is connected to a position adjustment module. The position adjustment module can be an existing structure, such as an XYZ three-axis linear module, or other structures, as long as the position of the ion source 2 can be adjusted along the X, Y, and Z directions, thereby ensuring that the central axis of the ion source 2 can be fine-tuned according to user needs.

[0020] The ion source 2 has a cylindrical structure and includes a protective shell 5. A gas introduction channel 6 is provided in the protective shell 5. A Penning ion gun 7, an accelerating electrode 8 and an electrostatic lens 9 are sequentially provided at the gas introduction channel 6. The positively charged ions generated by the Penning ion gun 7 are accelerated by the accelerating electrode 8 and enter the electrostatic lens 9. The electrostatic lens 9 further adjusts the focusing and distribution of the ion beam. By adding the accelerating electrode 8 and the electrostatic lens 9, it is easy to control the diameter and distribution of the ion beam, which is conducive to ensuring that the same processing plan produces the same processing effect.

[0021] like Figure 1 As shown, if the vacuum chamber 1 has a rectangular structure, the ion source 2 includes two, and the two ion sources 2 are symmetrically arranged on the left and right sides of the sample stage 3 (that is, located on the left and right sides of the vacuum chamber 1), the central axes of the ion beams emitted by the two ion sources 2 overlap or are parallel, the sample stage 3 is located between the two ion sources 2, and the ion beam flow detection mechanism 4 is located on the rear side of the sample stage 3 (located on the rear side of the vacuum chamber 1).

[0022] like Figure 1 and 3 As shown, the ion beam current detection mechanism 4 includes a detection assembly connected to a support member 10. The position of the detection assembly can be adjusted by the support member 10. For example, the support member 10 can be displaced in three dimensions (X, Y, and Z) within the ion beam distribution area. The ion beam current is measured point by point in each dimension, thereby monitoring the spatial distribution of the ion beam current in real time. The support member 10 can be a conventional structure, such as an X, Y, and Z three-axis linear module, or other structures.

[0023] The detection assembly includes an insulating isolation layer 11, with detection electrodes 12 fixed to both sides of the insulating isolation layer 11. The insulating isolation layer 11 and the detection electrodes 12 form an integral structure. The side of the detection electrode 12 facing away from the insulating isolation layer 11 has a cup-shaped concave surface, which faces the ion source 2 to facilitate receiving the positive ion beam emitted by the ion source 2. The ion beam current detection mechanism 4 also includes an ammeter 13, which corresponds to the detection electrode 12 one-to-one. One end of the ammeter 13 is connected to the detection electrode 12, and the other end is connected to the ground wire, and is used to measure the ion beam current.

[0024] The sample table 3 is used for carrying the sample and is installed on a rotatable, tiltable, three-dimensionally displaceable sample table base to adapt to different processing requirements of the sample, and the sample table base belongs to the prior art.

[0025] Embodiment 2

[0026] This embodiment is basically the same as Embodiment 1, except that, as shown in Figure 4 the vacuum chamber 1 is in a regular hexagonal structure, the included angle between the two ion sources 2 is 120°, the detection assembly corresponds to the ion source 2 one by one, the detection assembly includes a detection electrode 12 and is located on the opposite side of the corresponding ion source 2, and the sample table 3 is located between the ion beam current detection mechanism 4 and the ion source 2.

[0027] The above only describes the preferred embodiments of the present application and is not intended to limit the present application, and any modification, equivalent replacement, improvement, etc. made within the spirit and principle of the present application shall be included in the protection scope of the present application.

Claims

1. A dual-source ion beam micro-nano polishing machine, comprising a vacuum chamber, characterized in that: An ion source, a sample stage and an ion beam detection mechanism are provided in the vacuum chamber. There are two ion sources, both of which face the sample stage. The ion beam detection mechanism includes a detection component and an ammeter. The detection component includes a detection electrode corresponding to the ion source. The detection electrode has a cup-shaped concave surface facing the ion source and is used to receive the positively charged ion beam emitted by the ion source. The ammeter is connected to the detection electrode one by one for measuring the ion beam current.

2. The dual-source ion beam micro-nano polishing machine according to claim 1, characterized in that: The two ion sources are symmetrically arranged on the left and right sides of the sample stage. The central axes of the ion beams emitted by the two ion sources overlap or are parallel. The detection component is located on the rear side of the sample stage. The detection component also includes an insulating ion layer, and detection electrodes are arranged on the left and right sides of the insulating ion layer.

3. The dual-source ion beam micro-nano polishing machine according to claim 1, characterized in that: The angle between the two ion sources is 120°. The detection component corresponds to the ion source one by one. The detection component includes a detection electrode and is located directly opposite the corresponding ion source. The sample stage is located between the ion beam detection mechanism and the ion source.

4. A dual-source ion beam micro-nano polishing machine according to any one of claims 1 to 3, characterized in that: The detection component is connected to the supporting member, and the position of the detection component is adjusted through the supporting member.

5. The dual-source ion beam micro-nano polishing machine according to claim 4, characterized in that: The supporting component is an XYZ three-axis linear module.

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