Split type wafer supporting mechanism and process chamber

Abstract

The utility model provides a split type wafer supporting mechanism and a process chamber. The split type wafer supporting mechanism comprises a plurality of first ring bodies, a plurality of second ring bodies and a first lifting mechanism. The plurality of first ring bodies are arranged in the process chamber through the plurality of first support rods and are used for supporting a plurality of first positions on the edge of the wafer. And the plurality of first support rods are positioned on the periphery of the spray header below the wafer. The plurality of second ring bodies are arranged in the process chamber through the plurality of second support rods and are used for supporting a plurality of second positions of the wafer edge. And the plurality of second support rods are positioned on the periphery of the spray header below the wafer. The first lifting mechanism is connected with the plurality of first ring bodies through a plurality of first supporting rods, and is used for lifting the plurality of first ring bodies to a preset wafer conveying position before a back deposition process is carried out on the wafer so as to receive the wafer conveyed into the process chamber, and lifting the plurality of first ring bodies to a process position when the back deposition process is carried out on the wafer so as to receive the wafer conveyed into the process chamber; the plurality of second rings support the edge of the wafer together with the plurality of second rings.

Description

TECHNICAL FIELD

[0001] The utility model relates to thin film deposition technical field especially relates to a kind of split type wafer support mechanism, a kind of process chamber, a kind of processing method of semiconductor device and a kind of computer readable storage medium. BACKGROUND

[0002] In the existing semiconductor processing equipment for carrying out back deposition process, heating disc is used above process chamber for heating wafer to be processed, and shower head is used below for spraying process gas to wafer. However, in the existing process chamber, lifting pin is set in the center of lower shower disc to carry out wafer transfer step. This setting can cause uneven distribution of spray holes on the surface of shower head, leading to uneven distribution of process gas on the back of wafer, and further affecting the uniformity of film deposition thickness on the back of wafer.

[0003] In order to overcome the above-mentioned defects existing in the prior art, the technical field urgently needs an improved split type wafer support mechanism for making the distribution of spray holes on the shower head more uniform, thereby improving the uniformity of film deposition thickness. SUMMARY

[0004] The following gives a brief summary of one or more aspects to provide a basic understanding of these aspects. This summary is not an exhaustive overview of all contemplated aspects, and is neither intended to identify key or critical elements of all aspects nor delineate the scope of any or all aspects. Its sole purpose is to present some concepts of one or more aspects in a simplified form as a prelude to the more detailed description to be given later.

[0005] In order to overcome the above-mentioned defects existing in the prior art, the utility model provides a kind of split type wafer support mechanism, a kind of process chamber, a kind of processing method of semiconductor device and a kind of computer readable storage medium, can be supported by setting the split type wafer support structure of lift, wafer lifting is carried out to transfer piece, to make the distribution of spray holes on the shower head more uniform, thereby improving the uniformity of film deposition thickness.

[0006] Specifically, the first aspect of the utility model provides above-mentioned split type wafer support mechanism including a plurality of first ring body, a plurality of second ring body and first elevating mechanism. A plurality of first ring body is arranged in the process chamber through a plurality of first support rod, for supporting the plurality of first position of wafer edge to be processed, and exposing the back of wafer. The plurality of first support rod is located in the periphery of the shower head below the wafer. A plurality of second ring body is arranged in the process chamber through a plurality of second support rod, for supporting the plurality of second position of wafer edge, and exposing the back of wafer. The plurality of second support rod is located in the periphery of the shower head below the wafer. The first elevating mechanism is connected through the plurality of first support rod The plurality of first ring body is used to lift the plurality of first ring body to the preset wafer transfer position before carrying out back deposition process to the wafer, to receive the wafer transferred into the process chamber, and when carrying out back deposition process to the wafer, the plurality of first ring body is lifted to process position, to support the edge of wafer together with the plurality of second ring body.

[0007] Further, in some embodiments of the utility model, a plurality of first gas channels are respectively arranged on the plurality of second ring bodies. The plurality of second support rods are respectively provided with gas inlets. Inert gas is introduced into the plurality of first gas channels from the gas inlets, and is introduced into the front area above the wafer through the plurality of first gas channels, to protect the front of the wafer.

[0008] Further, in some embodiments of the utility model, the periphery of the wafer support mechanism is further provided with a gas extraction ring. The gas extraction height of the gas extraction ring is higher than the process position. A plurality of second gas channels are arranged on the plurality of first ring bodies. The inert gas enters the back area below the wafer from the front area above the wafer through the plurality of second gas channels, and is discharged from the process chamber through the gas extraction ring.

[0009] Further, in some embodiments of the utility model, a plurality of first gas channels are respectively arranged on the plurality of second ring bodies. A first spacing is maintained between each two adjacent first gas channels. A plurality of second gas channels are respectively arranged on the plurality of first ring bodies. A second spacing is maintained between each two adjacent second gas channels. The first spacing and / or the second spacing are determined according to the concentration of inert gas in the front area of the wafer.

[0010] Furthermore, in some embodiments of the present invention, the wafer support mechanism further includes a second lifting mechanism. The second lifting mechanism is connected to the plurality of second ring bodies via the plurality of second support rods, and is configured to control the lifting and lowering of the plurality of second ring bodies during a backside deposition process on the wafer to adjust a first distance between the shower head and the backside of the wafer, thereby adjusting a process window for the thin film deposition process.

[0011] Furthermore, in some embodiments of the present invention, the wafer support mechanism further includes a distance sensor and a heating plate lifting mechanism. The distance sensor is connected to the plurality of first rings and is configured to measure a second distance between the heating plate and the back surface of the wafer. The heating plate lifting mechanism is connected to the top of the heating plate above the wafer and is configured to control the lifting of the heating plate based on the second distance.

[0012] In addition, the process chamber provided in accordance with the second aspect of the present invention includes a heating plate, a split wafer support mechanism as provided in the first aspect of the present invention, and a shower head. The heating plate is located at the top of the process chamber and is used to heat the wafer to be processed during the backside deposition process. The split wafer support mechanism is used to support multiple positions of the edge of the wafer and expose the backside of the wafer. The shower head is located below the wafer support mechanism to spray process gas onto the backside of the wafer.

[0013] Furthermore, in some embodiments of the present invention, the process chamber also includes a power input module and / or a heating plate lifting mechanism and / or a heating wire. The power input module is connected to the top of the heating plate, and is used to input power to the heating plate to control the heating plate to heat up to a preset process temperature. The heating plate lifting mechanism is connected to the top of the heating plate. The wafer support mechanism includes a temperature sensor. The temperature sensor is used to measure the back surface temperature of the wafer. The heating plate lifting mechanism is used to control the lifting and lowering of the heating plate according to the back surface temperature. The heating wire is provided at the bottom of the process chamber, and is used to raise the temperature in the process chamber to a preset process temperature.

[0014] Furthermore, in some embodiments of the present invention, the process chamber further comprises a process gas source and a clean gas source. The process gas source is connected to the process gas inlet of the process chamber and is used to spray process gas onto the back side of the wafer via the shower head during the back side deposition process on the wafer. The clean gas source is connected to the clean gas inlet of the process chamber and is used to spray clean gas into the process chamber via the shower head after the back side deposition process is completed.

[0015] Further, in some embodiments of the present application, the process chamber further comprises an exhaust ring, the exhaust ring having an exhaust height higher than a process position of the backside deposition process. The plurality of first rings of the wafer support mechanism are provided with a plurality of second gas channels. Inert gas enters from a frontside region above the wafer to a backside region below the wafer via the plurality of second gas channels, and is exhausted from the process chamber via the exhaust ring. BRIEF DESCRIPTION OF DRAWINGS

[0016] The above features and advantages of the present application will be better understood through reading the detailed description of embodiments of the present application in conjunction with the following drawings, in which: the components are not necessarily drawn to scale, and components of similar or identical function or features can have the same or similar reference label.

[0017] Figure 1 FIG. 1 shows a front cross-sectional view of a process chamber with a wafer support mechanism lowered to a transfer position, according to some embodiments of the present application.

[0018] Figure 2 FIG. 2 shows a front cross-sectional view of a process chamber with a wafer support mechanism lowered to a process position, according to some embodiments of the present application.

[0019] Figure 3 FIG. 3 shows a right cross-sectional view of a process chamber, according to some embodiments of the present application.

[0020] Figure 4A FIG. 4 shows a structural schematic diagram of a first gas channel, according to some embodiments of the present application.

[0021] Figure 4B FIG. 5 shows a structural schematic diagram of a second gas channel, according to some embodiments of the present application.

[0022] Figure 5 FIG. 6 shows a top cross-sectional view of a wafer support mechanism, according to some embodiments of the present application.

[0023] Figure 6 FIG. 7 shows a flow schematic diagram of a processing method of a semiconductor device, according to some embodiments of the present application. DETAILED DESCRIPTION

[0024] The following describes the embodiments of the present application by specific examples, and those skilled in the art can easily understand other advantages and effects of the present application from the disclosure. Although the description of the present application will be introduced in combination with the preferred embodiments, it does not mean that the features of the present application are limited to the embodiments. On the contrary, the purpose of introducing the present application in combination with the embodiments is to cover other options or modifications that can be extended based on the claims of the present application. In order to provide a deep understanding of the present application, many specific details will be included in the following description. The present application can also be implemented without using these details. In addition, in order to avoid confusion or obscure the focus of the present application, some specific details will be omitted in the description.

[0025] In the description of the present application, it should be pointed out that, unless otherwise explicitly specified and limited, the terms "mounting", "connection", "connection" should be understood broadly, for example, it can be fixed connection, or detachable connection, or integrally connected; it can be mechanical connection, or electrical connection; it can be directly connected, or indirectly connected through intermediate medium, or the communication inside two elements. For those skilled in the art, the specific meaning of the above terms in the present application can be understood according to the specific circumstances.

[0026] In addition, "up", "down", "left", "right", "top", "bottom", "horizontal", "vertical" used in the following description should be understood as the orientation shown in the paragraph and the related drawings. Such relative terms are only for the convenience of description, and they do not mean that the devices described should be manufactured or operated in a particular orientation, so they should not be understood as a limitation on the present application.

[0027] It can be understood that although the terms "first", "second", "third" and the like can be used herein to describe various components, regions, layers and / or parts, these components, regions, layers and / or parts should not be limited by these terms, and these terms are only used to distinguish different components, regions, layers and / or parts. Therefore, the first component, region, layer and / or part discussed below can be called the second component, region, layer and / or part without deviating from some embodiments of the present application.

[0028] As described above, in the existing processing equipment for semiconductor devices for backside deposition process, a heating disc is used above the process chamber to heat the wafer to be processed, and a showerhead is used below to spray process gas to the wafer. However, in the existing process chamber, the wafer transfer step is performed by setting a lifting pin in the center of the lower shower disc. This setting will cause the shower holes on the surface of the showerhead to be distributed unevenly, resulting in uneven distribution of process gas on the back of the wafer, and further resulting in uneven film deposition thickness.

[0029] In order to overcome the above-mentioned defects of the prior art, the utility model provides a split wafer support mechanism, a process chamber, a method for processing a semiconductor device and a computer-readable storage medium. A split wafer support structure that can be raised and lowered can be set to support the wafer to be raised and lowered for wafer transfer, so that the spray holes on the spray head are more evenly distributed, thereby improving the uniformity of the thin film deposition thickness.

[0030] In some non-limiting embodiments, the processing method of the semiconductor device provided in the third aspect can be implemented by the process chamber provided in the second aspect.

[0031] Please refer to the specific Figures 1-3 . Figure 1 A front cross-sectional view of a process chamber is shown in which a wafer support mechanism provided by some embodiments of the present invention is raised and lowered to a wafer transfer position. Figure 2 A front cross-sectional view of a process chamber is shown, showing a wafer support mechanism provided according to some embodiments of the present invention being raised and lowered to a process position. Figure 3 A right side cross-sectional view of a process chamber provided according to some embodiments of the present invention is shown.

[0032] exist Figures 1-3 In the illustrated embodiment, the process chamber provided by the second aspect of the present invention includes a heating plate 11, a split wafer support mechanism provided by the first aspect of the present invention, and a shower head 12. The heating plate 11 is located at the top of the process chamber and is used to heat the wafer during the backside deposition process. The split wafer support mechanism is used to support multiple locations on the edge of the wafer and expose the backside of the wafer. The shower head 12 is located below the wafer support mechanism to spray process gas onto the backside of the wafer.

[0033] In addition, Figures 1-3 In the illustrated embodiment, the process chamber provided by the second aspect of the present invention further includes a power input module 111 and a heating filament 13. The power input module 111 is connected to the top of the heating plate 11 and is used to input power to the heating plate 11 to control the heating plate 11 to heat up to a predetermined process temperature. The heating filament 13 is located at the bottom of the process chamber and is used to raise the temperature within the process chamber to the predetermined process temperature.

[0034] In addition, Figures 1-3In the shown embodiment, the process chamber provided by the second aspect of the present application further comprises a process gas source and a cleaning gas source. In this regard, the process gas source comprises a process gas inlet 15 for spraying process gas to the back surface of the wafer via the showerhead 12 during the backside deposition process. The cleaning gas source comprises a cleaning gas inlet 16 for spraying cleaning gas into the process chamber via the showerhead 12 after the backside deposition process.

[0035] In addition, in Figures 1-3 In the shown embodiment, the process chamber provided by the second aspect of the present application further comprises an exhaust ring 17, which has an exhaust height higher than the process position of the backside deposition process. In this regard, the plurality of first ring bodies 142 of the wafer support mechanism are provided with a plurality of second gas channels, through which the inert gas enters the side surface of the wafer from the front surface area above the wafer and is exhausted out of the process chamber via the exhaust ring 17.

[0036] Those skilled in the art can understand that the above-mentioned embodiment of setting the exhaust height of the exhaust ring to be higher than the process position is only some non-limiting embodiments provided by the present application, which aims to clearly demonstrate the main concept of the present application and provide some specific schemes for the public to implement, but not for limiting the protection scope of the present application. Alternatively, in other embodiments, the exhaust position of the exhaust ring can be located at the side of the process position of the backside deposition process, and the exhaust height thereof can be lower than or equal to the height of the process position.

[0037] In addition, in Figures 1-3 In the shown embodiment, the process chamber provided by the second aspect of the present application further comprises a gas distribution plate 18 for uniformly distributing the process gas or cleaning gas output by the process gas source or the cleaning gas source.

[0038] In addition, in Figures 1-3 In the shown embodiment, the process chamber provided by the second aspect of the present application further comprises an adapter block 191 and a bellows 192. In this regard, the bellows 192 is connected between the adapter block 191 and the top of the process chamber, which can effectively seal the stretching and compression displacement stroke when the heating disc 11 is displaced up and down.

[0039] In addition, in some non-limiting embodiments, the process chamber provided by the second aspect described above can further be configured with a memory and a controller. The memory includes but is not limited to the computer readable storage medium provided by the fourth aspect described above, on which computer instructions are stored. The controller is connected to the memory and is configured to execute the computer instructions stored on the memory to implement the processing method of the semiconductor device provided by the third aspect described above.

[0040] Further, in Figure 4AIn the shown embodiment, the first aspect of the present application provides the above-mentioned split wafer support mechanism, which includes a plurality of first rings 142, a plurality of second rings 143, and a first lifting mechanism 144. The plurality of first rings 142 is arranged inside the process chamber via a plurality of first supporting rods 1421, for supporting a plurality of first positions of the edge of the wafer to be processed, and exposing the back surface of the wafer. Here, the plurality of first supporting rods 1421 is located at the periphery of the showerhead 12 below the wafer.

[0041] Specifically, the plurality of first supporting rods 1421 penetrates from the inside of the process chamber to the outside of the process chamber, and the first supporting rod 1421 is connected to the first ring 142 above the one end located inside the process chamber, and is connected to the first lifting mechanism 144 below the one end located outside the process chamber.

[0042] Similarly, the plurality of second rings 143 is arranged inside the process chamber via a plurality of second supporting rods 1431, for supporting a plurality of second positions of the edge of the wafer, and exposing the back surface of the wafer, wherein the plurality of second supporting rods 1431 is located at the periphery of the showerhead 12 below the wafer. The first lifting mechanism 144 is connected to the plurality of first rings 142 via the plurality of first supporting rods 1421, for lifting the plurality of first rings 142 to a preset wafer transfer position before the back surface deposition process of the wafer, to receive the wafer transferred into the process chamber, and for lifting the plurality of first rings 142 to a process position when the back surface deposition process of the wafer is performed, to support the edge of the wafer together with the plurality of second rings 143.

[0043] Here, the inner ring diameter of the first ring 142 and the second ring 143 is smaller than the diameter of the showerhead 12, so that the entire surface of the wafer is located within the diameter range of the showerhead 12.

[0044] Please further refer to Figure 4B , Figure 5 and Figure 4A . Figure 4B The structure diagram of the first gas channel is shown according to some embodiments of the present application. Figure 5 The structure diagram of the second gas channel is shown according to some embodiments of the present application. Figure 4A The top view cross-sectional view of the wafer support mechanism is shown according to some embodiments of the present application.

[0045] As Figure 2 shown, the plurality of second rings 143 is respectively provided with a plurality of first gas channels 1432, and the plurality of second supporting rods 1431 is respectively provided with a gas inlet 1433. Here, the inert gas is introduced into the plurality of first gas channels 1432 from the gas inlet 1433, and is introduced into the front surface area above the wafer via the plurality of first gas channels 1432, to protect the front surface of the wafer.

[0046] As shown in Figure 4B , the periphery of the wafer support mechanism is further provided with an exhaust ring 17, and the exhaust height of the exhaust ring 17 is higher than the process position. As shown in Figure 5 , a plurality of second gas passages 1422 are arranged on the plurality of first ring bodies 142, and the inert gas enters the back surface area below the wafer from the front surface area above the wafer through the plurality of second gas passages 1422, and is discharged from the process chamber through the exhaust ring 17.

[0047] Therefore, the above-mentioned split wafer support mechanism provided by the first aspect of the present application can directly introduce the inert gas into the front surface area above the wafer through the gas inlet 1433 and the plurality of first gas passages 1432, so as to protect the front surface of the wafer from being damaged. Then, the excess inert gas can enter the back surface area below the wafer from the front surface area above the wafer through the second gas passages 1422, and is discharged from the process chamber through the exhaust ring 17. Therefore, the sufficient inert gas can be effectively ensured to exist in the front surface area above the wafer to protect the wafer, and the problem that the inert gas cannot protect the wafer due to the too fast exhaust speed of the inert gas caused by directly arranging the exhaust ring 17 in the front surface area above the wafer can be avoided.

[0048] Further, in the embodiment shown in Figure 3 , a plurality of first gas passages 1432 are preferably arranged on each of the plurality of second ring bodies 143, and a first interval is maintained between each two adjacent first gas passages 1432. Similarly, a plurality of second gas passages 1422 are preferably arranged on each of the plurality of first ring bodies 142, and a second interval is maintained between each two adjacent second gas passages 1422. Here, the first interval and / or the second interval are determined according to the concentration of the inert gas in the front surface area of the wafer. For example, in the case that the required inert gas concentration in the front surface area of the wafer is high, the first interval of the first gas passages 1432 can be reduced, and the second interval of the second gas passages 1422 can be increased at the same time, so as to increase the speed of the inert gas introduced and reduce the speed of the inert gas extracted. Conversely, in the case that the required inert gas concentration in the front surface area of the wafer is low, the first interval of the first gas passages 1432 can be increased, and the second interval of the second gas passages 1422 can be reduced at the same time, so as to reduce the speed of the inert gas introduced and increase the speed of the inert gas extracted.

[0049] In addition, in the embodiment shown in Figure 1In the illustrated embodiment, the wafer support mechanism provided by the first aspect of the present application further preferably comprises a second lifting mechanism 145, which connects a plurality of second ring bodies 143 via a plurality of second supporting rods 1431, and is configured to control the plurality of second ring bodies 143 to lift or lower during a backside deposition process of the wafer, so as to adjust a first distance between the showerhead and the backside of the wafer, and thus adjust a process window of the thin film deposition process.

[0050] In addition, in Figure 2 and Figure 6 In the illustrated embodiment, the wafer support mechanism provided by the first aspect of the present application further preferably comprises a distance sensor 141 and a heating plate lifting mechanism 112. Here, the distance sensor 141 is connected to the plurality of first ring bodies 142, and is configured to measure a second distance between the heating plate 11 and the backside of the wafer. The heating plate lifting mechanism 112 is connected to the top of the heating plate 11, and is configured to control the heating plate 11 to lift or lower according to the second distance. Here, the distance sensor can be any one of a laser sensor, a force sensor or an acoustic wave sensor.

[0051] The working principle of the process chamber will be described below in combination with some embodiments of the processing method of the semiconductor device. Those skilled in the art can understand that the embodiments of the processing method are only some non-limiting embodiments provided by the present application, which are intended to clearly demonstrate the main idea of the present application and provide some specific schemes for the public to implement, but not to limit the overall function or overall working mode of the process chamber. Similarly, the process chamber is also only a non-limiting embodiment provided by the present application, and the execution subject and execution order of each step in the processing method of the semiconductor device are not limited.

[0052] For details, please refer to Figure 6 . Figure 6 A flowchart of the processing method of the semiconductor device according to some embodiments of the present application is shown.

[0053] As ​ shown, the controller in the process chamber provided by the second aspect of the present application can first control the plurality of first ring bodies 142 in the split-type wafer support mechanism to lift to a preset wafer transferring position, so as to receive the wafer transferred into the process chamber. Then, the controller can control the plurality of first ring bodies 142 to lift to the height of the plurality of second ring bodies 143, so as to support the edge of the wafer together with the plurality of second ring bodies 143.

[0054] Afterwards, the controller can perform backside deposition on the wafer. Specifically, during the backside deposition on the wafer, the controller can acquire a second distance between the heating disc 11 and the wafer, and according to the second distance, at least once, lift the heating disc 11 via the heating disc lifting mechanism 112 to adjust the distance between the heating disc 11 and the backside of the wafer.

[0055] In addition, in some preferred embodiments, the controller can also control the plurality of second ring bodies 143 to lift to adjust the first distance between the showerhead 12 and the backside of the wafer during the backside deposition process on the wafer, so as to adjust the process window of the thin film deposition process.

[0056] Afterwards, in response to the completion of the backside deposition process, the controller can lift the plurality of first ring bodies 142 to the wafer exchange position to take out the processed wafer from the process chamber.

[0057] In addition, in some preferred embodiments, in response to the completion of the backside deposition process, the controller can also spray cleaning gas into the process chamber via the cleaning gas inlet 16 of the cleaning gas source of the process chamber to clean the process chamber.

[0058] In summary, the above-mentioned split wafer support mechanism and process chamber provided by the present application can control the wafer lifting to exchange wafers by setting the liftable split wafer support structure, so that the showering holes on the showerhead are more uniformly distributed, thereby improving the uniformity of the thin film deposition thickness.

[0059] Although the above-described methods are illustrated and described as a series of acts for simplicity, it will be appreciated and understood that the methods are not limited by the order of acts, as some acts can, in accordance with one or more embodiments, occur simultaneously or in different order than shown and described herein, or can occur with other acts not expressly shown and described herein.

[0060] The previous description of the disclosure is provided to enable any person skilled in the art to make or use the disclosure. Various modifications to the disclosure will be apparent to those skilled in the art, and the general principles defined herein can be applied to other variations without departing from the spirit or scope of the disclosure. Thus, the disclosure is not intended to be limited to the examples and designs described herein, but is to be given the broadest scope consistent with the principles and novel features disclosed herein.

Claims

1. A split wafer support mechanism, characterized in that: include: A plurality of first ring bodies are provided in the process chamber via a plurality of first support rods, and are used to support a plurality of first positions of the edge of the wafer to be processed and expose the back side of the wafer, wherein the plurality of first support rods are located on the periphery of the shower head below the wafer; a plurality of second ring bodies, disposed inside the process chamber via a plurality of second support rods, for supporting a plurality of second positions of the edge of the wafer and exposing the back side of the wafer, wherein the plurality of second support rods are located on the periphery of the shower head below the wafer; and The first lifting mechanism connects the multiple first ring bodies via the multiple first support rods, and is used to lift the multiple first ring bodies to a preset wafer transfer position before the back side deposition process is performed on the wafer to receive the wafer introduced into the process chamber, and when the back side deposition process is performed on the wafer, lift the multiple first ring bodies to the process position to support the edge of the wafer together with the multiple second ring bodies.

2. The wafer support mechanism according to claim 1, wherein: A plurality of first gas channels are respectively provided on the plurality of second ring bodies, and a gas inlet is respectively provided at the bottom of the plurality of second support rods, wherein the inert gas flows into the plurality of first gas channels from the gas inlet and flows into the front area above the wafer through the plurality of first gas channels to protect the front surface of the wafer.

3. The wafer support mechanism according to claim 2, wherein: The periphery of the wafer support mechanism is also provided with an exhaust ring, and the exhaust height of the exhaust ring is higher than the process position. A plurality of second gas channels are provided on the plurality of first ring bodies, and the inert gas enters the back area below the wafer from the front area above the wafer through the plurality of second gas channels and is discharged from the process chamber through the exhaust ring.

4. The wafer support mechanism according to claim 3, wherein: The plurality of second ring bodies are respectively provided with a plurality of the first gas channels, and a first distance is maintained between each two adjacent first gas channels. A plurality of second gas channels are respectively provided on the plurality of first ring bodies, wherein a second spacing is maintained between each two adjacent second gas channels, and the first spacing and / or the second spacing is determined according to the concentration of the inert gas in the front area of ​​the wafer.

5. The wafer support mechanism according to claim 1, wherein: Also includes: The second lifting mechanism is connected to the multiple second ring bodies via the multiple second support rods, and is used to control the lifting and lowering of the multiple second ring bodies during the back-side deposition process of the wafer to adjust the first distance between the shower head and the back side of the wafer, thereby adjusting the process window of the thin film deposition process.

6. The wafer support mechanism according to claim 1, wherein: Also includes: a distance sensor connected to the plurality of first ring bodies and configured to measure a second distance between the heating plate and the back surface of the wafer; as well as A heating plate lifting mechanism is connected to the top of the heating plate above the wafer and is used to control the lifting of the heating plate according to the second distance.

7. A process chamber, characterized in that: include: a heating plate, located at the top of the process chamber, for heating the wafer during a backside deposition process on the wafer to be processed; The split wafer support mechanism according to any one of claims 1 to 6, configured to support multiple positions of the wafer edge and expose the back side of the wafer; as well as A shower head is located below the wafer supporting mechanism to spray process gas onto the back side of the wafer.

8. The process chamber according to claim 7, wherein: Also includes: a power input module connected to the top of the heating plate and used to input power to the heating plate to control the heating plate to heat up to a preset process temperature; and / or The heating wire is arranged at the bottom of the process chamber and is used to increase the temperature in the process chamber to the process temperature.

9. The process chamber according to claim 7, wherein: Also includes: a process gas source, wherein the process gas source is connected to a process gas inlet of the process chamber and is used to spray process gas onto the back side of the wafer via the shower head during a back side deposition process on the wafer; and A cleaning gas source is connected to a cleaning gas inlet of the process chamber and is used to spray cleaning gas into the process chamber through the shower head after the backside deposition process is completed.

10. The process chamber according to claim 7, wherein: Also includes: An exhaust ring, whose exhaust height is higher than the process position of the back deposition process, wherein multiple second gas channels are provided on the multiple first ring bodies of the wafer support mechanism, and the inert gas enters the back area below the wafer from the front area above the wafer through the multiple second gas channels and is discharged from the process chamber through the exhaust ring.

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