Nano-silicon crystal insulation board with built-in double-layer steel wire mesh
By setting a first insulation layer with low thermal conductivity and high tensile strength and a multi-bend steel wire mesh in the nanosilicon crystal insulation board, the problem of insufficient bonding strength between the inner and outer sides is solved, the safety and mechanical properties are improved, and the construction cost is reduced.
Patent Information
- Application Number
- CN202422987174.3
- Authority / Receiving Office
- CN · China
- Patent Type
- Utility models(China)
- Current Assignee / Owner
- Filing Date
- 2024-12-04
- Publication Date
- 2025-10-17
- Estimated Expiration
- 2034-12-04
AI Technical Summary
The existing nano-silicon crystal insulation board with built-in double-layer steel mesh has low bonding strength with the cast-in-place concrete exterior wall and mortar plaster layer on the inner and outer sides, resulting in high construction costs and insufficient safety performance.
A first insulation layer with higher tensile strength is set on a second insulation layer with lower thermal conductivity, and a multi-bend galvanized steel mesh is set in the first insulation layer. Positioning plates and anchors are combined to stabilize the position of the steel mesh and improve bonding strength and mechanical properties.
It enhances the bonding strength between the outer side of the insulation board and the mortar plaster layer, reduces the risk of the mortar plaster layer falling off, improves the safety and mechanical properties of the nanosilicon crystal insulation board, and reduces the application cost.
Smart Images
Figure CN223446409U_ABST
Abstract
Description
TECHNICAL FIELD
[0001] The utility model belongs to building thermal insulation technical field relates to a built-in double -layer steel wire net's nanometer silicon crystal heat preservation board. BACKGROUND
[0002] Nanometer silicon crystal heat preservation board is the heat -resistant composite polystyrene foam heat preservation board built-in steel wire net and forms the heat preservation formwork that does not need to dismantle, specifically is with nanometer ultra -light silicon inorganic cementitious material package, polystyrene aggregate, join small molecule water uniform stirring and die forming, it is built-in galvanized steel wire net enhancement simultaneously, and it is made through the technology such as maintenance, edging and the light plate material with the function of heat preservation and formwork integration with the integral of having.
[0003] Nanometer silicon crystal heat preservation board is currently mainly used for cast-in-situ concrete outer wall heat preservation and structure integration system, the steel wire net arranged inside has single layer steel wire net and double layer steel wire net, and the nanometer silicon crystal heat preservation board built-in double layer steel wire net can be directly used as the formwork that does not need to dismantle for cast-in-situ concrete outer wall external thermal insulation system due to high bending load resistance and high folding strength, and the concrete is integrated into one after being poured and formed, and the heat preservation board does not need to be removed, so the construction cost is lower.
[0004] In order to ensure the heat preservation effect of the nanometer silicon crystal heat preservation board, the heat preservation board usually adopts the 050-grade heat preservation board material with good heat preservation effect in the standard of "heat-resistant composite polystyrene foam heat preservation board" JG / T536-2017 during preparation, and the thermal conductivity thereof is less than or equal to 0.05 W / (m·K). The heat preservation performance of the 050-grade heat preservation board is better than that of the 060-grade heat preservation board, but the bonding performance, bending load resistance, folding strength and compressive strength are all poorer than those of the 060-grade heat preservation board, thereby leading to that the bonding strength between the nanometer silicon crystal heat preservation board and the cast-in-situ concrete outer wall and the mortar plaster layer on the two sides of the nanometer silicon crystal heat preservation board is not high, and further improvement is urgently needed. SUMMARY
[0005] The utility model discloses a kind of nanometer silicon crystal heat preservation boards built-in double layer steel wire net for the problems existing in prior art, to overcome the defect that the bonding strength between the nanometer silicon crystal heat preservation board and the cast-in-situ concrete outer wall and the mortar plaster layer on the two sides of the nanometer silicon crystal heat preservation board is not high.
[0006] The utility model is realized as follows:
[0007] A kind of nanometer silicon crystal heat preservation board built-in double layer steel wire net, it is characterized in that, including first heat preservation layer and the second heat preservation layer in the lower part of first heat preservation layer, first steel wire net is built-in in the first heat preservation layer, second steel wire net is built-in in the second heat preservation layer, the thermal conductivity of the second heat preservation layer is less than the first heat preservation layer, the tensile strength, compressive strength of the first heat preservation layer perpendicular to the plate surface direction is greater than the second heat preservation layer, the first heat preservation layer and second heat preservation layer are integrally die formed.
[0008] The second insulation layer adopts 050-grade thermosetting composite polystyrene board or 040-grade thermosetting composite polystyrene board, and the first insulation layer adopts 060-grade thermosetting composite polystyrene board.
[0009] Alternatively, the second insulation layer adopts 040-grade thermosetting composite polystyrene board, and the first insulation layer adopts 050-grade thermosetting composite polystyrene board.
[0010] The second steel wire mesh adopts a multi-bending galvanized steel wire mesh.
[0011] The second insulation layer is internally provided with a third insulation layer, the second steel wire mesh is arranged in the third insulation layer, and the third insulation layer is made of the same material as the first insulation layer.
[0012] The thickness of the first insulation layer is greater than or equal to 5 cm.
[0013] The second insulation layer is further internally provided with a fourth insulation layer, and the fourth insulation layer is made of the same material as the first insulation layer.
[0014] The thickness of the first insulation layer is 0.2-1 times the thickness of the second insulation layer.
[0015] The nanocrystalline silicon heat insulation board further comprises a plurality of positioning discs arranged on the upper side of the first steel wire mesh, and the upper end of the positioning disc is flush with the upper surface of the first insulation layer.
[0016] The positioning disc comprises a positioning concave disc and a detachable positioning block, the positioning concave disc is provided with a circular groove for mounting the detachable positioning block, and the bottom of the circular groove is provided with a circular hole.
[0017] The nanocrystalline silicon heat insulation board further comprises a plurality of anchor fasteners, the anchor fastener comprises a tail disc and an anchor rod, the tail disc of the anchor fastener is mounted in the circular groove when the detachable positioning block is removed from the circular groove, and the anchor rod passes through the circular hole at the bottom of the circular groove, the first insulation layer and the second insulation layer and extends out of the second insulation layer when the detachable positioning block is removed from the circular groove.
[0018] The utility model has the advantages of the following beneficial effects:
[0019] (1) The first insulation layer with high tensile strength is arranged on the upper part of the second insulation layer with low thermal conductivity, so that the bonding strength of the outer side of the heat insulation board and the mortar plaster layer is greatly improved, the risk of mortar plaster layer falling off is reduced, and the safety performance of the nanocrystalline silicon heat insulation board is improved.
[0020] (2) The first insulation layer with high compressive strength is internally provided with a layer of steel wire mesh, and the second insulation layer is internally provided with a multi-bending galvanized steel wire mesh, so that the compressive strength and the bending strength of the nanocrystalline silicon heat insulation board are greatly improved, and the mechanical properties of the nanocrystalline silicon heat insulation board are improved.
[0021] (3) The positioning disc is arranged on the upper side of the second steel wire net and has an upper end flush with the upper surface of the first thermal insulation layer, and the positioning disc is used to position the first steel wire net in a predetermined position during pressing of the nanocrystalline silicon thermal insulation board, so that the mechanical properties of the nanocrystalline silicon thermal insulation board are ensured not to change due to unstable position of the first steel wire net.
[0022] (4) The positioning disc is arranged in a combination structure of a positioning recess and a detachable positioning block, and when the nanocrystalline silicon thermal insulation board is used as a template at an installation site, the detachable positioning block can be removed from the circular groove, and the tail disc of the anchoring member is installed in the circular groove, so that the outer surface of the tail disc of the anchoring member does not protrude from the outer surface of the nanocrystalline silicon thermal insulation board, thereby greatly reducing the thickness of the plaster layer on the outer side of the thermal insulation board and reducing the application cost of the thermal insulation board. BRIEF DESCRIPTION OF DRAWINGS
[0023] Figure 1 Fig. 1 is a sectional view of a nanocrystalline silicon thermal insulation board according to an embodiment of the present application;
[0024] Figure 2 Fig. 2 is a sectional view of a nanocrystalline silicon thermal insulation board according to another embodiment of the present application;
[0025] Figure 3 Fig. 3 is a sectional view of a nanocrystalline silicon thermal insulation board according to another embodiment of the present application;
[0026] Figure 4 Fig. 4 is a sectional view of a nanocrystalline silicon thermal insulation board according to another embodiment of the present application;
[0027] Figure 5 Fig. 5 is a sectional view of a nanocrystalline silicon thermal insulation board before installation according to another embodiment of the present application;
[0028] Figure 6 Fig. 6 is a sectional view of a nanocrystalline silicon thermal insulation board after installation according to another embodiment of the present application;
[0029] Figure 7 Fig. 7 is a structural view of a positioning recess according to another embodiment of the present application;
[0030] Figure 8 Fig. 8 is a sectional view of a positioning disc according to another embodiment of the present application.
[0031] BRIEF DESCRIPTION OF DRAWINGS 100, first thermal insulation layer; 110, first steel wire net; 200, second thermal insulation layer; 210, second steel wire net; 300, third thermal insulation layer; 400, fourth thermal insulation layer; 500, positioning disc; 510, detachable positioning block; 520, positioning recess; 521, circular groove; 522, circular hole; 600, anchoring member; 610, tail disc; 620, anchor rod. DETAILED DESCRIPTION
[0032] The following is a further detailed description of the specific implementation of the present invention in conjunction with the accompanying drawings to make the technical solution of the present invention easier to understand and grasp. It should be understood that the specific embodiments described herein are only used to explain the present invention and are not intended to limit the present invention.
[0033] Example 1
[0034] This embodiment provides a nano-silicon crystal insulation board with a built-in double-layer steel wire mesh, such as Figure 1 As shown, it includes a first insulation layer 100 and a second insulation layer 200 located below the first insulation layer 100, the first insulation layer 100 has a built-in first steel mesh 110, the second insulation layer 200 has a built-in second steel mesh 210, the thermal conductivity of the second insulation layer 200 is smaller than that of the first insulation layer 100, the tensile strength and compressive strength of the first insulation layer 100 perpendicular to the plate surface are greater than those of the second insulation layer 200, and the first insulation layer 100 and the second insulation layer 200 are integrally molded. The first steel mesh 110 and the second steel mesh 210 are both galvanized steel mesh. The upper and lower reference numerals described in this utility model Figure 1 Viewing angle: during actual installation, the direction can be adjusted as needed.
[0035] Both the first insulation layer 100 and the second insulation layer 200 can adopt thermosetting composite polystyrene foam insulation board, and their main components are basically the same, that is, they both adopt the same inorganic gelling material and polystyrene particle aggregate. The difference is that the proportion of the inorganic gelling material in the first insulation layer 100 and the second insulation layer 200 is different, and the proportion of the inorganic gelling material in the second insulation layer 200 is smaller than that in the second insulation layer 200.
[0036] Specifically, in this embodiment, the second insulation layer 200 adopts 050-grade thermosetting composite polystyrene board, and the first insulation layer 100 adopts 060-grade thermosetting composite polystyrene board. The thickness of the first insulation layer 100 is preferably 0.2 to 1 times that of the second insulation layer 200, for example, 0.5 or 0.8 times.
[0037] In other optional embodiments, the second insulation layer 200 may also be made of 040-grade thermosetting composite polystyrene board, and the first insulation layer 100 may be made of 060-grade thermosetting composite polystyrene board. In other optional embodiments, the second insulation layer 200 may also be made of 040-grade thermosetting composite polystyrene board, and the first insulation layer 100 may be made of 050-grade thermosetting composite polystyrene board. When the second insulation layer 200 is made of 040-grade thermosetting composite polystyrene board with Class B fire resistance, the first insulation layer 100 may be made of 050-grade thermosetting composite polystyrene board or 060-grade thermosetting composite polystyrene board with Class A fire resistance, with a thickness of ≥5 cm, for example, 6 cm.
[0038] Example 2
[0039] The embodiment is based on the embodiment one, and a third insulation layer 300 is additionally arranged in the second insulation layer 200. Specifically, as shown in Figure 2 The third insulation layer 300 is arranged in the second insulation layer 200, the second steel wire mesh 210 is arranged in the third insulation layer 300, and the material of the third insulation layer 300 is consistent with the first insulation layer 100.
[0040] In the nanosilicon crystal insulation board, when the second steel wire mesh 210 directly contacts with the second insulation layer 200, the surface of the second steel wire mesh 210 has poor adhesion with the inorganic cementing material, which can cause the tensile strength of the nanosilicon crystal insulation board in the area of the second steel wire mesh 210 to be lower than that in other areas, and the tensile strength of the nanosilicon crystal insulation board is reduced due to the arrangement of the second steel wire mesh 210. In order to prevent the tensile strength of the nanosilicon crystal insulation board from being reduced due to the arrangement of the second steel wire mesh 210, the third insulation layer 300 with high tensile strength is used to improve the tensile strength of the second steel wire mesh 210.
[0041] The other structures of the embodiment are consistent with those of the embodiment one.
[0042] Embodiment three
[0043] The embodiment is based on the embodiment one, and a fourth insulation layer 400 is additionally arranged. Specifically, as shown in Figure 3 In order to enhance the adhesion strength between the nanocrystalline silicon insulation board and the cast-in-place concrete wall surface, a fourth insulation layer 400 is arranged at the lower part of the second insulation layer 200, and the material of the fourth insulation layer 400 is consistent with the first insulation layer 100. The fourth insulation layer 400 with high tensile strength is used to improve the adhesion performance between the insulation board and the cast-in-place concrete outer wall.
[0044] The other structures of the embodiment are consistent with those of the embodiment one.
[0045] Embodiment four
[0046] The difference between the embodiment and the embodiment three is the second steel wire mesh 210. Specifically, the second steel wire mesh 210 in the embodiment three is a flat steel wire mesh. As shown in Figure 4 The second steel wire mesh 210 in the embodiment is a multi-curved galvanized steel wire mesh, which can improve the bending performance and the bending strength of the nanosilicon crystal insulation board.
[0047] The other structures of the embodiment are consistent with those of the embodiment one.
[0048] Embodiment five
[0049] The embodiment is based on the embodiment one, and a positioning disc 500 and an anchor 600 are additionally arranged. Specifically, as shown in Figures 5-8As shown, the nanosilicon crystal insulation board further comprises a plurality of positioning discs 500 arranged on the upper side of the first steel wire mesh 110, and the upper end of the positioning disc 500 is flush with the upper surface of the first insulation layer 100. By using the positioning effect of the positioning disc 500, the position of the first steel wire mesh 110 can be at a predetermined position when the nanosilicon crystal insulation board is pressed, so as to ensure that the mechanical properties of the nanosilicon crystal insulation board will not change due to the unstable position of the first steel wire mesh 110.
[0050] As shown in the drawings, Figure 5 , 8 As shown, the positioning disc 500 comprises a positioning recessed disc 520 and a detachable positioning block 510, the positioning recessed disc 520 is provided with a circular groove 521 for mounting the detachable positioning block 510, and the bottom of the circular groove 521 is provided with a round hole 522. The detachable positioning block 510 is arranged in the circular groove 521 when the nanosilicon crystal insulation board is pressed, and is removed from the circular groove 521 after pressing.
[0051] When the nanosilicon crystal insulation board is used as a non-removable insulation formwork for cast-in-place concrete outer wall system, a plurality of anchor members 600 should also be installed during construction, as shown in the drawings, Figure 6 As shown, the anchor member 600 comprises a tail plate 610 and an anchor rod 620, the tail plate 610 of the anchor member 600 is arranged in the circular groove 521 when the detachable positioning block 510 is removed from the circular groove 521, and the anchor rod 620 respectively passes through the round hole 522 at the bottom of the circular groove 521, the first insulation layer 100, the second insulation layer 200 and extends out of the second insulation layer 200 when the detachable positioning block 510 is removed from the circular groove 521. The tail plate 610 of the anchor member 600 is arranged in the circular groove 521, and the outer surface thereof will not protrude from the outer surface of the nanosilicon crystal insulation board, so as to reduce the thickness of the plaster layer on the outer side of the nanosilicon crystal insulation board in the later stage.
[0052] The above is only a specific embodiment of the utility model, but the protection scope of the utility model is not limited thereto, and those skilled in the art should understand that the utility model includes but is not limited to the contents described in the drawings and the above specific embodiment. Any modification which does not deviate from the functional and structural principles of the utility model shall be included in the scope of the claims.
Claims
1. A nanosilicon crystal insulation board with a built-in double-layer steel wire mesh, characterized in that: The invention comprises a first thermal insulation layer (100) and a second thermal insulation layer (200) located below the first thermal insulation layer (100); the first thermal insulation layer (100) has a first steel mesh (110) built in, and the second thermal insulation layer (200) has a second steel mesh (210) built in, the thermal conductivity of the second thermal insulation layer (200) is smaller than that of the first thermal insulation layer (100), the tensile strength and compressive strength of the first thermal insulation layer (100) perpendicular to the plate surface are greater than those of the second thermal insulation layer (200), and the first thermal insulation layer (100) and the second thermal insulation layer (200) are integrally molded.
2. The nanosilicon crystal insulation board with built-in double-layer steel wire mesh according to claim 1, characterized in that: The second thermal insulation layer (200) is made of a 050-grade thermosetting composite polystyrene board or a 040-grade thermosetting composite polystyrene board, and the first thermal insulation layer (100) is made of a 060-grade thermosetting composite polystyrene board; Alternatively, the second thermal insulation layer (200) uses a 040-grade thermosetting composite polystyrene board, and the first thermal insulation layer (100) uses a 050-grade thermosetting composite polystyrene board.
3. The nanosilicon crystal insulation board with built-in double-layer steel wire mesh according to claim 1, characterized in that: The second steel wire mesh (210) is a multi-bend galvanized steel wire mesh.
4. The nanosilicon crystal insulation board with built-in double-layer steel wire mesh according to claim 1, characterized in that: A third thermal insulation layer (300) is provided in the second thermal insulation layer (200), the second steel mesh (210) is arranged in the third thermal insulation layer (300), and the material of the third thermal insulation layer (300) is consistent with that of the first thermal insulation layer (100).
5. The nanosilicon crystal insulation board with built-in double-layer steel wire mesh according to claim 1, characterized in that: The thickness of the first thermal insulation layer (100) is ≥5 cm.
6. The nanosilicon crystal insulation board with built-in double-layer steel wire mesh according to claim 1, characterized in that: A fourth thermal insulation layer (400) is further provided below the second thermal insulation layer (200), and the material of the fourth thermal insulation layer (400) is consistent with that of the first thermal insulation layer (100).
7. The nanosilicon crystal insulation board with built-in double-layer steel wire mesh according to claim 1, characterized in that: The thickness of the first thermal insulation layer (100) is 0.2 to 1 times that of the second thermal insulation layer (200).
8. The nanosilicon crystal insulation board with built-in double-layer steel wire mesh according to claim 1, characterized in that: The nano-silicon crystal insulation board further comprises a plurality of positioning plates (500) arranged on the upper side of the first steel wire mesh (110), and the upper ends of the positioning plates (500) are flush with the upper surface of the first insulation layer (100).
9. The nanosilicon crystal insulation board with built-in double-layer steel wire mesh according to claim 8, characterized in that: The positioning disc (500) comprises a positioning recessed disc (520) and a detachable positioning block (510); the positioning recessed disc (520) is provided with a circular groove (521) for mounting the detachable positioning block (510); and a circular hole (522) is provided at the bottom of the circular groove (521).
10. The nano-silicon crystal insulation board with built-in double-layer steel wire mesh according to claim 9, characterized in that: The nano-silicon crystal insulation board further comprises a plurality of anchoring members (600), wherein the anchoring members (600) comprise a tail plate (610) and an anchor rod (620), wherein the tail plate (610) of the anchoring member (600) is installed in the circular groove (521) when the detachable positioning block (510) is removed from the circular groove (521), and the anchor rod (620) respectively passes through the circular hole (522) at the bottom of the circular groove (521), the first insulation layer (100), and the second insulation layer (200) when the detachable positioning block (510) is removed from the circular groove (521) and extends out of the second insulation layer (200).