Wet etching device

Abstract

The utility model relates to a wet etching device, and relates to the technical field of semiconductor manufacturing, a bearing device is arranged in an etching cavity in the wet etching device, a plurality of clamping grooves distributed in a first direction are arranged on the bearing device, wafers are placed in the clamping grooves, and a first through hole is arranged at the bottom of each clamping groove. The first through hole is used for introducing gas so that the wafer can suspend in the etching solution, and after the wafer suspends, the wafer can make contact with the rotating shaft on the rotating device so that the wafer can rotate. The wafer is suspended in the etching solution, so that rotation is easier, the rotating wafer can be etched more uniformly in the etching solution, uneven etching is avoided, and the product quality is improved.

Description

TECHNICAL FIELD

[0001] The present application relates to the technical field of semiconductor manufacturing, in particular to a wet etching device. BACKGROUND

[0002] Wafer etching is one of the key links in semiconductor manufacturing, and its quality and efficiency directly affect the performance and reliability of the final product. With the continuous development and progress of technology, etching process is also constantly optimized and improved to meet the demand of higher performance and smaller size chip manufacturing.

[0003] In the existing wet etching process, the slot type wet etching process still occupies a large proportion. However, due to the uneven inlet flow rate of the slot etching process, the wafer etching is uneven, which seriously affects the quality of the final product.

[0004] Therefore, how to uniformly etch the wafer has become a technical problem to be solved by those skilled in the art. CONTENT OF THE INVENTION

[0005] Therefore, it is necessary to provide a wet etching device for the above problems.

[0006] In order to achieve the above purpose, the utility model provides a wet etching device, which comprises:

[0007] An etching cavity for containing etching solution;

[0008] A bearing device located in the etching cavity; the bearing device comprises a plurality of clamping grooves arranged in a first direction; the clamping grooves are located on one side of the bottom surface of the bearing device away from the etching cavity and used for placing wafers; the first direction is parallel to the bottom surface of the etching cavity, and the bottom of the clamping groove has a first through hole for passing in gas to make the wafer float;

[0009] A rotating device, the rotating device comprises a rotating shaft, the rotating shaft extends along the first direction and is perpendicular to the plane where the wafer is located, and is used for rotating the wafer.

[0010] In one embodiment, the bearing device further comprises a groove extending along the first direction, and the groove is an arc-shaped groove; the clamping groove is located on the inner wall of the groove.

[0011] In one embodiment, the bottom of the clamping groove further comprises a second through hole for passing in the etching solution.

[0012] In one embodiment, the first through hole and the second through hole are arranged alternately in a second direction, and the second direction is the extension direction of the clamping groove.

[0013] In one of the embodiments, the rotating device further comprises: a first limiting arm and a second limiting arm arranged oppositely, and the first limiting arm and the second limiting arm cooperate to limit the wafer.

[0014] The rotating shaft comprises a first sub-rotating shaft and a second sub-rotating shaft arranged oppositely; the first sub-rotating shaft is located at the end of the first limiting arm close to the wafer, and the second sub-rotating shaft is located at the end of the second limiting arm close to the wafer; the first sub-rotating shaft and the second sub-rotating shaft rotate the wafer together.

[0015] In one of the embodiments, the first sub-rotating shaft comprises a plurality of first protrusions arranged in the first direction in sequence, and the first protrusions have first clamping grooves therebetween, and the first clamping grooves are used to clamp the wafer.

[0016] The first clamping grooves are arranged one by one in the direction perpendicular to the bottom surface of the etching cavity and correspond to the clamping grooves.

[0017] In one of the embodiments, the wet etching device further comprises:

[0018] A first alignment device is arranged in the etching cavity and used to make the first clamping grooves correspond to the clamping grooves one by one.

[0019] In one of the embodiments, the second sub-rotating shaft comprises a plurality of second protrusions arranged in the first direction in sequence, and the second protrusions have second clamping grooves therebetween, and the second clamping grooves are used to clamp the wafer.

[0020] The second clamping grooves are arranged one by one in the direction perpendicular to the bottom surface of the etching cavity and correspond to the clamping grooves.

[0021] In one of the embodiments, the wet etching device further comprises:

[0022] A second alignment device is arranged in the etching cavity and used to make the second clamping grooves correspond to the clamping grooves one by one.

[0023] In one of the embodiments, the wet etching device further comprises:

[0024] A detection device is arranged on the rotating device and used to detect the rotating position of the wafer.

[0025] Compared with the prior art, the above technical solution has the following advantages:

[0026] In the wet etching device, an etching cavity is arranged for containing etching solution; and a supporting device is arranged in the etching cavity. The supporting device comprises a plurality of clamping grooves arranged in a first direction in sequence and located at a bottom surface of the supporting device away from the etching cavity, for placing wafers; and the first direction is parallel to the bottom surface of the etching cavity. The bottom of each clamping groove is provided with a first through hole for passing in gas to make the wafer suspended; and a rotating device is arranged, comprising a rotating shaft extending along the first direction and perpendicular to the plane of the wafer, for rotating the wafer.

[0027] In the wet etching device, an etching cavity is arranged for containing etching solution; and a supporting device is arranged in the etching cavity. The supporting device comprises a plurality of clamping grooves arranged in a first direction in sequence and located at a bottom surface of the supporting device away from the etching cavity, for placing wafers; and the first direction is parallel to the bottom surface of the etching cavity. The bottom of each clamping groove is provided with a first through hole for passing in gas to make the wafer suspended; and a rotating device is arranged, comprising a rotating shaft extending along the first direction and perpendicular to the plane of the wafer, for rotating the wafer. BRIEF DESCRIPTION OF DRAWINGS

[0028] In order to more clearly illustrate the technical solutions in the embodiments of the present application or the prior art, the drawings needed to be used in the embodiments or the prior art description will be briefly introduced. Obviously, the drawings in the following description are only some embodiments of the present application, and other drawings can be obtained by those skilled in the art without creative effort.

[0029] Figure 1 A partial top view structural schematic diagram of a wet etching device is provided for the embodiments of the present application;

[0030] Figure 2 A Figure 1 A structural schematic diagram of the wet etching device along the section of BB';

[0031] Figure 3 A Figure 1 A structural schematic diagram of the supporting structure along the section of AA';

[0032] Figure 4 A partial structural schematic diagram of a wet etching device is provided for the embodiments of the present application;

[0033] Figure 5 Another partial structural schematic diagram of a wet etching device is provided for the embodiments of the present application;

[0034] Figure 6 A structural schematic diagram of a rotating shaft is provided for the embodiments of the present application;

[0035] Figure 7 FIG. 8 is a schematic view of another part of a wet etching device according to an embodiment of the present application.

[0036] Reference signs: 01-etching cavity; 02-bearing device; 03-clamping groove; 04-wafer; 05-first through hole; 06-rotating device; 06a-first limiting arm; 06b-second limiting arm; 07-rotating shaft; 07a-first sub-rotating shaft; 07b-second sub-rotating shaft; 08-groove; 09-second through hole; 10-first protruding part; 11-first clamping groove; 12-second protruding part; 13-second clamping groove; 14-first alignment device; 15-second alignment device; 16-detecting device. DETAILED DESCRIPTION

[0037] In order to facilitate the understanding of the present application, a more comprehensive description of the present application will be made below with reference to the relevant drawings. The drawings show embodiments of the present application. However, the present application can be implemented in many different forms, and is not limited to the embodiments described herein. On the contrary, the purpose of providing these embodiments is to make the disclosure of the present application more thorough and comprehensive.

[0038] Unless otherwise defined, all technical and scientific terms used herein have the same meaning as commonly understood by one of ordinary skill in the art to which the present application belongs. The terminology used in the description of the present application herein only for the purpose of describing specific embodiments of the present application, and is not intended to limit the present application.

[0039] It should be understood that when a layer is referred to as being "on", "adjacent", "connected to" another layer, it can be directly on, adjacent to, or connected to the other layer, or an intervening layer can be present. Conversely, when an element is referred to as being "directly on", "directly adjacent to", or "directly connected to" another layer, there are no intervening layers present.

[0040] As used herein, the singular forms "a", "an" and "the" can also include the plural forms, unless the context clearly indicates otherwise. It should also be understood that the term "comprising" or "including" or "having" or the like specifies the presence of stated features, integers, steps, operations, components, parts, or combinations thereof, but does not preclude the presence or addition of one or more other features, integers, steps, operations, components, parts, or combinations thereof.

[0041] Based on the content in the background art, in the wet etching process, there are often two problems. The first problem is that because the inlet of the tank is at the bottom of the tank, the flow rate at the upper part of the tank is lower than that at the bottom, causing the etching rate at the bottom of the wafer to be faster than that at the upper part, thereby causing the overall etching of the wafer to be uneven. The second problem is that because the lower part of the wafer enters the tank first than the upper part of the wafer, after the etching process is completed, the lower part of the wafer leaves the tank later than the upper part of the wafer, causing the time for the lower part of the wafer to contact the chemical solution to be longer than the upper part, thereby aggravating the uneven etching of the wafer as a whole.

[0042] Based on this, the present application provides a wet etching device, which has a bearing device in the etching cavity in the wet etching device, a plurality of clamping grooves arranged in a first direction are arranged on the bearing device, and a wafer is placed in the clamping groove. The bottom of each clamping groove is provided with a first through hole. These first through holes are used to pass in gas to make the wafer suspended in the etching solution. When the wafer is suspended, it will contact the rotating shaft on the rotating device, so as to make the wafer rotate. The wafer suspended in the etching solution can make the rotation easier, and the rotating wafer can be etched more uniformly in the etching solution, avoiding uneven etching and improving the quality of the product.

[0043] In order to make the above-mentioned purposes, features and advantages of the present application more obvious and easy to understand, the present application will be further described in detail below with reference to the drawings and specific embodiments.

[0044] Reference Figure 1 , Figure 1 A partial top view structural schematic diagram of a wet etching device is provided for the embodiments of the present application; reference Figure 2 , Figure 2 For Figure 1 A structural schematic diagram of the wet etching device along the section of BB' is shown;

[0045] Reference Figure 3 , Figure 3 For Figure 1 A structural schematic diagram of the bearing structure along the section of AA' in the present application is shown; including:

[0046] An etching cavity 01 for containing etching solution.

[0047] A bearing device 02 is located in the etching cavity 01; the bearing device 02 includes a plurality of clamping grooves 03 arranged in a first direction M in sequence and at intervals, the clamping groove 03 is located on the side of the bottom surface of the bearing device 02 away from the etching cavity 01, and is used for placing a wafer 04; the first direction M is parallel to the bottom surface of the etching cavity 01, the bottom of the clamping groove 03 has a first through hole 05, and the first through hole 05 is used to pass in gas to make the wafer 04 suspended.

[0048] The rotating device 06 comprises a rotating shaft 07 extending along the first direction M and perpendicular to the plane where the wafer 04 is located, and is used to rotate the wafer 04.

[0049] Specifically, the wet etching is performed on the wafer 04 by using an etching solution, so the wet etching device comprises an etching cavity 01 used to contain the etching solution, and a bearing device 02 arranged in the etching cavity 01.

[0050] The bearing device 02 is provided with clamping grooves 03 arranged in the first direction M in sequence and at intervals on the side away from the bottom surface of the etching cavity 01, and the clamping grooves 03 are used to place the wafers 04 and separate the wafers 04 from each other, so that each wafer 04 can be etched in the wet etching device without interfering with each other.

[0051] The first through holes 05 are arranged at the bottom of the clamping grooves 03 and are used to pass in gas, and the gas can make the wafer 04 suspended in the etching solution. It should be noted that the number of the first through holes 05 is not limited, and the first through holes 05 can be uniformly arranged in the extension direction of the clamping grooves 03, so that the wafer 04 can be suspended more stably. It should be further noted that the gas passed into the first through holes 05 can be air or nitrogen.

[0052] When the wafer 04 is suspended, the rotating shaft 07 on the rotating device 06 will contact the wafer 04, and when the wafer 04 is etched, the motor is turned on and the rotating shaft 07 rotates, thereby driving the wafer 04 to rotate. At this time, the time length of each position of the wafer 04 contacting the etching solution is basically uniform, and the time length in the etching solution with different flow rates is also basically the same, so that the etching of the wafer 04 is more uniform, and the quality of the product is further improved.

[0053] Optionally, with reference to Figure 4 , Figure 4 A partial structure schematic diagram of a wet etching device provided by the embodiment of the present application; in another embodiment of the present application, the bearing device 02 further comprises a groove 08 extending along the first direction M, and the groove 08 is an arc-shaped groove; and the clamping groove 03 is located on the inner wall of the groove 08.

[0054] Specifically, the bearing device 02 can have a structure with the groove 08 extending along the first direction M, and the groove 08 is an arc-shaped groove, and the curvature of the arc-shaped groove 08 can match the wafer 04. At this time, the clamping groove 03 is arranged on the inner wall of the groove 08, and the first through holes 05 are uniformly arranged at the bottom of the clamping groove 03 along the extension direction of the clamping groove 03, that is, the gas passed into the first through holes 05 can uniformly blow to the wafer 04, thereby making the wafer 04 suspended.

[0055] It should be noted that the groove 08 can be half-wrapped around the edge of the wafer 04, or at least partially wrapped around the edge of the wafer 04, so that the wafer 04 can be suspended to facilitate rotation.

[0056] Optionally, in another embodiment of the present application, the bottom of the clamping groove 03 further comprises a second through hole 09 for introducing etching solution.

[0057] Specifically, the number of second through holes 09 is not specifically limited, and the second through holes 09 can be uniformly arranged along the bottom of the clamping groove 03. Since the etching solution is introduced into the etching cavity 01 from the second through hole 09, the flow rate of the etching solution at the bottom of the etching cavity 01 is faster, and at this time, the etching rate at the bottom is also faster. In order to uniformly etch the wafer 04, the wafer 04 can be rotated by at least 180 degrees, so that the upper side and the lower side of the wafer 04 are reversed, and the wafer 04 is uniformly etched by etching solution with different flow rates.

[0058] Optionally, as shown in Figure 4 , in another embodiment of the present application, the first through hole 05 and the second through hole 09 are alternately arranged in the second direction, and the second direction is the extension direction of the clamping groove 03.

[0059] Specifically, in the extension direction of the clamping groove 03, the first through hole 05 and the second through hole 09 are alternately arranged, and it should be noted that when the etching solution is introduced from the second through hole 09, the first through hole 05 introduces gas to suspend the wafer 04 while the etching solution rate is more uniform.

[0060] Optionally, referring to Figure 5 , Figure 5 is another part of the structure of the wet etching device provided in the embodiment of the present application; in another embodiment of the present application, the rotating device 06 further comprises: oppositely arranged first limiting arm 06a and second limiting arm 06b, the first limiting arm 06a and the second limiting arm 06b cooperate to limit the wafer 04.

[0061] The rotating shaft 07 comprises oppositely arranged first sub-rotating shaft 07a and second sub-rotating shaft 07b; the first sub-rotating shaft 07a is located at the end of the first limiting arm 06a close to the wafer 04, and the second sub-rotating shaft 07b is located at the end of the second limiting arm 06b close to the wafer 04; the first sub-rotating shaft 07a and the second sub-rotating shaft 07b rotate the wafer 04 together.

[0062] Specifically, the rotating device 06 further comprises a first limiting arm 06a and a second limiting arm 06b. The first limiting arm 06a and the second limiting arm 06b can be located above the bearing device 02 and cooperate to limit the suspended wafer 04, so that the position of the wafer 04 will not rise too much due to the entering gas. It should be noted that the positions of the first limiting arm 06a and the second limiting arm 06b are not specifically limited, and they can also be located on the two sides of the bearing device 02 in the etching cavity 01 respectively to ensure the position limitation of the wafer 04.

[0063] The rotating shaft 07 comprises a first sub-rotating shaft 07a and a second sub-rotating shaft 07b arranged oppositely. The first sub-rotating shaft 07a is connected to the end of the first limiting arm 06a close to the wafer 04, and the second sub-rotating shaft 07b is connected to the end of the second limiting arm 06b close to the wafer 04. The first sub-rotating shaft 07a and the second sub-rotating shaft 07b cooperate to rotate while limiting the wafer 04. It should be noted that the rotating shaft 07 can also be provided with multiple rotating shafts, which are not specifically limited and are only used as an example here. It should be further noted that the use of the rotating device 06 to limit and rotate the wafer 04 can improve the etching uniformity of the wafer 04.

[0064] Optionally, with reference to Figure 6 , Figure 6 a structure diagram of a rotating shaft provided by an embodiment of the present application. In another embodiment of the present application, the first sub-rotating shaft 07a comprises a plurality of first protruding portions 10 arranged in a first direction M in sequence. The first protruding portions 10 have first clamping grooves 11 therebetween, and the first clamping grooves 11 are used to clamp the wafer 04.

[0065] The first clamping grooves 11 are arranged in a one-to-one correspondence with the clamping grooves 03 in a direction perpendicular to the bottom surface of the etching cavity 01.

[0066] Specifically, the first sub-rotating shaft 07a extends in the first direction M to rotate a plurality of wafers 04 at the same time. The first sub-rotating shaft 07a comprises a plurality of first protruding portions 10 arranged in the first direction M in sequence. The plurality of first protruding portions 10 have first clamping grooves 11 therebetween, that is, a plurality of first clamping grooves 11 are arranged in the first direction M. When the wafer 04 is suspended, the first clamping grooves 11 will clamp the plurality of wafers 04. The first protruding portions 10 space the wafers 04 apart to prevent the wafers 04 from interfering with each other.

[0067] Optionally, in another embodiment of the present application, the wet etching device further comprises:

[0068] A first alignment device is located in the etching cavity 01 and is used to make the first clamping grooves 11 correspond to the clamping grooves 03 one by one.

[0069] Specifically, the first positioning device is located in the etching cavity 01. When the first sub-rotating shaft 07a has a plurality of first clamping grooves 11, the wafer 04 needs to be accurately clamped into the first clamping groove 11 after being suspended. At this time, the first positioning device is arranged to make the first clamping groove 11 correspond to the clamping groove 03 one by one, so as to ensure that the wafer 04 is also arranged at intervals after being suspended, and the etching uniformity is improved.

[0070] Optionally, in another embodiment of the present application, the second sub-rotating shaft 07b includes a plurality of second protruding portions 12 arranged in the first direction M in sequence, and the second protruding portions 12 have a second clamping groove 13 therebetween, and the second clamping groove 13 is used to clamp the wafer 04.

[0071] The second clamping groove 13 is arranged in the direction perpendicular to the bottom surface of the etching cavity 01 and corresponds to the clamping groove 03 one by one.

[0072] Specifically, the second sub-rotating shaft 07b extends in the first direction M to rotate the plurality of wafers 04 at the same time. The second sub-rotating shaft 07b includes a plurality of second protruding portions 12 arranged in the first direction M in sequence, and the plurality of second protruding portions 12 have a second clamping groove 13 therebetween, that is, the plurality of second clamping grooves 13 are arranged in the first direction M, and the second clamping groove 13 clamps the plurality of wafers 04 after the wafers 04 are suspended. The second protruding portion 12 separates the wafers 04 to prevent the wafers 04 from interfering with each other.

[0073] Optionally, in another embodiment of the present application, the wet etching device further comprises:

[0074] The second positioning device is located in the etching cavity 01 and is used to make the second clamping groove 13 correspond to the clamping groove 03 one by one.

[0075] Specifically, the second positioning device is located in the etching cavity 01. When the second sub-rotating shaft 07b has a plurality of second clamping grooves 13, the wafer 04 needs to be accurately clamped into the second clamping groove 13 after being suspended. At this time, the second positioning device is arranged to make the second clamping groove 13 correspond to the clamping groove 03 one by one, so as to ensure that the wafer 04 is also arranged at intervals after being suspended, and the etching uniformity is improved.

[0076] Reference Figure 7 , Figure 7 Another part of the structure of the wet etching device provided in the embodiment of the present application is shown in the figure. In an embodiment, the first positioning device 14 and the second positioning device 15 can be a sliding rail structure and are arranged on both sides of the bearing structure.

[0077] In another embodiment, the first and second alignment devices can be the position detecting device 16, which detects the position between the clamping slots 03 and the clamping slots 03, and adjusts the position of the rotating shaft 07 when the positions do not correspond, so as to ensure that the first clamping slots 11 correspond to the clamping slots 03 one by one, and the second clamping slots 13 correspond to the clamping slots 03 one by one.

[0078] Optionally, as shown in another embodiment of the present application, the wet etching device further comprises: Figure 7

[0079] The detecting device 16 is arranged on the rotating device 06 and is used to detect the rotating position of the wafer 04.

[0080] Specifically, the detecting device 16 can detect the alignment mark on the wafer 04, and the alignment mark can be directed to the bottom of the supporting device 02 when the wafer 04 is placed into the etching cavity 01. After the wafer 04 is rotated with the rotating shaft 07, in order to ensure that the upper part and the lower part of the wafer 04 are reversed, that is, the wafer 04 is rotated by 180 degrees or an odd multiple of 180 degrees, the detecting device 16 is arranged, which can detect the position of the alignment mark on the wafer 04. When the wet etching time reaches, the detecting device 16 detects the position of the alignment mark, so that the position of the alignment mark is reversely arranged with the position of the supporting device 02, so as to ensure that the wafer 04 is rotated by 180 degrees or an odd multiple of 180 degrees, that is, the etching is carried out at different etching rates, so that the etching of the wafer 04 is more uniform. Preferably, the wafer 04 can complete etching when it is rotated by 180 degrees.

[0081] After that, the switches of the first and second through holes 05 and 09 are slowly closed, and after the wafer 04 falls into the clamping slots 03, the rotating device 06 with the rotating shaft 07 is moved away, and finally the wafer is taken by the wafer taking robot.

[0082] The wet etching device makes the wafer 04 suspended and rotated in the etching solution, so that the wafer 04 can be etched more uniformly in the etching solution, avoiding uneven etching and improving the quality of the product.

[0083] In the description of the present application, the description of the terms "some embodiments", "another embodiment" and the like means that the specific features, structures, materials or characteristics described in combination with the embodiments or examples are contained in at least one embodiment or example of the present application. In the description of the present application, the illustrative description of the above terms does not necessarily refer to the same embodiment or example.

[0084] ​Any combination of the technical features in the above-described embodiments can be made, and for the sake of brevity, not all possible combinations are described, however, it is to be understood that the application encompasses all such possible combinations.

[0085] The above-described embodiments only express several implementation manners of the present application, and the description is relatively specific and detailed, but it should not be understood as a limitation on the patent scope of the application. It should be pointed out that for ordinary skilled persons in the art, some modifications and improvements can be made without departing from the concept of the present application, and these all belong to the protection scope of the present application. Therefore, the patent protection scope of the present application should be subject to the appended claims.

Claims

1. A wet etching apparatus characterized by comprising: The wet etching device comprises: an etching cavity for containing etching solution; a supporting device located in the etching cavity; the supporting device comprises a plurality of clamping grooves arranged in sequence in a first direction, the clamping grooves are located on the side of the bottom surface of the supporting device away from the etching cavity, and are used for placing a wafer; the first direction is parallel to the bottom surface of the etching cavity, and the bottom of the clamping groove has a first through hole for passing in gas to make the wafer float; a rotating device, the rotating device comprises a rotating shaft, the rotating shaft extends along the first direction and is perpendicular to the plane where the wafer is located, and is used for rotating the wafer.

2. The wet etching apparatus according to claim 1, wherein The supporting device further comprises a groove extending along the first direction, the groove is an arc-shaped groove; the clamping groove is located on the inner wall of the groove.

3. The wet etching apparatus of claim 1, wherein The bottom of the clamping groove further comprises a second through hole for passing in the etching solution.

4. The wet etching apparatus according to claim 3, wherein The first through hole and the second through hole are arranged in sequence and alternately in a second direction, and the second direction is the extension direction of the clamping groove.

5. The wet etching apparatus of claim 1, wherein The rotating device further comprises: oppositely arranged first and second limiting arms, the first and second limiting arms cooperate with each other to limit the wafer; the rotating shaft comprises oppositely arranged first and second sub-rotating shafts; the first sub-rotating shaft is located at the end of the first limiting arm close to the wafer, and the second sub-rotating shaft is located at the end of the second limiting arm close to the wafer; the first and second sub-rotating shafts rotate the wafer together.

6. The wet etching apparatus according to claim 5, wherein The first sub-rotating shaft comprises a plurality of first protrusions arranged in sequence in the first direction, and the first protrusions have first clamping grooves therebetween for clamping the wafer; The first clamping groove is arranged one by one corresponding to the clamping groove in the direction perpendicular to the bottom surface of the etching cavity.

7. The wet etching apparatus of claim 6, wherein The wet etching device further comprises: a first alignment device, the first alignment device is located in the etching cavity, and is used for making the first clamping groove correspond one by one to the clamping groove.

8. The wet etching apparatus of claim 5, wherein The second sub-rotating shaft comprises a plurality of second protrusions arranged in sequence in the first direction, and the second protrusions have second clamping grooves therebetween for clamping the wafer; The second clamping groove is arranged one by one corresponding to the clamping groove in the direction perpendicular to the bottom surface of the etching cavity.

9. The wet etching apparatus of claim 8, wherein The wet etching device further comprises: a second alignment device, the second alignment device is located in the etching cavity, and is used for making the second clamping groove correspond one by one to the clamping groove.

10. The wet etching apparatus of claim 1, wherein The wet etching device further comprises: a detection device located on the rotating device, and used for detecting the rotating position of the wafer.

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