Wafer bonding annealing device

Abstract

The utility model relates to a wafer bonding annealing device which comprises a vacuum cavity, a quartz tube which is horizontally placed is installed inside the vacuum cavity in a matched mode, the quartz tube is cylindrical and hollow inside, a bonding force applying mechanism is placed inside the quartz tube, and the bonding force applying mechanism limits and fixes a workpiece and applies bonding force. A heating wire is spirally wound on the outer circumferential surface of the quartz tube and is electrically connected with an external power supply through an electrode assembly; and the heating wire is electrified to heat, so that the temperature in the quartz tube is uniformly increased, and a workpiece fixed in the bonding force applying mechanism is further bonded. By arranging the heating wire with the variable pitch, the interior of the quartz tube can be uniformly heated, so that a workpiece in the quartz tube is uniformly heated, the wafer bonding effect is improved, and the reliability and the performance of a device are improved.

Description

TECHNICAL FIELD

[0001] The utility model relates to wafer packaging technical field especially a wafer bonding annealing device. BACKGROUND

[0002] Wafer bonding annealing is the key step in wafer packaging process, can ensure the firm bonding between wafer, provides stable foundation for subsequent packaging process, and wafer bonding annealing usually adopts wafer bonding annealing equipment to realize.

[0003] In prior art, the structure of wafer annealing equipment includes heating system for adjusting temperature, quartz tube for accommodating wafer to be annealed, adjusts the temperature inside quartz cavity through heating system, thereby realizing the bonding and annealing of wafer.But, because the heat dissipation of both ends of quartz tube is faster than the center part, when processing multiple groups of wafers, the problem of uneven heating is caused, leading to uneven stress distribution in wafer, thereby affecting wafer bonding effect, affecting the reliability and performance of device. UTILITY MODEL CONTENTS

[0004] The applicant provides a wafer bonding annealing device aiming at the above-mentioned shortcomings in prior production technology, by setting variable-pitch heating wire, the inside of quartz tube can be uniformly heated, thereby ensuring the uniform heating of workpiece inside quartz tube, improving wafer bonding effect, improving the reliability and performance of device, at the same time, by setting bonding force applying mechanism with bellows assembly, enough bonding force can be applied to workpiece during annealing process, thereby greatly improving the bonding strength between wafers.

[0005] The technical scheme adopted by the utility model is as follows:

[0006] A wafer bonding annealing device, comprising a vacuum cavity, a horizontally placed quartz tube is installed in the inside of the vacuum cavity, the quartz tube is cylindrical and hollow inside, a bonding force applying mechanism is placed in the inside of the quartz tube, the bonding force applying mechanism limits and fixes workpiece and applies bonding force, variable-pitch heating wire is spirally wound on the outer circumferential surface of the quartz tube, the heating wire is electrically connected with external power supply through electrode assembly;

[0007] The heating wire is electrified and heated, thereby making the temperature inside quartz tube uniformly rise, and then bonding workpiece fixed in the bonding force applying mechanism.

[0008] As further improvement of the above technical scheme:

[0009] The heating wire is helical, and the heating wire comprises a helical first section, a helical middle section and a helical tail section, the helical pitch of the helical middle section is greater than the helical pitch of the helical first section, and the helical pitch of the helical middle section is greater than the helical pitch of the helical tail section.

[0010] The helical pitch of the first section of the helix is equal to the helical pitch of the second section of the helix.

[0011] The inside of the quartz tube is fitted with a temperature measuring thermocouple for temperature measurement.

[0012] The structure of the key force applying mechanism comprises a bottom plate and a top plate arranged at intervals, a first movable plate and a second movable plate arranged at intervals are fitted between the bottom plate and the top plate, a plurality of guide columns are connected between the bottom plate and the top plate, the guide columns penetrate through the first movable plate to limit the first movable plate, the guide columns penetrate through the second movable plate to limit the second movable plate, a bellows assembly is fitted between the first movable plate and the second movable plate, a closed cavity is formed between the first movable plate, the second movable plate and the bellows assembly, the internal pressure of the closed cavity is kept at normal pressure, a plurality of connecting springs are fitted between the first movable plate and the bottom plate, and a workpiece is arranged between the first movable plate and the bottom plate, and the first movable plate is pressed against the workpiece under the action of the connecting springs.

[0013] The middle part of the top plate is fitted with an adjusting screw rod, the end of the adjusting screw rod abuts against the end face of the second movable plate, and a pressure difference is generated between the internal pressure of the closed cavity and the vacuum environment in the vacuum environment, so that the first movable plate applies a pushing force to the workpiece under the action of the pressure difference.

[0014] The structure of the bellows assembly comprises a first flange fixed with the first movable plate and a second flange fixed with the second movable plate, and the first flange and the second flange are connected by a welded bellows.

[0015] The outside of the quartz tube is fitted with a support seat, and the support seat supports the quartz tube.

[0016] The workpiece comprises a plurality of wafer assemblies, each wafer assembly comprises two stacked wafers, adjacent two wafer assemblies are separated by a ceramic partition plate, and positioning planes are arranged on the side walls of the wafer assemblies and the partition plate.

[0017] An access hole is formed in the top wall of the vacuum cavity, a top cover plate is fitted at the access hole, a through hole is formed in the side wall of the vacuum cavity, a side cover plate is hinged to the side wall of the vacuum cavity, a plurality of compression lock assemblies are fitted between the side cover plate and the vacuum cavity, and the side cover plate covers the through hole when the compression lock assemblies are all buckled.

[0018] A support sheet metal is fitted at the bottom of the vacuum cavity, the support sheet metal supports the vacuum cavity, and a touch display screen is fitted on the side wall of the vacuum cavity.

[0019] The beneficial effects of the utility model are as follows:

[0020] The utility model discloses compact structure, reasonable, convenient operation can be even heated to the inside of quartz tube to the quartz tube inside workpiece even heated, guarantee, improve wafer bonding effect, improve the reliability and performance of device, simultaneously, through setting up bellows subassembly, under the action of internal and external pressure difference, make the first movable plate and second movable plate produce the movement trend of apart, thereby make the first movable plate can stably exert enough bonding force to workpiece in annealing process, thereby greatly improve the bonding strength between wafer, and the structure design is reasonable, convenient and reliable. BRIEF DESCRIPTION OF DRAWINGS

[0021] Figure 1 It is the structure schematic diagram of the utility model.

[0022] Figure 2 It is the partial section of the utility model Figure 1 .

[0023] Figure 3 It is the partial section of the utility model Figure 2 .

[0024] Figure 4 It is the installation structure schematic diagram of quartz tube and heating wire in the utility model.

[0025] Figure 5 It is the structure schematic diagram of bonding force exerting mechanism in the utility model.

[0026] Figure 6 It is the structure schematic diagram of bellows subassembly in the utility model.

[0027] Figure 7 It is the structure schematic diagram of workpiece in the utility model.

[0028] Among them: 1, vacuum cavity, 2, top cover plate, 3, side cover plate, 4, support sheet metal, 5, touch display screen, 6, compression lock catch subassembly, 7, handle, 8, quartz tube, 9, bonding force exerting mechanism, 10, workpiece, 11, support seat, 12, heating wire, 13, electrode subassembly, 14, temperature measuring thermocouple,

[0029] 901, first movable plate, 902, second movable plate, 903, bottom plate, 904, top plate, 905, guide column, 906, adjusting screw, 907, adjusting nut, 908, bellows subassembly, 909, connecting spring, 910, limit block,

[0030] 9081, first flange, 9082, second flange, 9083, welded bellows,

[0031] 1001, wafer subassembly, 1002, partition, 1003, positioning plane,

[0032] 1201, the first section of the spiral; 1202, the middle section of the spiral; 1203, the last section of the spiral. DETAILED DESCRIPTION

[0033] The specific implementation of the present utility model will be described below with reference to the accompanying drawings.

[0034] The structure and functions of this utility model are as follows:

[0035] like Figures 1-7 As shown, a wafer bonding annealing device includes a vacuum chamber 1, in which a horizontally placed quartz tube 8 is mounted. The quartz tube 8 is cylindrical and hollow, and a bonding force applying mechanism 9 is placed inside the quartz tube 8. The bonding force applying mechanism 9 limits and fixes a workpiece 10 and applies a bonding force. A heating wire 12 with a variable pitch is spirally wound around the outer circumference of the quartz tube 8. The heating wire 12 is electrically connected to an external power source via an electrode assembly 13. When the heating wire 12 is energized, it generates heat, thereby uniformly increasing the temperature inside the quartz tube 8, thereby bonding the workpiece 10 fixed in the bonding force applying mechanism 9. The provision of the heating wire 12 enables uniform heating of the interior of the quartz tube 8, thereby ensuring that the workpiece 10 inside the quartz tube 8 is heated evenly.

[0036] like Figures 3-4 As shown, the heating filament 12 is spiral-shaped and includes a first spiral section 1201, a middle spiral section 1202, and a last spiral section 1203. The spiral pitch of the middle spiral section 1202 is greater than the spiral pitch of the first spiral section 1201, and the spiral pitch of the middle spiral section 1202 is greater than the spiral pitch of the last spiral section 1203. The spiral pitch of the first spiral section 1201 is equal to the spiral pitch of the last spiral section 1203. In addition, the length of the first spiral section 1201 and the last spiral section 1203 are the same. By providing a heating filament 12 with a variable pitch, the heating effect of the heating filament 12 on both ends of the quartz tube 8 can be improved, thereby compensating for the uneven heat dissipation problem of the quartz tube 8 and ensuring a uniform temperature inside the quartz tube 8.

[0037] A thermocouple 14 for measuring temperature is installed inside the quartz tube 8. The thermocouple 14 is used to measure the real-time temperature inside the quartz tube 8.

[0038] The structure of the bonding force applying mechanism 9 comprises a bottom plate 903 and a top plate 904 arranged in parallel, a first movable plate 901 and a second movable plate 902 arranged in parallel and installed between the bottom plate 903 and the top plate 904, a plurality of guide columns 905 connecting the bottom plate 903 and the top plate 904, the guide columns 905 penetrating the first movable plate 901 to limit the first movable plate 901, the guide columns 905 penetrating the second movable plate 902 to limit the second movable plate 902, a bellows assembly 908 installed between the first movable plate 901 and the second movable plate 902, a sealed cavity formed between the first movable plate 901, the second movable plate 902 and the bellows assembly 908, the pressure inside the sealed cavity being kept at normal pressure, a plurality of connecting springs 909 installed between the first movable plate 901 and the bottom plate 903, the workpiece 10 being placed between the first movable plate 901 and the bottom plate 903, and the first movable plate 901 pressing the workpiece 10 under the action of the connecting springs 909; a regulating screw 906 installed in the middle of the top plate 904, the end of the regulating screw 906 abutting against the end face of the second movable plate 902, and a pressure difference being generated between the pressure inside the sealed cavity and the vacuum environment under the vacuum environment, so that the first movable plate 901 applies a pushing force to the workpiece 10 under the action of the pressure difference. After the workpiece 10 is pressed by the bonding force applying mechanism 9, the bonding force applying mechanism 9 is horizontally placed in the quartz tube 8. In order to ensure that the axis of the regulating screw 906 coincides with the axis of the quartz tube 8, a plurality of convex blocks extending radially outward are arranged on the outer side walls of the bottom plate 903 and the top plate 904. When the bonding force applying mechanism 9 is placed horizontally, the convex blocks support the inner side walls of the quartz tube 8, so as to ensure that the bonding force applying mechanism 9 is placed stably and the axis of the regulating screw 906 coincides with the axis of the quartz tube 8, thereby improving the heating uniformity of the workpiece 10.

[0039] In addition, the axis of the regulating screw 906 coincides with the axis of the bellows assembly 908, which can ensure that the workpiece 10 is uniformly stressed.

[0040] The regulating screw 906 is installed in the top plate 904 through a regulating nut 907, which can improve the connection stability between the regulating screw 906 and the top plate 904.

[0041] As shown in Figure 6 The structure of the bellows assembly 908 comprises a first flange 9081 fixed to the first movable plate 901 and a second flange 9082 fixed to the second movable plate 902, and the first flange 9081 and the second flange 9082 are connected by a welded bellows 9083. The first flange 9081 is sealingly installed on the first movable plate 901, and the second flange 9082 is sealingly installed on the second movable plate 902, so that the first movable plate 901 and the second movable plate 902 sealingly weld the two ends of the welded bellows 9083, and the space inside the welded bellows 9083 forms a sealed cavity.

[0042] The welded bellows 9083 uses a metal bellows that can be compressed or stretched under external force.

[0043] The outer portion of the quartz tube 8 is fitted with a support base 11, which supports the quartz tube 8. The support base 11 is made of quartz material, which is resistant to high temperatures and corrosion, and has good light transmittance, and can ensure the stability and safety of the wafer during the annealing and bonding process.

[0044] like Figure 7 As shown, the workpiece 10 includes an array of wafer assemblies 1001. A single wafer assembly 1001 includes two stacked wafers. Adjacent wafer assemblies 1001 are separated by a ceramic partition 1002. Positioning planes 1003 are provided on the sidewalls of the wafer assemblies 1001 and the partition 1002. The positioning planes 1003 correspond to the stop blocks 910. When the bonding force applying mechanism 9 fixes the workpiece 10 and places it horizontally in the quartz tube 8, the stop blocks 910 align with the positioning planes 1003, thereby supporting the workpiece 10 from below and preventing the workpiece 10 from shifting during the bonding annealing process.

[0045] The top wall of the vacuum chamber 1 has an access hole, which is fitted with a top cover 2. A through hole is provided on the side wall of the vacuum chamber 1, to which a side cover 3 is hingedly connected. An array of compression lock assemblies 6 are fitted between the side cover 3 and the vacuum chamber 1. When all compression lock assemblies 6 are engaged, the side cover 3 covers the through hole. A handle 7 is also fitted on the side cover 3. The operator pulls the handle 7 to open the side cover 3, thereby facilitating access to the workpiece 10.

[0046] A vacuum port is also provided on the wall of the vacuum chamber 1 , which is connected to an external negative pressure source through an air pipe assembly for vacuuming the interior of the vacuum chamber 1 .

[0047] A support sheet metal 4 is mounted on the bottom of the vacuum chamber 1, supporting the chamber 1. A touch screen display 5 is mounted on the sidewall of the chamber 1. A control system is mounted inside the support sheet metal 4 and electrically connected to an external power source. The control system is also electrically connected to the touch screen display 5, which is used for human-computer interaction. The operator can control the start or stop of the external power source through the touch screen display 5.

[0048] In the present invention, the electrode assembly 13 includes a positive electrode and a negative electrode. The positive electrode is connected to one end of the heating wire 12 through a first wire, and the negative electrode is connected to the other end of the heating wire 12 through a second wire.

[0049] The working process of this utility model is as follows:

[0050] Firstly, the operator unlocks the compression lock assembly 6, opens the side cover plate 3 through the handle 7, and takes out the bonding force applying mechanism 9 from the vacuum cavity 1;

[0051] The bonding force applying mechanism 9 is first placed vertically, then the connecting spring 909 is removed, and then the knob adjusting screw 906 is adjusted, so that the workpiece 10 can be placed between the first movable plate 901 and the bottom plate 903;

[0052] Subsequently, the first movable plate 901 is manually pushed to move linearly along the axis of the guide column 905 away from the bottom plate 903, the workpiece 10 is placed on the bottom plate 903, and the workpiece 10 is positioned by the limiting block 910 to ensure the accurate placement position of the workpiece 10;

[0053] Then, the connecting spring 909 is installed, so that one end of the single connecting spring 909 is connected with the first movable plate 901, and the other end is connected with the bottom plate 903, so that the first movable plate 901 can compress the workpiece 10;

[0054] Next, the knob adjusting screw 906 is reversed, so that the end of the adjusting screw 906 tightly presses the second movable plate 902, and during the process of fixing the workpiece 10 by the bonding force applying mechanism 9, the distance between the first movable plate 901 and the second movable plate 902 is kept unchanged (which can be realized by setting scale lines on the guide column 905), so as to ensure that the volume of the sealed cavity is unchanged;

[0055] Finally, the operator places the bonding force applying mechanism 9 with the workpiece 10 horizontally in the quartz tube 8, after placing, the side cover plate 3 is closed, the vacuum cavity 1 is evacuated, when the internal environment pressure of the vacuum cavity 1 reaches the set vacuum degree, the external power supply is started to drive the heating wire 12 to heat, the internal temperature of the quartz tube 8 is uniformly raised by the heating wire 12 and stabilized in the wafer bonding required temperature range;

[0056] At the same time, the vacuum environment in the vacuum cavity 1 causes a pressure difference of about one atmosphere between the inside and outside of the sealed cavity, under the action of the pressure difference, the first movable plate 901 and the second movable plate 902 have a tendency to move away from each other, so that the first movable plate 901 can generate a pushing force on the workpiece 10, and then increase the compression force of the first movable plate 901 on the workpiece 10, so as to meet the requirement of the workpiece 10 on the bonding force;

[0057] After the bonding is completed, the external power supply changes the output current, so as to adjust the internal temperature of the quartz tube 8 through the heating wire 12, and stabilize the internal temperature of the quartz tube 8 in the wafer annealing required temperature range, after the annealing is completed, the temperature is cooled, and the bonding and annealing treatment of the workpiece 10 is completed.

[0058] The above description is an explanation of the present application, not a limitation of the present application, and the scope of the present application is defined in the claims. Any modification can be made within the scope of the present application.

Claims

1. A wafer bond anneal apparatus, comprising: The application relates to a vacuum chamber (1) which is internally fitted with a horizontally placed quartz tube (8) in a cylindrical shape and internally hollow, a bonding force applying mechanism (9) is placed in the quartz tube (8), the bonding force applying mechanism (9) limits and fixes a workpiece (10) and applies a bonding force, a variable-pitch heating wire (12) is spirally wound on the outer circumferential surface of the quartz tube (8), and the heating wire (12) is electrically connected with an external power supply through an electrode assembly (13). The heating wire (12) is electrified to generate heat, so that the temperature inside the quartz tube (8) is uniformly increased, and then the workpiece (10) fixed in the bonding force applying mechanism (9) is bonded.

2. A wafer bond anneal apparatus as claimed in claim 1, wherein: The heating wire (12) is in a spiral shape, and the heating wire (12) comprises a spiral initial section (1201), a spiral middle section (1202) and a spiral tail section (1203), the spiral pitch of the spiral middle section (1202) is greater than the spiral pitch of the spiral initial section (1201), and the spiral pitch of the spiral middle section (1202) is greater than the spiral pitch of the spiral tail section (1203).

3. A wafer bond anneal apparatus as claimed in claim 2, wherein: The spiral pitch of the spiral initial section (1201) is equal to the spiral pitch of the spiral tail section (1203).

4. A wafer bond anneal apparatus as recited in claim 1, wherein: The quartz tube (8) is internally fitted with a temperature measuring thermocouple (14) for temperature measurement.

5. A wafer bond anneal apparatus as claimed in claim 1, wherein: The bonding force applying mechanism (9) comprises a bottom plate (903) and a top plate (904) which are arranged at intervals, a first movable plate (901) and a second movable plate (902) which are arranged at intervals are fitted and arranged between the bottom plate (903) and the top plate (904), a plurality of guide columns (905) are connected between the bottom plate (903) and the top plate (904), the guide columns (905) penetrate through the first movable plate (901) to limit the first movable plate (901), the guide columns (905) penetrate through the second movable plate (902) to limit the second movable plate (902), a bellows assembly (908) is fitted and arranged between the first movable plate (901) and the second movable plate (902), a closed cavity is formed between the first movable plate (901), the second movable plate (902) and the bellows assembly (908), the internal pressure of the closed cavity is kept at normal pressure, a plurality of connecting springs (909) are fitted and arranged between the first movable plate (901) and the bottom plate (903), the workpiece (10) is placed between the first movable plate (901) and the bottom plate (903), and the first movable plate (901) is pressed against the workpiece (10) under the action of the connecting springs (909). The middle part of the top plate (904) is fitted with an adjusting screw rod (906), the end of the adjusting screw rod (906) abuts against the end face of the second movable plate (902), a pressure difference is generated between the internal pressure of the closed cavity and the vacuum environment in the vacuum environment, so that the first movable plate (901) applies a pushing force to the workpiece (10) under the action of the pressure difference.

6. A wafer bond anneal apparatus as claimed in claim 5, wherein: The corrugated pipe assembly (908) is structured as: comprising a first flange (9081) fixed with the first movable plate (901), and a second flange (9082) fixed with the second movable plate (902), the first flange (9081) and the second flange (9082) are connected through the welded corrugated pipe (9083).

7. A wafer bond anneal apparatus as claimed in claim 1, wherein: The outer part of the quartz tube (8) is matched with a supporting seat (11), and the supporting seat (11) supports the quartz tube (8).

8. A wafer bond anneal apparatus as recited in claim 1, wherein: The workpiece (10) comprises a plurality of wafer assemblies (1001), each wafer assembly (1001) comprises two stacked wafers, and adjacent wafer assemblies (1001) are separated by a ceramic partition plate (1002); the wafer assembly (1001) and the side wall surface of the partition plate (1002) are provided with a positioning plane (1003).

9. A wafer bond anneal apparatus as claimed in claim 1, wherein: A top cover plate (2) is matched and installed at the maintenance hole of the top wall surface of the vacuum cavity (1), a through hole is formed in the side wall surface of the vacuum cavity (1), a side cover plate (3) is hinged to the side wall surface of the vacuum cavity (1), a plurality of compression lock assemblies (6) are matched and installed between the side cover plate (3) and the vacuum cavity (1), and the side cover plate (3) covers the through hole when the compression lock assemblies (6) are all buckled.

10. A wafer bond anneal apparatus as claimed in claim 1, wherein: A supporting metal plate (4) is matched and installed at the bottom of the vacuum cavity (1), the supporting metal plate (4) supports the vacuum cavity (1), and a touch display screen (5) is matched and installed on the side wall surface of the vacuum cavity (1).

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