Power module and electric control board
By designing an isolated conductive area between the package shell and the substrate on the control board, and integrating packaged IGBTs and diodes, the problem of difficult layout of Boost PFC circuits is solved, miniaturization and efficient heat dissipation are achieved, and the production efficiency of the control board is improved.
Patent Information
- Application Number
- CN202423045581.9
- Authority / Receiving Office
- CN · China
- Patent Type
- Utility models(China)
- Current Assignee / Owner
- Filing Date
- 2024-12-10
- Publication Date
- 2025-10-28
- Estimated Expiration
- 2034-12-10
AI Technical Summary
In the layout of the Boost PFC circuit on the electronic control board, the IGBT module and FRD are set up separately as discrete devices, which occupies a large area and increases the routing distance, making the layout difficult and reducing production efficiency.
The package shell and substrate design is adopted, and multiple isolated conductive areas are set on the substrate. The IGBTs and diodes are arranged on the conductive areas respectively and electrically connected to the conductive areas through pins to form an integrated packaged power module, which reduces the occupied area and improves the power density and heat dissipation capacity.
It achieves the miniaturization of power modules, improves power density and heat dissipation capacity, reduces the difficulty of layout on the electronic control board, improves electromagnetic compatibility performance, and is easy to install.
Smart Images
Figure CN223487059U_ABST
Abstract
Description
Technical Field
[0001] This application relates to the field of power electronic devices, and more particularly to a power module and an electronic control board. Background Technology
[0002] To improve the power factor of AC power supplies, power factor correction (PFC) circuits are typically installed on the control boards of AC-powered equipment. PFC circuits come in various forms, such as Boost PFC circuits and totem-pole PFC circuits. Specifically, a Boost PFC circuit includes an inductor, an insulated-gate bipolar transistor (IGBT) module, and a fast recovery diode (FRD). When the IGBT module is on, the inductor stores energy; when the IGBT module is off, the inductor discharges to the device through the FRD. The Boost PFC circuit improves the power factor by controlling the on / off state of the IGBT module.
[0003] In related technologies, the layout of Boost PFC circuits on the control board typically employs a scheme where IGBT modules and FRDs are set up as discrete components. Setting up IGBT modules and FRDs as discrete components occupies a large layout area on the control board and increases the trace distance. Since the Boost PFC circuit also includes large-volume components such as inductors and filter capacitors, it leads to difficulties in the layout of the PFC circuit on the control board and low production efficiency of the control board. Utility Model Content
[0004] In view of this, embodiments of this application provide a power module and an electronic control board, which aim to provide a high-power-density IGBT and diode integrated package module.
[0005] The technical solution of this application embodiment is implemented as follows:
[0006] In a first aspect, embodiments of this application provide a power module, the power module comprising:
[0007] A package housing, on which multiple pins are provided;
[0008] A substrate is disposed within the packaging housing, and a plurality of mutually isolated conductive areas are disposed on the substrate;
[0009] A first diode is disposed on a first conductive region of the substrate;
[0010] A power device unit includes an IGBT and a second diode, wherein the IGBT and the second diode are arranged on a second conductive region;
[0011] Each of the plurality of pins is electrically connected to one of the plurality of conductive regions.
[0012] In some implementations, the plurality of pins includes a first pin, a second pin, a third pin, a fourth pin, and a fifth pin arranged sequentially.
[0013] The plurality of conductive regions further includes a third conductive region, a fourth conductive region, and a fifth conductive region;
[0014] Wherein, the first pin is electrically connected to the third conductive region; the second pin is electrically connected to the fourth conductive region; the third pin is electrically connected to the second conductive region; the fourth pin is electrically connected to the fifth conductive region; and the fifth pin is electrically connected to the first conductive region.
[0015] In some implementations, the cathode of the first diode is electrically connected to the first conductive region, and the anode of the first diode is electrically connected to the fifth conductive region; the collector of the IGBT and the cathode of the second diode are connected to the second conductive region, the emitter of the IGBT and the anode of the second diode are electrically connected to the fourth conductive region; and the gate of the IGBT is electrically connected to the third conductive region.
[0016] In some implementations, the first conductive region and the fifth conductive region are disposed close to each other, and the second conductive region, the third conductive region and the fourth conductive region are disposed close to each other.
[0017] In some implementations, the spacing between the first pin and the second pin is greater than the spacing between the fifth pin and the first pin, and the spacing between the third pin and the fourth pin, respectively; the spacing between the second pin and the third pin is greater than the spacing between the fifth pin and the first pin, and the spacing between the third pin and the fourth pin, respectively.
[0018] In some implementations, the first diode is a fast recovery diode (FRD).
[0019] In some implementations, the power device unit is a reverse-conducting IGBT (RC-IGBT) module.
[0020] In some implementations, the second diode is a fast recovery diode.
[0021] In some implementations, the package housing and the substrate adopt the TO247 package structure size.
[0022] In some embodiments, the substrate is a copper-clad ceramic substrate.
[0023] Secondly, embodiments of this application provide an electronic control board on which power modules as described in the first aspect are arranged.
[0024] This application provides a power module comprising: a package housing, a substrate, a first diode, and a power device unit. The package housing has multiple pins; the substrate is disposed within the package housing and has multiple mutually isolated conductive regions on it; the first diode is disposed on a first conductive region of the substrate; the power device unit includes an IGBT and a second diode, which are disposed on a second conductive region; each of the multiple pins is electrically connected to one of the multiple conductive regions. Thus, the power module of this application has multiple electrically isolated conductive regions on its substrate, and the IGBT and diode are integrated and packaged after being disposed on the conductive regions. The packaged power device has advantages such as small size, high power density, strong heat dissipation, and strong electromagnetic compatibility performance, and is easy to install on an electronic control board, reducing the layout difficulty of the PFC circuit on the electronic control board. Attached Figure Description
[0025] Figure 1 This is a schematic diagram of the device layout of a power module according to an embodiment of this application;
[0026] Figure 2 This is a schematic diagram of the circuit structure of the power module in an embodiment of this application;
[0027] Figure 3 This is a schematic diagram of the device layout of a power module according to another embodiment of this application;
[0028] Figure 4 This is a schematic diagram showing the dimensions of the power module in an embodiment of this application;
[0029] Figure 5 This is a schematic diagram of the power module packaged according to an embodiment of this application;
[0030] Figure 6 This is a schematic diagram of the assembly of the electronic control board according to an embodiment of this application.
[0031] Explanation of reference numerals in the attached figures:
[0032] 100. Power module; 110. Package housing; 120. Substrate; 131. First diode;
[0033] 132, Second diode; 133, IGBT; 141, First pin; 142, Second pin;
[0034] 143. Third pin; 144. Fourth pin; 145. Fifth pin; 151. First conductive area;
[0035] 152. Second conductive region; 153. Third conductive region; 154. First and fourth conductive regions;
[0036] 155. Fifth conductive area; 200. Electronic control board; 301. Bracket; 302. Heat sink. Detailed Implementation
[0037] The present application will now be described in further detail with reference to the accompanying drawings and embodiments.
[0038] Unless otherwise defined, all technical and scientific terms used herein have the same meaning as those commonly understood by those skilled in the art to which this application pertains. The terms used herein in the specification of this application are for the purpose of describing specific embodiments only and are not intended to limit this application.
[0039] In the description of this application, it should be noted that, unless otherwise explicitly specified and limited, the terms "installation," "connection," "linking," etc., should be interpreted broadly. For example, "connection" can be a fixed connection, a detachable connection, or an integral connection; it can be a mechanical connection or an electrical connection; it can be a direct connection or an indirect connection through an intermediate medium; it can be a connection within two components. Those skilled in the art can understand the specific meaning of the above terms in this application based on the specific circumstances.
[0040] This application provides a power module, such as... Figure 1 As shown, the power module 100 includes: a package housing 110, a substrate 120, a first diode 131, and a power device unit. The package housing 110 has multiple pins. The substrate 120 is disposed within the package housing 110, and has multiple mutually isolated conductive regions on the substrate 120. The first diode 131 is disposed on a first conductive region 151 of the substrate 120. The power device unit includes an IGBT 133 and a second diode 132, which are disposed on a second conductive region 152. Each of the multiple pins is electrically connected to one of the multiple conductive regions.
[0041] For example, such as Figure 1 As shown, the multiple conductive regions also include a third conductive region 153, a fourth conductive region 154, and a fifth conductive region 155.
[0042] For example, substrate 120 is a copper-clad ceramic substrate.
[0043] Here, based on the Direct Bonded Cooper (DBC) process, copper foil is directly sintered onto the surface of the ceramic substrate at a high temperature, forming multiple mutually isolated conductive regions. Since the copper-clad ceramic substrate has advantages such as high strength, high thermal conductivity, and high insulation, this embodiment uses a copper-clad ceramic substrate to arrange the first diode 131, the second diode 132, and the IGBT 133, thereby improving electrical insulation performance and heat dissipation performance of the device.
[0044] For example, the plurality of pins includes a first pin 141, a second pin 142, a third pin 143, a fourth pin 144, and a fifth pin 145 arranged sequentially. The first pin 141 is electrically connected to a third conductive region 153; the second pin 142 is electrically connected to a fourth conductive region 154; the third pin 143 is electrically connected to a second conductive region 152; the fourth pin 144 is electrically connected to a fifth conductive region 155; and the fifth pin 145 is electrically connected to a first conductive region 151.
[0045] Here, the five pins are connected to different conductive areas, and the multiple pins are electrically connected but electrically isolated from each other.
[0046] The first pin 141 is electrically connected to the third conductive region 153; the second pin 142 is electrically connected to the fourth conductive region 154; the third pin 143 is electrically connected to the second conductive region 152; the fourth pin 144 is electrically connected to the fifth conductive region 155; and the fifth pin 145 is electrically connected to the first conductive region 151.
[0047] Understandably, the power module 100 has five corresponding pins for each of the five terminals. Each pin is connected to the input, output, or drive terminal of an internal device of the power module 100. Specifically, pin 141 is electrically connected to the gate terminal G, pin 142 is electrically connected to the emitter terminal E, pin 143 is electrically connected to the collector terminal C, pin 144 is electrically connected to the anode terminal A, and pin 145 is electrically connected to the cathode terminal K. The packaged power module 100 connects to other devices based on these five pins.
[0048] It should be noted that, in order to achieve corresponding connections between each pin and the input, output, or drive terminal of the internal device of the power module 100, in this embodiment, the cathode of the first diode 131 is electrically connected to the first conductive region 151, and the anode of the first diode 131 is electrically connected to the fifth conductive region 155; the collector of the IGBT 133 and the cathode of the second diode 132 are connected to the second conductive region 152, the emitter of the IGBT 133 and the anode of the second diode 132 are electrically connected to the fourth conductive region 154; and the gate of the IGBT 133 is electrically connected to the third conductive region 153.
[0049] Here, since the first diode 131 is arranged on the first conductive region 151 of the substrate 120, the cathode of the first diode 131 is directly connected to the copper foil of the first conductive region 151, so that the cathode terminal K is electrically connected to the fifth pin 145; since the IGBT 133 and the second diode 132 are arranged on the second conductive region 152, the collector of the IGBT 133 and the cathode of the second diode 132 are directly connected to the copper foil of the second conductive region 152, so that the collector terminal C is electrically connected to the third pin 143.
[0050] Here, by setting a jumper wire on the wafer of the first diode 131, the anode of the first diode 131 is electrically connected to the fifth conductive region 155, thereby achieving an electrical connection between the anode A and the fourth pin 144; by setting a jumper wire on the wafer of the IGBT 133 and the wafer of the second diode 132, the emitter of the IGBT 133 and the anode of the second diode 132 are electrically connected to the fourth conductive region 154, and the gate of the IGBT 133 is electrically connected to the third conductive region 153, thereby achieving an electrical connection between the emitter E and the second pin 142, and an electrical connection between the gate G and the first pin 141.
[0051] For example, the first conductive region 151 and the fifth conductive region 155 are disposed close to each other, and the second conductive region 152, the third conductive region 153 and the fourth conductive region 154 are disposed close to each other.
[0052] Understandably, since the wafer of the first diode 131 needs to be electrically connected to the fifth conductive region 155 through a jumper wire, and the wafers of the IGBT 133 and the second diode 132 need to be electrically connected to the third conductive region 153 and the fourth conductive region 154 through jumper wires, the first conductive region 151 and the fifth conductive region 155 are arranged close to each other, and the second conductive region 152, the third conductive region 153 and the fourth conductive region 154 are arranged close to each other to shorten the trace distance.
[0053] Here, based on the arrangement order of the first pin 141, the second pin 142, the third pin 143, the fourth pin 144, and the fifth pin 145, the third conductive region 153, the fourth conductive region 154, the second conductive region 152, the fifth conductive region 155, and the first conductive region 151 are arranged in sequence.
[0054] It should be noted that if the power module 100 of this application embodiment is applied to a PFC circuit, based on the circuit structure of the PFC circuit, the anode of the first diode 131, the collector of the IGBT 133, and the cathode of the second diode 132 are all connected to the inductor of the PFC circuit, that is, the anode of the first diode 131, the collector of the IGBT 133, and the cathode of the second diode 132 are at the same potential; considering the impact of the power module 100 on the electromagnetic compatibility performance of the IGBT 133 after packaging, this application embodiment does not connect the collector terminal C and the anode terminal A inside the power module 100.
[0055] It is understood that the power module 100 of this application embodiment has multiple electrically isolated conductive areas on its substrate 120. The power device unit and the first diode 131 are respectively arranged in the conductive areas and then integrated and packaged. The packaged power device has advantages such as small size, high power density, strong heat dissipation and strong electromagnetic compatibility performance. It is easy to install on the control board and reduces the layout difficulty of the PFC circuit on the control board.
[0056] In some embodiments, the power device unit is a reverse-conducting IGBT (RC-IGBT) module 134.
[0057] Here, the IGBT 133 and the second diode 132 are pre-packaged into an RC-IGBT module 134, as shown below. Figure 3 As shown, the RC-IGBT module 134 is arranged on the substrate 120.
[0058] In some embodiments, such as Figure 1 As shown, the IGBT 133 and the second diode 132 are arranged as discrete devices on the substrate 120.
[0059] For example, if the second diode 132 is a discrete device, then the second diode 132 is a fast recovery diode (FRD).
[0060] It is understandable that FRD has the advantages of good switching characteristics and short reverse recovery time. In the embodiments of this application, whether the RC-IGBT module 134 with built-in freewheeling diode is used, or the FRD is used as the freewheeling diode of IGBT 133, and the power module 100 sets the second diode 132 as the freewheeling diode of IGBT 133, the reverse recovery time of IGBT 133 can be shortened, the switching loss of IGBT 133 can be reduced, and the anti-interference performance of IGBT 133 can be improved.
[0061] It should be noted that when the power module 100 of this application embodiment is applied to the PFC circuit, the anode of the first diode 131 is connected to the inductor, and the cathode of the first diode 131 is connected to the load. When the PFC circuit is running, the current through the inductor changes periodically. In order to improve the reverse recovery capability of the first diode 131, in some embodiments, the first diode 131 is an FRD.
[0062] It should be noted that, in order to enhance the electrical isolation between the pins, in this embodiment of the application, the spacing between adjacent pins of the power module 100 is greater than a set spacing, so as to avoid accidental soldering problems during the production of the power module 100.
[0063] In one application example of this application, the spacing between adjacent pins of the power module 100 is greater than 1.6 mm.
[0064] Here, to further enhance the electrical isolation effect, for example, such as Figure 4 As shown, the distance e2 between the first pin 141 and the second pin 142 is greater than the distance e1 between the fifth pin 145 and the first pin 141 and the distance e3 between the second pin 142 and the third pin 143, respectively; the distance e4 between the third pin 143 and the fourth pin 144 is greater than the distance e1 between the fifth pin 145 and the first pin 141 and the distance e3 between the second pin 142 and the third pin 143, respectively.
[0065] It should be noted that, since the first pin 141 is connected to the emitter terminal E and the second pin 142 is connected to the collector terminal C, the distance e2 between the first pin 141 and the second pin 142 is increased to ensure electrical isolation in order to avoid a connection between the collector and emitter of the IGBT 133; since the third pin 143 is connected to the anode terminal A and the fourth pin 144 is connected to the cathode terminal K, the distance e4 between the third pin 143 and the fourth pin 144 is increased to ensure electrical isolation in order to avoid a connection between the anode and cathode of the second diode 132.
[0066] In one application example of this application, the distance e2 between the first pin 141 and the second pin 142 is equal to the distance e4 between the third pin 143 and the fourth pin 144; the distance e1 between the fifth pin 145 and the first pin 141 is equal to the distance e3 between the second pin 142 and the third pin 143.
[0067] In one application example of this application, the distance e2 between the first pin 141 and the second pin 142, and the distance e4 between the third pin 143 and the fourth pin 144 are all greater than or equal to 2.5 mm; the distance e1 between the fifth pin 145 and the first pin 141, and the distance e3 between the second pin 142 and the third pin 143 are all greater than 1.6 mm and less than 2.5 mm.
[0068] In order to enhance the current carrying capacity of each pin, in one application example of this application, the width of each pin is set in the range of 0.9 to 1.2 mm, and the thickness of each pin is greater than 0.5 mm.
[0069] For example, the package housing 110 substrate 120 adopts a TO247 package structure size.
[0070] It is understood that, except for the number of pins and related dimensions which are inconsistent with the standard TO247 package structure dimensions, the power module 100 of this application embodiment is consistent with the TO247 package structure dimensions, such as the dimensions of the package housing 110 and the substrate 120.
[0071] It should be noted that, in order to illustrate the device layout scheme of the power module, Figure 1 The structural diagram shown is a cross-sectional view of the power module. A schematic diagram of the packaged power module is shown below. Figure 5 As shown.
[0072] This application embodiment also provides an electronic control board, on which the aforementioned power module 100 is arranged.
[0073] In some embodiments, at least a PFC circuit is arranged on the electronic control board 200, and the aforementioned power module 100 is arranged on the electronic control board 200 as a component of the PFC circuit.
[0074] In one application example of this application, the control board 200 is the control board of an air conditioner. The control board 200 improves the power factor of the input power supply of the air conditioner based on the on / off state of the IGBT 133 of the control power module 100.
[0075] This application embodiment also provides an assembly diagram of the electronic control board 200, such as... Figure 6 As shown. The control board 200 is provided with a bracket 301 for fixing the heat sink 302. The power module 100 is fixed on the heat sink 302. The combination of the bracket 301 and the heat sink 302 allows the power module 100 to be arranged on the control board 200.
[0076] Understandably, fixing the power module 100 to the heat sink 302 can improve the heat dissipation effect of the power module 100 during operation.
[0077] Here, the power module 100 can be arranged on either the front or the back of the PCB board of the electronic control board 200. This embodiment does not specifically limit the installation position of the power module 100.
[0078] It should be noted that terms such as "first" and "second" are used to distinguish similar objects, and are not necessarily used to describe a specific order or sequence.
[0079] Furthermore, the technical solutions described in the embodiments of this application can be combined arbitrarily without conflict.
[0080] The above description is merely a specific embodiment of this application, but the scope of protection of this application is not limited thereto. Any variations or substitutions that can be easily conceived by those skilled in the art within the scope of the technology disclosed in this application should be included within the scope of protection of this application. Therefore, the scope of protection of this application should be determined by the scope of the claims.
Claims
1. A power module, characterized in that, The power module includes: A package housing, on which multiple pins are provided; A substrate is disposed within the packaging housing, and a plurality of mutually isolated conductive areas are disposed on the substrate; A first diode is disposed on a first conductive region of the substrate; A power device unit includes an IGBT and a second diode, wherein the IGBT and the second diode are arranged on a second conductive region; Each of the plurality of pins is electrically connected to one of the plurality of conductive regions.
2. The power module according to claim 1, characterized in that, The plurality of pins includes a first pin, a second pin, a third pin, a fourth pin, and a fifth pin arranged in sequence; The plurality of conductive regions further includes a third conductive region, a fourth conductive region, and a fifth conductive region; Wherein, the first pin is electrically connected to the third conductive region; the second pin is electrically connected to the fourth conductive region; the third pin is electrically connected to the second conductive region; the fourth pin is electrically connected to the fifth conductive region; and the fifth pin is electrically connected to the first conductive region.
3. The power module according to claim 2, characterized in that, The cathode of the first diode is electrically connected to the first conductive region, and the anode of the first diode is electrically connected to the fifth conductive region; the collector of the IGBT and the cathode of the second diode are connected to the second conductive region, the emitter of the IGBT and the anode of the second diode are electrically connected to the fourth conductive region; and the gate of the IGBT is electrically connected to the third conductive region.
4. The power module according to claim 3, characterized in that, The first conductive region and the fifth conductive region are arranged close to each other, and the second conductive region, the third conductive region and the fourth conductive region are arranged close to each other.
5. The power module according to claim 3, characterized in that, The distance between the first pin and the second pin is greater than the distance between the fifth pin and the first pin, and the distance between the third pin and the fourth pin, respectively; the distance between the second pin and the third pin is greater than the distance between the fifth pin and the first pin, and the distance between the third pin and the fourth pin, respectively.
6. The power module according to claim 1, characterized in that, The first diode is a fast recovery diode (FRD).
7. The power module according to claim 1, characterized in that, The power device unit is a reverse-conducting IGBT module.
8. The power module according to claim 1, characterized in that, The second diode is a fast recovery diode.
9. The power module according to any one of claims 1 to 8, characterized in that, The package housing and the substrate adopt the TO247 package structure size.
10. The power module according to any one of claims 1 to 8, characterized in that, The substrate is a copper-clad ceramic substrate.
11. An electronic control board, characterized in that, The power module as described in any one of claims 1 to 10 is arranged on the electronic control board.