IGBT (Insulated Gate Bipolar Translator) semiconductor module, direct-current bus chopping unit and current and frequency conversion device

Abstract

The utility model discloses an IGBT (Insulated Gate Bipolar Translator) semiconductor module, a direct current bus chopping unit and a current and frequency conversion device. The module comprises a bottom plate, two DCB plates with insulation and heat conduction effects, two IGBT chip sets, at least one diode chip set, at least two collector electrode copper sheets, at least two emitter electrode copper sheets, at least two gate electrode copper sheets, at least two module collector electrode terminals connected externally and at least two module emitter electrode terminals connected externally. The IGBT semiconductor module comprises at least one externally connected module gate pole pin, at least one externally connected module emitter pole pin, two groups of IGBT chip sets which are connected in parallel, diode chip sets which are connected in parallel, and all the IGBT chip sets and all the diode chip sets which are inversely connected in parallel, the IGBT semiconductor module uses an existing packaging shell, and IGBT chips and diode chips which are suitable for a chopper circuit are packaged in the IGBT semiconductor module. The semiconductor waste of the chopper circuit of the AC-DC conversion device is greatly reduced, the cost is reduced, and the size is reduced.

Description

Technical Field

[0001] This utility model relates to the field of power conversion and frequency conversion technology, and in particular to an IGBT semiconductor module, a DC bus chopper unit, and a power conversion and frequency conversion device. Background Technology

[0002] Three-phase AC / DC converters are commonly used in motor control, power generation, or power supply applications. To prevent overvoltage on the DC bus in case of system malfunctions, a chopper circuit is typically added to the DC bus. The chopper circuit is as follows: Figure 1 As shown, its working principle is as follows: when the DC bus voltage is greater than the chopper working setting value, the switching transistor of the chopper circuit is turned on, and the DC power is consumed and the bus voltage is reduced through the chopper resistor. When the DC bus voltage is less than the working setting value, the switching transistor of the chopper circuit is turned off.

[0003] Chopper circuits have short operating times, and suitable semiconductor modules are hard to find on the market. Two-level half-bridge semiconductor modules are typically used for chopper circuits in AC / DC converters. The internal circuitry of a two-level half-bridge module is as follows: Figure 2 As shown, when the two-level half-bridge module 4 is used as the switching transistor in the chopper circuit of the AC / DC converter, the circuit of the AC / DC converter is as follows: Figure 3 As shown, this scheme has the following drawbacks: the IGBTs on the upper bridge are not utilized, and the diodes on both the upper and lower bridges are not utilized sufficiently. Utility Model Content

[0004] The technical problem to be solved by this utility model is to propose an IGBT semiconductor module that uses an existing packaging shell to encapsulate IGBT chips and diode chips suitable for chopper circuits, thereby significantly reducing semiconductor waste in the chopper circuit of AC-DC converters, reducing costs, shrinking size, and simplifying design.

[0005] To solve the above-mentioned technical problems, this utility model provides an IGBT semiconductor module, including a base plate, two DCB boards with insulation and heat conduction functions, two IGBT chip sets, at least one diode chip set, at least two collector copper sheets, at least two emitter copper sheets, at least two gate copper sheets, at least two externally connected module collector terminals, at least two externally connected module emitter terminals, at least one externally connected module gate pin, and at least one externally connected module emitter pin.

[0006] The base plate is rectangular, with a mounting hole at each of the four corners and a rectangular mounting surface on top;

[0007] The lower surface of the DCB board is the base plate welding surface, and the upper surface is the copper foil welding surface;

[0008] Each group of IGBT chipsets includes several IGBT chips, and each IGBT chip includes three electrodes: a collector for current inflow, an emitter for current outflow, and a gate for controlling the conduction of the IGBT chip; each group of diode chipsets includes several diode chips, and each diode chip includes two electrodes: an anode for current inflow and a cathode for current outflow.

[0009] The upper surface of the base plate is rectangular. In the direction perpendicular to the upper surface of the base plate, the long side of the rectangle runs left and right. The collector terminal of the first module is located at the upper left position of the base plate, the emitter terminal of the first module is located at the lower left position of the base plate, the collector terminal of the second module is located at the upper right position of the base plate, and the emitter terminal of the second module is located at the lower right position of the base plate. The first DCB board is soldered to the left side of the base plate, and the second DCB board is soldered to the right side of the base plate. The first collector copper foil is located at the upper part of the first DCB board, the first emitter copper foil is located at the lower part of the first DCB board, the second collector copper foil is located at the upper part of the second DCB board, and the second emitter copper foil is located at the lower part of the second DCB board.

[0010] The two IGBT chipsets include a first IGBT chipset and a second IGBT chipset;

[0011] The lower surfaces of the first DCB board and the second DCB board are welded side by side to the base plate. The first collector copper foil, the first emitter copper foil, and the first gate copper foil are welded to the upper surface of the first DCB board. The second collector copper foil, the second emitter copper foil, and the second gate copper foil are welded to the upper surface of the second DCB board. The collector of the first IGBT chip group is welded to the first collector copper foil. The collector of the second IGBT chip group is welded to the second collector copper foil. The cathode of the diode chip group is welded to the collector copper foil.

[0012] The first module's collector terminal is connected to the first collector copper foil via a bonding wire, the first module's emitter terminal is connected to the first emitter copper foil via a bonding wire, the second module's collector terminal is connected to the second collector copper foil via a bonding wire, and the second module's emitter terminal is connected to the second emitter copper foil via a bonding wire.

[0013] The emitter of the first IGBT chip group is connected to the first emitter copper foil via a bonding wire; the emitter of the second IGBT chip group is connected to the second emitter copper foil via a bonding wire; the gate of the first IGBT chip group is connected to the first gate copper foil via a bonding wire; the gate of the second IGBT chip group is connected to the second gate copper foil via a bonding wire; and the anode of the diode chip group is connected to the emitter of the IGBT chip group via a bonding wire.

[0014] The first gate copper foil, the second gate copper foil, and the module gate pin are connected by a bonding wire, and the first emitter copper foil, the second emitter copper foil, and the module emitter pin are connected by a bonding wire.

[0015] Preferably, the "at least one set of diode chipsets" is "two sets of diode chipsets", the "cathode of the diode chipset is soldered to the collector copper foil" means "the cathode of the first diode chipset is soldered to the first collector copper foil, and the cathode of the second diode chipset is soldered to the second collector copper foil", and the "anode of the diode chipset is connected to the emitter of the IGBT chipset through a bonding wire" means "the anode of the first diode chipset is connected to the emitter of the first IGBT chipset through a bonding wire, and the anode of the second diode chipset is connected to the emitter of the second IGBT chipset through a bonding wire".

[0016] Preferably, the "at least one externally connected module gate pin" means "the IGBT semiconductor module includes two externally connected module gate pins", the "at least one externally connected module emitter pin" means "the IGBT semiconductor module includes two externally connected emitter pins", and the "first gate copper foil, second gate copper foil and externally connected module gate pin are connected by bonding wires, the first emitter copper foil, second emitter copper foil and externally connected module emitter pin are connected by bonding wires" means "the first gate pin is connected to the first gate copper foil by bonding wires, the first emitter pin is connected to the first emitter copper foil by bonding wires, the second gate pin is connected to the second gate copper foil by bonding wires, and the second emitter pin is connected to the second emitter copper foil by bonding wires".

[0017] Preferably, the first collector copper foil and the second collector copper foil are connected by a bonding wire, and the first emitter copper foil and the second emitter copper foil are connected by a bonding wire.

[0018] Preferably, the combined current capability of all IGBT chips in the IGBT chipset is much greater than the combined current capability of all diodes in the diode chipset, where "much greater" means that the rated current capability of the former is more than twice that of the latter.

[0019] Preferably, the first IGBT chip group includes M IGBT chips. The collector of the first IGBT chip is soldered to the upper left of the first collector copper foil. The second IGBT chip is located to the lower right of the first IGBT chip and soldered to the first collector copper foil. The third IGBT chip is located to the lower right of the second IGBT chip and soldered to the first collector copper foil. ... The Mth chip is located to the lower right of the (M-1)th IGBT chip and soldered to the first collector copper foil.

[0020] The second IGBT chipset contains N IGBT chips. The collector of the first IGBT chip is soldered to the lower left of the second collector copper foil. The second IGBT chip is located to the upper right of the first IGBT chip and soldered to the second collector copper foil. The third IGBT chip is located to the upper right of the second IGBT chip and soldered to the second collector copper foil. ... The Nth chip is located to the upper right of the (N-1)th IGBT chip and soldered to the second collector copper foil.

[0021] Preferably, the IGBT semiconductor module further includes an externally connected module collector pin, which is connected to one of the first collector copper foil or the second collector copper foil via a bonding wire.

[0022] Preferably, the IGBT semiconductor module is perpendicular to the upper surface of the base plate, and an insulating shell is provided on the upper part of the base plate along the perimeter of the base plate. The DCB board is surrounded by the insulating shell, and the DCB board, copper foil, IGBT chipset, diode chipset, and bonding wires are all covered with insulating adhesive.

[0023] To address the aforementioned technical problems, this utility model also discloses a DC bus chopper unit, which includes the aforementioned IGBT semiconductor module.

[0024] To solve the above-mentioned technical problems, this utility model also discloses a converter frequency converter, wherein the converter frequency converter adopts the IGBT semiconductor module described above.

[0025] With the above-described module, the IGBT semiconductor module includes a base plate, two DCB boards with insulating and thermally conductive functions, two IGBT chip sets, at least one diode chip set, at least two collector copper foils, at least two emitter copper foils, at least two gate copper foils, at least two externally connected module collector terminals, at least two externally connected module emitter terminals, at least one externally connected module gate pin, and at least one externally connected module emitter pin. Each IGBT chip set includes several IGBT chips, and each IGBT chip includes three electrodes: a collector for current inflow, an emitter for current outflow, and a gate for controlling the IGBT chip's conduction. Each diode chip set includes several diode chips. Each diode chip includes two electrodes: an anode for current inflow and a cathode for current outflow. The upper surface of the base plate is rectangular. A direction perpendicular to the upper surface of the base plate, with the long side of the rectangle running left-right, is used. The collector terminal of the first module is located at the upper left of the base plate, and the emitter terminal of the first module is located at the lower left of the base plate. The collector terminal of the second module is located at the upper right of the base plate, and the emitter terminal of the second module is located at the lower right of the base plate. The first DCB board is soldered to the left side of the base plate, and the second DCB board is soldered to the right side of the base plate. The first collector copper foil is located on the upper part of the first DCB board, and the first emitter copper foil is located on the lower part of the first DCB board. The second collector copper foil is located on the upper part of the second DCB board, and the second emitter copper foil is located on the lower part of the second DCB board. Two IGBTs are used. The T-chipset includes a first IGBT chipset and a second IGBT chipset. The lower surfaces of the first and second DCB boards are soldered side-by-side to a base plate. The first collector copper foil, the first emitter copper foil, and the first gate copper foil are soldered to the upper surface of the first DCB board, and the second collector copper foil, the second emitter copper foil, and the second gate copper foil are soldered to the upper surface of the second DCB board. The collector of the first IGBT chipset is soldered to the first collector copper foil, and the collector of the second IGBT chipset is soldered to the second collector copper foil. The cathode of the diode chipset is soldered to the collector copper foil. The emitter of the first IGBT chipset is connected to the first emitter copper foil via a bonding wire, and the emitter of the second IGBT chipset is... The gate of the first IGBT chip group is connected to the first gate copper layer via a bonding wire, the gate of the second IGBT chip group is connected to the second gate copper layer via a bonding wire, and the anode of the diode chip group is connected to the emitter of the IGBT chip group via a bonding wire. The first gate copper layer, the second gate copper layer, and the module gate pin are connected via bonding wires, and the first emitter copper layer, the second emitter copper layer, and the module emitter pin are connected via bonding wires. This IGBT semiconductor module uses an existing packaging shell and internally encapsulates IGBT chips and diode chips suitable for chopper circuits, significantly reducing semiconductor waste in the chopper circuit of AC / DC converters, lowering costs, reducing size, and simplifying design. Attached Figure Description

[0026] Figure 1 This is a schematic diagram of the chopper circuit of an existing AC-DC-AC converter.

[0027] Figure 2 This is a circuit diagram of a two-level half-bridge module commonly used in existing AC-DC-AC converter choppers;

[0028] Figure 3 A schematic diagram illustrating the application of a two-level half-bridge module as a semiconductor device in a chopper circuit;

[0029] Figure 4 This is a side sectional view of the IGBT semiconductor module of this utility model;

[0030] Figure 5 Top view of the IGBT semiconductor module of this utility model Figure 1 And a schematic diagram of Example 3;

[0031] Figure 6 Top view of the utility model IGBT semiconductor module Figure 2 And a schematic diagram of Example 4;

[0032] Figure 7 Top view of the IGBT semiconductor module of this utility model Figure 3 And a schematic diagram of Example 5;

[0033] Figure 8 Top view of the IGBT semiconductor module of this utility model Figure 4 And a schematic diagram of Example 6;

[0034] Figure 9 Top view of the IGBT semiconductor module of this utility model Figure 5 And a schematic diagram of Example 7;

[0035] Figure 10 A schematic diagram of the braking circuit of the IGBT semiconductor module using this utility model;

[0036] Figure 11 This is a comparison diagram of the braking circuit of the IGBT semiconductor module using this invention and the existing technical solution. Detailed Implementation

[0037] To make the objectives, technical solutions, and advantages of this utility model clearer, the present utility model will be further described in detail below with reference to the accompanying drawings and embodiments. It should be understood that the specific embodiments described herein are for illustrative purposes only and are not intended to limit the scope of this utility model.

[0038] Example 1

[0039] Please see Figure 4 and Figure 5 , Figure 4 This is a side sectional view of the IGBT semiconductor module of this utility model. Figure 5 Top view of the IGBT semiconductor module of this utility model Figure 1 And a schematic diagram of Example 3;

[0040] This embodiment discloses an IGBT semiconductor module 1, including a base plate 30, two DCB boards 13 and 22 with insulating and thermally conductive functions, two IGBT chip sets 16 and 18, at least one diode chip set 171, at least two collector copper sheets 15 and 19, at least two emitter copper sheets 14 and 23, at least two gate copper sheets 261 and 262, at least two externally connected module collector terminals 11 and 20, at least two externally connected module emitter terminals 12 and 21, at least one externally connected module gate pin 241 and 242, and at least one externally connected module emitter pin 251 and 252.

[0041] The base plate 30 is rectangular, with a mounting hole at each of the four corners and a rectangular mounting surface on top;

[0042] The lower surface of DCB board 13 and 22 is the base plate welding surface, and the upper surface is the copper foil welding surface;

[0043] Each group of IGBT chipsets includes several IGBT chips, and each IGBT chip includes three electrodes: a collector for current inflow, an emitter for current outflow, and a gate for controlling the conduction of the IGBT chip; each group of diode chipsets includes several diode chips, and each diode chip includes two electrodes: an anode for current inflow and a cathode for current outflow.

[0044] The upper surface of the base plate 30 is rectangular. The long side of the rectangle runs along the left and right sides. The first module collector terminal 11 is located at the upper left position of the base plate, the first module emitter terminal 12 is located at the lower left position of the base plate, the second module collector terminal 20 is located at the upper right position of the base plate, the second module emitter terminal 21 is located at the lower right position of the base plate, the first DCB board 13 is soldered to the left side of the base plate 30, the second DCB board 22 is soldered to the right side of the base plate 30, the first collector copper foil 15 is located at the upper part of the first DCB board 13, the first emitter copper foil 14 is located at the lower part of the first DCB board 13, the second collector copper foil 19 is located at the upper part of the second DCB board 22, and the second emitter copper foil 23 is located at the lower part of the second DCB board 22.

[0045] The two IGBT chipsets include a first IGBT chipset 16 and a second IGBT chipset 18;

[0046] The lower surfaces of the first DCB board 13 and the second DCB board 22 are welded side-by-side to the base plate 30. The first collector copper foil 15, the first emitter copper foil 14, and the first gate copper foil 261 are welded to the upper surface of the first DCB board 13. The second collector copper foil 19, the second emitter copper foil 23, and the second gate copper foil 262 are welded to the upper surface of the second DCB board 22. The collector of the first IGBT chip group 16 is welded to the first collector copper foil 15. The collector of the second IGBT chip group 18 is welded to the second collector copper foil 19. The cathode of the diode chip group 17 is welded to the collector copper foils 15 and 19.

[0047] The first module collector terminal 11 is connected to the first collector copper foil 15 by a bonding wire, the first module emitter terminal 12 is connected to the first emitter copper foil 14 by a bonding wire, the second module collector terminal 20 is connected to the second collector copper foil 19 by a bonding wire, and the second module emitter terminal 21 is connected to the second emitter copper foil 23 by a bonding wire.

[0048] The emitter of the first IGBT chip group 16 is connected to the first emitter copper foil 14 via a bonding wire; the emitter of the second IGBT chip group 18 is connected to the second emitter copper foil 23 via a bonding wire; the gate of the first IGBT chip group 16 is connected to the first gate copper foil 261 via a bonding wire; the gate of the second IGBT chip group 18 is connected to the second gate copper foil 262 via a bonding wire; and the anode of the diode chip group 17 is connected to the emitter of the IGBT chip group via a bonding wire.

[0049] The first gate copper foil 261 and the second gate copper foil 262 are connected to the module gate pin 24 via a bonding wire, and the first emitter copper foil 14 and the second emitter copper foil 23 are connected to the module emitter pin 25 via a bonding wire.

[0050] Example 2

[0051] This embodiment is based on Embodiment 1.

[0052] In this embodiment, the first collector copper foil 15 and the second collector copper foil 19 are connected by a bonding wire, and the first emitter copper foil 14 and the second emitter copper foil 23 are connected by a bonding wire.

[0053] The combined current capability of all IGBT chips in the IGBT chipset is far greater than the combined current capability of all diodes in the diode chipset, where "far greater" means that the rated current capability of the former is more than twice that of the latter.

[0054] In this embodiment, the first IGBT chip group 16 includes M IGBT chips. The collector of the first IGBT chip is soldered to the upper left of the first collector copper foil. The second IGBT chip is located to the lower right of the first IGBT chip and soldered to the first collector copper foil. The third IGBT chip is located to the lower right of the second IGBT chip and soldered to the first collector copper foil. ... The Mth chip is located to the lower right of the (M-1)th IGBT chip and soldered to the first collector copper foil.

[0055] The second IGBT chipset 18 contains N IGBT chips. The collector of the first IGBT chip is soldered to the lower left of the second collector copper foil. The second IGBT chip is located to the upper right of the first IGBT chip and soldered to the second collector copper foil. The third IGBT chip is located to the upper right of the second IGBT chip and soldered to the second collector copper foil. ... The Nth chip is located to the upper right of the (N-1)th IGBT chip and soldered to the second collector copper foil.

[0056] In this embodiment, the IGBT semiconductor module is perpendicular to the upper surface of the base plate 30. An insulating shell is provided on the upper part of the base plate 30 along the perimeter of the base plate. The DCB board is surrounded by the insulating shell. The DCB board, copper foil, IGBT chipset, diode chipset, and bonding wires are all covered with insulating adhesive.

[0057] Example 3

[0058] Please see Figure 5 This embodiment discloses an IGBT semiconductor module, including a base plate 30, two DCB boards 13 and 22 with insulating and heat-conducting functions, two IGBT chip sets 16 and 18, a diode chip set 17, two collector copper sheets 15 and 19, two emitter copper sheets 14 and 23, two gate copper sheets 261 and 262, two externally connected module collector terminals 11 and 20, two externally connected module emitter terminals 12 and 21, one externally connected module gate pin 24, and one externally connected module emitter pin 25.

[0059] The outer casing, base plate, DCB board, terminals, chips, pins, etc., can all utilize existing maturely packaged components.

[0060] The base plate 30 is rectangular and is made of copper with excellent thermal conductivity. There is a mounting hole at each of the four corners and a rectangular mounting surface on top.

[0061] DCB boards 13 and 22 are aluminum oxide boards with excellent thermal conductivity. The lower surface is the base plate welding surface, and the upper surface is the copper foil welding surface.

[0062] Each IGBT chipset includes three 1700V / 300A IGBT chips. Each IGBT chip has three electrodes: a collector for current inflow, an emitter for current outflow, and a gate for controlling the conduction of the IGBT chip.

[0063] The diode chip group 17 includes a 1700V / 100A diode chip, and each diode chip includes two terminals: an anode for current to flow in and a cathode for current to flow out.

[0064] The upper surface of the base plate 30 is rectangular. The direction perpendicular to the upper surface of the base plate 30 is perpendicular to the long side of the rectangle. The first module collector terminal 11 is located at the upper left position of the base plate 30, the first module emitter terminal 12 is located at the lower left position of the base plate 30, the second module collector terminal 20 is located at the upper right position of the base plate 30, the second module emitter terminal 21 is located at the lower right position of the base plate 30, the first DCB board 13 is soldered to the left side of the base plate 30, the second DCB board 22 is soldered to the right side of the base plate 30, the first collector copper foil 15 is located at the upper part of the first DCB board 13, the first emitter copper foil 14 is located at the lower part of the first DCB board 13, the second collector copper foil 19 is located at the upper part of the second DCB board 22, and the second emitter copper foil 23 is located at the lower part of the second DCB board 22.

[0065] The lower surfaces of the first DCB board 13 and the second DCB board 22 are welded side-by-side to the base plate 30. The first collector copper foil 15, the first emitter copper foil 14, and the first gate copper foil 261 are welded to the upper surface of the first DCB board 13. The second collector copper foil 19, the second emitter copper foil 23, and the second gate copper foil 262 are welded to the upper surface of the second DCB board 22. The collector of the first IGBT chip group 16 is welded to the first collector copper foil 15. The collector of the second IGBT chip group 18 is welded to the second collector copper foil 19. The cathode of the diode chip group 17 is welded to the first collector copper foil 15.

[0066] The first module collector terminal 11 is connected to the first collector copper foil 15 via a bonding wire; the first module emitter terminal 12 is connected to the first emitter copper foil 14 via a bonding wire; the second module collector terminal 20 is connected to the second collector copper foil 19 via a bonding wire; and the second module emitter terminal 21 is connected to the second emitter copper foil 23 via a bonding wire.

[0067] The emitter of the first IGBT chip group 16 is connected to the first emitter copper foil 14 via a bonding wire. The emitter of the second IGBT chip group 18 is connected to the second emitter copper foil 23 via a bonding wire. The anode of the diode chip group 17 is connected to the emitter of the first IGBT chip group 16 via a bonding wire. The gate of the first IGBT chip group 16 is connected to the first gate copper foil 261 via a bonding wire. The gate of the second IGBT chip group 18 is connected to the second gate copper foil 262 via a bonding wire.

[0068] The first gate copper foil 261 and the second gate copper foil 262 are connected to the externally connected module gate pin 24 via a bonding wire, and the first emitter copper foil 14 and the second emitter copper foil 23 are connected to the externally connected module emitter pin 25 via a bonding wire.

[0069] The above-mentioned IGBT semiconductor module has a rated output capability of 1700V / 1800A, and is more suitable for chopper modules in the field of power conversion and frequency conversion.

[0070] When the above module is used in conjunction with an external freewheeling diode in a chopper module for converter and frequency conversion applications, such as... Figure 11 As shown, (a) is a chopper circuit 1 using the semiconductor module of this invention, (b) is a chopper circuit 2 using three existing 1700V / 600A semiconductor modules, and (c) is a chopper circuit 3 using two existing 1700V / 900A semiconductor modules. The chopper module of this invention has the capability equivalent to that of a chopper module composed of two 1700V / 900A IGBT half-bridge modules, and also equivalent to that of a chopper module composed of three 1700V / 600A IGBT half-bridge modules.

[0071] Example 4

[0072] Please see Figure 6 This embodiment discloses an IGBT semiconductor module 1, including a base plate 30, two DCB boards 13 and 22 with insulating and heat-conducting functions, two IGBT chip sets, two diode chip sets 171 and 172, two collector copper sheets 15 and 19, two emitter copper sheets 14 and 23, two gate copper sheets 261 and 262, two externally connected module collector terminals 11 and 20, two externally connected module emitter terminals 12 and 21, one externally connected module gate pin 24, and one externally connected module emitter pin 25.

[0073] The outer casing, base plate, DCB board, terminals, chips, pins, etc., can all utilize existing maturely packaged components.

[0074] The base plate is rectangular and is made of copper with excellent thermal conductivity. There is a mounting hole at each of the four corners, and a rectangular mounting surface on top.

[0075] The DCB board is an aluminum oxide board with excellent thermal conductivity. The lower surface is the base plate welding surface, and the upper surface is the copper foil welding surface.

[0076] Each IGBT chipset includes three 1700V / 300A IGBT chips. Each IGBT chip has three electrodes: a collector for current inflow, an emitter for current outflow, and a gate for controlling the conduction of the IGBT chip.

[0077] The diode chip set includes a 1700V / 100A diode chip, and each diode chip contains two electrodes: an anode for current to flow into and a cathode for current to flow out.

[0078] The upper surface of the base plate 30 is rectangular. The long side of the rectangle runs along the left and right sides. The first module collector terminal 11 is located at the upper left position of the base plate, the first module emitter terminal 12 is located at the lower left position of the base plate, the second module collector terminal 20 is located at the upper right position of the base plate, and the second module emitter terminal 21 is located at the lower right position of the base plate. The first DCB board 13 is soldered to the left side of the base plate, and the second DCB board 22 is soldered to the right side of the base plate. The first collector copper foil 15 is located above the first DCB board 13, the first emitter copper foil 14 is located below the first DCB board 13, the second collector copper foil 19 is located above the second DCB board 22, and the second emitter copper foil 23 is located below the second DCB board 22.

[0079] The lower surfaces of the first DCB board 13 and the second DCB board 22 are welded side-by-side to the base plate 30. The first collector copper foil 15, the first emitter copper foil 14, and the first gate copper foil 261 are welded to the upper surface of the first DCB board 13. The second collector copper foil 19, the second emitter copper foil 23, and the second gate copper foil 262 are welded to the upper surface of the second DCB board 22. The collector of the first IGBT chip group 16 is welded to the first collector copper foil 15. The collector of the second IGBT chip group 18 is welded to the second collector copper foil 19. The cathode of the first diode chip group 171 is welded to the first collector copper foil 15. The cathode of the second diode chip group 172 is welded to the second collector copper foil 19.

[0080] The first module collector terminal 11 is connected to the first collector copper foil 15 via a bonding wire; the first module emitter terminal 12 is connected to the first emitter copper foil 14 via a bonding wire; the second module collector terminal 20 is connected to the second collector copper foil 19 via a bonding wire; and the second module emitter terminal 21 is connected to the second emitter copper foil 23 via a bonding wire.

[0081] The emitter of the first IGBT chip group 16 is connected to the first emitter copper foil 14 via a bonding wire. The emitter of the second IGBT chip group 18 is connected to the second emitter copper foil 23 via a bonding wire. The anode of the first diode chip group 171 is connected to the emitter of the first IGBT chip group 16 via a bonding wire. The anode of the second diode chip group 172 is connected to the emitter of the second IGBT chip group 18 via a bonding wire. The gate of the first IGBT chip group 16 is connected to the first gate copper foil 261 via a bonding wire. The gate of the second IGBT chip group 18 is connected to the second gate copper foil 262 via a bonding wire.

[0082] The first gate copper foil 261 and the second gate copper foil 262 are connected to the externally connected module gate pin 24 via a bonding wire, and the first emitter copper foil 14 and the second emitter copper foil 23 are connected to the externally connected module emitter pin 25 via a bonding wire.

[0083] The above-mentioned IGBT semiconductor module has a rated output capability of 1700V / 1800A, and is more suitable for chopper modules in the field of power conversion and frequency conversion.

[0084] When the above module is used in conjunction with an external freewheeling diode in a chopper module for converter and frequency conversion applications, such as... Figure 11 As shown, (a) is a chopper circuit 1 using the semiconductor module of this invention, (b) is a chopper circuit 2 using three existing 1700V / 600A semiconductor modules, and (c) is a chopper circuit 3 using two existing 1700V / 900A semiconductor modules. The chopper module of this invention has the capability equivalent to that of a chopper module composed of two 1700V / 900A IGBT half-bridge modules, and also equivalent to that of a chopper module composed of three 1700V / 600A IGBT half-bridge modules.

[0085] Example 5

[0086] Please see Figure 7 This embodiment discloses an IGBT semiconductor module 1, including a base plate 30, two DCB boards 13 and 22 with insulating and heat-conducting functions, two IGBT chip sets 16 and 18, two diode chip sets 171 and 172, two collector copper sheets 15 and 19, two emitter copper sheets 14 and 23, two gate copper sheets 261 and 262, two externally connected module collector terminals 11 and 20, two externally connected module emitter terminals 12 and 21, two externally connected module gate pins 241 and 242, and two externally connected module emitter pins 251 and 252.

[0087] The outer casing, base plate, DCB board, terminals, chips, pins, etc., can all utilize existing maturely packaged components.

[0088] The base plate 30 is rectangular and is made of copper with excellent thermal conductivity. There is a mounting hole at each of the four corners and a rectangular mounting surface on top.

[0089] The DCB board is an aluminum oxide board with excellent thermal conductivity. The lower surface is the base plate welding surface, and the upper surface is the copper foil welding surface.

[0090] Each IGBT chipset includes three 1700V / 300A IGBT chips. Each IGBT chip has three electrodes: a collector for current inflow, an emitter for current outflow, and a gate for controlling the conduction of the IGBT chip.

[0091] The diode chip set includes a 1700V / 100A diode chip, and each diode chip includes two electrodes: an anode for current to flow in and a cathode for current to flow out.

[0092] The upper surface of the base plate 30 is rectangular. The long side of the rectangle runs from left to right. The first module collector terminal 11 is located at the upper left of the base plate 30, the first module emitter terminal 12 is located at the lower left of the base plate, the second module collector terminal 20 is located at the upper right of the base plate, and the second module emitter terminal 21 is located at the lower right of the base plate. The first DCB board 13 is soldered to the left side of the base plate 30, and the second DCB board 22 is soldered to the right side of the base plate 30. The first collector copper foil 15 is located at the upper part of the first DCB board 13, the first emitter copper foil 14 is located at the lower part of the first DCB board 13, the second collector copper foil 19 is located at the upper part of the second DCB board 22, and the second emitter copper foil 23 is located at the lower part of the second DCB board 22.

[0093] The lower surfaces of the first DCB board 13 and the second DCB board 22 are soldered side-by-side to the base plate 30. The first collector copper foil 15, the first emitter copper foil 14, and the first gate copper foil 261 are soldered to the upper surface of the first DCB board 13. The second collector copper foil 19, the second emitter copper foil 23, and the second gate copper foil 262 are soldered to the upper surface of the second DCB board 22. The collector of the first IGBT chip group 16 is soldered to the first collector copper foil 15. The collector of the second IGBT chip group 18 is soldered to the second collector copper foil 19. The cathode of the first diode chip group 171 is soldered to the first collector copper foil 15. The cathode of the second diode chip group 172 is soldered to the second collector copper foil 19.

[0094] The first module collector terminal 11 is connected to the first collector copper foil 15 via a bonding wire, the first module emitter terminal 12 is connected to the first emitter copper foil 14 via a bonding wire, the second module collector terminal 20 is connected to the second collector copper foil 19 via a bonding wire, and the second module emitter terminal 21 is connected to the second emitter copper foil 23 via a bonding wire.

[0095] The emitter of the first IGBT chip group 16 is connected to the first emitter copper foil 14 via a bonding wire. The emitter of the second IGBT chip group 18 is connected to the second emitter copper foil 23 via a bonding wire. The anode of the first diode chip group 171 is connected to the emitter of the first IGBT chip group 16 via a bonding wire. The anode of the second diode chip group 172 is connected to the emitter of the second IGBT chip group 18 via a bonding wire. The gate of the first IGBT chip group 16 is connected to the first gate copper foil 261 via a bonding wire. The gate of the second IGBT chip group 18 is connected to the second gate copper foil 262 via a bonding wire.

[0096] The first module gate pin 241 is connected to the first gate copper foil 261 via a bonding wire, the first module emitter pin 251 is connected to the first emitter copper foil 14 via a bonding wire, the second module gate pin 242 is connected to the second gate copper foil 262 via a bonding wire, and the second module emitter pin 252 is connected to the second emitter copper foil 23 via a bonding wire.

[0097] The above-mentioned IGBT semiconductor module has a rated output capability of 1700V / 1800A, and is more suitable for chopper modules in the field of power conversion and frequency conversion.

[0098] When the above module is used in conjunction with an external freewheeling diode in a chopper module for converter and frequency conversion applications, such as... Figure 11 As shown, (a) is a chopper circuit 1 using the semiconductor module of this invention, (b) is a chopper circuit 2 using three existing 1700V / 600A semiconductor modules, and (c) is a chopper circuit 3 using two existing 1700V / 900A semiconductor modules. The chopper module of this invention has the capability equivalent to that of a chopper module composed of two 1700V / 900A IGBT half-bridge modules, and also equivalent to that of a chopper module composed of three 1700V / 600A IGBT half-bridge modules.

[0099] Example 6

[0100] Please see Figure 8This embodiment discloses an IGBT semiconductor module 1, including a base plate 30, two DCB boards 13 and 22 with insulating and heat-conducting functions, two IGBT chip sets 16 and 18, two diode chip sets 171 and 172, two collector copper sheets 15 and 19, two emitter copper sheets 14 and 23, two gate copper sheets 261 and 262, two externally connected module collector terminals 11 and 20, two externally connected module emitter terminals 12 and 21, two externally connected module gate pins 241 and 242, and two externally connected module emitter pins 251 and 252.

[0101] The outer casing, base plate, DCB board, terminals, chips, pins, etc., can all utilize existing maturely packaged components.

[0102] The base plate is rectangular and is made of copper with excellent thermal conductivity. There is a mounting hole at each of the four corners, and a rectangular mounting surface on top.

[0103] The DCB board is an aluminum oxide board with excellent thermal conductivity. The lower surface is the bottom plate welding surface, and the upper surface is the copper foil welding surface.

[0104] Each IGBT chipset includes three 1700V / 300A IGBT chips, and each IGBT chip includes three electrodes: a collector for current inflow, an emitter for current outflow, and a gate for controlling the conduction of the IGBT chip.

[0105] The diode chip set includes a 1700V / 100A diode chip, and each diode chip includes two electrodes: an anode for current inflow and a cathode for current outflow.

[0106] The upper surface of the base plate 30 is rectangular. In the direction perpendicular to the upper surface of the base plate, the long side of the rectangle runs left and right. The first module collector terminal 11 is located at the upper left position of the base plate 30, the first module emitter terminal 12 is located at the lower left position of the base plate 30, the second module collector terminal 20 is located at the upper right position of the base plate 30, the second module emitter terminal 21 is located at the lower right position of the base plate 30, the first DCB board 13 is soldered to the left part of the base plate 30, the second DCB board 22 is soldered to the right part of the base plate 30, the first collector copper foil 15 is located at the upper part of the first DCB board 13, the first emitter copper foil 14 is located at the lower part of the first DCB board 13, the second collector copper foil 19 is located at the upper part of the second DCB board 22, and the second emitter copper foil 23 is located at the lower part of the second DCB board 22.

[0107] The lower surfaces of the first DCB board 13 and the second DCB board 22 are welded side-by-side to the base plate 30. The first collector copper foil 15, the first emitter copper foil 14, and the first gate copper foil 261 are welded to the upper surface of the first DCB board 13. The second collector copper foil 19, the second emitter copper foil 23, and the second gate copper foil 262 are welded to the upper surface of the second DCB board 22. The collector of the first IGBT chip group 16 is welded to the first collector copper foil 15. The collector of the second IGBT chip group 18 is welded to the second collector copper foil 19. The cathode of the first diode chip group 171 is welded to the first collector copper foil 15. The cathode of the second diode chip group 172 is welded to the second collector copper foil 19.

[0108] The first module collector terminal 11 is connected to the first collector copper foil 15 via a bonding wire, the first module emitter terminal 12 is connected to the first emitter copper foil 14 via a bonding wire, the second module collector terminal 20 is connected to the second collector copper foil 19 via a bonding wire, and the second module emitter terminal 21 is connected to the second emitter copper foil 23 via a bonding wire.

[0109] The emitter of the first IGBT chip group 16 is connected to the first emitter copper foil 14 via a bonding wire. The emitter of the second IGBT chip group 18 is connected to the second emitter copper foil 23 via a bonding wire. The anode of the first diode chip group 171 is connected to the emitter of the first IGBT chip group 16 via a bonding wire. The anode of the second diode chip group 172 is connected to the emitter of the second IGBT chip group 18 via a bonding wire. The gate of the first IGBT chip group 16 is connected to the first gate copper foil 261 via a bonding wire. The gate of the second IGBT chip group 18 is connected to the second gate copper foil 262 via a bonding wire.

[0110] The first collector copper foil 15 and the second collector copper foil 19 are connected by a bonding wire, and the first emitter copper foil 14 and the second emitter copper foil 23 are connected by a bonding wire. This connection can ensure better current sharing between the first IGBT chipset 16 and the second IGBT chipset 18.

[0111] The first module gate pin 241 is connected to the first gate copper foil 261 via a bonding wire, the first module emitter pin 251 is connected to the first emitter copper foil 14 via a bonding wire, the second module gate pin 242 is connected to the second gate copper foil 262 via a bonding wire, and the second module emitter pin 252 is connected to the second emitter copper foil 23 via a bonding wire.

[0112] The above-mentioned IGBT semiconductor module has a rated output capability of 1700V / 1800A, and is more suitable for chopper modules in the field of power conversion and frequency conversion.

[0113] When the above module is used in conjunction with an external freewheeling diode in a chopper module for converter and frequency conversion applications, such as... Figure 11 As shown, (a) is a chopper circuit using the semiconductor module of this invention, (b) is a chopper circuit using three existing 1700V / 600A semiconductor modules 2, and (c) is a chopper circuit using two existing 1700V / 900A semiconductor modules 3. The chopper module of this invention has the capability equivalent to the chopper module composed of two 1700V / 900A IGBT half-bridge modules, and also equivalent to the chopper module composed of three 1700V / 600A IGBT half-bridge modules.

[0114] Example 7

[0115] Please see Figure 9 This embodiment discloses an IGBT semiconductor module 1, including a base plate 30, two DCB boards 13 and 22 with insulating and heat-conducting functions, two IGBT chip sets 16 and 18, two diode chip sets 171 and 172, two collector copper sheets 15 and 19, two emitter copper sheets 14 and 23, two gate copper sheets 261 and 262, two externally connected module collector terminals 11 and 20, two externally connected module emitter terminals 12 and 21, two externally connected module gate pins 241 and 242, two externally connected module emitter pins 251 and 252, and two externally connected module collector pins 27.

[0116] The outer casing, base plate, DCB board, terminals, chips, pins, etc. can all utilize existing maturely packaged components;

[0117] The base plate is rectangular and is made of copper with excellent thermal conductivity. There is a mounting hole at each of the four corners and a rectangular mounting surface on top.

[0118] The DCB board is an aluminum oxide board with excellent thermal conductivity, with the lower surface being the bottom plate welding surface and the upper surface being the copper foil welding surface.

[0119] Each IGBT chipset contains three 1700V / 300A IGBT chips. Each IGBT chip contains three electrodes: a collector for current inflow, an emitter for current outflow, and a gate for controlling the conduction of the IGBT chip.

[0120] The diode chip set includes one 1700V / 100A diode chip, and each diode chip has two electrodes: an anode for current to flow in and a cathode for current to flow out.

[0121] The upper surface of the base plate 30 is rectangular. The long side of the rectangle runs along the left and right sides. The first module collector terminal 11 is located at the upper left position of the base plate, the first module emitter terminal 12 is located at the lower left position of the base plate, the second module collector terminal 20 is located at the upper right position of the base plate, the second module emitter terminal 21 is located at the lower right position of the base plate, the first DCB board 13 is soldered to the left side of the base plate 30, the second DCB board 22 is soldered to the right side of the base plate 30, the first collector copper foil 15 is located at the upper part of the first DCB board 13, the first emitter copper foil 14 is located at the lower part of the first DCB board 13, the second collector copper foil 19 is located at the upper part of the second DCB board 22, and the second emitter copper foil 23 is located at the lower part of the second DCB board 22.

[0122] The lower surfaces of the first DCB board 13 and the second DCB board 22 are welded side-by-side to the base plate 30. The first collector copper foil 15, the first emitter copper foil 14, and the first gate copper foil 261 are welded to the upper surface of the first DCB board 13. The second collector copper foil 19, the second emitter copper foil 23, and the second gate copper foil 262 are welded to the upper surface of the second DCB board 22. The collector of the first IGBT chip group 16 is welded to the first collector copper foil 15. The collector of the second IGBT chip group 18 is welded to the second collector copper foil 19. The cathode of the first diode chip group 171 is welded to the first collector copper foil 15. The cathode of the second diode chip group 172 is welded to the second collector copper foil 19.

[0123] The first module collector terminal 11 is connected to the first collector copper foil 15 via a bonding wire, the first module emitter terminal 12 is connected to the first emitter copper foil 14 via a bonding wire, the second module collector terminal 20 is connected to the second collector copper foil 19 via a bonding wire, and the second module emitter terminal 21 is connected to the second emitter copper foil 23 via a bonding wire.

[0124] The emitter of the first IGBT chip group 16 is connected to the first emitter copper foil 14 via a bonding wire; the emitter of the second IGBT chip group 18 is connected to the second emitter copper foil 23 via a bonding wire; the anode of the first diode chip group 171 is connected to the emitter of the first IGBT chip group 16 via a bonding wire; the anode of the second diode chip group 172 is connected to the emitter of the second IGBT chip group 18 via a bonding wire; the gate of the first IGBT chip group 16 is connected to the first gate copper foil 261 via a bonding wire; and the gate of the second IGBT chip group 18 is connected to the second gate copper foil 262 via a bonding wire.

[0125] The first collector copper foil 15 and the second collector copper foil 19 are connected by a bonding wire, and the first emitter copper foil 14 and the second emitter copper foil 23 are connected by a bonding wire. This connection can ensure better current sharing between the first IGBT chipset 16 and the second IGBT chipset 18.

[0126] The first module gate pin 241 is connected to the first gate copper foil 261 via a bonding wire; the first module emitter pin 251 is connected to the first emitter copper foil 14 via a bonding wire; the second module gate pin 242 is connected to the second gate copper foil 262 via a bonding wire; the second module emitter pin 252 is connected to the second emitter copper foil 23 via a bonding wire; and the module collector pin 27 is connected to the first collector copper foil 15 via a bonding wire.

[0127] The rated output capability of the above IGBT semiconductor module is 1700V / 1800A. This IGBT semiconductor module is more suitable for chopper modules in the field of power conversion and frequency conversion.

[0128] When the above module is used in conjunction with an external freewheeling diode in a chopper module for converter and frequency conversion applications, such as... Figure 11 As shown, (a) is a chopper circuit 1 using the semiconductor module of this invention, (b) is a chopper circuit 2 using three existing 1700V / 600A semiconductor modules, and (c) is a chopper circuit 3 using two existing 1700V / 900A semiconductor modules. The chopper module of this invention has the capability equivalent to that of a chopper module composed of two 1700V / 900A IGBT half-bridge modules, and also equivalent to that of a chopper module composed of three 1700V / 600A IGBT half-bridge modules.

[0129] Example 8

[0130] This embodiment discloses a DC bus chopper unit, which includes the IGBT semiconductor module described in any one of embodiments one to seven.

[0131] Example 9

[0132] This embodiment discloses a converter frequency converter, which uses the IGBT semiconductor module described in any one of embodiments one to seven.

[0133] The preferred embodiments of this application have been described above with reference to the accompanying drawings, but this does not limit the scope of the claims. Any modifications, equivalent substitutions, and improvements made by those skilled in the art without departing from the scope and spirit of this application shall be within the scope of the claims.

Claims

1. An IGBT semiconductor module, characterized in that, It includes a base plate, two DCB boards with insulating and thermally conductive functions, two IGBT chipsets, at least one diode chipset, at least two collector copper sheets, at least two emitter copper sheets, at least two gate copper sheets, at least two externally connected module collector terminals, at least two externally connected module emitter terminals, at least one externally connected module gate pin, and at least one externally connected module emitter pin. The base plate is rectangular, with a mounting hole at each of the four corners and a rectangular mounting surface on top; The lower surface of the DCB board is the base plate welding surface, and the upper surface is the copper foil welding surface; Each group of IGBT chipsets includes several IGBT chips, and each IGBT chip includes three electrodes: a collector for current inflow, an emitter for current outflow, and a gate for controlling the conduction of the IGBT chip; each group of diode chipsets includes several diode chips, and each diode chip includes two electrodes: an anode for current inflow and a cathode for current outflow. The upper surface of the base plate is rectangular. In the direction perpendicular to the upper surface of the base plate, the long side of the rectangle runs left and right. The collector terminal of the first module is located at the upper left position of the base plate, the emitter terminal of the first module is located at the lower left position of the base plate, the collector terminal of the second module is located at the upper right position of the base plate, and the emitter terminal of the second module is located at the lower right position of the base plate. The first DCB board is soldered to the left side of the base plate, and the second DCB board is soldered to the right side of the base plate. The first collector copper foil is located at the upper part of the first DCB board, the first emitter copper foil is located at the lower part of the first DCB board, the second collector copper foil is located at the upper part of the second DCB board, and the second emitter copper foil is located at the lower part of the second DCB board. The two IGBT chipsets include a first IGBT chipset and a second IGBT chipset; The lower surfaces of the first DCB board and the second DCB board are welded side by side to the base plate. The first collector copper foil, the first emitter copper foil, and the first gate copper foil are welded to the upper surface of the first DCB board. The second collector copper foil, the second emitter copper foil, and the second gate copper foil are welded to the upper surface of the second DCB board. The collector of the first IGBT chip group is welded to the first collector copper foil. The collector of the second IGBT chip group is welded to the second collector copper foil. The cathode of the diode chip group is welded to the collector copper foil. The first module's collector terminal is connected to the first collector copper foil via a bonding wire, the first module's emitter terminal is connected to the first emitter copper foil via a bonding wire, the second module's collector terminal is connected to the second collector copper foil via a bonding wire, and the second module's emitter terminal is connected to the second emitter copper foil via a bonding wire. The emitter of the first IGBT chip group is connected to the first emitter copper foil via a bonding wire; the emitter of the second IGBT chip group is connected to the second emitter copper foil via a bonding wire; the gate of the first IGBT chip group is connected to the first gate copper foil via a bonding wire; the gate of the second IGBT chip group is connected to the second gate copper foil via a bonding wire; and the anode of the diode chip group is connected to the emitter of the IGBT chip group via a bonding wire. The first gate copper foil, the second gate copper foil, and the module gate pin are connected by a bonding wire, and the first emitter copper foil, the second emitter copper foil, and the module emitter pin are connected by a bonding wire.

2. The IGBT semiconductor module according to claim 1, characterized in that, The phrase "at least one set of diode chipsets" means "two sets of diode chipsets", the phrase "the cathode of the diode chipset is soldered to the collector copper foil" means "the cathode of the first diode chipset is soldered to the first collector copper foil, and the cathode of the second diode chipset is soldered to the second collector copper foil", and the phrase "the anode of the diode chipset is connected to the emitter of the IGBT chipset via a bonding wire" means "the anode of the first diode chipset is connected to the emitter of the first IGBT chipset via a bonding wire, and the anode of the second diode chipset is connected to the emitter of the second IGBT chipset via a bonding wire".

3. The IGBT semiconductor module according to claim 1, characterized in that, The phrase "at least one externally connected module gate pin" means "the IGBT semiconductor module includes two externally connected module gate pins, which are respectively the first module gate pin and the second module gate pin". The phrase "at least one externally connected module emitter pin" means "the IGBT semiconductor module includes two externally connected emitter pins". The phrase "the first gate copper foil, the second gate copper foil and the externally connected module gate pin are connected by a bonding wire, and the first emitter copper foil, the second emitter copper foil and the externally connected module emitter pin are connected by a bonding wire" means "the first module gate pin is connected to the first gate copper foil by a bonding wire, the first emitter pin is connected to the first emitter copper foil by a bonding wire, the second module gate pin is connected to the second gate copper foil by a bonding wire, and the second emitter pin is connected to the second emitter copper foil by a bonding wire".

4. The IGBT semiconductor module according to any one of claims 1 to 3, characterized in that, The first collector copper foil and the second collector copper foil are connected by a bonding wire, and the first emitter copper foil and the second emitter copper foil are connected by a bonding wire.

5. The IGBT semiconductor module according to any one of claims 1 to 3, characterized in that, The combined current capability of all IGBT chips in the IGBT chipset is much greater than the combined current capability of all diodes in the diode chipset, where "much greater" means that the rated current capability of the former is more than twice that of the latter.

6. The IGBT semiconductor module according to any one of claims 1 to 3, characterized in that, The first IGBT chip group contains M IGBT chips. The collector of the first IGBT chip is soldered to the upper left of the first collector copper foil. The second IGBT chip is located to the lower right of the first IGBT chip and soldered to the first collector copper foil. The third IGBT chip is located to the lower right of the second IGBT chip and soldered to the first collector copper foil. ... The Mth chip is located to the lower right of the (M-1)th IGBT chip and soldered to the first collector copper foil. The second IGBT chipset contains N IGBT chips. The collector of the first IGBT chip is soldered to the lower left of the second collector copper foil. The second IGBT chip is located to the upper right of the first IGBT chip and soldered to the second collector copper foil. The third IGBT chip is located to the upper right of the second IGBT chip and soldered to the second collector copper foil. ... The Nth chip is located to the upper right of the (N-1)th IGBT chip and soldered to the second collector copper foil.

7. The IGBT semiconductor module according to any one of claims 1 to 3, characterized in that, The IGBT semiconductor module also includes an externally connected module collector pin, which is connected to one of the first or second collector copper sheets via a bonding wire.

8. The IGBT semiconductor module according to any one of claims 1 to 3, characterized in that, The IGBT semiconductor module is perpendicular to the upper surface of the base plate. An insulating shell is provided on the upper part of the base plate along the perimeter of the base plate. The DCB board is surrounded by the insulating shell. The DCB board, copper foil, IGBT chipset, diode chipset, and bonding wires are all covered with insulating adhesive.

9. A DC bus chopper unit, characterized in that, The DC bus chopper unit includes the IGBT semiconductor module as described in any one of claims 1 to 3.

10. A converter-frequency converter, characterized in that, The converter frequency converter uses the IGBT semiconductor module described in any one of claims 1 to 3.

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