Deposition apparatus to reduce shutter temperature

Abstract

The utility model relates to deposition equipment for reducing the temperature of a shielding plate. The deposition equipment comprises a cavity, the shielding plate, a fixing ring, a bearing disc and a cooling device, one end of the shielding plate is connected with the cavity, and the other end is used for bearing the fixing ring. The bearing disc is used for bearing a wafer, and the bearing disc is located below the fixing ring and can drive the borne wafer to move relative to the fixing ring and the shielding plate, so that the fixing ring makes contact with the edge of the wafer, and the wafer is fixed to the bearing disc. The cooling device is connected with the fixing ring, cooling fluid is arranged in the cooling device, and heat is received by the fixing ring in a heat conduction mode so as to reduce the temperature of the fixing ring. By reducing the temperature of the fixing ring, a thin film can be prevented from being formed at the junction of the fixing ring and the wafer, and adhesion between the fixing ring and the wafer can be effectively prevented.

Description

TECHNICAL FIELD

[0001] The utility model relates to a deposition equipment for reducing the temperature of a shutter, which can effectively prevent the adhesion of a retaining ring and a wafer during deposition. BACKGROUND

[0002] Chemical vapor deposition (CVD), physical vapor deposition (PVD), and atomic layer deposition (ALD) are commonly used thin film deposition equipment and are widely used in integrated circuit, light emitting diode, and display processes.

[0003] The deposition equipment mainly includes a cavity and a carrier plate. The carrier plate is located in the cavity and is used to carry at least one wafer. For example, in physical vapor deposition, a target material is arranged in the cavity, and the target material faces the wafer on the carrier plate. During physical vapor deposition, the wafer is fixed on the carrier plate by a fixing device, and inert gas and / or reaction gas are delivered into the cavity. A bias voltage is applied to the target material and the carrier plate, respectively. The carrier plate also heats the wafer it carries. The inert gas in the cavity is ionized due to the high voltage electric field. The ionized inert gas is attracted to the target material and bombards the target material. The target atoms or molecules sputtered from the target material are attracted to the carrier plate and deposited on the surface of the heated wafer to form a thin film on the surface of the wafer.

[0004] During physical vapor deposition or atomic layer deposition, long-time and continuous film deposition is usually required for production capacity. As a result, the components inside the cavity are in a high-temperature state for a long time. When the temperature of the components in the cavity rises to the melting point of the deposited metal, the deposited metal may flow to the junction between the components and the wafer, causing the components and the wafer to adhere, resulting in displacement of the wafer on the carrier plate, and further causing abnormal output of subsequent wafers or damage to the wafer. SUMMARY

[0005] To avoid the problems of the prior art, the present utility model provides a novel deposition equipment for reducing the temperature of a shutter. During deposition, a cooling device is used to reduce the temperature of some components in the deposition cavity to prevent the wafer from adhering to the components in the deposition cavity.

[0006] The purpose of the present utility model is to provide a deposition equipment for reducing the temperature of a shutter, which includes a cavity, a carrier plate, a retaining ring, a shutter, and a cooling device. The carrier plate is used to carry at least one wafer. One end of the shutter is connected to the cavity, and the other end is used to carry the retaining ring. When the carrier plate drives the carried wafer to move towards the retaining ring, the retaining ring contacts the edge of the wafer to fix the wafer on the carrier plate, and a reaction space is formed between the shutter, the retaining ring, the carrier plate, and / or the cavity.

[0007] The cooling device contacts the retaining ring and / or the shield, and has circulating cooling fluid inside. The cooling device absorbs heat from the retaining ring and / or the shield through thermal conduction, thereby reducing the temperature of the retaining ring and / or the shield and effectively preventing adhesion between the wafer and the retaining ring.

[0008] One objective of this invention is to provide a deposition apparatus for reducing the temperature of the shielding plate. The cooling device continuously absorbs heat from the fixing ring and / or shielding plate during film deposition to prevent excessively high temperatures in the fixing ring and / or shielding plate. By incorporating the cooling device, the deposition process can be continued without interruption, and cooling gas can be injected into the cavity to reduce the temperature of the internal components, thereby improving the efficiency and throughput of the deposition process.

[0009] One objective of this invention is to provide a deposition apparatus for reducing the temperature of the shielding plate, wherein the cooling fluid in the cooling device can be an inert gas or a non-reactive gas, so that even if the cooling fluid leaks into the cavity, it will not cause contamination to the components and wafers inside the cavity, and will help improve the safety of use.

[0010] To achieve the above objectives, this utility model proposes a deposition apparatus for reducing the temperature of a shield, comprising: a cavity having a receiving space and an exhaust port connected to the receiving space, wherein the exhaust port is connected to a vacuum pump, and the vacuum pump extracts gas from the receiving space of the cavity through the exhaust port; a shield connected to the cavity and located within the receiving space of the cavity, wherein the shield includes an annular protrusion; a fixing ring located within the receiving space of the cavity and disposed on the annular protrusion of the shield; a cooling device contacting the fixing ring and reducing the temperature of the fixing ring by a cooling fluid within the cooling device; and a support plate disposed within the receiving space of the cavity and located below the fixing ring, wherein the support plate is used to support a wafer.

[0011] The deposition equipment for reducing the temperature of the shielding plate includes a cooling device comprising a cooling line and a pump, the cooling line contacting a retaining ring, and the pump for delivering cooling fluid to the cooling line.

[0012] The deposition apparatus for reducing the temperature of the shield includes a shield comprising at least one perforation, through which cooling lines pass and contact a retaining ring.

[0013] The deposition apparatus for reducing the temperature of the shielding plate includes a cooling pipeline comprising an annular cooling section and two delivery pipelines. The annular cooling section contacts a fixed ring, and cooling fluid is delivered to the annular cooling section by one of the delivery pipelines and exits the annular cooling section through the other delivery pipeline.

[0014] The deposition apparatus for reducing the temperature of the shielding plate includes an annular cooling section of a cooling pipeline disposed on the shielding plate and in contact with the shielding plate and the fixing ring, while the delivery pipeline of the cooling pipeline passes through the perforation of the shielding plate and is connected to the annular cooling section.

[0015] The deposition apparatus described herein for reducing the temperature of the shielding plate, wherein an annular cooling section is disposed inside the fixed ring.

[0016] The deposition apparatus for reducing the temperature of the shield includes a shield comprising a side wall and an annular bottom. The side wall is used to connect to the cavity, while the annular bottom connects the side wall and an annular protrusion. The annular protrusion is located inside the side wall and is used to support a fixing ring.

[0017] The deposition apparatus for reducing the temperature of the baffle plate includes a fixing ring comprising a fixing part and a baffle part. The annular protrusion of the baffle plate is used to support the fixing part of the fixing ring, while the baffle part of the fixing ring is located between the side wall of the baffle plate and the annular protrusion.

[0018] The deposition apparatus for reducing the temperature of the shielding plate includes a cooling line comprising an annular cooling section and at least one delivery line, wherein the annular cooling section is connected to the delivery line and contacts the shielding section of the fixed ring.

[0019] The deposition apparatus described herein for reducing the temperature of the shielding plate, wherein the cooling fluid is an inert gas or a non-reactive gas.

[0020] The deposition apparatus for reducing the temperature of the shielding plate described in this utility model has the following advantages: the temperature of the shielding plate and / or the retaining ring can be controlled during the deposition process, which can prevent the formation of a thin film at the interface between the retaining ring and the wafer, and can effectively prevent adhesion between the retaining ring and the wafer. Attached Figure Description

[0021] Figure 1 This is a cross-sectional schematic diagram of an embodiment of the deposition apparatus of the present invention for reducing the temperature of the shielding plate.

[0022] Figure 2 This is a cross-sectional schematic diagram of an embodiment of the deposition equipment of the present invention used to reduce the temperature of the baffle plate, in the feeding and discharging state.

[0023] Figure 3 This is a three-dimensional cross-sectional schematic diagram of a partial structure embodiment of the deposition apparatus of the present invention for reducing the temperature of the shielding plate.

[0024] Figure 4 This is a perspective view of an embodiment of the fixing ring and cooling pipeline of the deposition equipment used to reduce the temperature of the shielding plate according to the present invention.

[0025] Figure 5This is a cross-sectional schematic diagram of another embodiment of the fixing ring and cooling pipeline of the deposition equipment for reducing the temperature of the shielding plate according to this utility model.

[0026] Figure 6 This is a cross-sectional schematic diagram of another embodiment of the fixing ring and cooling pipeline of the deposition equipment for reducing the temperature of the shielding plate according to this utility model.

[0027] Explanation of reference numerals in the attached figures

[0028] 10: Deposition equipment used to reduce the temperature of the shielding plate;

[0029] 11: Cavity;

[0030] 111: Storage space;

[0031] 112: Reaction space;

[0032] 113: Wafer import / export;

[0033] 115: Air extraction port;

[0034] 12: Wafer;

[0035] 13: Support plate;

[0036] 14: Target material;

[0037] 15: Sheath;

[0038] 151: Side wall;

[0039] 152: Perforation;

[0040] 153: Circular bottom;

[0041] 155: Annular protrusion;

[0042] 16: Vacuum pump;

[0043] 161: Valve;

[0044] 17: Retaining ring;

[0045] 171: Fixing part;

[0046] 173: Obstruction area;

[0047] 19: Cooling device;

[0048] 191: Cooling pipes;

[0049] 1911: Annular cooling section;

[0050] 1913: Delivery pipeline;

[0051] 193: Pump;

[0052] 195: Cold Bar. Detailed Implementation

[0053] Please see Figure 1 This is a cross-sectional schematic diagram of an embodiment of the deposition apparatus for reducing the temperature of the shielding plate according to the present invention. As shown in the figure, the deposition apparatus 10 for reducing the temperature of the shielding plate includes a cavity 11, a support plate 13, a shielding plate 15, a fixing ring 17, and a cooling device 19. The shielding plate 15 is used to support the fixing ring 17, and the support plate 13 is located below the fixing ring 17 and / or the shielding plate 15. The support plate 13 can be used to drive the supported wafer 12 to move relative to the fixing ring 17 and the shielding plate 15.

[0054] In one embodiment of the present invention, the cooling device 19 may include a cooling pipeline 191, a pump 193, and a cooling tank 195. The cavity 11 has an accommodating space 111, and the bearing plate 13, the baffle plate 15, the fixing ring 17, and the cooling pipeline 191 are disposed in the accommodating space 111 of the cavity 11.

[0055] like Figure 3 As shown, the baffle 15 includes a side wall 151, an annular bottom 153, and an annular protrusion 155. The annular bottom 153 connects the side wall 151 and the annular protrusion 155. In one embodiment of the present invention, the side wall 151 of the baffle 15 has an appearance similar to a hollow column or a hollow frustum. The side wall 151 of the baffle 15 is connected to the cavity 11 to mount the baffle 15 on the cavity 11, and the other end of the side wall 151 is connected to the annular bottom 153.

[0056] The annular bottom 153 has an approximate circular shape, with one end connected to the sidewall 151 of the baffle 15. The annular protrusion 155 has an approximate hollow columnar or hollow frustum shape, with one end connected to the other end of the annular bottom 153, and forming a circular opening on the radially inner side of the annular protrusion 155. Specifically, the sidewall 151 and the annular protrusion 155 are respectively connected to the two ends of the annular bottom 153 and protrude or extend in the same direction, wherein the annular protrusion 155 is located inside the sidewall 151, and the height and circumference of the sidewall 151 are greater than those of the annular protrusion 155.

[0057] like Figure 2 , Figure 3 As shown, the fixing ring 17 includes a fixing part 171 and a blocking part 173. The fixing part 171 may be annular, while the blocking part 173 is approximately a hollow column or a hollow frustum. The blocking part 173 is arranged around the annular fixing part 171.

[0058] The fixing ring 17 is used to be disposed on the cover plate 15. For example, the annular protrusion 155 of the cover plate 15 is used to connect to and support the fixing part 171 of the fixing ring 17, wherein the blocking part 173 of the fixing ring 17 is located outside the annular protrusion 155 and between the annular protrusion 155 and the side wall 151.

[0059] The carrier disk 13 is located below the retaining ring 17 and is used to carry at least one wafer 12. The carrier disk 13 can move the carried wafer 12 relative to the retaining ring 17 and / or the shield 15. Figure 2 As shown, a wafer inlet / outlet 113 is provided on the cavity 11, wherein the carrier plate 13 can be displaced away from the fixing ring 17 and / or the shield 15, so that the height of the carrier plate 13 is similar to that of the wafer inlet / outlet 113. Then, a robotic arm can place the wafer 12 outside the cavity 11 onto the carrier plate 13 through the wafer inlet / outlet 113, or transport the wafer 12 on the carrier plate 13 to the outside of the cavity 11 through the wafer inlet / outlet 113.

[0060] In one embodiment of this invention, the deposition apparatus 10 used to reduce the temperature of the shield can be a physical vapor deposition apparatus, and a target 14 is disposed within a cavity 11, wherein the target 14 faces the carrier disk 13 and / or the wafer 12. A suction port 115 is provided on the cavity 11, and the gas inside the cavity 11 is extracted through the suction port 115 of a vacuum pump 16, making the accommodating space 111 low pressure or vacuum. A valve 161 can be disposed between the vacuum pump 16 and the accommodating space 111 of the cavity 11, and the valve 161 can be closed after the vacuum pump 16 extracts the gas from the cavity 11.

[0061] A process gas can be supplied to the containment space 111 for deposition processing; for example, the process gas can be an inert gas or a reactive gas. The deposition apparatus 10 used to reduce the shielding temperature is a physical vapor deposition device, but this is only one embodiment of the present invention and is not a limitation of the scope of the present invention. In different embodiments, the deposition apparatus 10 used to reduce the shielding temperature can be an atomic layer deposition device or a plasma etching device.

[0062] like Figure 1As shown, the carrier disk 13 can move the supported wafer 12 towards the fixing ring 17, the shield 15, and / or the target 14, so that the carrier disk 13 is located inside the shield 15, and the fixing part 171 of the fixing ring 17 contacts the edge of the wafer 12 on the carrier disk 13 to fix the wafer 12 on the carrier disk 13. At this time, the carrier disk 13, the fixing ring 17, the shield 15, and the cavity 11 define a reaction space 112 within the accommodating space 111, and perform thin film deposition on the surface of the wafer 12 within the reaction space 112. The reaction space 112 is basically an isolated space within the accommodating space 111, in which the reaction gas, target atoms, and / or target molecules within the reaction space 112 will not come into contact with the cavity 11 outside the shield 15, so as to avoid the deposition of thin film on the surface of the cavity 11 and thus prevent contamination of the cavity 11.

[0063] During the thin film deposition process, the mask 15 and the fixing ring 17 are kept at high temperatures for a long time, and a metal thin film is deposited on the surface of the wafer 12, the mask 15, and the fixing ring 17. When the temperature of the mask 15 and the fixing ring 17 is greater than or equal to the melting point of the deposited metal, the deposited metal may flow between the fixing ring 17 and the wafer 12, for example, from the fixing ring 17 to the wafer 12, so that there is deposited metal at the interface between the two.

[0064] When the temperature inside cavity 11 decreases, the deposited metal between the retaining ring 17 and the wafer 12 will solidify, causing the retaining ring 17 and the wafer 12 to adhere to each other. When the carrier disk 13 moves the wafer 12 away from the retaining ring 17 and the shield 15, the retaining ring 17 will pull the wafer 12 through the solidified deposited metal, causing the wafer 12 to shift relative to the carrier disk 13. This can lead to abnormalities in the subsequent positioning and transport of the wafer 12; for example, the robotic arm may be unable to grasp the shifted wafer 12 on the carrier disk 13. In addition, when the adhesion between the retaining ring 17 and the wafer 12 is severe, the solidified deposited metal between the retaining ring 17 and the wafer 12 may pull the wafer 12, causing damage to the wafer 12 or the metal film on the surface of the wafer 12.

[0065] Taking a thick aluminum film as an example, the molten aluminum film may flow between the retaining ring 17 and the wafer 12, causing the retaining ring 17 to stick to the wafer 12. Furthermore, during the deposition of the thick aluminum film, the temperature inside the wafer 12 and the cavity 11 must be controlled within an appropriate range. However, during deposition, the plasma heats the retaining ring 17 and the shield 15 for an extended period, causing their temperatures to rise and storing a considerable amount of heat. The high-temperature retaining ring 17 transfers heat to the wafer 12, causing the edge of the wafer 12 to become excessively hot. This not only causes fogging of the film deposited at the edge of the wafer 12 but may also lead to whisker defects and hillock defects, resulting in uneven film deposition quality between the center and edges of the wafer 12.

[0066] To avoid the aforementioned problems, the deposition process is typically temporarily halted, and cooling gas is supplied to the cavity 11 to reduce the temperature of the shield 15 and the retaining ring 17. While this reduces the unevenness of film quality between the center and edges of the wafer 12, it also reduces the efficiency and throughput of the deposition process.

[0067] In order to effectively solve the above problems, the present invention proposes to provide a cooling device 19 in the deposition equipment 10 used to reduce the temperature of the shield, wherein the cooling device 19 contacts the fixing ring 17 and reduces the temperature of the fixing ring 17 by a cooling fluid in the cooling device 19.

[0068] In one embodiment of this utility model, the cooling device 19 includes a cooling pipeline 191 and a pump 193, wherein the cooling pipeline 191 is disposed in the cavity 11 and contacts the retaining ring 17. The pump 193 is used to deliver cooling fluid to the cooling pipeline 191, so that the cooling fluid reduces the temperature of the retaining ring 17 by passing through the cooling pipeline 191.

[0069] The cooling device 19 includes a cold tank 195, through which a cooling line 191 is connected to the cold tank 195 via a pump 193. The pump 193 and the cold tank 195 are located outside the cavity 11. The cold tank 195 stores or generates a cooling fluid, while the pump 193 delivers the cooling fluid from the cold tank 195 to the cooling line 191. The cooling fluid can be an inert gas or a non-reactive gas, such as helium, argon, or nitrogen. This ensures that even if the cooling fluid leaks from the cooling line 191 into the cavity 111's containment space, it will not contaminate the cavity 11, its internal components, or the wafer 12.

[0070] The cold bath 195 may include a compressor that can compress and cool the gas into a liquid or gas-liquid mixture when the cooling fluid is in a gaseous state at room temperature, such as liquid helium, gas-liquid mixture of helium, liquid argon, gas-liquid mixture of argon, liquid nitrogen, or gas-liquid mixture of nitrogen. The pump 193 can deliver the liquid or gas-liquid mixture of cooling fluid to the cooling line 191, allowing the liquid or gas-liquid mixture of cooling fluid to absorb heat from the stationary ring 17 and convert into a gaseous cooling fluid.

[0071] In one embodiment of this utility model, such as Figure 3 As shown, at least one perforation 152 may be provided on the baffle 15. The cooling line 191 includes an annular cooling section 1911 and at least one conveying line 1913, wherein the conveying line 1913 passes through the perforation 152 on the baffle 15, such that the conveying line 1913 is connected to the annular cooling section 1911 located on the other side of the baffle 15. For example, the conveying line 1913 may pass through the perforation provided on the side wall 151 or the annular bottom 153.

[0072] In one embodiment of this utility model, such as Figure 4 As shown, the cooling line 191 may include an annular cooling section 1911 and two delivery lines 1913, wherein the annular cooling section 1911 contacts the retaining ring 17. The two delivery lines 1913 pass through the perforations 152 of the baffle 15 and connect to the annular cooling section 1911, with one delivery line 1913 used to deliver cooling fluid to the annular cooling section 1911. After passing through the annular cooling section 1911, the cooling fluid exits the annular cooling section 1911 via the other delivery line 1913. In practical applications, the cooling line 191, the annular cooling section 1911, and / or the delivery lines 1913 may be made of a metal with high thermal conductivity, such as copper or soft metal tubing.

[0073] The size of the annular cooling section 1911 can be similar to that of the fixed ring 17. For example, the shielding part 173 of the annular cooling section 1911 and the fixed ring 17 can be a ring with a similar shape and size when viewed from above. The shielding part 173 can be a hollow cylinder, while the annular cooling section 1911 can be a ring with a similar circumference. This increases the contact area between the annular cooling section 1911 and the shielding part 173, and facilitates the absorption of heat from the shielding part 173 and the fixed part 171 by the cooling fluid inside the annular cooling section 1911.

[0074] In one embodiment of this invention, a liquid or gas-liquid mixture of cooling fluid can be transported to an annular cooling section 1911 via one of the delivery lines 1913. Within the annular cooling section 1911, the liquid or gas-liquid mixture of cooling fluid absorbs heat from the fixed ring 17 through heat conduction, thereby reducing the temperature of the fixed ring 17. After absorbing heat, the liquid or gas-liquid mixture of cooling fluid transforms into a gaseous state and exits the annular cooling section 1911 via another delivery line 1913. Furthermore, a pump 193 can transport the gaseous cooling fluid to a cooling tank 195, where the gaseous cooling fluid is compressed and cooled into a liquid or gas-liquid mixture. This liquid or gas-liquid mixture is then transported back to the annular cooling section 1911 via the delivery line 1913, thereby reducing the temperature of the fixed ring 17 through the circulating cooling fluid.

[0075] In one embodiment of this utility model, the annular cooling portion 1911 can be located between the baffle 15 and the fixing ring 17, and respectively contact the baffle 15 and the fixing ring 17 to reduce the temperature of the baffle 15 and the fixing ring 17. For example, the annular cooling portion 1911 can be disposed on the annular bottom 153 of the baffle 15, or disposed between the annular bottom 153 and the annular protrusion 155. When the fixing ring 17 is placed on the annular protrusion 155 of the baffle 15, the bottom of the baffle portion 173 of the fixing ring 17 will contact the annular cooling portion 1911.

[0076] In practical applications, the fixing ring 17 and / or the baffle 15 are mainly cooled by the annular cooling section 1911 of the cooling pipeline 191. The conveying pipeline 1913 of the cooling pipeline 191 is mainly used to convey cooling fluid, rather than to cool the fixing ring 17 and / or the baffle 15. Therefore, the conveying pipeline 1913 and the annular cooling section 1911 can be made of different materials, wherein the thermal conductivity of the annular cooling section 1911 can be greater than that of the conveying pipeline 1913. For example, the conveying pipeline 1913 can be made of a material with low thermal conductivity, while the annular cooling section 1911 can be made of a material with high thermal conductivity. In another embodiment of this invention, a layer of heat-insulating material can be wrapped around the outside of the conveying pipeline 1913.

[0077] To increase the contact area between the annular cooling section 1911 and the fixed ring 17, thereby improving the heat transfer efficiency between them, the top of the annular cooling section 1911 can have a similar or corresponding cross-sectional shape to the bottom of the shielding portion 173 of the fixed ring 17. For example... Figure 1 As shown, when the bottom of the shielding part 173 is a plane, the top of the annular cooling part 1911 can also be a plane, so that the bottom of the shielding part 173 can fit against the top of the annular cooling part 1911.

[0078] In different embodiments, such as Figure 5As shown, when the bottom of the shielding part 173 is a concave surface or an annular groove, the top of the annular cooling part 1911 can be a convex surface or an annular protrusion, so that the bottom of the shielding part 173 can fit against the top of the annular cooling part 1911. When the bottom of the shielding part 173 is a convex surface or an annular protrusion, the top of the annular cooling part 1911 can be a concave surface or an annular groove.

[0079] In another embodiment of this utility model, such as Figure 6 As shown, the annular cooling section 1911 can be disposed inside the fixed ring 17 and connected to the annular cooling section 1911 located inside the fixed ring 17 via a delivery pipeline 1913 to improve the efficiency of heat conduction. For example, it can be disposed inside the shielding section 173 of the fixed ring 17.

[0080] The deposition apparatus 10 described in this invention, used to reduce the temperature of the shielding plate, can continuously absorb heat from the fixing ring 17 and / or the shielding plate 15 during the thin film deposition process through the cooling device 19. This prevents the temperature of the fixing ring 17 and / or the shielding plate 15 from becoming too high and reduces the formation of a metal thin film between the fixing ring 17 and the wafer 12. Furthermore, the cooling device 19 allows for uninterrupted thin film deposition over a long period, which is beneficial for improving the efficiency and throughput of the deposition process.

[0081] The above description is merely a preferred embodiment of the present utility model and is not intended to limit the scope of the present utility model. All equivalent changes and modifications made in accordance with the shape, structure, features and spirit described in the claims of the present utility model should be included in the scope of the claims of the present utility model.

Claims

1. A deposition apparatus for reducing the temperature of a shielding plate, characterized in that, include: A cavity having a receiving space and an exhaust port connected to the receiving space, wherein the exhaust port is connected to a vacuum pump, and the vacuum pump extracts gas from the receiving space of the cavity through the exhaust port. A baffle plate is connected to the cavity and located within the receiving space of the cavity, wherein the baffle plate includes an annular protrusion; A fixing ring is located within the accommodating space of the cavity and is disposed on the annular protrusion of the baffle. A cooling device contacts the retaining ring and reduces the temperature of the retaining ring by a cooling fluid within the cooling device; and A carrier disk is disposed within the accommodating space of the cavity and located below the fixing ring, wherein the carrier disk is used to carry a wafer.

2. The deposition apparatus for reducing the temperature of the shielding plate as described in claim 1, characterized in that, The cooling device includes a cooling line and a pump, the cooling line contacting the retaining ring, and the pump delivering the cooling fluid to the cooling line.

3. The deposition apparatus for reducing the temperature of the shielding plate as described in claim 2, characterized in that, The baffle includes at least one perforation through which the cooling line passes and contacts the retaining ring.

4. The deposition apparatus for reducing the temperature of the shielding plate as described in claim 3, characterized in that, The cooling pipeline includes an annular cooling section and two delivery pipelines. The annular cooling section contacts the fixed ring, and the cooling fluid is delivered to the annular cooling section by one of the delivery pipelines and exits the annular cooling section through the other delivery pipeline.

5. The deposition apparatus for reducing the temperature of the shielding plate as described in claim 4, characterized in that, The annular cooling section of the cooling pipeline is disposed on the baffle plate and contacts the baffle plate and the fixing ring, while the delivery pipeline of the cooling pipeline passes through the perforation of the baffle plate and is connected to the annular cooling section.

6. The deposition apparatus for reducing the temperature of the shielding plate as described in claim 4, characterized in that, The annular cooling section is located inside the fixed ring.

7. The deposition apparatus for reducing the temperature of the shielding plate as described in claim 2, characterized in that, The baffle includes a side wall and an annular bottom. The side wall is used to connect the cavity, and the annular bottom connects the side wall and the annular protrusion. The annular protrusion is located inside the side wall and is used to support the fixing ring.

8. The deposition apparatus for reducing the temperature of the shielding plate as described in claim 7, characterized in that, The fixing ring includes a fixing part and a blocking part. The annular protrusion of the blocking plate is used to support the fixing part of the fixing ring, while the blocking part of the fixing ring is located between the side wall of the blocking plate and the annular protrusion.

9. The deposition apparatus for reducing the temperature of the shielding plate as described in claim 8, characterized in that, The cooling pipeline includes an annular cooling section and at least one delivery pipeline. The annular cooling section is connected to the delivery pipeline and contacts the shielding part of the fixing ring.

10. The deposition apparatus for reducing the temperature of the shielding plate as described in claim 1, characterized in that, The cooling fluid is an inert gas or a non-reactive gas.

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