Chemical vapor deposition chamber and production system

Abstract

The embodiment of the utility model provides a chemical vapor deposition chamber and a production system, and belongs to the technical field of semiconductors. The electric field generator comprises at least one electrode and a bearing surface, the electric field generator is located in the chamber main body, the bearing surface and the corresponding electrode are arranged at an interval, the bearing surface is insulated from the corresponding electrode, the nozzle is located in the chamber main body, and the plasma generator is located in the chamber main body. An electric field is formed between a semiconductor wafer and an electrode, nanowires directly grow on the semiconductor wafer through a chemical vapor deposition method under the action of the electric field, the production process of the nanowires is simple, compatibility with an existing process is good, integration of a nanowire production line is facilitated, the nanowires grow on the semiconductor wafer through the chemical vapor deposition method, and the production efficiency is improved. The method is not limited to the nanowire material, other compounds containing related elements can react to generate the nanowire material, the limitation on the variety of the nanowire material is small, and the selection range of the nanowire material is wider.

Description

TECHNICAL FIELD

[0001] The present application relates to the technical field of semiconductor, and in particular to a chemical vapor deposition chamber and production system. BACKGROUND

[0002] Semiconductor nanowires can be used in photodetectors, avalanche photodiodes, light-emitting diodes, lasers, solar cells, biosensors, single-photon sources, and other fields, and have attracted widespread attention.

[0003] In the related art, it is difficult to directly grow nanowires on a semiconductor wafer. SUMMARY

[0004] To solve the problems in the related art, embodiments of the present application provide a chemical vapor deposition chamber and production to directly grow nanowires on a semiconductor wafer.

[0005] The technical solutions of the embodiments of the present application are implemented as follows:

[0006] The first aspect of the embodiments of the present application provides a chemical vapor deposition chamber, comprising:

[0007] a chamber body;

[0008] an electric field generator comprising at least one electrode and a bearing surface, the electric field generator being located in the chamber body, the bearing surface being arranged spaced apart from the corresponding electrode, and the bearing surface being insulated from the corresponding electrode;

[0009] a showerhead located in the chamber body;

[0010] a plasma generator located in the chamber body.

[0011] In an embodiment, the electric field generator further comprises a carrier located in the chamber body, and the bearing surface is formed on the carrier.

[0012] In an embodiment, the carrier is movably mounted on the electrode.

[0013] In an embodiment, the carrier comprises:

[0014] a bearing body, the bearing surface being formed on the bearing body, and the bearing body being arranged spaced apart from the electrode;

[0015] a moving column connected to the bearing body, the moving column being movably mounted on the electrode, and the moving column being capable of moving relative to the electrode along the arrangement direction of the bearing surface and the electrode;

[0016] wherein the moving column and / or the bearing body are insulated from the electrode, so that the bearing surface is insulated from the electrode.

[0017] In one embodiment, the carrier body is annular, and the carrier surface is located on a side of the carrier body facing away from the electrode.

[0018] In one embodiment, the carrier is connected to the showerhead, and the carrier is located on a side of the showerhead facing the electrode.

[0019] In one embodiment, the chemical vapor deposition chamber further comprises a driving device, and the electrode is mounted to the driving device so that the driving device can drive the electrode to move to make the electrode approach or move away from the carrier.

[0020] In one embodiment, the carrier surface is located on a side of the carrier facing away from the electrode, and the carrier has a bypass hole communicating between a side of the carrier facing the electrode and a side of the carrier facing away from the electrode.

[0021] In one embodiment, the carrier further has a gas permeable hole communicating between a side of the carrier facing the electrode and a side of the carrier facing away from the electrode.

[0022] In one embodiment, the electrode has a plate shape.

[0023] In one embodiment, the electrode is a charged heater for heating the chamber body.

[0024] In one embodiment, the chemical vapor deposition chamber further comprises a gas supply device having a gas outlet for outputting reaction gas for chemical vapor deposition to the chamber body.

[0025] In one embodiment, the gas outlet is located between the carrier surface and the electrode along the arrangement direction of the carrier surface and the electrode.

[0026] In one embodiment, the arrangement direction of the gas supply device and the electrode intersects with the arrangement direction of the carrier surface and the electrode.

[0027] In one embodiment, the showerhead is located on a side of the carrier surface facing away from the electrode along the arrangement direction of the carrier surface and the electrode.

[0028] In one embodiment, the electrode and the carrier surface are arranged along a vertical direction.

[0029] In one embodiment, the electrode is a charged heater for heating the chamber body, the showerhead, the carrier, and the electrode are arranged along the vertical direction in sequence, and the showerhead is located above the electrode.

[0030] A second aspect of this application provides a production system comprising the chemical vapor deposition chamber described above.

[0031] In one embodiment, the production system further includes:

[0032] A flipping assembly includes a stage and a flipping device. The stage is used to place a semiconductor wafer before it is moved into the chemical vapor deposition chamber or after it is moved out of the chemical vapor deposition chamber. The flipping device is used to flip the semiconductor wafer on the stage.

[0033] A conveying device for conveying the semiconductor wafer, each conveying device corresponding to at least one chemical vapor deposition chamber.

[0034] This application provides a chemical vapor deposition chamber and production system. A support surface and electrodes are spaced apart and insulated from each other. The semiconductor wafer on the support surface is not conductive to the electrodes, allowing a capacitor structure to be formed between the electrodes and the semiconductor wafer. The side of the semiconductor wafer facing the electrodes is the front side of the semiconductor wafer. A nozzle sprays a preset gas into the chamber body. A plasma generator ionizes the preset gas into plasma gas. The charged plasma gas accumulates on the semiconductor wafer, charging it. An electric field generator applies a voltage to the electrodes, charging them as well. This creates an electric field between the semiconductor wafer and the electrodes. Under the influence of this electric field, the reactive gas in the chamber body undergoes a chemical reaction, depositing and growing nanowires on the semiconductor wafer. The nanowires are grown directly on the semiconductor wafer, eliminating the need to first generate nanowires and then transfer them to the wafer. This method offers good compatibility with existing processes, reduces production steps, simplifies the nanowire production process, and facilitates the integration of nanowire production lines. Nanowires can be grown on semiconductor wafers using chemical vapor deposition. This method is not limited to nanowire materials themselves; other compounds containing relevant elements can be reacted to generate nanowire materials. This method has fewer restrictions on the types of nanowire materials and allows for a wider selection of nanowire materials. Attached Figure Description

[0035] Figure 1 This is a schematic diagram of the structure of the chemical vapor deposition chamber according to an embodiment of this application, showing the carrier mounted on the electrode;

[0036] Figure 2 for Figure 1 Draw a sectional view from AA;

[0037] Figure 3 This is a schematic diagram of the chemical vapor deposition chamber according to an embodiment of this application, showing the carrier installed on the nozzle;

[0038] Figure 4Figure 1 is a schematic view of a semiconductor wafer placed on electrodes, showing the front side of the semiconductor wafer facing upwardly;

[0039] Figure 5 Figure 2 is a schematic view of a flipper assembly according to an embodiment of the present application, showing the front side of the semiconductor wafer facing upwardly before the semiconductor wafer is flipped;

[0040] Figure 6 Figure 3 is a schematic view of a flipper assembly according to an embodiment of the present application, showing the front side of the semiconductor wafer facing downwardly after the semiconductor wafer is flipped;

[0041] Figure 7 Figure 4 is a sectional view taken along line B-B in Figure 1 ; Figure 3

[0042] Figure 8 Figure 5 is a projection view taken along line C in Figure 1. Figure 4

[0043] BRIEF DESCRIPTION OF DRAWINGS

[0044] 1. chamber body; 2. electric field generator; 21. electrode; 21a. electrode; 21b. electrode; 21c. electrode; 22. bearing surface; 23. carrier; 231. bearing body; 232. moving column; 233. avoiding hole; 234. air-permeable hole; 24. support; 3. showerhead; 4. plasma generator; 5. gas supply device; 51. gas outlet; 6. driving device; 7. exhaust gas collecting device; 8. semiconductor wafer; 9. flipper assembly; 91. bearing table; 92. flipper device; 921. clamping ring; 922. needle-shaped clamp. DETAILED DESCRIPTION

[0045] In order to make the objectives, technical solutions and advantages of the present application clearer, the present application will be further described in detail below with reference to the accompanying drawings and embodiments. It should be understood that the specific embodiments described herein are only used to explain the present application and should not be used to limit the present application.

[0046] In the specific embodiments, each specific technical feature described can be combined in any suitable manner without contradiction, for example, different embodiments and technical solutions can be formed by combining different specific technical features. In order to avoid unnecessary repetition, various possible combinations of each specific technical feature in the present application are not described again.

[0047] ​​In the following description, the terms "first," "second," etc., are used merely to distinguish different objects and do not indicate that the objects have the sameness or relationship. It should be understood that the directional descriptions "above," "below," "outside," and "inside" refer to the directions in normal use, while "left" and "right" refer to the left and right directions shown in the corresponding diagrams, which may or may not be the left and right directions in normal use.

[0048] It should be noted that the terms "comprising," "including," or any other variations thereof are intended to cover non-exclusive inclusion, such that a process, method, article, or apparatus that comprises a list of elements includes not only those elements but also other elements not expressly listed, or elements inherent to such a process, method, article, or apparatus. Unless otherwise specified, an element defined by the phrase "comprising one..." does not exclude the presence of other identical elements in the process, method, article, or apparatus that includes that element. "A plurality of" means two or more.

[0049] In related technologies, nanowires on semiconductor crystals are mainly prepared by solution method combined with electrospinning, electrochemical method and chemical epitaxy. Typically, nanowires need to be deposited on a substrate first, and then the nanowires on the substrate are transferred to the semiconductor wafer. It is difficult to directly generate nanowires on the semiconductor wafer, and the nanowire fabrication process is complicated.

[0050] This application provides an embodiment of a chemical vapor deposition chamber; please refer to [link to relevant documentation]. Figures 1-4 The chemical vapor deposition chamber includes a chamber body 1, an electric field generator 2, a nozzle 3, a plasma generator, and a gas supply device 5. The electric field generator 2 includes at least one electrode 21 and a bearing surface 22. The electric field generator 2 is located inside the chamber body 1. The bearing surface 22 is arranged at intervals with the corresponding electrode 21 and is insulated from the corresponding electrode 21. The nozzle 3 is located inside the chamber body 1, and the plasma generator is located inside the chamber body 1.

[0051] It should be noted that the front side of semiconductor wafer 8 refers to the surface used for the fabrication and processing of integrated circuits. The front side of semiconductor wafer 8 is a specially treated and polished surface with good flatness and smoothness to facilitate micro-processing such as photolithography.

[0052] For example, the nozzle 3 is used to spray at least a preset gas into the chamber body 1.

[0053] For example, a plasma generator is used to ionize a preset gas within the chamber body 1 into plasma.

[0054] For example, a chemical vapor deposition chamber is used to grow nanowires on a semiconductor wafer 8.

[0055] The carrier surface 22 is used to carry the semiconductor wafer 8.

[0056] It can be understood that the chamber body 1 has reaction gas for chemical vapor deposition.

[0057] It should be noted that the front surface of the semiconductor wafer 8 is not limited to face upward, and the front surface of the semiconductor wafer 8 can also face downward. The electrode 21 capable of forming an electric field with the semiconductor wafer 8 is the corresponding electrode 21 of the semiconductor wafer 8, and the side of the semiconductor wafer 8 facing the corresponding electrode 21 is the front surface of the semiconductor wafer 8.

[0058] It should be noted that the semiconductor wafer 8 is placed on the carrier surface 22, and the corresponding electrode 21 is the electrode 21 to which a voltage is applied to generate an electric field between the electrode 21 and the semiconductor wafer 8. Among the two adjacent electrodes 21, the corresponding electrode is not the electrode 21 on which the carrier surface 22 is located, and the carrier surface 22 of one of the electrodes 21 is spaced apart from the other electrode 21, and the other electrode 21 is the corresponding electrode.

[0059] Exemplarily, the preset gas is an inert gas.

[0060] Exemplarily, the preset gas is nitrogen.

[0061] Exemplarily, the semiconductor wafer 8 is a wafer.

[0062] In the embodiment of the present application, the carrier surface 22 is arranged to be spaced apart from the electrode 21, the carrier surface 22 is insulated from the electrode 21, the semiconductor wafer 8 on the carrier surface 22 does not conduct electricity with the electrode 21, so that a capacitor structure can be formed between the electrode 21 and the semiconductor wafer 8, and the side of the semiconductor wafer 8 facing the electrode 21 is the front surface of the semiconductor wafer 8. The showerhead 3 sprays the preset gas into the chamber body 1, the plasma generator 4 can ionize the preset gas into plasma gas, the charged plasma gas is gathered on the semiconductor wafer 8 to make the semiconductor wafer 8 charged, the electric field generator 2 applies a voltage to the electrode 21 to make the electrode 21 charged, so that an electric field can be formed between the semiconductor wafer 8 and the electrode 21, under the action of the electric field, the reaction gas in the chamber body 1 reacts chemically to deposit and grow nanowires on the semiconductor wafer 8. The nanowires are directly grown on the semiconductor wafer 8, without the need to first generate nanowires and then transfer them to the semiconductor wafer 8, which has good compatibility with the existing process, reduces the production steps, and simplifies the nanowire production process, facilitating the integration of the nanowire production line. By growing nanowires on the semiconductor wafer 8 through chemical vapor deposition, the nanowire material is not limited to the nanowire material itself, but can be other compounds containing related elements, which has less restriction on the type of nanowire material and wider selection of nanowire material.

[0063] For example, when the material required for preparing the nickel nanowire is nickel oxide, a nickel-containing compound material can be selected to react with a relevant reaction gas to generate nickel oxide, and then the nickel nanowire is grown.

[0064] For example, the side of the semiconductor wafer 8 facing the electrode 21 is the front side of the semiconductor wafer 8, and the nanowire is directly grown on the front side of the semiconductor wafer 8.

[0065] For the convenience of illustration, the direction indicated by the arrow R1 in the figure is the arrangement direction of the bearing surface 22 and the electrode 21, and the direction indicated by the arrow R2 in the figure is the arrangement direction of the gas supply device 5 and the electrode 21.

[0066] For example, the up-down direction is parallel to the arrangement direction of the bearing surface 22 and the electrode 21.

[0067] In an embodiment, referring to Figure 4 and Figure 8 , the electric field generator 2 comprises a support 24 and at least two electrodes, the electrodes 21a, 21b and 21c are arranged on the support 24 at intervals, the semiconductor wafer 8 is placed on the bearing surface 22, the bearing surface 22 on the electrode 21b is spaced apart from the electrode 21a located above the semiconductor wafer 8, and the bearing surface 22 on the electrode 21c is spaced apart from the electrode 21b located above the semiconductor wafer 8. An electric field is generated between the semiconductor wafer 8 on the electrode 21b and the electrode 21a above it, and an electric field is generated between the semiconductor wafer 8 on the electrode 21c and the electrode 21b above it. The corresponding electrode of the bearing surface 22 on the electrode 21b is the electrode 21a, and the corresponding electrode of the bearing surface 22 on the electrode 21c is the electrode 21b.

[0068] For example, the electric field generator 2 can not include the support 24, and the electrodes 21 are installed on the cavity wall of the cavity body.

[0069] In an embodiment, referring to Figures 1-4 , the electric field generator 2 further comprises a bearing 23 located in the cavity body 1, and the bearing surface 22 is formed on the bearing 23.

[0070] In the embodiment of the present application, the semiconductor wafer 8 is supported by the bearing 23, the bearing 23 only plays a supporting role, and there is no electric field between the bearing 23 and the semiconductor wafer 8. The structure of the bearing 23 is not limited, which is convenient for adjusting the distance between the semiconductor wafer 8 and the electrode 21, only one corresponding electrode 21 is required for one semiconductor wafer 8, and the number of electrodes 21 is reduced.

[0071] It can be understood that the electric field generator 2 is not limited to setting the bearing 23. For example, referring to Figure 4, the electric field generator 2 is not provided with the carrier 23, the carrier surface 22 is formed on the electrode 21, and the semiconductor wafer 8 is supported by the electrode 21. The electrodes 21 are arranged in a column in sequence and in intervals in the up-down direction, the carrier surface 22 is formed on the upper side of the electrode 21, the electrode 21 does not need to be provided with the avoiding hole 233, and the semiconductor wafer 8 on the carrier surface 22 forms an electric field with the corresponding electrode 21 above to make the nanowires deposited and grown on the upper surface of the semiconductor wafer 8.

[0072] Exemplarily, the semiconductor wafer 8 is upward.

[0073] Exemplarily, the electrode 21 is an electrode plate.

[0074] In an embodiment, referring to Figure 1 and Figure 2 , the carrier 23 is movably mounted on the electrode 21.

[0075] In the embodiment of the application, the semiconductor wafer 8 is placed on the carrier surface 22, the carrier 23 is movably mounted on the electrode 21, the distance between the carrier surface 22 and the electrode 21 can be adjusted, the distance between the semiconductor wafer 8 and the electrode 21 can be adjusted, and thus the electric field between the semiconductor wafer 8 and the electrode 21 can be adjusted to obtain nanowires of different sizes. The carrier 23 is moved according to actual needs to obtain nanowires of a required size, and the chemical vapor deposition chamber is convenient to use. The distance between the carrier surface 22 and the electrode 21 is increased to realize the preparation of nanowires of a large size.

[0076] It can be understood that the carrier 23 is not limited to being movably mounted on the electrode 21. Exemplarily, the carrier 23 is fixedly mounted on the electrode 21.

[0077] In an embodiment, referring to Figure 1 and Figure 2 , the carrier 23 includes a carrier body 231 and a moving column 232, the carrier surface 22 is formed on the carrier body 231, the carrier body 231 is arranged in intervals with the electrode 21, the moving column 232 is connected with the carrier body 231, the moving column 232 is movably mounted on the electrode 21, the moving column 232 can move relative to the electrode 21 along the arrangement direction of the carrier surface 22 and the electrode 21, and the moving column 232 and / or the carrier body 231 are / is insulated from the electrode 21 to insulate the carrier surface 22 from the electrode 21.

[0078] Exemplarily, the moving column 232 is an insulating ceramic column.

[0079] In the embodiment, the moving column 232 moves along the arrangement direction of the bearing surface 22 and the electrodes 21 to drive the bearing body 231 to move, so that the bearing body 231 drives the semiconductor wafer 8 to move, and the semiconductor wafer 8 is spaced apart from the electrodes 21 by a proper distance, thereby generating proper nanowires. The moving column 232 does not affect the semiconductor wafer 8 on the bearing body 231 during the moving process. The moving column 232 is located on the side of the bearing body 231 facing the electrodes 21, and the bearing surface 22 is located on the side of the bearing body 231 away from the electrodes 21. The side where the bearing surface 22 is located is basically open, facilitating the placement of the semiconductor wafer 8 on the bearing surface 22.

[0080] It can be understood that the moving column 232 is not limited to moving relative to the electrodes 21 along the arrangement direction of the bearing surface 22 and the electrodes 21. For example, the moving column 232 can be rotatable, and the bearing body 231 is in screw transmission connection with the moving column 232, so that the bearing body 231 is driven to move through the screw pair transmission.

[0081] In an embodiment, referring to Figure 1 and Figure 2 , the bearing body 231 is annular, and the bearing surface 22 is located on the side of the bearing body 231 away from the electrodes 21.

[0082] For example, the bearing body 231 is annular for bearing the edge of the semiconductor wafer 8.

[0083] In the embodiment, the annular bearing body 231 supports the semiconductor wafer 8, so that the semiconductor wafer 8 leaks out from the gap in the middle of the bearing body 231 to face the electrodes 21, so as to grow nanowires on the semiconductor wafer 8.

[0084] It can be understood that the bearing body 231 is not limited to be annular. For example, the bearing body 231 is in a mesh structure, and the semiconductor wafer 8 grows nanowires at the mesh of the bearing body 231.

[0085] In an embodiment, referring to Figure 3 , the carrier 23 is connected with the showerhead 3, and the carrier 23 is located on the side of the showerhead 3 facing the electrodes 21.

[0086] For example, the carrier 23 is annular.

[0087] For example, the carrier 23 is detachably connected with the showerhead 3.

[0088] For example, the carrier 23 can be non-detachably connected with the showerhead 3. One side of the carrier 23 has a gap for the semiconductor wafer 8 to move in or out.

[0089] It can be understood that the front surface of the semiconductor wafer faces the electrodes 21, and the back surface of the semiconductor wafer faces the showerhead 3.

[0090] In the embodiments of the present application, the carrier 23 is connected with the showerhead 3, and the semiconductor wafer 8 is partially located in the space surrounded by the carrier 23 and the showerhead 3. The space surrounded by the carrier 23 and the showerhead 3 is separated from other spaces in the chamber to some extent. The carrier 23 can shield the reaction gas, reduce the reaction gas entering the space surrounded by the carrier 23 and the showerhead 3, reduce the contact area between the semiconductor wafer 8 and the reaction gas, and reduce the nanowires generated by the reaction of the reaction gas on the back surface of the semiconductor wafer 8.

[0091] It can be understood that the carrier 23 is not limited to being connected with the showerhead 3. For example, the carrier 23 is connected with the chamber body 1.

[0092] In an embodiment, referring to Figure 3 The chemical vapor deposition chamber further includes a driving device 6, and the electrode 21 is installed on the driving device 6 so that the driving device 6 can drive the electrode 21 to move to make the electrode 21 and the carrier 23 approach or move away from each other.

[0093] In the embodiments of the present application, the electrode 21 is moved by the driving device 6 to adjust the distance between the electrode 21 and the semiconductor wafer 8, so as to adjust the electric field between the semiconductor wafer 8 and the electrode 21, so as to grow nanowires of a suitable size.

[0094] It can be understood that the driving device 6 is not limited to driving the electrode 21 to move. For example, the driving device 6 drives the carrier 23 to move to make the carrier 23 and the electrode 21 approach or move away from each other.

[0095] In an embodiment, referring to Figure 3 The carrier 23 has a relief hole 233, and the relief hole 233 is connected with the side of the carrier 23 facing the electrode 21 and the side of the carrier 23 away from the electrode 21.

[0096] For example, the electrode 21 is located below the semiconductor wafer 8, the showerhead 3 is located above the semiconductor wafer 8, and the carrier 23 is located between the electrode 21 and the showerhead 3. The semiconductor wafer 8 needs to be exposed through the relief hole 233 on the carrier 23 to grow nanowires on the side of the semiconductor wafer 8 facing the electrode 21.

[0097] In the embodiments of the present application, the relief hole 233 makes the front surface of the semiconductor wafer 8 not be completely shielded by the carrier 23, and the front surface of the semiconductor wafer 8 can leak out from the relief hole 233 to grow nanowires on the front surface of the side of the semiconductor wafer 8 facing the electrode 21.

[0098] It can be understood that the bearing surface 22 is not limited to being located on the side of the carrier 23 facing away from the electrode 21. Exemplarily, the showerhead 3 is located below the carrier 23, the electrode 21 is located above the carrier 23, and the bearing surface 22 is located on the side of the carrier 23 facing the electrode 21.

[0099] In an embodiment, referring to Figure 3 and 7 , the carrier 23 further has a gas permeable hole 234 communicating the side of the carrier 23 facing the electrode 21 and the side of the carrier 23 facing away from the electrode 21.

[0100] In the embodiment of the present application, the gas permeable hole 234 communicates the side of the carrier 23 facing the electrode 21 and the side of the carrier 23 facing away from the electrode 21, and the airflow can pass through the gas permeable hole 234 between the side of the carrier 23 facing the electrode 21 and the side of the carrier 23 facing away from the electrode 21, preventing the local pressure from being too large.

[0101] It can be understood that the gas permeable hole 234 is not limited to being provided on the carrier 23. Exemplarily, the avoidance hole 233 communicates the side of the carrier 23 facing the electrode 21 and the side of the carrier 23 facing away from the electrode 21, and the avoidance hole 233 can also be gas permeable.

[0102] In an embodiment, referring to Figures 1-4 , the electrode 21 is in the shape of a plate.

[0103] In the embodiment of the present application, the electrode 21 is in the shape of a plate, facilitating the electric field formed between the semiconductor wafer 8 and the electrode 21 to be more uniformly distributed, and facilitating the nanowires to be grown in a large area on the front surface of the entire semiconductor wafer 8, so that the nanowires are uniformly grown on the front surface of the semiconductor wafer 8.

[0104] It can be understood that the shape of the electrode 21 is not limited to being in the shape of a plate. Exemplarily, the electrode 21 is in the shape of a ring.

[0105] In an embodiment, referring to Figures 1-3 , the electrode 21 is a charged heater for heating the chamber body 1.

[0106] In the embodiment of the present application, heating the chamber body 1 by providing a heater can accelerate the chemical reaction rate in the chamber body 1 and speed up the growth of nanowires. The heater is integrated into the electrode 21 to heat the chamber body 1, and no additional structure connected with the heater needs to be provided in the chamber body 1, thereby saving the space in the chamber body 1 and improving the space utilization rate in the chamber body 1.

[0107] It can be understood that the electrode 21 is not limited to being a charged heater. Exemplarily, the electrode 21 does not generate heat, and a heater is provided on the showerhead 3.

[0108] Exemplarily, the chemical vapor deposition chamber can not be provided with a heater.

[0109] In an embodiment, referring to Figure 1 , Figure 3 and Figure 4 , the chemical vapor deposition chamber further comprises a gas supply device 5 having a gas outlet 51 for outputting a reaction gas for chemical vapor deposition to the chamber body 1.

[0110] In the embodiment, the gas outlet 51 of the gas supply device 5 outputs the reaction gas, the showerhead 3 sprays the preset gas which does not affect the reaction gas, and the position of the gas outlet 51 is not limited by the showerhead 3, so that the gas outlet 51 of the gas supply device 5 can be flexibly arranged.

[0111] It can be understood that the chemical vapor deposition chamber is not limited to comprising the gas supply device 5. Exemplarily, the showerhead 3 can spray the preset gas, and the showerhead 3 can spray the reaction gas for chemical vapor deposition.

[0112] In an embodiment, referring to Figure 1 , Figure 3 and Figure 4 , the gas outlet 51 is located between the bearing surface 22 and the electrode 21 along the arrangement direction of the bearing surface 22 and the electrode 21.

[0113] In the embodiment, the gas outlet 51 is located between the bearing surface 22 and the electrode 21 along the arrangement direction of the bearing surface 22 and the electrode 21, the gas outlet 51 is close to the front surface of the semiconductor wafer 8, so that the front surface of the semiconductor wafer 8 is more easily contacted with the reaction gas, and the reaction gas sprayed by the gas outlet 51 is facilitated to deposit nanowires on the semiconductor wafer 8 through chemical reaction.

[0114] Exemplarily, the nanowires are facilitated to be deposited on the front surface of the semiconductor wafer 8.

[0115] It can be understood that the gas outlet 51 is not limited to being located between the bearing surface 22 and the electrode 21 along the arrangement direction of the bearing surface 22 and the electrode 21. Exemplarily, the gas outlet 51 is located below the electrode 21.

[0116] In an embodiment, referring to Figure 1 and Figure 3 , the arrangement direction of the gas supply device 5 and the electrode 21 intersects with the arrangement direction of the bearing surface 22 and the electrode 21.

[0117] Exemplarily, the arrangement direction of the gas supply device 5 and the electrode 21 perpendicularly intersects with the arrangement direction of the bearing surface 22 and the electrode 21.

[0118] In the embodiment of the present application, the arrangement direction of the gas supply device 5 and the electrode 21 intersects with the arrangement direction of the supporting surface 22 and the electrode 21, the gas supply device 5 is not arranged directly opposite to the electrode 21 and the supporting surface 22 along the arrangement direction of the supporting surface 22 and the electrode 21, and the gas supply device 5 is arranged on one side of the supporting surface 22, so that the gas supply device 5 will not limit the supporting surface 22 and the electrode 21.

[0119] In one embodiment, referring to Figures 1-3 , the nozzle 3 is located on the side of the supporting surface 22 away from the electrode 21 along the arrangement direction of the supporting surface 22 and the electrode 21.

[0120] In the embodiment of the present application, the nozzle 3 is located on the side of the supporting surface 22 away from the electrode 21 along the arrangement direction of the supporting surface 22 and the electrode 21, the nozzle 3 sprays the preset gas towards the back surface of the semiconductor wafer 8, the gas flow sprayed by the nozzle 3 can blow away the reaction gas at the back surface of the semiconductor wafer 8, reduces the reaction gas at the back surface of the semiconductor wafer 8, and thus inhibits the growth of nanowires at the back surface of the semiconductor wafer 8.

[0121] It can be understood that the nozzle 3 is not limited to being located on the side of the supporting surface 22 away from the electrode 21 along the arrangement direction of the supporting surface 22 and the electrode 21. For example, the nozzle 3 is located on the side of the electrode 21 along the direction intersecting with the arrangement direction of the supporting surface 22 and the electrode 21.

[0122] In one embodiment, referring to Figures 1-4 , the electrode 21 and the supporting surface 22 are arranged along the up-down direction.

[0123] In the embodiment of the present application, the electrode 21 and the supporting surface 22 are arranged along the up-down direction, the semiconductor wafer 8 is placed on the supporting surface 22, the gravity of the semiconductor wafer 8 can make the semiconductor wafer 8 stable, and the supporting surface 22 does not need to be additionally provided with a fixing structure to fix the semiconductor wafer 8, so that the supporting surface 22 is convenient to carry the semiconductor wafer 8.

[0124] It can be understood that the electrode 21 and the supporting surface 22 are not limited to being arranged along the up-down direction. For example, the electrode 21 and the supporting surface 22 are arranged along the direction intersecting with the up-down direction.

[0125] In one embodiment, referring to Figures 1-3 , the electrode 21 is a charged heater for heating the chamber body 1, the nozzle 3, the carrier 23 and the electrode 21 are arranged along the up-down direction in sequence, and the nozzle 3 is located above the electrode 21.

[0126] In the embodiment of the present application, the nozzle 3 is above the electrode 21, the carrier 23 is above the electrode 21, the front surface of the semiconductor wafer 8 faces downwards, the carrier 23 is below the nozzle 3, and the heater is below, so that the heater heats the air in the chamber body 1, the heated air floats upwards, and the whole chamber body 1 is convenient to be heated.

[0127] It can be understood that the showerhead 3 is not limited to be located above the electrode 21. Exemplarily, the electrode 21 is located above the carrier 23, and the semiconductor wafer 8 is front-up.

[0128] The production system provided in the embodiments of the present application comprises a chemical vapor deposition chamber.

[0129] In an embodiment, the production system further comprises a flipping assembly 9 and conveying devices, the flipping assembly 9 comprises a carrier table 91 and a flipping device 92, the carrier table 91 is used to place the semiconductor wafer 8 before being moved into the chemical vapor deposition chamber or after being moved out of the chemical vapor deposition chamber, the flipping device 92 is used to flip the semiconductor wafer 8 on the carrier table 91, and the conveying devices are used to convey the semiconductor wafer 8, and each conveying device corresponds to at least one chemical vapor deposition chamber.

[0130] It can be understood that the production system is used to process and produce a plurality of semiconductor wafers 8.

[0131] Exemplarily, the conveying devices can not only convey the semiconductor wafers 8, but also buffer the semiconductor wafers 8 on the conveying devices.

[0132] Exemplarily, the production system comprises at least two chemical vapor deposition chambers and one conveying device, and the conveying device conveys the semiconductor wafers 8 to the respective chemical vapor deposition chambers.

[0133] In the embodiments of the present application, the front surface of the semiconductor wafer 8 can be different when being inside the chemical vapor deposition chamber and when being outside the chemical vapor deposition chamber, and the flipping assembly 9 is arranged on the production system to facilitate the production system to automatically adjust the front surface of the semiconductor wafer 8 to the required orientation. When the semiconductor wafer 8 is outside the chemical vapor deposition chamber, the front surface of the semiconductor wafer 8 is upward, when the semiconductor wafer 8 needs to be front-down to grow nanowires inside the chemical vapor deposition chamber, the flipping device 92 flips the semiconductor wafer 8 from front-up to front-down before the semiconductor wafer 8 is moved into the chemical vapor deposition chamber to grow nanowires, and when the semiconductor wafer 8 finishes growing nanowires inside the chemical vapor deposition chamber, the flipping device 92 flips the semiconductor wafer 8 from front-down to front-up, and the conveying device can convey the semiconductor wafer 8 to at least one chemical vapor deposition chamber or the flipping assembly 9 for processing. The flipping assembly 9 and the conveying devices enable the semiconductor wafer 8 to grow nanowires front-down, and the orientation of the semiconductor wafer 8 does not need to be manually adjusted, which is conducive to realizing production automation.

[0134] It is understood that the production system is not limited to the setting of the flipping assembly 9. Exemplarily, the production system is not provided with the flipping assembly 9, and the electrodes 21 in the chemical vapor deposition chamber are located above the bearing surface 22, and the front surface of the semiconductor wafer 8 is always upward.

[0135] In one embodiment, referring to Figs. 1 and 2, the flipping device 92 includes a clamping ring 921 and a needle clamp 922. The clamping ring 921 is used to place the semiconductor wafer 8, and the needle clamp 922 is provided on the clamping ring 921. The needle clamp 922 can clamp the semiconductor wafer 8 and the clamping ring 921. Figure 5 Figure 6 In one embodiment, referring to Figs. 1 and 2, the flipping device 92 includes a clamping ring 921 and a needle clamp 922. The clamping ring 921 is used to place the semiconductor wafer 8, and the needle clamp 922 is provided on the clamping ring 921. The needle clamp 922 can clamp the semiconductor wafer 8 and the clamping ring 921.

[0136] In one embodiment, referring to Figs. 1 and 2, the flipping device 92 includes a clamping ring 921 and a needle clamp 922. The clamping ring 921 is used to place the semiconductor wafer 8, and the needle clamp 922 is provided on the clamping ring 921. The needle clamp 922 can clamp the semiconductor wafer 8 and the clamping ring 921.

[0137] In one embodiment, referring to Figs. 1 and 2, the flipping device 92 includes a clamping ring 921 and a needle clamp 922. The clamping ring 921 is used to place the semiconductor wafer 8, and the needle clamp 922 is provided on the clamping ring 921. The needle clamp 922 can clamp the semiconductor wafer 8 and the clamping ring 921.

[0138] ​In one embodiment, the production system further comprises a transfer device. The work flow of the semiconductor wafer 8 on the production system is as follows: the semiconductor wafer 8 with the front side facing upward is transported from the transfer device to the conveying device, the conveying device transports the semiconductor wafer 8 with the front side facing upward to the flipping assembly 9, the flipping assembly 9 flips the semiconductor wafer 8 with the front side facing upward to the semiconductor wafer 8 with the front side facing downward, the semiconductor wafer 8 with the front side facing downward grows nanowires in the chemical vapor deposition chamber, after the semiconductor wafer 8 grows nanowires, the flipping assembly 9 flips the semiconductor wafer 8 with the front side facing downward to the semiconductor wafer 8 with the front side facing upward, the conveying device transports the semiconductor wafer 8 with the front side facing upward from the chemical vapor deposition chamber, and the semiconductor wafer 8 with the front side facing upward is transported to the transfer device. One conveying device can transport the semiconductor wafer 8 to at least two flipping assemblies 9 respectively.

[0139] In one embodiment, the chemical vapor deposition chamber further comprises a waste gas collection device 7, and the waste gas collection device 7 is used to collect the waste gas generated in the chemical vapor deposition chamber when the nanowires are grown.

[0140] In the description of the present application, the description of the terms "one embodiment", "some embodiments", "an example", "a specific example", or "some examples" means that the specific features, structures, materials or characteristics described in connection with the embodiment or example are included in at least one embodiment or example of the present application. In the present application, the illustrative description of the above terms is not necessarily directed to the same embodiment or example. Moreover, the specific features, structures, materials or characteristics described can be combined in any suitable manner in any one or more embodiments or examples. In addition, the different embodiments or examples described in the present application and the features of the different embodiments or examples can be combined by those skilled in the art without contradiction.

[0141] The above only describes the preferred embodiments of the present application and is not intended to limit the present application. Those skilled in the art can make various changes and modifications to the present application. Any modification, equivalent replacement, improvement, etc. made within the spirit and principles of the present application shall be included in the protection scope of the present application.

Claims

1. A chemical vapor deposition chamber, comprising: The chemical vapor deposition chamber comprises: a chamber body; an electric field generator comprising at least one electrode and a bearing surface, the electric field generator being located in the chamber body, the bearing surface being arranged in spaced-apart relation to the electrode, the bearing surface being insulated from the electrode; a showerhead located in the chamber body; a plasma generator located in the chamber body.

2. The chemical vapor deposition chamber of claim 1, wherein, The electric field generator further comprises a carrier located in the chamber body, the bearing surface being formed on the carrier.

3. The chemical vapor deposition chamber of claim 2, wherein, The carrier is movably mounted on the electrode.

4. The chemical vapor deposition chamber of claim 3, wherein, The carrier comprises: a carrier body, the bearing surface being formed on the carrier body, the carrier body being arranged in spaced-apart relation to the electrode; a moving column connected to the carrier body, the moving column being movably mounted on the electrode, the moving column being movable relative to the electrode along the arrangement direction of the bearing surface and the electrode; wherein the moving column and / or the carrier body are insulated from the electrode so that the bearing surface is insulated from the electrode.

5. The chemical vapor deposition chamber of claim 4, wherein, The carrier body is annular, the bearing surface being located on the side of the carrier body facing away from the electrode.

6. The chemical vapor deposition chamber of claim 2, wherein, The carrier is connected to the showerhead, the carrier being located on the side of the showerhead facing the electrode.

7. The chemical vapor deposition chamber of claim 6, wherein, The chemical vapor deposition chamber further comprises a driving device, the electrode being mounted on the driving device so that the driving device can drive the electrode to move so as to move the electrode and the carrier closer to or farther away from each other.

8. The chemical vapor deposition chamber of claim 2, wherein, The bearing surface is located on the side of the carrier facing away from the electrode, the carrier having an avoiding hole, the avoiding hole being in communication with the side of the carrier facing the electrode and the side of the carrier facing away from the electrode.

9. The chemical vapor deposition chamber of claim 2, wherein, The carrier further has a gas permeable hole, the gas permeable hole being in communication with the side of the carrier facing the electrode and the side of the carrier facing away from the electrode.

10. The chemical vapor deposition chamber of any of claims 1 to 9, wherein, The electrode is in the shape of a plate.

11. The chemical vapor deposition chamber of any of claims 1 to 9, wherein, The electrode is a charged heater for heating the chamber body.

12. The chemical vapor deposition chamber of any of claims 1 to 9, wherein, The chemical vapor deposition chamber further comprises a gas supply device, the gas supply device having a gas outlet for outputting reaction gas for chemical vapor deposition to the chamber body.

13. The chemical vapor deposition chamber of claim 12, wherein, The gas outlet is located between the bearing surface and the electrode along the arrangement direction of the bearing surface and the electrode.

14. The chemical vapor deposition chamber of claim 12, wherein, The arrangement direction of the gas supply device and the electrode intersects the arrangement direction of the bearing surface and the electrode.

15. The chemical vapor deposition chamber of any of claims 1 to 9, wherein, The showerhead is located on the side of the bearing surface facing away from the electrode along the arrangement direction of the bearing surface and the electrode.

16. The chemical vapor deposition chamber of claim 15, wherein, The electrode and the bearing surface are arranged in an up-down direction.

17. The chemical vapor deposition chamber of claim 16, wherein, The electrode is a charged heater for heating the chamber body, the showerhead, the carrier and the electrode being arranged in the up-down direction in sequence, the showerhead being located above the electrode.

18. A production system characterized by, The production system comprises the chemical vapor deposition chamber according to any one of claims 1-17.

19. The production system of claim 18, wherein, The production system further comprises: a turnover assembly comprising a carrying table and a turnover device, the carrying table being used for placing a semiconductor wafer before being moved into the chemical vapor deposition chamber or after being moved out of the chemical vapor deposition chamber, the turnover device being used for turning over the semiconductor wafer on the carrying table; Transportation devices for transporting the semiconductor wafers, each of the transportation devices corresponding to at least one of the chemical vapor deposition chambers.

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