Large-frequency-difference low-insertion-loss ceramic dielectric duplexer with special-shaped structure
By designing an irregular structure and inductive-capacitive coupling in a ceramic dielectric duplexer, the design challenge of low insertion loss under large frequency differences is solved, achieving the effect of meeting frequency difference requirements and reducing insertion loss, which is suitable for microwave communication systems.
Patent Information
- Application Number
- CN202423080339.5
- Authority / Receiving Office
- CN · China
- Patent Type
- Utility models(China)
- Current Assignee / Owner
- Filing Date
- 2024-12-13
- Publication Date
- 2025-11-11
- Estimated Expiration
- 2034-12-13
AI Technical Summary
Existing ceramic dielectric duplexers are difficult to meet the design requirements of low insertion loss under large frequency difference requirements, especially in the range of 20MHz-150MHz, where the design is quite difficult.
A ceramic dielectric duplexer with an irregular structure is designed. Two main body sections of different heights are set on the ceramic dielectric body, and a stepped structure and through hole group are formed on its surface. Combined with metallization treatment and inductive and capacitive coupling, the frequency difference is adjusted to meet the high frequency requirements, and the inductive coupling is enhanced by grooves to reduce insertion loss.
It achieves the frequency difference between low-end and high-end frequency bands to meet the needs of large frequencies, increases bandwidth, reduces insertion loss, adapts to diversified designs, and improves performance.
Smart Images
Figure CN223539866U_ABST
Abstract
Description
Technical Field
[0001] This utility model relates to the field of filters, specifically to a ceramic dielectric duplexer with a large frequency difference and low insertion loss and an irregular structure. Background Technology
[0002] Dielectric filters are constructed through coupling between dielectric resonators. Dielectric resonator filters have high Q values and low insertion loss. There are many types of communication filters, each with different frequency ranges and application scenarios. Ceramic dielectric duplexers are mainly used in microwave communication systems to achieve bidirectional communication by combining and separating transmitted and received signals.
[0003] In recent years, with the rapid development of microwave communication systems, communication manufacturers have placed higher performance and size requirements on filter manufacturers, especially regarding the diverse and convenient frequency difference between the transmitting and receiving ends, as well as low insertion loss. Currently, the required frequency difference range is mostly between 20MHz and 150MHz. If a larger frequency difference is required, such as 190MHz, existing designs are difficult to meet or the design is quite challenging. Utility Model Content
[0004] In view of the background technology, the purpose of this utility model is to provide a ceramic dielectric duplexer with a large frequency difference and low insertion loss of irregular structure to improve the above-mentioned problems.
[0005] A non-standard, high-frequency-difference, low-insertion-loss ceramic dielectric duplexer includes:
[0006] The irregularly shaped ceramic medium body includes a first main body and a second main body. The first main body and the second main body each have an open surface and a short surface that are arranged opposite to each other. The first main body and the second main body are flush on one of the open surfaces or the short surface, and form a stepped structure on the other side. The first main body is higher than the second main body.
[0007] A first through-hole group is provided in the first main body and penetrates the first main body along the direction of the open surface and the short road surface;
[0008] The second through-hole group is provided in the first main body and penetrates the second main body along the direction of the open surface and the short road surface;
[0009] A groove is provided on the other side of the first main body forming a stepped structure; the opening of the first through hole group on the other side is located in the groove.
[0010] Preferably, the open surfaces of the first main body and the second main body are flush, forming the stepped structure on the short road surface.
[0011] Preferably, both the first and second through-hole groups have three through-holes, forming six through-holes arranged side-by-side with their central axes parallel to each other.
[0012] Preferably, it further includes side surfaces disposed on the periphery of the open surface and the short surface; the interior of the through hole and the side surfaces are metallized to form a metal covering layer; each through hole forms a corresponding metal loading layer with a specific shape on the open surface;
[0013] A high-end port electrode is formed at one end of the side surface adjacent to the open surface of the first main body. The high-end port electrode is connected to the metal loading layer of the adjacent through hole, thereby forming a capacitive coupling electrode with the adjacent through hole.
[0014] A low-end port electrode is formed at one end of the side surface adjacent to the open surface of the second main body. The low-end port electrode is connected to the metal loading layer of the adjacent through hole, thereby forming a capacitive coupling electrode with the adjacent through hole.
[0015] A common port electrode is formed at a position adjacent to the first main body and the second main body. The common port electrode is connected to the metal loading layer of the adjacent through hole, thereby forming a capacitive coupling electrode with the two adjacent through holes.
[0016] Preferably, the metal coating is a silver layer applied to the ceramic substrate by a silver immersion metallization process.
[0017] Preferably, the metal loading layer is formed by laser engraving the metal cover layer.
[0018] Preferably, the height difference of the stepped structure ranges from 0.5mm to 5mm.
[0019] Preferably, inductive coupling is formed between the metal loading layers of the through holes in the first through hole group.
[0020] Preferably, the depth of the groove is in the range of 0.5-3mm and the width is in the range of 1.7-3mm.
[0021] Preferably, capacitive coupling is formed between the metal loading layers of the through holes in the second through hole group.
[0022] The large frequency difference and low insertion loss ceramic dielectric duplexer with irregular structure proposed in this invention has the following advantages:
[0023] 1. By setting two main body sections of different heights on the ceramic dielectric body, the frequency difference between the low-end and high-end frequency bands can be easily adjusted by adjusting the height difference between the two main body sections, so as to meet the large frequency difference requirements of the low-end and high-end frequency bands of the duplexer and facilitate diversified design.
[0024] 2. By creating a groove on one side of the ceramic body in the low-frequency band, inductive coupling is enhanced to create a larger bandwidth and lower insertion loss. Attached Figure Description
[0025] Figure 1 This is a first axonometric view of a non-standard structure, large frequency difference, low insertion loss ceramic dielectric duplexer provided in this embodiment of the present invention;
[0026] Figure 2 This is a second axonometric view of a non-standard, high-frequency-difference, low-insertion-loss ceramic dielectric duplexer provided in this embodiment of the present invention;
[0027] Figure 3 This is an actual test waveform diagram of a non-standard structure, large frequency difference, low insertion loss ceramic dielectric duplexer provided in this embodiment of the present invention;
[0028] The markings in the attached figures are as follows: First main body 1, First open surface 11, First short surface 12, First through hole 13, Groove 14, Second main body 2, Second open surface 21, Second short surface 22, Second through hole 23, Metal cover layer 3, Metal loading layer 4, High-end port electrode 5, Low-end port electrode 6, Common port electrode 7, Inductor wire 8, Capacitive position 9. Detailed Implementation
[0029] To make the technical problem to be solved, the technical solution, and the beneficial effects of this utility model clearer and more understandable, the present utility model will be further described in detail below with reference to the accompanying drawings and embodiments. It should be understood that the specific embodiments described herein are only used to explain this utility model and are not intended to limit this utility model.
[0030] Please see Figure 1 and Figure 2 This utility model provides a large frequency difference and low insertion loss ceramic dielectric duplexer with an irregular structure. The main body of the irregular ceramic dielectric is roughly in the shape of an irregular cuboid. It can be made by pressing powder into shape with a press and then sintering it into ceramic at high temperature.
[0031] Specifically, the ceramic medium body includes a first main body 1 and a second main body 2, both of which have open surfaces and short surfaces arranged opposite to each other. One side of the open surface or the short surface of the first main body 1 and the second main body 2 is flush with each other, while the other side forms a stepped structure; and the first main body 1 is higher than the second main body 2.
[0032] For example, the first main body 1 has a first open surface 11 and a first short surface 12 disposed opposite to each other, and the second main body 2 has a second open surface 21 and a second short surface 22 disposed opposite to each other. The first open surface 11 and the second open surface 12 are flush, and the first short surface 12 and the second short surface 22 have a height difference to form a stepped structure. Specifically, the height difference of the stepped structure ranges from 0.5 mm to 5 mm.
[0033] Of course, in other embodiments of this utility model, the open surface may form a stepped structure while the short road surface is flush with the surface; these solutions are also within the protection scope of this utility model. For ease of explanation, the following description uses an example of an open surface with a flush surface and a stepped structure for the short road surface, but this should not be construed as a limitation of this utility model.
[0034] In this embodiment, it also includes:
[0035] The first through hole group is provided in the first main body 1 and penetrates the first main body 1 along the direction of the open surface and the short road surface.
[0036] The second through hole group is provided in the second main body 2 and penetrates the second main body 2 along the direction of the open surface and the short road surface;
[0037] Specifically, the first through-hole group includes three first through-holes 13, and the second through-hole group includes three second through-holes 23, thus forming six through-holes arranged side by side with their central axes parallel to each other.
[0038] A groove 14 is provided on the other side of the first main body 1 that forms a stepped structure; the opening of the first through hole group on the other side is located in the groove 14.
[0039] Specifically, the groove 14 is disposed on the first short surface 12, with a depth ranging from 0.5-3 mm and a width ranging from 1.7-3 mm, thereby accommodating all the openings of the first through-hole group on the first short surface 12 within the groove. Preferably, the depth is 0.8 mm and the width is 1.8 mm.
[0040] In this embodiment, specifically, it also includes side surfaces disposed on the periphery of the open surface and the short surface; the interior of the through-hole and the side surfaces are metallized to form a metal cover layer 3; each through-hole forms a corresponding metal loading layer 4 with a specific shape on the open surface. The metal cover layer 3 is a silver layer applied to the ceramic substrate using an immersion silver metallization process, while the metal loading layer 4 is formed by laser engraving the metal cover layer 3, and its thickness is preferably 10 μm.
[0041] In this embodiment, a high-end port electrode 5 is further formed at the end of the first open surface 11 of the side and the first main body 1. The high-end port electrode 5 is connected to the metal loading layer 4 of the adjacent through hole 13, thereby forming a capacitive coupling electrode with the adjacent through hole 13.
[0042] A low-end port electrode 6 is formed at one end of the second open surface 21 of the side and the second main body 2. The low-end port electrode 6 is connected to the metal loading layer 4 of the adjacent through hole 23, thereby forming a capacitive coupling electrode with the adjacent through hole 23.
[0043] A common port electrode 7 is formed at a position adjacent to the first main body portion 1 and the second main body portion 2. The common port electrode 7 is connected to the metal loading layer 4 of its adjacent through-hole, thereby forming a capacitive coupling electrode with the two adjacent through-holes. Here, one through-hole belongs to the first through-hole group, and the other belongs to the second through-hole group.
[0044] In this embodiment, the three first through holes 13 of the first through hole group are inductively coupled using inductor lines 8, and the groove 14 enhances the inductive coupling, thereby widening the filter bandwidth. The three second through holes 23 of the second through hole group are capacitively coupled using capacitor positions 9.
[0045] like Figure 3 The diagram shown is an actual test waveform of this utility model embodiment. The center frequency of the low-end frequency band is 1995MHz, and the minimum center insertion loss is 0.6dB; the center frequency of the high-end frequency band is 2185MHz, and the minimum center insertion loss is 0.8dB; the frequency difference between the low-end and high-end frequency bands is 190MHz, and the isolation is greater than 30dB.
[0046] In summary, the irregularly shaped, high-frequency-difference, low-insertion-loss ceramic dielectric duplexer proposed in this embodiment of the invention has the following advantages:
[0047] 1. By setting two main body sections of different heights on the ceramic dielectric body, the frequency difference between the low-end and high-end frequency bands can be easily adjusted by adjusting the height difference between the two main body sections, so as to meet the large frequency difference requirements of the low-end and high-end frequency bands of the duplexer and facilitate diversified design.
[0048] 2. By creating a groove on one side of the ceramic body in the low-frequency band, inductive coupling is enhanced to create a larger bandwidth and lower insertion loss.
[0049] The above embodiments are only used to illustrate the technical solutions of this utility model, and are not intended to limit it. Although this utility model has been described in detail with reference to the foregoing embodiments, those skilled in the art should understand that modifications can still be made to the technical solutions described in the foregoing embodiments, or equivalent substitutions can be made to some of the technical features. Such modifications or substitutions do not cause the essence of the corresponding technical solutions to deviate from the spirit and scope of the technical solutions of the embodiments of this utility model.
Claims
1. A ceramic dielectric duplexer with a non-standard structure, characterized in that, include: The irregularly shaped ceramic medium body includes a first main body and a second main body. The first main body and the second main body each have an open surface and a short surface that are arranged opposite to each other. The first main body and the second main body are flush on one of the open surfaces or the short surface, and form a stepped structure on the other side. The first main body is higher than the second main body. A first through-hole group is provided in the first main body and penetrates the first main body along the direction of the open surface and the short road surface; The second through-hole group is provided in the second main body and penetrates the second main body along the direction of the open surface and the short road surface; A groove is provided on the other side of the first main body forming a stepped structure; the opening of the first through hole group on the other side is located in the groove.
2. The irregularly shaped, high-frequency-difference, low-insertion-loss ceramic dielectric duplexer according to claim 1, characterized in that, The open surfaces of the first main body and the second main body are flush, forming the stepped structure on the short road surface.
3. The irregularly shaped, large-frequency-difference, low-insertion-loss ceramic dielectric duplexer according to claim 1, characterized in that, The first and second through-hole groups each have 3 through holes, forming 6 through holes arranged side by side with their central axes parallel to each other.
4. The irregularly shaped, large-frequency-difference, low-insertion-loss ceramic dielectric duplexer according to claim 2, characterized in that, It also includes the side surfaces provided around the open surface and the short surface; the interior of the through holes and the side surfaces are metallized to form a metal covering layer; each through hole forms a corresponding metal loading layer with a specific shape on the open surface; A high-end port electrode is formed at one end of the side surface adjacent to the open surface of the first main body. The high-end port electrode is connected to the metal loading layer of the adjacent through hole, thereby forming a capacitive coupling electrode with the adjacent through hole. A low-end port electrode is formed at one end of the side surface adjacent to the open surface of the second main body. The low-end port electrode is connected to the metal loading layer of the adjacent through hole, thereby forming a capacitive coupling electrode with the adjacent through hole. A common port electrode is formed at a position adjacent to the first main body and the second main body. The common port electrode is connected to the metal loading layer of the adjacent through hole, thereby forming a capacitive coupling electrode with the two adjacent through holes.
5. The irregularly shaped, large-frequency-difference, low-insertion-loss ceramic dielectric duplexer according to claim 4, characterized in that: The metal coating is a silver layer applied to the ceramic substrate through a silver immersion metallization process.
6. The irregularly shaped, large-frequency-difference, low-insertion-loss ceramic dielectric duplexer according to claim 5, characterized in that: The metal loading layer is formed by laser engraving the metal cover layer.
7. The irregularly shaped, large-frequency-difference, low-insertion-loss ceramic dielectric duplexer according to claim 1, characterized in that: The height difference of the stepped structure ranges from 0.5mm to 5mm.
8. A large frequency difference, low insertion loss ceramic dielectric duplexer with an irregular structure according to claim 4, characterized in that: Inductive coupling is formed between the metal loading layers of the through holes in the first through hole group.
9. A large frequency difference, low insertion loss ceramic dielectric duplexer with an irregular structure according to claim 1, characterized in that: The groove has a depth range of 0.5-3mm and a width range of 1.7-3mm.
10. A large frequency difference, low insertion loss ceramic dielectric duplexer with an irregular structure according to claim 4, characterized in that: Capacitive coupling is formed between the metal loading layers of the through holes in the second through hole group.