Air inlet device of atomic layer deposition equipment and atomic layer deposition equipment

Abstract

The utility model discloses an air inlet device of atomic layer deposition equipment and the atomic layer deposition equipment, the air inlet device of the atomic layer deposition equipment comprises a precursor air supply system and an air inlet purging system, and the precursor air supply system is connected with a reaction chamber of the atomic layer deposition equipment; the precursor gas supply system comprises N precursor gas supply branches; the gas inlet purging system comprises N paths of first purging branches, the first purging branches are connected with the precursor gas supply branches in a one-to-one correspondence manner, and the gas inlet purging system is used for providing purging gas for the reaction chamber; n is greater than or equal to 3 and is a natural number. The precursor gas supply branches can provide different precursors for the reaction chamber, so that the atomic layer deposition equipment comprising the gas inlet device can be used for preparing a film layer structure with a single material and a laminated film layer structure with multiple materials, and the utilization rate of the equipment can be improved; and the transmission time of the wafer between different processing devices is reduced, the processing efficiency is improved, and the probability that the wafer is polluted is reduced.

Description

TECHNICAL FIELD

[0001] The embodiment of the utility model relates to the field of semiconductor manufacturing, especially to an inlet device of atomic layer deposition equipment and atomic layer deposition equipment. BACKGROUND

[0002] With the rapid growth of semiconductor integrated circuit (IC) industry, semiconductor technology continues to move towards smaller process nodes under the driving of Moore's law, so that integrated circuits develop towards smaller size, higher circuit precision and higher circuit complexity.

[0003] In the process of manufacturing semiconductor structures, it usually includes the step of depositing a film layer on a wafer. With the continuous reduction of process nodes, some key film layers are almost only a few atoms thick, and one of the technologies for developing these microstructures is atomic layer deposition process (ALD).

[0004] Atomic layer deposition process is a layer-by-layer atomic growth that can achieve atomic-level precise control of film layer preparation technology. A reaction cycle generally includes two self-limiting reactions. The first step is to introduce the first precursor into the reaction chamber and adsorb on the surface of the wafer to reach saturation state, completing the first self-limiting reaction. The second step is to introduce a purge gas into the reaction chamber to purge the first precursor and by-products in the reaction chamber. The third step is to introduce the second precursor into the reaction chamber and make it react with the first precursor on the surface of the wafer in the reaction chamber to form an atomic-level film layer. The fourth step is to introduce a purge gas into the reaction chamber to purge the precursors and by-products in the reaction chamber, completing a reaction cycle. Atomic layer deposition process controls the film layer thickness by controlling the number of cycles.

[0005] Currently, the market mainly prepares single film layer with high efficiency, only completing a single process in chip production. It cannot make laminated film layers or multiple film layers in the same process chamber. Although the efficiency is high, it cannot realize the diversity of film plating of the equipment. And if different processes are made, the process needs to be completed between different process machines through a crown system, the process time is longer, the possibility of wafer contamination is increased, and the equipment procurement cost is higher. UTILITY MODEL CONTENT

[0006] The problem solved by the embodiment of the utility model is to provide an inlet device of atomic layer deposition equipment to improve the atomic layer deposition equipment.

[0007] To solve the above problems, the utility model embodiment provides a kind of gas inlet device of atomic layer deposition equipment, comprising: precursor gas supply system and gas inlet purge system, the precursor gas supply system is connected with the reaction chamber of the atomic layer deposition equipment;The precursor gas supply system includes N precursor gas supply branch;The gas inlet purge system includes N first purge branch, the first purge branch is respectively connected with the precursor gas supply branch one-to-one, and the gas inlet purge system is used to provide purge gas to the reaction chamber.Wherein, N≥3, and N is natural number.

[0008] Optionally, the precursor gas supply branch includes: a precursor supply device and an intake passage; the precursor supply device is used to store and provide precursors; an intake port of the intake passage is connected to the precursor supply device, an exhaust port of the intake passage is connected to the reaction chamber, a buffer device is provided on the intake passage, and a first control valve and a second control valve are located at two ends of the buffer device; the first control valve and the second control valve are both used to control the on-off of the intake passage; the buffer device is used to store precursors output by the precursor supply device outside the pulse period of precursors; wherein, the first control valve is located at a side of the buffer device close to the intake port of the intake passage, and the second control valve is located at a side of the buffer device close to the exhaust port of the intake passage.

[0009] Optionally, the precursor gas supply branch further includes: a first pressure gauge connected to the top of the buffer device, used to detect the pressure of the buffer device.

[0010] Optionally, the precursor gas supply branch further includes: a carrier gas input passage connected to the precursor supply device, used to provide carrier gas to the precursor supply device; a first flow controller is provided on the carrier gas input passage.

[0011] Optionally, the gas inlet purge system further includes: a purge gas supply device connected to the first purge branch; the purge gas supply device is used to store and provide purge gas; an intake port of the first purge branch is connected to the purge gas supply device, an exhaust port of the first purge branch is connected to the reaction chamber; a plurality of valves are provided on the first purge branch, and a second flow controller is provided on at least one valve.

[0012] Optionally, the gas inlet device of atomic layer deposition equipment further includes: a gas mixing structure in communication with the top of the reaction chamber; the precursor gas supply branch and the first purge branch are both in communication with the gas mixing structure, and the gas mixing structure is in communication with the reaction chamber.

[0013] Optionally, the gas inlet and purge system further comprises a second purge branch, which is in communication with the top of the gas mixing structure, and is used for longitudinal purging from the top of the gas mixing structure to the inside of the reaction chamber.

[0014] Optionally, the precursor supply branch and the first purge branch each comprise an outlet, the outlet of the precursor supply branch is used for supplying the reaction chamber with a precursor, and the outlet of the first purge branch is used for supplying the reaction chamber with a purge gas; the gas inlet device of the atomic layer deposition equipment further comprises: a plurality of three-way valves corresponding to the first purge branch, each three-way valve comprising a first gas inlet, a second gas inlet and an outlet, the first gas inlet being in communication with the outlet of the precursor supply branch, the second gas inlet being in communication with the outlet of the first purge branch, the first gas inlet of the three-way valve being in communication with the outlet of the three-way valve through a normally closed channel, and the second gas inlet of the three-way valve being in communication with the outlet of the three-way valve through a normally open channel; and a plurality of main transmission channels corresponding to the three-way valves, the main transmission channels connecting the outlets of the three-way valves and the gas mixing structure.

[0015] Correspondingly, the utility model also provides an atomic layer deposition equipment, which comprises: a reaction chamber system comprising a reaction chamber; and the gas inlet device of any one of the embodiments of the utility model.

[0016] Optionally, the atomic layer deposition equipment further comprises: a wafer bearing component located in the inside of the reaction chamber; a first edge ring arranged on the side wall of the wafer bearing component; a second edge ring arranged on the inner wall of the reaction chamber, and the first edge ring, the second edge ring and the wafer bearing component are used for dividing the reaction chamber into an upper chamber and a lower chamber, and the first edge ring and the second edge ring have a gap therebetween; a lower chamber purge system in communication with the lower chamber and used for supplying the lower chamber with a purge gas; the precursor supply system is in communication with the upper chamber and used for supplying the upper chamber with a corresponding type of precursor; and the gas inlet and purge system is in communication with the upper chamber and used for supplying the upper chamber with a purge gas.

[0017] Optionally, the lower chamber purge system comprises: a side purge branch in communication with the lower chamber and used for horizontal purging from the conveying port position of the lower chamber to the inside of the lower chamber; and a bottom purge branch in communication with the lower chamber and used for longitudinal purging from the bottom of the lower chamber to the inside of the lower chamber.

[0018] Optionally, the reaction chamber system further comprises a second pressure gauge, which is used for detecting the pressure of the upper chamber when the upper chamber is not being processed.

[0019] Optionally, the atomic layer deposition equipment further comprises an exhaust system connected with the reaction chamber and used for performing exhaust treatment on the reaction chamber.

[0020] Compared with the prior art, the technical scheme of the embodiment of the utility model has the following advantages:

[0021] The gas inlet device of the atomic layer deposition equipment provided in the embodiment of the utility model comprises a precursor gas supply system, the precursor gas supply system comprises N precursor gas supply branches, and the gas inlet device further comprises a gas inlet purge system, the gas inlet purge system comprises N first purge branches, and the first purge branches are connected with the precursor gas supply branches one by one in a one-to-one correspondence, wherein N is greater than or equal to 3. Since the precursor gas supply system comprises at least three precursor gas supply branches, each of the precursor gas supply branches can provide different precursors to the reaction chamber, so that the atomic layer deposition equipment with the gas inlet device can not only prepare a film layer structure with a single material, but also prepare a film layer structure with a plurality of materials, thereby being favorable for improving the diversity of the film layer structure prepared by the atomic layer deposition equipment, being favorable for improving the equipment utilization rate of the atomic layer deposition equipment, being favorable for reducing the time for transporting the wafer between different process equipment, and being favorable for improving the process efficiency and reducing the probability of wafer pollution. BRIEF DESCRIPTION OF DRAWINGS

[0022] Figure 1 is a structural schematic view of a gas inlet device of an atomic layer deposition equipment according to an embodiment of the utility model;

[0023] Figure 2 is Figure 1 is a local enlarged view of the A area;

[0024] Figure 3 is a structural schematic view of an atomic layer deposition equipment according to an embodiment of the utility model. DETAILED DESCRIPTION

[0025] At present, the atomic layer deposition equipment can only deposit a film layer structure with a single material in the same reaction chamber, and if a film layer structure with different materials is deposited, the wafer needs to be transported to different process machines through a crown block system to form corresponding film layer structures on the different process machines, so that not only the equipment procurement amount is large, but also the process time is long. Moreover, the wafer is transported between different process machines, which is easy to increase the probability of wafer pollution.

[0026] In order to solve the above technical problems, the utility model discloses a kind of gas inlet device of atomic layer deposition equipment, comprising: precursor gas supply system and gas inlet purge system, the precursor gas supply system is connected with the reaction chamber of the atomic layer deposition equipment;The precursor gas supply system includes N precursor gas supply branch;The gas inlet purge system includes N first purge branch, the first purge branch is respectively connected with the precursor gas supply branch one-to-one, and the gas inlet purge system is used to provide purge gas to the reaction chamber.Wherein, N≥3, and N is natural number.

[0027] In the scheme disclosed in the embodiment of the utility model, including precursor gas supply system, the precursor gas supply system includes N precursor gas supply branch, and gas inlet purge system, the gas inlet purge system includes N first purge branch, the first purge branch is respectively connected with the precursor gas supply branch one-to-one, and N≥3.Due to the precursor gas supply system at least including three precursor gas supply branches, thus the precursor gas supply branch can provide different precursors to reaction chamber, so that the atomic layer deposition equipment comprising the gas inlet device of the embodiment of the utility model not only can prepare the film layer structure with single material, but also can prepare the film layer structure with the lamination of multiple materials, thereby being favorable for improving the diversity of film layer structure prepared by atomic layer deposition equipment, corresponding being favorable for improving equipment utilization of atomic layer deposition equipment, and being favorable for reducing the time of wafer transmission between different process equipment, corresponding also being favorable for improving process efficiency, reduce the probability of wafer being contaminated.

[0028] In order to make the above-mentioned purpose, features and advantages of the embodiment of the utility model more obvious and easy to understand, the specific embodiments of the utility model are described in detail below with reference to the drawings.

[0029] Figure 1 It is the structure schematic diagram of the gas inlet device of atomic layer deposition equipment embodiment of the utility model, Figure 2 Figure 1 It is the local enlarged view of A area.

[0030] Reference Figures 1 to 2 In the embodiment, the gas inlet device 10 of atomic layer deposition equipment includes: precursor gas supply system 110 and gas inlet purge system 120, the precursor gas supply system 110 is connected with the reaction chamber of the atomic layer deposition equipment;The precursor gas supply system 110 includes N precursor gas supply branch 111;The gas inlet purge system 120 includes N first purge branch 123, the first purge branch 123 is respectively connected with the precursor gas supply branch 111 one-to-one, and the gas inlet purge system 120 is used to provide purge gas to the reaction chamber;Wherein, N≥3, and N is natural number.

[0031] ​Since the precursor gas supply system 110 comprises N precursor gas supply branches 111, and N≥3, that is, the precursor gas supply system 110 comprises at least three precursor gas supply branches 111, each of the precursor gas supply branches 111 can provide different precursors to the reaction chamber, so that the atomic layer deposition equipment comprising the gas inlet device of the embodiment of the utility model can not only prepare a film layer structure with a single material, but also can prepare a film layer structure with a plurality of materials, thereby facilitating to improve the diversity of the film layer structure prepared by the atomic layer deposition equipment, and correspondingly, facilitating to improve the equipment utilization rate of the atomic layer deposition equipment, and facilitating to reduce the time for transporting the wafer between different process equipment, and correspondingly, facilitating to improve the process efficiency and reduce the probability of wafer pollution.

[0032] As an example, the precursor gas supply system 110 comprises four precursor gas supply branches 111. The four precursor gas supply branches 111 can provide four different precursors to the reaction chamber.

[0033] In the embodiment, the precursor gas supply branch 111 comprises a precursor supply device 112 and a gas inlet channel 113; the precursor supply device 112 is used for storing and providing precursors; the gas inlet port of the gas inlet channel 113 is connected to the precursor supply device 112, the gas outlet port of the gas inlet channel 113 is connected to the reaction chamber, the gas inlet channel 113 is provided with a buffer device 1134 and first and second control valves 1133 and 1135 located at both ends of the buffer device, the first and second control valves 1133 and 1135 are both used for controlling the on-off of the gas inlet channel 113, and the buffer device 1134 is used for storing the precursors output by the precursor supply device 112 outside the pulse period of the precursors; wherein the first control valve 1133 is located at the side of the buffer device 1134 close to the gas inlet port of the gas inlet channel 113, and the second control valve 1135 is located at the side of the buffer device 1134 close to the gas outlet port of the gas inlet channel 113.

[0034] Specifically, the precursors in the precursor supply device 112 are in liquid or solid state. The precursors in liquid or solid state are beneficial to improve the amount of precursors stored in the precursor supply device 112. More specifically, the precursor supply device 112 is a liquid tank.

[0035] The buffer device 1134 is used for storing the precursors output outside the pulse period of the precursors to store pressure, thereby facilitating to improve the gas inlet amount of the precursors entering the reaction chamber in the pulse period of the precursors, and further facilitating to improve the uniformity of the film layer structure.

[0036] When outside the precursor pulse period, the first control valve 1133 is opened and the second control valve 1135 is closed, so that the precursor enters the buffer device 1134 temporarily. When inside the precursor pulse period, the first control valve 1133 and the second control valve 1135 are opened, so that the precursor enters the reaction chamber. When replacing the buffer device 1134, the first control valve 1133 and the second control valve 1135 are closed to prevent backflow of residual gas, thereby ensuring safety.

[0037] The first control valve 1133 or the second control valve 1135 can be a pneumatic diaphragm valve or other types of control valves.

[0038] It should be noted that the precursor gas supply branch 111 further comprises a first pressure gauge 1136 (as shown) connected to the top of the buffer device 1134, for detecting the pressure of the buffer device 1134. Figure 2

[0039] When the pressure value of the buffer device 1134 reaches the preset pressure requirement and when inside the precursor pulse period, the first control valve 1133 and the second control valve 1135 are opened, so that the effect of increasing the gas intake of the precursor is better.

[0040] In this embodiment, the precursor supply device 112 comprises a first type of precursor supply device 112 and at least two second types of precursor supply device 112. The first type of precursor supply device 112 is used to store and provide oxygen source precursors or nitrogen source precursors, and the second type of precursor supply device 112 is used to store and provide metal source precursors.

[0041] The oxygen source precursors are used to form metal oxide film layer structures together with the metal source precursors, and the nitrogen source precursors are used to form metal nitride film layer structures together with the metal source precursors.

[0042] It should be noted that the oxygen source includes DI Water (deionized water), O2, O3, etc., and the nitrogen source includes NH3, etc.

[0043] As an example, the precursor supply device 112 comprises one first type of precursor supply device 112 and three second types of precursor supply device 112.

[0044] In other embodiments, the precursor supply device can further comprise at least three second types of precursor supply device, which are used to store and provide metal source precursors. The metal source precursors are used to form metal elemental film layer structures.

[0045] ​In the embodiment, the precursor supply branch 111 further comprises a carrier gas input channel 114 connected with the precursor supply device 112, for providing carrier gas into the precursor supply device 112, and the carrier gas input channel 114 is provided with a first flow controller 115.

[0046] The first flow controller 115 is configured to control the amount of carrier gas entering the precursor supply device 112, thereby controlling the amount of precursor entering the reaction chamber.

[0047] The gas inlet purge system 120 is configured to purge the reaction chamber 101 to remove residual precursor and prevent parasitic reactions.

[0048] In the embodiment, the gas inlet purge system 120 further comprises a purge gas supply device 122 connected with the first purge branch 123, and the purge gas supply device 122 is configured to store and provide purge gas; the gas inlet of the first purge branch 123 is connected with the purge gas supply device 122, the gas outlet of the first purge branch 123 is connected with the reaction chamber, and the first purge branch 123 is provided with a plurality of valves 1234 (as shown in Figure 1 , and at least one valve is provided with a second flow controller 1235 (as shown in Figure 1 ).

[0049] The plurality of valves 1234 provided on the first purge branch 123 is beneficial to improve the safety of the first purge branch 123, for example, to reduce the probability of safety problems during maintenance of the first purge branch 123.

[0050] The second flow controller 1235 is beneficial to reduce the difficulty of controlling the amount of purge gas.

[0051] As an example, the purge gas supply device 122 is specifically a gas cabinet.

[0052] As another example, the purge gas comprises one of inert gas and nitrogen. Specifically, the purge gas comprises one of argon, helium and nitrogen.

[0053] In the embodiment, the gas inlet device 10 of the atomic layer deposition equipment further comprises a gas mixing structure 130 in communication with the top of the reaction chamber; the precursor supply branch 111 and the first purge branch 123 are both in communication with the gas mixing structure 130, and the gas mixing structure 130 is in communication with the reaction chamber.

[0054] The precursor supply branch 111 and the first purge branch 123 are both communicated with the reaction chamber through the gas mixing structure 130, which is beneficial to make the precursor entering the reaction chamber more uniform, thereby being beneficial to make the uniformity of the film layer structure better, and being beneficial to make the purge gas entering the reaction chamber more uniform, thereby being beneficial to make the effect of the purge process better.

[0055] In the embodiment, the gas inlet purge system 120 further comprises a second purge branch 124, which is communicated with the top of the gas mixing structure 130, and is used for longitudinal purging from the top of the gas mixing structure 130 to the inside of the reaction chamber, which is beneficial to improve the effect of the purge process of the reaction chamber, thereby improving the cleanliness of the reaction chamber, and is also beneficial to make the precursor more uniformly distributed in the gas mixing structure 130 when the precursor is provided, and correspondingly, the precursor is also more uniformly distributed in the reaction chamber, thereby being beneficial to make the uniformity of the film layer structure better.

[0056] In the embodiment, the precursor supply branch 111 and the first purge branch 123 both comprise gas outlets, the gas outlet of the precursor supply branch 111 is used for providing the precursor to the reaction chamber, and the gas outlet of the first purge branch 123 is used for providing the purge gas to the reaction chamber; the gas inlet device 10 of the atomic layer deposition equipment further comprises: a plurality of three-way valves 125, the three-way valves 125 correspond to the first purge branch 123 one by one, the three-way valves 125 comprise a first gas inlet 1251, a second gas inlet 1252 and a gas outlet 1253, the first gas inlet 1251 is communicated with the gas outlet of the precursor supply branch 111, the second gas inlet 1252 is communicated with the gas outlet of the first purge branch 123, the first gas inlet 1251 of the three-way valve 125 and the gas outlet 1253 of the three-way valve 125 are a normally closed channel, and the second gas inlet 1252 of the three-way valve 125 and the gas outlet 1253 of the three-way valve 125 are a normally open channel; a plurality of main transmission channels 126 correspond to the three-way valves 125 one by one, and the main transmission channels 126 connect the gas outlet 1253 of the three-way valve 125 and the gas mixing structure 130.

[0057] Since the first purge branch 123 corresponds to the precursor supply branch 111 one by one, and the three-way valves 125 correspond to the first purge branch 123 one by one. Therefore, the first purge branch 123, the precursor supply branch 111 and the three-way valves 125 all correspond one by one. Correspondingly, the first gas inlet 1251 of the three-way valve 125 and the gas outlet 1253 of the three-way valve 125 are a normally closed channel, and the second gas inlet 1252 of the three-way valve 125 and the gas outlet 1253 of the three-way valve 125 are a normally open channel,

[0058] When the precursor supply branch 111 does not supply precursor to the reaction chamber, the first purge branch 123 can supply purge gas to the reaction chamber, that is, when one of the precursor supply branches 111 supplies precursor to the reaction chamber 101, the first purge branch 123 corresponding to the precursor supply branch 111 does not supply purge gas to the reaction chamber 101, but the remaining first purge branches 123 all supply purge gas to the reaction chamber, so that the precursor is uniformly distributed in the reaction chamber, thereby facilitating the uniformity of the formed film layer structure to be better, and facilitating the probability of precursor backflow to the main transmission channel 126 to be reduced.

[0059] Moreover, when the precursor supply branch 111 does not supply precursor to the reaction chamber, the corresponding first purge branch 123 can supply purge gas to the reaction chamber, so that the flow of gas entering the reaction chamber is stable, thereby the internal pressure of the reaction chamber is stable, and thus the process stability of the atomic layer deposition process is better, and the thickness uniformity of the formed film layer structure is better.

[0060] In the step of performing the purge process, at least three first purge branches 123 all supply purge gas to the reaction chamber, thereby facilitating the effect of purging the reaction chamber, and thus the cleanliness of the reaction chamber is improved.

[0061] As an example, each of the gas inlet channels 113 and the corresponding first purge branch 123 are connected to the gas mixing structure 130 and the reaction chamber 101 through the corresponding main transmission channel 126. More specifically, the number of gas inlet channels 113 is four, and the number of main transmission channels 126 is also four.

[0062] Correspondingly, the utility model also provides an atomic layer deposition equipment. Figure 3 It is the structure schematic diagram of an embodiment of the utility model atomic layer deposition equipment.

[0063] Reference Figure 3 , and in combination with reference Figures 1 to 2 In this embodiment, the atomic layer deposition equipment 20 comprises: a reaction chamber system 100, the reaction chamber system 100 comprises a reaction chamber 101; the gas inlet device 10 of any embodiment of the utility model atomic layer deposition equipment.

[0064] The reaction chamber 101 is used to provide a process space position for atomic layer deposition processing.

[0065] Since the front body gas supply system 110 at least includes three front body gas supply branches 111, each front body gas supply branch 111 can provide different front bodies to the reaction chamber 101, so that the atomic layer deposition equipment 20 of the embodiment of the utility model not only can prepare a film layer structure with a single material, but also can prepare a film layer structure with a plurality of materials, thereby facilitating to improve the diversity of the film layer structure prepared by the atomic layer deposition equipment 20, and correspondingly, facilitating to improve the equipment utilization rate of the atomic layer deposition equipment 20, and facilitating to reduce the time of wafer transmission between different process equipment, and correspondingly, facilitating to improve the process efficiency and reduce the probability of wafer pollution.

[0066] In the embodiment, the atomic layer deposition equipment 20 further comprises: a wafer bearing component 102 located inside the reaction chamber 101; a first edge ring 104 arranged on the sidewall of the wafer bearing component 102; a second edge ring 103 arranged on the inner wall of the reaction chamber 101, and the first edge ring 104, the second edge ring 103 and the wafer bearing component 102 are used to divide the reaction chamber 101 into an upper chamber 105 and a lower chamber 106, and there is a gap between the first edge ring 104 and the second edge ring 103; a lower chamber purge system 150 in communication with the lower chamber 106, used to provide purge gas to the lower chamber 106; the front body gas supply system 110 is in communication with the upper chamber 105, used to provide corresponding types of front bodies to the upper chamber 105; the gas inlet purge system 120 is in communication with the upper chamber 105, used to provide purge gas to the upper chamber 105.

[0067] The wafer bearing component 102 is used to bear a wafer (not shown in the figure).

[0068] The upper chamber 105 is used as a process chamber for atomic layer deposition processing.

[0069] The lower chamber 106 is used as a transmission channel between the conveying port (not shown in the figure) and the upper chamber 105, so that the wafer to be processed by atomic layer deposition is conveyed to the upper chamber 105 through the lower chamber 106 for atomic layer deposition processing, or the wafer processed by atomic layer deposition is conveyed to the conveying port through the lower chamber 106 for subsequent processes.

[0070] The first edge ring 104, the second edge ring 103 and the wafer bearing component 102 are used to divide the reaction chamber 101 into the upper chamber 105 and the lower chamber 106, so that the reaction residual gas in the upper chamber 105 is not easy to enter the lower chamber 106, thereby making the cleanliness of the lower chamber 106 better, and correspondingly, reducing the probability of the reaction residual gas in the upper chamber 105 entering other semiconductor equipment through the lower chamber 106.

[0071] Specifically, the pressure of the lower chamber 106 is greater than the pressure of the upper chamber 105, which is advantageous for further reducing the probability of the residual gas in the upper chamber 105 entering the lower chamber 106.

[0072] As an example, the materials of the first edge ring 104 and the second edge ring 103 are both quartz.

[0073] Since there is a gap between the first edge ring 104 and the second edge ring 103, the lower chamber purge system 150 is used to provide purge gas to the lower chamber 106, which is advantageous for making the cleanliness of the lower chamber 106 better, and also advantageous for making the uniformity of the edge position of the film layer structure and the center position of the film layer structure better.

[0074] In the embodiment, the lower chamber purge system 150 includes a side purge branch 151, which is in communication with the lower chamber 106 and is used to perform horizontal purge from the transfer port position of the lower chamber 106 to the inside of the lower chamber 106; and a bottom purge branch 152, which is in communication with the lower chamber 106 and is used to perform vertical purge from the bottom of the lower chamber 106 to the inside of the lower chamber 106.

[0075] The side purge branch 151 is advantageous for forming an air curtain at the transfer port position, so as to make the cleanliness of the transfer port position better, and the bottom purge branch 152 is advantageous for further reducing the probability of the residual gas in the upper chamber 105 entering the lower chamber 106, so as to make the cleanliness of the lower chamber 106 better, and also advantageous for making the thickness uniformity of the edge position and the center position of the film layer structure better.

[0076] In the embodiment, the reaction chamber system 100 further includes a second pressure gauge 162, which is used to detect the pressure of the upper chamber 105 when it is not in process, so as to open the connection channel between the atomic layer deposition equipment 20 and other semiconductor equipment when the pressure of the upper chamber 105 meets the preset requirement.

[0077] Specifically, the reaction chamber system 100 further comprises: a third pressure gauge 163, a fourth pressure gauge 164 and a fifth pressure gauge 165; the third pressure gauge 163 is used for monitoring the uncovering pressure of the upper chamber 105, facilitating opening the top cover of the reaction chamber 101 when the pressure in the upper chamber 105 is close to the atmospheric pressure, thereby facilitating ensuring the safety of uncovering; the fourth pressure gauge 164 is used for monitoring the pressure of the upper chamber 105 during process treatment, facilitating performing atomic layer deposition treatment when the pressure of the upper chamber 105 meets the preset requirement; and the fifth pressure gauge 165 is used for monitoring the pressure of the lower chamber 106 during process treatment, facilitating making the pressure of the lower chamber 106 greater than the pressure of the upper chamber 105 during the atomic layer deposition treatment.

[0078] In the embodiment, the atomic layer deposition device further comprises: a first heating element (not shown in the figure) located in the gas mixing structure 130; and a second heating element (not shown in the figure) located at the connecting position of the precursor gas supply branch 111 and the three-way valve 125.

[0079] The first heating element is used for heating the precursor in the gas mixing structure 130, thereby reducing the probability of clogging the gas mixing structure 130 due to condensation of the precursor.

[0080] The second heating element is used for heating the precursor in the precursor gas supply branch 111, thereby reducing the probability of clogging the precursor gas supply branch 111 due to condensation of the precursor.

[0081] In the embodiment, the atomic layer deposition device further comprises: a gas extraction system 160 connected to the reaction chamber 101 and used for performing gas extraction treatment on the reaction chamber 101.

[0082] The gas extraction system 160 is used for performing gas extraction treatment on the reaction chamber 101 when the reaction chamber 101 is provided with a precursor or when the reaction chamber 101 is provided with a purge treatment.

[0083] As an example, the gas extraction system comprises a dry pump (not shown in the figure) and a butterfly valve (not shown in the figure). The dry pump and the butterfly valve facilitate making the pressure of the reaction chamber 101 meet the preset requirement.

[0084] For specific description of the gas inlet device, please refer to the detailed introduction of the foregoing embodiment, which will not be described herein again.

[0085] Although the utility model discloses as above, the utility model is not limited to this. Any person skilled in the art, without departing from the spirit and scope of the utility model, can make various changes and modifications, therefore the protection scope of the utility model should be the range limited by the claims.

Claims

1. An intake device of an atomic layer deposition apparatus, characterized by, The application relates to an atomic layer deposition equipment and a gas supply system thereof. The gas supply system comprises a precursor gas supply system and an inlet gas purging system, wherein the precursor gas supply system is connected with a reaction chamber of the atomic layer deposition equipment. The precursor gas supply system comprises N precursor gas supply branches. The inlet gas purging system comprises N first purging branches, wherein the first purging branches are connected with the precursor gas supply branches one by one, and the inlet gas purging system is used for supplying purging gas to the reaction chamber. N is greater than or equal to 3 and is a natural number.

2. The gas inlet apparatus of the atomic layer deposition apparatus according to claim 1, wherein The precursor gas supply branch comprises a precursor supply device and an inlet gas channel. The precursor supply device is used for storing and supplying precursor. An inlet of the inlet gas channel is connected with the precursor supply device, an outlet of the inlet gas channel is connected with the reaction chamber, a buffer device is arranged on the inlet gas channel, and a first control valve and a second control valve are arranged at two ends of the buffer device. The first control valve is arranged at a side of the buffer device close to the inlet of the inlet gas channel, and the second control valve is arranged at a side of the buffer device close to the outlet of the inlet gas channel.

3. The gas inlet apparatus of the atomic layer deposition apparatus according to claim 2, wherein The precursor gas supply branch further comprises a first pressure gauge connected with a top of the buffer device and used for detecting the pressure of the buffer device.

4. The gas inlet apparatus of the atomic layer deposition apparatus according to claim 2, wherein The precursor gas supply branch further comprises a carrier gas input channel connected with the precursor supply device and used for supplying carrier gas to the precursor supply device, and a first flow controller is arranged on the carrier gas input channel.

5. The gas inlet apparatus of an atomic layer deposition apparatus according to claim 1, wherein The inlet gas purging system further comprises a purging gas supply device connected with the first purging branch, and the purging gas supply device is used for storing and supplying purging gas. An inlet of the first purging branch is connected with the purging gas supply device, an outlet of the first purging branch is connected with the reaction chamber, a plurality of valves are arranged on the first purging branch, and a second flow controller is arranged on at least one valve.

6. The gas inlet apparatus of an atomic layer deposition apparatus according to claim 1, wherein The inlet device of the atomic layer deposition equipment further comprises a gas mixing structure in communication with a top of the reaction chamber. The precursor gas supply branch and the first purging branch are in communication with the gas mixing structure and are in communication with the reaction chamber through the gas mixing structure.

7. The gas inlet apparatus of the atomic layer deposition apparatus according to claim 6, wherein The inlet gas purging system further comprises a second purging branch in communication with the top of the gas mixing structure and used for performing longitudinal purging from the top of the gas mixing structure to the inside of the reaction chamber.

8. The gas inlet arrangement of an atomic layer deposition apparatus according to claim 6 or 7, characterized in that The precursor gas supply branch and the first purging branch each comprise an outlet, the outlet of the precursor gas supply branch is used for supplying precursor to the reaction chamber, and the outlet of the first purging branch is used for supplying purging gas to the reaction chamber. The inlet device of the atomic layer deposition equipment further comprises a plurality of three-way valves corresponding to the first purge branch one-to-one, the three-way valves comprising a first gas inlet, a second gas inlet and a gas outlet, the first gas inlet being in communication with the gas outlet of the precursor gas supply branch, the second gas inlet being in communication with the gas outlet of the first purge branch, the first gas inlet of the three-way valve and the gas outlet of the three-way valve being a normally closed channel, the second gas inlet of the three-way valve and the gas outlet of the three-way valve being a normally open channel; a plurality of main transmission channels corresponding to the three-way valves one-to-one, the main transmission channels connecting the gas outlets of the three-way valves and the gas mixing structure.

9. An atomic layer deposition apparatus, characterized by, comprising: a reaction chamber system comprising a reaction chamber; the gas inlet device of the atomic layer deposition equipment according to any one of claims 1-8.

10. An atomic layer deposition apparatus according to claim 9, characterized in that, The atomic layer deposition equipment further comprises: a wafer carrying component located inside the reaction chamber; a first edge ring arranged on the sidewall of the wafer carrying component; a second edge ring arranged on the inner wall of the reaction chamber, and the first edge ring, the second edge ring and the wafer carrying component are used to divide the reaction chamber into an upper chamber and a lower chamber, and the first edge ring and the second edge ring have a gap therebetween; a lower chamber purge system in communication with the lower chamber for providing purge gas to the lower chamber; The precursor gas supply system is in communication with the upper chamber for providing corresponding types of precursors to the upper chamber; The gas inlet purge system is in communication with the upper chamber for providing purge gas to the upper chamber.

11. An atomic layer deposition apparatus according to claim 10, characterized in that, The lower chamber purge system comprises: a side purge branch in communication with the lower chamber for transversely purging the inside of the lower chamber from the transfer port position of the lower chamber; a bottom purge branch in communication with the lower chamber for longitudinally purging the inside of the lower chamber from the bottom of the lower chamber.

12. The atomic layer deposition apparatus of claim 10, wherein, The reaction chamber system further comprises a second pressure gauge for detecting the pressure of the upper chamber when it is not being processed.

13. The atomic layer deposition apparatus of claim 9, wherein The atomic layer deposition equipment further comprises: an exhaust system in communication with the reaction chamber for performing exhaust treatment on the reaction chamber.

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