A device

Abstract

The embodiment of the utility model provides a device, which comprises a first baffle plate, a second baffle plate and a third baffle plate, the first end face of the supporting ring in the axial direction is connected with the first baffle, and the second end face of the supporting ring in the axial direction can be connected with a first to-be-deposited piece in a matched mode through a first matched connection part; and the second baffle is provided with a second ventilation opening, and the second baffle can be connected with the first to-be-deposited piece in a matched mode through the second matched connection. When the first to-be-deposited piece is connected with the supporting ring and the second baffle in a matched mode at the same time, the first baffle, the supporting ring, the first to-be-deposited piece and the second baffle jointly define a deposition cavity, and the to-be-deposited face of the first to-be-deposited piece forms part of the inner wall of the deposition cavity.

Description

TECHNICAL FIELD

[0001] The present specification relates to the technical field of chemical vapor deposition (CVD), in particular to an apparatus. BACKGROUND

[0002] Silicon carbide (SiC) crystal as an important wide band gap semiconductor material, due to its excellent performance in high temperature, high frequency and high power field, is widely used in new energy vehicles, renewable energy, high power electronic devices and radio frequency communication fields. There are various defects in the process of growing SiC crystal by physical vapor transport (PVT) method, including carbon inclusions. Studies have shown that the generation of carbon inclusions in the crystal will induce the proliferation of dislocation defects, which will seriously deteriorate the crystal quality. The generation of carbon inclusions is mainly due to the reaction of gas phase substances generated by the decomposition and sublimation of the growth raw material with the carbon in the inner wall of the graphite crucible during the transmission to the growth interface. Then, loose and porous small carbon particles are formed on the inner wall, which may be further transported to the growth interface under the action of convection and captured into the crystal interior to form carbon inclusions, thereby reducing the crystal quality. Therefore, treating the inner wall of the graphite crucible is beneficial to improving the quality of SiC crystal grown by PVT method.

[0003] Therefore, it is desirable to provide an apparatus for covering a dense metal compound film layer, such as nitride, boride and carbide, on the surface of a graphite assembly constituting a graphite crucible to isolate the reaction of gas phase components with the inner wall of the graphite crucible, thereby significantly reducing the problem of carbon inclusions in the crystal and improving the crystal quality. CONTENT OF THE INVENTION

[0004] One or more embodiments of the present specification provide an apparatus applied to a chemical vapor deposition process of one or more pieces to be deposited, the apparatus comprising: a first baffle plate, the first baffle plate being provided with a first gas exchange opening; a support ring, the first end surface of the support ring along its axial direction being connected with the first baffle plate, and the second end surface of the support ring along its axial direction being capable of being connected with a first piece to be deposited through a first connecting part; a second baffle plate, the second baffle plate being provided with a second gas exchange opening, and the second baffle plate being capable of being connected with the first piece to be deposited through a second connecting part; wherein when the first piece to be deposited is connected with the support ring and the second baffle plate at the same time, the first baffle plate, the support ring, the first piece to be deposited and the second baffle plate jointly enclose a deposition cavity, and the deposition surface of the first piece to be deposited constitutes part of the inner wall of the deposition cavity.

[0005] In some embodiments, the inner wall of the support ring is provided with a flow uniformizing plate, the flow uniformizing plate being provided with a plurality of flow uniformizing holes along its axial direction.

[0006] In some embodiments, a ratio of a total cross-sectional area of the plurality of flow equalizing holes to a cross-sectional area of the flow equalizing plate ranges from 0.2 to 0.5; the cross-section is perpendicular to an axial direction of the flow equalizing plate.

[0007] In some embodiments, the device further comprises a flow distribution plate located between the first baffle plate and the support ring and connected to the support ring and the first baffle plate; a surface of the flow distribution plate located in the mixing chamber is an inclined surface, the inclined surface faces the flow equalizing plate, and an included angle between the inclined surface and the flow equalizing plate ranges from 20° to 60°.

[0008] In some embodiments, a plurality of the second connecting portions are arranged on the second baffle plate; the device further comprises a connecting ring arranged between the second baffle plate and the first deposition member, one end of the connecting ring along an axial direction thereof is connected to one of the plurality of the second connecting portions, and the other end of the connecting ring along the axial direction thereof is connected to the first deposition member.

[0009] In some embodiments, the device further comprises at least two groups of first heating assemblies, the at least two groups of first heating assemblies are at least partially arranged outside the first deposition member along an axial direction thereof; the at least two groups of first heating assemblies are independently controllable and used for partition heating of the first deposition member.

[0010] In some embodiments, the device further comprises a support column arranged at a center of the flow equalizing plate, one end of the support column is located in the deposition chamber, the other end of the support column is located in the mixing chamber, and an end surface of the support column located in the mixing chamber is in a circular arc shape; a plurality of support rods are arranged on the support column along an axial direction thereof, and the support rods are configured to place the second deposition member.

[0011] In some embodiments, the plurality of support rods are retractable along a radial direction of the support column; support members for supporting the second deposition member are arranged on the plurality of support rods; and a positioning clamping groove is arranged on one end of the plurality of support rods away from the support column, and a height of the positioning clamping groove is greater than a height of the support members.

[0012] In some embodiments, a distance between two adjacent support rods of the plurality of support rods ranges from 10 mm to 100 mm.

[0013] In some embodiments, the device further comprises a second heating assembly arranged inside the support column and configured to heat the support column.

[0014] In some embodiments, the device further comprises a heat insulation plate located at least partially between the support column and the first deposition object, so as to divide the deposition cavity into a first deposition cavity and a second deposition cavity.

[0015] In some embodiments, the minimum distance from the support rod to the second connecting part is not less than 100mm-300mm. BRIEF DESCRIPTION OF DRAWINGS

[0016] The present specification will be further explained in the way of exemplary embodiments, which will be described in detail with reference to the accompanying drawings. These embodiments are not limiting, in which the same reference numbers represent the same structures, wherein:

[0017] Figure 1 is a structural schematic diagram of a device according to some embodiments of the present specification;

[0018] Figure 2 is a top view of a baffle according to some embodiments of the present specification;

[0019] Figure 3 is a structural schematic diagram of a first baffle and a second baffle according to some embodiments of the present specification;

[0020] Figure 4 is an exploded schematic diagram of a deposition cavity sidewall according to some embodiments of the present specification;

[0021] Figure 5 is a structural schematic diagram of a support rod and a second deposition object according to some embodiments of the present specification;

[0022] Figure 6 is a structural schematic diagram of a device according to some other embodiments of the present specification.

[0023] In the drawings:

[0024] 10, device;

[0025] 110, first baffle; 1101, first annular groove; 111, first air exchange port;

[0026] 120, support ring; 1201, first annular protrusion; 121, first end face; 122, second end face; 1221, first connecting part;

[0027] 130, second baffle; 131, second air exchange port; 132, second connecting part; 1321, second annular groove;

[0028] 140, first deposition object; 141, deposition surface;

[0029] 150, flow equalization plate; 151, flow equalization hole;

[0030] 160, flow distribution plate; 161, inclined surface;

[0031] 170, connecting ring; 171, second annular protrusion;

[0032] 180, first heating assembly;

[0033] 190, support column; 191, support rod; 1911, support piece; 192, positioning clamping groove;

[0034] 200, second heating assembly;

[0035] 210, heat insulation plate;

[0036] 20, second deposition object. DETAILED DESCRIPTION

[0037] The drawings needed to be used in the description of the embodiments will be briefly introduced below. The drawings do not represent all the embodiments.

[0038] As used herein, “system”, “device”, “unit” and / or “module” are a method for distinguishing different components, elements, parts, sections or assemblies at different levels. However, if other words can achieve the same purpose, the words can be replaced by other expressions.

[0039] As shown in the specification, unless the context clearly indicates otherwise, “a”, “one”, “an” and / or “the” do not refer to the singular, but can also include the plural. Generally, the terms “include” and “contain” only indicate the inclusion of the steps and elements explicitly identified, and these steps and elements do not constitute an exclusive list, and the method or device can also include other steps or elements.

[0040] In the embodiments of the specification, when the operations performed in steps are described, unless otherwise specified, the order of the steps is interchangeable, the steps can be omitted, and other steps can be included in the operation process.

[0041] Figure 1 is a structural schematic diagram of the device shown in some embodiments of the specification. Reference can be made to Figure 1 Some embodiments are understood below, but the drawings are only schematic of some embodiments, and do not constitute a limitation on the embodiments.

[0042] Some embodiments of the specification provide a device 10 applied to a chemical vapor deposition (CVD) process of one or more deposition objects. As shown in Figure 1As shown, the device 10 includes a first baffle 110, a support ring 120, and a second baffle 130.

[0043] In some embodiments, a first ventilation port 111 is provided on the first baffle 110; the first end face 121 of the support ring 120 along its axial direction is connected to the first baffle 110, and the second end face 122 of the support ring 120 along its axial direction can pass through the first mating part ( Figure 1 (Not shown in the image) is mated with the first deposition piece 140; a second air vent 131 is provided on the second baffle 130, and the second baffle 130 can pass through the second mating part ( Figure 1 (Not shown) is connected to the first deposition piece 140. When the first deposition piece 140 is simultaneously connected to the support ring 120 and the second baffle 130, the first baffle 110, the support ring 120, the first deposition piece 140 and the second baffle 130 together enclose the deposition cavity S1, and the deposition surface 141 of the first deposition piece 140 constitutes part of the inner wall of the deposition cavity S1.

[0044] A mating is a method of connecting two parts to each other. In some embodiments, mating can include direct connections and indirect connections. Direct connections can include adhesive bonding, threaded connections, snap-fit ​​connections, etc. Indirect connections can include connections via other components.

[0045] The first baffle 110 is a plate-shaped component in the device 10. When the first baffle 110 is disposed at the bottom of the device, it can form the lower wall of the device 10. The material of the first baffle 110 may include graphite or other materials with similar physical properties and chemical stability. In some embodiments, the material of the first baffle 110 is graphite.

[0046] The first ventilation port 111 refers to the opening provided on the first baffle 110. For example... Figure 1 As shown, the first vent 111 can be disposed in the center of the first baffle 110. In some embodiments, the first vent 111 can be used for the reaction gas to enter the deposition chamber S1.

[0047] The reaction gas refers to the gas required in the CVD process. For example, the reaction gas can include metal source gas, non-metal reaction gas, or other gases required in the CVD process.

[0048] In some embodiments, the first vent 111 may be connected to an external gas supply device (not shown in the figure) to continuously supply reaction gas into the deposition chamber S1. It should be understood that the structural dimensions (such as diameter) and shape of the first vent 111 can be set according to actual needs.

[0049] The support ring 120 is a component of the device 10 for supporting and fixing the first object 140 to be deposited. In some embodiments, the material of the support ring 120 can be the same as that of the first baffle 110. For example, graphite or the like.

[0050] In some embodiments, the support ring 120 can be designed in various structural shapes. For example, the support ring 120 can be a circular ring or other suitable shape for support, etc.

[0051] The first end surface 121 is an end surface of the support ring 120 close to the first baffle 110. In some embodiments, the first end surface 121 can be connected to the first baffle 110 in various ways. Exemplary connection ways include, but are not limited to, clamping, bonding, threaded connection, etc.

[0052] In some embodiments, the connection way of the first end surface 121 to the first baffle 110 is related to the structural form of the first end surface and the first baffle 110. For example, when the opposite end surfaces of the first end surface 121 and the first baffle 110 are both flat surfaces, the first end surface 121 and the first baffle 110 can be connected by bonding or the like.

[0053] Figure 2 is a top view of a baffle according to some embodiments of the present specification; Figure 3 is a structural schematic view of a first baffle and a second baffle according to some embodiments of the present specification; Figure 4 is an exploded schematic view of a deposition cavity side wall according to some embodiments of the present specification.

[0054] In some embodiments, as shown in Figures 2-4 The first baffle 110 is provided with a plurality of first annular grooves 1101 with internal threads at one end close to the support ring 120, and the first end surface 121 of the support ring 120 is correspondingly provided with at least one first annular protrusion 1201 with external threads. The first end surface 121 and the first baffle 110 can be connected by threadedly engaging the at least one first annular protrusion 1201 of the first end surface 121 with the at least one first annular groove 1101 of the first baffle 110.

[0055] The setting position of the at least one first annular protrusion 1201 with external threads can correspond to the setting position of the second fitting part 132 on the second baffle 130 in the axial direction of the device 10.

[0056] It should be noted that when there is an empty first annular groove 1101 on the first baffle 110, other components (such as the filling ring described later) can be selected to fill in the first annular groove 1101 according to actual conditions, so that the surface of the first baffle 110 is as flat as possible to enhance the stability of the gas flow transport process.

[0057] The second end surface 122 is an end surface of the support ring 120 away from the first baffle 110. In some embodiments, the second end surface 122 can be coupled with the first deposition target 140 via a first coupling portion 1221.

[0058] The first coupling portion 1221 refers to a component for coupling the first deposition target 140 with the support ring 120. The structural shape of the first coupling portion 1221 can include a ring-shaped recess or a ring-shaped protrusion structure (e.g., a first ring-shaped protrusion 1201), or other structural shapes with similar coupling effects, etc. In some embodiments, the first coupling portion 1221 can be disposed on the second end surface 122 of the support ring 120.

[0059] It should be understood that the second end surface 122 of the support ring 120 along its axial direction can also be directly coupled with the first deposition target 140. Exemplary coupling manners can include bonding, etc.

[0060] The first deposition target 140 refers to a workpiece that needs to be deposited with a compound coating layer in a CVD process. In some embodiments, the first deposition target 140 can be a graphite component that constitutes a graphite crucible. For example, the first deposition target 140 can be a graphite ring, and a plurality of graphite rings collectively constitute the sidewall of a graphite crucible.

[0061] The coating layer refers to one or more layers of compounds deposited on the surface of a substrate. In some embodiments, the coating layer can be formed by chemical reactions of reaction gases entering via the first gas exchange port 111 under high-temperature conditions through a CVD process. For example, the coating layer can include a nitride coating layer, a carbide coating layer, a boride coating layer, or other high-density metal compound coating layers, etc. In some embodiments, the coating layer can be deposited on the deposition surface 141 of the first deposition target 140. For more information about the deposition surface, please refer to the following description. Figure 1

[0062] In some embodiments, one end of the first deposition target 140 close to the support ring 120 can be correspondingly provided with a structure for coupling with the first coupling portion 1221. For example, when the first coupling portion 1221 is provided with a ring-shaped recess structure at a radially distal end close to one end of the first deposition target 140, the first deposition target 140 at the end close to the first coupling portion 1221 can be correspondingly provided with a ring-shaped protrusion structure.

[0063] In some embodiments, the first deposition target 140 can include one or more first deposition sub-targets, and the plurality of first deposition sub-targets are coupled with each other along the axial direction to form the first deposition target 140. For example, Figure 1 、 Figure 4 ​As shown, the first deposition part 140 includes at least two first deposition sub-parts, and each first deposition sub-part is provided with an annular protruding structure at a radially distal end close to one end of the first baffle 110, and is correspondingly provided with an annular recess structure at a radially distal end away from the other end of the first baffle 110. The two first deposition sub-parts can be combined by the annular recess structure and the annular protruding structure, thereby forming the first deposition part 140.

[0064] In some embodiments, one of the first deposition sub-parts in the first deposition part 140 can serve as a support ring 120. It should be noted that the first deposition part 140 can also be any other feasible component, and the first connecting part 1221 and the first deposition part 140 can also be connected by any other feasible structure.

[0065] The second baffle 130 refers to a plate-shaped component located at the top of the device 10. The second baffle 130 is used to form the upper wall of the device 10. The material of the second baffle 130 can include graphite or other materials with similar physical properties and chemical stability. In some embodiments, the material of the second baffle 130 is graphite.

[0066] The second gas exchange port 131 refers to an opening provided on the second baffle 130. As shown, Figure 1 The second gas exchange port 131 can be provided at the center of the second baffle 130. In some embodiments, the second gas exchange port 131 can be connected with the exhaust assembly to form a channel for discharging the reaction gas from the deposition cavity S1.

[0067] In some embodiments, the second gas exchange port 131 can be connected with an external gas storage device (not shown) to collect the reaction gas discharged from the deposition cavity S1. It should be understood that the structure size (such as diameter) and structure shape of the second gas exchange port 131 can be set according to actual needs.

[0068] The second connecting part 132 refers to a component for connecting the second baffle 130 and the first deposition part 140. In some embodiments, the second connecting part 132 is provided at one end of the second baffle 130 close to the first deposition part 140. In some embodiments, the second connecting part 132 and the second baffle 130 can be an integrally formed structure, or can be a separate structure. For example, the second connecting part 132 can be connected with the second baffle 130 by adhesion, clamping or other means.

[0069] In some embodiments, the second connecting part 132 can be designed in various structure forms, including but not limited to an annular recess or an annular protruding structure. For example, the second connecting part 132 can be a second annular recess 1321 with internal threads. For more information about the second connecting part, please refer to the relevant description in the following.

[0070] The deposition cavity S1 refers to a cavity for gas flow, chemical reaction and coating deposition in the CVD process. As shown in Figure 1 The deposition cavity S1 can be cylindrical or the like. In some embodiments, when the first deposition member 140 is simultaneously connected with the support ring 120 and the second baffle 130, the first baffle 110, the support ring 120, the first deposition member 140 and the second baffle 130 jointly enclose the deposition cavity S1.

[0071] In some embodiments, the deposition surface 141 of the first deposition member 140 constitutes part of the inner wall of the deposition cavity S1, the first baffle 110 constitutes the bottom of the deposition cavity S1, the second baffle 130 constitutes the top of the deposition cavity S1, and the support ring 120 is located at the lowermost layer of the deposition cavity S1 for supporting and mounting the first deposition member 140.

[0072] The deposition surface 141 refers to the substrate surface covered by the coating in the chemical vapor deposition process. In some embodiments, the deposition surface 141 is part or all of the inner wall of the first deposition member 140.

[0073] In some embodiments, after the reaction gas enters the deposition cavity S1 through the first gas exchange port 111, it will chemically react with the deposition surface 141 of the first deposition member 140, thereby forming the required coating on the deposition surface 141 of the first deposition member 140.

[0074] In some embodiments of the present disclosure, the device adopts a first baffle, a support ring and a second baffle. When the first deposition member is simultaneously connected with the support ring and the second baffle, the first baffle, the support ring, the first deposition member and the second baffle jointly enclose a deposition cavity, and the deposition surface of the first deposition member constitutes part of the inner wall of the deposition cavity, so that the deposition surface of the first deposition member can deposit a dense metal compound coating, and the first deposition member after depositing the coating can be used as a component in a graphite crucible for crystal growth, which can significantly inhibit the chemical reaction process of gas phase components on the graphite wall, weaken the problem of carbon inclusion in the crystal, and improve the purity and quality of the crystal. Moreover, the first deposition member of the device is detachably connected with the support ring and the second baffle, so that when the deposition surface of the first deposition member completes the coating deposition, the next batch of first deposition members can be replaced, the device has high utilization rate and low cost. At the same time, the plurality of connecting parts provided on the baffle can also adapt to deposition members of different sizes to produce graphite crucibles of various models. In addition, other deposition members can also be simultaneously deposited in the deposition cavity to meet the deposition needs of various workpieces, and the utilization rate of the reaction gas is high, thereby reducing the cost.

[0075] In some embodiments, as shown in Figure 1 The inner wall of the support ring 120 is provided with a flow uniformizing plate 150, and the flow uniformizing plate 150 is provided with a plurality of flow uniformizing holes 151 along the axial direction thereof.

[0076] The flow uniformizing plate 150 refers to a component for uniformly distributing the reaction gas entering the deposition cavity S1. In some embodiments, the flow uniformizing plate 150 can be made of graphite or other high-temperature-resistant and corrosion-resistant materials.

[0077] In some embodiments, the flow uniformizing plate 150 is uniformly provided with a plurality of flow uniformizing holes 151 along the axial direction thereof as flow channels to enable the reaction gas to be uniformly distributed when entering the deposition cavity S1. The structural size and distribution pitch of the flow uniformizing holes 151 can be pre-set by the technician as required.

[0078] In some embodiments, the ratio of the total cross-sectional area of the plurality of flow uniformizing holes 151 to the cross-sectional area of the flow uniformizing plate 150 ranges from 0.2 to 0.5. In some embodiments, the ratio of the total cross-sectional area of the plurality of flow uniformizing holes 151 to the cross-sectional area of the flow uniformizing plate 150 ranges from 0.15 to 0.55. In some embodiments, the ratio of the total cross-sectional area of the plurality of flow uniformizing holes 151 to the cross-sectional area of the flow uniformizing plate 150 ranges from 0.3 to 0.6. For example, the ratio of the total cross-sectional area of the plurality of flow uniformizing holes 151 to the cross-sectional area of the flow uniformizing plate 150 is 0.3. The cross-section is perpendicular to the axial direction of the flow uniformizing plate 150. In some embodiments, the axial direction of the flow uniformizing plate 150 can be represented by the X direction shown in FIG. 1. Figure 1

[0079] In some embodiments of the present specification, by limiting the ratio of the total cross-sectional area of the flow uniformizing holes to the cross-sectional area of the flow uniformizing plate, the air permeability of the flow uniformizing plate can be within an optimal range, avoiding the situation that the air permeability of the flow uniformizing plate is too large and the gas directly enters the deposition cavity without being mixed.

[0080] In some embodiments, the flow uniformizing plate 150 can be jointly enclosed with the support ring 120 and the first baffle 110 to form a mixing cavity S2.

[0081] The mixing cavity S2 refers to a space or region for mixing and pre-treating the reaction gas entering the deposition cavity S1. As shown in FIG. 1, the mixing cavity S2 is located below the deposition cavity S1 and is in communication with the deposition cavity S1 through the flow uniformizing plate 150. Figure 1

[0082] In some embodiments, the flow uniformizing plate 150 can be connected to the inner wall of the support ring 120 in various ways. For example, the edge of the flow uniformizing plate 150 can be a clamping groove or a flange, and after the first end surface 121 of the support ring 120 along the axial direction thereof is connected to the first baffle 110, the edge of the flow uniformizing plate 150 can be connected to the upper edge of the support ring 120 by embedding to jointly enclose the mixing cavity S2.

[0083] ​​In some embodiments of this specification, local turbulence or inhomogeneity may occur after the reactive gas enters the mixing chamber. By introducing a flow equalization plate, the velocity and direction of the airflow can be effectively balanced, reducing the impact of turbulence on the deposition chamber. This ensures that the gas flow rate and component concentration of the reactive gas entering the deposition chamber reach an ideal uniform state, avoiding local oversaturation and thus improving the quality of the deposited coating.

[0084] In some embodiments, such as Figure 1 As shown, the device 10 also includes a flow divider 160, which is located between the first baffle 110 and the support ring 120, and is connected to both the support ring 120 and the first baffle 110. The surface of the flow divider 160 within the mixing chamber S2 is an inclined surface 161, which faces the flow equalization plate 150, and there is an angle between the inclined surface 161 and the flow equalization plate 150, the angle ranging from 20° to 60°. For more information about the mixing chamber, please refer to the relevant description above.

[0085] The flow divider 160 is a component used to disperse and guide the reactant gas. In some embodiments, the material of the flow divider 160 may be the same as that of the flow equalizer 150. In some embodiments, the flow divider 160 may be used to guide and divert the reactant gas entering the mixing chamber S2, avoiding turbulence at the first gas exchange port 111, which could lead to local enrichment.

[0086] In some embodiments, the diverter plate 160 can be connected to the support ring 120 and the first baffle 110 by means of bonding, snap-fitting, etc. Figure 1 As shown, the flow divider 160 is arranged inside the mixing chamber S2, and its outer wall is in contact with the inner wall of the mixing chamber S2.

[0087] Inclined surface 161 is the end face of the flow divider 160 used to guide and divide the reaction gas. In some embodiments, inclined surface 161 faces the flow equalization plate 150 to initially disperse and guide the reaction gas entering the mixing chamber S2, so that it can enter the deposition chamber S1 more smoothly through the flow equalization plate 150.

[0088] In some embodiments, there is an angle α between the inclined surface 161 and the flow equalization plate 150, and the angle α can range from 20° to 60°. In some embodiments, the angle α can also range from 20° to 50°. In some embodiments, the angle α can also range from 30° to 45°. For example, α = 40°.

[0089] In some embodiments of the present disclosure, a flow distribution plate is arranged, and the flow distribution plate has an inclined surface. When the reaction gas enters the mixing chamber from the first gas exchange port, the inclined surface of the flow distribution plate can disperse the gas flow to both sides of the mixing chamber to form a uniform flow field, thereby avoiding the generation of local enrichment due to turbulent flow at the first gas exchange port, and ensuring the stability and consistency of the gas flow on both sides of the mixing chamber.

[0090] In some embodiments, as shown in FIG. 1, a plurality of second connecting portions 132 are arranged on the second baffle plate 130. The device 10 further comprises a connecting ring 170 arranged between the second baffle plate 130 and the first deposition member 140. The connecting ring 170 is connected to one of the plurality of second connecting portions 132 at one end along the axial direction of the connecting ring 170, and is connected to the first deposition member 140 at the other end along the axial direction of the connecting ring 170. Figures 3-4

[0091] In some embodiments, the second connecting portion 132 can be an annular groove or an annular protrusion with threads, and the plurality of second connecting portions 132 can be coaxially arranged on the second baffle plate 130 along the axial direction. Exemplary connection methods include clamping, threaded connection, etc. For more information about the second connecting portion, please refer to the relevant description in the foregoing.

[0092] The connecting ring 170 refers to a component for connecting the first deposition member 140 and the second connecting portion 132. The material of the connecting ring 170 is the same as that of the second baffle plate 130, such as graphite, etc.

[0093] In some embodiments, the structural shape of the connecting ring 170 can be determined according to the structural shape of the second baffle plate 130 and the first deposition member 140. For example, as shown in FIG. 1, when the end of the first deposition member 140 close to the connecting ring 170 is arranged as an annular groove, the end of the connecting ring 170 close to the first deposition member 140 can be arranged as an annular protrusion. When the end of the second connecting portion 132 on the second baffle plate 130 close to the connecting ring 170 is arranged as an annular groove, the end of the connecting ring 170 close to the second baffle plate 130 is arranged as an annular protrusion. The setting position of the annular protrusion and the setting position of the annular groove are opposite along the axial direction of the device. Figure 4

[0094] In some embodiments, as shown in FIG. 1, when the second baffle plate 130 is provided with a plurality of second connecting portions 132, and the second connecting portion 132 is a second annular groove 1321 with internal threads, the end of the connecting ring 170 along the axial direction is correspondingly provided with a second annular protrusion 171 with external threads. By screwing the second annular protrusion 170 of the connecting ring 170 with one of the second annular grooves 1321 of the plurality of second connecting portions 132, the connecting ring 170 can be connected to one of the plurality of second connecting portions 132. Figure 4 In some embodiments, as shown in FIG. 1, when the second baffle plate 130 is provided with a plurality of second connecting portions 132, and the second connecting portion 132 is a second annular groove 1321 with internal threads, the end of the connecting ring 170 along the axial direction is correspondingly provided with a second annular protrusion 171 with external threads. By screwing the second annular protrusion 170 of the connecting ring 170 with one of the second annular grooves 1321 of the plurality of second connecting portions 132, the connecting ring 170 can be connected to one of the plurality of second connecting portions 132. In some embodiments, as shown in FIG. 1, when the second baffle plate 130 is provided with a plurality of second connecting portions 132, and the second connecting portion 132 is a second annular groove 1321 with internal threads, the end of the connecting ring 170 along the axial direction is correspondingly provided with a second annular protrusion 171 with external threads. By screwing the second annular protrusion 170 of the connecting ring 170 with one of the second annular grooves 1321 of the plurality of second connecting portions 132, the connecting ring 170 can be connected to one of the plurality of second connecting portions 132.

[0095] In some embodiments, the other end of the connecting ring 170 along its axial direction can be connected to the first deposition member 140 in a similar manner as described above, which will not be repeated here.

[0096] In some embodiments of the present disclosure, by arranging the connecting ring to be connected to the second fitting part and the first deposition member, the airtightness of the deposition cavity can be ensured, and the connecting ring can be adjusted adaptively according to the structural shape of the first deposition member and the second baffle, for example, when the structural shapes of the two end surfaces of the plurality of first deposition sub-members constituting the first deposition member are different, the connecting ring is arranged, so that there is no need to design a new baffle structure, and the structural shapes of the first baffle and the second baffle are consistent, which is more conducive to production and promotion. Further, the second baffle is provided with a plurality of second fitting parts, and the plurality of second fitting parts can be used to install first deposition members of different diameter specifications, thereby enhancing the flexibility of the device to meet the deposition needs of various workpieces.

[0097] In some embodiments, the device 10 further comprises a filling ring (not shown in the figure), which can be used to fill the remaining second fitting parts 132 when one of the plurality of second fitting parts 132 is connected to the connecting ring 170.

[0098] The filling ring refers to a ring-shaped member used to fill the second fitting part 132. The material of the filling ring can include graphite or other materials that can fill the second fitting part 132, etc. In some embodiments, when the second fitting part 132 is a second annular groove 1321, the filling ring can be arranged in the vacant second annular groove 1321 to make the surface of the second baffle 130 as flat as possible to enhance the stability of the gas flow transport process.

[0099] It should be noted that whether the second fitting part 132 is provided with a filling ring can be determined according to actual conditions. For example, when the second fitting part 132 is not an annular groove, the filling ring does not need to be arranged.

[0100] In some embodiments of the present disclosure, by arranging the filling ring in the vacant second annular groove to make the surface of the second baffle as flat as possible, the accumulation of gas flow on the inner surface of the second baffle is avoided, the stability and smoothness of the gas flow transport process are enhanced, thereby facilitating the formation of a more uniform deposition surface and improving the deposition quality.

[0101] In some embodiments, as shown in Figure 1 The device 10 further comprises at least two groups of first heating assemblies 180, which are arranged at least partially outside the first deposition member 140 along the axial direction of the first deposition member 140. The at least two groups of first heating assemblies 180 can be controlled independently to perform zoned heating on the first deposition member 140.

[0102] The first heating assembly 180 refers to an assembly for adjusting the temperature in the deposition cavity S1. An exemplary first heating assembly 180 can include a heating rod, a heating coil, etc.

[0103] In some embodiments, the number of the first heating assembly 180 is not limited and can include two or more groups. As shown, the device 10 includes two groups of first heating assemblies 180, which are sequentially arranged along the device axis outside the first baffle 110, the support ring 120, and the first deposition piece 140. Each group of first heating assemblies 180 can have the same or different heating areas. For example, one group of the two groups of first heating assemblies 180 can be arranged around the first deposition piece 140 outside the first deposition piece 140, and the other group can be arranged around the first baffle 110 and the support ring 120 outside the first deposition piece 140 (or the device 10). Figure 1

[0104] In some embodiments, the first heating assembly 180 can be arranged outside the device 10 in various ways. For example, the first heating assembly 180 is a heating coil, which can be directly arranged on the outer wall of the device 10, etc.

[0105] In some embodiments, the number and arrangement of the first heating assembly 180 can be set according to actual needs. For example, at least two groups of first heating assemblies 180 can be arranged outside the first deposition piece 140 to obtain the first deposition piece 140 with different deposition thicknesses.

[0106] In some embodiments, the technician can control the heating power of the first heating assembly 180 in different regions outside the first deposition piece 140 to perform zoned heating of the first deposition piece 140, so as to achieve accurate adjustment and gradient distribution of the coating thickness. The heating power of each group of first heating assemblies 180 can be the same or different, which can be set according to actual needs.

[0107] ​For example, the technician or the control system of device 10 can control a set of first heating components 180 to maintain a higher temperature at one end of the deposition chamber S1, making the gas movement in that area more intense and the reaction rate of the reacting gas faster, thereby achieving a faster deposition rate and forming a thicker coating. Simultaneously, the technician or the control system of device 10 can control another set of first heating components 180 to maintain a lower temperature at the other end of the deposition chamber S1, making the gas movement rate in that area lower and the reaction rate of the reacting gas slower, thereby achieving a slower deposition rate and forming a thinner coating. Understandably, by gradually reducing the heating power of at least two sets of first heating components 180 from the bottom to the top of the deposition chamber, a gradient distribution of coating thickness, with the coating thickness gradually decreasing from the bottom to the top of the deposition chamber, can be achieved.

[0108] In some embodiments of this specification, since the reaction rate and deposition rate of the reactant gas and the elements on the surface of the deposited part are closely related to the ambient temperature, by setting at least two sets of first heating components that can be controlled independently outside the device, the first part to be deposited can be heated in sections, thereby forming different temperature gradients in the deposition chamber, thus achieving different deposition requirements. At the same time, it also improves the material utilization rate of the device, reduces material consumption and deposition time, and saves production costs.

[0109] In some embodiments, such as Figure 1 As shown, the device 10 also includes a support column 190, which is disposed in the center of the flow equalization plate 150. One end of the support column 190 is located in the deposition chamber S1, and the other end of the support column 190 is located in the mixing chamber S2, with the end face located in the mixing chamber S2 being arc-shaped. Multiple support rods 191 are arranged along the axial direction of the support column 190, and the support rods 191 are configured to hold the second object to be deposited 20.

[0110] The support column 190 refers to the component that supports, fixes, and stabilizes the deposition chamber S1. The support column 190 can be designed in various structural shapes. For example, the support column 190 can be a cylindrical structure, etc. In some embodiments, the material of the support column 190 may include graphite, or other materials with excellent high-temperature resistance and chemical corrosion resistance.

[0111] In some embodiments, the support column 190 is located at the center of the flow equalization plate 150 to support the first deposition object 140 and cooperates with other components (such as the first baffle, the second baffle, and the connecting ring) to form a stable cavity structure. It should be understood that the structural dimensions of the support column 190 can be determined according to the structural dimensions of the deposition cavity S1 and the coating deposition requirements.

[0112] In some embodiments, one end of the support column 190 is located in the deposition cavity S1 and can be used to set the support rod 191 and support the second workpiece 20 to be deposited; the other end of the support column 190 extends through the flow uniforming plate 150 into the mixing cavity S2, and the end face located in the mixing cavity S2 is in the shape of a circular arc. As shown in Figure 1 the first gas exchange port 111, so that when the reaction gas enters the mixing cavity S2 through the first gas exchange port 111, the circular arc-shaped end face can guide and distribute the gas, so that the gas can flow smoothly to the flow uniforming plate 150, while reducing the resistance of the gas flow through the flow uniforming plate 150, avoiding the formation of turbulence or gas stagnation area near the support column 190, and thus optimizing the state of the gas entering the deposition cavity S1.

[0113] In some embodiments, the side wall of the support column 190 is provided with a plurality of support rods 191 distributed in the same interval in the axial direction, for placing a plurality of second workpieces 20 to be deposited.

[0114] The support rod 191 refers to a component for placing the second workpiece 20 to be deposited. The material of the support rod 191 is the same as that of the support column 190, including but not limited to graphite and the like. In some embodiments, one end of the support rod 191 close to the support column 190 can be designed in the shape of a cylinder, a rod, or the like, and the other end of the support rod 191 away from the support column 190 can be designed in the shape of a ring (the cross section is circular or rectangular, etc.), so as to provide a stable contact surface for the second workpiece 20 to be deposited, so as to better support the second workpiece 20 to be deposited. In some embodiments, the other end of the support rod 191 away from the support column 190 can also be designed in the shape of a cross or Y.

[0115] In some embodiments, the support rod 191 can be fixed on the support column 190 in various ways. For example, the exemplary fixing methods include but are not limited to bonding, sleeving, etc.

[0116] The second workpiece 20 to be deposited refers to another workpiece that needs to be deposited with a compound coating in the CVD process. The material of the second workpiece 20 to be deposited is not limited and can be the same as or different from that of the first workpiece 140 to be deposited. In some embodiments, the second workpiece 20 to be deposited can be a graphite ring or the like.

[0117] In some embodiments of the present disclosure, by setting the support column and designing the end face located in the mixing cavity in the shape of a circular arc, the gas entering the mixing cavity can be further guided and distributed, so that the gas can flow smoothly to the flow uniforming plate, while reducing the resistance of the gas flow through the flow uniforming plate, avoiding the formation of turbulence or gas stagnation area near the support column, and thus optimizing the state of the gas entering the deposition cavity. Meanwhile, a plurality of support rods can be arranged along the axial direction of the end of the support column located in the deposition cavity, which can be used to simultaneously deposit a plurality of second workpieces, thereby improving the practicability of the device.

[0118] Figure 5 This is a structural schematic diagram of the support rod and the second deposition piece shown in some embodiments of this specification.

[0119] In some embodiments, such as Figure 5 As shown, multiple support rods 191 are radially extendable along the support column 190. Each support rod 191 is provided with a support member 1911 for supporting the second deposition piece 20. A positioning groove 192 is provided at the end of each support rod 191 away from the support column 190, and the height of the positioning groove 192 is greater than the height of the support member 1911.

[0120] In some embodiments, the radial telescopicity of the plurality of support rods 191 along the support column 190 can be achieved through various structural forms. For example, the support rods 191 can be telescopic rods that extend and retract relative to the outer tube by locking and unlocking through a locking mechanism. The radial telescopicity of the plurality of support rods 191 along the support column 190 allows the support rods 191 to adapt to the structural requirements of the deposition chamber S1, and also allows for the provision of second deposited parts 20 of different sizes to meet various needs.

[0121] The support member 1911 is a component of the support rod 191 used to support the second part to be deposited 20. In some embodiments, the support member 1911 may be designed as an arc-shaped protrusion so as to provide stable support for the second part to be deposited 20 while reducing the contact area with the second part to be deposited 20, ensuring the deposition area of ​​the second part to be deposited 20, and achieving full coverage of the coating on the second part to be deposited 20 as much as possible.

[0122] The positioning slot 192 is a component used by the support rod 191 to constrain the placement position of the second part to be deposited 20. In some embodiments, the positioning slot 192 can be designed in various structural shapes such as rod-shaped or block-shaped.

[0123] In some embodiments, the positioning slot 192 may be disposed at the top end of the support rod 191 away from the support column 190 to constrain the placement position of the second deposition piece 20. To prevent the second deposition piece 20 from shifting, tilting, or slipping on the support member 1911, the height of the positioning slot 192 is greater than the height of the support member 1911.

[0124] It should be understood that the height of the support 1911 and the positioning slot 192 can be set by technicians based on requirements, ensuring that the height of the support 1911 is lower than the height of the positioning slot 192.

[0125] It should be noted that the structural shape and the setting position of the support 1911 on the plurality of support rods 191 and the positioning clamping groove 192 correspond in the axial direction of the support column 190 to ensure that the profile of the second to-be-deposited member 20 placed on the support 1911 is a straight line in the axial direction of the support column 190, avoiding affecting the airflow in the deposition cavity S1, thereby ensuring the coating quality of the to-be-deposited member.

[0126] In some embodiments of the present specification, by setting the support on the plurality of support rods, a certain distance can be left between the second to-be-deposited member and the support rod, ensuring that the coating can cover the bottom of the second to-be-deposited member, while avoiding the coating deposition blind area caused by the large contact surface of the support rod, improving the integrity and uniformity of the coating. In addition, by setting the height of the support lower than the positioning clamping groove, on the one hand, it can prevent the second to-be-deposited member from shifting or tilting during the deposition process, and on the other hand, it can reduce the interference of the positioning clamping groove on the coating deposition process, to further improve the uniformity and quality of the coating thickness.

[0127] In some embodiments, the distance between the two adjacent support rods 191 in the plurality of support rods 191 is 10mm-100mm. In some embodiments, the distance between the two adjacent support rods 191 in the plurality of support rods 191 can also be 10mm-80mm. In some embodiments, the distance between the two adjacent support rods 191 in the plurality of support rods 191 can also be 40mm-60mm. For example, 50mm.

[0128] In some embodiments of the present specification, if the distance between the two adjacent support rods in the plurality of support rods is too small, the airflow is easily hindered, resulting in turbulent flow or flow dead angle around the support rod; if the distance is too large, the airflow is not evenly distributed, which will cause the gas concentration to be too high or too low, thereby affecting the consistency of the coating. By reasonably distributing the distance between the adjacent support rods, the airflow can uniformly pass through the space between the plurality of support rods, which can effectively ensure that each part of the second to-be-deposited member is subjected to uniform gas flow, thereby improving the coating quality.

[0129] Figure 6 is a structural schematic diagram of the device according to another embodiment of the present specification.

[0130] In some embodiments, as shown in Figure 6 The device 10 also includes a second heating assembly 200, which is arranged inside the support column 190 and is configured to heat the support column 190.

[0131] The second heating assembly 200 refers to an assembly for heating the support column 190. For example, the second heating assembly 200 can include, but is not limited to, a heating coil, etc. In some embodiments, the device 10 includes at least one set of second heating assemblies 200, and the number of second heating assemblies 200 can be pre-set by a technician.

[0132] In some embodiments, as shown in FIG. 1, the support column 190 has a hollow structure, and the second heating assembly 200 can be arranged inside the support column 190. Figure 6

[0133] In some embodiments, the second heating assembly 200 can independently control the temperature, and a technician can adjust the local or overall temperature of the support column 190 according to the needs to control the temperature gradient of the gas in the deposition cavity S1.

[0134] In some embodiments of the present specification, the temperature stability of the support column directly affects the gas flow state in the mixing cavity and the deposition cavity. By arranging the second heating assembly inside the support column, the temperature of the support column can be accurately controlled, and the local temperature drop phenomenon caused by the contact between the gas flow and the cold surface can be avoided, thereby improving the stability of the reaction gas.

[0135] In some embodiments, as shown in FIG. 1, the device 10 further includes a heat insulation plate 210, which is at least partially located between the support column 190 and the first deposition member 140 to divide the deposition cavity S1 into a first deposition cavity S11 and a second deposition cavity S12. Figure 6

[0136] The heat insulation plate 210 is a component for heat insulation of the device 10. The material of the heat insulation plate 210 includes, but is not limited to, graphite felt, or other materials having the function of blocking heat transfer, etc.

[0137] In some embodiments, the heat insulation plate 210 is an annular component, and is at least partially arranged in the deposition cavity S1 between the support column 190 and the first deposition member 140 to divide the deposition cavity S1 into the first deposition cavity S11 and the second deposition cavity S12.

[0138] It should be noted that the number and arrangement of the heat insulation plate 210 are not limited, and can be determined according to the actual situation.

[0139] The first deposition cavity S11 refers to the portion of the deposition cavity S1 that is divided by the heat insulation plate 210 and located in the center of the deposition cavity S1. In some embodiments, the heat insulation plate 210 encloses the graphite column 180 and the second deposition member 20 in the first deposition cavity S11.

[0140] ​​The second deposition chamber S12 refers to the portion located outside the deposition chamber S1, separated by the heat insulation plate 210. In some embodiments, the support ring 120, the second baffle 130, the first deposition object 140, the flow equalization plate 150, the connecting ring 170, and the heat insulation plate 210 together enclose the second deposition chamber S12.

[0141] In some embodiments, the temperatures in the second deposition chamber S12 and the first deposition chamber S11 can be individually adjusted by the first heating component 180 and the second heating component 200, respectively, to meet different deposition requirements and improve the deposition efficiency and uniformity of the coating.

[0142] In some embodiments, such as Figure 6 As shown, when the heat insulation plate 210 is installed in the deposition chamber S1, at least two second air exchange ports 131 can be provided on the second baffle 130, and the second air exchange ports 131 are correspondingly provided with the first deposition chamber S11 and the second deposition chamber S12. For example, one second air exchange port 131 is provided in the center of the second baffle 130 and communicates with the first deposition chamber S11; at least one second air exchange port 131 can be evenly distributed on the second baffle 130 corresponding to the second deposition chamber S12 and communicate with the second deposition chamber S12. By providing at least two second air exchange ports 131, the airflow in the first deposition chamber S11 and the second deposition chamber S12 can be independently regulated and discharged, avoiding mutual interference and heat exchange between the airflow in the first deposition chamber and the second deposition chamber, thereby enabling independent deposition of the first deposition object 140 and the second deposition object 20.

[0143] In some embodiments of this specification, by providing a heat insulation plate within the deposition chamber to divide it into a first deposition chamber and a second deposition chamber, heat exchange between the gases in the two chambers can be avoided. This reduces the impact on the second deposition piece when the first deposition piece is heated in sections using the first heating component, thus ensuring the deposition effect and quality for both types of deposition pieces. Furthermore, the two deposition chambers are temperature-controlled by independent heating components, enabling them to meet different deposition conditions and further improving the consistency and functionality of the coating.

[0144] In some embodiments, the minimum distance from the support rod 191 to the second adapter 132 is not less than 100mm-300mm. In some embodiments, the minimum distance from the support rod 191 to the second adapter 132 can also be not less than 100mm-200mm. In some embodiments, the minimum distance from the support rod 191 to the second adapter 132 can also be not less than 150mm-180mm. For example, 150mm. Further, by limiting the minimum distance from the support rod 191 to the second adapter 132 to be within the preferred range, the impact of the zoned heating on the second deposition object 20 placed on the support rod 191 can also be reduced, so as to further ensure the deposition effect and deposition quality of the second deposition object.

[0145] In addition, some features, structures, or characteristics in one or more embodiments of the present specification can be appropriately combined.

[0146] Some embodiments use numbers to describe quantities of ingredients, attributes, etc. It should be understood that such numbers used in the description of embodiments are, in some examples, modified by the adjectives "about", "approximately", or "substantially". Unless otherwise stated, "about", "approximately", or "substantially" indicate that the described number can vary ±20%. Accordingly, numerical parameters in the specification and claims are approximations, and unless otherwise indicated, can vary depending upon the desired properties sought to be obtained by the particular embodiments. In some embodiments, numerical parameters are approximations and can vary depending on the desired properties set forth in the specification and / or claims. In some embodiments, numerical parameters should be considered in the context of the number of significant digits used for measurement and the error demonstrated by the number of significant digits. Notwithstanding that the numerical ranges and parameters setting forth the broad scope of equivalence in some embodiments of the specification are approximations, the numerical values set forth in specific embodiments are reported as precisely as possible. The application is not limited to the specific numerical values set forth in the specification.

[0147] Each patent, patent application, patent publication, and other material, such as articles, books, specifications, publications, documents, etc., cited in this specification is hereby incorporated by reference in its entirety for all purposes. Application history documents that are inconsistent or contrary to the present specification, except for those of the present application, are excluded from this incorporation by reference. Limitations of the claims of this specification are not limited to, but are in addition to, those found in the application history documents (current or additional documents attached to this specification). It is specifically intended that the description, definitions, and / or terminology used in the application history documents are incorporated by reference into this specification in the event of an inconsistency with respect to the specification.

Claims

1. An apparatus for use in a chemical vapor deposition process for one or more substrates, characterized in that, The device includes: A first baffle, wherein a first air vent is provided on the first baffle; A support ring, wherein a first end face of the support ring along its axial direction is connected to the first baffle, and a second end face of the support ring along its axial direction can be mated with a first depositing part through a first mating portion; The second baffle has a second air vent and can be connected to the first deposition piece via a second mating part. When the first object to be deposited is simultaneously engaged with the support ring and the second baffle, the first baffle, the support ring, the first object to be deposited, and the second baffle together enclose the deposition cavity, and the surface of the first object to be deposited forms part of the inner wall of the deposition cavity.

2. The apparatus as claimed in claim 1, characterized in that, The inner wall of the support ring is provided with a flow equalization plate, and the flow equalization plate is provided with a plurality of flow equalization holes along its axial direction.

3. The apparatus as described in claim 2, characterized in that, The ratio of the total cross-sectional area of ​​the plurality of flow equalization holes to the cross-sectional area of ​​the flow equalization plate is in the range of 0.2 to 0.5; the cross-section is perpendicular to the axial direction of the flow equalization plate.

4. The apparatus as described in claim 2 or 3, characterized in that, The device further includes a flow divider plate, which is located between the first baffle and the support ring, and is connected to the support ring and the first baffle. The surface of the flow divider plate located inside the mixing chamber is an inclined surface, which faces the flow equalization plate, and there is an angle between the inclined surface and the flow equalization plate, the angle being in the range of 20° to 60°.

5. The apparatus as claimed in claim 1, characterized in that, The second baffle is provided with a plurality of second mating parts; The device further includes a connecting ring disposed between the second baffle and the first deposition element. One end of the connecting ring along its axial direction is connected to one of the plurality of second mating parts, and the other end of the connecting ring along its axial direction is connected to the first deposition element.

6. The apparatus as claimed in claim 1, characterized in that, The device further includes at least two sets of first heating components, which are at least partially arranged around the outside of the first object to be deposited along the axial direction of the first object to be deposited. The at least two sets of first heating components can be controlled independently for zoned heating of the first deposition piece.

7. The apparatus as claimed in claim 1, characterized in that, The device further includes a support column, which is disposed in the center of the flow equalization plate. One end of the support column is located in the deposition chamber, and the other end of the support column is located in the mixing chamber. The end face located in the mixing chamber is arc-shaped. The support column is provided with a plurality of support rods along its axial direction, and the support rods are configured to hold the second object to be deposited.

8. The apparatus as claimed in claim 7, characterized in that, The plurality of support rods are retractable along the radial direction of the support column; the plurality of support rods are provided with support members for supporting the second deposition piece, and the end of the plurality of support rods away from the support column is provided with a positioning groove, and the height of the positioning groove is greater than the height of the support member.

9. The apparatus as claimed in claim 8, characterized in that, The distance between two adjacent support rods in the plurality of support rods is 10mm to 100mm.

10. The apparatus as claimed in claim 7, characterized in that, The device further includes a second heating component disposed inside the support column and configured to heat the support column.

11. The apparatus as claimed in claim 10, characterized in that, The device further includes a heat insulation plate, which is at least partially located between the support column and the first deposition piece to divide the deposition chamber into a first deposition chamber and a second deposition chamber.

12. The apparatus as claimed in claim 10, characterized in that, The minimum distance from the support rod to the second mating part is not less than 100mm to 300mm.

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