Pulse-width-adjustable large-energy 755nm laser

Abstract

The utility model discloses a pulse width adjustable macro-energy 755nm laser, which realizes macro-energy laser output through regenerative amplification based on a semiconductor laser seed source, and the pulse width of a semiconductor laser can be controlled to be debugged from ten picoseconds to milliseconds through a power supply. Therefore, the system provided by the utility model can realize large-energy laser output with the pulse width of 10 picoseconds to milliseconds, the output energy can reach 10 millijoule to 10 joule, and the larger the pulse width is, the larger the output energy is; the device specifically comprises a 755nm semiconductor laser, a photoelectric detector, a xenon lamp pumping emerald cavity, a polarizer A, a 1 / 2 slide, a Faraday rotator, a Pockels cell, a 1 / 4 slide, a total reflective mirror A, a birefringence tuning device and a total reflective mirror B, the laser further comprises a regenerative amplification system, the regenerative amplification system is located in a light path of the 755nm semiconductor laser, and the regenerative amplification system comprises a polarizer B, a birefringence tuning device, a xenon lamp pump emerald cavity and a total reflection mirror B.

Description

TECHNICAL FIELD

[0001] The utility model relates to a laser technology field especially relates to a pulse width adjustable big energy 755nm laser. BACKGROUND

[0002] Pulse laser refers to single laser pulse width less than 0 and 25 seconds, and the light is emitted once every interval time laser This laser has greater output power, is very suitable for laser marking, cutting, ranging etc. Pulse laser wavelength range covers ultraviolet, visible light and infrared three wavelength sections, according to the different wavelength range, pulse laser can be further subdivided into ultraviolet pulse laser, visible light pulse laser and infrared pulse laser.

[0003] The wavelength range of ultraviolet pulse laser is 157-400 nanometers, and it is mainly applied to the fields such as photoetching, micro-nano processing, plasma etc.

[0004] The wavelength range of visible light pulse laser is 400-750 nanometers, and it is mainly applied to the fields such as orbit detection, medical imaging, photochemical reaction etc.

[0005] The wavelength range of infrared pulse laser is 700-1100 nanometers and 1100-2000 nanometers, and it is mainly used in the fields such as laser radar Q, remote sensing, medical treatment etc.

[0006] At present, pulse laser can be divided into various types according to the different pulse width, for example nanosecond, picosecond, femtosecond pulse laser etc., but most are single pulse width use, for this, we propose a pulse width adjustable big energy 755nm laser to solve the above problems. UTILITY MODEL CONTENT

[0007] The utility model aims at solving the shortcomings in prior art proposed in the background art, and proposes a pulse width adjustable big energy 755nm laser.

[0008] In order to realize the above-mentioned purpose, the utility model adopts the following technical scheme:

[0009] A pulse width adjustable big energy 755nm laser, including 755nm semiconductor laser, photoelectric detector and xenon lamp pumped alexandrite cavity, still including biasing device A, 1 / 2 glass, faraday rotator, pockels cell, 1 / 4 glass, full reflection mirror A, birefringent tuning device and full reflection mirror B;

[0010] Still including regenerative amplification system, and the regenerative amplification system is located in the light path of 755nm semiconductor laser, and the regenerative amplification system includes biasing device B, birefringent tuning device, xenon lamp pumped alexandrite cavity and full reflection mirror B;

[0011] The light emission direction of the 755nm semiconductor laser has a polarizer A, and the reflection route of the polarizer A has a 1 / 2 glass sheet, a Faraday rotator and a polarizer B, one light route of the polarizer B has a Pockels cell, a 1 / 4 glass sheet, a total reflection mirror A and a photoelectric detector, and the other light route of the polarizer B has a birefringent tuning device, a xenon lamp pumped alexandrite cavity and a total reflection mirror B.

[0012] Preferably, the 1 / 2 glass sheet, the Faraday rotator and the polarizer B are sequentially arranged on the light route reflection route of the polarizer A.

[0013] Preferably, the total reflection mirror B is arranged at one end of the light emission route of the xenon lamp pumped alexandrite cavity, and the birefringent tuning device is arranged at the other end of the light emission route of the xenon lamp pumped alexandrite cavity.

[0014] Preferably, the light emission route of the birefringent tuning device is reflected through the polarizer B.

[0015] Preferably, the light reflection route of the polarizer B sequentially has the Pockels cell, the 1 / 4 glass sheet, the total reflection mirror A and the photoelectric detector.

[0016] Preferably, the xenon lamp pumped alexandrite cavity and the birefringent tuning device are sequentially arranged on the reflected light route of the total reflection mirror B.

[0017] Compared with the prior art, the 755nm laser with adjustable pulse width and large energy has the following beneficial effects:

[0018] The 755nm laser with adjustable pulse width and large energy is disclosed in the utility model, which is based on a semiconductor laser seed source and realizes large energy laser output through regenerative amplification. BRIEF DESCRIPTION OF DRAWINGS

[0019] Figure 1 The utility model provides a kind of light path diagram of the 755nm laser with adjustable pulse width and large energy.

[0020] In the drawing: 1, 755nm semiconductor laser;2, polarizer A;3, 1 / 2 glass sheet;4, Faraday rotator;5, polarizer B;6, Pockels cell;7, 1 / 4 glass sheet;8, total reflection mirror A;9, photoelectric detector;10, birefringent tuning device;11, xenon lamp pumped alexandrite cavity;12, total reflection mirror B. DETAILED DESCRIPTION

[0021] In the description of the utility model, it is necessary to understand that the orientation or positional relation indicated by the terms "center", "longitudinal", "lateral", "length", "width", "thickness", "upper", "lower", "front", "rear", "left", "right", "vertical", "horizontal", "top", "bottom", "inner", "outer", "clockwise", "counterclockwise" and the like is the orientation or positional relation based on the orientation or positional relation shown in the drawings, and is only for the convenience of describing the utility model and simplifying the description, and therefore cannot be understood as a limitation on the utility model that the indicated device or element must have a particular orientation, be constructed and operated in a particular orientation, and therefore cannot be understood as a limitation on the utility model.

[0022] In the description of the utility model, the meaning of "multiple" is two or more than two, unless otherwise explicitly specified and limited.

[0023] In the description of the utility model, it should be noted that, unless otherwise explicitly specified and limited, the terms "mounting", "provided with", "sleeved / connected", "connected" and the like should be understood in a broad sense, for example, "connected" can be fixedly connected, can be detachably connected, or integrally connected; can be mechanically connected, can be electrically connected; can be directly connected, can be indirectly connected through an intermediate medium, and can be connected inside two elements. For ordinary skilled persons in the art, the specific meaning of the above terms in the utility model can be understood according to the specific circumstances.

[0024] The technical solutions in the embodiments of the utility model will be clearly and completely described below with reference to the drawings in the embodiments of the utility model. Obviously, the described embodiments are only part of the embodiments of the utility model, rather than all the embodiments.

[0025] Referring to Figure 1 A pulse width adjustable large energy 755nm laser, including 755nm semiconductor laser 1, photodetector 9, xenon lamp pumped alexandrite cavity 11, polarizer A2, 1 / 2 glass 3, Faraday rotator 4, Pockels cell 6, 1 / 4 glass 7, total reflection mirror A8, birefringent tuning device 10 and total reflection mirror B12;

[0026] Further comprising a regenerative amplification system, the regenerative amplification system is located in the optical path of the 755nm semiconductor laser 1, and the regenerative amplification system comprises a polarizer B5, a birefringent tuning device 10, a xenon lamp pumped alexandrite cavity 11 and a total reflection mirror B12;

[0027] Specifically: the 755nm semiconductor laser, the output pulse width is adjustable from ten picoseconds to millisecond level, which is realized by adjusting the voltage drive signal pulse width. The greater the pulse width, the greater the output energy, for example, a typical parameter: output pulse width: 50ps, energy is 1pJ;

[0028] The light emission direction of the 755nm semiconductor laser 1 has a polarizer A2, and the reflection route of the polarizer A2 has a 1 / 2 glass 3, a Faraday rotator 4 and a polarizer B5, the 1 / 2 glass 3, the Faraday rotator 4 and the polarizer B5 are sequentially located on the light path reflection route of the polarizer A2, and the light reflection route of the polarizer B5 sequentially has a Pockels cell 6, a 1 / 4 glass 7, a total reflection mirror A8 and a photodetector 9, and the other light path route of the polarizer B5 has a birefringent tuning device 10, a xenon lamp pumped alexandrite cavity 11 and a total reflection mirror B12, the total reflection mirror B12 is located at one end of the light emission route of the xenon lamp pumped alexandrite cavity 11, the birefringent tuning device 10 is located at the other end of the light emission route of the xenon lamp pumped alexandrite cavity 11, the light emission route of the birefringent tuning device 10 is reflected through the polarizer B5, and the xenon lamp pumped alexandrite cavity 11 and the birefringent tuning device 10 are sequentially located on the reflected light path of the total reflection mirror B12.

[0029] Working process:

[0030] The output polarization direction of the 755nm semiconductor laser 1 is controlled to be s-polarized light, the output is reflected through the polarizer A2, becomes p-polarized light through the 1 / 2 glass 3 and the Faraday rotator 4, enters the regenerative amplification system through the polarizer B5, specifically through the polarizer B5, the birefringent tuning device 10, the xenon lamp pumped alexandrite cavity 11 and the total reflection mirror B12, the xenon lamp pumped alexandrite cavity 11 is adjusted to output the maximum 755nm, the amplified laser passes through the polarizer B5, exits, outputs p-polarized light, passes through the Faraday rotator 4 and the polarizer A2 again, is still p-polarized light, and transmits through the polarizer A2 to output the required laser.

[0031] In the pulse width adjustable large energy 755nm laser, the following needs attention:

[0032] The output pulse width is determined by the 755nm semiconductor laser 1, the pulse width of the 755nm semiconductor laser 1 can be realized by adjusting the power supply pulse width, and the pulse width range is ten picoseconds to milliseconds;

[0033] Not limited to 755nm output, the regenerative amplification system can adjust the optimal amplification wavelength by adjusting the birefringent tuning device 10, and the 755nm semiconductor laser 1 can also adjust the output wavelength to a certain extent by controlling the temperature and other parameters, so the system has a certain wavelength adjustment range;

[0034] The system is not limited to 755nm, and is also applicable to other wavelengths, for example, the 755nm semiconductor laser 1 is replaced by a 1064nm semiconductor laser, the xenon lamp pumped alexandrite cavity 11 is replaced by a xenon lamp pumped Nd:YAG, and other devices are replaced by devices suitable for 1064nm, and the system can also generate a pulse width adjustable large energy output of ten picoseconds to milliseconds;

[0035] The laser output pulse width of the scheme is continuously adjustable in the range of ten picoseconds to millisecond, and meanwhile, large energy of ten millijoule to ten joule is ensured.

[0036] The above embodiment is the preferred embodiment of the present application, but the embodiment of the present application is not limited by the above embodiment, and any change, modification, replacement, combination, simplification made without departing from the spirit and principle of the present application should be an equivalent replacement mode, which is included in the protection scope of the present application.

[0037] In the description of the present application, it should be understood that the terms indicating the position or location relationship are based on the position or location relationship shown in the drawings, and are only for the convenience of describing the present application and simplifying the description, and do not indicate or imply that the devices or elements indicated must have a specific position, be constructed and operated in a specific position, and therefore cannot be understood as a limitation on the present application.

Claims

1. A pulse width adjustable high energy 755 nm laser, comprising a 755 nm semiconductor laser (1), a photodetector (9) and a xeon lamp pumped alexandrite cavity (11), characterized in that, It also includes polarizer A (2), 1 / 2 glass (3), Faraday rotator (4), Pockels cell 6, 1 / 4 glass (7), full mirror A (8), birefringent tuning device (10) and full mirror B (12); It also includes a regenerative amplification system, the regenerative amplification system is located in the light path of the 755nm semiconductor laser (1), the regenerative amplification system includes polarizer B (5), birefringent tuning device (10), xenon lamp pumped alexandrite cavity (11) and full mirror B (12); The light emitting direction of the 755nm semiconductor laser (1) has a polarizer A (2), and the reflection route of the polarizer A (2) has a 1 / 2 glass (3), a Faraday rotator (4) and a polarizer B (5), one light path of the polarizer B (5) has a Pockels cell (6), a 1 / 4 glass (7), a full mirror A (8) and a photodetector (9), another light path of the polarizer B (5) has a birefringent tuning device (10), a xenon lamp pumped alexandrite cavity (11) and a full mirror B (12).

2. The pulse width adjustable high energy 755 nm laser according to claim 1, wherein, The 1 / 2 glass (3), the Faraday rotator (4) and the polarizer B (5) are sequentially located in the light path reflection route of the polarizer A (2).

3. The pulse width adjustable high energy 755 nm laser of claim 1, wherein, The full mirror B (12) is located at one end of the light emitting route of the xenon lamp pumped alexandrite cavity (11), and the birefringent tuning device (10) is located at the other end of the light emitting route of the xenon lamp pumped alexandrite cavity (11).

4. The pulse width adjustable high energy 755 nm laser of claim 1, wherein, The light emitting route of the birefringent tuning device (10) is reflected through the polarizer B (5).

5. The pulse width adjustable high energy 755 nm laser of claim 1, wherein, The light reflection route of the polarizer B (5) sequentially has a Pockels cell (6), a 1 / 4 glass (7), a full mirror A (8) and a photodetector (9).

6. The pulse width adjustable high energy 755 nm laser of claim 1, wherein, The xenon lamp pumped alexandrite cavity (11) and the birefringent tuning device (10) are sequentially located in the reflected light path of the full mirror B (12).

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