Ion implantation device

Abstract

The utility model relates to an ion implantation device. The ion implantation device comprises an ion source chamber used for generating plasma; the cooling pipe is used for transmitting cooling fluid, at least part of the cooling pipe is located in the ion source chamber, the side wall, extending into the ion source chamber, of the cooling pipe is covered with a high-temperature-resistant side plate, and the melting point of the high-temperature-resistant side plate is higher than 400 DEG C. According to the utility model, the damage of high temperature formed in the plasma generation process of the ion source chamber to the high temperature resistant side plate is avoided, the pollution to the wafer in the ion implantation process is avoided, the smooth operation of the ion implantation process is ensured, and the service life of the cooling pipe and the ion implantation device is prolonged.

Description

Technical Field

[0001] This utility model relates to the field of semiconductor manufacturing technology, and in particular to an ion implantation device. Background Technology

[0002] Ion implantation devices ionize atoms or molecules to form plasma, which carries a certain electric charge. An internal electric field accelerates the plasma, and a magnetic field alters its direction of motion, controlling the plasma to enter the wafer at a specific energy and velocity for doping. Ion implantation devices typically include an ion source chamber for generating plasma and cooling tubes located inside the ion source chamber. The cooling tubes dissipate heat from the ion source chamber, preventing overheating. However, currently, the side plates of the cooling tubes in ion implantation devices are made of metal. The high temperature generated during plasma generation in the ion source chamber easily leads to melting or deformation of the metal side plates. Metal particles generated from melting side plates may enter the wafer with the plasma, causing wafer contamination. Deformation of the metal side plates affects the cooling effect of the cooling tubes and reduces their lifespan.

[0003] Therefore, how to solve the problem of cooling tubes easily melting or deforming, thereby avoiding contamination of the wafer, and at the same time improving the service life of the cooling tubes, is a technical problem that urgently needs to be solved. Summary of the Invention

[0004] This invention provides an ion implantation device to solve the problem of cooling tubes easily melting or deforming, thereby avoiding contamination of the wafer and improving the service life of the cooling tubes.

[0005] According to some embodiments, the present invention provides an ion implantation device, comprising:

[0006] Ion source chamber, used to generate plasma;

[0007] A cooling pipe for conveying cooling fluid, the cooling pipe being at least partially located within the ion source chamber, the sidewall of the cooling pipe extending into the ion source chamber being covered with a high-temperature resistant side plate having a melting point higher than 400°C.

[0008] In some embodiments, the high-temperature resistant side plate is a graphite side plate.

[0009] In some embodiments, the high-temperature resistant side plate is a single-layer plate; or,

[0010] The high-temperature resistant side plate comprises multiple high-temperature resistant sub-plates stacked sequentially, and the melting point of each of the high-temperature resistant sub-plates is higher than 400°C.

[0011] In some embodiments, a groove is provided on the sidewall of a portion of the cooling tube located within the ion source chamber, and a high-temperature resistant side plate covers the top surface of the groove and is connected to the sidewall of the cooling tube.

[0012] In some embodiments, the cooling pipe includes a pipe body and a cooling channel extending through the pipe body in a first direction, the cooling channel being used to transport the cooling fluid;

[0013] The groove extends into the interior of the cooling channel along a second direction, which intersects perpendicularly with the first direction.

[0014] In some embodiments, a reflective cathode is further included, the reflective cathode being located within the groove.

[0015] In some embodiments, the high-temperature resistant side plate at least covers a portion of the sidewall of the groove extending into the interior of the cooling channel.

[0016] In some embodiments, the thickness of the high-temperature resistant side plate is uniformly distributed.

[0017] In some embodiments, the high-temperature resistant side plate is rectangular in shape, and includes an inner region and corner regions distributed around the outer periphery of the inner region, wherein the thickness of the corner regions of the high-temperature resistant side plate is greater than the thickness of the inner region of the high-temperature resistant side plate.

[0018] The ion implantation device provided by this utility model avoids damage to the high temperature generated during plasma generation in the ion source chamber by setting a groove on the side wall of the cooling pipe used for transmitting cooling fluid and a high-temperature resistant side plate located on the side wall of the groove, wherein the melting point of the high-temperature resistant side plate is higher than 400°C. This prevents metal particles generated by the melting of the metal side plate from entering the wafer with the plasma, avoids contamination of the wafer during ion implantation, ensures the smooth progress of the ion implantation process, and extends the service life of the cooling pipe and the ion implantation device. Attached Figure Description

[0019] Figure 1 This is a cross-sectional schematic diagram of the ion implantation device in a specific embodiment of this utility model;

[0020] Figure 2 This is a schematic diagram of the external structure of the cooling pipe in a specific embodiment of this utility model;

[0021] Figure 3 This is a top view of the internal structure of the cooling pipe in a specific embodiment of this utility model;

[0022] Figure 4 This is a schematic diagram of the high-temperature resistant side plate in a specific embodiment of this utility model. Detailed Implementation

[0023] The specific embodiments of the ion implantation device provided by this utility model will be described in detail below with reference to the accompanying drawings.

[0024] This specific embodiment provides an ion implantation device. Figure 1 This is a cross-sectional schematic diagram of the ion implantation device in a specific embodiment of this utility model. Figure 2 This is a schematic diagram of the external structure of the cooling pipe in a specific embodiment of this utility model. Figure 3 This is a top view of the internal structure of the cooling pipe in a specific embodiment of this utility model. Figures 1-3 As shown, the ion implantation device includes:

[0025] Ion source chamber 10, used to generate plasma;

[0026] Cooling pipe 20 is used to transport cooling fluid. The cooling pipe 20 is at least partially located in the ion source chamber 10. The side wall of the cooling pipe 20 extending into the ion source chamber 10 is covered with a high-temperature resistant side plate 13, the melting point of which is higher than 400°C.

[0027] Specifically, the ion implantation device includes an ion source chamber 10 for generating plasma, an ion source structure 14 located at the end of the ion source chamber 10, and a cooling pipe 20 extending partially into the interior of the ion source chamber 10. The ion source structure includes a filament, a filament power supply, a cathode cap, and other structures for emitting thermionic electrons, thereby ionizing the gas within the ion source chamber 10 to form plasma. The cooling pipe 20 is used to circulate cooling fluids such as cooling water to cool the ion source chamber 10. During the plasma generation process in the ion source chamber 10, the temperature inside the ion source chamber 10 is relatively high, for example, between 300°C and 400°C. By covering the sidewall of the cooling pipe 20 extending into the ion source chamber 10 with a high-temperature resistant side plate 13, and ensuring that the melting point of the high-temperature resistant side plate 13 is higher than 400°C, damage to the high-temperature resistant side plate caused by the high temperature generated during plasma generation in the ion source chamber is avoided. This prevents impurity particles generated by the melting or deformation of the side plate from entering the wafer with the plasma, avoids wafer contamination during ion implantation, ensures the smooth progress of the ion implantation process, and extends the service life of the cooling pipe and the ion implantation device. The high-temperature resistant side plate 13 can be a single type of material or a combination of materials (i.e., a mixture of two or more materials), as long as the melting point of the high-temperature resistant side plate is higher than 400°C.

[0028] In some embodiments, the high-temperature resistant side plate 13 is a graphite side plate.

[0029] Specifically, a graphite side plate is used as the high-temperature resistant side plate 13. On the one hand, since the material of the graphite side plate is graphite, which has a high melting point, the high temperature generated during the plasma generation process in the ion source chamber is avoided from damaging the high-temperature resistant side plate, ensuring the smooth progress of the ion implantation process. On the other hand, the material of the graphite side plate is graphite, which contains almost no metal particles and has high purity, thus effectively preventing impurities in the graphite side plate from volatilizing at high temperatures and contaminating the wafer.

[0030] In some embodiments, the high-temperature resistant side plate 13 is a single-layer plate; or,

[0031] The high-temperature resistant side plate 13 includes a plurality of high-temperature resistant sub-plates stacked in sequence, and the melting point of each of the high-temperature resistant sub-plates is higher than 400°C.

[0032] In one example, the high-temperature resistant side plate 13 is a single-layer graphite side plate, which helps to simplify the manufacturing process of the high-temperature resistant side plate 13 and reduce the manufacturing cost of the ion implantation device.

[0033] In another example, the high-temperature resistant side plate 13 comprises a plurality of high-temperature resistant sub-plates stacked sequentially, and each of the high-temperature resistant sub-plates has a melting point higher than 400°C. This allows for flexible adjustment of the composition and melting point of the high-temperature resistant side plate 13 to meet the ion implantation requirements of specific temperatures or specific implantation conditions. For example, at least two of the plurality of high-temperature resistant sub-plates have different structures, and the outermost high-temperature resistant sub-plate in the stacked plurality of high-temperature resistant sub-plates is a graphite plate.

[0034] In some embodiments, a groove is provided on the side wall of a portion of the cooling pipe 20 located within the ion source chamber 10, and the high-temperature resistant side plate 13 covers the top surface of the groove and is connected to the side wall of the cooling pipe 20.

[0035] In some embodiments, the cooling pipe 20 includes a pipe body 11 and a cooling channel 12 extending through the pipe body 11 along a first direction D1, the cooling channel 12 being used to transport the cooling fluid;

[0036] The groove extends along the second direction D2 into the interior of the cooling channel 12, and the second direction D2 intersects the first direction D1 perpendicularly.

[0037] In some embodiments, the ion implantation apparatus further includes a reflective cathode located within the groove.

[0038] Specifically, such as Figure 3 As shown, the tube body 11 of the cooling tube 20 includes an inner wall 31 facing the cooling channel 12 and an outer wall 30 facing away from the cooling channel 12. For example, the cooling tube 20 includes a first portion extending into the interior of the ion source chamber 10 and a second portion located outside the ion source chamber 10. The first portion has a groove on its sidewall. The first portion extends along a first direction D1, and the groove extends through the sidewall of the first portion into the cooling channel 12 along a second direction. The groove does not penetrate the cooling tube 20 along the second direction to ensure that the cooling fluid can be smoothly transported within the cooling tube 20. In one example, the first direction D1 is the axial direction of the cooling tube 20, and the second direction D2 is the radial direction of the cooling tube 20. The groove is used to accommodate components such as a reflective cathode, thereby improving the space utilization inside the ion source chamber 10 and helping to reduce the size of the ion implantation device. The reflective cathode is used to emit thermionic electrons generated by the ion source structure to improve the ionization rate of the gas inside the ion source chamber 10.

[0039] In some embodiments, the high-temperature resistant side plate 13 at least covers a portion of the sidewall of the groove extending into the interior of the cooling channel 12.

[0040] Specifically, the high-temperature resistant side plate 13 not only covers the outer wall 30 of the tube body 11 to close the top opening of the groove, but also covers the side wall of the groove. For example, the part of the side wall 32 of the groove extending into the interior of the cooling channel 12 covers the high-temperature resistant side plate 13, thereby further improving the high-temperature resistance of the cooling tube 20.

[0041] In some embodiments, the thickness of the high-temperature resistant side plate 13 is uniformly distributed to simplify the manufacturing process of the high-temperature resistant side plate 13.

[0042] Figure 4 This is a schematic diagram of the high-temperature resistant side plate in a specific embodiment of this utility model, wherein, Figure 4 The area within the circular dashed circle is the corner area. In some embodiments, the high-temperature resistant side plate 13 is rectangular in shape, and the high-temperature resistant side plate 13 includes an inner area and corner areas distributed on the outer periphery of the inner area, and the thickness of the corner areas of the high-temperature resistant side plate 13 is greater than the thickness of the inner area of ​​the high-temperature resistant side plate 13.

[0043] Specifically, since the corner area of ​​the high-temperature resistant side plate 13 is more prone to melting or deformation due to high temperature, increasing the thickness of the corner area of ​​the high-temperature resistant side plate 13 helps to further enhance the overall high-temperature resistance of the high-temperature resistant side plate 13, thereby further ensuring the smooth progress of the ion implantation process and further extending the service life of the cooling pipe and the ion implantation device.

[0044] The ion implantation apparatus provided in this specific embodiment avoids damage to the high-temperature side plate caused by the high temperature generated during plasma generation in the ion source chamber by providing a groove on the side wall of the cooling pipe used for transmitting cooling fluid and a high-temperature resistant side plate located on the side wall of the groove, wherein the melting point of the high-temperature resistant side plate is higher than 400°C. This prevents metal particles generated by the melting of the metal side plate from entering the wafer with the plasma, avoids contamination of the wafer during ion implantation, ensures the smooth progress of the ion implantation process, and extends the service life of the cooling pipe and the ion implantation apparatus.

[0045] The above description is only a preferred embodiment of the present utility model. It should be noted that for those skilled in the art, several improvements and modifications can be made without departing from the principle of the present utility model, and these improvements and modifications should also be considered within the protection scope of the present utility model.

Claims

1. An ion implantation device, characterized in that, include: Ion source chamber, used to generate plasma; A cooling pipe for conveying cooling fluid, the cooling pipe being at least partially located within the ion source chamber, the sidewall of the cooling pipe extending into the ion source chamber being covered with a high-temperature resistant side plate having a melting point higher than 400°C.

2. The ion implantation apparatus according to claim 1, characterized in that, The high-temperature resistant side plate is a graphite side plate.

3. The ion implantation apparatus according to claim 1, characterized in that, The high-temperature resistant side panel is a single-layer panel; or... The high-temperature resistant side plate comprises multiple high-temperature resistant sub-plates stacked sequentially, and the melting point of each of the high-temperature resistant sub-plates is higher than 400°C.

4. The ion implantation apparatus according to claim 1, characterized in that, The cooling tube located within the ion source chamber has a groove on its side wall, and the high-temperature resistant side plate covers the top surface of the groove and is connected to the side wall of the cooling tube.

5. The ion implantation apparatus according to claim 4, characterized in that, The cooling pipe includes a pipe body and a cooling channel that extends through the pipe body in a first direction, the cooling channel being used to transport the cooling fluid; The groove extends into the interior of the cooling channel along a second direction, which intersects perpendicularly with the first direction.

6. The ion implantation apparatus according to claim 5, characterized in that, It also includes a reflective cathode, which is located within the groove.

7. The ion implantation apparatus according to claim 5, characterized in that, The high-temperature resistant side plate at least covers a portion of the sidewall of the groove extending into the interior of the cooling channel.

8. The ion implantation apparatus according to claim 1, characterized in that, The thickness of the high-temperature resistant side plate is uniformly distributed.

9. The ion implantation apparatus according to claim 1, characterized in that, The high-temperature resistant side plate is rectangular in shape, and includes an inner region and corner regions distributed around the outer periphery of the inner region. The thickness of the corner regions of the high-temperature resistant side plate is greater than the thickness of the inner region of the high-temperature resistant side plate.

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