Shutter device and molecular beam epitaxy equipment

Abstract

The utility model relates to a shutter device and molecular beam epitaxy equipment. Comprising a baffle plate configured to swing between a first position and a second position; when the baffle plate is in the first position, a beam injection track between the source furnace and the film growth area is blocked by the baffle plate, the baffle plate and the beam injection track are obliquely intersected, and a free falling body track formed at any position on the baffle plate is outside the source furnace; when the baffle is in the second position, the beam injection track between the source furnace and the thin film growth area does not intersect with the baffle, and the baffle is located below the source furnace; the first end of the support is connected with the baffle, and the second end extends away from the baffle; the bracket can swing to drive the baffle to swing between a first position and a second position; the power assembly is configured to drive the support to swing, and the power assembly is connected with the second end of the support. According to the technical scheme, blockage of the injection orifice of the source furnace can be reduced, and the film growth quality can be improved.

Description

Technical Field

[0001] This application relates to the field of semiconductor epitaxy technology, and in particular to a shutter device and a molecular beam epitaxy apparatus. Background Technology

[0002] Molecular beam epitaxy (MBE) is a research and production technology used to grow high-quality single-crystal thin films. In an MBE system, a single-crystal thin film is formed in a growth chamber. The growth chamber includes multiple source furnaces and a thin film growth region (i.e., the area where the wafer is placed) above the source furnaces. A beam of elemental molecules or atoms (hereinafter referred to as "beam") generated after the source furnaces are heated is ejected into the thin film growth region. To ensure uniform film thickness, the centers of the multiple beams converge at the same point in the thin film growth region, i.e., the center point of the region. Under conditions where the wafer is heated to a suitable temperature, physical reactions occur between the molecules / atoms contained within these beams, forming a single-crystal thin film. To ensure that the centers of the multiple beams converge at the same point, the beams ejected from each source furnace are set to be inclined at either a horizontal or vertical direction.

[0003] During thin film growth, each source furnace is equipped with a corresponding "shutter baffle" (hereinafter referred to as "shutter"). When the shutter is closed, it blocks the beam, while when it is open, it allows the beam to pass through. Through the control of the shutter, molecular beam epitaxy technology can precisely control the composition ratio of each single-crystal thin film.

[0004] However, in existing technologies, the "shutter baffle" is partially located directly above the source furnace. After a period of operation, the raw material comes into contact with and adheres to the shutter blades when the shutter closes. As the amount of material adhering to the shutter increases, it will fall due to its own gravity or the influence of shutter movement. This falling material may block the source furnace outlet or fall into the source furnace, disturbing the beam formed by the heated raw material inside, affecting film growth, and potentially causing defects in the finished film. Utility Model Content

[0005] In view of this, this application provides a shutter device and a molecular beam epitaxy apparatus to solve at least one problem existing in the prior art.

[0006] To achieve the above objectives, the technical solution of this application is implemented as follows:

[0007] In a first aspect, embodiments of this application provide a shutter device applied to a molecular beam epitaxy (MBE) apparatus. The MBE apparatus includes a growth chamber, a source furnace, a thin film growth region, and the shutter device. The thin film growth region is located obliquely above the source furnace. The shutter device includes:

[0008] A baffle is configured to swing between a first position and a second position. When the baffle is in the first position, the beam jet trajectory between the source furnace and the thin film growth region is blocked by the baffle, and the baffle intersects the beam jet trajectory at an angle. The free fall trajectory formed from any point on the baffle is outside the source furnace. When the baffle is in the second position, the beam jet trajectory between the source furnace and the thin film growth region does not intersect with the baffle, and the baffle is located below the source furnace.

[0009] The bracket has a first end connected to the baffle and a second end extending away from the baffle; the bracket is capable of swinging to cause the baffle to swing between a first position and a second position.

[0010] A power unit is configured to drive the swing of the support, and the power unit is connected to a second end of the support.

[0011] Optionally, the first position is above the second position, and the bracket can swing up and down.

[0012] Optionally, the side of the baffle facing the source furnace is an arc surface concave towards the source furnace.

[0013] Optionally, the radius of the arc surface is 200mm-400mm.

[0014] Optionally, when the baffle is in the first position, the angle between the baffle and the beam jet trajectory is 90°-140°, and the angle is the angle between the center line of the beam jet trajectory and the tangential plane of the baffle.

[0015] Optionally, the shutter device further includes a support base, which can swing up and down with the support base as a fulcrum; the support base is located outside the growth chamber.

[0016] Optionally, the length of the resistance arm of the support during oscillation is greater than the length of the power arm.

[0017] Optionally, the support includes a first support rod and a second support rod with different orientations, the second support rod being connected to the baffle; the second support rod is configured such that when the baffle is in a first position or a second position, the second support rod tilts downward from the end connected to the first support rod to the other end.

[0018] Optionally, the second support rod includes a collar that can be fitted onto the outside of the source furnace.

[0019] Optionally, the power assembly includes a power component and a drive rod. One end of the drive rod is connected to the power component, and the other end is connected to the bracket. The drive rod moves up and down under the drive of the power component to drive the bracket to swing up and down.

[0020] Optionally, the power component is an electric motor.

[0021] Optionally, the power assembly further includes a rotation conversion element, the two ends of which are respectively connected to the power assembly and the drive rod to convert the rotation of the motor into the movement of the drive rod.

[0022] Optionally, the rotation conversion component includes a drive plate, one end of which is provided with a lead screw nut, and the other end is connected to the drive rod; the axis of the lead screw nut is parallel to the movement trajectory of the drive rod, and the output shaft of the motor is connected to a lead screw that cooperates with the lead screw nut.

[0023] Optionally, the shutter device further includes a telescopic tube, which is sleeved on the drive rod and communicates with the growth chamber, so as to extend and retract along with the drive rod during its movement to maintain an external seal.

[0024] Optionally, the telescopic tube is a corrugated tube.

[0025] Optionally, the shutter device further includes a bracket sealing cover and a first sealing flange, the bracket sealing cover being in sealed communication with the growth chamber through the first sealing flange, and the portion of the bracket located outside the growth chamber being located inside the bracket sealing cover; the drive rod passes through the sealing cover and connects to the bracket.

[0026] Optionally, the shutter device further includes a second sealing flange, one end of which is sealed to the telescopic tube and the other end of which is sealed to the drive plate, so that the telescopic tube seals over the drive rod.

[0027] Optionally, the shutter device further includes a third sealing flange, one end of which is sealed to the bracket sealing cover, and the other end of which is sealed to the telescopic tube.

[0028] Secondly, embodiments of this application provide a molecular beam epitaxy apparatus, comprising:

[0029] The growth chamber has a growth cavity;

[0030] Source furnace, with the injection port located in the growth chamber;

[0031] A thin film growth region is located in the growth chamber and is located obliquely above the source furnace; the injection port faces the thin film growth region;

[0032] Any of the shutter devices described above.

[0033] Optionally, the molecular beam epitaxy apparatus further includes:

[0034] The first cold shield plate is located above the source furnace. The first cold shield plate extends upward and inclined from the inner wall of the growth chamber towards the center, and its projection on the horizontal plane covers the projection of the source furnace on the horizontal plane.

[0035] Optionally, the angle between the first cold shield plate and the horizontal plane is 5°-45°.

[0036] Optionally, the molecular beam epitaxy apparatus further includes:

[0037] The second cold shield plate is located on both sides of the source furnace in the horizontal direction, and the second cold shield plate seals against the first cold shield plate.

[0038] Optionally, the molecular beam epitaxy apparatus further includes:

[0039] The third cold shield plate is located in front of the injection port of the source furnace, and the third cold shield plate is sealed and abutted against the first cold shield plate and the second cold shield plate respectively; the third cold shield plate has a through hole in the middle for the beam of the source furnace to pass through, and the size of the through hole is adapted to the size of the baffle.

[0040] The shutter device and molecular beam epitaxy equipment provided in this application include: a baffle configured to swing between a first position and a second position; in the state where the baffle is in the first position, the beam jet trajectory between the source furnace and the thin film growth region is blocked by the baffle, and the baffle intersects the beam jet trajectory at an angle, and the free fall trajectory formed from any point on the baffle is outside the source furnace; in the state where the baffle is in the second position, the beam jet trajectory between the source furnace and the thin film growth region does not intersect with the baffle, and the baffle is located below the source furnace; a support, with a first end connected to the baffle and a second end extending away from the baffle; the support is capable of swinging motion to drive the baffle to swing between the first position and the second position; and a power component configured to drive the swinging of the support, the power component being connected to the second end of the support. As can be seen, the shutter device and molecular beam epitaxy apparatus of this application embodiment configure the baffle as follows: when the baffle is in the first position, the baffle intersects the beam jet trajectory at an angle, and the free fall trajectory formed from any point on the baffle is outside the source furnace; when the baffle is in the second position, the beam jet trajectory between the source furnace and the thin film growth region does not intersect the baffle, and the baffle is located below the source furnace. This prevents material adhering to the shutter from falling into the source furnace jet or into the source furnace, reducing clogging of the source furnace jet and improving the thin film growth quality. Therefore, the shutter device and molecular beam epitaxy apparatus of this application embodiment can reduce clogging of the source furnace jet and improve the thin film growth quality.

[0041] Additional aspects and advantages of this application will be set forth in part in the description which follows, and in part will be obvious from the description, or may be learned by practice of this application. Attached Figure Description

[0042] The accompanying drawings, which are included to provide a further understanding of this application and form part of this application, illustrate exemplary embodiments and are used to explain this application, but do not constitute an undue limitation of this application. In the drawings:

[0043] Figure 1 This is a schematic diagram of the molecular beam epitaxy apparatus provided in the embodiments of this application;

[0044] Figure 2 A schematic diagram of the shutter device provided in the embodiments of this application in a molecular beam epitaxy apparatus. Figure 1 (Off state);

[0045] Figure 3 A schematic diagram of the shutter device provided in the embodiments of this application in a molecular beam epitaxy apparatus. Figure 2 (On)

[0046] Figure 4 A schematic diagram of the shutter device provided in the embodiments of this application;

[0047] Figure 5 A schematic diagram of the bracket and baffle in the shutter device provided in the embodiments of this application;

[0048] Figure 6 A schematic diagram of the drive lever and drive plate in the shutter device provided in the embodiments of this application;

[0049] Figure 7 A schematic diagram of the telescopic tube and bracket sealing cover in the shutter device provided in the embodiments of this application;

[0050] Figure 8 A schematic diagram of the telescopic tube in the shutter device provided in the embodiments of this application;

[0051] Figure 9 A schematic diagram of the motor in the shutter device provided in the embodiments of this application;

[0052] Figure 10 for Figure 9 A cross-sectional view;

[0053] Figure 11 This is a cross-sectional schematic diagram of the growth chamber in the molecular beam epitaxy apparatus provided in the embodiments of this application.

[0054] Explanation of reference numerals in the attached figures:

[0055] 10. Growth Chamber; 20. Source Furnace; 30. Shutter Device; 31. Baffle; 32. Support; 321. First Support Rod; 322. Second Support Rod; 33. Power Components; 331. Motor; 3311. Motor Shaft; 3312. Coupling; 3313. Bearing; 332. Drive Rod; 3321. Pin; 333. Drive Plate; 334. Nut; 335. Lead Screw; 34. Support Base; 35. Telescopic Tube; 36. Support Sealing Cover; 371. First Sealing Flange; 372. Second Sealing Flange; 373. Third Sealing Flange; 40. Thin Film Growth Zone; 51. First Cold Screen Plate; 52. Second Cold Screen Plate; 53. Third Cold Screen Plate; 60. Beam Jet Trajectory. Detailed Implementation

[0056] To make the technical solution and beneficial effects of this application more apparent and understandable, a detailed description is provided below by listing specific embodiments. The accompanying drawings are not necessarily drawn to scale, and local features may be enlarged or reduced to more clearly show the details of the local features; unless otherwise defined, the technical and scientific terms used herein have the same meanings as those in the technical field to which this application pertains.

[0057] In the description of this application, the terms "center", "longitudinal", "lateral", "length", "width", "thickness", "height", "upper", "lower", "front", "rear", "left", "right", "vertical", "horizontal", "top", "bottom", "inner", "outer", "clockwise", "counterclockwise", etc., indicate the orientation or positional relationship based on the orientation or positional relationship shown in the accompanying drawings. They are only used for the purpose of simplifying the description of this application and do not indicate that the device or element referred to must have a specific orientation, or be constructed and operated in a specific orientation. In other words, they should not be construed as limitations on this application.

[0058] In this application, the terms "first" and "second" are used for descriptive purposes only and should not be construed as indicating the relative importance of the indicated features or the number of indicated technical features. Therefore, a feature specified as "first" or "second" may explicitly include at least one of those features. In the description of this application, "multiple" means at least two, such as two, three, etc.; "several" means at least one, such as one, two, three, etc., unless otherwise explicitly specified.

[0059] In this application, unless otherwise expressly defined, the terms "installation," "connection," "linking," "fixing," "setting," etc., should be interpreted broadly. For example, "connection" can be a fixed connection, a detachable connection, or an integral part; it can be a mechanical connection or an electrical connection; it can be a direct connection or an indirect connection through an intermediate medium; it can also refer to the internal communication of two components or the interaction between two components. Those skilled in the art can understand the specific meaning of the above terms in this application according to the specific circumstances.

[0060] In this application, unless otherwise expressly defined, the terms "above," "on top of," "over," "above," "below," "below," "below," or "below" for "first feature over second feature" can refer to the first and second features being in direct contact, or to the first and second features being in indirect contact through an intermediate medium. Furthermore, "above," "over," and "below" for "first feature over second feature" can mean the first feature is directly above or diagonally above the second feature, or simply indicates that the horizontal height of the first feature is higher than the horizontal height of the second feature. Similarly, "below," "below," and "below" for "first feature over second feature" can mean the first feature is directly below or diagonally below the second feature, or simply indicates that the horizontal height of the first feature is lower than the horizontal height of the second feature.

[0061] To fully understand this application, detailed steps and structures will be presented in the following description to illustrate the technical solution of this application. Preferred embodiments of this application are described in detail below; however, in addition to these detailed descriptions, this application may have other implementation methods.

[0062] The applicant discovered during the development of molecular beam epitaxy equipment that existing mainstream shutter devices all have drawbacks such as affecting the quality of thin film growth or increasing costs.

[0063] For example, the baffle positions in mainstream shutter devices are mainly divided into two types: horizontal and vertical. Horizontal arrangement has the problem that material adhering to the baffle falls onto the source furnace, blocking the source furnace outlet or disturbing the beam, affecting film growth. Vertical arrangement requires increasing the radial dimension of the growth chamber, increasing workshop space costs. In addition, the baffle is too close to the source furnace nozzle, causing a sudden change in growth temperature when it is opened, affecting the film growth quality.

[0064] For example, mainstream shutter mechanisms are powered by magnetic coupling or cylinders. Magnetic coupling is prone to demagnetization, making the production process unreliable. Cylinders, in order to meet the shutter closing speed requirements, undergo violent acceleration and deceleration during the start and end phases of their stroke. The vibrations generated during acceleration and deceleration are significant, easily leading to particle formation and peeling, affecting film growth quality. Furthermore, cylinders have a relatively high failure rate, also posing a production reliability problem.

[0065] After discovering the above-mentioned technical problems, the applicant developed the following technical solution.

[0066] This application provides a shutter device 30, applied to a molecular beam epitaxy device, see reference. Figure 1 The molecular beam epitaxy apparatus includes a growth chamber 10, a source furnace 20, and a thin film growth region 40 (not in the...). Figure 1 (shown) and the shutter device 30, the thin film growth region 40 is located obliquely above the source furnace 20.

[0067] refer to Figure 2 and Figure 3 The shutter device 30 includes:

[0068] Baffle 31 is configured to swing between a first position and a second position. When baffle 31 is in the first position, the beam jet trajectory 60 between the source furnace 20 and the thin film growth region 40 is blocked by baffle 31, and baffle 31 intersects the beam jet trajectory 60 at an angle. The free fall trajectory formed from any point on baffle 31 is outside the source furnace 20. When baffle 31 is in the second position, the beam jet trajectory 60 between the source furnace 20 and the thin film growth region 40 does not intersect with baffle 31, and baffle 31 is located below the source furnace 20.

[0069] The bracket 32 ​​has a first end connected to the baffle 31 and a second end extending away from the baffle 31; the bracket 32 ​​is capable of swinging motion to drive the baffle 31 to swing between a first position and a second position.

[0070] The power component 33 is configured to drive the swing of the bracket 32, and the power component 33 is connected to the second end of the bracket 32.

[0071] Understandably, under normal operating conditions, the molecular beam epitaxy equipment is placed horizontally, meaning the thin film growth region 40 is distributed horizontally. However, there are multiple source furnaces 20. Figure 1 There are 12 source furnaces 20, arranged around the lower periphery of the thin film growth region 40. Therefore, the beam trajectory in the source furnace 20 is angled upwards to spray onto the thin film growth region 40 above the center. It is understood that the molecular beam epitaxy equipment can also be placed in other orientations, with corresponding configurations for other components, and the number of source furnaces 20 can also vary, which will not be detailed here.

[0072] When the baffle 31 is in the first position, the shutter device 30 is closed; when the baffle 31 is in the second position, the shutter device 30 is open.

[0073] Specifically, the inclined intersection can mean that the surface of the baffle 31 in contact with the beam intersects the beam non-perpendicularly. In this way, even when the beam itself is inclined upwards, it ensures that the free-fall trajectory formed from any point on the baffle 31 is outside the source furnace 20. This reduces the amount of material adhering to the shutter falling into the source furnace nozzle or into the source furnace 20.

[0074] Furthermore, the inclined intersection can also reduce the amount of material adhering to the shutter falling into the source furnace nozzle or source furnace 20, thus ensuring that the distance between the baffle 31 and the source furnace 20 is not too far, thereby increasing the space size of the equipment.

[0075] Furthermore, when the baffle 31 is in the second position, the baffle 31 is located below the source furnace 20, which can further reduce the possibility of material adhering to the shutter falling into the source furnace nozzle or the source furnace 20.

[0076] Understandably, by using the bracket 32 ​​to drive the baffle 31 to swing between the first and second positions, it is easier to increase the swing amplitude and speed, etc.

[0077] Specifically, the second end of the support 32 can be outside the growth chamber 10, which facilitates docking with the power assembly 33.

[0078] In this embodiment of the shutter device 30, the baffle 31 is configured such that: when the baffle 31 is in a first position, it intersects the beam jet trajectory 60 at an angle, and the free fall trajectory formed from any point on the baffle 31 is outside the source furnace 20; when the baffle 31 is in a second position, the beam jet trajectory 60 between the source furnace 20 and the thin film growth region 40 does not intersect with the baffle 31, and the baffle 31 is located below the source furnace 20. This prevents material adhering to the shutter from falling into the source furnace jet or into the source furnace 20, reducing clogging of the source furnace jet and improving the quality of thin film growth.

[0079] In some other embodiments of this application, the first position is above the second position, and the bracket 32 ​​is capable of swinging up and down.

[0080] That is, the baffle 31 swings up and down, which can reduce the space occupied by the baffle 31 and reduce the floor space of the molecular beam epitaxy equipment.

[0081] In some other embodiments of this application, the side of the baffle 31 facing the source furnace 20 is an arc surface concave to the source furnace 20.

[0082] Combination Figure 2 It can be seen that the side of the baffle 31 facing the source furnace 20 is an arc surface concave to the source furnace 20, which can reduce space occupation while blocking the beam, and does not need to be too close to the source furnace 20.

[0083] In some other embodiments of this application, the radius of the arc surface is 200mm-400mm.

[0084] This is a suitable size derived from theoretical calculations and actual experiments. If the size is too large, it will increase the space occupied; if it is too small, material adhering to the top of the baffle 31 may fall into the source furnace injection port or the source furnace 20. It is understood that the radius of the arc surface can also be other values ​​if the overall structural dimensions of the equipment are significantly adjusted.

[0085] In other embodiments of this application, when the baffle 31 is in the first position, the angle between the baffle 31 and the beam jet trajectory 60 is 90°-140°. This angle is the angle between the centerline of the beam jet trajectory 60 and the tangential plane intersecting the baffle 31. Figure 2 The Chinese character is marked as A1.

[0086] This reduces the amount of material adhering to the baffle 31 that falls into the source furnace nozzle or source furnace 20.

[0087] Specifically, the included angle can be adjusted according to different source materials. For example, when the material filled in the source furnace is gallium or indium, the included angle between the baffle 31 and the beam jet trajectory 60 can be set to a larger value, such as 115-140° (i.e., the included angle between the shutter and the vertical direction is set to a smaller value). This makes the shutter closer to the vertical, reducing the amount of adhering material falling into the source furnace.

[0088] For example, if the material filled in the source furnace is aluminum, or if a gaseous source such as nitrogen, oxygen, or hydrogen is used, the angle between the baffle 31 and the beam jet trajectory 60 can be set to a smaller value, such as 90-115° (i.e., the angle between the shutter and the vertical direction is set to a larger value). This results in better shutter blocking and eliminates the risk of adhering material falling into the source furnace.

[0089] In some other embodiments of this application, the shutter device 30 further includes a support base 34, the support 32 being able to swing up and down with the support base 34 as a fulcrum; the support base 34 is located outside the growth chamber 10.

[0090] In this way, the swing of bracket 32 ​​is more stable and reliable.

[0091] In some other embodiments of this application, the length of the resistance arm of the bracket 32 ​​during oscillation is greater than the length of the power arm.

[0092] According to the lever principle, this can shorten the driving distance of the power component 33 and increase the swing speed of the baffle 31.

[0093] In other embodiments of this application, reference is made toFigure 2 , Figure 3 and Figure 5 The bracket 32 ​​includes a first support rod 321 and a second support rod 322 with different orientations. The second support rod 322 is connected to the baffle 31. The second support rod 322 is configured such that when the baffle 31 is in a first position or a second position, the second support rod 322 tilts downward from the end connected to the first support rod 321 to the other end.

[0094] In this way, the position of the baffle 31 is relatively low in both the first and second positions, reducing the amount of material adhering to the baffle 31 falling into the source furnace injection port or the source furnace 20.

[0095] In other embodiments of this application, reference is made to Figure 5 The second support rod 322 includes a collar that can be fitted onto the outside of the source furnace 20.

[0096] Understandably, since the baffle 31 is positioned relatively low, the second support rod 322 can be connected to the baffle 31 via a collar without interfering with the source furnace 20. It is also understandable that only half a collar or a single straight rod could be used, connecting only one side of the baffle 31. Alternatively, the bracket 32 ​​could be connected to the upper part of the baffle 31.

[0097] In other embodiments of this application, reference is made to Figure 4 The power assembly 33 includes a power component and a drive rod 332. One end of the drive rod 332 is connected to the power component, and the other end is connected to the bracket 32. The drive rod 332 moves up and down under the drive of the power component to drive the bracket 32 ​​to swing up and down.

[0098] The power unit 33 can be positioned outside the growth chamber 10 via the drive rod 332 to maintain a good growth environment in the growth chamber 10.

[0099] Specifically, refer to Figure 3 and Figure 6 The drive rod 332 is hinged to the bracket 32. More specifically, the drive rod is provided with a pin 3321, and the bracket can swing about the pin 3321.

[0100] In some other embodiments of this application, the power component is a motor 331.

[0101] Compared to power components such as cylinders, the 331 motor has a faster response speed, higher sensitivity, and less vibration during acceleration and deceleration.

[0102] Specifically, the power component is a servo motor 331, which features high precision, high speed, strong adaptability, low-speed stability, fast response, and low noise. The servo motor 331 can achieve closed-loop control of position, speed, and torque, overcoming the stepper motor 331's step loss problem and improving positioning accuracy. In other words, the servo motor 331 can precisely control the position of the baffle 31.

[0103] In some other embodiments of this application, the power assembly 33 further includes a rotation conversion member, the two ends of which are respectively connected to the power assembly and the drive rod 332 to convert the rotation of the motor 331 into the movement of the drive rod 332.

[0104] Understandably, most motors 331 output torque. Therefore, a rotational converter is designed to convert rotation into linear motion. There are many ways to use this converter, and no particular method is specified. It is also understandable that the power unit 33 could be a linear motor 331, directly driving the movement of the drive rod 332, without the need for a rotational converter.

[0105] In other embodiments of this application, reference is made to Figure 6 The rotation conversion component includes a drive plate 333, one end of which is provided with a lead screw 334, and the other end is connected to the drive rod 332; the axis of the lead screw 334 is parallel to the movement trajectory of the drive rod 332, and the output shaft of the motor 331 is connected to a lead screw 335 that cooperates with the lead screw 334.

[0106] Specifically, refer to Figure 9 and Figure 10 The output shaft of motor 331 is connected to lead screw 335 through coupling 3312 to transmit the torque of the output shaft to lead screw.

[0107] Specifically, the motor also includes a bearing 3313 to support the lead screw.

[0108] The lead screw 334 and lead screw 335 have advantages such as high precision, low friction loss, high rigidity and stability, which makes the movement of the control baffle 31 more stable and the position more accurate.

[0109] Specifically, the lead screw 335 and the drive rod 332 are both located on the same side of the drive plate 333. This makes the structure more compact.

[0110] In other embodiments of this application, reference is made to Figure 4 , Figure 7 and Figure 8The shutter device 30 also includes a telescopic tube 35, which is sleeved on the drive rod 332 and connected to the growth chamber 10, so as to extend and retract with the drive rod 332 during its movement to maintain an external seal.

[0111] Understandably, since the drive rod 332 is connected to the support 32, and the support 32 is connected to the baffle 31, the drive rod 332 and the growth chamber 10 are in communication to transmit power. However, the growth chamber 10 requires a vacuum environment, and the power assembly 33 driving the drive rod 332 is not suitable for a vacuum environment. Therefore, a telescopic tube 35 is provided and fitted onto the drive rod 332. In this way, it can extend and retract with the movement of the drive rod 332 while maintaining a seal.

[0112] In some other embodiments of this application, the telescopic tube 35 is a corrugated tube.

[0113] Corrugated pipes have a certain degree of shrinkage capacity and can maintain a seal during shrinkage. They also have a simple structure and are easy to install and maintain.

[0114] Specifically, the corrugated pipe is a metal corrugated pipe.

[0115] Metal corrugated pipes are more durable and have a longer service life.

[0116] Specifically, the bellows have an angle of 45 degrees. A 45-degree angle provides greater deformation capacity (i.e., expansion and contraction capacity) and a longer service life.

[0117] Specifically, the corrugated pipe is made of 316L stainless steel.

[0118] 316L stainless steel possesses high strength and excellent corrosion resistance, especially at high temperatures. Furthermore, the 316L stainless steel will not chemically react with the growth materials used in molecular beam epitaxy (MBE) equipment.

[0119] In other embodiments of this application, reference is made to Figure 7 and Figure 8 The shutter device 30 further includes a bracket sealing cover 36 and a first sealing flange 371. The bracket sealing cover 36 is in sealed communication with the growth chamber 10 through the first sealing flange 371. The portion of the bracket 32 ​​located outside the growth chamber 10 is located inside the bracket sealing cover 36. The drive rod 332 passes through the sealing cover and connects to the bracket 32.

[0120] As mentioned earlier, the drive rod 332 and the support 32 are connected to the growth chamber 10, but they need to be kept sealed. Therefore, except for the telescopic rod fitted onto the drive rod 332, the portion of the support 32 extending out of the growth chamber 10, as well as the connection between the support 32 and the drive rod 332, all need to be sealed.

[0121] Understandably, by setting a sealing flange at the part of the support 32 that protrudes from the growth chamber 10, that is, by connecting the support sealing cover 36 and the growth chamber 10 through the sealing flange, the sealing can be made more reliable.

[0122] Specifically, the first sealing flange 371 can be a conflat flange (CF), which offers good sealing performance. To reduce chemical reactions with the growth materials in the molecular beam epitaxy equipment, the first sealing flange 371 can be made of 316L stainless steel.

[0123] In other embodiments of this application, reference is made to Figure 7 and Figure 8 The shutter device 30 further includes a second sealing flange 372, one end of which is sealed to the telescopic tube 35 and the other end is sealed to the drive plate 333, so that the telescopic tube 35 seals the drive rod 332.

[0124] Understandably, the connection between the telescopic tube 35 and the drive plate 333 needs to be sealed, and this is made more reliable by setting a sealing flange.

[0125] Similarly, the second sealing flange 372 can also be a CF flange, and the material can also be 316L stainless steel.

[0126] In other embodiments of this application, reference is made to Figure 7 and Figure 8 The shutter device 30 also includes a third sealing flange 373, one end of which is sealed to the bracket sealing cover 36, and the other end is sealed to the telescopic tube 35.

[0127] As mentioned above, the sealed connection between the two cavities is more reliable by using a sealing flange. Similarly, the third sealing flange 373 can also be a CF flange, and the material can also be 316L stainless steel.

[0128] This application also provides a molecular beam epitaxy apparatus, see reference. Figure 1 Molecular beam epitaxy equipment includes:

[0129] Growth chamber 10 has a growth cavity;

[0130] Source furnace 20, with the injection port located in the growth chamber;

[0131] The thin film growth region 40 is located in the growth chamber and is located obliquely above the source furnace 20; the injection port faces the thin film growth region 40;

[0132] The shutter device 30 described above.

[0133] In the molecular beam epitaxy apparatus of this application embodiment, the baffle 31 is configured such that: when the baffle 31 is in a first position, it intersects the beam jet trajectory 60 at an angle, and the free fall trajectory formed from any point on the baffle 31 is outside the source furnace 20; when the baffle 31 is in a second position, the beam jet trajectory 60 between the source furnace 20 and the thin film growth region 40 does not intersect with the baffle 31, and the baffle 31 is located below the source furnace 20. This prevents material adhering to the shutter from falling into the source furnace jet or into the source furnace 20, reducing clogging of the source furnace jet and improving the quality of thin film growth.

[0134] In other embodiments of this application, the molecular beam epitaxy apparatus further includes:

[0135] The first cold shield plate 51 is located above the source furnace 20. The first cold shield plate 51 extends upward and tilted from the inner wall of the growth chamber toward the center, and its projection on the horizontal plane covers the projection of the source furnace 20 on the horizontal plane.

[0136] Compared to existing technologies, this embodiment of the application tilts the first cold screen plate 51 to reduce the amount of material adhering to the shutter falling into the source furnace nozzle or the source furnace 20. That is, the first cold screen plate 51 gradually extends upward from the outside to the inside.

[0137] In some other embodiments of this application, the angle between the first cold screen plate 51 and the horizontal plane is 5°-45°.

[0138] This not only allows the cooling screen to function and maintain ultra-high vacuum, but also reduces the amount of material adhering to the shutter falling into the source furnace nozzle or source furnace 20. Specifically, when manufacturing molecular beam epitaxy equipment, different angles can be selected depending on the source material.

[0139] For example, when the material filled in the source furnace is mainly gallium or indium, the angle between the first cold shield plate 51 and the horizontal plane can be 25°-45°, that is, a larger angle, so as to reduce the amount of material adhering to it falling into the source furnace.

[0140] For example, if the material filled in the source furnace is mainly aluminum, or if a gaseous source such as nitrogen, oxygen, or hydrogen is used, the angle between the first cold shield plate 51 and the horizontal plane can be 5°-25°, that is, the angle is smaller. In this way, the shielding effect of the first cold shield plate 51 is better, and there is no risk that the adhered material will fall into the source furnace.

[0141] In other embodiments of this application, reference is made to Figure 11The molecular beam epitaxy apparatus further includes:

[0142] The second cold shield plate 52 is located on both sides of the source furnace 20 in the horizontal direction, and the second cold shield plate 52 seals against the first cold shield plate 51.

[0143] In this way, the cold shield can be used to maintain the ultra-high vacuum, and the leakage of the jet beam can be reduced, for example, when the baffle 31 is closed, the beam can leak into the growth chamber or into other source furnaces 20 on both sides.

[0144] In other embodiments of this application, the molecular beam epitaxy apparatus further includes:

[0145] The third cold shield plate 53 is located in front of the injection port of the source furnace 20, and the third cold shield plate 53 is sealed and abutted against the first cold shield plate 51 and the second cold shield plate 52 respectively; the third cold shield plate 53 has a through hole in the middle for the beam of the source furnace 20 to pass through, and the size of the through hole is adapted to the size of the baffle 31.

[0146] In this way, the cooling shield can function to maintain an ultra-high vacuum, while also reducing the leakage of the jet beam, such as leakage into the growth chamber when the baffle 31 is closed. Furthermore, this eliminates the need to reduce leakage by placing the baffle 31 close to the jet port of the source furnace 20, thus reducing the temperature transients when the baffle 31 is opened and closed.

[0147] It should be understood that the above embodiments are exemplary and are not intended to encompass all possible implementations of the technical solutions of this application. Various modifications and changes can be made to the above embodiments without departing from the scope of this application. Similarly, the various technical features of the above embodiments can be arbitrarily combined to form other embodiments of this application that may not be explicitly described. Therefore, the above embodiments merely illustrate several implementations of this application and do not limit the scope of protection of this patent application.

Claims

1. A shutter device applied in a molecular beam epitaxy (MBE) apparatus, the MBE apparatus comprising a growth chamber, a source furnace, a thin film growth region, and the shutter device, wherein the thin film growth region is located obliquely above the source furnace, characterized in that, The shutter device includes: A baffle is configured to swing between a first position and a second position. When the baffle is in the first position, the beam jet trajectory between the source furnace and the thin film growth region is blocked by the baffle, and the baffle intersects the beam jet trajectory at an angle. The free fall trajectory formed from any point on the baffle is outside the source furnace. When the baffle is in the second position, the beam jet trajectory between the source furnace and the thin film growth region does not intersect with the baffle, and the baffle is located below the source furnace. The bracket has a first end connected to the baffle and a second end extending away from the baffle; the bracket is capable of swinging to cause the baffle to swing between a first position and a second position. A power unit is configured to drive the swing of the support, and the power unit is connected to a second end of the support.

2. The shutter device according to claim 1, characterized in that, The first position is above the second position, and the bracket can swing up and down.

3. The shutter device according to claim 2, characterized in that, The side of the baffle facing the source furnace is a concave arc surface.

4. The shutter device according to claim 3, characterized in that, The radius of the arc surface is 200mm-400mm.

5. The shutter device according to claim 1, characterized in that, When the baffle is in the first position, the angle between the baffle and the beam jet trajectory is 90°-140°, and the angle is the angle between the center line of the beam jet trajectory and the tangential plane of the baffle.

6. The shutter device according to claim 2, characterized in that, The shutter device also includes a support base, which can swing up and down with the support base as a fulcrum; the support base is located outside the growth chamber.

7. The shutter device according to claim 6, characterized in that, The length of the resistance arm of the support during oscillation is greater than the length of the power arm.

8. The shutter device according to claim 1, characterized in that, The support includes a first support rod and a second support rod with different orientations, the second support rod being connected to the baffle; the second support rod is configured such that when the baffle is in a first position or a second position, the second support rod tilts downward from the end connected to the first support rod to the other end.

9. The shutter device according to claim 8, characterized in that, The second support rod includes a collar that can be fitted onto the outside of the source furnace.

10. The shutter device according to any one of claims 2-9, characterized in that, The power assembly includes a power component and a drive rod. One end of the drive rod is connected to the power component, and the other end is connected to the bracket. The drive rod moves up and down under the drive of the power component to drive the bracket to swing up and down.

11. The shutter device according to claim 10, characterized in that, The power component is an electric motor.

12. The shutter device according to claim 11, characterized in that, The power assembly also includes a rotation conversion element, the two ends of which are respectively connected to the power assembly and the drive rod to convert the rotation of the motor into the movement of the drive rod.

13. The shutter device according to claim 12, characterized in that, The rotation conversion component includes a drive plate, one end of which is provided with a lead screw nut, and the other end is connected to the drive rod; the axis of the lead screw nut is parallel to the movement trajectory of the drive rod, and the output shaft of the motor is connected to a lead screw that cooperates with the lead screw nut.

14. The shutter device according to claim 13, characterized in that, The shutter device also includes a telescopic tube, which is sleeved on the drive rod and connected to the growth chamber, so as to extend and retract along with the drive rod during its movement to maintain an external seal.

15. The shutter device according to claim 14, characterized in that, The telescopic tube is a corrugated pipe.

16. The shutter device according to claim 14, characterized in that, The shutter device further includes a support sealing cover and a first sealing flange. The support sealing cover is in sealed communication with the growth chamber through the first sealing flange. The portion of the support located outside the growth chamber is located inside the support sealing cover. The drive rod passes through the sealing cover and connects to the support.

17. The shutter device according to claim 16, characterized in that, The shutter device further includes a second sealing flange, one end of which is sealed to the telescopic tube, and the other end is sealed to the drive plate, so that the telescopic tube is sealed to the drive rod.

18. The shutter device according to claim 17, characterized in that, The shutter device also includes a third sealing flange, one end of which is sealed to the bracket sealing cover, and the other end is sealed to the telescopic tube.

19. A molecular beam epitaxy apparatus, characterized in that, include: The growth chamber has a growth cavity; Source furnace, with the injection port located in the growth chamber; The thin film growth region is located in the growth chamber and is located obliquely above the source furnace; The injection nozzle is directed toward the thin film growth region; The shutter device according to any one of claims 1-18.

20. The molecular beam epitaxy apparatus according to claim 19, characterized in that, The molecular beam epitaxy apparatus also includes: The first cold shield plate is located above the source furnace. The first cold shield plate extends upward and inclined from the inner wall of the growth chamber towards the center, and its projection on the horizontal plane covers the projection of the source furnace on the horizontal plane.

21. The molecular beam epitaxy apparatus according to claim 20, characterized in that, The angle between the first cold shield and the horizontal plane is 5°-45°.

22. The molecular beam epitaxy apparatus according to claim 20, characterized in that, The molecular beam epitaxy apparatus also includes: The second cold shield plate is located on both sides of the source furnace in the horizontal direction, and the second cold shield plate seals against the first cold shield plate.

23. The molecular beam epitaxy apparatus according to claim 22, characterized in that, The molecular beam epitaxy apparatus also includes: The third cold shield plate is located in front of the injection port of the source furnace, and the third cold shield plate is sealed and abutted against the first cold shield plate and the second cold shield plate respectively; the third cold shield plate has a through hole in the middle for the beam of the source furnace to pass through, and the size of the through hole is adapted to the size of the baffle.

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