Electric heating type semiconductor processing tail gas treatment device

By using an electrically heated semiconductor processing exhaust gas treatment device, which utilizes heating rod combustion and multi-stage water washing separation technology, the problem of untreated exhaust gas is solved, achieving safe and environmentally friendly exhaust gas emissions.

CN223663335UActive Publication Date: 2025-12-12上海高笙集成电路设备有限公司
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Patent Information

Application Number
CN202423269156.8
Authority / Receiving Office
CN · China
Patent Type
Utility models(China)
Current Assignee / Owner
Filing Date
2024-12-30
Publication Date
2025-12-12
Estimated Expiration
2034-12-30

AI Technical Summary

Technical Problem

Existing semiconductor manufacturing processes generate exhaust gases that are not adequately treated, posing environmental pollution and safety hazards.

Method used

The device employs an electrically heated semiconductor processing exhaust gas treatment unit. The exhaust gas is burned at high temperature in the reaction tube by a heating rod to generate harmless substances. Multiple spray pipes and sieve plates are used for water washing and water-gas separation. Combined with a make-up air mechanism, it ensures complete combustion and gas emissions that meet standards.

Benefits of technology

It achieves full treatment of exhaust gas, generates harmless substances, meets environmental protection standards, and dilutes the gas to a safe concentration when the heating rod fails, ensuring safe emissions.

✦ Generated by Eureka AI based on patent content.

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Abstract

The utility model relates to the technical field of semiconductor tail gas treatment, in particular to an electric heating type semiconductor processing tail gas treatment device which comprises a water tank, a first pipe body and a second pipe body, the first pipe body and the second pipe body are arranged above the water tank and communicated with the water tank, the first pipe body comprises a gas inlet cavity, a reaction pipe and a cooling pipe, and the second pipe body comprises a gas outlet pipe, a water-gas separation pipe and a washing pipe. The gas inlet cavity is communicated with a gas inlet pipe for inputting gas to be treated, a heating rod for heating the gas and combusting the gas is arranged in the gas inlet cavity, an annular air plate for inputting combustion-supporting air is connected between the gas inlet cavity and the reaction pipe, and spraying pipes for washing the gas are arranged in the water tank and the washing pipe. According to the utility model, the process gas is fully combusted and sprayed and hydrolyzed, so that water-soluble substances are discharged as wastewater, and the treated gas reaching the standard is discharged to a common central system; and the air supplementing mechanism is arranged for secondary air supplementing, combustion is more sufficient, and meanwhile when the heating rod fails, the air flow is increased to dilute waste gas.
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Description

Technical Field

[0001] This utility model relates to the field of semiconductor exhaust gas treatment technology, and in particular to an electrically heated semiconductor processing exhaust gas treatment device. Background Technology

[0002] In semiconductor manufacturing, gases such as hydrogen are used as precursor gases to complete the chemical vapor deposition process. This process generates exhaust gases containing various components, including hydrogen, hydrogen chloride, and solid particles. If these exhaust gases are emitted directly without proper treatment, they will not only pollute the environment but may also pose safety hazards. Therefore, to ensure production safety and comply with environmental protection standards, the exhaust gases generated in the process must be effectively treated. Common exhaust gas treatment equipment often suffers from inadequate exhaust gas treatment. Utility Model Content

[0003] This utility model aims to solve the above problems and provides an electrically heated semiconductor processing exhaust gas treatment device, the technical solution of which is as follows:

[0004] An electrically heated semiconductor processing exhaust gas treatment device includes a water tank and a first pipe and a second pipe disposed above and connected to the water tank. The first pipe includes an air inlet chamber, a reaction pipe, and a cooling pipe arranged sequentially from top to bottom. The second pipe includes an air outlet pipe, a water-gas separation pipe, and a water washing pipe arranged sequentially from top to bottom. The air inlet chamber is connected to an air inlet pipe that inputs the gas to be treated. A heating rod for heating and combusting the gas is disposed in the air inlet chamber. An annular air plate for inputting combustion air is connected between the air inlet chamber and the reaction pipe. A spray pipe for washing the gas is disposed in the water tank and the water washing pipe.

[0005] Based on the above scheme, an air supply mechanism is also included, which includes a blower, a blower pipe and an air supply pipe. The air supply pipe is connected between the reaction pipe and the cooling pipe, and the blower pipe supplies air into the air supply pipe.

[0006] Based on the above scheme, the air supply pipe includes an outer wall and an inner wall, with a ventilation cavity between the outer wall and the inner wall. The end of the blower pipe is located in the ventilation cavity, and an air vent is provided at the end of the blower pipe. A ventilation hole is provided on the inner wall, with multiple ventilation holes arranged circumferentially. A blower guide plate is fixedly installed on the inner side of the inner wall. The blower guide plate is inclined downward from the outside to the inside. The air in the blower pipe passes through the air vent and the ventilation hole in sequence, and then enters the air supply pipe downward along the blower guide plate.

[0007] Preferably, the water tank is provided with a first water washing pipe, a second water washing pipe, a water tank sieve plate and a third water washing pipe. The first water washing pipe is located below the cooling pipe, and the second water washing pipe, the water tank sieve plate and the third water washing pipe are arranged in order from bottom to top below the water washing pipe. The water tank sieve plate is a perforated plate.

[0008] Based on the above scheme, the cooling pipe includes an outer pipe and an inner pipe. The outer pipe is located outside the inner pipe, and a gap is provided between the inner pipe and the outer pipe. The lower edge of the inner pipe is not higher than the first water washing pipe, and the spraying direction of the first water washing pipe is towards the outer wall of the inner pipe.

[0009] Preferably, the washing pipe is provided with a washing spray pipe, a first washing screen plate and a second washing screen plate in sequence from top to bottom, and a water-air separation screen plate is provided at the bottom of the water-air separation pipe. The first washing screen plate, the second washing screen plate and the water-air separation screen plate are perforated plates.

[0010] Preferably, an air intake pipe is provided on the annular air plate, the air intake pipe is connected to the air intake chamber, and a downwardly inclined air guide plate is provided on the inner wall of the annular air plate, the air guide plate is located at the end of the air outlet inside the air intake pipe.

[0011] Preferably, the air outlet pipe includes a first air outlet section, a variable diameter section and a second air outlet section connected sequentially from top to bottom. The diameter of the variable diameter section gradually increases from top to bottom, and the diameter of the lower end of the variable diameter section is greater than the diameter of the upper end of the second air outlet section.

[0012] Preferably, the gas outlet pipe includes a detection hole, which is connected to a temperature sensor and / or a gas concentration sensor.

[0013] Preferably, the first pipe, the second pipe, and the water tank are housed inside the frame housing.

[0014] The beneficial effects of this invention are as follows: Waste gases such as hydrogen generated during semiconductor manufacturing undergo high-temperature combustion in a reaction tube under the action of a heating rod, producing harmless substances such as water and carbon dioxide. The resulting mixture is then sprayed, cooled, and hydrolyzed by a water washing assembly, allowing the water-soluble substances to be discharged as wastewater. The treated gas, meeting standards, is then discharged to the central operating system, thus completing the thorough treatment of the waste gas. A secondary air supply mechanism is installed inside the cooling pipe to ensure more complete combustion. Simultaneously, when the heating rod fails, the airflow is increased to dilute the waste gas. Multiple spray pipes and sieves ensure thorough water washing and preliminary water-gas separation. Attached Figure Description

[0015] Figure 1 : A schematic diagram of the structure of this utility model;

[0016] Figure 2 : Schematic diagram of the frame housing structure of this utility model;

[0017] Figure 3 : A cross-sectional view of the structure of this utility model;

[0018] Figure 4 This utility model Figure 3Enlarged view of part A in the middle;

[0019] Figure 5 This utility model Figure 4 Enlarged view of part B in the middle. Detailed Implementation

[0020] The present invention will be further described below with reference to the accompanying drawings and embodiments:

[0021] In this utility model, unless otherwise explicitly specified and limited, the terms "installation," "connection," "joining," and "fixing," etc., should be interpreted broadly. For example, they can refer to a fixed connection, a detachable connection, or an integral part; they can refer to a direct connection or an indirect connection through an intermediate medium; they can refer to the internal communication of two components or the interaction between two components. For those skilled in the art, the specific meaning of the above terms in this utility model can be understood according to the specific circumstances.

[0022] In the description of this utility model, it should be understood that the terms "center," "length," "upper," "lower," "front," "rear," "left," "right," "vertical," "horizontal," "top," "bottom," and "inner," etc., indicating the orientation or positional relationship, are based on the orientation or positional relationship shown in the accompanying drawings and are only for the convenience of describing this utility model and simplifying the description, and do not indicate or imply that the device or element referred to must have a specific orientation, or be constructed and operated in a specific orientation, and therefore should not be construed as a limitation of this utility model. Furthermore, the terms "first" and "second" are used for descriptive purposes only and should not be construed as indicating or implying relative importance or implicitly specifying the number of indicated technical features. Thus, a feature defined with "first" or "second" may explicitly or implicitly include one or more of that feature. In the description of this utility model, unless otherwise stated, "a plurality of" means two or more.

[0023] In this invention, unless otherwise explicitly specified and limited, "above" or "below" the second feature can include direct contact between the first and second features, or contact between the first and second features through another feature between them. Furthermore, "above," "over," and "on top" of the second feature includes the first feature directly above or diagonally above the second feature, or simply indicates that the first feature is at a higher horizontal level than the second feature. "Below," "below," and "under" the second feature includes the first feature directly below or diagonally below the second feature, or simply indicates that the first feature is at a lower horizontal level than the second feature.

[0024] like Figures 1 to 5As shown, an electrically heated semiconductor processing exhaust gas treatment device includes a water tank 81 and a first pipe and a second pipe disposed above and connected to the water tank 81. The first pipe, the second pipe, and the water tank 81 are disposed within a frame housing 9. The first pipe includes an air inlet chamber 11, a reaction chamber 2, and a cooling pipe arranged sequentially from top to bottom. The second pipe includes an air outlet pipe, a water-gas separation pipe 6, and a water washing pipe 71 arranged sequentially from top to bottom. The air inlet chamber 11 is connected to an air inlet pipe 12 that inputs the gas to be treated. A heating rod 10 for heating and igniting the gas is disposed within the air inlet chamber 11. An annular air plate 13 for inputting combustion air is connected between the air inlet chamber 11 and the reaction pipe 2. A spray pipe for washing the gas is disposed within the water tank 81 and the water washing pipe 71. After the process gas is introduced into the air inlet chamber 11, it is heated by the heating rod 10. The air introduced through the annular air plate 13 assists in the combustion of the process gas. After combustion, the gas is cooled in the cooling pipe and the flame is extinguished. The gas mixture is washed with water after passing through the water tank 81 and the water washing pipe 71. The water-gas mixture is separated into water and gas multiple times during its ascent until it is discharged at the air outlet pipe.

[0025] like Figure 4 As shown, an air intake pipe 14 is provided on the annular air plate 13. The air intake pipe 14 is connected to the air intake chamber 11. An air guide plate 15 with downward inclination is provided on the inner wall of the annular air plate 13. The air guide plate 15 is located at the end of the air outlet inside the air intake pipe 14. Compressed air outside the air intake chamber 11 is input through the air intake pipe 14 and discharged to the lower part of the air intake chamber 11 under the guidance of the air guide plate 15, so as to facilitate mixing and combustion with the process gas (mainly hydrogen).

[0026] like Figure 5 As shown, it also includes a makeup air mechanism, which includes a blower 31, a blower pipe 32, and a makeup air pipe 36. The makeup air pipe 36 is connected between the reaction pipe 2 and the cooling pipe, and the blower pipe 32 supplies air into the makeup air pipe 36. Through the makeup air mechanism, on the one hand, air is introduced into the reaction pipe 2 a second time to improve the hydrogen combustion reaction rate and ensure complete combustion of hydrogen; on the other hand, when the heating rod 10 fails, the air volume can be increased to fill the reaction pipe 2 with a large amount of air, thereby diluting the hydrogen to an emission standard.

[0027] The make-up air pipe 36 includes an outer wall and an inner wall, with a ventilation cavity between the outer wall and the inner wall. The end of the blower pipe 32 is located in the ventilation cavity, and a vent 33 is provided at the end of the blower pipe 32. A vent hole 34 is provided on the inner wall, with multiple vent holes 34 arranged circumferentially. A blower guide plate 35 is fixedly installed on the inner side of the inner wall. The blower guide plate 35 is inclined downward from the outside to the inside. The air in the blower pipe 32 passes through the vent hole 33 and the vent hole 34 in sequence, and then enters the make-up air pipe 36 downward along the blower guide plate 35. This ensures both uniform input of make-up air and control of the direction of air flow, allowing the auxiliary gas to move towards the cooling pipe.

[0028] The water tank 81 is equipped with a first water washing pipe 82, a second water washing pipe 83, a water tank sieve plate 84, and a third water washing pipe 85. The first water washing pipe 82 is located below the cooling pipe, and the second water washing pipe 83, the water tank sieve plate 84, and the third water washing pipe 85 are arranged sequentially from bottom to top below the water washing pipe 71. The water tank sieve plate 84 is a perforated plate. Through multiple spray water washing processes, water-soluble substances in the mixed gas are fully dissolved in the water and separated from the gas. At the same time, the perforated sieve plate is used to perform initial screening of the water-gas mixture, thus achieving water-gas separation.

[0029] Preferably, the cooling pipe includes an outer pipe 41 and an inner pipe 42. The outer pipe 41 is disposed outside the inner pipe 42, and a gap is provided between the inner pipe 42 and the outer pipe 41. The lower edge of the inner pipe 42 is not higher than the first water washing pipe 82, and the spray direction of the first water washing pipe 82 is towards the outer wall of the inner pipe 42. This avoids the sprayed water column from directly contacting the flame of the combustion reaction in the inner pipe 42. By spraying the outer wall of the inner pipe 42, the cooling pipe is cooled, thereby cooling the gas in the inner pipe 42 and completely extinguishing the flame.

[0030] The washing pipe 71 is provided with a washing spray pipe 72, a first washing screen plate 73 and a second washing screen plate 74 arranged sequentially from top to bottom. A water-air separation screen plate is provided at the bottom of the water-air separation pipe 6. The first washing screen plate 73, the second washing screen plate 74 and the water-air separation screen plate are porous plates, which facilitates the separation of water and air in the mixture during the rising process.

[0031] The exhaust pipe includes a first exhaust section 51, a variable diameter section 52, and a second exhaust section 53 connected sequentially from top to bottom. The diameter of the variable diameter section 52 gradually increases from top to bottom, and the diameter at the lower end of the variable diameter section 52 is larger than the diameter at the upper end of the second exhaust section 53. This allows the flow velocity of the discharged gas to decrease at the variable diameter section and then gradually increase, preventing gas backflow and potential explosion hazards. The exhaust pipe includes a detection port, which is connected to a temperature sensor and / or a gas concentration sensor to detect whether the temperature and concentration of the discharged gas meet emission standards.

[0032] The present invention has been described above by way of example, but the present invention is not limited to the specific embodiments described above. Any modifications or variations made based on the present invention shall fall within the scope of protection claimed by the present invention.

Claims

1. An electrically heated semiconductor processing exhaust gas treatment device, characterized in that, The system includes a water tank (81) and a first pipe and a second pipe connected to the water tank (81) above it. The first pipe includes an air inlet chamber (11), a reaction pipe (2), and a cooling pipe arranged from top to bottom. The second pipe includes an air outlet pipe, a water-gas separation pipe (6), and a water washing pipe (71) arranged from top to bottom. The air inlet chamber (11) is connected to an air inlet pipe (12) that inputs the gas to be treated. A heating rod (10) for heating the gas and causing it to burn is provided in the air inlet chamber (11). An annular air plate (13) for inputting combustion air is connected between the air inlet chamber (11) and the reaction pipe (2). A spray pipe for washing the gas is provided in the water tank (81) and the water washing pipe (71).

2. The electrically heated semiconductor processing exhaust gas treatment device according to claim 1, characterized in that, It also includes an air supply mechanism, which includes a blower (31), a blower pipe (32) and an air supply pipe (36). The air supply pipe (36) is connected between the reaction pipe (2) and the cooling pipe, and the blower pipe (32) supplies air into the air supply pipe (36).

3. The electrically heated semiconductor processing exhaust gas treatment device according to claim 2, characterized in that, The make-up air pipe (36) includes an outer wall and an inner wall. A ventilation cavity is provided between the outer wall and the inner wall. The end of the blower pipe (32) is located in the ventilation cavity. A vent (33) is provided at the end of the blower pipe (32). A vent (34) is provided on the inner wall. Multiple vents (34) are provided along the circumference. A blower guide plate (35) is fixedly provided on the inner side of the inner wall. The blower guide plate (35) is inclined downward from the outside to the inside. The air in the blower pipe (32) passes through the vent (33) and the vent (34) in sequence, and then enters the make-up air pipe (36) downward along the blower guide plate (35).

4. The electrically heated semiconductor processing exhaust gas treatment device according to claim 1, characterized in that, The water tank (81) is equipped with a first water washing pipe (82), a second water washing pipe (83), a water tank sieve plate (84) and a third water washing pipe (85). The first water washing pipe (82) is located below the cooling pipe. The second water washing pipe (83), the water tank sieve plate (84) and the third water washing pipe (85) are arranged from bottom to top below the water washing pipe (71). The water tank sieve plate (84) is a perforated plate.

5. The electrically heated semiconductor processing exhaust gas treatment device according to claim 4, characterized in that, The cooling pipe includes an outer pipe (41) and an inner pipe (42). The outer pipe (41) is located outside the inner pipe (42), and there is a gap between the inner pipe (42) and the outer pipe (41). The lower edge of the inner pipe (42) is not higher than the first water washing pipe (82), and the spraying direction of the first water washing pipe (82) is towards the outer wall of the inner pipe (42).

6. The electrically heated semiconductor processing exhaust gas treatment device according to claim 1, characterized in that, The washing pipe (71) is provided with a washing spray pipe (72), a first washing screen plate (73) and a second washing screen plate (74) arranged from top to bottom. A water-air separation screen plate is provided at the bottom of the water-air separation pipe (6). The first washing screen plate (73), the second washing screen plate (74) and the water-air separation screen plate are perforated plates.

7. The electrically heated semiconductor processing exhaust gas treatment device according to claim 1, characterized in that, An air intake pipe (14) is provided on the annular air plate (13), and the air intake pipe (14) is connected to the air intake chamber (11). A downwardly inclined air guide plate (15) is provided on the inner wall of the annular air plate (13), and the air guide plate (15) is located at the end of the air outlet inside the air intake pipe (14).

8. The electrically heated semiconductor processing exhaust gas treatment device according to claim 1, characterized in that, The air outlet pipe includes a first air outlet section (51), a variable diameter section (52) and a second air outlet section (53) connected sequentially from top to bottom. The diameter of the variable diameter section (52) gradually increases from top to bottom, and the diameter of the lower end of the variable diameter section (52) is greater than the diameter of the upper end of the second air outlet section (53).

9. The electrically heated semiconductor processing exhaust gas treatment device according to claim 1, characterized in that, The gas outlet pipe includes a detection port, which is connected to a temperature sensor and / or a gas concentration sensor.

10. The electrically heated semiconductor processing exhaust gas treatment device according to claim 1, characterized in that, The first pipe, the second pipe and the water tank (81) are installed inside the frame housing (9).