Single crystal furnace thermal field device

Abstract

The utility model is applicable to the technical field of single crystal furnaces, and provides a single crystal furnace thermal field device which comprises a thermal field device body for performing thermal field on a single crystal furnace, the drainage pipe is arranged on one side of the thermal field device body and communicated with the thermal field device body, and a drainage mechanism used for conducting drainage circulation on hot air containing silicon monoxide in the thermal field device body is arranged on the drainage pipe; and the first filtering mechanism and the second filtering mechanism are assembled on the drainage pipe and are used for filtering silicon monoxide in the thermal field device body. According to the single crystal furnace thermal field device provided by the scheme, the single crystal furnace can be heated to melt crystals, and silicon monoxide generated in the crystal processing process can be fully filtered, so that the loss of components in the thermal field device caused by the silicon monoxide is reduced, the overall failure rate is reduced, and the service life is prolonged.

Description

TECHNICAL FIELD

[0001] The utility model belongs to single crystal furnace technical field especially relates to a single crystal furnace thermal field device. BACKGROUND

[0002] Single crystal furnace is also called full-automatic straight-pulling single crystal growth furnace, which is a device for melting polycrystalline materials such as polysilicon in an inert gas (mainly nitrogen and helium) environment by using a graphite heater, and growing dislocation-free single crystals by straight-pulling method.

[0003] The single crystal furnace thermal field device is an important component of the single crystal furnace, and has a crucial influence on the growth quality and efficiency of single crystals. However, some existing single crystal furnace thermal field devices still have certain deficiencies in actual use. When the thermal field device melts polysilicon, silicon monoxide particles are emitted, which will react with graphite heater, graphite crucible and other accessories under high temperature, thereby reducing the service life of graphite heater, graphite crucible and other accessories. However, some common single crystal furnace thermal field devices cannot filter and treat the generated silicon monoxide. Through retrieval, the patent document with authorization announcement number CN206783819U discloses a straight-pulling single crystal furnace thermal field device, which can filter and treat silicon monoxide. However, it can only filter silicon monoxide particles once, and the filtering effect is poor. CONTENT OF THE UTILITY MODEL

[0004] The utility model provides a single crystal furnace thermal field device, which aims to solve the problem that the existing single crystal furnace thermal field device cannot sufficiently filter and treat silicon monoxide generated during the melting process of crystals.

[0005] To solve the above problems, the utility model is realized as follows: a single crystal furnace thermal field device includes a thermal field device body for the thermal field of a single crystal furnace; a flow guide pipe is arranged on one side of the thermal field device body and is in communication with the thermal field device body, and a flow guide mechanism for guiding and circulating hot gas containing silicon monoxide in the thermal field device body is arranged on the flow guide pipe; a first filter mechanism and a second filter mechanism are assembled on the flow guide pipe for filtering silicon monoxide in the thermal field device body.

[0006] Preferably, the hot field device body comprises a quartz crucible, a graphite crucible, a heater, an electrode, a heat preservation layer, a draft tube, an air inlet pipe, a shell and an air outlet pipe, the graphite crucible is arranged outside the quartz crucible, the heater is assembled outside the graphite crucible and is used for heating and melting the crystal placed in the quartz crucible, the electrode is arranged on the heater, the heat preservation layer is assembled outside the heater, the shell is arranged outside the heat preservation layer, the draft tube is assembled on the shell, the air inlet pipe and the air outlet pipe are both arranged on the shell and the two ends of the draft tube are respectively connected with the air inlet pipe and the air outlet pipe.

[0007] Preferably, an inner lining layer is arranged on the draft tube and located on the inner surface of the draft tube, and the material of the inner lining layer is preferably molybdenum.

[0008] Preferably, the first filtering mechanism comprises: a mounting shell fixedly installed on the draft tube and connected with the draft tube; and a plurality of filtering plates for filtering the silicon monoxide particles in the hot field device body, which are assembled in the mounting shell and are preferably made of stainless steel.

[0009] Preferably, the second filtering mechanism comprises: a mounting box fixedly installed on the draft tube and connected with the draft tube; and a filter for filtering the silicon monoxide in the hot field device body, which is assembled in the mounting box and is preferably made of ceramic.

[0010] Preferably, the draft mechanism comprises: a mounting pipe fixedly installed on the draft tube and connected with the draft tube; a mounting shaft rotatably installed on the mounting pipe and fixedly installed with a plurality of draft vanes for drafting the hot gas containing silicon monoxide in the hot field device body; and a driving mechanism assembled on the mounting pipe and the mounting shaft and used for driving the draft vanes to rotate.

[0011] Preferably, the driving mechanism comprises: a motor fixedly installed on one side of the outer wall of the mounting pipe; a placement shaft rotatably installed on the mounting pipe and fixedly connected with the output shaft of the motor at one end; and two bevel gears fixedly sleeved on the placement shaft and the mounting shaft respectively and meshed with each other.

[0012] Preferably, positioning frames are fixedly installed on the inner walls of both sides of the mounting shell, and positioning strips are fixedly installed on both sides of the filtering plates and are adaptively connected with the positioning frames.

[0013] Compared with the related art, the single crystal furnace hot field device has the following beneficial effects:

[0014] Compared with the prior art, the single crystal furnace thermal field device provided by the scheme can melt and process the crystal by heating the single crystal furnace through the whole thermal field device body, and can filter the silicon monoxide generated in the crystal processing process, thereby reducing the damage of the silicon monoxide to the internal components of the thermal field device body, reducing the overall failure rate, and prolonging the overall service life. BRIEF DESCRIPTION OF DRAWINGS

[0015] Figure 1 is a front view structural schematic diagram of a single crystal furnace thermal field device provided by the utility model;

[0016] Figure 2 is a front view structural schematic diagram of the utility model;

[0017] Figure 3 is an enlarged structural schematic diagram of the A part shown in Figure 2

[0018] Figure 4 is an enlarged structural schematic diagram of the B part shown in Figure 2

[0019] Figure 5 is an enlarged structural schematic diagram of the C part shown in Figure 2

[0020] Figure 6 is a three-dimensional structural schematic diagram of the positioning frame in the utility model.

[0021] Reference signs: 1, thermal field device body; 101, quartz crucible; 102, graphite crucible; 103, heater; 104, electrode; 105, heat preservation layer; 106, flow guide cylinder; 1061, inner lining layer; 107, gas inlet pipe; 108, outer shell; 109, gas outlet pipe; 2, drainage pipe; 3, first filtering mechanism; 301, mounting shell; 302, filter plate; 4, second filtering mechanism; 401, mounting box; 402, filter; 5, mounting pipe; 6, mounting shaft; 7, fan blade; 8, motor; 9, placing shaft; 10, bevel gear; 11, positioning frame; 12, positioning strip. DETAILED DESCRIPTION

[0022] ​​​Unless otherwise defined, all technical and scientific terms used herein have the same meaning as commonly understood by one of ordinary skill in the art to which this application belongs; the terminology used in the description herein is for describing particular embodiments only and is not intended to be limiting of the application; the use herein of terms such as "comprise", "have" and "include" or variations such as "comprises", "comprising", "containing", "having" and "includes" are intended to be open-ended. The use of terms such as "first", "second" and "third" with respect to various objects are used merely for distinguishing between objects having a same identity and does not imply a specific order or sequence. The terms "inner", "outer", "left", "right" and the like describe orientations or positional relationships based on the orientations or positional relationships as shown in the drawings and are used only for the purpose of assisting in understanding the present application and simplifying the description, and therefore cannot be construed as limiting the present application to a particular orientation, configuration or operation, and thus should not be interpreted as limiting the present application to a particular orientation, configuration or operation.

[0023] Reference herein to "an embodiment" means that a particular feature, structure, or characteristic described in connection with the embodiment can be included in at least one embodiment of the application. The appearances of the phrase "in an embodiment" in various places in the specification are not necessarily referring to the same embodiment, nor are separate or alternative embodiments mutually exclusive of other embodiments. It is expressly understood that the embodiments described herein are merely examples from a whole class of comparable embodiments which those skilled in the art will readily appreciate.

[0024] The utility model embodiment provides a single crystal furnace heat field device, such as Figures 1-6 As shown in the figure, the single crystal furnace heat field device comprises: a heat field device body 1 for the heat field of the single crystal furnace; a flow guide pipe 2 arranged on one side of the heat field device body 1 and communicated with the heat field device body 1, wherein the flow guide pipe 2 is provided with a flow guide mechanism for guiding and circulating the hot gas containing silicon monoxide in the heat field device body 1; a first filter mechanism 3 and a second filter mechanism 4 are assembled on the flow guide pipe 2 for filtering the silicon monoxide in the heat field device body 1.

[0025] In the embodiment, the single crystal furnace can be heated by the thermal field device body 1, so that the crystal can be processed by melting. The working principle of the thermal field device body 1 is the prior art, and will not be described in detail here. When the thermal field device body 1 heats and melts the crystal, a certain amount of silicon monoxide will be generated in the thermal field device body 1. In order to reduce the influence of silicon monoxide on the thermal field device body 1, the flow guide mechanism is started to guide the hot gas containing silicon monoxide in the thermal field device body 1 to the first filter mechanism 3 and the second filter mechanism 4. Through the cooperation of the first filter mechanism 3 and the second filter mechanism 4, the silicon monoxide in the hot gas can be well filtered. The filtered hot gas is then returned to the thermal field device body 1, thereby effectively reducing the damage of silicon monoxide to the internal components of the thermal field device body 1, reducing the overall failure rate, and prolonging the service life of the thermal field device body 1. The entire thermal field device body 1 can heat the single crystal furnace to melt the crystal, and can double-filter the silicon monoxide generated during the crystal processing, reduce the damage of silicon monoxide to the internal components of the thermal field device body 1, reduce the overall failure rate, and prolong the service life.

[0026] In a further preferred embodiment of the present application, the thermal field device body 1 comprises a quartz crucible 101, a graphite crucible 102, a heater 103, an electrode 104, a heat preservation layer 105, a flow guide cylinder 106, an air inlet pipe 107, an outer shell 108 and an air outlet pipe 109. The graphite crucible 102 is arranged outside the quartz crucible 101. The heater 103 is assembled outside the graphite crucible 102. The heater 103 is used to heat and melt the crystal placed in the quartz crucible 101. The electrode 104 is arranged on the heater 103. The heat preservation layer 105 is assembled outside the heater 103. The outer shell 108 is arranged outside the heat preservation layer 105. The flow guide cylinder 106 is assembled on the outer shell 108. The air inlet pipe 107 and the air outlet pipe 109 are both arranged on the outer shell 108, and the two ends of the flow guide pipe 2 are respectively connected with the air inlet pipe 107 and the air outlet pipe 109.

[0027] In the embodiment, when the heat field device body 1 is used, the heater 103 is started to heat and melt the crystal in the quartz crucible 101, the graphite crucible 102 can well support the quartz crucible 101 and also plays a role of heat transfer bridge, in the heating process, the heater 103 first radiates heat to the graphite crucible 102, the graphite crucible 102 then transfers heat to the quartz crucible 101, so as to maintain the state of the silicon material in the quartz crucible 101, since the graphite has excellent heat conduction performance, the heat can be effectively transferred from the heater 103 to the quartz crucible 101, the temperature condition required for single crystal growth is ensured, the whole can be well insulated by the insulation layer 105, and the working principle of the heat field device body 1 is prior art, which will not be described in detail here.

[0028] In the further preferred embodiment of the utility model, the inner lining layer 1061 is arranged on the flow guide cylinder 106, the inner lining layer 1061 is located on the inner surface of the flow guide cylinder 106, and the material of the inner lining layer 1061 is preferably molybdenum.

[0029] In the embodiment, the material of the inner lining layer 1061 is preferably molybdenum, the characteristics of molybdenum such as high temperature resistance, large heat capacity and small heat radiation are utilized to increase the longitudinal temperature gradient during the processing of the crystal bar, improve the crystallization speed of the solid-liquid interface, further improve the pulling speed and reduce the power consumption, and improve the overall heat field effect of the heat field device body 1.

[0030] In the further preferred embodiment of the utility model, the first filtering mechanism 3 comprises: a mounting shell 301 fixedly installed on the drainage tube 2, the drainage tube 2 and the mounting shell 301 are communicated, a plurality of filter plates 302 for filtering silicon monoxide particles in the heat field device body 1 are assembled in the mounting shell 301, and the material of the filter plate 302 is preferably stainless steel.

[0031] In the embodiment, after the hot gas with silicon monoxide in the heat field device body 1 enters the mounting shell 301, the mesh numbers of the plurality of filter plates 302 are all different, the silicon monoxide particles in the hot gas can be filtered for the first time, the loss of the internal components of the heat field device body 1 caused by the silicon monoxide is reduced, the failure rate of the whole is reduced, and the service life of the whole is prolonged, and when the filter plate 302 is made of stainless steel, the high temperature resistance of the filter plate 302 can be effectively improved.

[0032] In the further preferred embodiment of the utility model, the second filtering mechanism 4 comprises: a mounting box 401 fixedly installed on the drainage tube 2, the drainage tube 2 and the mounting box 401 are communicated, and a filter 402 for filtering silicon monoxide in the heat field device body 1 is assembled in the mounting box 401, and the material of the filter 402 is preferably ceramic.

[0033] In the embodiment, after the hot gas after the first filtration is introduced into the installation box 401, the hot gas is filtered again under the action of the filter 402, the filtering effect on silicon monoxide is effectively improved, the influence of silicon monoxide on the hot field device body 1 is effectively reduced, the filter 402 is made of high-temperature-resistant ceramic material, and silicon monoxide particles can be effectively filtered in a high-temperature environment.

[0034] In the further preferable embodiment of the utility model, the drainage mechanism comprises: an installation pipe 5 fixedly installed on the drainage pipe 2, the drainage pipe 2 and the installation pipe 5 are communicated; an installation shaft 6 rotatably installed on the installation pipe 5, a plurality of drainage fan blades 7 for draining the hot gas containing silicon monoxide in the hot field device body 1 are fixedly installed on the installation shaft 6; a driving mechanism assembled on the installation pipe 5 and the installation shaft 6 for driving the rotation of the drainage fan blades 7.

[0035] In the embodiment, when the drainage mechanism is used, the driving mechanism is started to drive the rotation of the drainage fan blades 7 on the installation shaft 6, the rotating drainage fan blades 7 can drain the hot gas containing silicon monoxide in the hot field device body 1 into the first filter mechanism 3 and the second filter mechanism 4 for filtering, and then the filtered hot gas is returned to the hot field device body 1.

[0036] In the further preferable embodiment of the utility model, the driving mechanism comprises: a motor 8 fixedly installed on one side of the outer wall of the installation pipe 5; a placement shaft 9 rotatably installed on the installation pipe 5, one end of the placement shaft 9 is fixedly connected with the output shaft of the motor 8; two bevel gears 10 fixedly sleeved on the placement shaft 9 and the installation shaft 6 respectively, and the two bevel gears 10 are meshed with each other.

[0037] In the embodiment, when the driving mechanism is used, the motor 8 is started to drive the rotation of the placement shaft 9, and under the action of the bevel gear 10, the drainage fan blades 7 on the installation shaft 6 are driven to rotate to drain the hot gas containing silicon monoxide in the hot field device body 1.

[0038] In the further preferable embodiment of the utility model, the both sides of the installation shell 301 are fixedly installed with positioning frames 11, and the both sides of the filter plate 302 are fixedly installed with positioning strips 12, and the positioning strips 12 and the positioning frames 11 are adaptively connected.

[0039] In the embodiment, the filter plate 302 is positioned in the installation shell 301 through the cooperation of the positioning frame 11 and the positioning strip 12, and the filter plate 302 is conveniently disassembled and cleaned.

[0040] Compared with the related art, the single crystal furnace can be heated by the whole heat field device body 1 to melt and process the crystal, and the silicon monoxide generated in the crystal processing process can be filtered, so that the damage of the silicon monoxide to the internal components of the heat field device body 1 is reduced, the overall failure rate is reduced, and the service life of the whole is prolonged.

[0041] In several embodiments provided in the present application, it should be understood that the disclosed device can be implemented in other ways.

[0042] The above embodiments are only used to illustrate the technical solutions of the present application, and not to limit the protection scope of the present application. Obviously, the described embodiments are only some of the embodiments of the present application, not all the embodiments. Based on these embodiments, all other embodiments obtained by those skilled in the art without creative labor fall within the scope of the present application. Although the present application has been described in detail with reference to the above embodiments, those skilled in the art can still combine, add or delete the features in the embodiments of the present application according to the circumstances without creative labor, so as to obtain different, but essentially not deviating from the concept of the present application. Other technical solutions, which also belong to the scope of protection of the present application.

Claims

1. A heat field device for a single crystal furnace, characterized by comprising: The utility model relates to a hot field device body for the hot field of single crystal furnace, a flow guide pipe arranged on one side of the hot field device body and communicated with the hot field device body, a flow guide mechanism arranged on the flow guide pipe for guiding and circulating the hot gas containing silicon monoxide in the hot field device body, a first filter mechanism and a second filter mechanism assembled on the flow guide pipe for filtering the silicon monoxide in the hot field device body. The hot field device body comprises a quartz crucible, a graphite crucible, a heater, an electrode, a heat preservation layer, a flow guide cylinder, an air inlet pipe, an outer shell and an air outlet pipe, the graphite crucible is arranged outside the quartz crucibble, the heater is assembled outside the graphite crucible and used for heating and melting the crystal placed in the quartz crucible, the electrode is arranged on the heater, the heat preservation layer is assembled outside the heater, the outer shell is arranged outside the heat preservation layer, the flow guide cylinder is assembled on the outer shell, the air inlet pipe and the air outlet pipe are both arranged on the outer shell, and the two ends of the flow guide pipe are communicated with the air inlet pipe and the air outlet pipe respectively. The flow guide cylinder is provided with an inner lining layer located on the inner surface of the flow guide cylinder, and the inner lining layer is made of molybdenum. The first filter mechanism comprises a mounting shell fixedly installed on the flow guide pipe and communicated with the flow guide pipe, a plurality of filter plates made of stainless steel and assembled in the mounting shell for filtering the silicon monoxide particles in the hot field device body.

2. The heat field apparatus of claim 1, wherein The second filter mechanism comprises a mounting box fixedly installed on the flow guide pipe and communicated with the flow guide pipe, and a filter made of ceramic and assembled in the mounting box for filtering the silicon monoxide in the hot field device body.

3. The heat field apparatus of claim 2, wherein the heat field apparatus is a single crystal furnace heat field apparatus. The flow guide mechanism comprises a mounting pipe fixedly installed on the flow guide pipe and communicated with the flow guide pipe, a mounting shaft rotatably installed on the mounting pipe and fixedly installed with a plurality of flow guide vanes for guiding the hot gas containing silicon monoxide in the hot field device body, and a driving mechanism assembled on the mounting pipe and the mounting shaft for driving the flow guide vanes to rotate.

4. The heat field apparatus of claim 1, wherein The driving mechanism comprises a motor fixedly installed on one side of the outer wall of the mounting pipe, a placement shaft rotatably installed on the mounting pipe and fixedly connected with the output shaft of the motor at one end, and two bevel gears fixedly sleeved on the placement shaft and the mounting shaft respectively and meshed with each other. Both sides of the mounting shell are fixedly installed with positioning frames, and both sides of the filter plates are fixedly installed with positioning strips which are adaptively connected with the positioning frames. ​ 5. The heat field apparatus of claim 1, wherein the heat field apparatus is a single crystal furnace heat field apparatus. ​ ​ ​ 6. The heat field apparatus of claim 1, wherein ​ ​ ​ ​ 7. The heat field apparatus of claim 6, wherein the heat field apparatus is a single crystal furnace heat field apparatus. ​ ​ ​ ​ 8. The heat field apparatus of claim 4, wherein the heat field apparatus is a single crystal furnace heat field apparatus. ​

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