Packaging structure of power module and driving circuit

Abstract

The utility model discloses a power module packaging structure and a driving circuit, and the structure comprises a lead frame which comprises a plurality of base islands and a plurality of pins; a high-side transistor, a low-side transistor, a high-side driving unit, and a low-side driving unit; the plastic package body comprises a first side edge and a second side edge which are opposite to each other and a third side edge and a fourth side edge which are opposite to each other, the first side edge and the second side edge extend along the width direction of the plastic package body, and the third side edge and the fourth side edge extend along the length direction of the plastic package body; wherein the high-side driving unit comprises a high-side driving first chip and a high-side driving second chip, and the high-side driving unit drives the high-side transistor. Wherein the first chip and the second chip of the high-side driver are respectively powered by an external power supply of a packaging structure. The first chip and the second chip which are isolated from each other and driven at the high side are used for inhibiting the influence of floating end voltage fluctuation on the grid of the transistor in the switching process, and the reliability of the power module is improved.

Description

TECHNICAL FIELD

[0001] The utility model relates to the technical field of semiconductor, more particularly, a kind of packaging structure and drive circuit of power module. BACKGROUND

[0002] IPM (Intelligent Power Module, power module) is a new type of high-power power electronic device, with high current density, low saturation voltage and high voltage resistance advantages, power module is integrated with high, low side power transistor and corresponding high, low side drive chip. Silicon-based transistor is used in traditional power module, including IGBT+FRD, RC-IGBT and MOS etc. The existence of three due to diode reverse recovery and tail current, so that switching loss is larger, and due to the need of withstand voltage, drift region thickness is larger, so that on-resistance is also larger, these problems greatly limit the switching frequency of power module.

[0003] With the rising demand of power module switching frequency, traditional high side drive chip has been difficult to meet the demand. On the one hand, the traditional high side drive chip adopts self-boosting capacitor charging method to supply power to the chip, due to the need of self-boosting capacitor charging time, so the conduction time and frequency of power switch are limited. That is to say, the traditional high side drive chip cannot adapt to the scene of high switching frequency, when the switching frequency of switching device is higher, the self-boosting capacitor charging time is insufficient, which is easy to cause the occurrence of undervoltage; on the other hand, the traditional high side drive chip cannot adapt to the scene of faster switching speed, due to the faster switching speed, under the action of parasitic inductance, it is easy to produce negative pressure at the VS pin of high side drive chip, so that the gate of high side transistor is opened incorrectly, which affects the function and reliability of power module.

[0004] In view of this, the application applies an isolated high side drive chip to the power module, and proposes a packaging structure and drive circuit of power module to improve the above problems. UTILITY MODEL CONTENT

[0005] In view of the above problems, the utility model aims at providing a packaging structure and drive circuit of power module to improve the performance and reliability of power module, and avoid or improve the above problems.

[0006] The utility model provides a kind of packaging structure of power module, comprising: lead frame, including multiple base islands and multiple pins;High side transistor, low side transistor, high side drive unit and low side drive unit;Plastic package, including opposite first side and second side, and opposite third side and fourth side, the first side and the second side extend along the width direction of plastic package, the third side and fourth side extend along the length direction of plastic package;The high side drive unit includes each phase high side drive's first chip and each phase high side drive's second chip, each phase high side drive's first chip and each phase high side drive's second chip are isolated from each other, and the high side drive unit drives high side transistor;The low side drive unit drives low side transistor.

[0007] Optionally, the high side drive's first chip and the high side drive's second chip of corresponding phase are respectively located on different base islands on the lead frame.

[0008] Optionally, each phase high side drive's first chip includes first phase high side drive's first chip, second phase high side drive's first chip and third phase high side drive's first chip;Each phase high side drive's second chip includes first phase high side drive's second chip, second phase high side drive's second chip and third phase high side drive's second chip;The high side drive unit includes first high side drive unit, second high side drive unit and third high side drive unit, the first high side drive unit includes the first phase high side drive's first chip and the first phase high side drive's second chip, the second high side drive unit includes the second phase high side drive's first chip and the second phase high side drive's second chip, and the third high side drive unit includes the third phase high side drive's first chip and the third phase high side drive's second chip.

[0009] Optionally, the first phase high side drive's first chip, the second phase high side drive's first chip, the third phase high side drive's first chip and the low side drive chip are located on the first base island of the lead frame.

[0010] Optionally, the first phase high side drive's first chip, the second phase high side drive's first chip, the third phase high side drive's first chip are electrically connected to the first base island, and the first end of the first base island extends the common ground terminal to the third side of plastic package.

[0011] Optionally, the second end of the first base island extends to the second side of plastic package through the seventh support structure.

[0012] Optionally, the lead frame further comprises a second base island, a third base island and a fourth base island, the first phase high-side driven second chip is located on the second base island of the lead frame, the second phase high-side driven second chip is located on the third base island of the lead frame, and the third phase high-side driven second chip is located on the fourth base island of the lead frame.

[0013] Optionally, the second base island, the third base island and the fourth base island are located between the first base island and the third side edge.

[0014] Optionally, the high-side driven first chip and the high-side driven second chip of the corresponding phase are arranged along a length direction or a width direction of the plastic package.

[0015] Optionally, the lead frame further comprises a fifth base island, and the high-side transistors are located on the fifth base island, and the high-side transistors comprise a first high-side transistor, a second high-side transistor and a third high-side transistor.

[0016] Optionally, the lead frame further comprises a sixth base island, a seventh base island and an eighth base island, and the low-side transistors comprise a first low-side transistor, a second low-side transistor and a third low-side transistor, the first low-side transistor is located on the sixth base island, the second low-side transistor is located on the seventh base island, and the third low-side transistor is located on the eighth base island.

[0017] Optionally, a first phase high-side control signal output end of the first phase high-side driven second chip is electrically connected to a first transition base island, the first transition base island is electrically connected to a control end of a first high-side transistor; a second phase high-side control signal output end of the second phase high-side driven second chip is electrically connected to a second transition base island, the second transition base island is electrically connected to a control end of a second high-side transistor; and a third phase high-side control signal output end of the third phase high-side driven second chip is electrically connected to a third transition base island, the third transition base island is electrically connected to a control end of a third high-side transistor.

[0018] Optionally, the first transition base island, the second transition base island and the third transition base island are adjacent to the second base island, the third base island and the fourth base island respectively.

[0019] Optionally, a first phase low side control signal output end of the low side drive chip is electrically connected to a fourth transition base island, and the fourth transition base island is electrically connected to a control end of the first low side transistor; a second phase low side control signal output end of the low side drive chip is electrically connected to a fifth transition base island, and the fifth transition base island is electrically connected to a control end of the second low side transistor; a third phase low side control signal output end of the low side drive chip is electrically connected to a sixth transition base island, and the sixth transition base island is electrically connected to a control end of the third low side transistor.

[0020] Optionally, the fourth transition base island, the fifth transition base island, and the sixth transition base island are located around the low side drive chip.

[0021] Optionally, the first transition base island, the second transition base island, and the third transition base island extend to a third side edge of the plastic package through a first support structure, a second support structure, and a third support structure, respectively.

[0022] Optionally, the fourth transition base island extends to the third side edge of the plastic package through a fourth support structure; and the fifth transition base island and the sixth transition base island extend to a first side edge of the plastic package through a fifth support structure and a sixth support structure, respectively.

[0023] Optionally, a first end of the first high side transistor is electrically connected to a seventh transition base island, and the seventh transition base island is electrically connected to a first phase output end of the power module; a first end of the second high side transistor is electrically connected to an eighth transition base island, and the eighth transition base island is electrically connected to a second phase output end of the power module; a first end of the third high side transistor is electrically connected to a ninth transition base island, and the ninth transition base island is electrically connected to a third phase output end of the power module; a first end of the first low side transistor is electrically connected to a tenth transition base island, and the tenth transition base island is electrically connected to a first phase DC power supply negative end of the power module; a first end of the second low side transistor is electrically connected to an eleventh transition base island, and the eleventh transition base island is electrically connected to a second phase DC power supply negative end of the power module; and a first end of the third low side transistor is electrically connected to a twelfth transition base island, and the twelfth transition base island is electrically connected to a third phase DC power supply negative end of the power module.

[0024] Optionally, the seventh transition base island, the eighth transition base island, the ninth transition base island, the tenth transition base island, the eleventh transition base island, and the twelfth transition base island are arranged between the transistor and a fourth side edge of the plastic package along a length direction of the plastic package.

[0025] Optionally, the plurality of pins include high-voltage pins, and the high-voltage pins include: a third-phase high-side drive suspension power supply positive terminal, a third-phase high-side drive suspension power supply ground terminal, a second-phase high-side drive suspension power supply positive terminal, a second-phase high-side drive suspension power supply ground terminal, a first-phase high-side drive suspension power supply positive terminal, a first-phase high-side drive suspension power supply ground terminal, a direct-current power supply positive terminal, a first-phase output terminal, a second-phase output terminal, and a third-phase output terminal.

[0026] Optionally, the third-phase high-side drive suspension power supply positive terminal, the third-phase high-side drive suspension power supply ground terminal, the second-phase high-side drive suspension power supply positive terminal, the second-phase high-side drive suspension power supply ground terminal, the first-phase high-side drive suspension power supply positive terminal, and the first-phase high-side drive suspension power supply ground terminal are located on a third side of the plastic package, and distances from the third-phase high-side drive suspension power supply positive terminal, the third-phase high-side drive suspension power supply ground terminal, the second-phase high-side drive suspension power supply positive terminal, the second-phase high-side drive suspension power supply ground terminal, the first-phase high-side drive suspension power supply positive terminal, and the first-phase high-side drive suspension power supply ground terminal to the second side are less than distances from the third-phase high-side drive suspension power supply positive terminal, the third-phase high-side drive suspension power supply ground terminal, the second-phase high-side drive suspension power supply positive terminal, the second-phase high-side drive suspension power supply ground terminal, the first-phase high-side drive suspension power supply positive terminal, and the first-phase high-side drive suspension power supply ground terminal to the first side.

[0027] Optionally, the direct-current power supply positive terminal, the first-phase output terminal, the second-phase output terminal, and the third-phase output terminal are arranged on a fourth side of the plastic package in sequence, and distances from the direct-current power supply positive terminal, the first-phase output terminal, the second-phase output terminal, and the third-phase output terminal to the second side are less than distances from the direct-current power supply positive terminal, the first-phase output terminal, the second-phase output terminal, and the third-phase output terminal to the first side.

[0028] Optionally, the plurality of pins include low-voltage pins, and part of the low-voltage pins are located on the third side, and the rest of the low-voltage pins are located on the fourth side, and distances from the low-voltage pins to the first side are less than distances from the low-voltage pins to the second side.

[0029] Optionally, the first chip of the high-side drive and the second chip of the high-side drive of the corresponding phase are powered by an external power supply of the packaging structure.

[0030] Optionally, at least part of the low-side transistors and the high-side transistors include silicon carbide transistors.

[0031] Optionally, the first chip of the high-side drive includes a first logic circuit and a first isolation unit, and the second chip of the high-side drive of the corresponding phase includes a second logic and drive circuit and a second isolation unit, the first logic circuit is connected between a power supply terminal and a common ground terminal, and receives a high-side input signal of the corresponding phase, and modulates the high-side input signal into a first carrier signal and a second carrier signal; the first carrier signal and the second carrier signal are converted into a third carrier signal and a fourth carrier signal via the first isolation unit and the second isolation unit; and the second logic and drive circuit demodulates the third carrier signal and the fourth carrier signal into a square wave signal synchronized with the high-side input signal of the corresponding phase and outputs the square wave signal to an output port.

[0032] Optionally, the first isolation unit and the second isolation unit are connected through an interconnection line.

[0033] Optionally, the first isolation unit and the second isolation unit are on-chip transformers, which convert the first carrier signal and the second carrier signal into the third carrier signal and the fourth carrier signal through electromagnetic induction.

[0034] Optionally, the first isolation unit and the second isolation unit are high-voltage flat capacitors, which convert the first carrier signal and the second carrier signal into the third carrier signal and the fourth carrier signal through the direct current blocking alternating current of the capacitor.

[0035] Optionally, the first isolation unit and the second isolation unit are optocouplers, which convert the first carrier signal and the second carrier signal into the third carrier signal and the fourth carrier signal through the photoelectric effect.

[0036] Optionally, the control end of the first high-side transistor is connected with the first-phase high-side control signal output end of the second chip of the first-phase high-side drive, the second end of the first high-side transistor is connected with the positive end of the direct current power supply, the first end of the first high-side transistor is connected with the first-phase high-side drive floating power supply ground end of the power module, the floating ground end of the second chip of the first-phase high-side drive, and the first-phase output end of the power module, and the power supply end of the second chip of the first-phase high-side drive is connected with the first-phase high-side drive floating power supply end of the power module.

[0037] The control end of the second high-side transistor is connected with the second-phase high-side control signal output end of the second chip of the second-phase high-side drive, the second end of the second high-side transistor is connected with the positive end of the direct current power supply, the first end of the second high-side transistor is connected with the second-phase high-side drive floating power supply ground end of the power module, the floating ground end of the second chip of the second-phase high-side drive, and the second-phase output end of the power module, and the power supply end of the second chip of the second-phase high-side drive is connected with the second-phase high-side drive floating power supply end of the power module.

[0038] The control end of the third high-side transistor is connected with the third-phase high-side control signal output end of the second chip of the third-phase high-side drive, the second end of the third high-side transistor is connected with the positive end of the direct current power supply, the first end of the third high-side transistor is connected with the third-phase high-side drive floating power supply ground end of the power module, the floating ground end of the second chip of the third-phase high-side drive, and the third-phase output end of the power module, and the power supply end of the second chip of the third-phase high-side drive is connected with the third-phase high-side drive floating power supply end of the power module.

[0039] Optionally, the power supply end of the first chip of the first phase high side drive is connected with the first phase power supply end of the power module, and the signal input end of the first chip of the first phase high side drive is connected with the first phase high side signal input end of the power module.

[0040] the power supply end of the first chip of the second phase high side drive is connected with the second phase power supply end of the power module, and the signal input end of the first chip of the second phase high side drive is connected with the second phase high side signal input end of the power module.

[0041] the power supply end of the first chip of the third phase high side drive is connected with the third phase power supply end of the power module, and the signal input end of the first chip of the third phase high side drive is connected with the third phase high side signal input end of the power module.

[0042] the common ground end of the first chip of the first phase high side drive, the first chip of the second phase high side drive and the first chip of the third phase high side drive is led out as the common ground end of the power module.

[0043] According to another aspect of the present application, a driving circuit is provided, which comprises the packaging structure as described above.

[0044] According to the packaging structure and the driving circuit of the power module, the high side drive chip adopts an isolation design, and each phase high side drive chip is divided into a first chip of high side drive and a second chip of high side drive. The high side drive chip of the present application is an isolation chip. On the one hand, the self-boosting capacitor does not need to be charged to supply power to the high side drive chip, but an independent power supply is used, thereby avoiding the problem of under-voltage caused by insufficient charging of the self-boosting capacitor under high switching frequency. On the other hand, the first chip of high side drive of the isolation high side drive chip is isolated from the corresponding second chip of high side drive. Therefore, in the scenario of fast switching speed, the voltage fluctuation generated by the floating ground end of the second chip of high side drive has less impact on the first chip of high side drive, and thus does not affect the control signal transmitted from the low voltage side to the high voltage side, and does not cause the high side transistor to malfunction.

[0045] Further, the power module also adopts a silicon carbide MOS, which is combined with the isolated high side drive chip, thereby further improving the switching frequency of the power module.

[0046] Further, the transition base island is designed to reduce the single wire bonding distance and avoid the risk of wire collapse caused by too long wire bonding distance.

[0047] Further, the isolated high side drive chip is arranged on the base island of the lead frame instead of being integrated by using a circuit board, thereby avoiding the delamination of the circuit board and the pollution of other materials to the power module, and improving the reliability and service life of the power module. BRIEF DESCRIPTION OF DRAWINGS

[0048] The above and other objects, features and advantages of the present application will become more apparent from the following description of the preferred embodiments of the present application with reference to the accompanying drawings, in which:

[0049] Figure 1 FIG. 1 shows a circuit structure schematic diagram of a power module according to a first embodiment of the present application.

[0050] Figure 2 FIG. 2 shows a packaging schematic diagram of the power module according to the first embodiment of the present application.

[0051] Figure 3 FIG. 4 shows a packaging schematic diagram of a power module according to a second embodiment of the present application.

[0052] Figure 4 FIG. 5 shows a circuit structure schematic diagram of a power module according to a third embodiment of the present application.

[0053] Figure 5 FIG. 6 shows a packaging schematic diagram of the power module according to the third embodiment of the present application.

[0054] Figure 6 FIG. 7 shows a circuit structure schematic diagram of each phase high-side drive unit according to the present application.

[0055] Figure 7 FIG. 8 shows a schematic diagram of a first isolation unit and a second isolation unit according to the first embodiment of the present application.

[0056] Figure 8 FIG. 9 shows a schematic diagram of a first isolation unit and a second isolation unit according to the second embodiment of the present application.

[0057] Figure 9 FIG. 10 shows a schematic diagram of a first isolation unit and a second isolation unit according to the third embodiment of the present application. DETAILED DESCRIPTION

[0058] The present application will now be described more fully with reference to the accompanying drawings. The drawings can be briefly described as follows. Additionally, some of the illustrations can not be to scale. The present application may, however, be embodied in many different forms and should not be construed as limited to the specific embodiments set forth herein. Rather, these embodiments are provided so that this disclosure will be thorough and complete, and fully convey the scope of the application to those skilled in the art.

[0059] The present application can take various forms, some of which will now be described.

[0060] Figure 1 FIG. 1 shows a circuit structure schematic diagram of a power module according to a first embodiment of the present application. Figure 2 FIG. 2 shows a packaging schematic diagram of the power module according to the first embodiment of the present application.

[0061] As shown in Figure 1 , the power module, for example, includes a high-side drive unit, a low-side drive unit, and corresponding transistors. Specifically, the high-side drive unit includes a first chip A11 of a first-phase high-side drive, a second chip A12 of the first-phase high-side drive, a first chip A21 of a second-phase high-side drive, a second chip A22 of the second-phase high-side drive, a first chip A31 of a third-phase high-side drive, and a second chip A32 of the third-phase high-side drive. The high-side drive unit adopts an isolation chip design of the first chip (low-voltage side) and the second chip (high-voltage side), eliminates the limitation of the bootstrap charging time on the switching frequency, and in the scenario of a faster switching speed, the voltage fluctuation generated by the floating ground of the second chip of the high-side drive has less effect on the first chip of the high-side drive, thus will not affect the control signal transmitted from the low-voltage side to the high-voltage side, eliminating the effect of the switching process on the high-side gate voltage, and will not cause the high-side transistor to malfunction, ensuring the reliability of the power module. The power module 100, for example, is a three-phase power module, including a U-phase, a V-phase, and a W-phase, wherein the first chip A11 of the first-phase high-side drive and the second chip A12 of the first-phase high-side drive are U-phase high-side drives, the first chip A21 of the second-phase high-side drive and the second chip A22 of the second-phase high-side drive are V-phase high-side drives, and the first chip A31 of the third-phase high-side drive and the second chip A32 of the third-phase high-side drive are W-phase high-side drives; the low-side drive unit includes a low-side drive chip A4; the corresponding transistors of the high-side drive unit include a first high-side transistor Q11, a second high-side transistor Q12, and a third high-side transistor Q13; and the corresponding transistors of the low-side drive include a first low-side transistor Q21, a second low-side transistor Q22, and a third low-side transistor Q23.

[0062] The power supply end (VCC) of the first chip A11 of the first-phase high-side drive is connected to the U-phase power supply end (V CCUH ) of the power module, the common ground end (COM) of the first chip A11 of the first-phase high-side drive is connected to the common ground end (Com) of the power module, and the signal input end (IN) of the first chip A11 of the first-phase high-side drive is connected to the U-phase high-side signal input end (IN UH ) of the power module; the power supply end (VB) of the second chip A12 of the first-phase high-side drive is connected to the U-phase high-side drive floating power supply end (V BU) connected, the U-phase high side control signal output end (OUTUH) of the second chip A12 of the first phase high side drive is connected with the control end of the first high side transistor Q11, and the floating ground end (VS) of the second chip A12 of the first phase high side drive is connected with the U-phase high side drive floating power supply ground end (Vsu) of the power module and the first end of the first high side transistor Q11. There are also two wires between the first chip A11 of the first phase high side drive and the second chip A12 of the first phase high side drive for transmitting the electrical signal (sine analog signal) between the low voltage side and the high voltage side. The first end of the first high side transistor Q11 is connected with the U-phase output end (U) of the power module, and the second end of the first high side transistor Q11 is connected with the positive end of the direct current power supply.

[0063] The power supply end (VCC) of the first chip A21 of the second phase high side drive is connected with the V-phase power supply end (V CCVH ) of the power module, the common ground end (COM) of the first chip A21 of the second phase high side drive is connected with the common ground end (Com) of the power module, and the signal input end (IN) of the first chip A21 of the second phase high side drive is connected with the V-phase high side signal input end (IN VH ) of the power module; the power supply end (VB) of the second chip A22 of the second phase high side drive is connected with the V-phase high side drive floating power supply end (V BV ) of the power module, the V-phase high side control signal output end (OUTVH) of the second chip A22 of the second phase high side drive is connected with the control end of the second high side transistor Q12, and the floating ground end (VS) of the second chip is connected with the V-phase high side drive floating power supply end (V SV ) of the power module and the first end of the second high side transistor Q12. There are also two wires between the first chip A21 of the second phase high side drive and the second chip A22 of the second phase high side drive for transmitting the electrical signal (sine analog signal) between the low voltage side and the high voltage side. The first end of the second high side transistor Q12 is connected with the V-phase output end (V) of the power module, and the second end of the second high side transistor Q12 is connected with the positive end of the direct current power supply.

[0064] The power supply end (VCC) of the first chip A31 of the third phase high side drive is connected with the W-phase power supply end (V CCWH ) of the power module, the common ground end (COM) of the first chip A31 of the third phase high side drive is connected with the common ground end (Com) of the power module, and the signal input end (IN) of the first chip A31 of the third phase high side drive is connected with the W-phase high side signal input end (IN WH ) of the power module; the power supply end (VB) of the second chip A32 of the third phase high side drive is connected with the W-phase high side drive floating power supply end (V BW) connected, the W-phase high-side control signal output end (OUTWH) of the second chip A32 of the third-phase high-side drive is connected with the control end of the third high-side transistor Q13, and the floating ground end (VS) of the second chip A32 of the third-phase high-side drive is connected with the W-phase high-side drive floating power supply end (V SW ) of the power module and the first end of the third high-side transistor Q13. There are two wires between the first chip A31 of the third-phase high-side drive and the second chip A32 of the third-phase high-side drive, which are used to transmit the electrical signals (sine analog signals) between the low-voltage side and the high-voltage side. The first end of the third high-side transistor Q13 is connected with the W-phase output end (W) of the power module, and the second end of the third high-side transistor Q13 is connected with the direct current power supply positive end (P).

[0065] The CSC end of the low-side drive chip A4 is connected with the overcurrent detection input end (C SC ) of the power module, the VOT end of the low-side drive chip A4 is connected with the temperature signal output end (V OT ) of the power module, the VFO end of the low-side drive chip A4 is connected with the fault alarm signal output end (V FO ) of the power module, the INWL end of the low-side drive chip A4 is connected with the W-phase low-side signal input end (IN WL ) of the power module, the INVL end of the low-side drive chip A4 is connected with the V-phase low-side signal input end (IN VL ) of the power module, the INUL end of the low-side drive chip A4 is connected with the U-phase low-side signal input end (IN UL ) of the power module, the COM end of the low-side drive chip A4 is connected with the common ground end (Com) of the power module, the VCC end of the low-side drive chip A4 is connected with the low-side power supply end (V CCL ) of the power module, the U-phase low-side control signal output end (OUTUL) of the low-side drive chip A4 is connected with the control end of the first low-side transistor Q21, the V-phase low-side control signal output end (OUTVL) of the low-side drive chip A4 is connected with the control end of the second low-side transistor Q22, and the W-phase low-side control signal output end (OUTWL) of the low-side drive chip A4 is connected with the control end of the third low-side transistor Q23.

[0066] The first end of the first low-side transistor Q21 is connected with the U-phase direct current power supply negative end (N U ) of the power module, the second end of the first low-side transistor Q21 is connected with the U-phase output end (U) of the power module; the first end of the second low-side transistor Q22 is connected with the V-phase direct current power supply negative end (N V ) of the power module, the second end of the second low-side transistor Q22 is connected with the V-phase output end (V) of the power module; the first end of the third low-side transistor Q23 is connected with the W-phase direct current power supply negative end (N WThe second end of the third low-side transistor Q23 is connected to the W output end (W).

[0067] Further, the high-side transistors and the low-side transistors in the embodiment can be silicon carbide MOS devices. When the transistors are MOS devices, the first end of the transistor is the source, the second end is the drain, and the control end is the gate. When the transistors are IGBT devices, the first end of the transistor is the emitter, the second end is the collector, and the control end is the gate.

[0068] Figure 1 The power module in the embodiment includes a plurality of pins, and the pin names and descriptions are shown in the following table.

[0069] Table 1. Pin names and descriptions of the power module

[0070] Pin name Description Com Common ground V BU ]]> U-phase high-side drive floating power supply end V SU ]]> U-phase high-side drive floating power supply ground end V BV ]]> V-phase high-side drive floating power supply end V SV ]]> V-phase high-side drive floating power supply ground end V BW ]]> W-phase high-side drive floating power supply end V SW ]]> W-phase high-side drive floating power supply ground end IN UH ]]> U-phase high-side signal input end IN VH ]]> V-phase high-side signal input end IN WH ]]> W-phase high-side signal input end V CCUH ]]> U-phase power supply end V CCVH ]]> V-phase power supply end V CCWH ]]> W-phase power supply end IN UL ]]> U-phase low-side signal input end IN VL ]]> V-phase low-side signal input end IN WL ]]> W-phase low-side signal input end V CCL ]]> Low-side power supply end V FO ]]> Fault alarm signal output end [C FO ]]> Fault time adjustment capacitor input end C SC ]]> Overcurrent detection input end V OT ]]> Temperature signal output end [0000001] N[0000002] U [0000003] ​ U-phase DC power supply negative end

[0010] N V ]]> V-phase DC power supply negative end <![CDATA[N W ]]> W-phase DC power supply negative end U U-phase output end V V-phase output end W W-phase output end P DC power supply positive end

[0071] Table 2. Chip names and descriptions of the power module

[0072] Chip name Description Q11 First high-side transistor Q12 Second high-side transistor Q13 Third high-side transistor A11 First chip of first-phase high-side drive A12 Second chip of first-phase high-side drive A21 First chip of second-phase high-side drive A22 Second chip of second-phase high-side drive A31 First chip of third-phase high-side drive A32 Second chip of third-phase high-side drive Q21 First low-side transistor Q22 Second low-side transistor Q23 Third low-side transistor A4 Low-side drive chip

[0073] The second end of the first high-side transistor Q11 is connected to the second end of the second high-side transistor Q12 and the second end of the third high-side transistor Q13, and is connected to the DC power supply positive end (P) of the power module.

[0074] The common ground ends of the first chip A11 of the first-phase high-side drive, the first chip A21 of the second-phase high-side drive, the first chip A31 of the third-phase high-side drive, and the low-side drive chip A4 are connected to each other and to the common ground end (Com) of the power module, i.e., the four chips are grounded in common to reduce the number of pins.

[0075] As shown in Figure 2 The power module includes a lead frame and a plastic package. The lead frame includes a plurality of base islands and a plurality of pins. The plastic package encapsulates the base islands in the lead frame and the chips on the lead frame, and exposes at least part of the plurality of pins to the outside to connect with external circuits. The plastic package includes opposite first and second side edges 11 and 12, and opposite third and fourth side edges 13 and 14. The third and fourth side edges 13 and 14 extend in the length direction. The first and second side edges 11 and 12 are perpendicular to the third side edge 13 and extend in the width direction. Exemplarily, the distance between the first and second side edges 11 and 12 of the plastic package is the length of the plastic package (the product length of the power module). The plurality of pins of the power module extend outward from the third and fourth side edges of the plastic package. The semicircular holes in the first and second side edges of the plastic package are used to install two left and right screws to fix the power module on the heat sink.

[0076] Compared with Figure 1In the circuit diagram shown, the NC1-NC7 support structures are also shown in the schematic diagram of the package of the power module, wherein the NC1-NC7 support structures provide support for the corresponding base islands, and the corresponding base islands of the NC1-NC7 support structures are used to provide transitions for wire bonding (setting bonding wires) of control terminals of high-side transistors and low-side transistors.

[0077] In the pin structure of the package structure of the power module, the W-phase DC power negative terminal (NW), the V-phase DC power negative terminal (NV), the U-phase DC power negative terminal (NU), the W-phase output terminal (W), the V-phase output terminal (V), the U-phase output terminal (U), and the DC power positive terminal (P) are located at the fourth side edge 14 of the plastic package body. In the pin structure of the package structure of the power module, the low-side power terminal (VCCL), the common ground terminal (COM), the W-phase low-side signal input terminal (INML), the V-phase low-side signal input terminal (INVL), the U-phase low-side signal input terminal (INUL), the fault alarm signal output terminal (VFO), the temperature signal output terminal (VOT), the overcurrent detection input terminal (CSC), the W-phase high-side signal input terminal (INWH), the W-phase power supply terminal (VCCH), the W-phase high-side drive floating power supply terminal (VBW), the W-phase high-side drive floating power supply ground terminal (VSW), the V-phase high-side signal input terminal (INVH), the V-phase power supply terminal (VCCH), the V-phase high-side drive floating power supply terminal (VBV), the V-phase high-side drive floating power supply ground terminal (VSV), the U-phase high-side signal input terminal (INUH), the U-phase power supply terminal (VCCH), the U-phase high-side drive floating power supply terminal (VBU), and the U-phase high-side drive floating power supply ground terminal (VSU) are located at the third side edge 13 of the plastic package body. The high-voltage pins of the power module include: the W-phase high-side drive floating power supply terminal (VBW), the W-phase high-side drive floating power supply ground terminal (VSW), the V-phase high-side drive floating power supply terminal (VBV), the V-phase high-side drive floating power supply ground terminal (VSV), the U-phase high-side drive floating power supply terminal (VBU), the U-phase high-side drive floating power supply ground terminal (VSU), the DC power positive terminal (P), the U-phase output terminal (U), the V-phase output terminal (V), and the W-phase output terminal (W).

[0078] The first chip A11 of the first phase high side drive, the first chip A21 of the second phase high side drive, the first chip A31 of the third phase high side drive and the low side drive chip A4 are located on the first base island 110 of the lead frame. The first base island 110 is located above the ceramic substrate 100. The first chip A11 of the first phase high side drive, the first chip A21 of the second phase high side drive, the first chip A31 of the third phase high side drive and the low side drive chip A4 are electrically connected to the first base island 110 by wire bonding. The first end of the first base island 110 extends to the third side edge 13 of the plastic package, and the common ground end COM is extended. The second end of the first base island 110 extends to the second side edge 12 of the plastic package through the seventh support structure NC7, which provides support for the first base island 110.

[0079] The lead frame further comprises a second base island 120, a third base island 130 and a fourth base island 140 which are independent of each other. The second chip A12 of the first phase high side drive is located on the second base island 120 of the lead frame, the second chip A22 of the second phase high side drive is located on the third base island 130 of the lead frame, and the second chip A32 of the third phase high side drive is located on the fourth base island 140 of the lead frame.

[0080] The second base island 120, the third base island 130 and the fourth base island 140 are located between the first base island 110 and the third side edge 13. The first chip of the high side drive and the second chip of the corresponding phase high side drive are arranged along the length direction of the plastic package.

[0081] A first transition base island 121 is provided near the second chip A12 of the first phase high side drive, a second transition base island 131 is provided near the second chip A22 of the second phase high side drive, and a third transition base island 141 is provided near the second chip A32 of the third phase high side drive. The first transition base island 121, the second transition base island 131 and the third transition base island 141 are adjacent to the second base island 120, the third base island 130 and the fourth base island 140 respectively.

[0082] The U-phase high side control signal output end (OUTUH) of the second chip A12 of the first phase high side drive is wire-bonded to the first transition base island 121, and the first transition base island 121 is wire-bonded to the control end of the first high side transistor Q11, so as to realize the electrical connection between the U-phase high side control signal output end (OUTUH) of the second chip A12 of the first phase high side drive and the control end of the first high side transistor Q11.

[0083] The V-phase high-side control signal output end (OUTVH) of the second chip A22 of the second-phase high-side drive is wired to the second transition base island 131, and the second transition base island 131 is wired to the control end of the second high-side transistor Q12, so as to realize the electrical connection between the V-phase high-side control signal output end (OUTVH) of the second chip A22 of the second-phase high-side drive and the control end of the second high-side transistor Q12.

[0084] The W-phase high-side control signal output end (OUTWH) of the second chip A32 of the third-phase high-side drive is wired to the third transition base island 141, and the third transition base island 141 is wired to the control end of the third high-side transistor Q13, so as to realize the electrical connection between the W-phase high-side control signal output end (OUTWH) of the second chip A32 of the third-phase high-side drive and the control end of the third high-side transistor Q13.

[0085] The U-phase low-side control signal output end (OUTUL), the V-phase low-side control signal output end (OUTVL), and the W-phase low-side control signal output end (OUTWL) of the low-side drive chip A4 are respectively wired to different transition base islands and are wired to the control ends of the corresponding low-side transistors via the transition base islands. Specifically, a fourth transition base island 111, a fifth transition base island 112, and a sixth transition base island 113 are arranged close to the low-side drive chip A4. The fourth transition base island 111, the fifth transition base island 112, and the sixth transition base island 113 are located around the low-side drive chip A4. The U-phase low-side control signal output end (OUTUL) of the low-side drive chip is wired to the fourth transition base island 111, and the fourth transition base island 111 is wired to the control end of the first low-side transistor Q21, so as to realize the electrical connection between the OUTUL end of the low-side drive chip A4 and the control end of the first low-side transistor Q21.

[0086] The V-phase low-side control signal output end (OUTVL) of the low-side drive chip A4 is wired to the fifth transition base island 112, and the fifth transition base island 112 is wired to the control end of the second low-side transistor Q22, so as to realize the electrical connection between the V-phase low-side control signal output end (OUTVL) of the low-side drive chip A4 and the control end of the second low-side transistor Q22.

[0087] The W-phase low-side control signal output end (OUTWL) of the low-side drive chip A4 is wired to the sixth transition base island 113, and the sixth transition base island 113 is wired to the control end of the third low-side transistor Q23, so as to realize the electrical connection between the W-phase low-side control signal output end (OUTWL) of the low-side drive chip A4 and the control end of the third low-side transistor Q23.

[0088] The first, second and third transition base islands 121, 131, 141 extend towards the third side edge of the plastic package by first, second and third support structures NC1, NC2, NC3, respectively.

[0089] The fourth transition base island 111 extends towards the third side edge 13 of the plastic package by a fourth support structure NC4.

[0090] The fifth and sixth transition base islands 112, 113 extend towards the first side edge 11 of the plastic package by fifth and sixth support structures NC5, NC6, respectively.

[0091] Preferably, at least one or all of the support structures extending outside the plastic package of the power module will be cut off so that the edges of the support structures are flush with the edges of the side edges of the plastic package.

[0092] The first end of the low-side transistor and the first end of the high-side transistor are both connected to a respective pin of the power module by wirebonds.

[0093] The first high-side transistor Q11, the second high-side transistor Q12, the third high-side transistor Q13, the first low-side transistor Q21, the second low-side transistor Q22 and the third low-side transistor Q23 are arranged from right to left, wherein the first high-side transistor Q11, the second high-side transistor Q12 and the third high-side transistor Q13 are located on the fifth base island 150, and the fifth base island 150 is connected with the direct current power supply positive terminal (P) of the power module; the first end of the first high-side transistor Q11, the first end of the second high-side transistor Q12 and the first end of the third high-side transistor Q13 are respectively connected with the U-phase output terminal (U), the V-phase output terminal (V) and the W-phase output terminal (W) of the power module through the seventh transition base island 151, the eighth transition base island 152 and the ninth transition base island 153 respectively. The first low-side transistor Q21 is located on the sixth base island 160, and the sixth base island 160 is connected with the U-phase output terminal (U) of the power module; the second low-side transistor Q22 is located on the seventh base island 170, and the seventh base island 170 is connected with the V-phase output terminal (V) of the power module; the third low-side transistor Q23 is located on the eighth base island 180, and the eighth base island 180 is connected with the W-phase output terminal (W) of the power module; the first low-side transistor Q21, the second low-side transistor Q22 and the third low-side transistor Q23 are respectively connected with the U-phase direct current power supply negative terminal (NU), the V-phase direct current power supply negative terminal (NV) and the W-phase direct current power supply negative terminal (NW) of the power module through the tenth transition base island 161, the eleventh transition base island 171 and the twelfth transition base island 181. The power module, for example, includes twenty base islands, wherein the fifth base island 150, the sixth base island 160, the seventh base island 170, the eighth base island 180, the seventh transition base island 151, the eighth transition base island 152, the ninth transition base island 153, the tenth transition base island 161, the eleventh transition base island 171 and the twelfth transition base island 181 are located on the same ceramic substrate 100, and the transition base islands are arranged to reduce the distance of single wire bonding (bonding wire). Specifically, the seventh transition base island 151, the eighth transition base island 152, the ninth transition base island 153, the tenth transition base island 161, the eleventh transition base island 171 and the twelfth transition base island 181 are arranged between the transistor and the fourth side edge of the plastic package along the length direction of the plastic package. For example, the seventh transition base island 151 is located below the first high-side transistor Q11, the eighth transition base island 152 is located below the second high-side transistor Q12, the ninth transition base island 153 is located below and left of the third high-side transistor Q13, the tenth transition base island 161 is located below and left of the first low-side transistor Q21, the eleventh transition base island 171 is located below and left of the second low-side transistor Q22, and the twelfth transition base island 181 is located below and left of the third low-side transistor Q23. The above transition base islands are, for example, located on the side closer to the pin or the position closer to the pin of the corresponding transistor.The transition base island is arranged between the transistor and the fourth side edge, so that the corresponding transistor is connected with the corresponding transition base island through the bonding wire, and then the corresponding transition base island is connected with the corresponding pin of the fourth side edge through the bonding wire again, thereby avoiding the problem of too long single bonding (setting the bonding wire), reducing the process difficulty, and improving the product reliability.

[0094] The second base island extends a U-phase high-side drive suspension power supply ground end (VSU) to the third side edge of the plastic package, the third base island extends a VSV pin to the third side edge of the plastic package, the fourth base island extends a VSW pin to the third side edge of the plastic package, and the second chip A12 of the first-phase high-side drive is located on the second base island, the second chip A22 of the second-phase high-side drive is located on the third base island, and the second chip A32 of the third-phase high-side drive is located on the fourth base island.

[0095] The second chip A12 of the first-phase high-side drive is located on the right side of the first chip A11 of the first-phase high-side drive, the second chip A22 of the second-phase high-side drive is located on the right side of the low-voltage side chip A21 of the high-voltage side of the second high-side drive, and the second chip A32 of the third-phase high-side drive is located on the right side of the low-voltage side chip A31 of the high-voltage side of the third high-side drive.

[0096] Further, Figure 3 A packaging schematic diagram of a power module of a second embodiment of the utility model is shown, the second embodiment is similar to the first embodiment, the circuit diagram of the second embodiment is same with the first embodiment, and details are not repeated again, and the difference between the second embodiment and the first embodiment is that, in the second embodiment, the mounting of the first chip of the high-side drive and the second chip of the high-side drive of the same phase is rotated by 90 DEG compared with the first embodiment, that is, the first chip of the high-side drive and the second chip of the high-side drive of the same phase are arranged side by side along the width direction of the power module, and compared with the first embodiment, the bonding wire is more convenient and reliable in the scheme of the second embodiment.

[0097] The first chip A11 of the first phase high side drive, the first chip A21 of the second phase high side drive, the first chip A31 of the third phase high side drive and the low side drive chip A4 are located on the first base island 110 of the lead frame. The first chip A11 of the first phase high side drive, the first chip A21 of the second phase high side drive and the first chip A31 of the third phase high side drive are electrically connected to the first base island 110, and the first end of the first base island 110 extends to the third side edge 13 of the plastic package to form the common ground COM of the power module. The second end of the first base island 110 extends to the second side edge 12 of the plastic package through the seventh support structure NC7. The lead frame further comprises a second base island 120, a third base island 130 and a fourth base island 140 which are independent of each other. The second chip A12 of the first phase high side drive is located on the second base island 120 of the lead frame, the second chip A22 of the second phase high side drive is located on the third base island 130 of the lead frame, and the second chip A32 of the third phase high side drive is located on the fourth base island 140 of the lead frame. The second base island 120, the third base island 130 and the fourth base island 140 are located between the first base island 110 and the third side edge 13.

[0098] The first chip of the high side drive and the second chip of the high side drive of the corresponding phase are arranged along the width direction of the plastic package.

[0099] The lead frame further comprises a fifth base island 150, and the high side transistors are located on the fifth base island 150. The high side transistors include a first high side transistor Q11, a second high side transistor Q12 and a third high side transistor Q13.

[0100] The lead frame further comprises a sixth base island 160, a seventh base island 170 and an eighth base island 180. The low side transistors include a first low side transistor Q21, a second low side transistor Q22 and a third low side transistor Q23. The first low side transistor Q21 is located on the sixth base island 160, the second low side transistor Q22 is located on the seventh base island 170, and the third low side transistor Q23 is located on the eighth base island 180.

[0101] The U-phase high-side control signal output end (OUTUH) of the second chip A12 of the first-phase high-side drive is electrically connected to the first transition base island 121, and the first transition base island 121 is electrically connected to the control end of the first high-side transistor Q11; the V-phase high-side control signal output end (OUTVH) of the second chip A22 of the second-phase high-side drive is electrically connected to the second transition base island 131, and the second transition base island 131 is electrically connected to the control end of the second high-side transistor Q12; the W-phase high-side control signal output end (OUTWH) of the second chip A32 of the third-phase high-side drive is electrically connected to the third transition base island 141, and the third transition base island 141 is electrically connected to the control end of the third high-side transistor Q13. The first transition base island 121, the second transition base island 131, and the third transition base island 141 are adjacent to the second base island 120, the third base island 130, and the fourth base island 140, respectively.

[0102] The U-phase low-side control signal output end (OUTUL) of the low-side drive chip A4 is electrically connected to the fourth transition base island 111, and the fourth transition base island 111 is electrically connected to the control end of the first low-side transistor Q21; the V-phase low-side control signal output end (OUTVL) of the low-side drive chip A4 is electrically connected to the fifth transition base island 112, and the fifth transition base island 112 is electrically connected to the control end of the second low-side transistor Q22; the W-phase low-side control signal output end (OUTWL) of the low-side drive chip A4 is electrically connected to the sixth transition base island 113, and the sixth transition base island 113 is electrically connected to the control end of the third low-side transistor Q23. The fourth transition base island 111, the fifth transition base island 112, and the sixth transition base island 113 are located around the low-side drive chip A4.

[0103] The first transition base island 121, the second transition base island 131, and the third transition base island 141 extend to the third side edge 13 of the plastic package body through the first support structure NC1, the second support structure NC2, and the third support structure NC3, respectively.

[0104] The fourth transition base island 111 extends to the third side edge 13 of the plastic package body through the fourth support structure NC4; the fifth transition base island 112 and the sixth transition base island 113 extend to the first side edge 11 of the plastic package body through the fifth support structure NC5 and the sixth support structure NC6, respectively.

[0105] The first end of the first high-side transistor Q11 is electrically connected to the seventh transition base island 151, the seventh transition base island 151 is electrically connected to the first phase output end U of the power module; the first end of the second high-side transistor Q12 is electrically connected to the eighth transition base island 152, the eighth transition base island 152 is electrically connected to the second phase output end V of the power module; the first end of the third high-side transistor Q13 is electrically connected to the ninth transition base island 153, the ninth transition base island 153 is electrically connected to the third phase output end W of the power module; the first end of the first low-side transistor Q21 is electrically connected to the tenth transition base island 161, the tenth transition base island 161 is electrically connected to the first phase DC power supply negative end NU of the power module; the first end of the second low-side transistor Q22 is electrically connected to the eleventh transition base island 171, the eleventh transition base island 171 is electrically connected to the second phase DC power supply negative end NV of the power module; the first end of the third low-side transistor Q23 is electrically connected to the twelfth transition base island 181, and the twelfth transition base island 181 is electrically connected to the third phase DC power supply negative end NW of the power module.

[0106] The seventh transition base island 151, the eighth transition base island 152, the ninth transition base island 153, the tenth transition base island 161, the eleventh transition base island 171 and the twelfth transition base island 181 are arranged between the transistor and the fourth side edge 14 of the plastic package along the length direction of the plastic package.

[0107] Figure 4 The circuit structure schematic diagram of the power module of the third embodiment of the utility model is shown; the circuit structure of the third embodiment is similar to the first embodiment, and the difference lies in that the low-side drive chip A4 increases the fault time adjustment capacitor input end CFO, and the support structure NC10 is increased on the right side; wherein, the fault time adjustment capacitor input end CFO of the low-side drive chip A4 is connected with the fault time adjustment capacitor input end CFO of the corresponding power module, FO The fault time adjustment capacitor input end CFO can be used for adjusting the fault output duration, the support structure NC10 is not electrically connected with the chip or the transistor inside the power module, for example, and only serves as a support structure, and can play a supporting and stabilizing role when the power module is mounted and welded. FO

[0108] Figure 5 The packaging schematic diagram of the power module of the third embodiment of the utility model is shown. Figure 5 ​As shown, the lead frame of the power module of the third embodiment includes twenty-one base islands, but the size is larger than that of the first embodiment, so a support structure NC10 is additionally provided for support. In the power module of the third embodiment, the high-side transistors (the first high-side transistor Q11, the second high-side transistor Q12, and the third high-side transistor Q13) are located on the fifth base island 150, and in order to avoid excessively long single wire bonding (the first high-side transistor Q11 to the U pin, the second high-side transistor Q12 to the V pin, and the third high-side transistor Q13 to the W pin), the seventh transition base island 151, the eighth transition base island 152, and the ninth transition base island 153 are provided as transition base islands for wire bonding (the first high-side transistor Q11 is first wire-bonded to the seventh transition base island 151 and then wire-bonded from the seventh transition base island 151 to the U pin, the second high-side transistor Q12 is first wire-bonded to the eighth transition base island 152 and then wire-bonded from the eighth transition base island 152 to the V pin, and the third high-side transistor Q13 is first wire-bonded to the ninth transition base island 153 and then wire-bonded from the ninth transition base island 153 to the W pin); the three low-side transistors (the first low-side transistor Q21, the second low-side transistor Q22, and the third low-side transistor Q23) are located on the sixth base island 160, the seventh base island 170, and the eighth base island 180, respectively, and similarly, the tenth transition base island 161, the eleventh transition base island 171, and the twelfth transition base island 181 are provided as transition base islands (the first low-side transistor Q21 is first wire-bonded to the tenth transition base island 161 and then to the NU pin, the second low-side transistor Q22 is first wire-bonded to the eleventh transition base island 171 and then to the NV pin, and the third low-side transistor Q23 is first wire-bonded to the twelfth transition base island 181 and then to the NW pin). The low-side drive chip A4 and the first chips (A11, A21, and A31) of the high-side drive are located on the first base island 110. The fifth base island, the sixth base island, the seventh base island, the eighth base island, the seventh transition base island, the eighth transition base island, the ninth transition base island, the tenth transition base island, the eleventh transition base island, and the twelfth base island are all located on the ceramic substrate 100, the second chip A12 of the first-phase high-side drive is located on the second base island 120, the second chip A22 of the second-phase high-side drive is located on the third base island 130, the second chip A32 of the third-phase high-side drive is located on the fourth base island 150, and the second base island 120, the third base island 130, and the fourteenth base island 140 extend the VSU pin, the VSV pin, and the VSW pin to the third side of the plastic package, respectively.

[0109] The extension of the power module along the width direction of the plastic package is referred to as the first direction, and the extension along the length direction is referred to as the second direction. The first base island 110 is close to the third side edge 13; the eighth base island 180 is close to the first side edge 11 and is located at the middle position in the first direction; the fifth base island 150 is close to the second side edge 12 and is located at the middle position in the first direction; three high-side transistors (Q11, Q12, Q13) are arranged on the fifth base island 150 along the second direction; the twelfth transition base island 181 is surrounded by the eighth base island 180, the eleventh transition base island 171 is surrounded by the seventh base island 170, the tenth transition base island 161 is surrounded by the sixth base island 160, and the ninth transition base island 153, the eighth transition base island 152, and the seventh transition base island 151 are surrounded by the fifth base island 150, and the above-mentioned transition base islands are arranged in sequence along the second direction.

[0110] The lead frame extends the first direct-current power supply positive terminal P to the fourth side edge 14 of the plastic package, and the fifth base island 150 is connected to the P pin through welding; the lead frame extends the U pin, the V pin, and the W pin to the fourth side edge 14 of the plastic package, respectively, and the sixth base island 160, the seventh base island 170, and the eighth base island 180 are connected to the U pin, the V pin, and the W pin through welding, respectively; the first base island 110 extends the ground terminal COM pin to the third side edge 13 of the plastic package. Among them, the support structures NC1-NC10 are not electrically connected to the outside, and can be regarded as invalid pins; the remaining pins are all effective pins.

[0111] It is particularly pointed out that the high-side drive first chip and the high-side drive second chip in the application are isolated, wherein A11, A21, and A31 are the high-side drive first chip of the U, V, and W phases, and are located on the first base island; A12, A22, and A32 are the high-side drive second chip of the U, V, and W phases, and are located on the second base island, the third base island, and the fourth base island, respectively; the second base island extends the VSU pin to the third side edge of the plastic package, the third base island extends the VSV pin to the third side edge of the plastic package, and the fourth base island extends the VSW pin to the third side edge of the plastic package. The high-side drive first chip and the high-side drive second chip are connected through a bonding wire. The high-side drive first chip A11, A21, and A31 of each phase is connected to the VCCH (U / V / W) and IN(U / V / W)H pins of the corresponding power module through a bonding wire, respectively; the high-side drive second chip (A12, A22, and A32) of each phase is connected to the VS(U / V / W), VB(U / V / W), and NC(1 / 3 / 5) of the corresponding power module through a bonding wire, respectively.

[0112] The control ends of the high-side transistors Q11, Q12 and Q13 are connected with the support structures NC1, NC3 and NC5 respectively through bonding wires, and the first ends of the high-side transistors Q11, Q12 and Q13 are connected with the VSU, VSV and VSW pins respectively through bonding wires; the second ends of the high-side transistors Q11, Q12 and Q13 are connected with the P pin through the fifth base island.

[0113] The control ends of the low-side transistors Q21, Q22 and Q23 are connected with the support structures NC7, NC9 and NC8 respectively through bonding wires; the second ends of the low-side transistors Q21, Q22 and Q23 are connected with the U pin, V pin and W pin respectively through the sixth base island, the seventh base island and the eighth base island; the first ends of the low-side transistors Q21, Q22 and Q23 are connected with the NU, NV and NW pins respectively through bonding wires.

[0114] Figure 6 The circuit structure schematic diagram of the high-side drive unit of each phase of the utility model is shown; the circuit structures of the high-side drive units of each phase in the utility model are similar, so the first phase high-side drive unit shown in the Figure 6 is taken as an example for description.

[0115] The first phase high-side drive unit comprises a first chip A11 of the first phase high-side drive and a second chip A12 of the first phase high-side drive, wherein the first chip A11 of the first phase high-side drive comprises a first logic circuit and a first isolation unit, and the second chip A12 of the first phase high-side drive comprises a second logic and drive circuit and a second isolation unit. The first isolation unit and the second isolation unit are connected through interconnection lines.

[0116] The first logic circuit is connected between a power supply end VCC and a common ground end COM, receives a high-side input signal IN of a corresponding phase, modulates the high-side input signal into a first carrier signal and a second carrier signal, and converts the first carrier signal and the second carrier signal into a third carrier signal and a fourth carrier signal via the first isolation unit and the second isolation unit.

[0117] The second logic and drive circuit demodulates the third carrier signal and the fourth carrier signal into a square wave signal synchronous with the high-side input signal of the corresponding phase and outputs the square wave signal to an output port OUT.

[0118] Figure 7 to Figure 9 The schematic diagrams of three embodiments of the first isolation unit and the second isolation unit in the utility model are shown respectively, wherein, as shown in Figure 7 , the first isolation unit and the second isolation unit are, for example, on-chip transformers, which convert the first carrier signal and the second carrier signal into the third carrier signal and the fourth carrier signal through electromagnetic induction.

[0119] As shown in Figure 8As shown, the first isolation unit and the second isolation unit are high-voltage plate capacitors, which convert the first carrier signal and the second carrier signal into the third carrier signal and the fourth carrier signal through the direct current blocking and alternating current passing of the capacitors.

[0120] As shown, Figure 9 As shown, the first isolation unit and the second isolation unit are optocouplers, which convert the first carrier signal and the second carrier signal into the third carrier signal and the fourth carrier signal through the photoelectric effect, and no interconnection line is needed to connect between the two isolation units.

[0121] According to the packaging structure and driving circuit of the power module, the high-side driving chip adopts an isolation design, and each phase high-side driving chip is divided into a first chip of high-side driving and a second chip of high-side driving which are isolated from each other, the high-side driving chip of the utility model is an isolated chip, on the one hand, the bootstrap capacitor does not need to be charged to realize the power supply of the high-side driving chip, but an independent power supply is adopted, thereby avoiding the problem of under-voltage caused by insufficient charging of the bootstrap capacitor under high switching frequency; on the other hand, the first chip of high-side driving of the isolated high-side driving chip is isolated from the second chip of high-side driving of the corresponding phase, so that the voltage fluctuation generated by the floating ground end of the second chip of high-side driving has little influence on the first chip of high-side driving under the scene of fast switching speed, and thus the control signal transmitted from the low-voltage side to the high-voltage side is not affected, and the high-side transistor is not misoperated.

[0122] Further, the power module also adopts a silicon carbide MOS, which is combined with the isolated high-side driving chip, further improving the switching frequency of the power module.

[0123] Further, the transition base island is designed to reduce the single wire bonding distance and avoid the risk of wire collapse caused by too long wire bonding distance.

[0124] Further, the isolated high-side driving chip is arranged on the base island of the lead frame instead of being integrated by using a circuit board, thereby avoiding the delamination of the circuit board and the pollution of other materials to the power module, and improving the reliability and service life of the power module.

[0125] It should be noted that, in this document, the terms "first" and "second", and the like, merely distinguish one entity or action from another without necessarily requiring or implying any actual relationship or order between such entities or actions. Moreover, the terms "comprises", "comprising", or any other variation thereof, are intended to cover a non-exclusive inclusion, such that a process, method, article, or apparatus that comprises a list of elements does not include only those elements but can also include other elements not expressly listed or inherent to such process, method, article, or apparatus. Without further limitation, an element preceded by "comprises a" does not, without more limitations, preclude the existence of additional identical elements in the process, method, article, or apparatus that comprises the recited element.

[0126] In accordance with the embodiments of the present application as described above, these embodiments do not describe all the details of the application, nor limit the application to the specific embodiments described. Obviously, many modifications and variations are possible in light of the above teachings. The embodiments were chosen and described in order to explain the principles of the application and its practical application to thereby enable others skilled in the art to best utilize the application and various implementations and with modifications as suitable to the particular use contemplated. The application is only limited by the claims and the full scope of equivalents thereof.

Claims

1. A packaging structure of a power module, characterized by, Comprising: a lead frame comprising a plurality of base islands and a plurality of pins; a high-side transistor, a low-side transistor, a high-side driving unit and a low-side driving unit; a plastic package comprising opposite first and second side edges extending in a width direction of the plastic package, and opposite third and fourth side edges extending in a length direction of the plastic package; the high-side driving unit comprises a first chip of each-phase high-side driving and a second chip of each-phase high-side driving, the first chip of high-side driving and the second chip of high-side driving of corresponding phase are isolated from each other, and the high-side driving unit drives the high-side transistor; the low-side driving unit drives the low-side transistor. the first chip of high-side driving and the second chip of high-side driving of corresponding phase are located on different base islands of the lead frame.

2. The package structure of claim 1, wherein, 3. The package structure of claim 1, wherein the first chip of high-side driving of each phase comprises a first chip of first-phase high-side driving, a first chip of second-phase high-side driving and a first chip of third-phase high-side driving; the second chip of high-side driving of each phase comprises a second chip of first-phase high-side driving, a second chip of second-phase high-side driving and a second chip of third-phase high-side driving; the high-side driving unit comprises a first high-side driving unit, a second high-side driving unit and a third high-side driving unit, the first high-side driving unit comprises the first chip of first-phase high-side driving and the second chip of first-phase high-side driving, the second high-side driving unit comprises the first chip of second-phase high-side driving and the second chip of second-phase high-side driving, and the third high-side driving unit comprises the first chip of third-phase high-side driving and the second chip of third-phase high-side driving; the low-side driving unit is a low-side driving chip. the first chip of first-phase high-side driving, the first chip of second-phase high-side driving, the first chip of third-phase high-side driving and the low-side driving chip are located on a first base island of the lead frame.

4. The package structure of claim 3, wherein, the first chip of first-phase high-side driving, the first chip of second-phase high-side driving, the first chip of third-phase high-side driving are electrically connected to the first base island, and a first end of the first base island extends a common ground terminal to the third side edge of the plastic package. a second end of the first base island extends to the second side edge of the plastic package through a seventh support structure.

5. The package structure of claim 4, wherein, the lead frame further comprises a second base island, a third base island and a fourth base island which are independent of each other, the second chip of first-phase high-side driving is located on the second base island of the lead frame, the second chip of second-phase high-side driving is located on the third base island of the lead frame, and the second chip of third-phase high-side driving is located on the fourth base island of the lead frame.

6. The package structure of claim 5, wherein, the second base island, the third base island and the fourth base island are located between the first base island and the third side edge. the first chip of high-side driving and the second chip of high-side driving of corresponding phase are arranged in the length direction or the width direction of the plastic package.

7. The package structure of claim 5, wherein, ​ ​ 8. The package structure of claim 7, wherein, ​ 9. The package structure of claim 3, wherein, ​ 10. The package structure of claim 7, wherein, The lead frame further comprises a fifth base island, and the high-side transistors are located on the fifth base island, and the high-side transistors comprise a first high-side transistor, a second high-side transistor and a third high-side transistor; The lead frame further comprises a sixth base island, a seventh base island and an eighth base island, and the low-side transistors comprise a first low-side transistor, a second low-side transistor and a third low-side transistor, the first low-side transistor is located on the sixth base island, the second low-side transistor is located on the seventh base island, and the third low-side transistor is located on the eighth base island.

11. The package structure of claim 10, wherein, a first-phase high-side control signal output end of the second chip of the first-phase high-side drive is electrically connected to a first transition base island, and the first transition base island is electrically connected to a control end of the first high-side transistor; a second-phase high-side control signal output end of the second chip of the second-phase high-side drive is electrically connected to a second transition base island, and the second transition base island is electrically connected to a control end of the second high-side transistor; a third-phase high-side control signal output end of the second chip of the third-phase high-side drive is electrically connected to a third transition base island, and the third transition base island is electrically connected to a control end of the third high-side transistor.

12. The package structure of claim 11, wherein, The first transition base island, the second transition base island and the third transition base island are adjacent to the second base island, the third base island and the fourth base island respectively.

13. The package structure of claim 10, wherein, a first-phase low-side control signal output end of the low-side drive chip is electrically connected to a fourth transition base island, and the fourth transition base island is electrically connected to a control end of the first low-side transistor; a second-phase low-side control signal output end of the low-side drive chip is electrically connected to a fifth transition base island, and the fifth transition base island is electrically connected to a control end of the second low-side transistor; a third-phase low-side control signal output end of the low-side drive chip is electrically connected to a sixth transition base island, and the sixth transition base island is electrically connected to a control end of the third low-side transistor.

14. The package structure of claim 13, wherein, the fourth transition base island, the fifth transition base island and the sixth transition base island are located around the low-side drive chip.

15. The package structure of claim 11, wherein, the first transition base island, the second transition base island and the third transition base island extend to a third side edge of the plastic package body through a first support structure, a second support structure and a third support structure respectively.

16. The package structure of claim 13, wherein, the fourth transition base island extends to the third side edge of the plastic package body through a fourth support structure; the fifth transition base island and the sixth transition base island extend to a first side edge of the plastic package body through a fifth support structure and a sixth support structure respectively.

17. The package structure of claim 10, wherein, a first end of the first high-side transistor is electrically connected to a seventh transition base island, and the seventh transition base island is electrically connected to a first-phase output end of the power module; a first end of the second high-side transistor is electrically connected to an eighth transition base island, and the eighth transition base island is electrically connected to a second-phase output end of the power module; The first end of the third high-side transistor is electrically connected to a ninth transition base island, and the ninth transition base island is electrically connected to a third-phase output end of the power module; The first end of the first low-side transistor is electrically connected to a tenth transition base island, and the tenth transition base island is electrically connected to a first-phase direct-current power supply negative end of the power module; The first end of the second low-side transistor is electrically connected to an eleventh transition base island, and the eleventh transition base island is electrically connected to a second-phase direct-current power supply negative end of the power module; The first end of the third low-side transistor is electrically connected to a twelfth transition base island, and the twelfth transition base island is electrically connected to a third-phase direct-current power supply negative end of the power module.

18. The package structure of claim 17, wherein, The seventh transition base island, the eighth transition base island, the ninth transition base island, the tenth transition base island, the eleventh transition base island and the twelfth transition base island are arranged between the transistor and the fourth side edge of the plastic package along the length direction of the plastic package.

19. The package structure of claim 1, wherein, The plurality of pins include high-voltage pins, and the high-voltage pins include: a third-phase high-side drive floating power supply end, a third-phase high-side drive floating power supply ground end, a second-phase high-side drive floating power supply end, a second-phase high-side drive floating power supply ground end, a first-phase high-side drive floating power supply end, a first-phase high-side drive floating power supply ground end, a direct-current power supply positive end, a first-phase output end, a second-phase output end and a third-phase output end.

20. The package structure of claim 19, wherein, The third-phase high-side drive floating power supply end, the third-phase high-side drive floating power supply ground end, the second-phase high-side drive floating power supply end, the second-phase high-side drive floating power supply ground end, the first-phase high-side drive floating power supply end and the first-phase high-side drive floating power supply ground end are located on the third side edge of the plastic package. The third-phase high-side drive floating power supply end, the third-phase high-side drive floating power supply ground end, the second-phase high-side drive floating power supply end, the second-phase high-side drive floating power supply ground end, the first-phase high-side drive floating power supply end and the first-phase high-side drive floating power supply ground end are respectively closer to the second side edge than to the first side edge.

21. The package structure of claim 19, wherein, The direct-current power supply positive end, the first-phase output end, the second-phase output end and the third-phase output end are arranged on the fourth side edge of the plastic package in sequence, and the direct-current power supply positive end, the first-phase output end, the second-phase output end and the third-phase output end are respectively closer to the second side edge than to the first side edge.

22. The package structure of claim 1, wherein, The plurality of pins include low-voltage pins, part of the low-voltage pins are located on the third side edge, and the rest of the low-voltage pins are located on the fourth side edge, and the low-voltage pins are respectively closer to the first side edge than to the second side edge.

23. The package structure of claim 1, wherein, The first chip of the high-side drive and the second chip of the high-side drive of the corresponding phase are powered by the external power supply of the packaging structure.

24. The package structure of claim 1, wherein, At least part of the low-side transistors and the high-side transistors are silicon carbide transistors.

25. The package structure of claim 1, wherein, The first chip of the high-side drive includes a first logic circuit and a first isolation unit, and the second chip of the high-side drive of the corresponding phase includes a second logic and drive circuit and a second isolation unit, The first logic circuit is connected between the power supply end and the common ground end, receives the high-side input signal of the corresponding phase, and modulates the high-side input signal into a first carrier signal and a second carrier signal. The first logic circuit is connected between the power supply end and the common ground end, receives the high-side input signal of the corresponding phase, and modulates the high-side input signal into a first carrier signal and a second carrier signal. The first carrier signal and the second carrier signal are converted into a third carrier signal and a fourth carrier signal via a first isolation unit and a second isolation unit; The second logic and the drive circuit demodulate the third carrier signal and the fourth carrier signal into square wave signals synchronized with the high-side input signals of the corresponding phase and output to the output port.

26. The package structure of claim 25, wherein, The first isolation unit and the second isolation unit are connected by an interconnection line.

27. The package structure of claim 25, wherein, The first isolation unit and the second isolation unit are on-chip transformers which convert the first carrier signal and the second carrier signal into the third carrier signal and the fourth carrier signal through electromagnetic induction.

28. The package structure of claim 25, wherein, The first isolation unit and the second isolation unit are high-voltage flat capacitors which convert the first carrier signal and the second carrier signal into the third carrier signal and the fourth carrier signal through the direct current blocking alternating current of the capacitor.

29. The package structure of claim 25, wherein, The first isolation unit and the second isolation unit are optocouplers which convert the first carrier signal and the second carrier signal into the third carrier signal and the fourth carrier signal through the photoelectric effect.

30. The packaging structure of claim 10, wherein the control end of the first high-side transistor is connected to the first-phase high-side control signal output end of the second chip of the first-phase high-side drive, the second end of the first high-side transistor is connected to the positive end of the direct current power supply, and the first end of the first high-side transistor is connected to the first-phase high-side drive floating power supply ground end of the power module, the floating ground end of the second chip of the first-phase high-side drive, and the first-phase output end of the power module, and the power supply end of the second chip of the first-phase high-side drive is connected to the first-phase high-side drive floating power supply end of the power module; the control end of the second high-side transistor is connected to the second-phase high-side control signal output end of the second chip of the second-phase high-side drive, the second end of the second high-side transistor is connected to the positive end of the direct current power supply, and the first end of the second high-side transistor is connected to the second-phase high-side drive floating power supply ground end of the power module, the floating ground end of the second chip of the second-phase high-side drive, and the second-phase output end of the power module, and the power supply end of the second chip of the second-phase high-side drive is connected to the second-phase high-side drive floating power supply end of the power module; the control end of the third high-side transistor is connected to the third-phase high-side control signal output end of the second chip of the third-phase high-side drive, the second end of the third high-side transistor is connected to the positive end of the direct current power supply, and the first end of the third high-side transistor is connected to the third-phase high-side drive floating power supply ground end of the power module, the floating ground end of the second chip of the third-phase high-side drive, and the third-phase output end of the power module, and the power supply end of the second chip of the third-phase high-side drive is connected to the third-phase high-side drive floating power supply end of the power module.

31. The packaging structure of claim 30, wherein the power supply end of the first chip of the first-phase high-side drive is connected to the first-phase power supply end of the power module, and the signal input end of the first chip of the first-phase high-side drive is connected to the first-phase high-side signal input end of the power module. The power supply end of the first chip of the second-phase high-side drive is connected with the second-phase power supply end of the power module, and the signal input end of the first chip of the second-phase high-side drive is connected with the second-phase high-side signal input end of the power module; The power supply end of the first chip of the third-phase high-side drive is connected with the third-phase power supply end of the power module, and the signal input end of the first chip of the third-phase high-side drive is connected with the third-phase high-side signal input end of the power module; The common ground end of the first chip of the first-phase high-side drive, the first chip of the second-phase high-side drive and the first chip of the third-phase high-side drive is taken out as the common ground end of the power module.

32. A drive circuit, comprising: The package structure as claimed in any one of claims 1-31. The package structure as claimed in any one of claims 1-31.

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