Heat dissipation device and server

Abstract

The utility model relates to a heat dissipation device and a server. A heat dissipation device comprises a substrate used for being in contact with a device to be subjected to heat dissipation, and the substrate comprises a diamond copper layer and a copper layer at least wrapping a partial area of the diamond copper layer; and the reinforced heat dissipation part comprises a plurality of heat dissipation fins which protrude outwards from the surface of the copper layer and are arranged at intervals. According to the heat dissipation device, the heat dissipation requirement of a to-be-dissipated device (such as a chip) with higher power density is met through the diamond copper layer with better heat conductivity, the machining requirement of some complex shapes is met through the copper layer, and large-scale production and application can be carried out subsequently.

Description

TECHNICAL FIELD

[0001] The present application relates to the technical field of heat sinks, in particular to a heat dissipation device and a server. BACKGROUND

[0002] With the development of electronic devices such as servers towards high integration, miniaturization and high frequency, the requirement of chips on heat dissipation performance is getting higher and higher. At present, the heat flux density requirement of chips has reached 120W / cm2. Even if immersion phase change liquid cooling is used, it is difficult to maintain the core temperature of the chip at a relatively low temperature level. Therefore, how to solve the heat dissipation problem of high heat flux density chips has become a big difficulty.

[0003] In recent years, it has been found that diamond copper has a very high thermal conductivity, and if it is applied to a heat sink, the heat dissipation efficiency will be greatly improved. However, diamond copper has high hardness and is difficult to process, and complex shapes (such as enhanced boiling structures) cannot be formed on it, which makes it difficult to be mass-produced and applied in the field of heat dissipation. CONTENT OF THE UTILITY MODEL

[0004] Therefore, it is necessary to provide a heat dissipation device and a server. The heat dissipation device meets the heat dissipation requirement of a device (such as a chip) with higher power density by a diamond copper layer with better thermal conductivity, and meets the processing requirement of some complex shapes by a copper layer, which can be mass-produced and applied in the future.

[0005] A heat dissipation device, comprising:

[0006] a substrate for contacting a device to be cooled, wherein the substrate comprises a diamond copper layer and a copper layer covering at least part of the diamond copper layer; and

[0007] a reinforced heat dissipation part comprising a plurality of heat dissipation fins protruding from the surface of the copper layer and arranged at intervals.

[0008] In some embodiments, the copper layer covers all areas of the diamond copper layer.

[0009] Alternatively, the substrate comprises a contact surface for contacting the device to be cooled, and the copper layer covers the non-contact surface of the diamond copper layer except the contact surface.

[0010] In some embodiments, the ratio of the thickness of the diamond copper layer to the thickness of the substrate is a, and a≥0.7.

[0011] And / or, the thickness of the copper layer is b, and b is in the range of b≤1mm.

[0012] In some embodiments, the volume of the diamond copper layer accounts for at least 70% of the volume of the substrate.

[0013] In some embodiments, the heat dissipation device further comprises an assembly portion, which is arranged outside the substrate; wherein the assembly portion is assembled, welded or integrally formed with the substrate.

[0014] In some embodiments, the heat dissipation device further comprises a first assembly support arranged outside the reinforced heat dissipation portion, which is assembled, welded or integrally formed with the assembly portion;

[0015] When the first assembly support is assembled with the assembly portion, corresponding assembly holes are respectively arranged on the first assembly support and the assembly portion.

[0016] In some embodiments, the first assembly support is further provided with a connecting hole for fixing a server mainboard.

[0017] In some embodiments, the heat dissipation device further comprises a second assembly support, which is provided with a fluid inlet and a fluid outlet;

[0018] The second assembly support is assembled, welded or integrally formed with the assembly portion, and a cooling cavity is formed between the two, which is connected to the fluid inlet and the fluid outlet, and is used for accommodating the reinforced heat dissipation portion and a cooling fluid.

[0019] In some embodiments, the heat dissipation fins are provided with a plurality of protruding / recessed micro-nano structures.

[0020] A server, which comprises the heat dissipation device described above, further comprises a device to be cooled and a server mainboard, the device to be cooled is mounted on the server mainboard, the substrate is connected to the server mainboard and in contact with the device to be cooled.

[0021] In some embodiments, a closed accommodating cavity is formed between the substrate and the server mainboard, the device to be cooled comprises a chip accommodated in the accommodating cavity and welded to the server mainboard, one side of the substrate along its thickness direction is in heat transfer contact with the chip, and the other side is provided with the reinforced heat dissipation portion.

[0022] In some embodiments, the heat dissipation device further comprises an assembly portion arranged outside the substrate, and a ring-shaped seat connected between the assembly portion and the server mainboard, the server mainboard, the ring-shaped seat, the assembly portion and the substrate collectively enclose the accommodating cavity.

[0023] In some embodiments, the assembly portion is a copper plate, and the copper plate and the ring-shaped seat are bonded by a resin layer.

[0024] In some embodiments, the substrate and the chip are welded;

[0025] The substrate is configured with a back gold layer on the side close to the chip, and / or the chip is configured with a back gold layer on the side close to the substrate.

[0026] The heat dissipation device and the server, the substrate includes a diamond copper layer and a copper layer covering at least part of the diamond copper layer, wherein the diamond copper layer has excellent heat conduction performance, thereby improving the heat dissipation efficiency of the device to be cooled, the hardness of the copper layer is lower than that of the diamond copper layer, and the processing difficulty is lower, thereby meeting the subsequent processing and assembly precision requirements, and a plurality of convex heat dissipation fins arranged at intervals can be processed on the surface to form a reinforced heat dissipation part, thereby increasing the heat dissipation area and further improving the heat dissipation efficiency. In this way, through the cooperation of the diamond copper layer, the copper layer and the reinforced heat dissipation part, not only the heat dissipation demand of the device to be cooled (such as a chip) with higher power density can be met, but also the processing demand of some complex shapes can be met, and subsequent large-scale production application can be carried out. BRIEF DESCRIPTION OF DRAWINGS

[0027] Figure 1 It is a schematic diagram of the heat dissipation device in an embodiment of the present application.

[0028] Figure 2 It is a schematic diagram of the heat dissipation device in another embodiment of the present application.

[0029] Figure 3 It is a schematic diagram of the heat dissipation device in another embodiment of the present application.

[0030] Figure 4 It is a schematic diagram of the reinforced heat dissipation part in an embodiment of the present application.

[0031] Figure 5 It is a schematic diagram of the heat dissipation device in an embodiment of the present application (first assembly support).

[0032] Figure 6 It is a schematic diagram of the heat dissipation device in another embodiment of the present application (second assembly support).

[0033] Figure 7 It is a schematic diagram of the heat dissipation device and the chip connection in an embodiment of the present application.

[0034] REFERENCE NUMERALS:

[0035] 100, substrate; 110, diamond copper layer; 120, copper layer;

[0036] 200, reinforced heat dissipation part; 210, heat dissipation fin; 211, micro-nano structure;

[0037] 310, assembly part; 311, assembly hole; 320, first assembly support; 321, connecting hole; 330, second assembly support; 3321, fluid inlet; 3322, fluid outlet; 3323, cooling cavity;

[0038] 400, annular seat; 410, avoiding groove;

[0039] 510, device to be cooled; 520, server mainboard; 530, capacitor;

[0040] 610, thermal interface material layer; 620, resin layer;

[0041] 700, accommodating cavity. DETAILED DESCRIPTION

[0042] In order to make the above objectives, features and advantages of the present application more apparent, specific embodiments of the present application will be described in detail below with reference to the accompanying drawings. In the following description, numerous specific details are set forth in order to provide a thorough understanding of the present application. However, the present application can be practiced in a number of different ways beyond the specific embodiments described herein and by persons skilled in the art without departing from the spirit and scope of the present application, and it is therefore intended that all such changes and modifications be included within the scope of the present application.

[0043] In the description of the present application, it should be understood that if these terms "center", "longitudinal", "transverse", "length", "width", "thickness", "upper", "lower", "front", "back", "left", "right", "vertical", "horizontal", "top", "bottom", "inner", "outer", "clockwise", "counterclockwise", "axial", "radial", "circumferential" and the like appear, these terms indicate the orientation or positional relationship based on the orientation or positional relationship shown in the drawings, and are only for the purpose of facilitating the description of the present application and simplifying the description, and therefore cannot be understood as indicating or implying that the device or element referred to must have a particular orientation, be constructed and operated in a particular orientation, and therefore cannot be understood as limiting the present application.

[0044] In addition, if these terms "first", "second" appear, these terms are only for the purpose of description, and cannot be understood as indicating or implying relative importance or implicitly indicating the number of technical features referred to. Therefore, the features limited by "first", "second" can explicitly or implicitly include at least one of the features. In the description of the present application, if the term "a plurality of" appears, the meaning of "a plurality of" is at least two, for example, two, three, etc., unless otherwise specifically limited.

[0045] In the present application, unless specifically defined otherwise, if there is an appearance of the terms "installation", "connection", "connection", "fixation" and the like, these terms should be broadly understood. For example, it can be fixedly connected, or it can be detachably connected, or it can be integrated; it can be mechanically connected, or it can be electrically connected; it can be directly connected, or it can be indirectly connected through an intermediate medium, or it can be the internal communication of two elements or the interaction relationship between two elements, unless otherwise specifically defined. For those skilled in the art, the specific meaning of the above terms in the present application can be understood according to the specific circumstances.

[0046] In the present application, unless specifically defined otherwise, if there is a description of the first feature "on" or "below" the second feature and the like, it can mean that the first and second features are in direct contact, or the first and second features are indirectly in contact through an intermediate medium. Moreover, the first feature "above", "above" and "above" the second feature can be directly above or obliquely above the second feature, or only indicates that the first feature is higher than the second feature in horizontal height. The first feature "below", "below" and "below" the second feature can be directly below or obliquely below the second feature, or only indicates that the first feature is lower than the second feature in horizontal height.

[0047] It should be noted that if an element is referred to as "fixed to" or "disposed on" another element, it can be directly on another element or there can be a middle element. If an element is considered to be "connected" to another element, it can be directly connected to another element or there can be a middle element. If present, the terms "vertical", "horizontal", "up", "down", "left", "right" and similar expressions used in the present application are for illustrative purposes only and do not represent the only implementation.

[0048] Referring to Figures 1 to 3 The heat dissipation device provided by an embodiment of the present application is applied to an immersion liquid cooling environment, and the heat dissipation device comprises a substrate 100 and a reinforced heat dissipation part 200. The substrate 100 is used to contact a device to be cooled 510, and the substrate 100 comprises a diamond copper layer 110 and a copper layer 120 at least coated on part of the diamond copper layer 110. The reinforced heat dissipation part 200 comprises a plurality of heat dissipation fins 210 protruding from the surface of the copper layer 120 and arranged at intervals.

[0049] The heat dissipation device in the above embodiment, the substrate 100 includes a diamond copper layer 110, and a copper layer 120 covering at least part of the diamond copper layer 110, wherein the diamond copper layer 110 has excellent heat conduction performance, so as to improve the heat dissipation efficiency of the device to be cooled 510, and the hardness of the copper layer 120 is lower than that of the diamond copper layer 110, and the processing difficulty is lower, so as to meet the subsequent processing and assembly accuracy requirements, and a plurality of convex heat dissipation fins 210 arranged at intervals can be processed on the surface thereof to form a reinforced heat dissipation part 200, so as to increase the heat dissipation area through the reinforced heat dissipation part 200, and further improve the heat dissipation efficiency. In this way, through the cooperation of the diamond copper layer 110, the copper layer 120 and the reinforced heat dissipation part 200, not only the heat dissipation requirements of the device to be cooled 510 (such as a chip) with higher power density can be met, but also the processing requirements of some complex shapes can be met, and subsequent large-scale production applications can be carried out.

[0050] In some embodiments, the heat dissipation device is applied to an air-cooled heat dissipation environment. Alternatively, in some embodiments, the heat dissipation device is applied to a liquid-cooled heat dissipation environment, such as a cold plate type liquid-cooled heat dissipation or an immersion type liquid-cooled heat dissipation.

[0051] Referring to Figure 1 and Figure 3 In some embodiments, the copper layer 120 covers all the areas of the diamond copper layer 110. That is, all the outer surfaces of the substrate 100 are copper layers 120, so that complex shape processing can be carried out at any position of the substrate 100, the position selection of the reinforced heat dissipation part 200 is wider, and the processing requirements of higher assembly accuracy can be easily met.

[0052] In the embodiment described in the drawings, the diamond copper layer 110 has a hexahedral structure, and all the six surfaces thereof are covered with the copper layer 120.

[0053] Alternatively, referring to Figure 2 In some embodiments, the substrate 100 includes a contact surface for contacting the device to be cooled 510, and the copper layer 120 covers the non-contact surface of the diamond copper layer 110 except the contact surface.

[0054] In the view of the drawings, the bottom surface of the substrate 100 is a contact surface for contacting the device to be cooled 510, therefore, the bottom surface of the diamond copper layer 110 is not covered with the copper layer 120, and all the other surfaces except the bottom surface are covered with the copper layer 120. In the above embodiment, the device to be cooled 510 directly contacts the diamond copper layer 110 with better heat conduction performance, so as to further accelerate heat conduction and improve heat dissipation efficiency.

[0055] Referring to Figures 1 to 3 In some embodiments, the ratio of the thickness of the diamond copper layer 110 to the thickness of the substrate 100 is a, and a≥0.7.

[0056] When the above ratio range is satisfied, the high thermal conductivity of the diamond copper layer 110 can be maximized, and the heat dissipation efficiency is further improved.

[0057] Referring to Figures 1 to 3 In some embodiments, the thickness of the copper layer 120 is b, and b is in the range of b≤1mm.

[0058] When the above size range is satisfied, the basic thickness requirement for subsequent complex structure processing on the surface of the copper layer 120 can be met, and sufficient processing allowance is provided for subsequent fine processing, while the heat dissipation efficiency is not excessively reduced.

[0059] Referring to Figures 1 to 3 In some embodiments, the volume of the diamond copper layer 110 is at least 70% of the volume of the substrate 100.

[0060] When the above ratio range is satisfied, the high thermal conductivity of the diamond copper layer 110 can be maximized, and the heat dissipation efficiency is further improved; the basic thickness requirement for subsequent complex structure processing on the surface of the copper layer 120 can be met, and sufficient processing allowance is provided for subsequent fine processing, while the heat dissipation efficiency is not excessively reduced.

[0061] Referring to Figure 3 With Figure 4 In some embodiments, the heat dissipation device further comprises an assembly part 310 surrounding the outside of the substrate 100; wherein the assembly part 310 is assembled, connected or welded with the substrate 100 or integrally formed.

[0062] Specifically, the assembly part 310 is annular, which surrounds the outside of the substrate 100, and the heat dissipation device can be fixedly installed through the assembly part 310.

[0063] Referring to Figures 3 to 5 In some embodiments, the heat dissipation device further comprises a first assembly bracket 320 surrounding the outside of the reinforced heat dissipation part 200, and the first assembly bracket 320 is assembled, connected or welded with the assembly part 310 or integrally formed. When the first assembly bracket 320 is assembled with the assembly part 310, corresponding assembly holes 311 are respectively arranged on the first assembly bracket 320 and the assembly part 310.

[0064] Specifically, Figure 5The structure of the embodiment is mainly used for air cooling and immersion liquid cooling. The heat dissipation device can be mounted through the first assembly bracket 320. When the first assembly bracket 320 is assembled and connected with the assembly part 310, the first assembly bracket 320 and the assembly part 310 are respectively provided with assembly holes 311 penetrating along the thickness direction thereof. The assembly connection of the first assembly bracket 320 and the assembly part 310 is realized by passing the threaded fasteners through the corresponding two assembly holes 311. Alternatively, the first assembly bracket 320 and the assembly part 310 can also be assembled together through clamping or the like, or the first assembly bracket 320 and the assembly part 310 can also be welded together or directly integrally formed.

[0065] Preferably, the material of the assembly part 310 and the first assembly bracket 320 is copper, so that when they are assembled and connected, the machining difficulty of the assembly holes 311 formed thereon will be lower.

[0066] Referring to Figure 5 In some embodiments, the first assembly bracket 320 is further provided with a connecting hole 321 for fixing the server mainboard.

[0067] Specifically, the threaded fasteners can pass through the connecting hole 321 and the corresponding hole position on the server mainboard to realize the fixed mounting of the heat dissipation device. Of course, in other embodiments, the first assembly bracket 320 can also be connected with the server mainboard through welding, bonding or clamping.

[0068] Referring to Figure 3 , Figure 4 With Figure 6 In other embodiments, the heat dissipation device further comprises a second assembly bracket 330, and the second assembly bracket 330 is provided with a fluid inlet 3321 and a fluid outlet 3322. The second assembly bracket 330 is assembled and connected or welded or integrally formed with the assembly part 310, and a cooling cavity 3323 is formed between the two, which is communicated with the fluid inlet 3321 and the fluid outlet 3322, and the cooling cavity 3323 is used for containing the reinforced heat dissipation part and the cooling fluid.

[0069] Specifically, the second assembly bracket 330 is arranged outside the reinforced heat dissipation part 200, and the connection mode of the second assembly bracket 330 and the assembly part 310 is similar to the connection mode of the first assembly bracket 320 and the assembly part 310 in the foregoing embodiment. When the second assembly bracket 330 and the assembly part 310 are assembled and connected, corresponding assembly holes 311 are respectively arranged on the second assembly bracket 330 and the assembly part 310. The second assembly bracket 330 and the assembly part 310 are assembled and connected by means of threaded fasteners passing through the corresponding two assembly holes 311. Alternatively, the second assembly bracket 330 and the assembly part 310 can also be assembled together by means of clamping or the like, or the second assembly bracket 330 and the assembly part 310 can also be welded together or directly integrally formed.

[0070] Preferably, the material of the assembly part 310 and the second assembly bracket 330 is copper, so that when they are assembled and connected, the processing difficulty of the assembly holes arranged thereon is lower.

[0071] In Figure 6 In the embodiment shown, the heat dissipation device is installed on the server mainboard through the assembly part 310. For example, threaded fasteners are arranged, and the assembly part 310 is connected to the server mainboard through the assembly holes 311; or the assembly part 310 is connected to the server mainboard by means of clamping, welding, bonding or the like. Of course, Figure 5 In the embodiment shown, the heat dissipation device can also be installed on the server mainboard in a similar manner, that is, through the assembly part 310.

[0072] Figure 6 The structure of the embodiment shown is mainly used for cold plate type liquid cooling heat dissipation. The second assembly bracket 330, the assembly part 310 and the base plate 100 jointly enclose a cooling cavity 3323. Fluid can flow into the cooling cavity 3323 through the fluid inlet 3321, exchange heat with the reinforced heat dissipation part 200 and the base plate 100, and then flow out of the cooling cavity 3323 from the fluid outlet 3322. Among them, the fluid can change phase in the cooling cavity 3323, that is, the heat dissipation is realized by means of phase change liquid cooling, the fluid is in liquid state when flowing in, and in gaseous or gas-liquid mixed state when flowing out; or it can not change phase, that is, the fluid is in liquid state when flowing in and flowing out.

[0073] Referring to Figure 1 With Figure 4 In some embodiments, the heat dissipation fins 210 are constructed with a plurality of protruding / recessed micro-nano structures 211.

[0074] Specifically, the shape of the heat dissipation fins 210 can be arbitrarily selected, for example, the shape can be cylindrical, prismatic, prismatic, prismatic, etc. The heat dissipation fins 210 can be processed by means of CNC, laser etching or the like.

[0075] The micro-nano structure 211 is configured by opening the micron / nano-sized protrusions / grooves on the surface of the heat dissipation fin 210. In the phase-change liquid cooling heat dissipation environment, the micro-nano structure 211 increases the capillary liquid absorption capacity of the surface of the heat dissipation fin 210, so that the cooling medium can be replenished to the heated wall in time. At the same time, the micro-nano structure 211 increases the boiling bubble nucleation point, thereby enhancing the boiling phase-change heat dissipation effect, and the heat dissipation efficiency is higher.

[0076] In addition, the surface of the micro-nano structure 211 can also be subjected to surface modification treatment to have specific hydrophilicity and hydrophobicity, so as to improve the bubble nucleation and wetting characteristics of the boiling surface.

[0077] Referring to Figure 1 , Figure 5 and Figure 7 , the server provided by an embodiment of the present application includes the heat dissipation device in any one of the foregoing embodiments, and further includes a device to be cooled 510 and a server mainboard 520. The device to be cooled 510 is mounted on the server mainboard 520. The substrate 100 is connected to the server mainboard 520 and in contact with the device to be cooled 510.

[0078] The server in the foregoing embodiments can not only meet the heat dissipation requirements of the device to be cooled 510 (such as a chip) with higher power density, but also meet the processing requirements of some complex shapes, and can be mass-produced and applied subsequently.

[0079] Referring to Figure 1 , Figure 5 and Figure 7 , in some embodiments, a closed accommodating cavity 700 is configured between the substrate 100 and the server mainboard 520. The device to be cooled 510 includes a chip accommodated in the accommodating cavity 700 and welded to the server mainboard 520. The substrate 100 is in thermal contact with the chip along one side of the thickness direction of the substrate 100, and the other side is provided with the reinforced heat dissipation part 200.

[0080] Specifically, the chip is welded to the top surface of the server mainboard 520. The bottom end of the substrate 100 is in thermal contact with the chip, and the top end is provided with the reinforced heat dissipation part 200. In the foregoing embodiment, by arranging the closed accommodating cavity 700, the chip is accommodated in the accommodating cavity 700, so as to protect the interfacial material (such as silicone grease, pad, etc.). The cooling medium is prevented from being directly in contact with the interfacial material, so as to pollute the cooling medium. The heat generated by the chip can be quickly transferred to the cooling medium through the substrate 100 in thermal contact with the chip. The heat can also be quickly transferred to the cooling medium through the substrate 100 and then the reinforced heat dissipation part 200, so as to realize the liquid cooling heat dissipation of the chip.

[0081] Referring to Figure 1 ,Figure 5 With Figure 7 In some embodiments, the heat dissipation device further comprises an assembling portion 310 surrounding the substrate 100, and a ring-shaped seat 400 connecting between the assembling portion 310 and the server mainboard 520, and the server mainboard 520, the ring-shaped seat 400, the assembling portion 310 and the substrate 100 jointly surround a containing cavity 700.

[0082] Specifically, the ring-shaped seat 400 is ring-shaped, which surrounds the chip, and correspondingly, the assembling portion 310 is also ring-shaped, which surrounds the edge of the substrate 100 and is connected thereto. The assembling portion 310 is thinned at one end close to the ring-shaped seat 400, so as to be connected to the one end of the ring-shaped seat 400, and the other end of the ring-shaped seat 400 is connected to the server mainboard 520, so that the closed containing cavity 700 can be jointly surrounded by the server mainboard 520, the ring-shaped seat 400, the assembling portion 310 and the substrate 100. Since the assembling portion 310 is indirectly connected to the server mainboard 520 through the ring-shaped seat 400, the heat generated by other electrical components on the server mainboard 520 can also be transmitted to the assembling portion 310 through the ring-shaped seat 400, and then to the cooling medium, and can also be transmitted to the substrate 100 and the reinforced heat dissipation portion 200 through the assembling portion 310, and then to the cooling medium, so as to achieve rapid heat dissipation of other electrical components.

[0083] Referring to Figure 1 , Figure 5 With Figure 7 In some embodiments, the assembling portion 310 is a copper plate, and the copper plate (assembling portion 310) and the ring-shaped seat 400 are bonded by a resin layer 620.

[0084] Specifically, the ring-shaped seat 400 is made of metal, which is bonded to the copper plate (assembling portion 310) by epoxy resin or thermosetting resin, and is bonded to the server mainboard 520 by epoxy resin or thermosetting resin. Generally, the heat dissipation requirement of the area on the server mainboard 520 corresponding to the ring-shaped seat 400 is not high, and the assembling portion 310 corresponding to this area is designed as a copper plate with lower cost, so as to reduce the cost as much as possible.

[0085] Referring to Figure 1 , Figure 5 With Figure 7 In some embodiments, the substrate 100 and the chip are welded.

[0086] Specifically, the substrate 100 and the chip can be welded by reflow soldering, and a thermal interface material layer 610 is arranged between the substrate 100 and the chip. The thermal interface material layer 610 is welded to improve the thermal connection reliability between the substrate 100 and the chip and reduce the contact thermal resistance between the substrate 100 and the chip. More specifically, when the chip is attached to the substrate 100, even if the attachment interface material is used, there are often extremely fine and uneven gaps between the chip and the substrate 100. These gaps reduce the contact area between the chip and the substrate 100, and air exists in the gaps. Because the thermal conductivity of air is only 0.024 W / (m·K), the contact thermal resistance between the chip and the substrate 100 is large, which seriously hinders the conduction of heat. Therefore, the use of the thermal interface material can fill the gaps and discharge the air in the gaps, so that an effective heat conduction channel is established between the chip and the substrate 100, the contact thermal resistance is greatly reduced, and the heat dissipation efficiency is improved.

[0087] In actual use, the welding temperature is related to the welding material used (for a pure indium interface material, the welding temperature is 150°C), and the heat dissipation device needs to be pressed during the welding process to ensure that the substrate 100 and the interface material are in close contact.

[0088] As a preferred embodiment, the thermal interface material mainly uses a low-melting-point metal, such as indium, gallium, tin, or a composite thereof.

[0089] Referring to Figure 1 , Figure 5 and Figure 7 In some embodiments, the side of the substrate 100 close to the chip is configured with a back gold layer, and / or the side of the chip close to the substrate 100 is configured with a back gold layer.

[0090] In this way, the chip and the thermal interface material layer 610 have better thermal connection. The material of the back gold layer can be Cu, Ti, Au, Ni, copper / carbon nanomaterial. The back gold layer includes an electrically conductive part, a barrier part, and an adhesive part arranged in sequence.

[0091] Specifically, the side of the chip close to the substrate 100 is provided with an electrically conductive part, a barrier part, and an adhesive part in sequence, and the electrically conductive part and the thermal interface material layer form a solder layer together, so as to facilitate the welding of the chip and the substrate 100 into an integrated structure. The adhesive part is arranged to facilitate the firm connection of the electrically conductive part to the chip, and the barrier part is used to prevent the mutual diffusion between the adhesive part and the electrically conductive part and reduce the contact between the solder and the adhesive part. When the thermal interface material is pure indium, the welding temperature of the chip and the substrate 100 is 150°C.

[0092] Referring to Figure 1 , Figure 5 and Figure 7 Figure 1 Figure 5 Figure 7 Figure 1 Figure 5 Figure 7In some embodiments, the annular seat 400 is provided with an inner recessed avoiding groove 410 near one side of the server motherboard 520, for avoiding the electrical components protruding outward from the surface of the server motherboard 520.

[0093] For example, in the embodiment shown in the drawings, the electrical components are capacitors 530. The avoiding groove 410 can protect the electrical components protruding outward from the surface of the server motherboard 520. In particular, when welding the chip and the substrate 100, the avoiding groove 410 can cover the electrical components, so as to avoid the welding products splashing on the electrical components and damaging the electrical components.

[0094] The technical features of the above-mentioned embodiments can be combined in any manner. In order to make the description simple, all possible combinations of the technical features in the above-mentioned embodiments are not described, however, as long as the combinations of the technical features do not exist contradictions, they should be considered as the scope of the present application.

[0095] The above-mentioned embodiments only express several implementation manners of the present application, and the description is relatively specific and detailed, but it should not be understood as a limitation on the patent scope of the present application. It should be pointed out that, for ordinary skilled in the art, several modifications and improvements can be made without departing from the concept of the present application, and these all belong to the protection scope of the present application. Therefore, the patent protection scope of the present application should be subject to the appended claims.

Claims

1. A heat dissipating device, characterized by, The heat dissipation device comprises: a substrate for contacting with a device to be cooled, wherein the substrate comprises a diamond copper layer and a copper layer covering at least a part of the diamond copper layer; and a reinforced heat dissipation part comprising a plurality of heat dissipation fins protruding from the surface of the copper layer and arranged at intervals.

2. The heat dissipating device according to claim 1, wherein The copper layer covers the entire area of the diamond copper layer. Alternatively, the substrate comprises a contact surface for contacting with the device to be cooled, and the copper layer covers the non-contact surface of the diamond copper layer except the contact surface.

3. The heat dissipating device of claim 1, wherein The ratio of the thickness of the diamond copper layer to the thickness of the substrate is a, and a≥0.

7. And / or, the thickness of the copper layer is b, and b is in the range of b≤1mm.

4. The heat dissipating device of claim 1, wherein The volume of the diamond copper layer accounts for at least 70% of the volume of the substrate.

5. The heat dissipating device of claim 1, wherein The heat dissipation device further comprises an assembly part surrounding the outside of the substrate; wherein the assembly part is assembled, welded or integrally formed with the substrate.

6. The heat dissipating device according to claim 5, wherein The heat dissipation device further comprises a first assembly support surrounding the outside of the reinforced heat dissipation part, and the first assembly support is assembled, welded or integrally formed with the assembly part. When the first assembly support is assembled with the assembly part, corresponding assembly holes are respectively arranged on the first assembly support and the assembly part.

7. The heat dissipating device according to claim 6, wherein The first assembly support is further provided with a connecting hole for fixing a server mainboard.

8. The heat dissipating device of claim 5, wherein, The heat dissipation device further comprises a second assembly support, and the second assembly support is provided with a fluid inlet and a fluid outlet. The second assembly support is assembled, welded or integrally formed with the assembly part, and a cooling cavity is formed between the two, which is connected to the fluid inlet and the fluid outlet, and is used to accommodate the reinforced heat dissipation part and a cooling fluid.

9. The heat dissipating device according to any one of claims 1 to 7, wherein A plurality of protrusions / recesses of micro / nano structures are arranged on the heat dissipation fins.

10. A server, characterized by The server comprises the heat dissipation device of any one of claims 1 to 9, and further comprises the device to be cooled and a server mainboard, wherein the device to be cooled is mounted on the server mainboard, and the substrate is connected to the server mainboard and contacts with the device to be cooled.

11. The server of claim 10, wherein, An enclosed accommodation cavity is arranged between the substrate and the server mainboard, and the device to be cooled comprises a chip accommodated in the accommodation cavity and welded to the server mainboard, and the substrate is in heat transfer contact with the chip on one side along the thickness direction of the substrate, and the other side is provided with the reinforced heat dissipation part.

12. The server of claim 11, wherein, The heat dissipation device further comprises an assembly part surrounding the outside of the substrate, and an annular seat connected between the assembly part and the server mainboard, and the server mainboard, the annular seat, the assembly part and the substrate jointly surround the accommodation cavity.

13. The server of claim 12, wherein, The assembly part is a copper plate, and the copper plate and the annular seat are bonded by a resin layer.

14. The server of any one of claims 11 to 13, characterized in that, The substrate and the chip are welded. The substrate is provided with a gold backing layer on the side close to the chip, and / or the chip is provided with a gold backing layer on the side close to the substrate.

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