Current-sharing power module packaging structure

Abstract

The utility model provides a current-sharing power module packaging structure, which relates to the field of power semiconductors, and is characterized in that a plurality of power units are welded on a copper-clad ceramic substrate, and each power unit comprises a plurality of silicon carbide MOS (Metal Oxide Semiconductor) tubes which are connected in parallel; the Kelvin terminal leading-out copper sheets are arranged on the edge of the copper-clad ceramic substrate, and each silicon carbide MOS tube corresponds to one Kelvin terminal leading-out copper sheet and is connected with the Kelvin terminal leading-out copper sheet through a lead. The ED3 module has the beneficial effects that the IGBT in the ED3 module is replaced by the silicon carbide MOS tubes, and each silicon carbide MOS tube is provided with an independent Kelvin terminal leading-out copper sheet for connection, so that overload of some modules due to excessive current bearing caused by non-uniform current is avoided, uniform distribution of current stress and thermal stress is ensured, and the service life of the ED3 module is prolonged. One or more silicon carbide MOS tubes are prevented from running in a current limit state, so that the stability and reliability of the whole system are improved, and the failure rate of electronic components is reduced and the service life of the electronic components is prolonged through current sharing and thermal stress reduction.

Description

TECHNICAL FIELD

[0001] The utility model relates to the field of power semiconductor, especially relates to a current -sharing power module package structure. BACKGROUND

[0002] ED3 (EconoDUAL TM 3) module is the IGBT module package that is carefully designed for medium power application, it incorporates the latest TRENCHSTOP TM IGBT7 or IGBT4 technology, not only ensures the excellent high power density, also shows the excellent power cycle performance. The module adopts the symmetrical design, greatly optimizes the current distribution efficiency in parallel operation process. With high power density, optimized heat dissipation structure, integrated additional function and leading IGBT technology, ED3 module brings a kind of both efficient and reliable and economical and practical solution for medium power application field.

[0003] Nevertheless, the ED3 module of all IGBT also has certain limitations and some shortcomings, for example:

[0004] 1. compared with silicon carbide MOS tube, IGBT supports lower switching frequency, which means that using silicon carbide MOS tube can reduce the capacity and volume of thin film capacitor, magnetic element, realizes the small size and light weight of electric drive system;

[0005] 2. compared with silicon carbide MOS tube, IGBT withstands lower working voltage and working temperature;

[0006] 3. IGBT has unidirectional conduction, which means that it can only conduct in one direction, and cannot handle alternating current (AC) waveform without additional circuit;

[0007] 4. the topology symmetrical distribution structure of ED3 can optimize the current sharing problem between IGBT half bridges during parallel operation to a certain extent, but cannot make every chip completely current sharing, which still affects the dynamic response of the whole system to a certain extent, and may cause system oscillation or instability.

[0008] Therefore, it is urgent to develop a more optimal power module package structure to solve the above problems. UTILITY MODEL CONTENT

[0009] In view of the problems in the prior art, the utility model provides a current -sharing power module package structure, comprising:

[0010] Copper clad ceramic substrate is welded with a plurality of power units, and each power unit includes a plurality of parallel silicon carbide MOS tubes;

[0011] A plurality of Kelvin terminal lead-out copper sheets are arranged at the edges of the copper-clad ceramic substrate, and each of the silicon carbide MOS tubes is connected to one of the Kelvin terminal lead-out copper sheets through a lead wire.

[0012] Preferably, a plurality of gate terminal lead-out copper sheets are arranged at the edges of the copper-clad ceramic substrate, and each of the gates of the silicon carbide MOS tubes is connected to one of the gate terminal lead-out copper sheets through a lead wire.

[0013] Preferably, the silicon carbide MOS tube comprises a Kelvin pin, and the Kelvin pin of the silicon carbide MOS tube is connected to the corresponding Kelvin terminal lead-out copper sheet through a lead wire.

[0014] Preferably, the gate, the source and the Kelvin pin of the silicon carbide MOS tube are arranged on the front surface of the silicon carbide MOS tube, and the drain of the silicon carbide MOS tube is arranged on the back surface of the silicon carbide MOS tube.

[0015] Preferably, the drain of the back surface of the silicon carbide MOS tube is welded to the silicon carbide MOS tube welding area of the copper-clad ceramic substrate.

[0016] Preferably, the power module comprises two power units.

[0017] Preferably, each of the power units comprises four silicon carbide MOS tubes.

[0018] The technical scheme has the following advantages or beneficial effects:

[0019] The IGBT in the ED3 module is replaced by a silicon carbide MOS tube, the working voltage and temperature of the silicon carbide MOS tube are higher than those of the IGBT, and the switching frequency is higher; and each silicon carbide MOS tube is provided with an independent Kelvin terminal lead-out copper sheet for connection, compared with the mode that all the IGBTs in the traditional ED3 module are connected to a whole Kelvin terminal lead-out copper sheet, current unevenness can be avoided, some silicon carbide MOS tubes can be prevented from being overloaded due to bearing too much current, the uniform distribution of current stress and thermal stress among the parallel silicon carbide MOS tubes is ensured, and a single or multiple silicon carbide MOS tubes can be prevented from operating in a current limit state, so that the stability and reliability of the whole power module are improved; through current sharing, thermal stress is reduced, the failure rate of electronic components is reduced, and the service life of the electronic components is prolonged. BRIEF DESCRIPTION OF DRAWINGS

[0020] Figure 1 A topology structure diagram for replacing the IGBT in the traditional ED3 module package with a silicon carbide MOS tube;

[0021] Figure 2 A topology structure diagram in an embodiment of the utility model;

[0022] Figure 3 This is a schematic diagram of the power module packaging structure in an embodiment of the present invention. Detailed Implementation

[0023] The present invention will now be described in detail with reference to the accompanying drawings and specific embodiments. The present invention is not limited to this embodiment; other embodiments that conform to the spirit of the present invention may also fall within its scope.

[0024] In a preferred embodiment of this utility model, based on the above-mentioned problems existing in the prior art, a current-sharing power module packaging structure is provided, such as... Figure 3 The following are included:

[0025] A copper-clad ceramic substrate 1, on which multiple power units are soldered, each power unit including multiple parallel silicon carbide MOSFETs 2;

[0026] Multiple Kelvin terminals are led out with copper foil 3 and set at the edge of the copper-clad ceramic substrate 1. Each silicon carbide MOS transistor 2 corresponds to a Kelvin terminal led out with copper foil 3 and is connected by leads.

[0027] In a preferred embodiment of the present invention, multiple gate terminal lead-out copper foils 4 are disposed at the edge of the copper-clad ceramic substrate 1, and the gate G of each silicon carbide MOS transistor 2 corresponds to a gate terminal lead-out copper foil 4 and is connected by leads.

[0028] In a preferred embodiment of this utility model, the silicon carbide MOSFET 2 includes a Kelvin pin KS, and the Kelvin pin KS of the silicon carbide MOSFET 2 is connected to the corresponding Kelvin terminal lead-out copper foil 3 by a lead wire.

[0029] In a preferred embodiment of this invention, the gate G, source S, and Kelvin pin KS of the silicon carbide MOS transistor 2 are disposed on the front side of the silicon carbide MOS transistor 2, and the drain of the silicon carbide MOS transistor 2 is disposed on the back side of the silicon carbide MOS transistor 2.

[0030] In a preferred embodiment of this invention, the silicon carbide MOS transistor welding area 10 of the copper-clad ceramic substrate 1 is welded to the drain electrode on the back side of the silicon carbide MOS transistor 2.

[0031] A preferred embodiment of this utility model includes two power units.

[0032] In a preferred embodiment of this invention, each power unit includes four silicon carbide MOS transistors 2.

[0033] Specifically, such as Figure 1As shown in the figure, the IGBT in the original ED3 module package is replaced by a silicon carbide MOS tube, and the silicon carbide MOS tube 2 is used as a power chip in the power module; the IGBT in the ED3 structure IGBT module is replaced by a silicon carbide MOS tube 2, and the silicon carbide MOS tube 2 has higher working voltage and working temperature resistance and higher switching frequency than the IGBT.

[0034] Figure 1 Only two silicon carbide MOS tubes 2 are shown to represent two power units, but in fact there are multiple parallel silicon carbide MOS tubes 2 in a power unit, and such a topology diagram represents that the same poles of all silicon carbide MOS tubes 2 in the same power unit are connected together, and all silicon carbide MOS tubes 2 in the same power unit share a gate terminal and a Kelvin terminal, and such a connection mode is difficult to ensure current sharing, and current imbalance may occur, which may cause some silicon carbide MOS tubes 2 to be overloaded due to excessive current.

[0035] Therefore, the topology diagram is modified, as shown in the figure, Figure 2 The eight silicon carbide MOS tubes 2 in the two power units in the power module are all shown, and the terminals and parallel structures of the silicon carbide MOS tubes 2 are marked, and a new power module packaging structure is obtained, as shown in the figure, Figure 3 Two exposed copper skins are provided on the copper-clad ceramic substrate 1 as the silicon carbide MOS tube welding area 10 to weld the drain of the silicon carbide MOS tube 2 in the power unit on the copper-clad ceramic substrate 1.

[0036] Further, a plurality of independent Kelvin terminal lead-out copper skins 3 are provided on the edge of the copper-clad ceramic substrate 1 for welding with the Kelvin terminal and corresponding connection with the Kelvin pin KS (Kelvin Source, also known as auxiliary source) of each silicon carbide MOS tube 2 through the KS line, so that each silicon carbide MOS tube 2 has its own independent Kelvin terminal lead-out copper skin 3, and the current paths of each silicon carbide MOS tube 2 are the same, thereby achieving current sharing, which can avoid the situation that some silicon carbide MOS tubes 2 are overloaded due to excessive current, ensure uniform distribution of current stress and thermal stress between the parallel silicon carbide MOS tubes 2, prevent a single or multiple silicon carbide MOS tubes 2 from operating in a current limit state, thereby improving the stability and reliability of the entire system, reducing thermal stress through current sharing, reducing the failure rate of electronic components, and prolonging the service life.

[0037] Similarly, the gate G of each silicon carbide MOS tube 2 is also provided with a corresponding independent gate terminal lead-out copper skin 4.

[0038] The above merely describes the preferred embodiments of the present application, and is not intended to limit the implementation and protection scope of the present application. For those skilled in the art, it should be understood that any equivalent changes and obvious variations made according to the content of the present application and drawings should be included in the protection scope of the present application.

Claims

1. A current sharing power module package structure, characterized by, The application relates to a power module, comprising: a copper-clad ceramic substrate, a plurality of power units are welded on the copper-clad ceramic substrate, each power unit comprises a plurality of parallel silicon carbide MOS tubes; a plurality of Kelvin terminal lead-out copper sheets are arranged at the edges of the copper-clad ceramic substrate, each of the silicon carbide MOS tubes corresponds to one of the Kelvin terminal lead-out copper sheets and is connected through a lead wire.

2. The power module package structure of claim 1, wherein, a plurality of gate terminal lead-out copper sheets are arranged at the edges of the copper-clad ceramic substrate, the gate of each of the silicon carbide MOS tubes corresponds to one of the gate terminal lead-out copper sheets and is connected through a lead wire.

3. The power module package structure of claim 1, wherein, The silicon carbide MOS tube comprises a Kelvin pin, and the Kelvin pin of the silicon carbide MOS tube is connected to the corresponding Kelvin terminal lead-out copper sheet through a lead wire.

4. The power module package structure of claim 3, wherein, The gate, source and Kelvin pin of the silicon carbide MOS tube are arranged on the front surface of the silicon carbide MOS tube, and the drain of the silicon carbide MOS tube is arranged on the back surface of the silicon carbide MOS tube.

5. The power module package structure of claim 4, wherein, The silicon carbide MOS tube welding area of the copper-clad ceramic substrate is welded to the drain on the back surface of the silicon carbide MOS tube.

6. The power module package structure of claim 1, wherein, The application relates to a power module, comprising two power units.

7. The power module package structure of claim 1, wherein, Each of the power units comprises four silicon carbide MOS tubes.

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