Vapor phase growth equipment

Abstract

The utility model discloses vapor phase growth equipment. The vapor phase growth equipment comprises a process chamber; the barrel is arranged in the process chamber; the pipe body is arranged on the bottom surface of the barrel and is communicated with the interior of the barrel; the first air channel extends in the side wall of the pipe body, the bottom wall of the barrel body and the side wall of the barrel body in sequence; the base is provided with a recess, and the recess is used for placing a substrate; a second air channel is formed in the base, one end of the second air channel communicates with the first air channel, and the other end of the second air channel communicates with the recess. The rotary sealing mechanism is connected with the bottom of the tube body so as to drive the base to rotate, and the rotary sealing mechanism is provided with a driving gas inlet device which is communicated with the first gas channel so as to provide driving gas which enables the substrate in the concave hole to rotate; the rotating stability of the base, the mixing uniformity of reaction gas above the substrate and the temperature uniformity of the substrate are facilitated, the influence of corrosive reaction gas on the heater can be reduced or avoided, and the obvious heat influence of the heater on the rotating driving device can be reduced or avoided.

Description

TECHNICAL FIELD

[0001] The utility model relates to semiconductor equipment technical field especially relates to a vapor phase growth equipment. BACKGROUND

[0002] In the prior art semiconductor vapor phase growth equipment, the substrate is placed in the recess of the susceptor, the heater is arranged below the susceptor, the substrate reaches the process temperature by heating the susceptor, the gas injection device provides each reaction gas to the substrate, and each reaction gas is thermally decomposed on the surface of the substrate to form a semiconductor material layer.

[0003] The prior art generally connects the middle part of the susceptor to make it rotate through the rotary sealing device; however, this kind of rotary driving mode is poor in stability, especially at high speed, and the heater is easily exposed to the reaction environment, which is easily eroded by the corrosive reaction gas and affects the heating effect. In addition, the rotary sealing device itself is easy to heat due to driving the susceptor to rotate, and is more easily affected by the heat of the heater, which is not conducive to the normal work of the rotary drive.

[0004] Therefore, it is necessary to provide a new vapor phase growth equipment to solve the above problems existing in the prior art. UTILITY MODEL CONTENTS

[0005] The utility model aims at providing a vapor phase growth equipment, which is beneficial to the stability of the susceptor rotation, the uniformity of the reaction gas mixing above the substrate, and the uniformity of the substrate temperature, and can reduce or avoid the influence of the corrosive reaction gas on the heater and reduce or avoid the significant heat influence of the heater on the rotary drive device.

[0006] To achieve the above-mentioned purpose, the technical scheme of the utility model is as follows:

[0007] A vapor phase growth equipment, comprising:

[0008] A process chamber;

[0009] A cylinder arranged in the process chamber and a pipe arranged at the bottom surface of the cylinder and communicated with the inside of the cylinder;

[0010] A first air duct extending in the sidewall of the pipe, the bottom wall of the cylinder and the sidewall of the cylinder in sequence;

[0011] A susceptor arranged at the top of the cylinder to shield the top opening of the cylinder, the susceptor is provided with a recess on the top, and the recess is used for placing a substrate; a second air duct is arranged in the inside of the susceptor, one end of the second air duct is communicated with the first air duct, and the other end is communicated with the recess;

[0012] A rotating sealing mechanism is sealingly arranged at the bottom of the process chamber and connected to the bottom of the pipe body to drive the susceptor to rotate, and the rotating sealing mechanism is provided with a driving gas inlet device in communication with the first gas channel to provide driving gas to drive the substrate in the recess to rotate.

[0013] A heating device includes a heating body and a heating support seat supporting the heating body, the heating body is located below the susceptor in the cylinder, the heating support seat extends from the cylinder towards the pipe body, penetrates the pipe body and is fixed to the rotating sealing mechanism to keep stationary during the rotation of the cylinder driven by the rotating sealing mechanism.

[0014] By adopting the above technical scheme, the rotating sealing mechanism is sealingly arranged at the bottom of the process chamber and connected to the bottom of the pipe body, the process chamber is provided with a cylinder and a pipe body arranged at the bottom of the cylinder and in communication with the inside of the cylinder, and the edge portion of the susceptor is arranged at the top of the cylinder, so that the pipe body and the cylinder are driven to rotate by the rotating sealing mechanism, and the susceptor is driven to rotate through the edge portion of the susceptor, which is beneficial to the stability of the rotation of the susceptor; the first gas channel extends in the sidewall of the pipe body, in the bottom wall of the cylinder and in the sidewall of the cylinder in sequence, and the second gas channel is arranged inside to communicate with the first gas channel and the recess arranged on the susceptor for placing the substrate, the rotating sealing mechanism is provided with a driving gas inlet device in communication with the first gas channel to provide driving gas to drive the substrate in the recess to rotate, so that the substrate can rotate while the susceptor drives the substrate to revolve, which is beneficial to the uniformity of the mixing of the reaction gas above the substrate and the uniformity of the temperature of the substrate; the heating body of the heating device is located below the susceptor in the cylinder, which can reduce or avoid the adverse effects of corrosive gas; since the pipe body is arranged between the cylinder and the rotating sealing mechanism, the distance between the heating device and the rotating sealing mechanism is increased, and the rotating driving device can be reduced or avoided from being significantly affected by the heater.

[0015] Optionally, the number of the second gas channels and the first gas channels is at least 2 and communicates one by one, and the number of the recesses is at least 2 and communicates one by one with the second gas channels.

[0016] Optionally, the cylinder includes a hollow bottom plate and a cylinder body surrounding the hollow bottom plate and open at both ends;

[0017] The susceptor is fixedly arranged at the top of the cylinder body to shield the top opening of the cylinder body;

[0018] The first gas channel extends in the hollow bottom plate in the radial direction of the hollow bottom plate and extends in the sidewall of the cylinder body in the axial direction of the cylinder body.

[0019] Optionally, the top surface of the barrel body is provided with at least one clamping groove, the base comprises a bottom-opened cover, the side wall of the cover is provided with a ring body, and the ring body is provided with at least one protrusion located in the cover;

[0020] The base is arranged on the top surface of the barrel body, each clamping groove is matched with each protrusion in a concave-convex mode, and the bottom surface of the ring body is attached to the top surface of the barrel body.

[0021] Optionally, the first air passage outlet is located on the top surface of the barrel body, the second air passage inlet is located on the side of the ring body facing the top surface of the barrel body, and the first air passage outlet is in communication with the second air passage inlet in a butt joint mode.

[0022] Optionally, the fixing member is sequentially penetrated through the sleeve ring, the side wall and at least part of the top surface of the barrel flange, and then detachably arranged on the hollow bottom plate, so that the sealing connection relationship between the barrel body and the hollow bottom plate is strengthened.

[0023] Optionally, the sleeve ring, the side wall of the barrel body and the barrel flange form an accommodating space, the accommodating space is located between the fixing member and the side wall of the barrel body, and an inclined spring is arranged in the accommodating space to improve the sealing reliability.

[0024] Optionally, the number of the recesses is at least two, one end of the second air passage is communicated with the first air passage, extends from the edge of the base to the middle part of the base, and then communicated with each recess.

[0025] Optionally, the barrel body and the base are integrated structures.

[0026] Optionally, the tube body and the barrel body are integrated structures. BRIEF DESCRIPTION OF DRAWINGS

[0027] Figure 1 It is a main body structure sectional view of the gas phase growth equipment of the embodiment of the utility model;

[0028] Figure 2 It is a perspective structure schematic view of a base of the embodiment of the utility model;

[0029] Figure 3 It is a barrel body structure bottom view of the embodiment of the utility model;

[0030] Figure 4 For Figure 3 Sectional view along A-A portion of the middle;

[0031] Figure 5 Assembly structure schematic view of the base, the barrel body and the hollow bottom plate of the embodiment of the utility model;

[0032] Figure 6 Exploded view of the assembly structure between the base, the barrel body and the hollow bottom plate of the embodiment of the utility model;

[0033] Figure 7 For Figure 5 Enlarged view of A portion of the middle;

[0034] Figure 8 Assembly structure schematic view of the hollow bottom plate and the pipe body of the embodiment of the utility model;

[0035] Figure 9 Perspective structure schematic view of another base of the embodiment of the utility model.

[0036] Reference signs:

[0037] 100, process chamber; 110, first air duct; 120, barrel body; 121, clamping groove; 122, barrel body; 123, hollow bottom plate; 124, barrel flange; 140, pipe body; 200, base; 210, recess; 211, arc air duct; 212, air inlet end; 220, second air duct; 221, branch pipeline; 230, protrusion; 240, cover body; 250, ring body; 300, rotary sealing mechanism; 330, condenser pipe; 400, heating device; 410, heating body; 420, heating support seat; 510, sleeve ring; 520, fixing piece; 530, inclined spring. DETAILED DESCRIPTION

[0038] In order to make the purpose, technical scheme and advantages of the embodiments of the utility model clearer, the technical scheme in the embodiments of the utility model will be described clearly and completely below. Obviously, the described embodiments are part of the embodiments of the utility model, rather than all the embodiments. Based on the embodiments in the utility model, all other embodiments obtained by those skilled in the art without creative labor fall within the scope of protection of the utility model. Unless otherwise defined, the technical terms or scientific terms used herein should be understood as the usual meaning by those skilled in the art. The "including" and similar words used herein mean that the elements or objects before the words cover the elements or objects listed after the words and their equivalents, without excluding other elements or objects.

[0039] The specific embodiments of the utility model will be further described in detail below with reference to the drawings.

[0040] Embodiments of the utility model provide a kind of gas phase growth equipment, for carrying out vapor deposition reaction on substrate to grow semiconductor material layer.Gas phase growth equipment can be Chemical Vapor Deposition (CVD) device, it can also be Physical Vapor Deposition (PVD) device.The chemical vapor deposition device therein can be Plasma-Enhanced Chemical Vapor Deposition (PECVD) device, Metal-organic Chemical Vapor Deposition (MOCVD) device etc..This embodiment is described with MOCVD device as an example.It should be understood that the device is merely exemplary, and the utility model is not limited to this device.

[0041] The following will be described in detail with reference to Figures 1 to 9 Detailed description.

[0042] Gas phase growth equipment includes process chamber 100, cylinder 120 arranged in process chamber 100 and pipe body 140 arranged at the bottom of cylinder 120 and communicated with the inside of cylinder 120.

[0043] Gas phase growth equipment further includes first gas channel 110, which extends in the sidewall of pipe body 140, the bottom wall of cylinder 120 and the sidewall of cylinder 120 in turn.

[0044] Gas phase growth equipment further includes base 200, which is arranged at the top of cylinder 120 to shield the top opening of cylinder 120, and recess 210 is formed in base 200 for placing substrate; second gas channel 220 is formed in the inside of base 200, one end of second gas channel 220 is communicated with first gas channel 110, and the other end is communicated with recess 210.

[0045] In some embodiments, the top of cylinder 120 is arranged in an open manner, and base 200 is fixedly arranged at the top of cylinder 120. In some specific embodiments, the fixing mode between base 200 and cylinder 120 can be clamping or bolt fixing, etc. In this embodiment, base 200 is preferentially selected to be fixedly arranged at the top of cylinder 120 by clamping, to shield the opening at the top of cylinder 120.

[0046] In some embodiments, recess 210 is formed in base 200, and recess 210 is formed in the top surface of base 200. Recess 210 is used for placing substrate.

[0047] In some embodiments, the number of the second gas passages 220 and the first gas passages 110 are both at least two and one-to-one correspondingly communicated, and the number of the recesses 210 is at least two and one-to-one correspondingly communicated with the second gas passages 220.

[0048] In some embodiments, the recesses 210 can be provided with two or more. In the present embodiment, the recesses 210 are preferably provided with multiple, specifically, three recesses 210 are taken as an example. The multiple recesses 210 are uniformly distributed around the axis of the base 200 on the base 200.

[0049] In some embodiments, the inner wall of the tube body 140 is provided with a gas passage, the bottom wall of the cylinder body 120 and the inner wall of the side wall of the cylinder body 120 are both provided with a gas passage, and the gas passages in the inner wall of the side wall of the tube body 140, the inner wall of the bottom wall of the cylinder body 120 and the inner wall of the side wall of the cylinder body 120 are sequentially communicated to form the first gas passage 110.

[0050] In some embodiments, the second gas passages 220 are provided in the base 200, and the first gas passages 110 are communicated with the second gas passages 220, and the number of the first gas passages 110 and the second gas passages 220 can correspond or not correspond. In some specific embodiments, the number of the first gas passages 110 and the second gas passages 220 are selected to correspond.

[0051] In some embodiments, the first gas passages 110 can be provided with multiple or one; similarly, the second gas passages 220 can be provided with multiple or one. Specifically, in the present embodiment, the first gas passages 110 and the second gas passages 220 are both provided with multiple, and the number of the first gas passages 110 and the second gas passages 220 correspond. Meanwhile, the number of the second gas passages 220 corresponds to the number of the recesses 210.

[0052] That is, in the present embodiment, the number of the first gas passages 110, the second gas passages 220 and the recesses 210 are all three, and the three one-to-one correspond, that is, one end of the second gas passage 220 is communicated with the first gas passage 110, and the other end is communicated with the recess 210.

[0053] The vapor phase growth equipment further comprises a rotating sealing mechanism 300, which is sealingly arranged at the bottom of the process chamber 100 and connected with the bottom of the tube body 140 to drive the base 200 to rotate. The rotating sealing mechanism 300 is provided with a driving gas inlet device (not marked in the figure) communicated with the first gas passage 110 to provide driving gas for rotating the substrate in the recess 210.

[0054] In some embodiments, the rotating sealing mechanism 300 is connected to the bottom wall of the tube body 140, and the rotating sealing mechanism 300 is in communication with the first gas channel 110. Specifically, the driving gas supply device in the rotating sealing mechanism 300 is in communication with the first gas channel 110. In some embodiments, the rotating sealing mechanism 300 is used to drive the tube body 140 to rotate, thereby driving the susceptor 200 to rotate.

[0055] Meanwhile, the driving gas supply device in the rotating sealing mechanism 300 can provide gas, which enters the recess 210 through the first gas channel 110 and the second gas channel 220, and drive the substrate to rotate, that is, the rotating sealing mechanism 300 drives the susceptor 200 to rotate, while the substrate can rotate, which is beneficial to make the heating of the substrate more uniform during the process, and also makes the process gas above the substrate mix more uniformly to facilitate uniform film formation.

[0056] In some specific embodiments, the rotating sealing mechanism 300 is a magnetic fluid rotating sealing assembly, and the driving gas supply device is set in a conventional manner.

[0057] The vapor phase growth apparatus further comprises a heating device 400, which comprises a heating body 410 and a heating support seat 420 supporting the heating body 410. The heating body 410 is located in the barrel 120 and below the susceptor 200. The heating support seat 420 extends from the barrel 120 towards the tube body 140, penetrates the tube body 140 and is fixed on the rotating sealing mechanism 300 to remain stationary during the rotation of the rotating sealing mechanism 300 driving the barrel 120. The heating body of the heating device 400 is located below the susceptor in the barrel 120, which can reduce or avoid the adverse effects of corrosive gas.

[0058] Since the tube body 140 is arranged between the barrel 120 and the rotating sealing mechanism 300, the distance between the heating device 400 and the rotating sealing mechanism 300 is increased, and the rotating driving device is reduced or avoided from being significantly affected by the heater.

[0059] In some embodiments, the heating body 410 is a resistance heater, or other devices capable of achieving temperature rise.

[0060] In some embodiments, the heating support seat 420 has a spacing between the barrel 120 and the tube body 140, so as to facilitate the installation of the heating support seat 420, and to avoid collision and friction between the barrel 120, the tube body 140 and the heating support seat 420 during rotation. In some embodiments, the heating support seat 420 is provided with a power supply circuit, such as an electrode. The heating body on the heating body 410, such as a resistance wire, is electrically connected to the circuit and is electrically connected to an external power supply device through the circuit, so as to achieve the heating of the heating body 410.

[0061] In some embodiments, at least one arc-shaped air passage 211 is formed in the recess 210. Specifically, one arc-shaped air passage 211 can be formed in the recess 210, or multiple arc-shaped air passages 211 can be formed in the recess 210. In the present embodiment, multiple arc-shaped air passages 211 are formed in the recess 210.

[0062] It is worth noting that, in the present solution, multiple refers to two or more than two, and here three arc-shaped air passages 211 are taken as an example.

[0063] In some embodiments, referring to Figure 2 , the multiple arc-shaped air passages 211 are uniformly distributed around the axis of the recess 210 in the recess 210, and one end of the arc-shaped air passage 211 is close to the center of the recess 210, and the other end is away from the center of the recess 210. In the present embodiment, the end of the arc-shaped air passage 211 close to the center of the recess 210 is defined as the gas inlet end 212, and the gas inlet end 212 is in communication with the second air passage 220, so that the gas in the second air passage 220 can enter the arc-shaped air passage 211 and act on the bottom surface of the substrate from the arc-shaped air passage 211, driving the wafer substrate to rotate. Since the arc-shaped air passage 211 is arranged in an arc shape, the gas moves in the arc-shaped air passage 211, driving the substrate to rotate. The shape and arrangement of each arc-shaped air passage are conventional technical means in the art, which are necessary to enable the substrate to rotate.

[0064] In some embodiments, referring to Figure 2 , Figure 3 and Figure 4 , the first air passage 110, the second air passage 220 and the recess 210 correspond one by one, and since multiple arc-shaped air passages 211 are arranged in each recess 210, each second air passage 220 corresponds to the gas inlet end 212 of multiple arc-shaped air passages 211, that is, one end of the second air passage 220 is in communication with the corresponding first air passage 110, and the other end is in communication with the gas inlet end 212 in the corresponding recess 210. When multiple arc-shaped air passages 211 are arranged, the second air passage 220 is in communication with the gas inlet end 212 of one arc-shaped air passage 211, and the second air passage 220 after the gas inlet end 212 is branched to be in communication with the gas inlet end 212 of the remaining arc-shaped air passages 211; or the second air passage 220 extends to the center of the recess 210 and branches at the center of the recess 210, and the branch of the second air passage 220 is in communication with the gas inlet end 212 of each arc-shaped air passage 211, so that the movement path length of the gas in the second air passage 220 is the same, thereby making the gas flow in each arc-shaped air passage 211 uniform, facilitating the more stable rotation of the substrate. In the present embodiment, the connection mode of the second air passage 220 and the multiple gas inlet ends 212 in the recess 210 is not specifically limited, and different connection modes can be selected according to the actual working conditions in the actual processing process.

[0065] Referring toFigure 1 The barrel body 120 includes a hollow bottom plate 123 and a barrel body 122 which is arranged around the hollow bottom plate 123 and has two open ends;

[0066] The base 200 is fixedly arranged on the top of the barrel body 120 to cover the top opening of the barrel body 120;

[0067] The first air duct 110 extends in the hollow bottom plate 123 along the radial direction of the hollow bottom plate 123 and extends in the barrel body 122 along the axial direction of the barrel body 120.

[0068] In some embodiments, referring to Figure 1 The hollow bottom plate 123 is the bottom wall of the barrel body 120, and the hollow bottom plate 123 has the same shape as the barrel body 120, and the first air duct 110 extends in the hollow bottom plate 123 along the radial direction of the hollow bottom plate 123.

[0069] In some embodiments, the barrel body 120 and the tube body 140 are both cylindrical and arranged in communication. Specifically, the hollow bottom plate 123 is annular and has an outer edge and an inner edge, the base 200 is arranged at one end of the barrel body 122, the outer edge of the hollow bottom plate 123 is fixedly arranged at the other end of the barrel body 122, and the tube body 140 is fixedly arranged at the inner edge of the hollow bottom plate 123.

[0070] In some embodiments, the hollow bottom plate 123 and the barrel body 122 can be fixedly connected.

[0071] In some embodiments, the hollow bottom plate 123 and the barrel body 122 can be detachably connected.

[0072] In some specific embodiments, referring to Figure 5 and Figure 6 The barrel body 120 further includes a sleeve ring 510 and a fixing member 520, the barrel body 120 includes a barrel flange 124, the bottom surface of the barrel flange 124 is attached to the top surface of the hollow bottom plate 123 to expose the edge of the top surface of the hollow bottom plate 123, one end surface of the sleeve ring 510 abuts against the edge of the top surface of the hollow bottom plate 123, the inner wall of the sleeve ring 510 is attached to the side wall and at least part of the top surface of the barrel flange 124, at least part of the other end surface of the sleeve ring 510 abuts against the side wall of the barrel body 120, and the fixing member 520 is arranged in the hollow bottom plate 123 in sequence after penetrating through the sleeve ring 510, the side wall of the barrel flange 124 and the hollow bottom plate 123 to detachably connect the barrel body 120 and the hollow bottom plate 123.

[0073] In some embodiments, an accommodation space is formed between the sleeve ring 510, the side wall of the barrel body 122 and the barrel flange 124, the accommodation space is located between the fixing member 520 and the side wall of the barrel body 120, and an inclined spring 530 is arranged in the accommodation space to improve the sealing reliability.

[0074] Referring to Figure 2 , Figure 5 and Figure 7 , the top surface of the barrel body 122 is provided with at least one clamping groove 121, the base 200 comprises a bottom-opened cover 240, the sidewall of the cover 240 is provided with a ring body 250, the ring body 250 is provided with at least one protrusion 230, and the protrusion 230 is located in the cover 240; after the base 200 is arranged on the top surface of the barrel body 122, each clamping groove 121 is connected with each protrusion 230 in a concave-convex matching mode, and the bottom surface of the ring body 250 is attached to the top surface of the barrel body 122.

[0075] In some embodiments, the joint between the cover 240 and the barrel 120 is located in the cover 240, avoiding the separation between the cover 240 and the barrel 120 during the rotation process, especially during the high-speed rotation process. In addition, the outer sidewall of the cover 240 can be designed to have a geometric shape suitable for the gas flow field, so as to avoid the exposure of the joint between the protrusion 230 and the clamping groove 121 to the gas flow field and cause turbulence.

[0076] In some embodiments, the inner wall edge of the cover 240 is formed with the ring body 250, when the barrel 120 and the base 200 are connected, the protrusion 230 and the clamping groove 121 are connected, thereby positioning the position of the base 200 of the barrel 120, and the relative positions of the protrusion 230, the clamping groove 121, the outlet of the first gas channel 110 and the inlet of the second gas channel 220 are designed so that, after the protrusion 230 and the clamping groove 121 are connected, the second gas channel 220 and the first gas channel 110 are communicated, and it is unnecessary to reduce the dislocation between the second gas channel 220 and the first gas channel 110.

[0077] The outlet of the first gas channel 110 is located on the top surface of the barrel body 122, and the inlet of the second gas channel 220 is located on the side of the ring body 250 facing the top surface of the barrel body 122, and the outlet of the first gas channel 110 is in butt joint communication with the inlet of the second gas channel 220.

[0078] In some embodiments, the cross-sectional shape of the first gas channel 110 can be circular or polygonal; similarly, the cross-sectional shape of the second gas channel 220 can be circular or polygonal; either the first gas channel 110 and the second gas channel 220 can be circular or polygonal, or one of the first gas channel 110 and the second gas channel 220 can be circular and the other can be polygonal, as long as the gas in the first gas channel 110 can enter the second gas channel 220.

[0079] In some embodiments, referring to Figure 8 and Figure 9 , the number of recesses 210 is at least two, one end of the second gas channel 220 is communicated with the first gas channel 110, extends from the edge of the base 200 to the middle part of the base 200, and then communicates with each recess 210.

[0080] In some embodiments, since the recess 210 is provided with multiple, here taking three as an example, one end of the second gas channel 220 is communicated with the first gas channel 110, and the other end has multiple branch pipes 221, which are respectively communicated with corresponding recesses 210.

[0081] In some embodiments, multiple arc-shaped gas channels 211 are provided in the recess 210, so that one end of the branch pipe 221 is communicated with the second gas channel 220, and the other end is communicated with the gas inlet end 212 of the arc-shaped gas channel 211. The branch pipe 221 can be selected to be communicated with the gas inlet end 212 of one arc-shaped gas channel 211, and the branch pipe 221 after the gas inlet end 212 branches and is respectively communicated with the gas inlet end 212 of the remaining arc-shaped gas channel 211; or the branch pipe 221 is selected to extend to the center of the recess 210 and branch at the center of the recess 210, and the branch of the branch pipe 221 is communicated with the gas inlet end 212 of each arc-shaped gas channel 211.

[0082] In some embodiments, the movement path length of the gas in the second gas channel 220 is the same, so that the gas flow in each arc-shaped gas channel 211 is uniform, which facilitates the more stable rotation of the substrate. In this embodiment, the communication mode of the branch pipe 221 and the multiple gas inlet ends 212 in the recess 210 is not specifically limited, and in the actual processing process, different communication modes are selected according to the actual working conditions.

[0083] In some embodiments, the cylinder body 120 and the base 200 are integrated structures.

[0084] In some embodiments, the pipe body 140 and the cylinder body 120 are integrated structures.

[0085] In some embodiments, the rotary sealing mechanism 300 includes an inner sleeve, an outer sleeve, and a driving mechanism rotatably arranged at the bottom of the inner sleeve. The inner sleeve is connected to the pipe body 140 through the bottom surface of the process chamber 100 in a dynamic sealing manner. The outer sleeve is sleeved on the inner sleeve and fixedly arranged on the bottom surface of the process chamber 100 to strengthen the sealing relationship between the inner sleeve and the process chamber 100. The driving mechanism is arranged at the side of the middle part of the inner sleeve to drive the rotation of the inner sleeve. The heating support seat 420 penetrates through the pipe body 140 and then penetrates through the inner sleeve and is fixedly arranged at the bottom of the rotary sealing mechanism 300.

[0086] In some embodiments, the rotary sealing mechanism 300 is also provided with a condenser pipe 330, which is fixedly arranged on the outer sleeve to cool it.

[0087] The implementation principle of the embodiment of the gas phase growth equipment is that a wafer or other substrate is placed in the recess 210, the rotating sealing mechanism 300 is started, the cylinder 120 and the base 200 are driven to rotate, at this time the base 200 drives the wafer or other substrate on the base 200 to rotate around the axis of the heating device 400, and the rotating sealing mechanism 300 supplies gas, the gas enters the arc-shaped gas channel 211 after passing through the first gas channel 110 and the second gas channel 220, and drives the wafer or other substrate in the recess 210 to rotate by itself in the recess 210, at this time the heating device 400 is in a stationary state. Through the setting mode, the double-rotation mode of revolution of multiple wafers or other substrates and rotation of the wafers or other substrates is introduced, which is beneficial to improve the mixing uniformity of the reaction gas above the wafers or other substrates and the temperature uniformity of the base 200.

[0088] Although the embodiments of the present application have been described in detail above, it is obvious to those skilled in the art that various modifications and changes can be made to the embodiments. However, it should be understood that such modifications and changes are within the scope and spirit of the present application described in the claims. Moreover, the present application described herein can have other embodiments and can be implemented or realized in various ways.

Claims

1. A vapor phase growth apparatus characterized by comprising: The process chamber (100) comprises: a barrel (120) arranged in the process chamber (100) and a pipe (140) arranged at the bottom of the barrel (120) and communicating with the inside of the barrel (120); a first air duct (110) extending in the side wall of the pipe (140), the bottom wall of the barrel (120) and the side wall of the barrel (120) in sequence; a pedestal (200) arranged at the top of the barrel (120) to shield the top opening of the barrel (120), the pedestal (200) being provided with a recess (210) for placing a substrate, the inside of the pedestal (200) being provided with a second air duct (220) communicating with the first air duct (110) at one end and the recess (210) at the other end; a rotary sealing mechanism (300) arranged at the bottom of the process chamber (100) and connected with the bottom of the pipe (140) to drive the rotation of the pedestal (200), the rotary sealing mechanism (300) being provided with a driving gas inlet device communicating with the first air duct (110) to provide driving gas for rotating the substrate in the recess (210); a heating device (400) comprising a heating body (410) and a heating support seat (420) supporting the heating body (410), the heating body (410) being located below the pedestal (200) in the barrel (120), the heating support seat (420) extending from the barrel (120) towards the pipe (140), penetrating the pipe (140) and being fixed to the rotary sealing mechanism (300) to remain stationary during the rotation of the barrel (120) driven by the rotary sealing mechanism (300). The number of the second air ducts (220) and the first air ducts (110) is at least two and they communicate one by one, and the number of the recesses (210) is at least two and they communicate one by one with the second air ducts (220).

2. The vapor phase growth apparatus according to claim 1, wherein The barrel (120) comprises a hollow bottom plate (123) and a barrel body (122) surrounding the hollow bottom plate (123) and having both ends open; 3. The vapor phase growth apparatus according to claim 1, wherein The pedestal (200) is fixed to the top of the barrel body (122) to shield the top opening of the barrel body (122); The first air duct (110) extends in the hollow bottom plate (123) along the radial direction of the hollow bottom plate (123) and in the side wall of the barrel body (122) along the axial direction of the barrel body (122). The top surface of the barrel body (122) is provided with at least one clamping groove (121), the pedestal (200) comprises a cover body (240) with an open bottom, the side wall of the cover body (240) is provided with a ring body (250), the ring body (250) is provided with at least one protrusion (230), and the protrusion (230) is located in the cover body (240).

4. The vapor phase growth apparatus according to claim 3, wherein ​ The base (200) is arranged on the top surface of the barrel body (122), each clamping groove (121) is in engagement with each protrusion (230) in a concave-convex manner, and the bottom surface of the ring body (250) is attached to the top surface of the barrel body (122).

5. The vapor phase growth apparatus according to claim 4, wherein The outlet of the first air passage (110) is located on the top surface of the barrel body (122), the inlet of the second air passage (220) is located on the side of the ring body (250) facing the top surface of the barrel body (122), and the outlet of the first air passage (110) is in communication with the inlet of the second air passage (220).

6. The vapor phase growth apparatus according to claim 3, wherein The sleeve ring (510) and the fixing member (520) are further included, the barrel body (122) comprises a barrel flange (124), the bottom surface of the barrel flange (124) is attached to the top surface of the hollow bottom plate (123) so that the edge of the top surface of the hollow bottom plate (123) is exposed, one end surface of the sleeve ring (510) is abutted against the edge of the top surface of the hollow bottom plate (123), the inner wall of the sleeve ring (510) is attached to the side wall and at least part of the top surface of the barrel flange (124), at least part of the other end surface of the sleeve ring (510) is abutted against the side wall of the barrel body (122), and the fixing member (520) is sequentially penetrated through the sleeve ring (510), the side wall of the barrel flange (124) and the hollow bottom plate (123) and then detachably arranged on the hollow bottom plate (123) so as to strengthen the sealing connection relationship between the barrel body (122) and the hollow bottom plate (123).

7. The vapor phase growth apparatus according to claim 6, wherein The sleeve ring (510), the side wall of the barrel body (122) and the barrel flange (124) form an accommodation space therebetween, the accommodation space is located between the fixing member (520) and the side wall of the barrel body (120), and an inclined spring is arranged in the accommodation space so as to improve the sealing reliability.

8. The vapor phase growth apparatus according to claim 1, wherein The number of the recesses (210) is at least two, one end of the second air passage (220) is communicated with the first air passage (110), extends from the edge of the base (200) to the middle part of the base (200) and then communicates with each recess (210) in the direction from the edge of the base (200) to the middle part of the base (200).

9. The vapor phase growth apparatus according to claim 1, wherein The barrel body (120) and the base (200) are in an integrated structure.

10. The vapor phase growth apparatus according to claim 1, wherein The pipe body (140) and the barrel body (120) are in an integrated structure.

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