SIC single-sided half-bridge module
By using metal bonding supports and heat dissipation pillars in the SiC half-bridge module, the problem of low heat dissipation efficiency was solved, achieving efficient heat transfer and stable chip operation.
Patent Information
- Application Number
- CN202422953045.2
- Authority / Receiving Office
- CN · China
- Patent Type
- Utility models(China)
- Current Assignee / Owner
- Filing Date
- 2024-11-29
- Publication Date
- 2025-12-19
- Estimated Expiration
- 2034-11-29
AI Technical Summary
Existing SiC half-bridge modules have low heat dissipation efficiency, which leads to increased chip temperature, potentially causing thermal failure and power loss, and increasing maintenance costs.
A metal bonding bracket is used for electrical connection between the chip and the substrate, and heat transfer efficiency is improved through heat dissipation pillars and water cooling mechanism.
It improves the module's heat dissipation efficiency, extends the chip's lifespan, and enhances its operating performance and stability.
Smart Images
Figure CN223693118U_ABST
Abstract
Description
TECHNICAL FIELD
[0001] The utility model relates to a semiconductor technical field especially, it relates to a SIC single face half bridge module. BACKGROUND
[0002] Half bridge module is a kind of circuit module widely used in power electronics field, SiC single face half bridge module is the power electronic device manufactured based on silicon carbide (SiC) material, with unique performance advantage, is widely used in power conversion system, new energy generation, electric vehicle, industrial power system and aerospace etc.
[0003] At present, in SiC half bridge module packaging structure, chip and AMB ceramic substrate are usually electrically connected by metal bonding wire (aluminum wire, aluminum-clad copper wire, copper wire), since its wire diameter is thin, and heat dissipation area is limited, therefore, there is limitation in heat dissipation, and metal bonding wire itself has certain thermal resistance, which can hinder heat from chip to AMB ceramic substrate through bonding wire, with the increase of working temperature, the thermal resistance of metal bonding wire can be further increased, thereby reducing heat dissipation efficiency.
[0004] Low heat dissipation efficiency means that the heat generated by chip during working process cannot be effectively transferred to AMB ceramic substrate, resulting in the increase of chip temperature, and long-time high-temperature work can make chip reach its thermal limit, thereby causing thermal failure, and further increasing chip power loss, which can lead to frequent failure or performance decline of module, so maintenance cost needs to be increased to replace or repair module. UTILITY MODEL CONTENTS
[0005] In view of the problems existing in the prior art, the utility model provides a SIC single face half bridge module, which can effectively solve the problems existing in the prior art.
[0006] The technical scheme of the utility model is:
[0007] According to one aspect of the utility model, it comprises: a substrate, the substrate is distributed with a plurality of chips at one end, the substrate is fixed with a heat sink at the other end, the heat sink is distributed with a plurality of heat dissipation struts at intervals, the projection area of a plurality of heat dissipation struts covers at least one chip, further comprising a plurality of metal bonding supports, one end of the metal bonding support is connected to the substrate, and the other end is connected to one of the chips.
[0008] Further, the projection area of a plurality of heat dissipation struts covers all chips.
[0009] Further, the substrate comprises a first metal part, a second metal part and a third metal part;Two first metal arms are arranged at both ends of the first metal part along the first direction respectively;
[0010] Two second metal arms are arranged at two ends of the second metal part along a second direction, and the two second metal arms are arranged between the two first metal arms.
[0011] The third metal part is arranged between the first metal part and the second metal part, one end of the third metal part is arranged along the first direction, and the third metal part is arranged between the two second metal arms.
[0012] Further, a plurality of the chips are symmetrically arranged on the two first metal arms along the first direction; a plurality of the chips are symmetrically arranged on the two second metal arms along the first direction, and the chips on the first metal arms and the chips on the second metal arms are further staggered in the first direction.
[0013] Further, the chips on the first metal arms are electrically connected with the second metal arms through the metal bonding support;
[0014] The chips on the second metal arms are electrically connected with the third metal part through the metal bonding support.
[0015] Further, the two end portions of the second metal arm are connected through a metal bonding wire.
[0016] Further, a solder layer is fixed between the substrate and the heat dissipation plate.
[0017] Further, the metal bonding support is a copper product.
[0018] By adopting the technical scheme, the present application has the beneficial effects compared with the prior art:
[0019] In the present application, the chips and the substrate are electrically connected through the metal bonding support, the metal bonding support has a large contact area, can effectively disperse and transfer heat to a larger area, has lower thermal resistance compared with the bonding wire, has stronger current carrying capacity, and the increase of the contact area is beneficial to the interference between currents, thereby reducing the stray inductance; and the metal bonding support has low stray inductance and strong outflow capacity; the present application arranges the positions of the chips in the coverage range of the heat dissipation pillars, under the water-cooled heat dissipation mechanism, the heat generated by the chips during operation can be efficiently taken away by the heat dissipation pillars and the water flow, thereby greatly improving the heat dissipation efficiency of the module, enhancing the operation performance of the chips, prolonging the service life of the chips, and improving the stability of the entire module; the layout position of the chips is matched with the metal bonding support, and the heat dissipation effect of the chips is improved. BRIEF DESCRIPTION OF DRAWINGS
[0020] In order to more clearly illustrate the technical solutions in the embodiments of the present application or the prior art, the following will briefly introduce the drawings needed to be used in the embodiments or prior art description. Obviously, the drawings in the following description are only some embodiments of the present application, and all other drawings obtained by those of ordinary skill in the art without creative labor under the premise of can also belong to the scope of protection of the present application.
[0021] Figure 1 For the three-dimensional structure of the present application Figure 1 ;
[0022] Figure 2 For the plane structure of the present application Figure 1 ;
[0023] Figure 3 For the three-dimensional structure of the present application Figure 2 ;
[0024] Figure 4 For the three-dimensional structure of the present application, the three-dimensional structure of the substrate is shown.
[0025] Figure 5 For the plane structure of the present application Figure 2 ;
[0026] In the figure: substrate-1, first metal part-11, first metal arm-111, second metal part-12, second metal arm-121, third metal part-13, chip-2, lead frame-3, metal bonding wire-4, heat dissipation plate-5, heat dissipation pillar-51, solder layer-6, metal bonding support-7, first direction-N, second direction-S. DETAILED DESCRIPTION
[0027] The present application will be further described in detail below in combination with the drawings and embodiments. It is particularly pointed out that the following embodiments are only used to illustrate the present application, but do not limit the scope of the present application. Similarly, the following embodiments are only some embodiments of the present application, not all embodiments, and all other embodiments obtained by those of ordinary skill in the art without creative labor under the premise of belong to the scope of protection of the present application.
[0028] As shown in Figures 1 to 5 , the present application provides a SIC single-sided half-bridge module.
[0029] Please refer to Figure 1 , Figure 2 and Figure 4, including: substrate 1, as preferred, substrate 1 is AMB insulating ceramic substrate (silicon nitride, aluminum nitride, etc.), double-sided copper clad for module circuit etching, in between is ceramic material to play the role of insulation. Substrate 1 includes a first metal part 11, a second metal part 12 and a third metal part 13; both ends of the first metal part 11 are respectively provided with two first metal arms 111 extending along the first direction N; both ends of the second metal part 12 are respectively provided with two second metal arms 121 extending along the second direction S, and the two second metal arms 121 are arranged between the two first metal arms 111; the third metal part 13 is arranged between the first metal part 11 and the second metal part 12, one end of the third metal part 13 extends along the first direction N, and the third metal part 13 is arranged between the two second metal arms 121.
[0030] Please refer to Figure 1 , Figure 2 and Figure 4 , one end of the substrate 1 is distributed with a plurality of chips 2, as preferred, the chip 2 is a third generation wide bandgap semiconductor chip, and a plurality of chips 2 are symmetrically arranged on the two first metal arms 111 along the first direction N; a plurality of chips 2 are symmetrically arranged on the two second metal arms 121 along the first direction N, and the chips 2 located on the first metal arm 111 and the chips 2 located on the second metal arm 121 are also staggered with each other in the first direction N. Specifically, there are sixteen chips 2, which are equally distributed on the two first metal arms 111 and the two second metal arms 121.
[0031] Please refer to Figure 1 and Figure 2 , a plurality of lead frames 3 are further fixed on both sides of the upper end surface of the substrate 1, the lead frame 3 serves as an electrical terminal to lead out the electrical performance of the module and connect with the outside world.
[0032] Please refer to Figure 1 and Figure 2 , further comprising metal bonding wires 4 and metal bonding supports 7, the metal bonding support 7 is a copper product. The metal bonding wire 4 and the metal bonding support 7 are used for electrical connection between the chip 2 and the substrate 1, one end of the metal bonding support 7 is connected to the substrate 1, and the other end is connected to one of the chips 2. The chip 2 located on the first metal arm 111 is connected to the second metal arm 121 through the metal bonding support 7; the chip 2 located on the second metal arm 121 is connected to the third metal part 13 through the metal bonding support 7.
[0033] Please refer to Figure 1 and Figure 2 , the two end portions of the second metal arm 121 are connected by the metal bonding wire 4, which improves the problem of external bridge source potential difference, optimizes the switching characteristics and ensures the consistency of the switching performance of the chip 2.
[0034] Please refer to Figure 1 andFigure 3 The other end of the substrate 1 is fixed with a heat dissipation plate 5, and a plurality of heat dissipation pillars 51 are arranged in the heat dissipation plate 5, and the projection area of the plurality of heat dissipation pillars 51 covers at least one chip 2; in this embodiment, the projection area of the plurality of heat dissipation pillars 51 covers all the chips 2. The heat dissipation plate 5 is used to transfer the heat of the module to the outside. In this embodiment, the plurality of chips 2 are all located in the Pin-fin area of the heat dissipation pillars 51, and in the water cooling process, the heat generated by the working of the chips 2 is fully conducted out by the Pin-fin of the heat dissipation pillars 51 and the water flow.
[0035] Please refer to Figure 5 The solder layer 6 is fixed between the substrate 1 and the heat dissipation plate 5.
[0036] In this embodiment, the surface of the half-bridge module is plastic-sealed by epoxy resin (not shown in the figure).
[0037] The above embodiments are only used to illustrate the technical solutions of the present application, but not to limit it; although the present application has been described in detail with reference to the foregoing embodiments, those skilled in the art should understand that the technical solutions recorded in the foregoing embodiments can still be modified, or some technical features can be replaced equivalently; and these modifications or replacements do not make the essence of the corresponding technical solutions deviate from the spirit and scope of the technical solutions of the embodiments of the present application.
Claims
1. A SIC single-sided half-bridge module comprising: The substrate (1) is provided with a plurality of chips (2) at one end, and a heat dissipation plate (5) is fixed at the other end of the substrate (1), a plurality of heat dissipation pillars (51) are distributed in the heat dissipation plate (5), the projection area of a plurality of heat dissipation pillars (51) covers at least one chip (2), characterized in that a plurality of metal bonding supports (7) are further included, one end of the metal bonding support (7) is connected to the substrate (1), and the other end is connected to one of the chips (2).
2. A half bridge module as claimed in claim 1, characterised in that, The projection area of a plurality of heat dissipation pillars (51) covers all chips (2).
3. A half bridge module as claimed in claim 1, characterised in that, The substrate (1) includes a first metal part (11), a second metal part (12), and a third metal part (13); two first metal arms (111) are arranged at both ends of the first metal part (11) in a first direction (N); Two second metal arms (121) are arranged at both ends of the second metal part (12) in a second direction (S), and the two second metal arms (121) are arranged between the two first metal arms (111); The third metal part (13) is arranged between the first metal part (11) and the second metal part (12), one end of the third metal part (13) extends in the first direction (N), and the third metal part (13) is arranged between the two second metal arms (121).
4. A half bridge module as claimed in claim 3, characterised in that, A plurality of chips (2) are symmetrically arranged on the two first metal arms (111) in the first direction (N); a plurality of chips (2) are symmetrically arranged on the two second metal arms (121) in the first direction (N), and the chips (2) on the first metal arm (111) and the chips (2) on the second metal arm (121) are further staggered in the first direction (N).
5. A half bridge module as claimed in claim 4, characterised in that, The chips (2) on the first metal arm (111) are electrically connected to the second metal arm (121) through the metal bonding support (7); The chips (2) on the second metal arm (121) are electrically connected to the third metal part (13) through the metal bonding support (7).
6. A half bridge module as claimed in claim 4, characterised in that, Further comprising a metal bonding wire (4), the two ends of the second metal arm (121) are connected by the metal bonding wire (4).
7. A half bridge module as claimed in claim 1, characterised in that, The substrate (1) and the heat dissipation plate (5) are fixed with a solder layer (6).
8. A SIC single half bridge module as defined in claim 1, wherein, The metal bonding support (7) is made of copper.