Vapor deposition device

Abstract

The embodiment of the specification provides a vapor deposition device, comprising: a deposition main body, the deposition main body comprising a first cavity, a second cavity and a first side wall; the first cavity is arranged in the second cavity, and the first cavity is configured to contain a to-be-deposited object; a first cavity is defined by the first side wall, a plurality of through holes are formed in the first side wall, and the first cavity and the second cavity are communicated through the through holes; the first input pipe is communicated with the first cavity; the second input pipe is communicated with the second cavity; and the output pipe is communicated with the first cavity.

Description

Technical Field

[0001] This specification relates to the field of inorganic synthetic chemistry technology, and in particular to a vapor deposition apparatus. Background Technology

[0002] Chemical vapor deposition (CVD) is a technique for preparing inorganic materials by using one or more gaseous compounds or elements containing thin film elements to chemically react on a substrate surface to generate a thin film.

[0003] When performing chemical vapor deposition on complex surfaces (large areas, irregular shapes), the commonly used equipment in chemical vapor deposition methods usually cannot simultaneously achieve high deposition efficiency, high uniformity and high utilization, and is difficult to adapt to deposition on complex surfaces.

[0004] Therefore, it is desirable to provide a vapor deposition apparatus that can achieve thin film deposition on complex surfaces while maintaining high deposition efficiency, high uniformity, and high utilization. Utility Model Content

[0005] This specification provides one or more embodiments of a vapor deposition apparatus, comprising: a deposition body, the deposition body including a first cavity, a second cavity, and a first sidewall; the first cavity being disposed within the second cavity and configured to accommodate an object to be deposited; the first sidewall surrounding the first cavity, the first sidewall having a plurality of through holes connecting the first cavity and the second cavity; a first input pipe communicating with the first cavity; a second input pipe communicating with the second cavity; and an output pipe communicating with the first cavity.

[0006] In some embodiments, the vapor deposition apparatus further includes a cover detachably connected to the deposition body, the cover having a gas channel and an output pipe, the output pipe being connected to the first cavity through the gas channel.

[0007] In some embodiments, the vapor deposition apparatus further includes a second sidewall, a first bottom wall, and a second bottom wall, the first bottom wall and the first sidewall forming the first cavity, the second sidewall surrounding the first sidewall, and the second bottom wall located on the bottom side of the first bottom wall, the first sidewall, the second sidewall, and the second bottom wall forming an annular second cavity.

[0008] In some embodiments, the plurality of through holes are arranged in an array, wherein the columns in the array are parallel to the axial direction of the annular second cavity, and the rows in the array extend circumferentially along the annular second cavity.

[0009] In some embodiments, the first input tube and the second input tube are both located at the bottom end along the axial direction of the annular second cavity, and the output tube is located at the top end along the axial direction of the annular second cavity; the vapor deposition apparatus further includes a support structure disposed in the first cavity; the bottom row of the plurality of through holes is flush with the top surface of the support structure.

[0010] In some embodiments, in each column of the plurality of through holes, the through holes closer to the bottom have smaller opening areas.

[0011] In some embodiments, the first input tube is located inside the second input tube.

[0012] In some embodiments, the vapor deposition apparatus further includes a first heating assembly, the first heating assembly including a side portion and a bottom portion; the side portion is disposed around the outside of the second sidewall; the bottom portion is located on the bottom side of the second bottom wall.

[0013] In some embodiments, the vapor deposition apparatus further includes a second heating element disposed in the first cavity.

[0014] In some embodiments, the first bottom wall and the first side wall surrounding the first cavity are made of at least one of graphite, high thermal conductivity ceramic and metal; the second side wall and the second bottom wall surrounding the second cavity are made of at least one of graphite, high thermal conductivity ceramic and metal. Attached Figure Description

[0015] This specification will be further described by way of exemplary embodiments, which will be described in detail with reference to the accompanying drawings. These embodiments are not limiting; in these embodiments, the same reference numerals denote the same structures, wherein:

[0016] Figure 1 These are exemplary structural diagrams of a vapor deposition apparatus according to some embodiments of this specification;

[0017] Figure 2 It is based on Figure 1 The diagram shows a cross-sectional view (AA) of the vapor deposition apparatus.

[0018] Figure 3 This is another exemplary cross-sectional view of the first and second sidewalls shown in some embodiments of this specification;

[0019] Figure 4 These are exemplary structural diagrams of through holes shown according to some embodiments of this specification;

[0020] Figure 5 This is another exemplary structural diagram of the through hole shown in some embodiments of this specification;

[0021] Figure 6 This is yet another exemplary structural diagram of a through hole shown in some embodiments of this specification. Detailed Implementation

[0022] To more clearly illustrate the technical solutions of the embodiments in this specification, the accompanying drawings used in the description of the embodiments will be briefly introduced below. Obviously, the drawings described below are merely some examples or embodiments of this specification. For those skilled in the art, these drawings can be applied to other similar scenarios without creative effort. Unless obvious from the context or otherwise specified, the same reference numerals in the drawings represent the same structures or operations.

[0023] It should be understood that the terms “system,” “device,” “unit,” and / or “module” used herein are one way to distinguish different components, elements, parts, sections, or assemblies at different levels. However, if other terms can achieve the same purpose, they may be replaced by other expressions.

[0024] As indicated in this specification and claims, unless the context clearly indicates otherwise, the words "a," "an," "an," and / or "the" do not specifically refer to the singular and may also include the plural. Generally speaking, the terms "comprising" and "including" only indicate the inclusion of expressly identified steps and elements, which do not constitute an exclusive list, and the method or apparatus may also include other steps or elements.

[0025] Chemical vapor deposition (CVD) is a technique that utilizes gaseous substances to generate chemical and transport reactions on a solid surface, producing solid deposits. In some embodiments, CVD apparatuses employ a showerhead-like structure, where gas is introduced through multiple holes similar to those in a showerhead, forming a thin film on the substrate surface. While this approach ensures high deposition efficiency and uniformity, it often struggles to guarantee high material utilization and is ill-suited for depositing on complex surfaces. In other embodiments, a flow channel structure is used, where the substrate is placed within a gas flow channel for CVD. This approach more easily achieves high material utilization and deposition on complex surfaces, but high uniformity remains a challenge. Both of these methods involve first mixing and reacting various raw material gases to generate a deposition gas, which is then delivered to the substrate surface for CVD. Consequently, the portion of the substrate surface initially exposed to the deposition gas produces a thicker film, while subsequent exposures result in a thinner film, leading to uneven film formation on the substrate surface.

[0026] Based on this, some embodiments of this specification provide a vapor deposition apparatus, including a deposition body, a first input pipe, a second input pipe, and an output pipe. Different gaseous raw materials required for chemical vapor deposition can be separated through the two input pipes, and after being preheated and activated, they can be uniformly mixed and reacted on the surface of the deposition workpiece through through holes on the sidewall. This can simultaneously achieve high deposition efficiency, high uniformity, and high utilization rate.

[0027] Figure 1 This is an exemplary structural diagram of a vapor deposition apparatus according to some embodiments of this specification. Figure 2 It is based on Figure 1 The diagram shows an AA cross-section of the vapor deposition apparatus.

[0028] In some embodiments, such as Figure 1 and Figure 2 As shown, the vapor deposition apparatus includes a deposition body, a first input pipe 30, a second input pipe 40, and an output pipe 50. The deposition body includes a first cavity 10, a second cavity 20, and a first sidewall 110. The first cavity 10 is disposed within the second cavity 20 and is configured to accommodate the object 60 to be deposited. The first sidewall 110 surrounds the first cavity 10 and has multiple through holes 111 that connect the first cavity 10 and the second cavity 20. The first input pipe 30 is connected to the first cavity 10. The second input pipe 40 is connected to the second cavity 20. The output pipe 50 is connected to the first cavity 10.

[0029] The deposition body refers to the main structure of the vapor deposition apparatus, used to achieve chemical vapor deposition of the object to be deposited. The object to be deposited may include a substrate, on which solid materials can be deposited through gas-phase chemical reactions between gaseous initial compounds.

[0030] In some embodiments, the deposition body may include a first cavity 10, a second cavity 20, and a first sidewall 110.

[0031] The first cavity 10 is a space for filling gas and performing vapor deposition. The first cavity 10 can be of various shapes, such as cylindrical, cubic, or polygonal prism. In some embodiments, the object to be deposited 60 is disposed in the first cavity 10. The shape of the first cavity 10 can be adapted to the object to be deposited 60. For example, if the object to be deposited 60 is a cylinder, and the solid material formed by the vapor-phase chemical reaction needs to be deposited on the outer surface of the cylinder, then the first cavity 10 is cylindrical, and the curvature of the inner surface of the first cavity 10 is the same as the curvature of the outer surface of the main body, so as to facilitate uniform deposition of the solid material; or, for example, if the object to be deposited 60 is a plate, and the solid material formed by the vapor-phase chemical reaction needs to be deposited on a plane of the plate, then the first cavity 10 is cubic or polygonal prism, and the plane of the object to be deposited 60 is disposed close to a plane on the inner surface of the first cavity 10, and the two planes are parallel to each other, so as to facilitate uniform deposition of the solid material. The object to be deposited 60 can also be other irregular shapes, and the inner surface of the first cavity 10 can be set to an irregular shape that matches it, thereby improving the uniformity of deposition.

[0032] The second cavity 20 is a space for filling gaseous raw materials. The second cavity 20 can have various shapes, such as cylindrical, cubic, or polygonal prism. In some embodiments, the first cavity 10 is disposed within the second cavity 20. There can be a uniform or non-uniform gap between the first cavity 10 and the second cavity 20. The shape of the second cavity 20 can be the same as or different from that of the first cavity 10.

[0033] In some embodiments, the first cavity 10 is surrounded by a first sidewall 110. The first sidewall 110 may be located between the first cavity 10 and the second cavity 20, serving as the outer wall of the first cavity 10 and the inner wall of the second cavity 20. In some embodiments, the first sidewall 110 is provided with a plurality of through holes 111, and the first cavity 10 and the second cavity 20 can be interconnected through the plurality of through holes 111, so that two or more gases in the two cavities can mix and undergo a gas-phase chemical reaction to form a solid substance that is deposited on the object 60 to be deposited.

[0034] The first input pipe 30 is a conduit for transporting gaseous raw materials. In some embodiments, one end of the first input pipe 30 is connected to the first cavity 10, and the other end is connected to a gaseous raw material input source. In some embodiments, the first input pipe 30 is located at the bottom of the first cavity 10.

[0035] The second input pipe 40 is a conduit for transporting another gaseous raw material. In some embodiments, the second input pipe 40 is connected to the second cavity 20, and its other end is connected to another gaseous raw material input source. In some embodiments, the second input pipe 40 is located at the bottom of the second cavity 20.

[0036] It should be noted that the gaseous raw materials transported by the first input pipe 30 and the second input pipe 40 may both be one or more reactants participating in a chemical reaction, or one of them may be one or more reactants and the other may be a functional gas such as a carrier gas.

[0037] The first input tube 30 and the second input tube 40 can be made of at least one of graphite, high thermal conductivity ceramics and metals, which have excellent thermal conductivity and high temperature resistance, good chemical stability and mechanical strength, can resist corrosion and pressure changes, transport raw materials stably, and have a long service life.

[0038] The output pipe 50 is a conduit for outputting gas. In some embodiments, the output pipe 50 is connected to the first cavity 10. In some embodiments, the output pipe 50 is located at the top of the vapor deposition apparatus. It is understood that after the gaseous raw materials input into the two input pipes mix and undergo a gaseous chemical reaction, other gaseous compounds may be generated, which need to be discharged from the vapor deposition apparatus; at the same time, since the first input pipe 30 and the second input pipe 40 are continuously inputting gaseous raw materials, some gaseous raw materials may not react completely, and will also be discharged from the vapor deposition apparatus through the output pipe 50.

[0039] By setting a first cavity that matches the object to be deposited, it can adapt to deposition on complex surfaces and improve deposition uniformity. By setting a first input pipe and a second input pipe, the gas phase required for chemical vapor deposition can be separated, and the two gaseous raw materials are transported by the first input pipe and the second input pipe at the bottom of the vapor deposition device, respectively. By setting multiple through holes, the gaseous raw materials input from the two input pipes are mixed at the through holes to undergo a gas-phase chemical reaction. Compared with direct mixing reaction, the reaction time is delayed, so that the gaseous raw materials can be deposited on the surface of the object to be deposited immediately after the reaction at the through holes, reducing the loss during transportation, resulting in higher raw material utilization, ensuring that the raw materials are fully mixed and uniform, and the reaction products can be more evenly distributed on the object to be deposited to form a uniform film with high uniformity and high deposition efficiency. The gas is discharged from the top output pipe, which can ensure the smooth flow of gas in the device and ensure the efficiency of raw material transportation.

[0040] In some embodiments, such as Figure 1 As shown, the vapor deposition apparatus also includes a cover 70 that is detachably connected to the deposition body. Examples of detachable connections include threaded connections, snap-fit ​​connections, etc. The cover 70 is located on top of the vapor deposition apparatus and can be lifted to partially or completely detach from the deposition body, thereby allowing the operator to easily remove the object to be deposited 60 from the top of the vapor deposition apparatus and facilitating the cleaning and maintenance of the vapor deposition apparatus.

[0041] In some embodiments, the cover 70 is provided with a gas channel 51 and an output pipe 50. The output pipe 50 is connected to the first cavity 10 through the gas channel 51 to ensure smooth gas flow and improve work efficiency.

[0042] In some embodiments, such as Figure 1 As shown, the vapor deposition apparatus further includes a second sidewall 120, a first bottom wall 130, and a second bottom wall 140. The first bottom wall 130 and the first sidewall 110 form a first cavity 10, the second sidewall 120 surrounds the first sidewall 110, and the second bottom wall 140 is located on the bottom side of the first bottom wall 130. The first sidewall 110, the second sidewall 120, and the second bottom wall 140 form an annular second cavity 20. In some embodiments, such as Figure 1 As shown, the axis Z of the annular second cavity 20 can extend along the top and bottom directions.

[0043] In some embodiments, such as Figure 2 As shown, the annular second cavity 20 can be circular, that is, the cross-sections of the first sidewall 110 and the second sidewall 120 are both cylindrical.

[0044] Figure 3 This is another exemplary cross-sectional view of the first and second sidewalls shown in some embodiments of this specification.

[0045] In some embodiments, the cross-sectional shape of the first sidewall 110 and the second sidewall 120 can be any other regular or irregular polygon, for example... Figure 3 The hexagon shown.

[0046] In some embodiments, the cross-sectional shapes of the first sidewall 110 and the second sidewall 120 may be the same or different.

[0047] In some embodiments, the second cavity 20 is arranged around the first cavity 10, which is beneficial for the two gaseous raw materials in the second cavity 20 and the first cavity 10 to be uniformly mixed at the through hole, which is beneficial for uniform vapor deposition.

[0048] In some embodiments, such as Figure 1 As shown, the first input tube 30 is located inside the second input tube 40 to fit the annular second cavity 20.

[0049] By setting the relative positions of the first input pipe and the second input pipe in accordance with the first cavity and the second cavity, it is beneficial for the gaseous raw material to fill the first cavity and the second cavity more quickly and evenly.

[0050] Figure 4 This is an exemplary structural diagram of a through hole shown according to some embodiments of this specification.

[0051] In some embodiments, such as Figure 4As shown, multiple through holes 111 are arranged in an array, with the columns in the array parallel to the axial direction of the annular second cavity 20, and the rows in the array extending circumferentially along the annular second cavity 20. Wherein, as... Figure 1 , Figure 2 and Figure 4 As shown, the axis direction is the Z direction.

[0052] The rows extending circumferentially in the through holes of the array allow the gaseous raw materials to mix more evenly at the through holes. The columns extending axially in the through holes of the array allow the gaseous raw materials to mix at different positions along the axial direction, avoiding uneven deposition at the bottom due to gravity after a single mixing. The array of through holes ensures the uniformity of gaseous raw material mixing and can quickly and evenly fill the first cavity, improving reaction efficiency and ensuring uniform deposition.

[0053] Figure 5 This is another exemplary structural diagram of a through hole shown in some embodiments of this specification.

[0054] In some embodiments, such as Figure 5 As shown, in each column of the multiple through holes 111, the opening area of ​​the through hole 111 closer to the bottom is smaller.

[0055] Since the gaseous feedstock is transported from bottom to top, the reaction at the bottom through-hole will proceed first compared to the top. Therefore, the concentration of the product at the bottom may be greater than that at the top. That is, the concentration of the product gradually decreases from bottom to top. In order to ensure uniformity as much as possible, the opening area of ​​the through-hole closer to the bottom is set smaller. This results in a lower degree of mixing and reaction of the two gaseous feedstocks at the bottom, so as to avoid the product generated by the reaction accumulating too thickly at the bottom of the vapor deposition device under the influence of gravity.

[0056] Figure 6 This is yet another exemplary structural diagram of a through hole shown in some embodiments of this specification.

[0057] In some embodiments, such as Figure 6 As shown, the opening size of the through hole 111 is smaller on the side closer to the first cavity 10 and larger on the side closer to the second cavity 20. That is, the cross-section of the through hole 111 in its thickness direction can be frustum-shaped.

[0058] In some embodiments, the gas pressure of the gaseous raw material in the second cavity 20 may be greater than the gas pressure in the first cavity 10.

[0059] By setting different opening sizes on both sides of the through hole and different gas pressures in the two chambers, it is possible to minimize the entry of gas from the first chamber into the second chamber, which is beneficial for the entry of gaseous raw materials from the second chamber into the first chamber, thereby ensuring that the products after the reaction are all in the first chamber for vapor deposition.

[0060] In some embodiments, the first input tube 30 and the second input tube 40 are both located at the bottom end along the axial direction of the annular second cavity 20, and the output tube 50 is located at the top end along the axial direction of the annular second cavity 20. Figure 1 As indicated by the arrow, the two gaseous raw materials are conveyed from the bottom to the top through the first input pipe 30 and the second input pipe 40, respectively. During the conveying process, the gaseous raw materials can fully fill the two input pipes, thereby ensuring the conveying efficiency of the raw materials and improving the utilization rate of the raw materials.

[0061] In some embodiments, such as Figure 1 As shown, the vapor deposition apparatus also includes a support structure 80. The support structure 80 is used to support the deposition body. In some embodiments, the support structure 80 is disposed within the first cavity 10, and the bottom row of the plurality of through holes 111 is flush with the top surface of the support structure 80.

[0062] In some embodiments, the bottom row of through holes 111 in the array of through holes 111 is flush with the top surface of the support structure 80. The gaseous raw material in the second cavity 20 is introduced into the first cavity 10 from this position, that is, the two gaseous raw materials begin to mix here, avoiding premature mixing of gaseous raw materials and reaction that leads to uneven deposition.

[0063] In some embodiments, such as Figure 1 and Figure 2 As shown, the vapor deposition apparatus also includes a first heating element 91. The first heating element 91 is used to heat the gaseous raw material in the second input pipe 40 and the second chamber 20. The first heating element 91 can be a resistance wire, a heating tube, etc.

[0064] In some embodiments, the first heating component 91 includes a side portion and a bottom portion. The side portion is disposed around the outside of the second sidewall 120 and is used to heat the gaseous material between the second sidewall 120 and the first sidewall 110. The bottom portion is located on the bottom side of the second bottom wall 140 and is used to heat the gaseous material between the second bottom wall 140 and the first bottom wall 130. The first heating component 91 can fully preheat the gaseous material in the second input pipe 40 and the second cavity 20. That is, the first heating component 91 can heat the gaseous material in the second input pipe 40 and the second cavity 20 to any preset temperature without affecting the temperature of the gaseous material in the first input pipe 30 and the first cavity 10.

[0065] In some embodiments, the vapor deposition apparatus further includes a second heating element 92 disposed in the first cavity 10. The second heating element 92 is used to heat the gaseous raw material in the first input pipe 30 and the gas in the first cavity 10. That is, the second heating element 92 can heat the gaseous raw material in the first input pipe 30 and the gas in the first cavity 10 to any preset temperature.

[0066] In some embodiments, the second heating element 92 is also used to heat and maintain the reaction temperature required for the gas-phase reaction.

[0067] In some embodiments, when the object to be deposited 60 is hollow (e.g., hollow cylindrical), the second heating element 92 can be disposed inside the hollow part of the object to be deposited 60 to heat and maintain the reaction temperature required for the gas phase reaction.

[0068] The second heating element 92 in the example can be a resistance wire, a heating tube, etc.

[0069] By setting up a first heating element and a second heating element, the gas phase required for chemical vapor deposition can be separated, the two gaseous raw materials can be preheated and activated respectively, and then uniformly mixed and reacted on the surface of the object to be deposited, thereby improving the utilization rate of raw materials and the reaction efficiency.

[0070] In some embodiments, the first bottom wall 130 and the first side wall 110 forming the first cavity 10 are made of at least one of graphite, high thermal conductivity ceramic and metal; the second side wall 120 and the second bottom wall 140 forming the second cavity are made of at least one of graphite, high thermal conductivity ceramic and metal.

[0071] By using materials with excellent thermal conductivity and high temperature resistance, the temperature uniformity within the cavity can be improved, ensuring deposition quality. At the same time, the materials used have good chemical stability and mechanical strength, which can resist corrosion and pressure changes, extending service life.

[0072] For example, when using the vapor deposition apparatus of any of the foregoing embodiments, the reaction gas and functional gas (carrier gas, dilution gas, etc.) required for the vapor-phase chemical reaction can be separated into two sets of delivery pipelines through the first input pipe 30 and the second input pipe 40, respectively transported through the second cavity. At the same time, the reaction gas and functional gas, which are heated and fully preheated and activated by the first heating component 91 and the second heating component 92 respectively, mix and react at the through hole 111 to achieve chemical vapor deposition on the surface of the object to be deposited 60. Subsequently, the remaining carrier gas and reaction-generated gas are discharged from the output pipe 50 to complete the deposition process.

[0073] The following examples further illustrate this point.

[0074] For example, a TaC coating chemical vapor deposition is performed on the surface of an object 60 (cylinder) with a height of 300 mm and a diameter of 220 mm.

[0075] The reactants used in the chemical vapor deposition process of TaCl5 coating include TaCl5, C2H4, H2, and N2. The chemical reaction formula is as follows:

[0076] TaCl5 + H2 → Ta + HCl ①

[0077] C2H4→C+H2 ②

[0078] C+Ta→TaC ③

[0079] Using the vapor deposition apparatus of the above embodiments:

[0080] TaCl5 and N2 are introduced into the first inlet tube 30, with the TaCl5 flow rate being approximately 0.1-3 g / min and the N2 flow rate as the transport medium being approximately 100 ml / min-1000 ml / min. C2H4, H2, and N2 are introduced into the second inlet tube 40, with the C2H4 flow rate being approximately 10 ml / min-120 ml / min, the H2 flow rate being approximately 20 ml / min-500 ml / min, and the N2 flow rate being approximately 1 L / min-30 L / min.

[0081] The temperature of the first heating element 91 is set to approximately 700℃-1200℃, and the heating temperature of the second heating element 92 is set to approximately 900℃-1300℃.

[0082] Through holes 111 are evenly distributed on the side facing the workpiece to be deposited. The diameter of the output tube 50 is about 0.1mm-3mm. The center-to-center distance of the through holes 111 is about 0.5mm-5mm. The vertical distance between the through holes 111 and the surface of the object to be deposited 60 is about 2mm-20mm.

[0083] After performing vapor deposition based on the above parameters, a TaC coating was deposited on the surface of a cylindrical object 60 with a height of 300 mm and a diameter of 220 mm, achieving a deposition rate of >20 μm / h, a surface thickness deviation of <10%, and a reactant utilization rate of >70%.

[0084] The basic concepts have been described above. Obviously, for those skilled in the art, the detailed disclosure above is merely illustrative and does not constitute a limitation of this specification. Although not explicitly stated herein, those skilled in the art may make various modifications, improvements, and corrections to this specification. Such modifications, improvements, and corrections are suggested in this specification and therefore remain within the spirit and scope of the exemplary embodiments described herein.

[0085] Furthermore, this specification uses specific terms to describe embodiments thereof. For example, "an embodiment," "one embodiment," and / or "some embodiments" refer to a particular feature, structure, or characteristic associated with at least one embodiment of this specification. Therefore, it should be emphasized and noted that references to "an embodiment," "one embodiment," or "an alternative embodiment" in different locations throughout this specification do not necessarily refer to the same embodiment. Moreover, certain features, structures, or characteristics in one or more embodiments of this specification can be appropriately combined.

[0086] Finally, it should be understood that the embodiments described in this specification are merely illustrative of the principles of the embodiments described herein. Other variations may also fall within the scope of this specification. Therefore, alternative configurations of the embodiments described herein are intended to be illustrative rather than limiting, and should be considered consistent with the teachings of this specification. Accordingly, the embodiments described herein are not limited to those explicitly introduced and described herein.

Claims

1. A vapor deposition apparatus, characterized in that, include: The deposition body includes a first cavity, a second cavity, and a first sidewall; the first cavity is disposed within the second cavity and is configured to accommodate the object to be deposited; the first sidewall surrounds the first cavity and has a plurality of through holes that connect the first cavity and the second cavity; A first input tube, the first input tube being connected to the first cavity; The second input tube is connected to the second cavity; An output tube is connected to the first cavity.

2. The vapor deposition apparatus as described in claim 1, characterized in that, It also includes a cover that is detachably connected to the deposition body, the cover having a gas channel and the output pipe, the output pipe being connected to the first cavity through the gas channel.

3. The vapor deposition apparatus as described in claim 1, characterized in that, It also includes a second sidewall, a first bottom wall and a second bottom wall. The first bottom wall and the first sidewall form the first cavity. The second sidewall surrounds the outside of the first sidewall. The second bottom wall is located on the bottom side of the first bottom wall. The first sidewall, the second sidewall and the second bottom wall form an annular second cavity.

4. The vapor deposition apparatus as described in claim 3, characterized in that, The plurality of through holes are arranged in an array, wherein the columns in the array are parallel to the axial direction of the annular second cavity, and the rows in the array extend circumferentially along the annular second cavity.

5. The vapor deposition apparatus as described in claim 4, characterized in that, The first input tube and the second input tube are both located at the bottom end along the axial direction of the annular second cavity, and the output tube is located at the top end along the axial direction of the annular second cavity; It also includes a support structure disposed within the first cavity; the bottom row of the plurality of through holes is flush with the top surface of the support structure.

6. The vapor deposition apparatus as described in claim 4, characterized in that, In each column of the plurality of through holes, the opening area of ​​the through hole closer to the bottom side is smaller.

7. The vapor deposition apparatus as described in claim 3, characterized in that, The first input tube is located inside the second input tube.

8. The vapor deposition apparatus as described in claim 3, characterized in that, It also includes a first heating component, which includes a side portion and a bottom portion; the side portion is disposed around the outside of the second sidewall; and the bottom portion is located on the bottom side of the second bottom wall.

9. The vapor deposition apparatus as described in claim 3, characterized in that, It also includes a second heating element, which is disposed in the first cavity.

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