Stacked memory

Abstract

The utility model relates to the technical field of electronic memories, and discloses a stack type memory, which comprises a substrate, a connecting finger is arranged on one side of the substrate, a plurality of memory units are arranged at the top of the substrate, and the memory units are arranged in a pyramid stack shape. According to the stacked memory, the memory units are arranged at the top of the substrate in a stacked manner, so that the plurality of memory units form a pyramid stacked shape, a gap is formed between every two memory units, when the memory units are used and run, high temperature is generated and can be discharged through the gaps, and the flowability of air between the memory units is improved; the heat generated by the storage units can be discharged easily, the heat dissipation efficiency is improved, the heat radiation influence of the heat on the adjacent storage units can be reduced due to the existence of the gaps, so that the service life of the storage units is prolonged, and meanwhile, the storage units distributed in this way are also easy to disassemble, maintain or replace in the later period.

Description

TECHNICAL FIELD

[0001] The utility model relates to electronic memory technical field especially relates to a stacking type memory. BACKGROUND

[0002] Electronic memory has high density storage capacity, can read and write data fast, and has the characteristics of low power consumption, is applicable to various electronic equipment, such as smart phone, tablet computer, notebook computer and embedded system etc.

[0003] Chinese patent discloses a kind of stacked chip package structure and its memory (authorized announcement No.CN221768641U), the patent technology is made of substrate, DAF layer and first chip group, the unit chip in first chip group is stacked in ladder shape sequentially upwards, and adjacent the unit chip is offset by same distance, so that the length of welding line connected with substrate of each layer unit chip is equal, total resistance of chip after completing packaging is reduced, signal transmission performance is improved.

[0004] For the above and prior art related technology, the inventor believes that the following defects often exist: the existing stacked memory, on the basis of realizing the stacking arrangement of storage unit, the vertical arrangement type of storage unit is stacked, so that the gap between the stacked storage units is reduced, the contact amount between units and external air is reduced, so that the heat generated by the storage unit in the center area of the stack is in contact with the external air, which affects the heat dissipation effect, and is easy to cause the storage unit in the center area to overheat and overload during operation, which affects the storage speed of the unit, causes certain damage, and reduces its service life. UTILITY MODEL CONTENTS

[0005] The technical problem to be solved by the utility model is that the existing technology has the defect that heat is not beneficial to discharge in the center of the stack, therefore, a stacked memory is proposed.

[0006] In order to achieve the above purpose, the following technical scheme is adopted in the present application: a stacked memory, comprising a substrate, a connecting finger is arranged on one side of the substrate, a plurality of storage units are arranged on the top of the substrate, the arrangement of the storage units is in the shape of a pyramid stack, welding points are arranged at both ends of the storage units, a plurality of connecting lines are welded on the top of the substrate, and the other end of the connecting line is connected to the top of the welding point.

[0007] Preferably, a center unit is connected to the center area of the storage unit.

[0008] Preferably, the surface of the storage unit is coated with a passivation layer.

[0009] Preferably, a frame is fixedly connected to the top of the substrate.

[0010] Preferably, thermally conductive silicone is provided at the gap between the storage unit and the substrate, and the cross-section of the thermally conductive silicone is honeycomb-shaped.

[0011] Preferably, the two storage units are connected by flat spot welding, and the storage units and connecting lines are connected by raised spot welding.

[0012] The technical effects and advantages of this utility model are as follows:

[0013] In this invention, by stacking storage cells on the top of a substrate, multiple storage cells form a pyramid-shaped stack, creating a gap between each storage cell. When the storage cells are in use, the high temperature generated can be discharged through the gap, increasing the airflow between the storage cells and facilitating the dissipation of heat generated by the storage cells. This not only improves heat dissipation efficiency but also reduces the heat radiation impact on adjacent storage cells due to the presence of gaps, thereby extending the service life of the storage cells. At the same time, this arrangement of storage cells also makes it easier to disassemble, maintain, or replace individual storage cells in the future. Attached Figure Description

[0014] Figure 1 This is a schematic diagram of the main structure of this utility model;

[0015] Figure 2 This is a side view of the structure of this utility model;

[0016] Figure 3 This is a sectional view of the vertical cross-section of the present invention;

[0017] Figure 4 This is a schematic diagram of the central internal structure of this utility model;

[0018] Figure 5 This is a schematic diagram of the thermally conductive silicone structure of this utility model.

[0019] Legend: 1. Substrate; 2. Connecting finger; 3. Storage cell; 4. Solder joint; 5. Connecting line; 6. Central cell; 7. Frame; 8. Thermal conductive silicone. Detailed Implementation

[0020] The present invention will now be described in further detail with reference to the accompanying drawings and preferred embodiments. These drawings are simplified schematic diagrams, which only illustrate the basic structure of the present invention in a schematic manner, and therefore only show the components related to the present invention.

[0021] Reference Figure 1 - Figure 4As shown, this utility model provides a technical solution: a stacked memory, including a substrate 1, a connecting finger 2 on one side of the substrate 1, and a plurality of storage cells 3 on the top of the substrate 1. The storage cells 3 are arranged in a pyramid stacked shape, and solder points 4 are provided at both ends of the storage cells 3. A plurality of connecting lines 5 are soldered to the top of the substrate 1, and the other end of the connecting lines 5 is connected to the top of the solder points 4. By stacking the storage cells 3 on the top of the substrate 1, multiple storage cells 3 form a pyramid stacked shape, creating a gap between each storage cell 3. When the storage cells 3 are in use, the high temperature generated can be discharged through the gap, increasing the airflow between the storage cells 3 and facilitating the dissipation of heat generated by the storage cells 3. This not only improves the heat dissipation efficiency, but also reduces the heat radiation impact on adjacent storage cells 3 due to the existence of the gap, thereby extending the service life of the storage cells 3. At the same time, the storage cells 3 arranged in this way are also easy to disassemble, maintain or replace individual storage cells 3 in the future.

[0022] Reference Figure 3 and Figure 4 As shown in this embodiment: the central area of ​​the storage unit 3 is connected to the central unit 6. By setting the central unit 6 in the central area of ​​the storage unit 3, the central unit 6 is equidistant from the storage units 3 at the two edges, reducing the distance between the connecting lines, increasing the data transmission speed, and making it easier for the central unit 6 to transmit information between the various storage units 3.

[0023] Reference Figure 1 As shown in this embodiment, the surface of the storage unit 3 is coated with a passivation layer. By coating the surface of the storage unit 3 with a passivation layer, the surface of the storage unit 3 can be isolated from corrosive media such as oxygen, water, acid, alkali and so on, thereby improving its corrosion resistance, extending the service life of the storage unit 3 and reducing damage and failure caused by corrosion.

[0024] Reference Figure 2 and Figure 3 As shown in this embodiment: a frame 7 is fixedly connected to the top of the substrate 1. The frame 7 on the top of the substrate 1 can shield the top of the connecting line 5 to prevent the connecting line 5 from being damaged by impact. At the same time, the connecting line 5 is fixed to the substrate 1 by welding, which makes it easier to disassemble and install the connecting line 5.

[0025] Reference Figure 3 , Figure 4 and Figure 5As shown in this embodiment: thermally conductive silicone 8 is provided at the interval between the storage unit 3 and the substrate 1. The cross-section of the thermally conductive silicone 8 is honeycomb-shaped. Through the design, the thermally conductive silicone 8 can absorb and conduct heat generated at the bottom of the storage unit 3, thereby increasing the heat dissipation effect of the storage unit 3. At the same time, the thermally conductive silicone 8 is placed at the bottom of the storage unit 3, which also has the effect of supporting the storage unit 3 and preventing the storage unit 3 from being squeezed and broken.

[0026] Reference Figure 2 As shown in this embodiment: the two storage units 3 are connected by flat spot welding, and the storage unit 3 and the connecting line 5 are connected by raised spot welding. By using flat spot welding between the storage units 3, the contact area between the storage units 3 is increased, preventing the storage units 3 from shifting when squeezed, causing the solder joint to break, increasing the load-bearing capacity of the stacked storage units 3, and improving the compression resistance of the storage units 3. Then, by connecting the solder joint 4 to the raised spot of the connecting line 5, the welding operation is more convenient to realize the telecommunication connection between the connecting line 5 and the storage unit 3.

[0027] Working Principle: By stacking storage cells 3 on top of the substrate 1, multiple storage cells 3 form a pyramid-like stack, creating a gap between each storage cell 3. When the storage cells 3 are in use, the high temperature generated can be discharged through the gaps, increasing airflow between the storage cells 3 and facilitating heat dissipation. This not only improves heat dissipation efficiency but also reduces the heat radiation impact on adjacent storage cells 3 due to the gaps, thereby extending the lifespan of the storage cells 3. This arrangement also facilitates the disassembly, maintenance, or replacement of individual storage cells 3 later. By placing the central unit 6 in the center of the storage cells 3, the central unit 6 is equidistant from the storage cells 3 at the edges, reducing the distance between connecting lines, increasing data transmission speed, and facilitating information transmission between the central unit 6 and the storage cells 3. By coating the surface of the storage cells 3 with a passivation layer, the surface of the storage cells 3 can be isolated from corrosive media such as oxygen, water, acids, and alkalis. The design improves the corrosion resistance of the alloy, extending the service life of the storage unit 3 and reducing damage and failure caused by corrosion. The frame 7 set on the top of the substrate 1 shields the top of the connecting line 5, preventing it from being broken by impact. The connecting line 5 is fixed to the substrate 1 by welding, making it easier to disassemble and install. The thermally conductive silicone 8 absorbs and conducts heat generated at the bottom of the storage unit 3, increasing the heat dissipation effect of the storage unit 3. The thermally conductive silicone 8 is placed at the bottom of the storage unit 3, providing support and preventing it from being squeezed and split. The flat spot welding between the storage units 3 increases the contact area between them, preventing the storage units 3 from shifting when squeezed, thus preventing the solder joints from breaking. This increases the load-bearing capacity of the stacked storage units 3 and enhances their compression resistance. The connection between the welding point 4 and the protrusion of the connecting line 5 facilitates the welding operation and realizes the telecommunication connection between the connecting line 5 and the storage unit 3.

[0028] Finally, it should be noted that the above description is only a preferred embodiment of the present utility model and is not intended to limit the present utility model. Although the present utility model has been described in detail with reference to the foregoing embodiments, those skilled in the art can still modify the technical solutions described in the foregoing embodiments or make equivalent substitutions for some of the technical features. Any modifications, equivalent substitutions, improvements, etc., made within the spirit and principles of the present utility model should be included within the protection scope of the present utility model.

Claims

1. A stacked memory, comprising a substrate (1), characterized in that: A connecting finger (2) is provided on one side of the substrate (1), and a plurality of storage units (3) are provided on the top of the substrate (1). The storage units (3) are arranged in a pyramid stacked shape. A soldering point (4) is provided at both ends of the storage unit (3). A plurality of connecting lines (5) are soldered to the top of the substrate (1). The other end of the connecting line (5) is connected to the top of the soldering point (4). A central unit (6) is connected to the central area of ​​the storage unit (3). A frame (7) is fixedly connected to the top of the substrate (1). Thermally conductive silicone (8) is provided at the interval between the storage unit (3) and the substrate (1). The cross-section of the thermally conductive silicone (8) is honeycomb.

2. The stacked memory according to claim 1, characterized in that: The surface of the storage unit (3) is coated with a passivation layer.

3. A stacked memory according to claim 1, characterized in that: The two storage units (3) are welded together using flat spot welding, and the storage unit (3) and the connecting line (5) are welded together using raised spot welding.

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