Plasma atomic layer deposition equipment

Abstract

The utility model belongs to the technical field of atomic layer deposition, and relates to plasma atomic layer deposition equipment, which comprises a reaction gas input component, a gas inlet component and a gas outlet component, the reaction reagent input assembly is used for inputting a reaction reagent; the plasma gas generation assembly is used for generating plasma gas by utilizing the reaction gas; the plasma gas generation assembly is connected with the reaction gas input assembly; the reaction assembly is used for providing a reaction space; the reaction assembly is respectively connected with the reaction reagent input assembly and the plasma gas generation assembly; the extraction assembly is used for extracting impurities in the reaction assembly; the extraction assembly is connected with the reaction assembly. Thin film deposition can be carried out at a low temperature, the influence of high temperature on the performance of the substrate can be avoided, deformation or performance degradation of the substrate can be prevented, the generated thin film has better uniformity and compactness and lower impurity content, defects in the thin film are reduced, and therefore the quality and performance of the thin film are improved.

Description

TECHNICAL FIELD

[0001] The utility model relates to atomic layer deposition technical field especially, it relates to a kind of plasma atomic layer deposition equipment. BACKGROUND

[0002] Atomic layer deposition (ALD) is also called atomic layer epitaxy (ALE) or atomic layer chemical vapor deposition (ALCVD). Atomic layer deposition was first proposed by Finnish scientists in 1974, has the advantages of single atomic layer deposition, deposition layer thickness is extremely uniform, three-dimensional conformality is high, and has become the key link of advanced semiconductor process technology development.

[0003] In atomic layer deposition process, the chemical reaction of new atomic layer is directly associated with the previous layer. Atomic layer deposition is by alternately passing two or more gas phase precursors into the reactor, and carrying out chemical adsorption reaction on the surface of deposition substrate to form deposition film, and using chemical bond to alternately adsorb A and B two kinds of substances to realize surface reaction growth. Atomic layer deposition has self-limiting characteristics, that is, in each pulse cycle, gas phase precursor can only react on the atomic bonding site of deposition substrate surface, and just covers the substrate surface with saturated amount, which can repeat growth atom by atom in very wide process window.

[0004] At present, ordinary thermal ALD equipment needs relatively high preparation temperature (above 350 DEG C) when preparing some metals, sulfides and nitrides, which will lead to the increase of energy consumption of the equipment, the reduction of the service life of high-temperature O ring, and the problems of substrate deformation and performance degradation of some temperature-sensitive substrate materials. UTILITY MODEL CONTENT

[0005] Therefore, the utility model provides a kind of plasma atomic layer deposition equipment.

[0006] Specifically, the utility model is realized by the following technical solutions:

[0007] According to the first aspect of the utility model, a kind of plasma atomic layer deposition equipment is provided, comprising:

[0008] Reaction gas input component, for inputting reaction gas;

[0009] Reaction reagent input component, for inputting reaction reagent;

[0010] Plasma gas generation component, for generating plasma gas using the reaction gas;The plasma gas generation component is connected with the reaction gas input component;

[0011] a reaction assembly for providing a reaction space; the reaction assembly is connected with the reaction reagent input assembly and the plasma gas generation assembly respectively;

[0012] a pumping assembly for pumping impurities in the reaction assembly; the pumping assembly is connected with the reaction assembly.

[0013] Optionally, the reaction gas input assembly comprises a first pipeline, and an outlet of the first pipeline is connected with the plasma gas generation assembly.

[0014] Optionally, the reaction gas input assembly further comprises a first regulating valve arranged on the first pipeline.

[0015] Optionally, the reaction reagent input assembly comprises a precursor source bottle and a second pipeline, wherein an outlet of the precursor source bottle is connected with the second pipeline, and an outlet of the second pipeline is connected with the reaction assembly.

[0016] Optionally, the reaction reagent input assembly further comprises a second regulating valve arranged on the second pipeline.

[0017] Optionally, the plasma gas generation assembly comprises a plasma generator, a radio frequency generator and a radio frequency coil, wherein two ends of the plasma generator are connected with the outlet of the first pipeline in the reaction gas input assembly and the reaction assembly respectively, the radio frequency coil is wound around an outer wall of the plasma generator, and the radio frequency generator is connected with the radio frequency coil.

[0018] Optionally, the reaction assembly comprises a reaction chamber, and the reaction chamber is connected with the outlet of the second pipeline in the reaction reagent input assembly and the plasma generator in the plasma gas generation assembly respectively.

[0019] Optionally, the reaction assembly further comprises a heating disc arranged on an inner wall at a bottom end of the reaction chamber.

[0020] Optionally, the pumping assembly comprises a pumping pump connected with the reaction chamber in the reaction assembly.

[0021] Optionally, the pumping assembly further comprises a switch valve arranged on a connecting pipeline between the pumping pump and the reaction chamber.

[0022] The technical scheme provided by the utility model brings at least the following beneficial effects:

[0023] The plasma atomic layer deposition device provided by the application can deposit a thin film at a low temperature, can avoid the influence of high temperature on the performance of a substrate, can prevent the deformation or performance degradation of the substrate, the high activity substance in the plasma can make the precursors more fully react, the generated thin film has better uniformity, density and lower impurity content, reduces defects in the thin film, thereby improving the quality and performance of the thin film, and is suitable for high-end applications with high requirements on the quality of the thin film, such as the manufacturing of advanced semiconductor devices, can realize the preparation of some materials that are difficult to be deposited by thermal ALD, such as some metals, low-temperature oxides, nitrides, sulfides and fluorides, expands the range of depositable materials, meets the needs of different fields for various material thin films, and the plasma can accelerate the chemical reaction, shorten the deposition period, improve the efficiency of thin film deposition, help to improve the production capacity and reduce the production cost in large-scale production. BRIEF DESCRIPTION OF DRAWINGS

[0024] The drawings incorporated into the specification and constituting a part of the specification show embodiments consistent with the present application and, together with the specification, serve to explain the principles of the present application.

[0025] In order to more clearly illustrate the technical solutions in the embodiments of the present application or the prior art, the drawings needed to be used in the embodiments or related technical descriptions will be briefly introduced as follows, and obviously, other drawings can also be obtained by those skilled in the art without creative labor on the basis of these drawings.

[0026] Figure 1 A structure schematic diagram of the plasma atomic layer deposition device provided by the embodiments of the present application is shown. DETAILED DESCRIPTION

[0027] In order to make the purpose, technical scheme and advantages of the embodiments of the present application more clear, the technical scheme in the embodiments of the present application will be clearly and completely described in the following with reference to the drawings in the embodiments of the present application. Obviously, the described embodiments are a part of the embodiments of the present application, rather than all the embodiments of the present application. Based on the embodiments in the present application, all other embodiments obtained by those skilled in the art without creative labor are within the scope of protection of the present application.

[0028] Figure 1 A plasma atomic layer deposition device suitable for the embodiments of the present application is schematically shown.

[0029] REFERENCE Figure 1 As shown in the figure, the application provides a plasma atomic layer deposition device, which comprises:

[0030] A reaction gas input assembly 10 is used for inputting reaction gas;

[0031] A reaction reagent input component 20 for inputting reaction reagents;

[0032] A plasma gas generating component 30 for generating plasma gas using the reaction gas; the plasma gas generating component 30 is connected with the reaction gas input component 10;

[0033] A reaction component 40 for providing a reaction space; the reaction component 40 is connected with the reaction reagent input component 20 and the plasma gas generating component 30 respectively;

[0034] An extraction component 50 for extracting impurities in the reaction component 40; the extraction component 50 is connected with the reaction component 40.

[0035] In the embodiments of the present application, the sample to be coated is placed in the reaction component 40, the reaction gas is input into the plasma gas generating component 30 through the reaction gas input component 10, the plasma gas generating component 30 generates plasma gas using the reaction gas, the reaction reagent is input into the reaction component 40 through the reaction reagent input component 20, the reaction reagent, the plasma gas and the sample react in the reaction component 40, and the extraction component 50 can extract the impurities (such as unreacted gas) in the reaction component 40 out of the reaction component 40. The following is a detailed analysis of the plasma atomic layer deposition equipment involved in the embodiments of the present application:

[0036] Reaction gas input component: for inputting gases participating in the reaction into the equipment. These gases are activated in the plasma gas generating component to form plasma gas.

[0037] Reaction reagent input component: for inputting reaction reagents, which chemically react with plasma gas in the reaction component to form the required thin film.

[0038] Plasma gas generating component: generates plasma gas using reaction gas. Plasma gas has higher reactivity and can promote chemical reactions at lower temperatures. Connection: connected with the reaction gas input component, receives reaction gas and performs ionization treatment.

[0039] Reaction component: provides a reaction space, which is the main place for thin film deposition. In the reaction component, reaction reagents chemically react with plasma gas to form a thin film. Connection: connected with the reaction reagent input component and the plasma gas generating component respectively, receives reaction reagents and plasma gas.

[0040] Extraction component: for extracting impurities in the reaction component, such as unreacted reaction reagents, reaction byproducts, etc. This helps to keep the reaction space clean and improve the quality of the thin film. Connection: connected with the reaction component to extract impurities from the reaction space.

[0041] Low-temperature deposition: The device can perform thin film deposition at a lower temperature, avoiding the influence of high temperature on the performance of the substrate, preventing deformation or performance degradation of the substrate. Thin film quality: The generated thin film has better uniformity and density, lower impurity content and fewer defects. This is due to the high reactivity of the plasma gas and the effective removal of impurities by the extraction assembly. Performance improvement: By optimizing the reaction conditions and reducing the impurity content, the device can significantly improve the quality and performance of the thin film to meet the needs of various application scenarios.

[0042] The device can be widely used in fields that require high-quality thin films, such as microelectronics, optoelectronics, biomedicine, energy, etc. In particular, in applications where the substrate temperature is sensitive or the thin film is required to have excellent performance, the device has significant advantages.

[0043] In summary, the plasma atomic layer deposition device in the embodiments of the present application realizes high-quality thin film deposition at a lower temperature by introducing a plasma gas generation assembly and an extraction assembly. The device has a wide application prospect and significant technical advantages, providing a new solution for the thin film preparation field.

[0044] Exemplarily, the reaction gas input assembly 10 includes a first pipeline 11, and an outlet of the first pipeline 11 is connected to the plasma gas generation assembly 30.

[0045] In the embodiments of the present application, the reaction gas is input into the plasma gas generation assembly 30 through the first pipeline 11.

[0046] Exemplarily, the reaction gas input assembly 10 further includes a first regulating valve 12, and the first regulating valve 12 is arranged on the first pipeline 11.

[0047] In the embodiments of the present application, the first regulating valve 12 is used to adjust the flow size of the gas input in the first pipeline 11.

[0048] Exemplarily, the reaction reagent input assembly 20 includes a precursor source bottle 21 and a second pipeline 22, wherein an outlet of the precursor source bottle 21 is connected to the second pipeline 22, and an outlet of the second pipeline 22 is connected to the reaction assembly 40.

[0049] In the embodiments of the present application, the second pipeline 22 accesses chlorine gas from the outside world, the precursor source bottle 21 contains a reaction reagent, and the reaction reagent is carried into the reaction assembly 40 by the chlorine gas.

[0050] Exemplarily, the reaction reagent input assembly 20 further includes a second regulating valve 23, and the second regulating valve 23 is arranged on the second pipeline 22.

[0051] In the embodiment of the present application, the second adjusting valve 23 is used to adjust the flow of the input gas with the reaction reagent in the second pipe 22.

[0052] Exemplarily, the plasma gas generating assembly 30 comprises a plasma generator 31, a radio frequency generator 32 and a radio frequency coil 33, wherein two ends of the plasma generator 31 are connected with the gas outlet of the first pipe 11 in the reaction gas input assembly 10 and the reaction assembly 40 respectively, the radio frequency coil 33 is wound around the outer wall of the plasma generator 31, and the radio frequency generator 32 is connected with the radio frequency coil 33.

[0053] In the embodiment of the present application, the radio frequency generator 32 generates an electric current, the electric current generates an electric field around the plasma generator 31 via the radio frequency coil 33, and the electric field acts on the input gas in the first pipe 11, so as to generate the plasma gas.

[0054] Exemplarily, the reaction assembly 40 comprises a reaction chamber 41, and the reaction chamber 41 is connected with the gas outlet of the second pipe 22 in the reaction reagent input assembly 20 and the plasma generator 31 in the plasma gas generating assembly 30 respectively.

[0055] In the embodiment of the present application, the reaction chamber 41 is used for the reaction of the plasma gas and the reaction reagent.

[0056] Exemplarily, the reaction assembly 40 further comprises a heating disc 42, and the heating disc 42 is arranged on the inner wall of the bottom end of the reaction chamber 41.

[0057] In the embodiment of the present application, the heating disc 42 is used to carry and heat the sample.

[0058] Exemplarily, the extraction assembly 50 comprises an air pump 51, and the air pump 51 is connected with the reaction chamber 41 in the reaction assembly 40.

[0059] In the embodiment of the present application, the air pump 51 is used to extract the unreacted gas and impurities in the reaction chamber 41.

[0060] Exemplarily, the extraction assembly 50 further comprises a switch valve 52, and the switch valve 52 is arranged on the connecting pipe between the air pump 51 and the reaction chamber 41.

[0061] In the embodiment of the present application, the switch valve 52 is used to open or disconnect the connecting pipe between the air pump 51 and the reaction chamber 41.

[0062] In the embodiment of the present application, the sample to be coated is placed above the heating plate 42, and the heating plate 42 is set to a corresponding experimental temperature by program control. The inside of the reaction chamber 41 also has auxiliary heating wires in the cavity, and the heating temperature is also controlled by program control. Before the experiment, the reaction reagents to be involved are loaded into the precursor source bottle 21, and the flow rate of the inert gas through the second pipeline 22 is controlled by controlling the flow rate of the second regulating valve 23, so as to bring the reaction reagents into the reaction chamber 41. Similarly, the gas required for the reaction enters the plasma generator 31 through the first pipeline 11, and the size of the flow rate is controlled by the second regulating valve 23. When the gas passes through the radio frequency coil 33 of the plasma generator 31, the gas is ionized into a plasma state due to the alternating electric field. At this time, the plasma gas and the reaction reagents that have been introduced into the reaction chamber 41 react on the film surface to form a layer of film, and the excess precursor source and by-products are pumped out of the cavity by the air pump 51 through the hole below the reaction chamber 41. The shell and pipeline of the plasma generation area are made of stainless steel material, and the radio frequency coil 33 is made of metal material such as copper or aluminum. The on-off valve 52 is a front-stage valve of the air pump 51, and the reaction chamber 41 can start to be pumped only when the on-off valve 52 is opened by program control after the air pump 51 starts to operate. The first pipeline 11, the second pipeline 22 and the cavity outside the plasma generator 31 are wrapped with heating belts, and the temperature is also controlled by program control to prevent the precursor source from condensing in the pipeline. The radio frequency coil 33 is connected to the radio frequency generator 32, and the input power can be adjusted on the radio frequency generator 32 to control the intensity of the radio frequency signal and the size of the energy.

[0063] The following is a further analysis and supplement of the plasma atomic layer deposition equipment involved in the embodiment of the present application:

[0064] 1. Plasma atomic layer deposition equipment structure

[0065] Reaction gas input assembly 10

[0066] First pipeline 11: used for conveying reaction gas to plasma gas generation assembly 30. The gas outlet thereof is connected with the plasma gas generation assembly 30. First regulating valve 12: provided on the first pipeline 11, used for accurately adjusting the flow rate of the reaction gas, and ensuring the stability of the plasma gas generation process.

[0067] Reaction reagent input assembly 20

[0068] Precursor source bottle 21: used to store the reaction reagent. The reaction reagent is carried by inert gas (such as chlorine) into the reaction assembly 40 through the second pipeline 22. Second pipeline 22: connecting the precursor source bottle 21 and the reaction assembly 40, used to transport inert gas with reaction reagent. Second regulating valve 23: set on the second pipeline 22, used to adjust the flow of inert gas with reaction reagent, to ensure uniform distribution of reaction reagent in the reaction assembly 40.

[0069] Plasma gas generation assembly 30

[0070] Plasma generator 31: is the core component of plasma gas generation. Its two ends are connected with the reaction gas input assembly 10 and the reaction assembly 40 respectively, to ensure that the reaction gas is ionized into plasma gas in the plasma generator 31. Radio frequency generator 32: generates alternating current, and generates electric field around the plasma generator 31 through the radio frequency coil 33, so as to ionize the reaction gas. Radio frequency coil 33: winding on the outer wall of the plasma generator 31, connected with the radio frequency generator 32, used to generate the electric field required for ionization.

[0071] Reaction assembly 40

[0072] Reaction chamber 41: is the main place of thin film deposition. Its internal space is used for chemical reaction of plasma gas and reaction reagent to generate the required thin film. The reaction chamber 41 is connected with the reaction reagent input assembly 20 and the plasma gas generation assembly 30 respectively. Heating disc 42: set on the inner wall of the bottom end of the reaction chamber 41, used to carry the sample and heat the sample to promote the progress of chemical reaction.

[0073] Extraction assembly 50

[0074] Exhaust pump 51: connected with the reaction chamber 41 of the reaction assembly 40, used to extract unreacted gas and impurities, and keep the reaction chamber clean. Switch valve 52: set on the connecting pipeline between the exhaust pump 51 and the reaction chamber 41, used to control the start and end of the extraction process.

[0075] 2、Working principle and operation process

[0076] The sample to be coated is placed above the heating plate 42, and the heating temperature of the heating plate 42 and the reaction chamber 41 is set by programming. The reaction reagent is loaded into the precursor source bottle 21, and the flow of inert gas is adjusted by the second regulating valve 23 to bring the reaction reagent into the reaction chamber 41. At the same time, the reaction gas enters the plasma generator 31 through the first pipe 11 and the first regulating valve 12. The radio frequency generator 32 generates an alternating current to generate an electric field around the plasma generator 31 through the radio frequency coil 33, ionizing the reaction gas to generate plasma gas. The plasma gas and the reaction reagent chemically react in the reaction chamber 41 to generate the required thin film. The excess precursor source and by-products are pumped out of the chamber by the suction pump 51 through the hole below the reaction chamber 41. The opening and closing of the switch valve 52 are controlled by programming to control the progress of the suction process.

[0077] 3. Device features and advantages

[0078] Low-temperature deposition: The high reactivity of the plasma gas enables thin film deposition at lower temperatures. Thin film quality: The generated thin film has excellent uniformity, density, and low impurity content. Flexibility: By adjusting the flow of reaction gas and reaction reagent, as well as the heating temperature and the intensity of the radio frequency signal, the deposition rate and properties of the thin film can be precisely controlled. High efficiency: The compact structure of the device and the simple operation process improve the efficiency and reliability of thin film deposition.

[0079] In summary, the plasma atomic layer deposition device in the embodiments of the present application has significant technical advantages and wide application prospects, providing a new solution for the preparation of high-quality thin films. The plasma atomic layer deposition device provided in the present application can perform thin film deposition at a lower temperature, avoiding the influence of high temperature on the performance of the substrate and preventing the deformation or performance degradation of the substrate; the high activity substances in the plasma can make the precursors react more fully, and the generated thin film has better uniformity, density, and lower impurity content, reducing defects in the thin film and thus improving the quality and performance of the thin film, suitable for high-end applications with strict requirements on thin film quality, such as the manufacture of advanced semiconductor devices; it can realize the preparation of some materials that are difficult to deposit by thermal ALD, such as certain metals, low-temperature oxides, nitrides, sulfides, and fluorides, expanding the range of depositable materials and meeting the needs of different fields for various material thin films; and the plasma can accelerate the chemical reaction, shorten the deposition period, improve the efficiency of thin film deposition, help to improve productivity and reduce production costs in large-scale production.

[0080] It should be noted that in the present application, the terms "upper", "lower", "left", "right", "front", "back", "top", "bottom", "inner", "outer", "vertical", "horizontal", "lateral", "longitudinal" and the like indicate the orientation or positional relationship based on the orientation or positional relationship shown in the drawings. These terms are mainly used to better describe the present application and its embodiments, and are not intended to limit the indicated devices, elements or components to have a specific orientation, or to be constructed and operated in a specific orientation.

[0081] In addition, in addition to indicating the orientation or positional relationship, the above-mentioned partial terms can also be used to indicate other meanings, for example, the term "upper" can also be used to indicate a certain dependent relationship or connection relationship in some cases. For those skilled in the art, the specific meaning of these terms in the present application can be understood according to the specific circumstances.

[0082] In addition, the terms "mounting", "setting", "provided with", "connection", "connected" should be broadly understood. For example, it can be fixedly connected, detachably connected, or integrally constructed; it can be mechanically connected, or electrically connected; it can be directly connected, or indirectly connected through an intermediate medium, or it can be internal communication between two devices, elements or components. For those skilled in the art, the specific meaning of the above-mentioned terms in the present application can be understood according to the specific circumstances.

[0083] In addition, the terms "first", "second" and the like are mainly used to distinguish different devices, elements or components (the specific types and structures can be the same or different), and are not intended to indicate or imply the relative importance and quantity of the indicated devices, elements or components. Unless otherwise stated, the meaning of "multiple" is two or more.

[0084] The above is only a specific embodiment of the present application, which enables those skilled in the art to understand or implement the present application. Various modifications to these embodiments will be apparent to those skilled in the art, and the general principles defined herein can be implemented in other embodiments without departing from the spirit or scope of the present application. Therefore, the present application should not be limited to the embodiments shown herein, but should be consistent with the widest scope of the principles and novel features claimed herein.

Claims

1. A plasma atomic layer deposition apparatus, characterized by, The application relates to a reaction gas input assembly for inputting reaction gas, a reaction reagent input assembly for inputting reaction reagent, a plasma gas generating assembly for generating plasma gas by using the reaction gas, the plasma gas generating assembly being connected with the reaction gas input assembly, a reaction assembly for providing a reaction space, the reaction assembly being connected with the reaction reagent input assembly and the plasma gas generating assembly respectively, and an extraction assembly for extracting impurities in the reaction assembly, the extraction assembly being connected with the reaction assembly. The reaction gas input assembly comprises a first pipeline, and an outlet of the first pipeline is connected with the plasma gas generating assembly. The reaction gas input assembly further comprises a first adjusting valve arranged on the first pipeline. The reaction reagent input assembly comprises a precursor source bottle and a second pipeline, wherein an outlet of the precursor source bottle is connected with the second pipeline, and an outlet of the second pipeline is connected with the reaction assembly. The reaction reagent input assembly further comprises a second adjusting valve arranged on the second pipeline. The plasma gas generating assembly comprises a plasma generator, an RF generator and an RF coil, wherein two ends of the plasma generator are respectively connected with the outlet of the first pipeline in the reaction gas input assembly and the reaction assembly, the RF coil is wound around an outer wall of the plasma generator, and the RF generator is connected with the RF coil.

2. The plasma atomic layer deposition apparatus of claim 1, wherein, The reaction assembly comprises a reaction chamber, and the reaction chamber is respectively connected with the outlet of the second pipeline in the reaction reagent input assembly and the plasma generator in the plasma gas generating assembly.

3. The plasma atomic layer deposition apparatus according to claim 2, characterized by The reaction assembly further comprises a heating disc arranged on an inner wall at a bottom end of the reaction chamber.

4. The plasma atomic layer deposition apparatus of claim 1, wherein, The extraction assembly comprises an air extraction pump connected with the reaction chamber in the reaction assembly.

5. The plasma atomic layer deposition apparatus according to claim 4, characterized by The extraction assembly further comprises a switch valve arranged on a connecting pipeline between the air extraction pump and the reaction chamber.

6. The plasma atomic layer deposition apparatus of claim 1, wherein, ​ 7. The plasma atomic layer deposition apparatus of claim 1, wherein, ​ 8. The plasma atomic layer deposition apparatus according to claim 7, characterized by ​ 9. The plasma atomic layer deposition apparatus of claim 1, wherein, ​ 10. The plasma atomic layer deposition apparatus of claim 9, wherein, ​

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