Vapor deposition equipment

Abstract

The utility model provides vapor deposition equipment, a gas inlet device of the vapor deposition equipment comprises a process gas inlet device and a purging gas inlet device, and the process gas inlet device at least comprises two sub-process gas inlet devices, so that laminar process gas is provided for different areas of the surface of a substrate, more uniform source gas density is provided, and uniform growth of epitaxy is facilitated; the purging gas inlet device at least comprises two sub-purging gas inlet devices so as to provide at least two paths of purging gas for the space between the laminar flow process gas and the top wall of the process chamber, the purging gas isolates a top plate of the process chamber from a substrate or source gas, and the source gas is limited in the space close to the surface of the substrate as much as possible. According to the technical scheme, the source gas is prevented from diffusing upwards to the top wall of the process chamber, multiple paths of purging gas flows are arranged to improve the isolation effect of the purging gas, the isolation effect is provided in different areas or directions, and the uniform reaction gas flow and the substrate film with good quality can be obtained.

Description

Technical Field

[0001] This application relates to the field of semiconductor equipment technology, and in particular to a vapor deposition apparatus. Background Technology

[0002] Chemical vapor deposition (CVD) is an important vapor phase epitaxial growth technique that mainly utilizes one or more vapor phase compounds or elements containing thin film elements to chemically react on the substrate surface to generate thin films.

[0003] In vapor deposition equipment, especially for horizontal flow vapor deposition equipment, the source gas enters from one side wall of the reaction chamber and flows through the substrate area in a laminar flow manner, where it undergoes a vapor-phase growth reaction with the substrate surface. Typically, in horizontal flow vapor deposition equipment, the height of the reaction chamber is relatively low, and the distance between the substrate surface and the top wall of the reaction chamber is short. After entering the reaction chamber, the source gas easily diffuses to the top wall of the reaction chamber. Especially for vapor deposition equipment with hot wall heating, the temperature gradient inside the reaction chamber is small in the height direction. While the source gas is depositing and growing epitaxial layers on the substrate surface, it also reacts at the top wall to produce a deposition layer. This further exacerbates the non-uniformity of gas flow distribution in the reaction chamber and seriously affects the thickness uniformity of the epitaxial layer deposited on the substrate surface. Utility Model Content

[0004] In view of the above-mentioned defects in the existing vapor deposition equipment, this application provides a vapor deposition equipment to solve one or more of the above problems.

[0005] To achieve the above objectives, this application provides a vapor deposition apparatus, comprising:

[0006] The process chamber is equipped with a base for supporting the substrate;

[0007] An air intake device is disposed on the outer wall of the process chamber, and the air intake device includes a process air intake device and a purging air intake device; wherein,

[0008] The process gas inlet device includes at least two sub-process gas inlet devices, each of which is connected to the process chamber to provide laminar process gas to different areas of the substrate surface.

[0009] The purge gas inlet device includes at least two sub-purge gas inlet devices, each of which is located above the sub-process gas inlet device and is connected to the process chamber to provide at least two purge gas streams to the space between the laminar process gas and the top wall of the process chamber.

[0010] The beneficial effects of the vapor deposition equipment provided in this application are as follows: By configuring the gas inlet device as a process gas inlet device and a purge gas inlet device, the process gas inlet device includes at least two sub-process gas inlets to provide laminar process gas to different areas of the substrate surface, providing suitable source gas for epitaxial growth; the purge gas inlet device includes at least two sub-purge gas inlets to provide at least two purge gas paths to the space between the laminar process gas and the top wall of the process chamber. The airflow provided by the purge gas inlet device can isolate the top plate of the process chamber from the substrate or source gas, confining the source gas as close as possible to the space near the substrate surface, improving the utilization rate of the source gas, and preventing the source gas from diffusing upward to the top wall of the process chamber, thus preventing the formation of a poor deposition layer. In addition, the multi-path process gas inlet device can provide a more uniform source gas density to the substrate, which is beneficial to the uniform growth of epitaxy; the multi-path purge gas inlet device can improve the isolation effect of the purge gas, providing isolation in different areas or directions, preventing the source gas from escaping upward, thereby improving the utilization rate of the source gas.

[0011] Optionally, along the axial direction of the process chamber, each of the sub-process air inlet devices is respectively configured in correspondence with each of the sub-purge air inlet devices.

[0012] Optionally, each of the sub-process air intake devices and / or each of the sub-purge air intake devices is arranged radially along the process chamber.

[0013] Optionally, the air intake device includes an air intake body and a first isolation device; the first isolation device is horizontally sealed inside the air intake body and abuts against the inner wall of the air intake body; the first isolation device penetrates the air intake body radially to form a process air intake device and a purging air intake device respectively.

[0014] Optionally, the air intake device further includes several height-adjustable second isolation devices, which are disposed inside the air intake body and respectively abut against the inner wall of the air intake body and the first isolation device to form at least two sub-process air intake devices and at least two sub-purge air intake devices.

[0015] Optionally, the top surface of the base is provided with a recess for supporting the substrate, and the interior is provided with a base air passage communicating with the recess;

[0016] The air intake device further includes a drive air intake device that extends from the air intake device into the interior of the base and communicates with the air passage of the base to provide drive gas for driving the substrate to rotate.

[0017] Optionally, the driving air intake device includes a driving air channel and a driving air pipe seat, wherein the two ends of the driving air channel are respectively connected to the driving air intake end and the base air channel.

[0018] Optionally, it also includes a support device disposed inside the air intake device, the support device being used to support at least one of the sub-process air intake device, the sub-purge air intake device, and the drive air intake device.

[0019] Optionally, it also includes a main control unit, a growth monitoring unit, and a gas distribution unit; wherein,

[0020] The growth monitoring device is disposed in the process chamber to obtain growth information of the semiconductor material layer on the substrate surface;

[0021] The gas distribution device is connected to each of the sub-process gas inlet devices and each of the sub-purge gas inlet devices;

[0022] The main control device is communicatively connected to the gas distribution device and the growth monitoring device to obtain growth information, and controls the gas intake of each sub-process gas intake device and each sub-purge gas intake device by controlling the gas distribution device according to the growth information.

[0023] Optionally, it also includes a pressure detection device and a pressure control device; wherein,

[0024] The main control device is also communicatively connected to the pressure detection device and the pressure control device to obtain and, based on growth information and pressure information, control the gas distribution device to control the gas intake of each of the sub-process gas intake devices and each of the sub-purge gas intake devices. Attached Figure Description

[0025] Figure 1 This is a schematic diagram of the source gas flow direction in a conventional horizontal flow vapor deposition device.

[0026] Figure 2 A schematic cross-sectional view of the vapor deposition apparatus provided in this application;

[0027] Figure 3 This is a schematic diagram of a radial cross-sectional structure of the air intake device provided in Embodiment 1 of this application;

[0028] Figure 4 This is a top view cross-sectional structural diagram of the air intake device provided in Embodiment 1 of this application;

[0029] Figure 5 This is a schematic diagram of a radial cross-sectional structure of the air intake device provided in Embodiment 2 of this application;

[0030] Figure 6 This is a top view cross-sectional structural diagram of the air intake device provided in Embodiment 2 of this application;

[0031] Figure 7 This is a top view cross-sectional structural diagram of the air intake device provided in Embodiment 3 of this application.

[0032] Explanation of reference numerals in the attached figures:

[0033] 1. Upstream sealing device

[0034] 11 Gas distribution device

[0035] 2. Air intake device

[0036] 200 intake unit

[0037] 201 First Isolation Device

[0038] 202 Second Isolation Device

[0039] 21. Purge gas passage

[0040] 211 First purge air path

[0041] 212 Second purge air path

[0042] 213 Third purge air path

[0043] 22 Process gas passage

[0044] 221 First Process Gas Path

[0045] 222 Second Process Gas Path

[0046] 223 Third process gas path

[0047] 23 Driving air passage

[0048] 3. Process Equipment

[0049] 31 Process Chamber

[0050] 32. Depression

[0051] 33. Base airway

[0052] 4. Exhaust device

[0053] 41 Exhaust passage

[0054] 5. Downstream sealing device

[0055] 6. Growth monitoring device

[0056] 7. Pressure detection device

[0057] 8. Main control unit Detailed Implementation

[0058] Figure 1The diagram illustrates the gas flow direction of a horizontal flow vapor deposition apparatus. The source gas enters from one side wall of the reaction chamber, flows laminarly through the substrate area, and undergoes a vapor-phase growth reaction on the substrate surface. However, due to the short distance between the substrate surface and the top wall of the reaction chamber, the source gas easily diffuses to the top wall after entering the chamber, resulting in a poorly deposited layer. When the deposition reaches a certain thickness, there is a risk of the top deposited layer falling off, affecting the quality of the film deposited on the substrate. To improve or solve the prior art and the aforementioned technical problems, this application provides a vapor deposition apparatus.

[0059] The following specific embodiments illustrate the implementation of this application. Those skilled in the art can easily understand other advantages and effects of this application from the content disclosed in this specification. This application can also be implemented or applied through other different specific embodiments, and various details in this specification can also be modified or changed based on different viewpoints and applications without departing from the spirit of this application. It should be noted that, unless otherwise specified, the following embodiments and features in the embodiments can be combined with each other.

[0060] It should be noted that the illustrations provided in the embodiments of this application are merely schematic representations of the basic concept of this application. Although the illustrations only show components relevant to this application and are not drawn according to the actual number, shape, and size of components in implementation, the shape, quantity, and proportion of each component can be arbitrarily changed in actual implementation, and the layout of the components may also be more complex. The structures, proportions, sizes, etc., shown in the accompanying drawings are only used to complement the content disclosed in the specification for those skilled in the art to understand and read, and are not intended to limit the implementation conditions of this application. Therefore, they have no substantial technical significance. Any modifications to the structure, changes in the proportional relationships, or adjustments to the size, without affecting the effects and purposes that this application can produce, should still fall within the scope of the technical content disclosed in this application. The technical solution of this application will be described in detail below with reference to Embodiments 1 to 3 and the accompanying drawings.

[0061] Example 1:

[0062] See Figures 2 to 4 This embodiment provides a vapor deposition apparatus.

[0063] The vapor deposition apparatus includes a process unit 3, which contains a process chamber 31. A base for supporting a substrate is disposed within the process chamber 31, and a recess 32 for supporting the substrate is provided on the top surface of the base. The substrate is placed in the recess 32 to define its process position. An air inlet device 2 is installed on one outer wall of the process unit 3, including a purge air inlet device and a process air inlet device arranged sequentially from top to bottom. These provide purge airflow and process airflow to the process chamber 31, respectively. The process airflow is a laminar source gas close to the substrate surface, while the purge airflow is a gas located between the process airflow and the top wall of the process chamber 31. The purge airflow layer isolates the process airflow from the top wall of the process chamber 31, confining the source gas as close as possible to the space near the substrate surface, improving the utilization rate of the source gas, and preventing the source gas from diffusing upwards to the top wall of the process chamber 31 and generating a defective deposition layer. An exhaust device 4 is installed on the other outer wall of the process unit 3. The exhaust device 4 is arranged opposite to the air inlet device 2. The exhaust device 4 has an exhaust channel 41 that communicates with the process chamber 31 to discharge the by-products after the vapor deposition reaction to the outside of the system.

[0064] The inlet device 2 specifically includes a process inlet device and a purge inlet device. The process inlet device includes at least two sub-process inlet devices, each connected to the process chamber 31 to provide laminar process gas to different areas of the substrate surface. The purge inlet device includes at least two sub-purge inlet devices, each located above the sub-process inlet device and connected to the process chamber 31 to provide at least two purge gas paths to the space between the laminar process gas and the top wall of the process chamber 31. It is understood that both the process inlet device and the purge inlet device include basic structural components for achieving the inlet function and corresponding airflow channels. These basic structural components are common in the prior art or can be adapted for use in the process inlet device and purge inlet device of this application, and will not be described in detail here. That is, the technical solution provided in this embodiment optimizes the structure and arrangement of the gas paths to achieve a more uniform vapor deposition process. Further described, the process gas inlet device has at least two process gas channels 22, each of which is connected to the process chamber 31 to provide laminar process gas to different areas of the substrate surface; the purge gas inlet device includes at least two purge gas channels 21, each of which is located above the process gas channels 22 and is connected to the process chamber 31 to provide at least two purge gas paths to the space between the laminar process gas and the top wall of the process chamber 31. Multiple process gas channels 22 facilitate a more uniform source gas distribution to the substrate, promoting uniform epitaxial growth. Specifically, source gas is supplied to the process chamber 31 through each process gas channel 22, and the flow rate of each source gas path is controlled. Multiple purge gas channels 21 improve the isolation effect of the purge gas, providing isolation in different areas or directions, preventing source gas from escaping upwards, reducing undesirable deposition on the top wall of the process chamber 31 of the vapor deposition equipment, and facilitating fine control of the deposition process to improve the utilization rate of the source gas.

[0065] In some embodiments, see Figures 2 to 4 Along the axial direction of the process chamber 31, process gas channels 22 are respectively arranged in a one-to-one correspondence with purge gas channels 21. Specifically, the process gas channels 22 include a first process gas path 221 and a second process gas path 222 arranged side by side in the horizontal direction, and the purge gas channels 21 include a first purge gas path 211 and a second purge gas path 212 arranged side by side in the horizontal direction. The first process gas path 221 and the first purge gas path 211 are arranged vertically correspondingly and have the same channel width, and the second process gas path 222 and the second purge gas path 212 are arranged vertically correspondingly and have the same channel width. In an optional embodiment, the height of the process gas channel 22 may have a different channel height than that of the purge gas channel 21, for example, the height of the process gas channel 22 may be greater than the height of the purge gas channel 21, so as to provide sufficient source gas for the vapor deposition process on the substrate surface.

[0066] In some embodiments, see also [link to previous document]. Figures 2 to 4 Both the purging gas passage 21 and the process gas passage 22 are arranged radially along the process chamber 31. Figure 4 This is a top-view cross-sectional diagram of the air intake device 2. The first process gas path 221 and the second process gas path 222 are parallel to each other, and both are oriented towards the process chamber 31. The laminar source gas flow area of ​​the process gas path 22 covers the corresponding area above the substrate to provide a more uniform vapor deposition process. Correspondingly, the purge gas flow area of ​​the purge gas path 21 can also cover the laminar source gas area to provide good gas isolation between the laminar source gas and the top wall, preventing poor deposition on the top wall.

[0067] In some embodiments, each purge gas path of the purge gas channel 21 and each process gas path of the process gas channel 22 are arranged radially along the substrate (not shown). Taking each process gas path as an example, the process gas paths extend into the substrate area shielded by each process chamber 31 and are arranged sequentially radially along the substrate.

[0068] In some embodiments, see also [link to previous document]. Figures 2 to 4 The air intake device 2 specifically includes an air intake body 200 and a first isolation device 201. The first isolation device 201 is horizontally sealed inside the air intake body 200 and abuts against the inner wall of the air intake body 200. The first isolation device 201 penetrates the air intake body 200 radially to form a process air intake device and a purge air intake device, that is, to form a process gas channel 22 and a purge gas channel 21, respectively. In an optional embodiment, the first isolation device 201 and the air intake body 200 are detachably connected. By adjusting the height of the first isolation device 201 inside the air intake body 200, the height of the purge gas channel 21 and the process gas channel 22 can be changed, thereby adjusting the airflow pressure of the process source gas and the purge gas to achieve vapor deposition process parameters with excellent substrate growth quality and isolation effect.

[0069] In some embodiments, see also [link to previous document]. Figures 2 to 4 The air intake device 2 also includes several height-adjustable second isolation devices 202. The second isolation devices 202 are disposed inside the air intake body 200 and abut against the inner wall of the air intake body 200 and the first isolation device 201, respectively, to form at least two sub-process air intake devices and at least two sub-purge air intake devices, that is, to form a first purge air passage 211 and a second purge air passage 212, and a first process air passage 221 and a second process air passage 222, respectively. In an optional embodiment, the second isolation devices 202 are also detachably connected to the air intake body 200 and the first isolation device 201 to facilitate adjustment of the widths of the two purge air passages of the purge air passage 21 and the two process air passages of the process air passage 22.

[0070] In some embodiments, returning Figure 2 The inlet device 2 is further provided with a drive inlet device, which is located below the process inlet device and extends from the inlet device 2 into the base, communicating with the base air passage 33 to provide drive gas for rotating the substrate. Further, the drive inlet device includes a drive gas channel 23 and a drive gas pipe seat, with both ends of the drive gas channel 23 connected to the drive gas inlet end and the base air passage 33, respectively. The drive inlet device sprays gas into the base air passage 33 to drive the substrate placed on the recess 32 to rotate within the recess 32, providing a more uniform deposition effect on the upper surface of the substrate.

[0071] In some embodiments, the vapor deposition apparatus provided in this embodiment also includes a support device (not shown) disposed inside the air intake device 2. The support device is used to support at least one of the sub-process air intake device, the sub-purge air intake device, and the drive air intake device. The support device is a common technical means for those skilled in the art to achieve the supporting function of related devices, and will not be described in detail here.

[0072] In some embodiments, see also [link to previous document]. Figure 2 The vapor deposition equipment provided in this embodiment also includes a main control device 8, a growth monitoring device 6, and a gas distribution device 11. The growth monitoring device 6 is disposed in the process chamber 31 to obtain growth information of the semiconductor material layer on the substrate surface. The gas distribution device 11 is connected to each sub-process gas inlet device and each sub-purge gas inlet device. The main control device 8 is communicatively connected to the gas distribution device 11 and the growth monitoring device 6 to obtain growth information and, based on the growth information, controls the gas inlet of each sub-process gas inlet device and each sub-purge gas inlet device by controlling the gas distribution device 11. That is, the gas distribution device 11 can be used to control the flow rate and pressure of the first process gas path 221, the second process gas path 222, the first purge gas path 211, and the second purge gas path 212 respectively, so as to achieve uniformity of source gas flow distribution above the substrate and uniformity of substrate surface deposition.

[0073] In some embodiments, the growth monitoring device 6 includes an optical measurement device and a detector connected in communication. A detection window is provided at the top of the process chamber 31, and the optical measurement device and detector are located within this window. The optical measurement device emits a detection beam through the detection window to the semiconductor material layer deposited on the substrate. The reflected beam formed by the semiconductor material layer reflecting the detection beam is detected by the detector, obtaining the reflectivity of the semiconductor material layer. Based on this reflectivity, as well as information such as the intensity of the reflected light, the intensity of the incident light, the refractive index of the semiconductor material, and the absorption coefficient, the thickness information of the semiconductor material layer can be calculated. The specific calculation method is a conventional technique used by those skilled in the art.

[0074] In some embodiments, see Figure 2The vapor deposition equipment also includes a pressure detection device 7 and a pressure control device. The sensors of the pressure detection device 7 can be distributed in multiple areas of the process chamber 31 to provide a more comprehensive view of the process status of the process chamber 31. The main control device 8 is communicatively connected to the pressure detection device 7 and the pressure control device to acquire and control the gas distribution device 11 based on growth and pressure information, thereby controlling the gas intake of each sub-process gas intake device and each sub-purge gas intake device. In specific application scenarios, for example, when the growth monitoring device 6 detects uneven growth of the substrate semiconductor layer, or when the pressure in the process chamber 31 fluctuates, or when the deposited layer on the top wall of the process chamber 31 falls off, the main control device 8 controls the gas distribution device 11 to adjust the purge gas flow rate of the purge gas channel 21 or the source gas flow rate of the process gas channel 22 to achieve a new equilibrium state in the vapor deposition process, which facilitates the subsequent obtaining of a relatively uniform substrate deposition film.

[0075] In some embodiments, see also [link to previous document]. Figure 2 The vapor deposition equipment also includes an upstream sealing device 1 and a downstream sealing device 5. The upstream sealing device 1 is installed at one end of the air inlet of the air inlet device 2, ensuring a complete seal at the air inlet port to prevent leakage of source gas, purge gas, or driving gas during the air intake process. This is crucial for maintaining the gas concentration and pressure inside the equipment. The upstream sealing device 1 also effectively prevents external air, dust, and other impurities from entering the equipment, thereby maintaining the cleanliness and purity of the deposition environment. The downstream sealing device 5 is installed at one end of the exhaust device 4, ensuring a complete seal at the exhaust port to prevent exhaust gas from leaking into the external environment, reducing environmental pollution and safety hazards. It also ensures that the reaction exhaust gas can be smoothly discharged to the outside of the system through the exhaust channel 41 of the exhaust device 4.

[0076] Example 2:

[0077] See Figure 2 , Figure 5 and Figure 6 This embodiment also provides a vapor phase growth device.

[0078] The vapor phase growth apparatus provided in this embodiment includes a process device 3, which contains a process chamber 31. A base for supporting a substrate is disposed within the process chamber 31. An air inlet device 2 is installed on one outer wall of the process device 3, comprising a purge air inlet device and a process air inlet device arranged sequentially from top to bottom. These devices provide process airflow and purge airflow to the process chamber 31, respectively. The process airflow is a laminar source gas close to the substrate surface, while the purge airflow is gas positioned between the process airflow and the top wall of the process chamber 31. The purge airflow layer isolates the process airflow from the top wall of the process chamber 31, confining the source gas as close as possible to the space near the substrate surface, improving the utilization rate of the source gas, and preventing the source gas from diffusing upwards to the top wall of the process chamber 31 and generating a defective deposition layer.

[0079] The similarities with Embodiment 1 will not be repeated here. The differences between this embodiment and Embodiment 1 will be described in detail below.

[0080] Along the axial direction of the process chamber 31, process gas channels 22 are respectively arranged one-to-one with purge gas channels 21. Specifically, the purge gas channels 21 include a first purge gas path 211, a second purge gas path 212, and a third purge gas path 213 arranged side by side in the horizontal direction. The first process gas path 221 is vertically aligned with the first purge gas path 211 and has the same channel width. The second process gas path 222 is vertically aligned with the second purge gas path 212 and has the same channel width. The third process gas path 223 is vertically aligned with the third purge gas path 213 and has the same channel width. In an optional embodiment, the widths of the first process gas path 221 and the third process gas path 223 are equal and smaller than the width of the second process gas path 222. The second process gas path 222 serves as the main gas supply channel for the source gas, while the process gas paths on both sides serve as auxiliary gas paths. In an optional embodiment, the three sub-process gas paths of the process gas channel 22 can also have equal widths. Correspondingly, each sub-purge gas path of the purge gas channel 21 is located above each sub-process gas path of the process gas channel 22 and is set one by one. Therefore, the width setting of each sub-purge gas path of the purge gas channel 21 is the same, and will not be described in detail here.

[0081] In some embodiments, see also [link to previous document]. Figure 2 , Figure 5 and Figure 6 Both the purge gas channel 21 and the process gas channel 22 are arranged radially along the process chamber 31. The first process gas path 221, the second process gas path 222, and the third process gas path 223 are parallel to each other, and all three are oriented towards the process chamber 31. The laminar source gas flow area of ​​the process gas channel 22 covers the corresponding area above the substrate to provide a more uniform vapor deposition process. Correspondingly, the purge gas flow area of ​​the purge gas channel 21 can also cover the laminar source gas area to provide good gas isolation between the laminar source gas and the top wall, preventing undesirable deposition on the top wall.

[0082] In some embodiments, see also [link to previous document]. Figure 2 , Figure 5 and Figure 6The air intake device 2 specifically includes an air intake body 200, a first isolation device 201, and a second isolation device 202. The second isolation device 202 is configured to form a first purge gas path 211, a second purge gas path 212, and a third purge gas path 213, as well as a first process gas path 221, a second process gas path 222, and a third process gas path 223. It is understood that more second isolation devices 202 can be provided to form four or more sub-purge gas paths and sub-process gas paths, providing a more precise and controllable laminar flow source gas for the region above the substrate.

[0083] Example 3:

[0084] See Figure 2 and Figure 7 This embodiment also provides a vapor phase growth device.

[0085] The vapor phase growth apparatus provided in this embodiment includes a process device 3, which contains a process chamber 31. A base for supporting a substrate is disposed within the process chamber 31. An air inlet device 2 is installed on one outer wall of the process device 3, comprising a purge air inlet device and a process air inlet device arranged sequentially from top to bottom. These devices provide process airflow and purge airflow to the process chamber 31, respectively. The process airflow is a laminar source gas close to the substrate surface, while the purge airflow is gas positioned between the process airflow and the top wall of the process chamber 31. The purge airflow layer isolates the process airflow from the top wall of the process chamber 31, confining the source gas as close as possible to the space near the substrate surface, improving the utilization rate of the source gas, and preventing the source gas from diffusing upwards to the top wall of the process chamber 31 and generating a defective deposition layer.

[0086] The similarities with Embodiment 1 and Embodiment 2 will not be repeated here. The differences between this embodiment and Embodiment 1 and Embodiment 2 will be described in detail below.

[0087] Both the purge gas channel 21 and the process gas channel 22 are arranged radially along the substrate, meaning the airflow is directed towards the center of the substrate. Understandably, the extending directions of the purge gas channel 21 and the process gas channel 22 can also be set to any direction between the radial direction of the substrate and the radial direction of the process chamber 31, to determine the optimal gas channel structure based on actual requirements. For example, using... Figure 7 Taking the purge gas paths shown as examples, the outlet orientations of the first purge gas path 211, the second purge gas path 212, and the third purge gas path 213 can be adjusted according to process requirements, so that the purge gas flows from each purge gas path tend to converge towards the center of the process chamber 31. The process gas paths below each purge gas path are correspondingly arranged to meet the process requirements for semiconductor material layer deposition in the central region of the substrate.

[0088] In summary, the technical solution provided in this application configures the gas inlet device as a process gas inlet device and a purge gas inlet device. The process gas inlet device includes at least two sub-process gas inlet devices to provide laminar process gas to different areas of the substrate surface, providing a more uniform source gas density to the substrate, which is beneficial for uniform epitaxial growth. The purge gas inlet device includes at least two sub-purge gas inlet devices to provide at least two purge gas paths to the space between the laminar process gas and the top wall of the process chamber. The multiple purge gas inlet devices improve the isolation effect of the purge gas, thereby increasing the utilization rate of the source gas. They provide isolation in different areas or directions, preventing the source gas from escaping upwards and forming a poor deposition layer on the top wall of the process chamber. The multiple process gas inlet devices and the multiple purge gas inlet devices work together to improve the airflow uniformity within the process chamber, resulting in a more uniform deposited thin film. Therefore, the technical solution of this application is of great significance for manufacturing semiconductor devices with excellent performance.

[0089] The above embodiments are merely illustrative of the principles and effects of this application and are not intended to limit this application. Any person skilled in the art can modify or alter the above embodiments without departing from the spirit and scope of this application. Therefore, all equivalent modifications or alterations made by those skilled in the art without departing from the spirit and technical concept disclosed in this application should still be covered by the claims of this application.

Claims

1. A vapor deposition apparatus characterized by comprising: The application relates to a process chamber, comprising: a process chamber provided with a susceptor for carrying a substrate; a gas inlet device arranged on the outer wall of the process chamber, the gas inlet device comprising a process gas inlet device and a purge gas inlet device; wherein, the process gas inlet device comprises at least two sub-process gas inlet devices, each of the sub-process gas inlet devices being in communication with the process chamber to provide laminar flow process gas to different areas of the substrate surface; the purge gas inlet device comprises at least two sub-purge gas inlet devices, each of the sub-purge gas inlet devices being arranged above each of the sub-process gas inlet devices and being in communication with the process chamber to provide at least two paths of purge gas to the space between the laminar flow process gas and the top wall of the process chamber.

2. The vapor deposition apparatus according to claim 1, wherein Each of the sub-process gas inlet devices is arranged in one-to-one correspondence with each of the sub-purge gas inlet devices along the axial direction of the process chamber.

3. The vapor deposition apparatus according to claim 1, wherein Each of the sub-process gas inlet devices and / or each of the sub-purge gas inlet devices is arranged along the radial direction of the process chamber.

4. The vapor deposition apparatus according to claim 1, wherein The gas inlet device comprises a gas inlet body and a first isolation device; the first isolation device is horizontally sealed inside the gas inlet body and abuts the inner wall of the gas inlet body; the first isolation device penetrates the gas inlet body along the radial direction of the gas inlet body to form the process gas inlet device and the purge gas inlet device.

5. A vapour deposition apparatus as claimed in claim 4, wherein, The gas inlet device further comprises a plurality of second isolation devices with adjustable height, which are arranged inside the gas inlet body and abut the inner wall of the gas inlet body and the first isolation device to form at least two sub-process gas inlet devices and at least two sub-purge gas inlet devices.

6. The vapor deposition apparatus according to claim 1, wherein The top surface of the susceptor is provided with a recess for carrying the substrate, and the recess is internally provided with a susceptor gas channel in communication with the recess; The gas inlet device further comprises a driving gas inlet device, which extends from the gas inlet device to the inside of the susceptor and is in communication with the susceptor gas channel to provide driving gas for driving the substrate to rotate.

7. A vapour deposition apparatus as claimed in claim 6, wherein The driving gas inlet device comprises a driving gas passage and a driving gas tube seat, and the two ends of the driving gas passage are in communication with a driving gas inlet end and the susceptor gas channel, respectively.

8. The vapor deposition apparatus according to claim 6, wherein The application further comprises a support device arranged inside the gas inlet device, which is used to support at least one of the sub-process gas inlet devices, the sub-purge gas inlet devices and the driving gas inlet device.

9. The vapor deposition apparatus according to claim 1, wherein The application further comprises a master control device, a growth monitoring device and a gas distribution device; wherein, The growth monitoring device is arranged in the process chamber to obtain growth information of the semiconductor material layer on the substrate surface; The gas distribution device is in communication with each of the sub-process gas inlet devices and each of the sub-purge gas inlet devices; The master control device is in communication connection with the gas distribution device and the growth monitoring device to obtain growth information, and controls the gas distribution device to control the gas inlet of each of the sub-process gas inlet devices and each of the sub-purge gas inlet devices according to the growth information.

10. A vapour deposition apparatus as claimed in claim 9, wherein, The application further comprises a pressure detection device and a pressure control device; wherein, The master control device is also communicatively connected to the pressure detection device and the pressure control device, so as to acquire growth information and pressure information, and to control the gas distribution device to control the gas inlet of each sub-process gas inlet device and each sub-purge gas inlet device according to the growth information and the pressure information.

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