Low-power-consumption diode

Abstract

The utility model relates to a low-power-consumption diode, which comprises a chip IC2, MOS (Metal Oxide Semiconductor) tubes Q7 and Q8 which are connected in parallel, a triode Q10, resistors R16 and R18 and a diode D7, in the chip IC2, an input signal Vin1 is accessed to a pin 4, and an output signal Vout is accessed to a pin 6; a pin 5 is connected with a base electrode of the triode Q10; the collector electrode of the triode is connected with an input signal Vin1; in the MOS tube Q7, an input signal Vin1 is accessed to a source electrode, and an output signal Vout is accessed to a drain electrode; the grid electrode is connected with the collector electrode of the triode Q10 through a resistor R16; in the MOS tube Q8, an input signal Vin1 is accessed to a source electrode, and an output signal Vout is accessed to a drain electrode; a grid electrode is connected with a collector electrode of the R18 triode Q10 through a resistor; the device is reasonable in design, compact in structure and convenient to use.

Description

Technical Field

[0001] This utility model relates to low-power diodes, which are widely used in rectification, high-power, and poor heat dissipation fields. Background Technology

[0002] Currently, domestic and foreign manufacturers generally use Schottky diodes to solve high-current rectification, but the voltage drop under 600A conditions is more than 0.9V, and the power consumption is still very large. In some high-power applications, heat sinks must be installed, resulting in larger size, greater weight, and lower reliability.

[0003] How to reduce size and weight, increase reliability, and solve heat generation problems in some high-power applications has become an urgent technical issue. Utility Model Content

[0004] Addressing the technical challenges of existing high-power diodes in the market, such as high thermal resistance and high power consumption, requiring heat sinks for high-power applications, and resulting in large size and weight, this invention presents a low-power ideal diode with a 600A current-carrying, fully sealed metal casing. It features a wide input voltage range of 9V to 50V and a voltage drop reduced to tens of mV, significantly lowering power consumption. In some high-power applications, heat sinks are unnecessary, greatly reducing weight and size while improving reliability.

[0005] To solve the above problems, the technical solution adopted by this utility model is as follows:

[0006] A low-power diode includes a power component; the power component includes a chip IC2, MOSFETs Q7 and Q8 connected in parallel, a transistor Q10, resistors R16 and R18, and a diode D7.

[0007] In chip IC2, pin 4 is connected to the input signal Vin1, and pin 6 is connected to the output signal Vout.

[0008] Pin 5 is connected to the base of transistor Q10; the collector of the transistor is connected to the input signal Vin1;

[0009] In MOSFET Q7, the source is connected to the input signal Vin1, and the drain is connected to the output signal Vout; the gate is connected to the collector of transistor Q10 through resistor R16.

[0010] In MOSFET Q8, the source is connected to the input signal Vin1, and the drain is connected to the output signal Vout; the gate is connected to the collector of transistor Q10 through a resistor R18.

[0011] The output signal Vout is grounded through capacitor C1;

[0012] Diode D7 is connected between the base and emitter of transistor Q10.

[0013] As a further improvement to the above technical solution:

[0014] MOSFETs Q7 and Q8 are reverse-connected to the output terminal of diode D7.

[0015] In chip IC2, pins 3 and 1 are left unused, and pin 2 is grounded.

[0016] A chip IC2-2 connected in parallel with chip IC2 is electrically connected between the input signal Vin1 and the output signal Vout.

[0017] The power components are sintered onto the housing; a cover plate is fastened to the housing.

[0018] The power components are connected to printed circuit board components;

[0019] The printed circuit board assembly is connected to three terminals located on the outside of the housing;

[0020] The three terminals are ground, input signal Vin1, and output signal Vout, respectively.

[0021] The cover is a sealed metal tube shell.

[0022] This invention cleverly utilizes the reverse-biased triggering capability of a MOSFET and a body diode to fully realize the function of a diode. When the MOSFET is not triggered, the body diode performs the function of a diode. When the MOSFET is triggered, the losses can be significantly reduced due to the low internal resistance of the MOSFET. Schottky diodes have a voltage drop of over 0.9V at high current, while the diode function implemented using this circuit can have a voltage drop of tens of mV. Furthermore, the device can reliably turn off when the main circuit voltage drops to a certain level.

[0023] This utility model is reasonably designed, low in cost, robust and durable, safe and reliable, simple to operate, time-saving, labor-saving, cost-effective, compact in structure, and easy to use. This utility model is a low-power ideal diode with a design current of 600A. Through a clever design that triggers a reverse-connected MOSFET, compared with traditional diodes, it significantly reduces power consumption by an order of magnitude while fully realizing the functions of a diode. In high-power applications, it can still operate reliably without a heat sink, greatly saving weight and size. The fully sealed metal package can adapt to more severe operating environments. Attached Figure Description

[0024] Figure 1 This is a schematic diagram of the structure of this utility model.

[0025] Figure 2 This is a top view of the structure of this utility model.

[0026] Figure 3 This is a schematic diagram illustrating the principle of this utility model.

[0027] The components include: 1. Printed circuit board assembly; 2. Power assembly; 3. Cover plate; 4. Housing; 5. Terminal blocks. Detailed Implementation

[0028] like Figure 1-3 As shown, the low-power diode in this embodiment includes a power component 2; the power component 2 includes a chip IC2, MOSFETs Q7 and Q8 connected in parallel, a transistor Q10, resistors R16 and R18, and a diode D7.

[0029] In chip IC2, pin 4 is connected to the input signal Vin1, and pin 6 is connected to the output signal Vout.

[0030] Pin 5 is connected to the base of transistor Q10; the collector of the transistor is connected to the input signal Vin1;

[0031] In MOSFET Q7, the source is connected to the input signal Vin1, and the drain is connected to the output signal Vout; the gate is connected to the collector of transistor Q10 through resistor R16.

[0032] In MOSFET Q8, the source is connected to the input signal Vin1, and the drain is connected to the output signal Vout; the gate is connected to the collector of transistor Q10 through a resistor R18.

[0033] The output signal Vout is grounded through capacitor C1;

[0034] Diode D7 is connected between the base and emitter of transistor Q10.

[0035] MOSFETs Q7 and Q8 are reverse-connected to the output terminal of diode D7.

[0036] In chip IC2, pins 3 and 1 are left unused, and pin 2 is grounded.

[0037] A chip IC2-2 connected in parallel with chip IC2 is electrically connected between the input signal Vin1 and the output signal Vout.

[0038] like Figure 3The principle of this utility model is to use DC control, which is controlled by an integrated chip. The shutdown is achieved by a discharge circuit to ensure normal switching of the product. It cleverly utilizes the fact that the MOSFET can be triggered in reverse and the body diode can fully realize the function of a diode. When the MOSFET is not triggered, the body diode performs the function of a diode. When the MOSFET is triggered, because the internal resistance of the MOSFET is low, the power consumption can be greatly reduced. The voltage drop of a Schottky diode at high current is above 0.9V, while the voltage drop of the diode implemented by this circuit can be reduced to tens of mV. When the main circuit voltage drops to a certain level, the ideal diode can also be reliably turned off.

[0039] Taking IC2 as an example, firstly, the input current Vin1 briefly flows through the MOSFET body diodes Q7 and Q8 to output current to Vout. At the same time, the input current Vin1 enters the IN terminal of chip IC2 to power chip IC2. IC2 outputs a trigger signal through the GATE terminal, which passes through the anti-reverse diode D7 and gate resistors R16 and R18 to the gates of MOSFETs Q7 and Q8. The MOSFETs enter the conducting state, and the main current quickly transfers from the MOSFET body diodes to the MOSFET conductive channel, entering a low-loss mode. When the current input Vin1 stops, IC2 stops working. The gate charge of MOSFET body diodes 7 and Q8 forms a discharge circuit through resistors R16 and R18 and transistor Q10, quickly dissipating the charge.

[0040] This invention cleverly utilizes the reverse-biased triggering capability of a MOSFET and a body diode to fully realize the function of a diode. When the MOSFET is not triggered, the body diode performs the function of a diode. When the MOSFET is triggered, the power consumption can be significantly reduced due to the low internal resistance of the MOSFET. Schottky diodes have a voltage drop of over 0.9V at high current, while the diode function implemented using this circuit can have a voltage drop reduced to tens of mV. Furthermore, the device can reliably turn off when the main circuit voltage drops to a certain level.

[0041] like Figure 1 , 2 The structure of this embodiment adopts a brand-new fully sealed metal structure with side legs. The power components are sintered on the metal shell, and the control part is fixed above the power components using a PCB, which greatly reduces the size.

[0042] The power component 2 is sintered onto the housing 4; a cover plate 3 is fastened onto the housing 4;

[0043] Power component 2 is connected to a printed circuit board assembly;

[0044] The printed circuit board assembly is connected to three terminals 5 with the terminals located on the outside of the housing 4;

[0045] The three terminals 5 are ground, input signal Vin1, and output signal Vout, respectively.

[0046] Cover plate 3 is a sealed metal tube shell.

[0047] This utility model is described in detail for the purpose of making the disclosure clearer, and the prior art will not be listed one by one.

[0048] Finally, it should be noted that the above embodiments are only used to illustrate the technical solutions of this utility model, and not to limit it. Although this utility model has been described in detail with reference to the foregoing embodiments, those skilled in the art should understand that modifications can still be made to the technical solutions described in the foregoing embodiments, or equivalent substitutions can be made to some of the technical features. It is obvious to those skilled in the art that multiple technical solutions of this utility model can be combined. These modifications or substitutions do not cause the essence of the corresponding technical solutions to deviate from the spirit and scope of the technical solutions of the embodiments of this utility model. All technical contents not described in detail in this utility model are publicly known technologies.

Claims

1. A low power diode characterized by: It comprises a power component (2); the power component (2) comprises a chip IC2, connected MOS tubes Q7, Q8, a triode Q10, resistors R16, R18 and a diode D7; In the chip IC2, pin 4 is connected to an input signal Vin1 and pin 6 is connected to an output signal Vout; Pin 5 is connected to the base of the triode Q10; the collector of the triode is connected to the input signal Vin1; In the MOS tube Q7, the source is connected to the input signal Vin1, the drain is connected to the output signal Vout; the grid is connected to the collector of the triode Q10 through the resistor R16; In the MOS tube Q8, the source is connected to the input signal Vin1, the drain is connected to the output signal Vout; the grid is connected to the collector of the triode Q10 through the resistor R18; The output signal Vout is connected to the ground through the capacitor C1; The diode D7 is connected between the base and the emitter of the triode Q10.

2. The low power diode of claim 1, wherein: The MOS tubes Q7, Q8 are connected reversely at the output end of the diode D7.

3. The low power diode of claim 1, wherein: In the chip IC2, pin 3 and pin 1 are vacant, and pin 2 is connected to the ground.

4. The low power diode of claim 1, wherein: A chip IC2-2 is connected in parallel with the chip IC2 between the input signal Vin1 and the output signal Vout.

5. The low power diode of claim 1, wherein: The diode D7 is a Schottky diode.

6. The low power diode of claim 1, wherein: The power component (2) is sintered on the shell (4); the cover plate (3) is buckled on the shell (4); The power component (2) is connected with a printed board component; The printed board component is connected with three wire legs (5) whose wire connection ends are located outside the shell (4); The three wire legs (5) are respectively the ground, the input signal Vin1 and the output signal Vout.

7. The low power diode of claim 6, wherein: The cover plate (3) is a sealed metal tube shell.

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