Wafer processing system

Abstract

The utility model discloses a wafer processing system, and belongs to the technical field of semiconductors. The wafer processing system comprises processing equipment, transportation equipment and transfer equipment, the transfer equipment comprises a plurality of switching units, the switching units are arranged on the same sides of a laser irradiation unit, a wafer stripping unit and a grinding unit, and each switching unit comprises a first moving module, a second moving module, two third moving modules and two adsorption components. The first moving module extends in the first direction, the second moving module is arranged on the first moving module and can move in the first direction, the two third moving modules are arranged on the two sides of the second moving module respectively and can move in the second direction, and the adsorption components are arranged on the third moving modules and can move in the third direction. According to the utility model, the cutting, stripping and grinding of the crystal ingot can be automatically completed, the production efficiency is improved, and the batch production of wafers is facilitated.

Description

Technical Field

[0001] This utility model relates to the field of semiconductor technology, and in particular to a wafer processing system. Background Technology

[0002] Third-generation semiconductor materials such as SiC, GaN, or diamond have various excellent material properties, which make them well-suited for use in power devices or LEDs.

[0003] Silicon carbide wafers are typically produced by wire cutting, but this process results in significant material loss and is time-consuming, greatly impacting the cost of silicon carbide. Therefore, the following technique is proposed: A laser beam with a wavelength transparent to single-crystal SiC is focused inside the single-crystal SiC ingot to irradiate the ingot, forming a release layer on the predetermined cutting surface. The SiC wafer is then peeled off from the single-crystal SiC ingot along the cutting surface with the release layer formed.

[0004] However, the processes of forming a release layer on a single-crystal SiC ingot, peeling SiC wafers off the single-crystal SiC ingot, and grinding the upper surface of the single-crystal SiC ingot to planarize it are performed manually, resulting in poor production efficiency.

[0005] Therefore, there is an urgent need to provide a wafer processing system to solve the above problems. Utility Model Content

[0006] The purpose of this invention is to provide a wafer processing system that can automatically complete the cutting, peeling and grinding of wafer ingots, improve production efficiency, and facilitate the mass production of wafers.

[0007] To achieve the above objectives, the following technical solution is provided:

[0008] The wafer processing system includes:

[0009] The processing equipment includes a laser irradiation unit, a wafer stripping unit, and a grinding unit arranged sequentially along a first direction;

[0010] The transport equipment includes a first transmission unit, a second transmission unit, a first loading / unloading unit, and a second loading / unloading unit. The first transmission unit and the second transmission unit are parallel and spaced apart along a second direction. The first loading / unloading unit is located upstream of the first transmission unit and the second transmission unit, and the second loading / unloading unit is located downstream of the first transmission unit and the second transmission unit.

[0011] The transfer device includes multiple transfer units. Each transfer unit is located on the same side of the laser irradiation unit, the wafer stripping unit, and the grinding unit. Each transfer unit includes a first moving module, a second moving module, two third moving modules, and two adsorption components. The first moving module extends along a first direction. The second moving module is disposed on the first moving module and can move along the first direction. The two third moving modules are respectively disposed on both sides of the second moving module and can move along a second direction. The adsorption components are disposed on the third moving modules and can move along a third direction.

[0012] As an optional embodiment of the wafer processing system, the first conveying unit includes a first frame and a first conveyor belt, the first conveyor belt being rotatably mounted on the first frame, and the first conveyor belt being used to convey materials downstream along a first direction; and / or

[0013] The second transmission unit includes a second frame and a second transmission belt. The second transmission belt is rotatably mounted on the second frame and is used to transport materials upstream along a first direction.

[0014] As an optional solution for the wafer processing system, the first loading and unloading unit includes a fourth moving module and a first lifting platform. The fourth moving module extends in a third direction, and the first lifting platform is disposed on the fourth moving module and is movable in the third direction. A third conveyor belt is rotatably disposed on the first lifting platform; and / or

[0015] The second loading and unloading unit includes a fifth moving module and a second lifting platform. The fifth moving module extends in a third direction, and the second lifting platform is disposed on the fourth moving module and can move in a third direction. A fourth conveyor belt is rotatably disposed on the second lifting platform.

[0016] As an alternative to the wafer processing system, the wafer processing system also includes:

[0017] The ingot loading unit includes a storage base and multiple fifth conveyor belts. The storage base is provided with multiple storage compartments at intervals along a third direction. A fifth conveyor belt is rotatably arranged on the bottom wall of each storage compartment. The fifth conveyor belt is used to transport materials to the first loading and unloading unit.

[0018] As an alternative to the wafer processing system, the laser irradiation unit includes a first base with a gantry, a first stage, a laser lens assembly, and an ultrasonic device. The first stage is located on the first base, and the laser lens assembly and the ultrasonic device are both located on the gantry and facing the first stage.

[0019] As an optional solution for the wafer processing system, the laser irradiation unit further includes a sixth moving module and a seventh moving module. The sixth moving module is disposed on the first base and extends along the second direction. The seventh moving module is disposed on the sixth moving module and can move along the second direction. The first stage is disposed on the seventh moving module and can move along the first direction.

[0020] As an optional solution for the wafer processing system, the laser irradiation unit further includes an eighth moving module, which is disposed on the gantry and extends in a third direction. The laser lens assembly and the ultrasonic device are both disposed on the eighth moving module and are capable of moving in a third direction.

[0021] As an optional solution for the wafer processing system, the wafer stripping unit includes a second base, a stripping component, and a first moving platform component. Both the stripping component and the first moving platform component are disposed on the second base. The first moving platform component can transport the wafer to the area below the stripping component, and the stripping component can adsorb the wafer and move it up and down in a third direction.

[0022] As an optional solution for the wafer processing system, the grinding unit includes a third base, a grinding component, and a second moving platform component. Both the grinding component and the second moving platform component are disposed on the third base. The second moving platform component can transport the ingot to the area below the grinding component, and the grinding component can move closer to or further away from the second moving platform component in a third direction.

[0023] As an optional solution for the wafer processing system, the first moving platform component includes a ninth moving module and a second stage. The ninth moving module is disposed on the second base, and the second stage is disposed on the ninth moving module and is capable of moving along a second direction; and / or

[0024] The second mobile platform component includes a tenth mobile module and a third platform. The tenth mobile module is mounted on the third base, and the third platform is mounted on the tenth mobile module and is capable of moving along a second direction.

[0025] Compared with the prior art, the beneficial effects of this utility model are as follows:

[0026] The wafer processing system provided by this invention arranges the laser irradiation unit, wafer stripping unit, and grinding unit of the processing equipment sequentially along a first direction for irradiating, stripping, and grinding the wafer ingot. A transport device is installed beside the processing equipment, and a transfer unit is provided on the same side of each of the laser irradiation unit, wafer stripping unit, and grinding unit. Two adsorption components of the transfer unit can simultaneously transport two materials, accelerating the production efficiency of the wafer processing system. The positions of the adsorption components can be adjusted using a first moving module, a second moving module, and a third moving module for precise material gripping or placement. Through the cooperation of the first transmission unit, the second transmission unit, the first loading / unloading unit, and the second loading / unloading unit, parallel material transport is achieved, further accelerating transport efficiency. Attached Figure Description

[0027] To more clearly illustrate the technical solutions in the embodiments of this utility model, the drawings used in the description of the embodiments of this utility model will be briefly introduced below. Obviously, the drawings described below are only some embodiments of this utility model. For those skilled in the art, other drawings can be obtained based on the content of the embodiments of this utility model and these drawings without creative effort.

[0028] Figure 1 This is an assembly diagram of the wafer processing system in an embodiment of the present invention;

[0029] Figure 2 This is a schematic diagram of the structure of the adapter unit in an embodiment of the present utility model;

[0030] Figure 3 This is a schematic diagram of the structure of the first loading and unloading unit in an embodiment of this utility model;

[0031] Figure 4 This is a schematic diagram of the structure of the second loading and unloading unit in an embodiment of this utility model;

[0032] Figure 5 This is a schematic diagram of the structure of the ingot loading unit in an embodiment of this utility model;

[0033] Figure 6 This is a schematic diagram of the structure of the laser irradiation unit in an embodiment of this utility model;

[0034] Figure 7 This is a schematic diagram of the wafer stripping unit in an embodiment of the present invention;

[0035] Figure 8 This is a schematic diagram of the grinding unit in an embodiment of the present invention.

[0036] Figure label:

[0037] 100. Laser irradiation unit; 200. Wafer stripping unit; 300. Grinding unit; 400. First transmission unit; 500. Second transmission unit; 600. First loading and unloading unit; 700. Second loading and unloading unit; 800. Transfer unit; 900. Ingot loading unit;

[0038] 11. First base; 12. Gantry frame; 13. First platform; 14. Laser lens assembly; 15. Ultrasonic device; 16. Sixth moving module; 17. Seventh moving module; 18. Eighth moving module; 19. Ingot positioning device; 110. Ingot height measuring device;

[0039] 21. Second base; 22. Peeling component; 23. First moving platform component; 231. Ninth moving module; 232. Second platform;

[0040] 31. Third base; 32. Grinding component; 33. Second moving platform component; 331. Tenth moving module; 332. Third platform;

[0041] 41. First frame; 42. First conveyor belt;

[0042] 51. Second rack; 52. Second conveyor belt;

[0043] 61. Fourth moving module; 62. First lifting platform; 63. Third conveyor belt;

[0044] 71. Fifth moving module; 72. Second lifting platform; 73. Fourth conveyor belt;

[0045] 81. First moving module; 82. Second moving module; 83. Third moving module; 84. Adsorption component;

[0046] 91. Storage seat; 92. Storage compartment; 93. Fifth conveyor belt. Detailed Implementation

[0047] To make the objectives, technical solutions, and advantages of the embodiments of this utility model clearer, the technical solutions of the embodiments of this utility model will be clearly and completely described below with reference to the accompanying drawings. Obviously, the described embodiments are only some embodiments of this utility model, and not all embodiments. The components of the embodiments of this utility model described and shown in the accompanying drawings can generally be arranged and designed in various different configurations.

[0048] In the description of this utility model, it should be noted that the terms "upper," "lower," "left," "right," "vertical," "horizontal," "inner," and "outer," etc., indicate the orientation or positional relationship based on the orientation or positional relationship shown in the accompanying drawings, or the orientation or positional relationship commonly used when the product of this utility model is in use. They are used only for the convenience of describing this utility model and for simplifying the description, and do not indicate or imply that the device or element referred to must have a specific orientation, or be constructed and operated in a specific orientation. Therefore, they should not be construed as limitations on this utility model. Furthermore, the terms "first," "second," and "third," etc., are used only to distinguish descriptions and should not be construed as indicating or implying relative importance. In the description of this utility model, unless otherwise stated, "a plurality of" means two or more.

[0049] In the description of this utility model, it should also be noted that, unless otherwise explicitly specified and limited, the terms "set" and "connection" should be interpreted broadly. For example, they can refer to a fixed connection, a detachable connection, or an integral connection; they can refer to a mechanical connection or an electrical connection. Those skilled in the art can understand the specific meaning of the above terms in this utility model based on the specific circumstances.

[0050] The embodiments of this utility model are described in detail below. Examples of these embodiments are shown in the accompanying drawings, wherein the same or similar reference numerals denote the same or similar elements or elements having the same or similar functions throughout. The embodiments described below with reference to the accompanying drawings are exemplary and are only used to explain this utility model, and should not be construed as limiting this utility model.

[0051] To automate the cutting, peeling, and grinding of crystal ingots, improve production efficiency, and facilitate the mass production of wafers, this embodiment provides a wafer processing system, which is described below in conjunction with... Figures 1 to 8 The specific content of this embodiment will be described in detail. It should be noted that the first direction mentioned in this embodiment is... Figure 1 The X direction in this embodiment, and the second direction mentioned in this embodiment are... Figure 1 In the Y direction, the third direction mentioned in this embodiment is Figure 1 The Z-direction in the image. This embodiment uses SiC processing as an example, but this technology can also be applied to the processing of other high-hardness, light-transmitting materials.

[0052] like Figure 1 Combination Figure 2As shown, the wafer processing system in this embodiment includes processing equipment, transport equipment, and transfer equipment. The processing equipment includes a laser irradiation unit 100, a wafer stripping unit 200, and a grinding unit 300 arranged sequentially along a first direction. The transport equipment includes a first transfer unit 400, a second transfer unit 500, a first loading / unloading unit 600, and a second loading / unloading unit 700. The first transfer unit 400 and the second transfer unit 500 are parallel and spaced apart along a second direction. The first loading / unloading unit 600 is located upstream of the first transfer unit 400 and the second transfer unit 500, and the second loading / unloading unit 700 is located downstream of the first transfer unit 400 and the second transfer unit 500. The transfer equipment includes multiple transfer units 800. The laser irradiation unit 100, the wafer stripping unit 200 and the grinding unit 300 are all provided with transfer units 800 on the same side. The transfer unit 800 includes a first moving module 81, a second moving module 82, two third moving modules 83 and two adsorption components 84. The first moving module 81 extends along a first direction. The second moving module 82 is disposed on the first moving module 81 and can move along the first direction. The two third moving modules 83 are respectively disposed on both sides of the second moving module 82 and can move along a second direction. The adsorption components 84 are disposed on the third moving modules 83 and can move along a third direction.

[0053] In summary, the wafer processing system provided in this embodiment arranges the laser irradiation unit 100, wafer stripping unit 200, and grinding unit 300 of the processing equipment sequentially along a first direction for irradiating, stripping, and grinding the wafer ingot. A transport device is installed beside the processing equipment, and a transfer unit 800 is provided on the same side of the laser irradiation unit 100, wafer stripping unit 200, and grinding unit 300. Two adsorption components 84 of the transfer unit 800 can simultaneously transport two materials, accelerating the production efficiency of the wafer processing system. The positions of the adsorption components 84 can be adjusted using the first moving module 81, the second moving module 82, and the third moving module 83 for precise material gripping or placement. The parallel transport of materials is achieved through the cooperation of the first transmission unit 400, the second transmission unit 500, the first loading / unloading unit 600, and the second loading / unloading unit 700, accelerating transport efficiency. The transfer unit 800 can remove materials from or return them to the first transmission unit 400.

[0054] Furthermore, referring to Figure 1As shown, the first transmission unit 400 includes a first frame 41 and a first conveyor belt 42. The first conveyor belt 42 is rotatably mounted on the first frame 41 and is used to convey materials downstream along a first direction. And / or the second transmission unit 500 includes a second frame 51 and a second conveyor belt 52. The second conveyor belt 52 is rotatably mounted on the second frame 51 and is used to convey materials upstream along the first direction. Specifically, the first frame 41 is located above the second frame 51. Multiple first rotating rollers are arranged on the first frame 41 along the first direction. The first conveyor belt 42 is wound around the first rotating rollers and is driven by a first motor to transport materials towards the second loading / unloading unit 700. Multiple second rotating rollers are arranged on the second frame 51 along the first direction. The second conveyor belt 52 is wound around the second rotating rollers and is driven by a second motor to transport materials towards the first loading / unloading unit 600.

[0055] Furthermore, referring to Figures 1 to 4 As shown, the first loading / unloading unit 600 includes a fourth moving module 61 and a first lifting platform 62. The fourth moving module 61 extends along a third direction, and the first lifting platform 62 is disposed on the fourth moving module 61 and can move along the third direction. A third conveyor belt 63 is rotatably disposed on the first lifting platform 62. And / or the second loading / unloading unit 700 includes a fifth moving module 71 and a second lifting platform 72. The fifth moving module 71 extends along a third direction, and the second lifting platform 72 is disposed on the fourth moving module 61 and can move along the third direction. A fourth conveyor belt 73 is rotatably disposed on the second lifting platform 72. Specifically, at least two third rotating rollers are installed on the first lifting platform 62, and the third conveyor belt 63 is wound around the third rotating rollers. A third motor is drivenly connected to the third rotating rollers. At least two fourth rotating rollers are installed on the second lifting platform 72, and the fourth conveyor belt 73 is wound around the fourth rotating rollers. A fourth motor is drivenly connected to the fourth rotating rollers. Belt drive is used to achieve the cyclical conveying of materials.

[0056] Furthermore, such as Figure 5As shown, the wafer processing system also includes an ingot loading unit 900. The ingot loading unit 900 includes a receiving base 91 and multiple fifth conveyor belts 93. The receiving base 91 has multiple receiving compartments 92 spaced apart along a third direction. A fifth conveyor belt 93 is rotatably mounted on the bottom wall of each receiving compartment 92. The fifth conveyor belt 93 is used to transport materials to the first loading / unloading unit 600. The receiving compartments 92 can store ingots. When the first lifting platform 62 of the first loading / unloading unit 600 moves to the corresponding receiving compartment 92, the fifth conveyor belt 93 is activated to transfer the ingot to the third conveyor belt 63 of the first loading / unloading unit 600. The first lifting platform 62 rises to a position flush with the first transmission unit 400, and the crystal ingot is transferred to the first transmission belt 42. After processing, the second loading and unloading unit 700 transfers the crystal ingot from the first transmission unit 400 to the second transmission unit 500, and the first loading and unloading unit 600 transfers the crystal ingot from the second transmission unit 500 back to the first transmission unit 400, which facilitates multiple processing of the crystal ingot.

[0057] Furthermore, such as Figure 6 As shown, the laser irradiation unit 100 includes a first base 11 with a gantry 12, a first stage 13, a laser lens assembly 14, and an ultrasonic device 15. The first stage 13 is located on the first base 11, and the laser lens assembly 14 and the ultrasonic device 15 are both located on the gantry 12 and face the first stage 13. The ultrasonic device 15 can generate transverse vibration waves, which are used to vibrate the ingot and cause cracks to propagate laterally. In this embodiment, while the laser lens assembly 14 emits pulses, the transverse growth and connection of the modified cracks are assisted by ultrasonic vibration, which can increase the laser scanning displacement by 1.4 times and the laser scanning speed by 1.2 times. Under these conditions, the laser modification scanning of a 6-inch ingot can be completed within 6 minutes.

[0058] Furthermore, such as Figure 7 and Figure 8 As shown, the laser irradiation unit 100 further includes a sixth moving module 16 and a seventh moving module 17. The sixth moving module 16 is disposed on the first base 11 and extends along a second direction, and the seventh moving module 17 is disposed on the sixth moving module 16 and can move along the second direction. The first stage 13 is disposed on the seventh moving module 17 and can move along a first direction. By adding the sixth moving module 16 and the seventh moving module 17, it is easier to adjust the position of the first stage 13 and transport the crystal ingot below the irradiation area of ​​the laser lens assembly 14. Through the irradiation scanning of the laser lens assembly 14, a modified layer is formed at a set depth of the crystal ingot, and the laser is used to complete the slicing of the crystal ingot.

[0059] Furthermore, the laser irradiation unit 100 also includes an eighth moving module 18, which is mounted on the gantry 12 and extends along a third direction. The laser lens assembly 14 and the ultrasonic device 15 are both mounted on the eighth moving module 18 and can move along the third direction. By adding the eighth moving module 18, it is easier to adjust the laser lens assembly 14 and the ultrasonic device 15 to a suitable height. After positioning by the ingot positioning device 19 and measuring the ingot height by the ingot height measuring device 110, the ingot on the first stage 13 begins pulse scanning along the set laser scanning path. For the positions that have been laser-scanned, the ultrasonic device 15 is used to promote the transverse growth and connection of the modified cracks. Laser modification and ultrasonic-assisted crack propagation continue until the entire surface is fully processed.

[0060] Furthermore, the wafer stripping unit 200 includes a second base 21, a stripping member 22, and a first moving platform member 23. Both the stripping member 22 and the first moving platform member 23 are mounted on the second base 21. The first moving platform member 23 can transport the ingot below the stripping member 22, and the stripping member 22 can adsorb the wafer and move it vertically in a third direction. The ingot, after laser irradiation, is moved by the first moving platform member 23 to below the stripping member 22. The stripping member 22 descends and adsorbs the wafer on the ingot, and then the stripping member 22 and the wafer rise together to separate the wafer from the ingot. The addition of ultrasonic-assisted crack propagation reduces the stripping stress required by the wafer stripping unit 200, while also reducing the surface roughness of the stripped surface, thereby reducing the amount of grinding. The stripping unit process will be completed within 2 minutes.

[0061] Further, the grinding unit 300 includes a third base 31, a grinding component 32, and a second moving platform component 33. Both the grinding component 32 and the second moving platform component 33 are disposed on the third base 31. The second moving platform component 33 can transport the ingot to a position below the grinding component 32, and the grinding component 32 can move closer to or further away from the second moving platform component 33 in a third direction. The stripped ingot can be transferred to the second moving platform component 33 via the transfer unit 800 and the first transmission unit 400. When the ingot or wafer moves directly below the grinding component, the grinding component 32 descends and begins grinding the upper surface of the ingot. Exemplarily, two grinding units 300 are provided in this embodiment, one grinding unit 300 for rough grinding of the surface and the other grinding unit 300 for fine grinding of the surface, to meet the surface roughness requirements of the ingot.

[0062] Furthermore, the first moving platform component 23 includes a ninth moving module 231 and a second stage 232. The ninth moving module 231 is disposed on the second base 21 and extends along a second direction. The second stage 232 is disposed on the ninth moving module 231 and is movable along the second direction. And / or the second moving platform component 33 includes a tenth moving module 331 and a third stage 332. The tenth moving module 331 is disposed on the third base 31 and extends along the second direction. The third stage 332 is disposed on the tenth moving module 331 and is movable along the second direction. In this embodiment, the wafer processing system calculates and matches the processing time of each component, and performs scheduling design, enabling the simultaneous processing of four ingots, thereby increasing the wafer production speed to 7 minutes per wafer. Exemplarily, the moving module in this embodiment can be, but is not limited to, a lead screw and slide module.

[0063] Note that the above description is merely a preferred embodiment of the present invention and the technical principles employed. Those skilled in the art will understand that the present invention is not limited to the specific embodiments described herein, and various obvious changes, readjustments, and substitutions can be made without departing from the scope of protection of the present invention. Therefore, although the present invention has been described in detail through the above embodiments, the present invention is not limited to the above embodiments. Many other equivalent embodiments may be included without departing from the concept of the present invention, and the scope of the present invention is determined by the scope of the appended claims.

Claims

1. A wafer processing system, characterized in that, include: The processing equipment includes a laser irradiation unit (100), a wafer stripping unit (200), and a grinding unit (300) arranged sequentially along a first direction; The transport equipment includes a first transmission unit (400), a second transmission unit (500), a first loading / unloading unit (600), and a second loading / unloading unit (700). The first transmission unit (400) and the second transmission unit (500) are arranged in parallel and spaced apart along a second direction. The first loading / unloading unit (600) is located upstream of the first transmission unit (400) and the second transmission unit (500), and the second loading / unloading unit (700) is located downstream of the first transmission unit (400) and the second transmission unit (500). The transfer device includes multiple transfer units (800). The transfer units (800) are all provided on the same side of the laser irradiation unit (100), the wafer stripping unit (200), and the grinding unit (300). Each transfer unit (800) includes a first moving module (81), a second moving module (82), two third moving modules (83), and two adsorption components (84). The first moving module (81) extends along a first direction. The second moving module (82) is disposed on the first moving module (81) and can move along the first direction. The two third moving modules (83) are respectively disposed on both sides of the second moving module (82) and can move along a second direction. The adsorption components (84) are disposed on the third moving modules (83) and can move along a third direction.

2. The wafer processing system according to claim 1, characterized in that, The first transmission unit (400) includes a first frame (41) and a first transmission belt (42). The first transmission belt (42) is rotatably mounted on the first frame (41) and is used to transport materials downstream in a first direction. and / or The second transmission unit (500) includes a second frame (51) and a second transmission belt (52). The second transmission belt (52) is rotatably mounted on the second frame (51) and is used to transport materials upstream along a first direction.

3. The wafer processing system according to claim 2, characterized in that, The first loading / unloading unit (600) includes a fourth moving module (61) and a first lifting platform (62). The fourth moving module (61) extends along a third direction. The first lifting platform (62) is disposed on the fourth moving module (61) and is movable along a third direction. A third conveyor belt (63) is rotatably disposed on the first lifting platform (62); and / or The second loading and unloading unit (700) includes a fifth moving module (71) and a second lifting platform (72). The fifth moving module (71) extends along a third direction. The second lifting platform (72) is disposed on the fourth moving module (61) and can move along a third direction. A fourth conveyor belt (73) is rotatably disposed on the second lifting platform (72).

4. The wafer processing system according to claim 3, characterized in that, The wafer processing system also includes: The ingot loading unit (900) includes a receiving base (91) and a plurality of fifth conveyor belts (93). The receiving base (91) is provided with a plurality of receiving compartments (92) spaced apart along a third direction. A fifth conveyor belt (93) is rotatably provided on the bottom wall of each receiving compartment (92). The fifth conveyor belt (93) is used to transport materials to the first loading and unloading unit (600).

5. The wafer processing system according to claim 1, characterized in that, The laser irradiation unit (100) includes a first base (11) with a gantry (12), a first stage (13), a laser lens assembly (14), and an ultrasonic device (15). The first stage (13) is located on the first base (11), and the laser lens assembly (14) and the ultrasonic device (15) are both located on the gantry (12) and face the first stage (13).

6. The wafer processing system according to claim 5, characterized in that, The laser irradiation unit (100) further includes a sixth moving module (16) and a seventh moving module (17). The sixth moving module (16) is disposed on the first base (11) and extends along the second direction. The seventh moving module (17) is disposed on the sixth moving module (16) and can move along the second direction. The first platform (13) is disposed on the seventh moving module (17) and can move along the first direction.

7. The wafer processing system according to claim 6, characterized in that, The laser irradiation unit (100) further includes an eighth moving module (18), which is disposed on the gantry (12) and extends in a third direction. The laser lens assembly (14) and the ultrasonic device (15) are both disposed on the eighth moving module (18) and are capable of moving in a third direction.

8. The wafer processing system according to any one of claims 1-7, characterized in that, The wafer stripping unit (200) includes a second base (21), a stripping member (22), and a first moving platform member (23). The stripping member (22) and the first moving platform member (23) are both disposed on the second base (21). The first moving platform member (23) can transport the wafer to the area below the stripping member (22). The stripping member (22) can adsorb the wafer and move it up and down in a third direction.

9. The wafer processing system according to claim 8, characterized in that, The grinding unit (300) includes a third base (31), a grinding component (32), and a second moving platform component (33). The grinding component (32) and the second moving platform component (33) are both disposed on the third base (31). The second moving platform component (33) can transport the ingot to the underside of the grinding component (32). The grinding component (32) can move closer to or further away from the second moving platform component (33) in a third direction.

10. The wafer processing system according to claim 9, characterized in that, The first mobile platform component (23) includes a ninth mobile module (231) and a second platform (232). The ninth mobile module (231) is mounted on the second base (21), and the second platform (232) is mounted on the ninth mobile module (231) and is capable of moving along a second direction; and / or The second mobile platform component (33) includes a tenth mobile module (331) and a third platform (332). The tenth mobile module (331) is disposed on the third base (31), and the third platform (332) is disposed on the tenth mobile module (331) and is capable of moving along the second direction.

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