Ion implanter

Abstract

The utility model provides an ion implanter, comprising an ion source reaction chamber used for generating implanted ions; one end of the gas pipeline is connected into the ion source reaction chamber, and the other end of the gas pipeline is provided with a roughing pump; the cooling circulation pipeline is used for cooling the ion source reaction chamber and the roughing pump, a quick connector is arranged on the cooling circulation pipeline, so that a cooling pipeline part of the ion source reaction chamber is detached from the cooling circulation pipeline, and the cooling circulation pipeline is still used for cooling the roughing pump. By arranging the quick connector on the cooling circulation pipeline, when the cooling pipeline part of the ion source reaction chamber is detached from the cooling circulation pipeline, the cooling circulation pipeline can still be used for cooling the roughing pump, so that the roughing pump can keep running, and the phenomenon that a solid coating is formed in a gas pipeline to block the gas pipeline is avoided; and the service lives of ion implanter components such as a roughing pump and a gas pipeline are prolonged.

Description

TECHNICAL FIELD

[0001] The utility model relates to the technical field of semiconductor, in particular to a kind of ion implanter. BACKGROUND

[0002] With the rapid development of semiconductor technology, the manufacturing process of integrated circuit gradually complex, ion implantation technology plays a key role in this process. Ion implantation is a means of doping the surface of semiconductor near area, its core purpose is to change the carrier concentration and conductivity type to achieve the change of semiconductor electrical properties. Ion implanter is mainly composed of ion source, mass analyzer, accelerator, four-stage lens, scanning system and target chamber and other main components.

[0003] When ion implanter runs, a large amount of heat will be generated in ion generation, ion implantation and other processes, so the cooling circulation system of ion implanter is used for cooling multiple components at the same time. However, when only part of the components in the ion implanter needs to be repaired, maintained or replaced individually, the cooling circulation system as a whole needs to be closed, at this time, other components that do not need to be repaired, maintained or replaced but need to be cooled are also closed together. SUMMARY

[0004] Therefore, it is necessary to provide an ion implanter to at least avoid the simultaneous closing of each component in the ion implanter, and improve the service life of the ion implanter.

[0005] To achieve the above-mentioned purpose and other related purposes, the present application provides an ion implanter, comprising:

[0006] Ion source reaction chamber for generating implantation ions;

[0007] Gas pipeline, one end of the gas pipeline is connected to the ion source reaction chamber, and the other end of the gas pipeline is provided with a roughing pump;

[0008] Cooling circulation pipeline, the cooling circulation pipeline is used for cooling the ion source reaction chamber and the roughing pump, and a quick connector is arranged on the cooling circulation pipeline to detach the cooling pipeline part of the ion source reaction chamber from the cooling circulation pipeline, and the cooling circulation pipeline is still used for cooling the roughing pump.

[0009] In one embodiment, the quick connector includes an insulating quick connector for avoiding high-voltage discharge of the ion source reaction chamber.

[0010] In one embodiment, the quick connector comprises a two-end open-close quick connector, when the two-end open-close quick connector is disconnected, the valves of the child body and the female body are closed respectively to separate the cooling pipeline part of the ion source reaction chamber from the cooling circulation pipeline and avoid the coolant flowing out of the pipeline.

[0011] In one embodiment, at least two quick connectors are arranged on the cooling circulation pipeline, and the at least two quick connectors are arranged at the inlet end and the outlet end of the cooling pipeline part of the ion source reaction chamber respectively.

[0012] In one embodiment, a first quick connector and a second quick connector are arranged on the cooling circulation pipeline, the first quick connector and the second quick connector are arranged in opposite directions along the cooling circulation pipeline, and the first quick connector and the second quick connector do not need to be connected after the cooling pipeline part of the ion source reaction chamber is separated from the cooling circulation pipeline.

[0013] In one embodiment, a first quick connector and a second quick connector of the same type are arranged on the cooling circulation pipeline, the first quick connector and the second quick connector are arranged in the same direction along the cooling circulation pipeline, and the first quick connector and the second quick connector are connected to form a cooling circulation pipeline for cooling the roughing pump after the cooling pipeline part of the ion source reaction chamber is separated from the cooling circulation pipeline.

[0014] In one embodiment, the type of the quick connector matches the type of the coolant in the cooling circulation pipeline, and the quick connector comprises a water quick connector.

[0015] In one embodiment, the ion source reaction chamber comprises at least one of a boron ion source reaction chamber, a phosphorus ion source reaction chamber or an arsenic ion source reaction chamber.

[0016] In one embodiment, the roughing pump comprises a vacuum pump for keeping the source gas in the gas pipeline flowing to avoid the formation of a solid coating in the gas pipeline to block the gas pipeline.

[0017] In one embodiment, the ion implanter comprises a high-energy ion implanter, a large-beam ion implanter or a medium-beam ion implanter.

[0018] According to the ion implanter provided by the present application, by arranging a quick connector on the cooling circulation pipeline, when the cooling pipeline part of the ion source reaction chamber is separated from the cooling circulation pipeline, the cooling circulation pipeline can still be used to cool the roughing pump, so that the roughing pump can keep running, the formation of a solid coating in the gas pipeline is avoided to block the gas pipeline, and the service life of the roughing pump, the gas pipeline and other components of the ion implanter is prolonged. BRIEF DESCRIPTION OF DRAWINGS

[0019] For a better understanding of the embodiments and / or examples of the application disclosed herein, one or more of the accompanying drawings are referenced. The additional details or examples used to describe the drawings should not be considered as limiting the scope of any of the disclosed applications, presently described embodiments and / or examples, and the presently understood best mode of these applications.

[0020] Figure 1 Structure diagram of ion implanter provided in an embodiment.

[0021] Reference Signs List:

[0022] 100, ion source reaction chamber; 200, roughing pump; 300, cooling circulation line; 301, first quick connector; 302, second quick connector; 400, gas line; DETAILED DESCRIPTION

[0023] For the purpose of promoting an understanding of the application, the application will now be described in greater detail with reference to the figures. The preferred embodiments of the application are illustrated in the figures. However, the application can be embodied in many different forms and should not be construed as limited to the embodiments set forth herein. Rather, these embodiments are provided so that this disclosure will be thorough and complete. It will be apparent that the application is not limited to the embodiments described herein, but can be practiced with modification and alteration within the scope of the disclosure.

[0024] Unless otherwise defined, all technical and scientific terms used herein have the same meaning as commonly understood by one of ordinary skill in the art to which this application belongs. The terminology used in the description of the application herein is for the purpose of describing particular embodiments only and is not intended to be limiting of the application. As used herein, the term "and / or" includes any and all combinations of one or more of the associated listed items.

[0025] The terminology used herein is for the purpose of describing particular embodiments only and is not intended to be limiting of the application. As used herein, the singular forms "a", "an" and "the" are intended to include the plural forms as well, unless the context clearly indicates otherwise. It will be further understood that the terms "comprises" and / or "comprising", when used in this specification, specify the presence of stated features, integers, steps, operations, elements, and / or components, but do not preclude the presence or addition of one or more other features, integers, steps, operations, elements, components, and / or groups thereof. As used herein the term "and / or" includes any and all combinations of one or more of the associated listed items.

[0026] It is to be noted that the diagrams provided in the embodiments only schematically illustrate the basic concepts of the present application, and the diagrams only show the components related to the present application, not the components in the actual implementation, the shapes, sizes and numbers of the components in the actual implementation can be arbitrarily changed, and the layout of the components can be more complex.

[0027] Since a large amount of heat is generated in multiple processes when the ion implanter is running, the cooling circulation system of the ion implanter is used for cooling multiple components at the same time. For example, the cooling circulation pipeline of the ion implanter is used for cooling the ion source reaction chamber and the source rough pump at the same time. Therefore, when the ion source reaction chamber needs to be overhauled, maintained or replaced, the cooling circulation pipeline needs to be closed as a whole.

[0028] Further, when the cooling circulation pipeline is closed, the source rough pump needs to be shut down due to the lack of cooling. The shutdown of the source rough pump further causes the source gas in the gas pipeline to stop flowing, and the source gas forms a solid coating in the gas pipeline and thickens rapidly until the gas pipeline is blocked. When the ion implanter is restarted after the overhaul, maintenance or replacement of the ion source reaction chamber is completed, the source rough pump is prone to damage due to the blockage of the gas pipeline.

[0029] In addition, the overhaul, maintenance or replacement of the ion source reaction chamber requires the cooling pipeline part of the ion source reaction chamber to be detached from the cooling circulation pipeline. The cooling pipeline part of the ion source reaction chamber is generally connected to the cooling circulation pipeline through a flange. When the flange is detached, the cooling water in the cooling circulation pipeline flows out, causing a water leakage accident.

[0030] In view of the above problems, the utility model provides an ion implanter, as shown in the figure, comprising: Figure 1

[0031] An ion source reaction chamber 100 for generating implantation ions;

[0032] A gas pipeline 400, one end of the gas pipeline is connected to the ion source reaction chamber 100, and the other end of the gas pipeline is provided with a source rough pump 200;

[0033] A cooling circulation pipeline 300 for cooling the ion source reaction chamber 100 and the source rough pump 200, and a quick connector is arranged on the cooling circulation pipeline to detach the cooling pipeline part of the ion source reaction chamber from the cooling circulation pipeline and still use the cooling circulation pipeline 300 to cool the source rough pump 200.

[0034] ​In the semiconductor industry, ion implanters are mainly divided into high-energy (H / E) ion implanters, high-current (H / C) ion implanters, and medium-current (M / C) ion implanters. Taking a medium-current ion implanter as an example, a medium-current implanter generally implants a single wafer, and the dose is generally between 1E11 to 1E14, and the energy is between 5kev to 200kev.

[0035] The ion source reaction chamber 100 includes an ion source for outputting an ion beam. The ion source generates electrons as bombardment particles through direct current discharge or high-frequency discharge. When the energy of the external electrons is higher than the ionization potential of the atoms, the elements are ionized through collision. After collision, in addition to the original electrons, positive and secondary electrons are generated. The positive ions enter the mass analyzer to select the required ions, and then pass through the accelerator to obtain higher energy, and then enter the target chamber through the four-stage lens for ion implantation.

[0036] In one embodiment, the ion source reaction chamber can be a P-type conductive ion source reaction chamber or an N-type conductive ion source reaction chamber, such as a boron ion source reaction chamber, a phosphorus ion source reaction chamber, or an arsenic ion source reaction chamber, etc. The present application does not limit this. The ion source ionizes the source gas in which one of the components is the required doping element in the ion source reaction chamber 100 and extracts the ionized source gas in the form of an ion beam. Specifically, when the required doping element includes boron (B), phosphorus (P), arsenic (As), etc., the source gas is a gas containing boron (B), phosphorus (P), arsenic (As), etc. The source gas is active and easy to form a solid coating (Coating) on the gas-solid contact surface. The main components of the solid coating are boron (B), phosphorus (P), arsenic (As), etc., and it is easy to burn when in contact with air.

[0037] Exemplarily, the ion implanter further includes a gas pipeline 400 connected to the ion source reaction chamber 100. The source gas flows through the gas pipeline 400, and the other end of the gas pipeline 400 is provided with a roughing pump 200. The roughing pump is a vacuum pump for keeping the source gas flowing in the gas pipeline to avoid the formation of a solid coating in the gas pipeline to block the gas pipeline.

[0038] In one embodiment, referring to Figure 1As shown, when the coarse pump 200 is running, the source gas in the gas pipeline 400 remains flowing; when the coarse pump 200 stops, the source gas in the gas pipeline 400 also stops flowing. A solid coating will form on the inner surface of the gas pipeline 400. When the source gas in the gas pipeline 400 remains flowing, the time required for the solid coating to form until it blocks the gas pipeline is T1; when the source gas in the gas pipeline 400 stops flowing, the time required for the solid coating to form until it blocks the gas pipeline is T2, where T1 > T2. Therefore, to avoid the formation of a solid coating in the gas pipeline 400 and to prolong the time the gas pipeline is blocked by the solid coating, the coarse pump 200 needs to remain running.

[0039] In one embodiment, such as Figure 1 As shown, since the ion source reaction chamber 100 generates a large amount of heat when generating ions for implantation, it needs to be cooled. The cooling circulation pipe 300 of the ion implanter flows through the ion source reaction chamber 100. Similarly, since the roughing pump 200 generates a large amount of heat during operation, it also needs to be cooled. Therefore, the cooling circulation pipe 300 of the ion implanter flows through the roughing pump 200. Thus, to keep the roughing pump 200 running, the cooling circulation pipe 300 flowing through it must remain operational.

[0040] For example, the cooling circulation line 300 is equipped with a quick connector, allowing the cooling circulation line 300 to continue cooling the roughing pump 200 even after the cooling line portion of the ion source reaction chamber is detached from the cooling circulation line 300. Therefore, when the cooling line portion of the ion source reaction chamber is detached from the cooling circulation line for inspection, maintenance, or replacement, the cooling circulation line can still be used to cool the roughing pump, ensuring its continued operation. This prevents the formation of a solid coating in the gas line, which can clog it, thus avoiding forced startup of the roughing pump after gas line blockage and extending the service life of the roughing pump, gas lines, and other ion implanter components.

[0041] In one embodiment, the cooling circulation pipeline 300 is provided with a first quick connector 301 and a second quick connector 302, located at the inlet and outlet ends of the cooling pipeline section of the ion source reaction chamber, respectively. Disconnecting the first quick connector 301 and the second quick connector 302 detaches the cooling pipeline section of the ion source reaction chamber from the cooling circulation pipeline 300.

[0042] exist Figure 1In the shown embodiment, the cooling pipe section of the ion source reaction chamber is connected in parallel with the cooling pipe section of the roughing pump 200. When the cooling pipe section of the ion source reaction chamber is detached from the cooling circulation pipe 300, the remaining part of the cooling circulation pipe 300 still constitutes a circulation pipe, and the cooling circulation pipe 300 still continues to be used for cooling the roughing pump 200 without operating the first quick joint and the second quick joint. At this time, the first quick joint 301 and the second quick joint 302 can be arranged in the same direction along the cooling circulation pipe 300 or can be arranged reversely. When the first quick joint 301 and the second quick joint 302 are arranged reversely along the cooling circulation pipe 300, the first quick joint 301 and the second quick joint 302 of the cooling pipe section of the ion source reaction chamber are both female or both male after the cooling pipe section of the ion source reaction chamber is detached from the cooling circulation pipe 300. When the first quick joint 301 and the second quick joint 302 are of the same type and are connected again, the female and the male of the first quick joint 301 and the second quick joint 302 can be connected respectively or can be connected reversely.

[0043] In one embodiment, when the cooling pipe section of the ion source reaction chamber is connected in series with the cooling pipe section of the roughing pump 200, the remaining part of the cooling circulation pipe 300 does not constitute a circulation pipe after the cooling pipe section of the ion source reaction chamber is detached from the cooling circulation pipe 300, and the cooling circulation pipe 300 cannot continue to be used for cooling the roughing pump 200. At this time, the first quick joint 301 and the second quick joint 302 can be arranged in the same direction along the cooling circulation pipe 300, and the first quick joint 301 and the second quick joint 302 are of the same type. By connecting the female of the first quick joint 301 with the male of the second quick joint 302 or by connecting the male of the first quick joint 301 with the female of the second quick joint 302, a circulation pipe can be reconstituted for cooling the roughing pump 200.

[0044] In one embodiment, the quick joint includes a two-end open-close type, a two-end open type, a single-path open-close type, etc. Preferably, the quick joint of the present application adopts a two-end open-close type. When the two-end open-close type is disconnected, the valves of the female and the male are closed respectively to detach the cooling pipe section of the ion source reaction chamber from the cooling circulation pipe and avoid the coolant from flowing out of the pipe. Based on this, by arranging a quick joint on the cooling circulation pipe, when the cooling pipe section of the ion source reaction chamber is detached from the cooling circulation pipe, the coolant is prevented from flowing out of the pipe, and a water leakage accident is prevented.

[0045] In one embodiment, the quick connector comprises an insulating quick connector for avoiding high voltage discharge of the ion source reaction chamber.

[0046] In one embodiment, the quick connector comprises an air quick connector, a water quick connector, a hydraulic quick connector, a hydraulic quick connector, etc.

[0047] According to the ion implanter, when the cooling pipe of the ion source reaction chamber is detached from the cooling circulation pipeline, the cooling circulation pipeline can still be used for cooling the roughing pump, so that the roughing pump can keep running, the gas pipeline is prevented from being blocked by the solid coating formed in the gas pipeline, and the service life of the ion implanter components such as the roughing pump and the gas pipeline is prolonged.

[0048] Please note that the above embodiments are only for illustrative purposes and do not mean to limit the application.

[0049] Each embodiment in the specification is described in a progressive manner, and each embodiment focuses on the difference from other embodiments, and the same and similar parts between each embodiment can be referred to each other.

[0050] The technical features of the above-described embodiments can be combined arbitrarily, and in order to make the description concise, all possible combinations of the technical features in the above-described embodiments are not described, however, as long as the combination of the technical features does not exist contradictory, it should be considered as the scope of the specification.

[0051] The above-described embodiments only express several implementation manners of the application, and the description is more specific and detailed, but it should not be understood as the limitation of the patent application scope. It should be pointed out that for ordinary skilled in the art, without departing from the concept of the application, a number of modifications and improvements can be made, which all belong to the protection scope of the application. Therefore, the patent protection scope of the application should be subject to the appended claims.

Claims

1. An ion implanter, characterized in that, include: Ion source reaction chamber, used to generate implanted ions; A gas pipeline, one end of which is connected to the ion source reaction chamber, and a rough pump is installed at the other end of the gas pipeline; A cooling circulation pipeline is provided for cooling the ion source reaction chamber and the roughing pump. The cooling circulation pipeline is equipped with a quick connector to disconnect the cooling pipeline portion of the ion source reaction chamber from the cooling circulation pipeline while the cooling circulation pipeline is still used to cool the roughing pump.

2. The ion implanter according to claim 1, characterized in that, The quick connector includes an insulated quick connector to prevent high-voltage discharge in the ion source reaction chamber.

3. The ion implanter according to claim 1, characterized in that, The quick connector includes a two-ended quick connector. When the two-ended quick connector is disconnected, the valves of the daughter body and the mother body close respectively, so as to disconnect the cooling pipeline of the ion source reaction chamber from the cooling circulation pipeline and prevent the coolant from flowing out of the pipeline.

4. The ion implanter according to claim 1, characterized in that, The cooling circulation pipeline is provided with at least two quick connectors, which are respectively located at the inlet and outlet ends of the cooling pipeline section of the ion source reaction chamber.

5. The ion implanter according to claim 4, characterized in that, The cooling circulation pipeline is equipped with a first quick connector and a second quick connector, which are arranged in opposite directions along the cooling circulation pipeline. When the cooling pipeline part of the ion source reaction chamber is detached from the cooling circulation pipeline, the first quick connector and the second quick connector do not need to be connected.

6. The ion implanter according to claim 4, characterized in that, The cooling circulation pipeline is equipped with a first quick connector and a second quick connector of the same type. The first quick connector and the second quick connector are arranged in the same direction along the cooling circulation pipeline. When the cooling pipeline part of the ion source reaction chamber is detached from the cooling circulation pipeline, the first quick connector and the second quick connector are connected to form a cooling circulation pipeline for cooling the coarse pump.

7. The ion implanter according to claim 1, characterized in that, The type of the quick coupling is matched to the type of coolant in the cooling circulation line, and the quick coupling includes a water quick coupling.

8. The ion implanter according to claim 1, characterized in that, The ion source reaction chamber includes at least one of a boron ion source reaction chamber, a phosphorus ion source reaction chamber, or an arsenic ion source reaction chamber.

9. The ion implanter according to claim 8, characterized in that, The coarse pump includes a vacuum pump, which is used to keep the source gas in the gas pipeline flowing and prevent the formation of a solid coating in the gas pipeline that would block it.

10. The ion implanter according to claim 1, characterized in that, The ion implanter includes a high-energy ion implanter, a high-current ion implanter, or a medium-current ion implanter.

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